CN109478590A - Memory cell with magnetic Josephson's junction device with doped magnetic layer - Google Patents
Memory cell with magnetic Josephson's junction device with doped magnetic layer Download PDFInfo
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
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- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
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- H10N60/00—Superconducting devices
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- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
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- H10N60/00—Superconducting devices
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H10N50/10—Magnetoresistive devices
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- H10N50/00—Galvanomagnetic devices
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Abstract
Provide the memory cell including magnetic Josephson junction (MJJ) device.MJJ device (300) includes: free magnetic layer (310), nonmagnetic layer (320) and fixed magnetic layer (312).Free magnetic layer includes magnetic alloy, such as doped with the ferronickel of at least one of vanadium, zirconium, molybdenum or hafnium.Fixed magnetic layer includes the second magnetic alloy, and second magnetic alloy is undoped or has doping more lower than free magnetic layer.
Description
Background technique
The integrated circuit based on semiconductor used in electronic device (such as random access memory) includes being based on
The digital circuit of complementary metal oxide semiconductor (CMOS) technology.However, CMOS technology reaches its pole in terms of size of devices
Limit.In addition, leakage current in the memory based on CMOS leads to high power consumption even when these memories are not accessed.
As an example, the server in data center increasingly consumes a large amount of electric power.Power consumption is partly due to
Power loss caused by dissipation of energy, even if being also such when cmos circuit is inactive.This is because even
When such circuit (such as random access memory) is inactive and does not consume any dynamic power, still
Electric power is consumed due to maintaining the needs of the state of CMOS transistor.In addition, because cmos circuit is come using direct current (DC) voltage
Power supply, so even if there is also a certain amount of current leakages when cmos circuit is inactive.Therefore, even if working as this
When the untreated operation (such as read/write) of the circuit of sample, a certain amount of electric power is wasted, and is not only as maintaining
The requirement of the state of CMOS transistor as a result, but also being result due to current leakage.
The alternative approach of memory based on CMOS technology is the memory of based superconductive logic.
Summary of the invention
In one example, this disclosure relates to include the memory cell of magnetic Josephson junction (MJJ) device.MJJ device
Part can include at least: first layer, be formed on above the second layer；And third layer, it is formed below the second layer, wherein
First layer is free magnetic layer, and the second layer is nonmagnetic layer, and wherein third layer is fixed magnetic layer.Free magnetic layer may include
Doped with the magnetic alloy of at least one of vanadium, zirconium, molybdenum or hafnium, and fixed magnetic layer may include undoped second magnetic
Property alloy.
In another aspect, this disclosure relates to include the memory cell of magnetic Josephson junction (MJJ) device.MJJ device
Part may include: first layer, be formed on above the second layer；And third layer, it is formed below the second layer.First layer can
To be free magnetic layer；The second layer can be nonmagnetic layer；And third layer can be fixed magnetic layer.Free magnetic layer can be with
Including only doped with the dilval of vanadium, wherein the concentration of vanadium can be in 5 atomic percents to the model between 20 atomic percents
In enclosing.Fixed magnetic layer may include the only dilval doped with vanadium, and wherein the concentration of vanadium can be in 5 atomic percents to 10
Between atomic percent.
In another aspect, this disclosure relates to include the memory cell of magnetic Josephson junction (MJJ) device.MJJ device
Part can include at least: (1) first layer and the second layer, be formed on above third layer；(2) the 4th layers and layer 5,
It is formed below third layer.Each of first layer and the second layer can be free magnetic layer；Third layer can be non-magnetic
Property layer；And each of the 4th layer and layer 5 can be fixed magnetic layer.Each free magnetism in free magnetic layer
Layer may include the magnetic alloy doped at least one of vanadium, zirconium, molybdenum or hafnium.Each fixed magnetic in fixed magnetic layer
Layer may include undoped second magnetic alloy.
The content of present invention is provided to introduce the selection of concept in simplified form, these concepts in the following detailed description into
One step is described.Purport does not identify the key feature or essential characteristic of subject content claimed to the content of present invention, also not
It is intended to be used to limit the range of subject content claimed.
Detailed description of the invention
Present disclosure is illustrated by example and is not limited by attached drawing, wherein the instruction of identical appended drawing reference is similar
Element.For simplicity and clarity, the element in attached drawing is illustrated and is not drawn necessarily to scale.
Fig. 1 shows the schematic diagram according to an exemplary storage system；
Fig. 2 shows the schematic diagrames according to exemplary memory cell；
Fig. 3 is shown according to exemplary magnetic Josephson junction (MJJ) device；
Fig. 4 is shown according to an exemplary MJJ device；
Fig. 5 is shown according to an exemplary hysteresis curve for MJJ device；And
Fig. 6 is shown according to an exemplary computing system including being coupled to the memory of processor.
