CN109509401A - Backlight, backlight module, display device and backlight source preparation method - Google Patents

Backlight, backlight module, display device and backlight source preparation method Download PDF

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Publication number
CN109509401A
CN109509401A CN201910043756.7A CN201910043756A CN109509401A CN 109509401 A CN109509401 A CN 109509401A CN 201910043756 A CN201910043756 A CN 201910043756A CN 109509401 A CN109509401 A CN 109509401A
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China
Prior art keywords
light
type structure
backlight
halfpace
emitting component
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Granted
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CN201910043756.7A
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Chinese (zh)
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CN109509401B (en
Inventor
孙川
汪志强
王雪绒
陈雷
马鑫
芮博超
王秋里
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Priority to CN201910043756.7A priority Critical patent/CN109509401B/en
Publication of CN109509401A publication Critical patent/CN109509401A/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)

Abstract

The embodiment of the invention provides a kind of backlight, backlight module, display device and backlight source preparation method, backlight includes: circuit board;A plurality of light-emitting elements on circuit board;Multiple halfpace type structures on light-emitting component, halfpace type structure and light-emitting component correspond, and cover corresponding light-emitting component;Transflection layer in halfpace type structure;The protective layer of transflection layer and halfpace type structure is covered, the refractive index of protective layer is greater than the refractive index of halfpace type structure.In this way, by halfpace type structure, transflection layer and protective layer the composite protection layer with micro-structure can be formed in the top of light-emitting component, protection can be played the role of to a plurality of light-emitting elements;Simultaneously; the light of low-angle can be made to be reflected back the circuit board surface by transflection layer and carry out secondary use; and the refractive index of protective layer is greater than the refractive index of halfpace type structure; the outgoing ratio and shooting angle of high angle scattered light can be increased, to play the role of reducing the light mixing distance of backlight.

