CN109478499A - Dry high aspect ratio features - Google Patents
Dry high aspect ratio features Download PDFInfo
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- CN109478499A CN109478499A CN201780046110.3A CN201780046110A CN109478499A CN 109478499 A CN109478499 A CN 109478499A CN 201780046110 A CN201780046110 A CN 201780046110A CN 109478499 A CN109478499 A CN 109478499A
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- desiccant
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- 239000000758 substrate Substances 0.000 claims abstract description 183
- 238000000034 method Methods 0.000 claims abstract description 95
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 238000001035 drying Methods 0.000 claims abstract description 39
- 238000009423 ventilation Methods 0.000 claims abstract description 10
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Medicinal Preparation (AREA)
- Detergent Compositions (AREA)
Abstract
A kind of method of drying of semiconductor substrate may include that desiccant is applied on semiconductor substrate, and wherein desiccant soaks semiconductor substrate.Method may include that the chamber for accommodating semiconductor substrate is heated to above to the temperature of the atmospheric boil of desiccant, the vapor liquid equilibrium until reaching the indoor desiccant of chamber.Method can further comprise making chamber vent, wherein ventilation evaporates the liquid phase of desiccant from semiconductor substrate.
Description
Technical field
This technology is related to the drying material with high aspect ratio features.More specifically, this technology is related to high-aspect-ratio
The cleaning of feature and drying material, to reduce the deformation of pattern collapse (collapse) or minutiae.
Background technique
Make it possible integrated circuit by the technique for generating complex pattern material layer on the surface of the substrate.In substrate
Upper production patterning materials need the controlled method for applying and removing material.In order to remove, can chemically or physically be lost
It carves for numerous purposes, including the pattern in photoresist is transferred in following layer, thinning layer, or make to have existed on surface
Feature lateral dimensions it is thinning.Once material is etched or otherwise handles, substrate or material layer are cleaned or are prepared
For further operating.
Cleaning procedure can use many different reagents for different technique.These techniques can be related to release liner, cleaning
Processed layer or pattern removes particle or prepares substrate for subsequent technique.As device characteristic continues in nanometer range
Reduction, the pattern collapse due to caused by the property of cleaning fluid are likely to become a problem.For example, the water for being used as detergent may
Problem is caused due to its high surface tension, this may cause substrate features by stress or deformation.Device characteristic is smaller, water
Show bigger impact in structure with other fluids.
Accordingly, there exist the demands for having the improved system and method that can be used to produce high-quality device and structure.These and
Other demands are solved by this technology.
Summary of the invention
The system and method for drying of semiconductor substrate may include that desiccant is applied on semiconductor substrate, wherein desiccant
Soak semiconductor substrate.Method may include the atmospheric boil that the chamber for accommodating semiconductor substrate is heated to above to desiccant
Temperature, the vapor liquid equilibrium until reaching the indoor desiccant of chamber.Method can further comprise making chamber vent, wherein ventilation makes to do
The liquid phase of drying prescription is evaporated from semiconductor substrate.
The method of drying of semiconductor substrate also may include carrying out pressure seal to the indoor semiconductor substrate of chamber, and then exist
The vapor liquid equilibrium of desiccant is formed in chamber.Method also may include after having reached the vapor liquid equilibrium of desiccant, continue by
The chamber for accommodating semiconductor substrate is heated at least about 100 DEG C of temperature.In embodiments, desiccant is miscible with water, and
Can (for example) be or including isopropanol.Semiconductor substrate can define the patterned features with the depth-to-width ratio greater than 5, and desiccant
It can complete wetting patterned features.
Water can be removed completely from semiconductor substrate by applying desiccant.In addition, applying desiccant may include from semiconductor substrate
Remove completely one or more operations of any fluid other than desiccant.Heating operation may include airtightly closed chamber
And it is contained in the semiconductor substrate of the indoor rinsing of chamber.Heating operation also may include heating chamber, in the liquid phase of desiccant
Balance is formed between gas phase.Heating operation can further comprise the temperature that chamber is heated to above to the atmospheric boil of desiccant
Degree.Method also may include optionally purifying chamber with inertia predecessor after venting.