Specific embodiment
Example described in the disclosure is related to the storage component part of based superconductive logic, including Josephson's magnetic random
It accesses memory (JMRAM).Certain examples further relate to reciprocity quantum logic (RQL) compatible JMRAM.It is different from CMOS transistor,
RQL circuit is the superconductor circuit using the device based on Josephson junction.Exemplary Josephson junction may include via resistance
Two superconductors for hindering the region of electric current and being coupled.The physics for hindering the region of electric current to can be superconductor itself narrows, is golden
Belong to region or thin insulating potential barrier.As an example, superconductor-insulator-superconductor (SIS) type Josephson junction can be by
It is embodied as a part of RQL circuit.As an example, superconductor is can to carry DC current (DC) in the case where lacking electric field
Material.Superconductor (such as niobium) has critical-temperature (Tc), and superconductor has zero resistance when being lower than the critical-temperature.Niobium
(such superconductor) has the critical-temperature (Tc) of 9.3 Kelvin degrees.Lower than Tc at a temperature of, niobium is superconduction；
However, higher than Tc at a temperature of, niobium shows as the normal metal with resistance.Therefore, in the Josephson junction of SIS type
In, superconductor can be niobium superconductor and insulator can be Al2O3Potential barrier.In the knot of SIS type, pass through quantum mechanics
Wave function describes superelectron.The phase difference of the phase of superelectron wave function between two superconductors changed over time
Corresponding to the potential difference between two superconductors.In RQL circuit, in one example, the knot of SIS type can be superconduction and return
The a part on road.When the potential difference between two superconductors is integrated in a circulation of phase change relative to the time,
Pass through the integral multiple of the change of flux list quantum magnetic flux in circuit.Voltage pulse associated with single quantum magnetic flux is referred to as
Single flux quantum (SFQ) pulse.As an example, overdamp Josephson junction can create individual single flux quantum (SFQ) pulse.
In RQL circuit, each Josephson junction can be a part of one or more superconducting circuits.Phase difference across knot can lead to
It crosses and is applied to the magnetic flux in circuit to modulate.
Various RQL circuits including transmission line can be by multiple about by inductor or other component coupling as needed
Se Fusen ties to be formed.SFQ pulse can advance under the control of at least one clock via these transmission lines.SFQ pulse can
To be positive or negative.As an example, when sinusoidal bias current is supplied to knot, then both positive pulse and negative pulse can be with
It advances to the right during opposite clock phase on the transmission line.Due to lacking bias resistor, thus RQL circuit can be advantageously
With zero quiescent dissipation.In addition, exchange (AC) electricity can be used to power, to eliminate ground return current in RQL circuit.AC electricity
Source can function as the stable clock reference signal for RQL circuit.In one example, a pair can be used in numerical data
Positive and negative (reciprocal) SFQ pulse encodes.As an example, logic 1 can be encoded as the positive and negative phase in sinusoidal clock
Position in be generated SFQ pulse it is reciprocal right.Logical zero position can be by lacking positive/negative pulse pair during dock cycles
In the case of be encoded.Positive SFQ pulse can reach during the positive part of clock, and negative pulse can be in the negative part phase of clock
Between reach.
The structure block of exemplary RQL circuit may include various types of logic gates.Example logic door includes AND (with)
Door, OR (or) door, logic A and non-B (AanB) door and Luo JiAND &OR (AndOr) (with or) door.AanB can have two
Input and an output (Q).Unless input pulse B occurs first, otherwise input pulse A can travel to output Q.AndOr
It can have two inputs and two outputs (Q1 and Q2).First input pulse (input pulse A or input pulse B) goes to defeated
Q1 and the second input pulse go to output Q2 out.These logic behavior can be compiled based on reciprocal data noted earlier
Code.As an example, positive pulse changes the inside flux state of inductive loop, but subsequent negative pulse is wiped in each dock cycles
Except internal state, and then generate combinational logic behavior.
In general, microwave signal (for example, SFQ pulse) can be used to the state of control memory cell.Read/
During write operation, wordline and bit line can be selectively activated by the SFQ pulse reached via address bus.These arteries and veins
Punching can control in turn can provide the wordline and bit-line drive program of wordline and bit line current to associated memory unit.Example
Memory cell may include at least one magnetic Josephson junction (MJJ) device.In one example, MJJ device can wrap
Include at least one fixed magnetic layer and at least one free magnetic layer.In a state, magnetic associated with free magnetic layer
Polarity can be substantially parallel to magnetic polarity associated with fixed magnetic layer.The state of MJJ device can be referred to as parallel
State.In another state, magnetic polarity associated with free magnetic layer can be substantially normal to and fixed magnetic layer phase
Associated magnetic polarity.The state of MJJ device can be referred to as antiparallel state.It, can be with by manipulating the magnetic polarity of MJJ device
Realize memory cell.Example memory unit may include the first MJJ device with the 2nd MJJ means parallel.It can be to this
Two combinations are configured, so that in the case where applying the current offset and magnetic flux of appropriate amount, memory cell can be with
In logical one state or it is in logical zero state.In one example, if memory cell is in logical one shape
State, then in the case where applying electric current via wordline, MJJ can be changed into " voltage status ".It is coupled to memory cell
Voltage sensing can be to represent logical one state by sensing amplifier.Logical zero state can correspond to " substantially no-voltage
State ", so that, regardless of applying electric current via wordline, MJJ can rest on " substantially no-voltage shape in logical zero state
In state ".This sensing can be represented logical zero state by sensing amplifier.
Memory cell can be arranged with row and column, allow each row by common flux bias (for example, reading wordline
Signal) activation and each bit line can form transmission line, which can be by the defeated of the memory cell in voltage status
The sensing amplifier at one end of column is traveled to out.Memory cell in column can be biased by common current subject string row；For example,
Flux pump.