Description

Backlight, backlight module, display device and backlight source preparation method
Technical field
The present invention relates to backlight display field and micro-structure manufacture field, in particular to a kind of backlight, is shown backlight module Showing device and backlight source preparation method.
Background technique
Currently, Mini LED backlight technology has many advantages, such as superelevation contrast, quick response and high colour gamut, so that Mini LED backlight is developed into project hotter currently on the market, wherein the light mixing distance of the backlight module of Mini LED (Optical Distance, OD) becomes greatly one of the problem of present urgent need to resolve.
Summary of the invention
In order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of backlight, backlight module, display device and Backlight source preparation method, the backlight module light mixing distance to solve the problems, such as existing Mini LED are big.
One aspect according to an embodiment of the present invention provides a kind of backlight, comprising:
Circuit board;
A plurality of light-emitting elements on the circuit board;
Multiple halfpace type structures on the light-emitting component, the halfpace type structure and the light-emitting component one are a pair of It answers, covers corresponding light-emitting component;
Transflection layer in the halfpace type structure;
The protective layer of the transflection layer and the halfpace type structure is covered, the refractive index of the protective layer is greater than the halfpace The refractive index of type structure.
Optionally, the material of the halfpace type structure is uv-curable glue.
Optionally, 60 ° of 1 < of angle α between the side surface and horizontal plane of the halfpace type structure.
Optionally, doped with fluorescent powder or diffusion particle in the protective layer.
Other side according to an embodiment of the present invention additionally provides a kind of backlight module, including backlight as described above Source.
Another aspect according to an embodiment of the present invention additionally provides a kind of display device, including backlight as described above Mould group.
Another aspect according to an embodiment of the present invention additionally provides a kind of production method of backlight, comprising:
One circuit board is provided, is provided with a plurality of light-emitting elements on the circuit board;
Halfpace type structure is formed in the top of light-emitting component, the halfpace type structure and the light-emitting component correspond, Cover corresponding light-emitting component;
Transflection layer is formed in the halfpace type superstructure;
Protective layer is formed in the transflection layer and the halfpace type superstructure, the refractive index of the protective layer is greater than described The refractive index of halfpace type structure.
Optionally, the top in light-emitting component forms halfpace type structure, comprising:
Circuit board and light-emitting component are placed in the type chamber of mold, the type chamber of the mold is used in the light-emitting component Form halfpace type structure;
The raw material for generating halfpace type structure is filled in the type chamber of the mold;
The raw material curing molding being filled into the type chamber of the mold.
Optionally, the raw material curing molding in the type chamber for being filled into the mold, comprising:
By ultraviolet light, the raw material curing molding that is filled into the type chamber of the mold.
Optionally, the raw material is uv-curable glue.
It is optionally, described to form protective layer in the transflection layer and the halfpace type superstructure, comprising:
Using spraying process, protective layer is formed in the transflection layer and the halfpace type superstructure.
The embodiment of the present invention has the following beneficial effects:
It, can be in the multiple light-emitting component (example by halfpace type structure, transflection layer and protective layer in the embodiment of the present invention Top such as: Mini LED) forms the composite protection layer with micro-structure, and on the one hand a plurality of light-emitting elements can be played with protection Effect, prevent light-emitting component from falling off;On the other hand, the light of low-angle can be made to be reflected back the circuit by transflection layer Plate surface carries out secondary use, meanwhile, it, can be with by the way that the refractive index of protective layer to be set greater than to the refractive index of halfpace type structure Increase the outgoing ratio and shooting angle of high angle scattered light, to play the role of reducing the light mixing distance of backlight.
Detailed description of the invention
Fig. 1 is a kind of one of the structural schematic diagram of backlight of the embodiment of the present invention;
Fig. 2 is a kind of one of the flow chart of production method of backlight of the embodiment of the present invention;
Fig. 3 is a kind of structural schematic diagram of mold of the embodiment of the present invention;
Fig. 4 is a kind of one of the process flow chart of production method of backlight of the embodiment of the present invention;
Fig. 5 is the two of the process flow chart of the production method of a kind of backlight of the embodiment of the present invention;
Fig. 6 is the three of the process flow chart of the production method of a kind of backlight of the embodiment of the present invention.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool Body embodiment is described in detail.
Term " first ", " second " in description and claims of this specification etc. are for distinguishing similar right As without being used to describe a particular order or precedence order.It should be understood that the data used in this way in the appropriate case can be with It exchanges, so that the embodiment of the present invention described herein for example can be with suitable other than those of illustrating or describing herein Sequence is implemented.
Generally, the backlight module of Mini LED is to constitute the setting of multiple Mini LED arrays on circuit boards mostly, However there are gap between the Mini LED of array, the gap between Mini LED will cause on backlight module that there are one The thickness of light mixing, i.e. light mixing distance.In order to reduce light mixing distance, between can covering in the following ways between Mini LED Gap:
1) increase air layer thickness;
2) haze diffusion or multiple diffusions are utilized;
3) production micro-structure membrane material reduces light mixing distance.
Wherein, mode 1) will lead to the increase of backlight thickness, mode 2) backlight illumination, mode 3 can be reduced) usually require film Material and LED chip exactitude position.