This technology also may include the additional method of drying of semiconductor substrate, including desiccant is applied to semiconductor substrate.
In embodiments, the wettable semiconductor substrate of desiccant or substrate features can be covered.Method may include that heating wherein accommodates
The chamber of semiconductor substrate, to form balance between the liquid and gas of desiccant.Heating can be by least one of desiccant
Divide and be maintained liquid form, and enough liquid can be maintained to be covered on the feature defined in substrate.Method also may include by chamber
Room is exposed to vacuum condition, and wherein vacuum condition evaporates simultaneously purge drying agent from chamber.
The heating operation of drying means can proceed to the temperature below about 150 DEG C.Method can further comprise then by chamber
Room is exposed in vacuum, by chamber vent to atmospheric conditions.In some embodiments, method also may include with air or inertia
Gas purification chamber.Desiccant used in method may include isopropanol or acetone.In addition, chamber is exposed to vacuum condition
It may include the pressure that the indoor pressure of chamber is dropped below to about 100 supports (Torr) from atmospheric conditions.Reduce the indoor pressure of chamber
It may occur in the time cycle less than about 5 minutes.
This technology also may include the other methods of dry substrate.Method may include desiccant is applied on substrate, wherein
Desiccant soaks substrate.Method may include the chamber that airtightly sealing accommodates substrate, and may include that desiccant is formed in chamber
Vapor liquid equilibrium.Method can further comprise increasing the indoor temperature of chamber, by the desiccant surface of the liquid portion of desiccant
Tension falls below predetermined threshold.Method also may include decompression chamber, substantially remove liquid drying from substrate wherein depressurizing
Agent.In embodiments, predetermined threshold may include the desiccant surface tension of about 20mN/m.Substrate may include or define multiple figures
Case feature, it is characterised in that the depth-to-width ratio greater than 5.Applying desiccant may include the elevation-over drying in patterned features
Agent coated substrates, and in embodiments, desiccant is characterized in that the surface tension at about 21 DEG C is less than about 25mN/m.?
During decompression operation, desiccant can be from the substantial dehumidification in the surface of substrate (de-wet).Desiccant during decompression operation connects
Feeler can maintain to be greater than 70 ° or about 70 °.In some embodiments, the chamber pressure during decompression operation can maintain atmosphere
It is more than pressure.
Compared with traditional technology, such technology can provide many benefits.For example, due to removal technique more evenly, this dress
Set the pattern deformation that can reduce the whole surface for crossing substrate.In addition, improved method can clean skill by other tradition are limited
Multiple Internal processing steps that art is utilized reduce queue (queue) time.In conjunction with following description and attached drawing, in more detail
Describe these and other embodiments and their many advantages and feature.
Detailed description of the invention
The nature and advantages to disclosed embodiment can be realized by the rest part of reference book and attached drawing
Further understand.
Figure 1A illustrates the expression of the influence of the fluid in the groove according to the embodiment of this technology.
Figure 1B illustrates the embodiment according to this technology, when trench wall starts deformation, the influence of the fluid in groove
Expression.
The method that Fig. 2 illustrates the drying of semiconductor substrate according to the embodiment of this technology.
Fig. 3 illustrates the chart of the different fluid surface tension properties according to the embodiment of this technology.
Fig. 4 illustrates the chart of the influence according to the temperature of this technology embodiment to the surface tension of isopropanol.
Fig. 5 is illustrated between meniscus (meniscus) of the explanation according to the isopropyl alcohol and water of the embodiment of this technology
The temperature and pressure figure of pressure difference and their saturation pressure.
The method that Fig. 6 illustrates the drying of semiconductor substrate according to the embodiment of this technology.