Fig. 1 shows the schematic diagram according to an exemplary storage system 100.Storage system 100 may include with
The memory cell array 102 of row and column arrangement.In one example, array 102 can be memory cell (for example, about plucked instrument
The gloomy magnetic random access of husband (JMRAM) memory cell) array.Storage system 100 can also include row decoder 110,
It can be configured as decoded row control/address signal.Row decoder 110 may also coupled to wordline driver 112.Wordline
Driver 112 may include the circuit of the subset or whole offer wordline read/write electric currents to memory cell, and wordline is read
Take/write current with for the selected wordline of any read or write operation it is associated.Wordline driver 112 can be through
Such electric current is provided by wordline 114.Wordline 114 may include reading both wordline and write-in wordline.In other words, different word
Line can be used to provide electric current to selected memory cell, to be used for read or write operation.Storage system 100 is also
It may include column decoder 120, can be configured as decoding column control/address signal.Column decoder 120 can also be coupled
To bit-line drive program 122.Bit-line drive program 122 may include the subset or all offer bit line readings to memory cell
The circuit of electric current, it is associated with for the selected bit line of any read or write operation that bit line reads electric current.Bit-line drive
Program 122 can provide such electric current via bit line 124.Bit line 124 may include both reading bit line and write-in bit line.It changes
Yan Zhi, different bit lines can be used to provide electric current to selected memory cell, to be used for read or write operation.It is logical
It crosses using row address and column address, address can be used to access in any of memory cell.Bit line is (for example, bit line
124) each bit line in may also coupled to the sensing amplifier 130 for sense bit line, to determine memory cell battle array
The logic state of each of column 102.Coupling between memory cell array 102 and sensing amplifier 130 may include
Radio frequency (RF) transmission line.Memory cell in each column can serially carry out electricity by common current source (for example, flux pump)
Stream biasing.As previously described, bit line 124 can be used to each of the memory cell by the current coupling into column
Memory cell.As relative to described in Fig. 2, sensing amplifier 130 can measure bit line current or bit-line voltage comes really
Determine the state of memory cell.Although Fig. 1 shows the certain number of portion for the storage system 100 arranged in some way
Part, but there may be the components for the more or less numbers being arranged differently.
Fig. 2 shows the schematic diagrames according to exemplary memory cell 200.In one example, memory cell
200 may include first magnetic Josephson junction (MJJ) device 220 and second magnetic Josephson junction (MJJ) device 222.It deposits
Storage unit 200 can also include two inductors 216 and 218.In one example, MJJ 220 and MJJ 222 can be formed
It reads superconducting quantum interference device (SQUID).
With continued reference to Fig. 2, memory cell 200 can be coupled to wordline and position for executing various storage operations
Line, various storage operations include such as read operation and write operation.As an example, the reading word for executing read operation
Line (RWL) can be coupled to memory cell 200.Write-in wordline (WWL) for executing write operation can be coupled to
Memory cell 200.In addition, the reading bit line (RBL) for executing read operation can be coupled to memory cell 200.
Write-in bit line (WBL) for executing write operation also can be coupled to memory cell 200.Each wordline in wordline can
To be one of the wordline 114 of Fig. 1.Similarly, each bit line in bit line can be one of bit line 124 of Fig. 1.Inductor 216
It can be coupled to reading bit line (RBL) with 218, as shown in FIG. 2.Memory cell 200 can also include for coupling
The inductor 236 and 238 of wordline (RWL) is read, as shown in FIG. 2.Write-in bit line (WBL) can be utilized to form coupling
Device 240 can change the magnetic polarity of the free magnetic layer of MJJ device 220.Additionally, as shown in FIG. 2, wordline is written
(WWL) it can be utilized to form coupler 250, the magnetic polarity of the free magnetic layer of MJJ device 220 can be changed.It is writing
During entering operation, electric current can be coupled to MJJ device 220 via WBL and WWL.Pass through WBL and WWL depending on electric current flowing
Direction, combined write current can be generated magnetic field, sets logical one for the binary value of MJJ device 220 or patrol
It collects " 0 ".The binary value being stored in memory cell 200 can be read by supplying read current on RBL and RWL.
MJJ 224 can serve as reference.
Write-in bit line can be magnetically coupled to MJJ 220.In one example, coupling with MJJ 220 can make
The magnetic field that at least one of magnetic barrier layer by MJJ 220 and MJJ 222 generates can read wordline by applying part
Electric current and changed by applying local bitline electric current.In one example, each MJJ in MJJ 220 may be at
One state (for example, magnetized first configuration for corresponding at least one free magnetic layer) and the second state are (for example, correspond to extremely
Magnetized second configuration of a few free magnetic layer), wherein magnetized first configuration can substantially match with magnetized second
Set difference.In one example, MJJ 220 can be in the magnetic field generated by fixed magnetic layer and the magnetic generated by free magnetic layer
A state is in when field is relative to each other.In one example, which can be " nought state " of MJJ 220.MJJ 220 can
With the magnetic field generated by free magnetic layer and by fixed magnetic layer generate magnetic field support one another when in different states.?
In one example, which can be " π state ".In " the π state ", MJJ 220 can apply flux, so that via electricity
In the case that sensor 236 and 238 applies word reading electric current, due to by MJJ 220 and by the way that word is read current coupling
To inductor 216 and 218, the induced current of flux that is generated can read set of currents with the position applied at node A
It closes, memory cell is triggered in voltage status.The voltage can generate electric current along reading bit line, can serve as tool
There is the transmission line of a constant impedance.Sensing amplifier can be used to sense in the electric current.
With continued reference to Fig. 2, during read operation, reads wordline (RWL) and reading bit line (RBL) can be from respective drive
Program receives electric current (for example, wordline driver 112 and bit-line drive program 122 of Fig. 1).In one example, word is read
Line (RWL) can be coupled to inductor 236 and inductor 238.Although Fig. 2 shows inductors 236 and 238 to be used as discrete portion
Part, but it may not be discrete parts, because inductance can be from the arrangement for the material layer for being used to manufacture memory cell 200
Export.In one example, reading bit line (RBL) can be coupled directly to memory cell 200 and provide this ground bit lines
Electric current.In a state (for example, π state), MJJ 220 can provide flux bias to the reading SQUID formed by MJJ.