Comprehensively consider the pros and cons of three of the above mode, employing mode of the embodiment of the present invention 3) it covers between Mini LED Gap.
Fig. 1 is a kind of structural schematic diagram of backlight provided in an embodiment of the present invention, and referring to Fig. 1, the backlight includes: Circuit board 1, a plurality of light-emitting elements 2, multiple halfpace type structures 3, transflection layer 4 and protective layer 5;
The multiple light-emitting component 2 is located on the circuit board 1, and the multiple halfpace type structure 3 is located at the luminous member On part 2, the halfpace type structure 3 is corresponded with the light-emitting component 2, covers corresponding light-emitting component 2;The transflection layer 4 In the halfpace type structure 3;The protective layer 5 covers the transflection layer 4 and the halfpace type structure 3, the protective layer 5 Refractive index be greater than the halfpace type structure 3 refractive index.
Wherein, the light-emitting component 2 can be LED chip or Mini LED (or being Micro LED) chip etc., described Circuit board 1 can be flexible circuit board (Flexible Printed Circuit, FPC), be of course not solely limited to this.
It should be noted that the above description in relation to the light-emitting component 2 and the circuit board 1 is that example not limits It is fixed, it is to be understood that not limit the type of the light-emitting component 2 and the circuit board 1 in the embodiment of the present invention specifically.
With continued reference to Fig. 1, the multiple light-emitting component 2 is arranged at intervals on the circuit board 1, the multiple halfpace type knot Structure 3 is arranged in a one-to-one correspondence with the light-emitting component 2, it is to be understood that the halfpace type structure 3 is arranged at intervals on circuit board 1 On, and spaced halfpace type structure 3 partly overlaps, and micro-structure can be formed above the light-emitting component 2 in this way to subtract Small light mixing distance.And plating is equipped with the transflection layer 4 of default transflection ratio at the top platform of halfpace type structure 3, and such as: transflection ratio is The transflection film of T%, transflection is than for indicating the ratio of transmittance and reflectivity.By the way that the saturating of 3 top of halfpace type structure is arranged in The surface that some light that light-emitting component 2 is issued can be reflected back circuit board 1 by anti-layer 4 carries out secondary use.Further, The transflection layer 4 does not cover the side surface of the halfpace type structure 3, and the side surface of the halfpace type structure 3 and the guarantor Sheath 5 contacts, and the halfpace type structure 3 is different with the refractive index of the protective layer 5, and the light that light-emitting component 2 is issued is in ladder The side surface of bench-type structure 3 and the interface of the protective layer 5 can reflect, it is to be understood that can be by adjusting institute The angle stated between the refractive index and 3 side surface of halfpace type structure and horizontal plane of halfpace type structure 3 and the protective layer 5 comes Adjust the shooting angle of light.
With continued reference to Fig. 1, by taking the light-emitting component 2 is Mini LED chip as an example, the light emitting angle of Mini LED chip Usually 140 °, 80% or more energy concentrates within the scope of 90 °, and the light for the low-angle that the light-emitting component 2 is issued exists When by the transflection layer 4, a part is directly projected, and another part light can be reflected back the circuit by the transflection layer 4 1 surface of plate carries out secondary use.The light for a part of wide-angle that the light-emitting component 2 is issued is passing through halfpace type structure 3 Side surface and the protective layer 5 interface when, due to protective layer 5 refractive index n2 be greater than halfpace type structure 3 refractive index The shooting angle of n1, light become r2 from r1, according to the law of refraction, r1 > r2, so that beam projecting angle or range be made to increase.
It, can be in the multiple light-emitting component by halfpace type structure 3, transflection layer 4 and protective layer 5 in the embodiment of the present invention 2 (such as: top Mini LED) forms the composite protection layer with micro-structure, on the one hand can rise to a plurality of light-emitting elements 2 To the effect of protection, prevent light-emitting component 2 from falling off;On the other hand, the light of low-angle can be made to be reflected back by transflection layer 4 1 surface of circuit board carries out secondary use, meanwhile, by the way that the refractive index of protective layer 5 is set greater than halfpace type structure 3 Refractive index, can increase the outgoing ratio and shooting angle of high angle scattered light, to play the work for reducing the light mixing distance of backlight With.
Further, compared with prior art, the backlight of the embodiment of the present invention does not need to increase additional membrane material and can subtract The light mixing distance of small backlight, and can play the role of protecting light-emitting component 2 (such as: LED chip).Meanwhile the present invention is implemented The backlight of example can guarantee 2 exactitude position of halfpace type structure 3 and light-emitting component, that is, need accurately to manage the system of halfpace type structure 3 Make the aligning accuracy of process, it can be to avoid will appear halfpace type structure 3 and 2 deviation of light-emitting component in the assembling process of backlight The problem of.
Further, the angle α 1 between the side surface and horizontal plane of the halfpace type structure 3 meets the following conditions: 1 < of α 60 °, it is of course not solely limited to this.
In embodiments of the present invention, the material of the halfpace type structure 3 can be uv-curable glue, and the protective layer 5 can Think with the silica gel of default refractive index, is of course not solely limited to this.
It should be noted that the above description in relation to 5 material of the halfpace type structure 3 and the protective layer be example simultaneously It is non-limiting, it is to be understood that not limit the material of the halfpace type structure 3 and protective layer 5 in the embodiment of the present invention specifically.
It in embodiments of the present invention, can be doped with fluorescent powder or diffusion particle in the protective layer 5.Wherein, by Fluorescent powder is added in protective layer 5, protective layer 5 can be enabled to inspire white light;By adding diffusion in the protective layer 5 Particle, to further increase the diffusion effect for the light that the protective layer 5 issues light-emitting component 2.