Fig. 7 illustrates explanation according to the not cocurrent flow under the different temperatures for given contact angle of the embodiment of this technology
The chart of body surface tension properties
In the various figures, similar component and/or feature can numeral references having the same.In addition, can be by by phase
As the letter distinguished between component and/or feature follow the later various parts for distinguishing same type in reference marker.If
The first numeral reference is used only in the description, then description is suitable for the similar of the first numeral reference having the same
Either one or two of component and/or feature, and it is unrelated with letter suffix.
Specific embodiment
During many different phases of semiconductor processes, cleaning surface and material.Cleaning procedure can be related to wet type
Etching, cleaning and drying process, to remove undesired residue and fluid from substrate.Cleaning procedure is likely to occur in one kind
Fluid starts and in the autoincrementing operation that is cleaned with other one or more fluids, until device cleans and dry.Since water is to more
The solvent nature of kind material, therefore water is used in many cleaning procedures.In general, then with the technique that may include heat and other fluids
Combination remove water.
Dimensionally continue the device pattern shunk and feature may include the minutiae for etching or being formed on substrate.Example
Such as, many processing operations can work on the material on substrate or substrate or form groove in the material on substrate or substrate.
It is defined as height and the depth-to-width ratio of width ratio in a device may be very high, and can be 5,10,20,50,100 or bigger number
Magnitude.The many of these features can not only have high depth-to-width ratio, and can have the reduction size of for example several nanoscales.Example
Such as, the width of any specific column or wall between two grooves can be only several nanometers.Such material is thinner, and impact stress can
It can be influenced caused by the integrality of structure bigger.In addition, the material for constituting structure may also influence to apply pressure or stress pair
The influence of material, either baseplate material, dielectric, photoresist etc..
It is possible that problem when cleaning fine high aspect ratio features, because may show may be remote high for cleaning fluid
In the surface tension that can be managed by feature.In the design with multiple features, layer or material, even if a small amount of feature distortion
Or collapse and may also lead to short circuit by generated device, to keep its inoperable.For example, water is to have very much as solvent
, but it substantially show can the easily feature on damaged substrate surface tension.Many traditional technologies can be by
Cleaning is carried out with the material with the surface tension lower than water or attempts to control this problem by complicated removal technique is executed.
It is that operation is dried by with supercritical fluid for the promising technology that fluid removes in clean operation.Although
These technologies can provide surface that is dry and being not easy to pattern collapse, but prepared amount and related number of operations may
Reduce the efficiency of entire processing substrate.
Illustrative processes can help to understand the problem related with pattern collapse, and be described herein: in general technique,
Substrate can be exposed to one or more detergents, including acid, alkali or other reactive fluids or predecessor.In the implementation of this technology
In mode, can also carry out may include water at least one cleaning operation.Water can be used for bathing, it is spraying or other possibly also with water to move
Except in the cleaning operation of another detergent, thereby increases and it is possible to cause water to be comprised in feature, including high aspect ratio features.Because of water
The various substances of dissolution are easy, so can be used in any amount of cleaning procedure, are made on substrate with removing
Extra chemicals.
In order to remove water from substrate, any amount of operation can be carried out, from evaporation water to being cleaned.For having profundity
For width is than feature, pillar (pillar) or the substrate of other minutiaes, evaporation water may cause many problems.These features
It can bear 1/tens or smaller laplace pressure up to a MPa.However, water is characterized in that in room temperature or about 21 DEG C
The laplace pressure of surface tension or a few MPa to 25 DEG C with about 73mN/m is high than the ability of substrate features by one
A order of magnitude.In addition, removing from the feature of such as groove with dampening, water may provide additional problem.
Semiconductor substrate can have an a series of groove of formation, may (a part as cleaning procedure) stand-by water or its
His fluid cleaning.When removing water or other fluids from substrate and groove, as shown in Figure 1, curved liquid can be formed in each groove
Face.Meniscus is characterized in that flowing intracorporal laplace pressure, and with the surface tension of fluid, contact angle θ and groove
Width d is related.In other words, pressure drop may cross meniscus and be formed, and the tension applied to wall increases along meniscus.Along
Contact with trench wall and the air above meniscus are also likely to be present the surface tension of fluid.These pressure may be several
MPa, and cannot by trench wall restoring force or internal limit stresses manage.Therefore, as shown in Figure 1B, wall may be in response to make
Start to be deformed inward with power on it.However, laplace pressure is practical with the adjustment of pattern deformation and geometry
On may will increase, to further complicate the issue and lead to pattern collapse.