During read operation, the flux bias from MJJ 220 can be added to raw by flowing through the local electric current for reading wordline
At flux, thus make read SQUID be transformed into voltage status.In the second state (for example, nought state), MJJ 220 can be with
Any flux bias is not provided to reading SQUID.It is generated as the result for flowing through the local electric current for reading wordline
Flux may be not enough to read SQUID driving into voltage status.The output voltage of memory cell 200, electric current are appointed
Sensing amplifier (for example, sensing amplifier 130 of Fig. 1) can be used to sense in change in what other parameters.Show at one
In example, after being amplified by sensing amplifier, the presence of current impulse or missing can determine the state of memory cell 200
As logical zero or logical one.As an example, logical one state can correspond to " voltage status ", wherein being coupled to
Voltage sensing can be to represent logical one state by the sensing amplifier of memory cell.Logical zero state can correspond to
" substantially zero-voltage state " senses sensing amplifier by this to represent logical zero state.In this example, it deposits
The voltage of storage unit 200 depends on applying electric current via reading wordline (RWL).Node A and B shown in Fig. 2 can be regarded
For the terminal of radio-frequency transmission line.The impedance of memory cell 200 to node B and can pass through based on inductance (L), from node A
Memory cell 200 uses equation relative to the capacitor (C) of ground connection:To determine.Although Fig. 2 shows with certain side
The certain number of component of the memory cell 200 of formula arrangement, but there may be the more or less numbers being arranged differently
Component.
Fig. 3 is shown according to exemplary magnetic Josephson junction (MJJ) device 300.In one example, Fig. 2
MJJ device 220 and MJJ device 224 can be configured as MJJ device 300.In this example, MJJ device 300 may include leading
Electric layer 302 and another conductive layer 304, as shown in FIG. 3.In this example, conductive layer 302 and conductive layer 304 can be used
Niobium is formed.In this example, the thickness of each conductive layer in these conductive layers can be 100 angstroms to 500 angstroms.MJJ device
300 can also include nonmagnetic layer 320, can be sandwiched between free magnetic layer 310 and fixed magnetic layer 312.Therefore, exist
In the example, free magnetic layer 310 can be formed on 320 top of nonmagnetic layer and fixed magnetic layer 312 can be formed
Below nonmagnetic layer 320.May exist middle layer between any layer in these layers.Term above and below is used only for
Indicate free magnetic layer 310 nonmagnetic layer 320 side and fixed magnetic layer 312 be formed on the another of nonmagnetic layer 320
Side.These terms do not imply that the certain order for creating these layers.In other words, it in the context of the disclosure, can anticipate above
Taste it is following and may mean that below above.
In one example, free magnetic layer 310 can have very soft magnetic properties to allow in response to small magnetic field
To switch the direction of magnetization.As an example, free magnetic layer 310 can have the saturation lower than 350emu/cc under liquid helium temperature
Magnetization, the coercivity value less than 10 oersteds and the anisotropy field value less than 20 oersteds.Free magnetic layer 310 may include
Doped with the first magnetic alloy of at least one of vanadium, zirconium, molybdenum or hafnium.As an example, free magnetic layer 310 may include mixing
Heterozygosis gold V20(Ni75Fe25)80.Therefore, free magnetic layer 310 may include ferronickel (Ni-Fe) alloy doped with vanadium (V).Vanadium
It can have the concentration of 20 atomic percents and Ni-Fe alloy can have the concentration of 80 atomic percents.In Ni-Fe alloy
Interior, Ni can have the concentration of 75 atomic percents and Fe can have the concentration of 25 atomic percents.In one example,
Vanadium can have the concentration between 1-40 atomic percent and Ni-Fe alloy can have 60-99 atomic percent
Concentration than between.In Ni-Fe alloy, the concentration of Ni can 75 atomic percents to 95 atomic percents it
Between change and the concentration of Fe can change in 5 atomic percents between 25 atomic percents.In one example, free magnetic
Property layer 310 can be 15 angstroms in terms of thickness.In this example, undoped magnetic alloy can be used in fixed magnetic layer 312
To be formed.In another example, fixed magnetic layer 312 can have than the lower doping of free magnetic layer 310.Show at one
In example, fixed magnetic layer 312 can have the hysteresis bigger than the hysteresis for free magnetic layer 310.Fixed magnetic
Property layer 312 can also have bigger coercivity value (HC) compared with free magnetic layer 310.Fixed magnetic layer 312 can be with
With big squareness ratio (remanent magnetization (MR)/saturated magnetization (MS) ratio).The thickness of fixed magnetic layer 312 may be chosen such that
Obtaining MJJ device can convert between " nought state " and " π state ".As an example, fixed magnetic layer 312 may include that doping is closed
Golden V10(Ni80Fe20)90.Therefore, fixed magnetic layer 312 may include the Ni-Fe alloy doped with vanadium.Vanadium can have 10 atoms
The concentration and Ni-Fe alloy of percentage can have the concentration of 90 atomic percents.In Ni-Fe alloy, Ni be can have
The concentration and Fe of 80 atomic percents can have the concentration of 20 atomic percents.In one example, fixed magnetic layer 312
It can be 25 angstroms in terms of thickness.In general, magnetosphere can have 10 angstroms to 25 angstroms of thickness.Magnetic alloy can be
Ni-Co alloy, Fe-Co alloy/C or Co-Ni-Fe alloy.In another example, magnetosphere may include doped with zirconium (Zr)
Ni-Fe alloy (such as Zrz(Ni80Fe20)1-z), wherein the concentration of zirconium can be in 2 atomic percents between 20 atomic percents
In the range of change.In other examples, magnetosphere may include the Ni-Fe alloy doped with molybdenum or hafnium.Nonmagnetic layer 320 can
To include at least one of the following: vanadium (V), molybdenum (Mo), copper (Cu), aluminium (A1), tantalum (Ta) or chromium (Cr).Relative to figure
Physical vapour deposition (PVD) (PVD) technology (such as sputtering) can be used to be formed in any of layer described in 3.Although Fig. 3 shows
Go out the certain number of layer for the MJJ device 300 arranged in some way, but there may be arranged differently more or more
Few layer.