In addition to this, the embodiment of the invention also provides a kind of backlight modules, including backlight as described above.
Further, the embodiment of the invention also provides a kind of display devices, including backlight module as described above.
Referring to fig. 2, the embodiment of the invention also provides a kind of production method of backlight, the specific steps of the production method It is as follows:
Step 201: a circuit board 1 being provided, is provided with a plurality of light-emitting elements 2 on the circuit board 1;
In embodiments of the present invention, a plurality of light-emitting elements 2 can be spaced and array is arranged on the circuit board 1.
Step 202: forming halfpace type structure 3, the halfpace type structure 3 and the luminous member in the top of light-emitting component 2 Part 2 corresponds, and covers corresponding light-emitting component 2;
In embodiments of the present invention, the halfpace type structure 3 is arranged at intervals on the circuit board 1, two adjacent ladders Bench-type structure 3 partly overlaps.
Further, the angle α 1 between the side surface and horizontal plane of the halfpace type structure 3 meets the following conditions: 1 < of α 60 °, it is of course not solely limited to this.
Referring to Fig. 3 to Fig. 4, step 202 is specifically included:
A mold is provided, the type chamber of the mold is used to form halfpace type structure 3 on the light-emitting component 2;By circuit Plate 1 and light-emitting component 2 are placed in the type chamber of mold;The original for generating halfpace type structure 3 is filled in the type chamber of the mold Material;The raw material curing molding being filled into the type chamber of the mold.
With continued reference to Fig. 3, for the ease of the molding and demoulding of the halfpace type structure 3, the embodiment of the present invention is used Mold can be divided into upper mold 100 and lower die 200, collectively formed by upper mold 100 and lower die 200 and be used to form halfpace type structure 3 type chamber separates upper mold 100 and lower die 200 after raw material curing molding, can be by the structure of curing molding from the type It is taken out in chamber.
It should be noted that the structure of the mold is not limited in situation shown in Fig. 3, it is to be understood that this hair The structure type of the mold is not limited in bright embodiment specifically.
It is filled into the type chamber of the mold with continued reference to Fig. 4 it is possible to further be irradiated by ultraviolet light 300 Raw material curing molding.Optionally, the raw material can be uv-curable glue.
It should be noted that being above that example not limits in relation to raw material material and by the technique of raw material curing molding It is fixed.
Step 203: transflection layer 4 is formed above the halfpace type structure 3;
Referring to Fig. 1, Fig. 5 and Fig. 6, the transflection layer 4 is located on the platform at 3 top of halfpace type structure, it is possible to understand that , the transflection layer 4 do not cover the side surface of halfpace type structure 3, the side surface of the halfpace type structure 3 and the protection Layer 5 contacts.
Step 204: protective layer 5, the folding of the protective layer 5 are formed above the transflection layer 4 and the halfpace type structure 3 Penetrate the refractive index that rate is greater than the halfpace type structure 3.
In embodiments of the present invention, the protective layer 5 can be the silica gel with default refractive index, be of course not solely limited to This.
With continued reference to Fig. 6, the step 204 be can specifically include:
Using spraying process, protective layer 5 is formed above the transflection layer 4 and the halfpace type structure 3.
Such as: referring to Fig. 6, the spraying equipment 400 for accommodating matcoveredn raw material can be moved back and forth, and be set by injection Protective layer raw material is sprayed on the surface of the halfpace type structure 3 and the transflection layer 4 by standby 400 nozzle 401, and then described The protective layer 5 of preset thickness is formed above transflection layer 4 and the halfpace type structure 3.
In order to enable protective layer 5 can inspire white light, on the basis of the above embodiments, the method also includes following Step:
When forming protective layer 5 above the transflection layer 4 and the halfpace type structure 3, it is added in the protective layer 5 Fluorescent powder.
In order to improve the diffusion effect for the light that the protective layer 5 issues light-emitting component 2, in the base of above-described embodiment On plinth, the method also includes following steps:
When forming protective layer 5 above the transflection layer 4 and the halfpace type structure 3, it is added in the protective layer 5 Diffusion particle.
The production method of the backlight of the embodiment of the present invention, can be by halfpace type structure 3, transflection layer 4 and protective layer 5 The multiple light-emitting component 2 (such as: top Mini LED) forms the composite protection layer 5 with micro-structure, on the one hand can be with Play the role of protection to a plurality of light-emitting elements 2, prevents light-emitting component 2 from falling off;On the other hand, can be made by transflection layer 4 The light of low-angle is reflected back 1 surface of circuit board and carries out secondary use, meanwhile, by the way that the refractive index of protective layer 5 is arranged For the refractive index greater than halfpace type structure 3, the outgoing ratio and shooting angle of high angle scattered light can be increased, to play reduction The effect of the light mixing distance of backlight.
Further, compared with prior art, the production method of the backlight of the embodiment of the present invention does not need to increase additionally Membrane material can reduce the light mixing distance of backlight, and can play the role of protecting light-emitting component 2 (such as: LED chip).Meanwhile The production method of the backlight of the embodiment of the present invention can guarantee 2 exactitude position of halfpace type structure 3 and light-emitting component, that is, need essence The really aligning accuracy of control 3 manufacturing process of halfpace type structure, can be to avoid will appear halfpace type in the assembling process of backlight The problem of structure 3 and 2 deviation of light-emitting component.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications It should be regarded as protection scope of the present invention.