Theoretically, if the groove of structuring all maintains the fluid of equal quantities in groove to be removed, pressure will be in spy
The two sides of sign maintain constant and equilibrant force.However, when fluid start evaporation when, the fine difference between groove may influence from
Each groove removes how many fluid.Even if the small difference of fill level between adjacent trenches becomes uneven also with power
And start above-mentioned runaway event.
Traditional idea, which can lead to, only seeks the fluid with compared with low surface tension, and then carries out similar cleaning and do
Dry operation is to remove water and dry substrate.However, this technology follow the group of liquidus of the desiccant under vapor liquid equilibrium
Dry technology is closed, more uniformly to evaporate or remove desiccant.By the surface tension properties using desiccant and its evaporate special
Sign is, it can be achieved that improved desiccant removes.Therefore, present inventor have determined that by by the fluid of relatively low surface tension with
Removal process combination based on temperature can reduce surface tension effect and more easily manage.Therefore, and advantageously, although table
Reveal higher surface tension, but the more fluids thought than before can be used in cleaning and drying process.
Although the rest part of this specification will conventionally refer to semiconductor processes, this technology is not considered limited to
Semiconductor.For example, many micro-fluidic technologies can benefit from techniques described below and operation.Microfluid is related to receiving may have
Rice range in channel in microlitre or more a small range fluid operation.Due to property of the material in such size, ditch
Road deformation may equally bring and can be improved or be solved the problems, such as by this technology.Therefore, this technology should not be considered as limited to partly lead
The processing and manufacture of body, because it may be equally applicable to may relate to pattern deformation or collapse many technologies of problem.
Fig. 2 is gone to, the method 200 of the drying of semiconductor substrate according to the embodiment of this technology is illustrated.Method can relate to
And in operation 210, desiccant is applied to semiconductor substrate.Although the operation of method can start in operation 210, should manage
Solution can execute one or more before applying operation can selection operation.For example, any amount of patterning and cleaning behaviour can be performed
Make, so as to cause cleaning operation.Clean operation can utilize one or more acid, alkali, inert fluid or other predecessors to be used for clearly
Clean and removal.It can may include that hydrofluoric acid solution, hydrochloric acid solution, hydrogen peroxide are molten in Exemplary materials used in clean operation
Liquid, Ammonia, sulfuric acid solution and other acid and alkaline materials it is one or more.The combination of reagent can also implemented
It is used in mode, all such as (e.g.) APM, is the mixture of ammonium hydroxide, hydrogen peroxide and water, and it can be used for from substrate table
Face removes particle.
After having applied detergent, water cleaning can be carried out to remove these reactive species and further clean substrate.
Then such water can be removed with desiccant in operation 210.The application of desiccant can be used for from substrate (being included in shape
At groove and other features in) remove, substantial water entirely or entirely.It can be submerged with wherein substrate and optionally
The bath of stirring is applied.Desiccant can also be sprayed-on, and be applied in immersion, or otherwise be coated with or be applied to substrate
On.Any amount of mechanism can be used, desiccant can be used to remove water or other fluids from substrate.In embodiments,
The wettable semiconductor substrate of desiccant, and the groove being formed in substrate can be at least partly filled, or can be filled up completely to be formed
Groove in substrate, to remove completely any fluid other than desiccant from semiconductor substrate.Used desiccant
Amount can based on include substrate size and the indoor free space of chamber amount and change.For example, 300mm substrate will be usually not required to
Desiccant that will be more as 450mm substrate sufficiently soaks substrate.Similarly, with the substrate phase including complex characteristic pattern
Than substrate pattern is fewer, and the surface area of exposure is fewer, it is possible to use less desiccant makes substrate complete wetting.