Fig. 4 is shown according to an exemplary MJJ device 400.In one example, the MJJ device 220 and MJJ device of Fig. 2
Part 224 can be configured as MJJ device 400.In this example, MJJ device 400 may include conductive layer 402 and another conduction
Layer 404, as shown in FIG. 4.In this example, niobium can be used to be formed in conductive layer 402 and conductive layer 404.In the example
In, the thickness of each conductive layer in these conductive layers can be 100 angstroms to 500 angstroms.MJJ device 400 may include two from
By magnetosphere 410 and 412, as shown in FIG. 4.MJJ device 400 can also include two fixed magnetic layers 414 and 416.MJJ
Device 400 can also include nonmagnetic layer 420, can be sandwiched between free magnetic layer 412 and fixed magnetic layer 414.Cause
This, in this example, free magnetic layer 410 and 412 can be formed on 420 top of nonmagnetic layer and fixed magnetic layer 414
420 lower section of nonmagnetic layer can be formed on 416.May exist middle layer between any layer in these layers.Term with
The upper and following side and 414 He of fixed magnetic layer for being used only for instruction free magnetic layer 410 and 412 in nonmagnetic layer 420
416 are formed on the other side of nonmagnetic layer 420.These terms do not imply that the certain order for creating these layers.In other words, at this
In disclosed context, it may mean that following and may mean that below above above.
In one example, free magnetic layer 410 and 412 can have very soft magnetic properties to allow in response to small
Magnetic field switches the direction of magnetization.As an example, free magnetic layer 410 and 412, which can have, to be lower than under liquid helium temperature
The saturated magnetization of 350emu/cc, the coercivity value less than 10 oersteds and the anisotropy field value less than 20 oersteds.Free magnetic
Property layer 410 and 412 may include doped alloys V20(Ni75Fe25)80.Therefore, free magnetic layer 410 and 412 may include doping
There is ferronickel (Ni-Fe) alloy of vanadium (V).Vanadium can have the concentration of 20 atomic percents and Ni-Fe alloy can have 80
The concentration of atomic percent.In Ni-Fe alloy, Ni can have the concentration of 75 atomic percents and Fe can have 25 originals
The concentration of sub- percentage.In one example, vanadium can have the concentration of 1-40 atomic percent and Ni-Fe alloy can have
There is the concentration of 60-99 atomic percent.In Ni-Fe alloy, Ni can have 75 atomic percents to 95 atomic percents it
Between concentration and Fe can have 5 atomic percents to the concentration between 25 atomic percents.In one example, free magnetic
Each of property layer 410 and 412 can be 15 angstroms in terms of thickness.In this example, fixed magnetic layer 414 and 416 can be with
It is formed using undoped magnetic alloy.In another example, fixed magnetic layer 414 and 416, which can have, compares free magnetism
410 and 412 lower doping of layer.In one example, each fixed magnetic layer 414 and 416 can have than for freely
The bigger hysteresis of the hysteresis of magnetosphere 410 and 412.Fixed magnetic layer 414 and 416 can also have and free magnetism
The coercivity value (HC) that layer 410 compares bigger with 412.Fixed magnetic layer 414 and 416 can also have big squareness ratio (surplus
Residual magnetism (MR)/saturated magnetization (MS) ratio).The thickness of fixed magnetic layer 414 and 416 can be selected so that MJJ device energy
It is converted between enough " nought state " and " π state ".As an example, fixed magnetic layer 414 and 416 may include doped alloys V10
(Ni80Fe20)90.Therefore, fixed magnetic layer 414 and 416 may include the Ni-Fe alloy doped with vanadium.Vanadium can have 10 originals
The concentration and Ni-Fe alloy of sub- percentage can have the concentration of 90 atomic percents.In Ni-Fe alloy, Ni can have
There is the concentration of 80 atomic percents and Fe can have the concentration of 20 atomic percents.In one example, fixed magnetic layer
In each fixed magnetic layer can be 25 angstroms in terms of thickness.In general, magnetosphere can have 10 angstroms to 25 angstroms of thickness
Degree.Magnetic alloy can be Ni-Co alloy, Fe-Co alloy/C or Co-Ni-Fe alloy.In another example, magnetosphere can be with
Including the Ni-Fe alloy (Zr doped with zirconium (Zr)z(Ni80Fe20)1-z), wherein zirconium can have 2 atomic percents to 20 atoms
Concentration between percentage.In other examples, magnetosphere may include the Ni-Fe alloy doped with molybdenum or hafnium.Nonmagnetic layer
420 may include at least one of the following: vanadium (V), molybdenum (Mo), copper (Cu), aluminium (A1), tantalum (Ta) or chromium (Cr).Phase
Physical vapour deposition (PVD) (PVD) technology (such as sputtering) can be used for any of layer described in Fig. 4 to be formed.Although
Fig. 4 shows the certain number of layer for the MJJ device 400 arranged in some way, but there may be arranged differently more
More or less layer.