Claims (11)

1. a kind of backlight characterized by comprising
Circuit board;
A plurality of light-emitting elements on the circuit board;
Multiple halfpace type structures on the light-emitting component, the halfpace type structure and the light-emitting component correspond, Cover corresponding light-emitting component;
Transflection layer in the halfpace type structure;
The protective layer of the transflection layer and the halfpace type structure is covered, the refractive index of the protective layer is greater than the halfpace type knot The refractive index of structure.
2. backlight according to claim 1, which is characterized in that the material of the halfpace type structure is uv-curable glue.
3. backlight according to claim 1, which is characterized in that between the side surface and horizontal plane of the halfpace type structure 60 ° of 1 < of angle α.
4. backlight according to claim 1, which is characterized in that doped with fluorescent powder or diffusion grain in the protective layer Son.
5. a kind of backlight module, which is characterized in that including the described in any item backlights of such as Claims 1-4.
6. a kind of display device, which is characterized in that including backlight module as claimed in claim 5.
7. a kind of production method of backlight characterized by comprising
One circuit board is provided, is provided with a plurality of light-emitting elements on the circuit board;
Halfpace type structure is formed in the top of light-emitting component, the halfpace type structure and the light-emitting component correspond, covering Corresponding light-emitting component;
Transflection layer is formed in the halfpace type superstructure;
Protective layer is formed in the transflection layer and the halfpace type superstructure, the refractive index of the protective layer is greater than the halfpace The refractive index of type structure.
8. the production method of backlight according to claim 7, which is characterized in that the top in light-emitting component is formed Halfpace type structure, comprising:
Circuit board and light-emitting component are placed in the type chamber of mold, the type chamber of the mold on the light-emitting component for forming Halfpace type structure;
The raw material for generating halfpace type structure is filled in the type chamber of the mold;
The raw material curing molding being filled into the type chamber of the mold.
9. the production method of backlight according to claim 8, which is characterized in that the type for being filled into the mold Raw material curing molding in chamber, comprising:
By ultraviolet light, the raw material curing molding that is filled into the type chamber of the mold.
10. the production method of backlight according to claim 9, which is characterized in that the raw material is uv-curable glue.
11. the production method of backlight according to claim 7, which is characterized in that described in the transflection layer and described Halfpace type superstructure forms protective layer, comprising:
Using spraying process, protective layer is formed in the transflection layer and the halfpace type superstructure.
CN201910043756.7A 2019-01-17 2019-01-17 Backlight source, backlight module, display device and backlight source manufacturing method Active CN109509401B (en)

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Cited By (3)

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CN112015006A (en) * 2020-09-14 2020-12-01 武汉华星光电技术有限公司 Bendable backlight module and display panel
CN114442370A (en) * 2021-12-31 2022-05-06 厦门天马微电子有限公司 Backlight module and display device
WO2023159690A1 (en) * 2022-02-28 2023-08-31 广州华星光电半导体显示技术有限公司 Display backplane and mobile terminal

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CN112015006A (en) * 2020-09-14 2020-12-01 武汉华星光电技术有限公司 Bendable backlight module and display panel
CN114442370A (en) * 2021-12-31 2022-05-06 厦门天马微电子有限公司 Backlight module and display device
WO2023159690A1 (en) * 2022-02-28 2023-08-31 广州华星光电半导体显示技术有限公司 Display backplane and mobile terminal

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