As will be explained further, the amount of desiccant associated with the substrate in chamber can be to ensure that substrate maintains
At least liquid drier of minimum volume, and incompletely evaporate.For example, if desiccant (it may include volatile matter) is being placed on
Start to evaporate in atmospheric conditions before in chamber, then dry spot (dry may occur in the trench or along the part of substrate
spot).These drying spots may allow still wetted region to have the out-of-balance force acted on its wall, this may cause
Deformation and pattern collapse.Therefore, when entering in chamber, the amount of desiccant associated with substrate may be enough to maintain substrate complete
It soaks entirely or fully.However, too many desiccant is also likely to be a problem, Zhu Ruruo substrate in the bath of desiccant,
Or it is completely submerged in desiccant when being placed in chamber.(such as lead to when executing pressure in the chamber for accommodating substrate and adjusting
Gas) when, before returning to atmospheric conditions, too many liquid may cause liquid and cannot fully evaporate or from system in system
Extraction.There may be feature distortion or pattern collapses for any feature on substrate or the remaining liq desiccant in groove.Cause
This, there is the substrate of the complete wetting of the excess liq reagent of the minimum of the exposed surface of covering substrate, which can provide, prevents drying
The protection of spot development, while the desiccant of minimum volume is maintained, to ensure removal appropriate.
Desiccant applies operation 210 can execute in substrate chamber room, or alternatively can by substrate provide chamber it
Preceding execution.Desiccant, which is applied to the substrate on the outside of chamber, can help to remove completely water or other fluids, although it may be noted that really
It protects the substrate when being transferred in chamber and maintains wetting.Desiccant, which is applied to the indoor substrate of chamber and can promote, ensures at least part
Liquid drier it is associated with substrate, although adjustable chamber is configured to ensure that before sealing by water or other fluids from chamber
Room removes.This may by desiccant is thoroughly applied to substrate and along the inside of chamber all surface and occur.
Cleaning and desiccant, which apply operation, in atmospheric conditions, or to carry out under conditions of the feature based on desiccant.For example, in atmosphere
Under the conditions of can apply under vacuum or at reduced temperatures as the desiccant of steam, to ensure at least part of desiccant
It is liquid and complete wetting substrate.
In operation 220, once substrate is accommodated in chamber, chamber can be closed, and can apply heat to chamber,
Or it is applied on the platform of placement substrate.Chamber can airtightly seal in embodiments or pressure seal, to ensure that pressure is close
Envelope container and the configuration of various chambers are applicable to technique 200, and it can provide pressure sealing container.Chamber can have enough heat
Quality is retained with providing heat in container during heating operation.For example, if such container has more during heating operation
It defines or controlled heat distribution, then it can provide more consistent result among wafers.Chamber, which can also have, to be based on being located
The volume of the wafer size of reason, such as the chip of 300mm, 450mm or 600mm.The amount of used desiccant may be based in chamber
Indoor free space amount determines.A certain amount of desiccant can be used, will allow to form vapor liquid equilibrium in chamber, without
Make desiccant evaporating completely.
Heating operation 220 can be carried out so that desiccant evaporates, and is closing under atmospheric pressure or slightly above atmospheric pressure
The vapor liquid equilibrium of desiccant is formed or developed in container.In other words, heating may initially result in the desiccant on substrate
Certain evaporation capacity.This can reach the flat of partial vapour pressure and hold-up pressure in the gas phase and liquid phase for meeting or exceeding desiccant
It is carried out under temperature and pressure when weighing apparatus.Then heat can be continued to so that temperature is increased to the atmospheric boiling point of desiccant or more,
Balance achieved is maintained as temperature and pressure continues to increase in chamber simultaneously.The heat of application can be based on such as desiccant
Boiling point, or can be at low-level temperature, to generate a part of steam.For example, in embodiments, the temperature in container can
Be increased to about 25 DEG C, about 30 DEG C, about 35 DEG C, about 40 DEG C, about 45 DEG C, about 50 DEG C, about 60 DEG C, about 70 DEG C, about 80 DEG C, about 90 DEG C or
About 100 DEG C.Once reaching vapor liquid equilibrium, heat can be continued to the atmospheric boil for being higher than desiccant during operation 220
Temperature.For example, in embodiments, temperature can be risen above or about 100 DEG C, be higher than or about 110 DEG C, be higher than or about 120
DEG C, it is higher than or about 130 DEG C, is higher than or about 140 DEG C, be higher than or about 150 DEG C, be higher than or about 160 DEG C, be higher than or about 170 DEG C, is higher than
Or about 180 DEG C, it is higher than or about 190 DEG C, is higher than or about 200 DEG C, or is higher, and depends on the feature of desiccant.