Fig. 5 shows the MJJ according to an exemplary vanadium for the various concentration in free magnetic layer, nickel and iron
The hysteresis curve of device (for example, MJJ device 300 and 400).Each hysteresis curve in hysteresis curve is shown in response to liquid helium
At a temperature of the magnetic field (H) applied free magnetic layer magnetization (M) in change.Such as curve 510,520,530,540,
Shown in each curve in 550 and 560, the concentration of dopant and dilval is selected, so that being used for the free magnetism of MJJ device
The range of the saturated magnetization (MS) of layer is between 50emu/cc to 400emu/cc.Alternatively, in other words, it is used for MJJ
The saturated magnetization of the free magnetic layer of device is between 50kA/m to 400kA/m.In addition, each song in curve
In line, coercivity (HC) value is less than 10 oersteds.Curve 510,520 and 530 shows to have to be arranged in dilval
Change in the magnetization of the concentration of the vanadium of 10 atomic percents.Curve 510 is shown including V10(Ni80Fe20)90Free magnetism
Change in the magnetization of layer.In this case, the saturated magnetization of free magnetic layer is approximately 400emu/cc.Curve 520 shows
Having gone out includes V10(Ni85Fe15)90Free magnetic layer magnetization in change.In this case, the saturation of free magnetic layer
Magnetization is approximately 350emu/cc.Curve 520 is shown including V10(Ni90Fe10)90Free magnetic layer magnetization in change
Become.In this case, the saturated magnetization of free magnetic layer is approximately 200emu/cc.Curve 540,550 and 560 is shown
Change in the magnetization of concentration with the vanadium for being arranged to 15 atomic percents in dilval.Curve 540 shows packet
Include V15(Ni80Fe20)85Free magnetic layer magnetization in change.In this case, the saturated magnetization of free magnetic layer is close
As be 350emu/cc.Curve 550 is shown including V15(Ni85Fe15)85Free magnetic layer magnetization in change.At this
In the case of kind, the saturated magnetization of free magnetic layer is approximately 200emu/cc.Curve 560 is shown including V15(Ni90Fe10)85
Free magnetic layer magnetization in change.In this case, the saturated magnetization of free magnetic layer is approximately 100emu/
cc.Any of combination of these doped alloys can be used to form the free magnetic layer for the MJJ device being previously discussed as.
Fig. 6 shows exemplary including being coupled to memory 620 (for example, storage system 100 of Fig. 1) according to one
Processor 610 computing system 600.Processor 610 can execute reading to memory 620 in a manner of as previously explained
Or write operation.Additionally, processor 610 and memory 620 can together with other based superconductive logics device by
It uses.In general, being operated in low temperature environment and any superconductive device of the storage of instruction or data being required to can wrap
Include memory 620.In addition, processor 610 does not need in low temperature environment；On the contrary, it can be operated at a temperature of non-cryogenic.?
In the example, memory 620 can be in isolated low temperature environment and can be via connector can maintain low temperature environment
Mode be coupled to processor 610.Memory 620 is used as a part of the storage device in data center, with
In delivering service based on cloud (such as software services, platform is service or other services).
To sum up, this disclosure relates to including the memory cell of magnetic Josephson junction (MJJ) device.MJJ device can
At least to include: first layer, it is formed on above the second layer；And third layer, it is formed below the second layer, wherein first
Layer is free magnetic layer, and the second layer is nonmagnetic layer, and wherein third layer is fixed magnetic layer.Free magnetic layer may include doping
There is the magnetic alloy of at least one of vanadium, zirconium, molybdenum or hafnium, and fixed magnetic layer may include undoped magnetic alloy.
Magnetic alloy may include at least one of the following: dilval, nickel cobalt (alloy), ferrocobalt or cobalt ferronickel close
Gold.Free magnetic layer may include the only magnetic alloy doped with vanadium.The concentration of vanadium can be in the magnetic alloy doped with only vanadium
5 atomic percents to 40 atomic percents in the range of.Free magnetic layer may include the only magnetic alloy doped with zirconium.Zirconium
Concentration can be in the range of 2 atomic percents to 20 atomic percent of the magnetic alloy doped with only zirconium.Nonmagnetic layer
It may include at least one of the following: vanadium, molybdenum, copper, aluminium, tantalum or chromium.
Memory cell can be configured as in the first magnetized state or the second magnetized state, and wherein the first magnetic
Change state can correspond to magnetized first configuration of free magnetic layer and the second magnetized state can correspond to free magnetism
Magnetized second configuration of layer, wherein magnetized first configuration of free magnetic layer can correspond to be parallel to fixed magnetic layer
Magnetized second configuration of first magnetic field in magnetic field and free magnetic layer can correspond to the magnetic for being antiparallel to fixed magnetic layer
Second magnetic field of field.Memory cell can also include: the 4th layer, be formed on above first layer；And layer 5, by shape
At below third layer, wherein each of the 4th layer and layer 5 may include niobium.
In another aspect, this disclosure relates to include the memory cell of magnetic Josephson junction (MJJ) device.MJJ device
Part may include: first layer, be formed on above the second layer；And third layer, it is formed below the second layer.First layer can
To be free magnetic layer；The second layer can be nonmagnetic layer；And third layer can be fixed magnetic layer.Free magnetic layer can be with
Including only doped with the dilval of vanadium, wherein the concentration of vanadium can be in 5 atomic percents to the model between 20 atomic percents
In enclosing.Fixed magnetic layer may include the only dilval doped with vanadium, and wherein the concentration of vanadium can be with 5 atomic percents to 10 originals
Between sub- percentage.Nonmagnetic layer may include at least one of the following: vanadium, molybdenum, copper, aluminium, tantalum or chromium.Memory list
Member can be configured as in the first magnetized state or the second magnetized state, and wherein the first magnetized state can correspond to
Magnetized the first of free magnetic layer configures and the second magnetized state can correspond to magnetized the second of free magnetic layer and match
It sets, wherein magnetized first configuration of free magnetic layer can correspond to be parallel to first magnetic field in the magnetic field of fixed magnetic layer simultaneously
And magnetized second configuration of free magnetic layer can correspond to be antiparallel to second magnetic field in the magnetic field of fixed magnetic layer.Freely
Magnetosphere can have the thickness between 10 angstroms to 25 angstroms.Fixed magnetic layer can have the thickness between 10 angstroms to 25 angstroms.It deposits
Storage unit can also include: the 4th layer, be formed on above first layer；And layer 5, it is formed below third layer,
Wherein each of the 4th layer and layer 5 may include niobium.
In another aspect, this disclosure relates to include the memory cell of magnetic Josephson junction (MJJ) device.MJJ device
Part can include at least: (1) first layer and the second layer, be formed on above third layer；(2) the 4th layers and layer 5,
It is formed below third layer.Each of first layer and the second layer can be free magnetic layer；Third layer can be non-magnetic
Property layer；And each of the 4th layer and layer 5 can be fixed magnetic layer.Each free magnetism in free magnetic layer
Layer may include the magnetic alloy doped at least one of vanadium, zirconium, molybdenum or hafnium.Each fixed magnetic in fixed magnetic layer
Layer may include undoped second magnetic alloy.Magnetic alloy may include at least one of the following: dilval,
Nickel cobalt (alloy), ferrocobalt or CoNiFe alloy.Free magnetic layer may include the only magnetic alloy doped with vanadium.Vanadium it is dense
Degree can be in the range of only doped with 5 atomic percents to 40 atomic percent of the magnetic alloy of vanadium.Free magnetic layer can
To include the only magnetic alloy doped with zirconium.The concentration of zirconium can the magnetic alloy doped with only zirconium 2 atomic percents extremely
In the range of 20 atomic percents.Nonmagnetic layer may include at least one of the following: vanadium, molybdenum, copper, aluminium, tantalum or chromium.
It should be appreciated that method depicted herein, module and component are merely exemplary.Alternatively, or in addition, may be used
At least partly to execute functionality described herein by one or more hardware logic components.Such as and it is unrestricted, it can be with
The hardware logic component of the illustrative type used includes field programmable gate array (FPGA), specific integrated circuit
(ASIC), Application Specific Standard Product (ASSP), system on chip (SOC), Complex Programmable Logic Devices (CPLD) etc..It is being abstracted still
Still in the sense that defining, realize that any arrangement of the component of identical function effectively " is associated with ", so that desired function quilt
It realizes.Therefore, it is combined into herein and realizes that any two component of specific function can be counted as " associated " each other, make
Desired function is obtained to be implemented but regardless of framework or intermediate member.Similarly, so associated any two component may be used also
To be considered as " being operably connected " or " being coupled " to each other to realize desired function.
Function associated with described example in the disclosure can also include being stored in non-state medium
Instruction.As used herein term " non-state medium " refers to storage so that machine (such as processor 610) is with specific side
The data of formula operation and/or any medium of instruction.Exemplary non-state medium includes that non-volatile media and/or volatibility are situated between
Matter.Non-volatile media include such as hard disk, solid state drive, disk or tape, CD or tape, flash memory,
The networked version of EPROM, NVRAM, PRAM or other such media or such medium.Volatile media includes for example
Dynamic memory, such as DARM, SRAM, cache or other such media.Non-state medium is different from transmission medium,
But it can be used in conjunction with transmission medium.Transmission medium is used for or from machine transmitting data and/or instruction.Exemplary biography
Defeated medium includes coaxial cable, fiber optic cables, copper wire and wireless medium (such as radio wave).
In addition, those skilled in the art will recognize that, the boundary between the function of aforesaid operations is merely illustrative.It is more
The function of a operation can be combined into single operation and/or the function of single operation and can be distributed in additional operations.And
And alternative embodiment may include multiple examples of specific operation, and the order operated can be in various other embodiments
It is modified.
Although the disclosure provides particular example, in the model for not departing from the disclosure as illustrated in following claim
In the case where enclosing, various modifications may be made and changes.Correspondingly, the description and the appended drawings will be with illustrative rather than restricted meaning
Justice considers, and all such modifications are intended to be included in the scope of the present disclosure.It is herein relative to particular example
Described any benefit, advantage or solution to the problem are not intended to the key for being interpreted any or all of claim
, required or essential characteristic or element.
In addition, as used herein term " one (a) " or " one (an) " are defined as one or more than one.And
And the use of the introductory phrase (such as "at least one" and " one or more ") in claim is not construed as secretly
Show even if when identical claim includes introductory phrase " one or more " or "at least one" and indefinite article " one " or " one
It is a " when, another claim element is introduced by indefinite article "a" or "an" and also wants the right comprising such introducing
Any specific rights requirement of element is asked to be limited to the invention comprising element as only one.Same situation is suitable for definite article
Use.
Unless otherwise stated, such as term of " first " and " second " is used to arbitrarily describe in such term
Element between distinguish.Therefore, these terms are not necessarily intended to indicate the Time priority of such element or other are excellent
First grade.
Claims (15)
1. a kind of memory cell, comprising:
Magnetic Josephson junction (MJJ) device, magnetism Josephson's junction device include at least: first layer, the first layer
It is formed on above the second layer；Third layer, the third layer are formed below the second layer, wherein the first layer is certainly
By magnetosphere, the second layer is nonmagnetic layer, wherein the third layer is fixed magnetic layer, wherein the free magnetic layer packet
The magnetic alloy doped at least one of the following: vanadium, zirconium, molybdenum or hafnium is included, and the wherein fixed magnetic layer packet
Include undoped second magnetic alloy.
2. memory cell according to claim 1, wherein the magnetic alloy includes at least one of the following:
Dilval, nickel cobalt (alloy), ferrocobalt or CoNiFe alloy.
3. memory cell according to claim 1, wherein the free magnetic layer includes the only magnetic doped with vanadium
Property alloy.
4. memory cell according to claim 1, wherein the concentration of the vanadium is only doped with the magnetic conjunction of vanadium
In the range of 5 atomic percents to 40 atomic percents of gold.
5. memory cell according to claim 1, wherein the free magnetic layer includes the only magnetic doped with zirconium
Property alloy.
6. memory cell according to claim 1, wherein the concentration of the zirconium is only doped with the magnetic conjunction of zirconium
In the range of 2 atomic percents to 20 atomic percents of gold.
7. memory cell according to claim 1, wherein the nonmagnetic layer includes at least one of the following:
Vanadium, molybdenum, copper, aluminium, tantalum or chromium.
8. memory cell according to claim 1, wherein the memory cell is configured in the first magnetization shape
State or the second magnetized state, and wherein first magnetized state is matched corresponding to magnetized the first of the free magnetic layer
It sets, and second magnetized state corresponds to magnetized second configuration of the free magnetic layer, wherein the free magnetism
Magnetized first configuration of layer corresponds to the first magnetic field for being parallel to the magnetic field of the fixed magnetic layer, and described
Magnetized second configuration of free magnetic layer corresponds to the of the magnetic field for being antiparallel to the fixed magnetic layer
Two magnetic fields.
9. memory cell according to claim 1, further includes: the 4th layer, described 4th layer is formed on described first
Layer top；And layer 5, the layer 5 are formed below the third layer, wherein in described 4th layer and the layer 5
Each include niobium.
10. a kind of memory cell, comprising:
Magnetic Josephson junction (MJJ) device, magnetism Josephson's junction device include at least: first layer, the first layer
It is formed on above the second layer；And third layer, the third layer is formed below the second layer, wherein the first layer is
Free magnetic layer, the second layer is nonmagnetic layer, and the third layer is fixed magnetic layer, wherein the free magnetic layer
Including only doped with the dilval of vanadium, wherein the concentration of the vanadium is in 5 atomic percents to the model between 20 atomic percents
In enclosing, wherein the fixed magnetic layer includes the only dilval doped with vanadium, and wherein the concentration of the vanadium in 5 atoms hundred
Divide between ratio to 10 atomic percents.
11. memory cell according to claim 10, wherein the nonmagnetic layer includes at least one in the following terms
: vanadium, molybdenum, copper, aluminium, tantalum or chromium.
12. memory cell according to claim 10, wherein the memory cell is configured in the first magnetization
State or the second magnetized state, and wherein first magnetized state corresponds to magnetized the first of the free magnetic layer
Configuration, and second magnetized state corresponds to magnetized second configuration of the free magnetic layer, wherein the free magnetic
Property layer magnetized first configuration correspond to the first magnetic field for being parallel to the magnetic field of the fixed magnetic layer, and institute
Magnetized second configuration for stating free magnetic layer corresponds to the magnetic field for being antiparallel to the fixed magnetic layer
Second magnetic field.
13. memory cell according to claim 10, wherein the free magnetic layer has between 10 angstroms to 25 angstroms
Thickness.
14. memory cell according to claim 13, wherein the fixed magnetic layer has between 10 angstroms to 25 angstroms
Thickness.
15. memory cell according to claim 10, further includes: the 4th layer, described 4th layer is formed on described
One layer of top；And layer 5, the layer 5 are formed below the third layer, wherein described 4th layer and the layer 5
Each of include niobium.
Applications Claiming Priority (3)
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| US15/218,031 | 2016-07-24 | ||
| US15/218,031 US9972380B2 (en) | 2016-07-24 | 2016-07-24 | Memory cell having a magnetic Josephson junction device with a doped magnetic layer |
| PCT/US2017/042951 WO2018022385A1 (en) | 2016-07-24 | 2017-07-20 | Memory cell having a magnetic josephson junction device with doped magnetic alloy layer |
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| CN109478590A true CN109478590A (en) | 2019-03-15 |
| CN109478590B CN109478590B (en) | 2022-09-23 |
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| CN201780044204.7A Active CN109478590B (en) | 2016-07-24 | 2017-07-20 | Memory cell having magnetic josephson junction device with doped magnetic layer |
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| US (1) | US9972380B2 (en) |
| EP (1) | EP3488476B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110739010A (en) * | 2019-10-21 | 2020-01-31 | 中国科学院上海微系统与信息技术研究所 | Low temperature memory cell and memory device |
| CN110739010B (en) * | 2019-10-21 | 2021-05-11 | 中国科学院上海微系统与信息技术研究所 | Low temperature memory cell and memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018022385A1 (en) | 2018-02-01 |
| EP3488476B1 (en) | 2021-12-08 |
| US20180025775A1 (en) | 2018-01-25 |
| CN109478590B (en) | 2022-09-23 |
| US9972380B2 (en) | 2018-05-15 |
| EP3488476A1 (en) | 2019-05-29 |
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