When the indoor pressure of chamber is increased with temperature, the vapor liquid equilibrium of desiccant is tieed up during can heating herein
It holds.Can operate 220 period heating chambers temperature can the feature based on desiccant and predefine.Temperature and most of materials
Surface tension it is directly related, and be inversely proportional.Therefore, as the temperature of fluid increases, surface tension is reduced.By reduction chamber
The surface tension of indoor desiccant can reduce the desiccant active force acted in substrate features.Because desiccant is heating
Vapor liquid equilibrium is maintained during technique, so desiccant will not unnecessarily boil in the feature of substrate.
At specified or scheduled temperature, in operation 230, chamber can be ventilated or be depressurized.When chamber returns to atmosphere
When pressure, fluid can evaporate in chamber.Based on the temperature and pressure in container, when ventilation, evaporation may be quick
Or it is substantially instant.Ventilation can carry out in stepwise fashion, or can quickly be reduced to atmospheric conditions.For example, openable subtract
Pressure valve, can come to life technique.Release may be slow, to lead to the gradually evaporation and release of desiccant, or can be fast
Speed, steam is converted to the liquid for obtaining more instant.For example, may occur or execute to be likely less than or about in embodiments
The ventilation of 30 minutes time cycles.In embodiments, time quantum is likely less than or about 25 minutes, is less than or about 20 minutes,
Be less than or about 15 minutes, be less than or about 10 minutes, be less than or about 5 minutes, be less than or about 1 minute, less than being about 30 seconds, be less than or
About 15 seconds, it is less than or about 10 seconds or shorter.By using high temperature and pressure convert, this technology can the surface for crossing substrate and
The vapor reforming rate more evenly of desiccant is generated in feature.In this way, desiccant can removed from the surface of substrate
The effect of surface tension to substrate features is controlled during drying process.Optionally, chamber available air or including (for example) nitrogen, argon
Or the inert fluid purification of helium, to ensure that substrate is completely dried, and desiccant condensate will not reshape on substrate.
Exemplary substrate may include in semiconductor processes, microfluidic device, implantable device (implantable
Device material used in) and the more materials that may have micro-dimension or nano-sized features.For semiconductor substrate
Speech, substrate may be or include the material or combination of silicon, germanium, gallium, carbon, arsenic, selenium, tellurium or periodic table the 13rd, 14 or 15 race's elements.It is right
For other devices, plastics, polymer, ceramics and other metals and nonmetal structure can form substrate or substrate features.?
In embodiment, example feature may include pattern, and pattern includes ladder, via hole (vias), groove, channel or other designs,
It is characterized in that depth-to-width ratio be greater than or about 1,2,3,4,5,6,7,8,9,10,12,14,16,18,20,22,25,30,35,40,
45,50,60,70,80,90,100 or higher.Feature may include having discussed any depth-to-width ratio or by those listed above
Any one of value or median constitute or the range of the depth-to-width ratio including any one of those listed above value or median
Groove.The gap of groove being also characterized by between groove is smaller than or about 100nm, 80nm, 60nm, 50nm, 45nm,
40nm, 35nm, 30nm, 25nm, 20nm, 15nm, 10nm, 5nm, 1nm or smaller.Feature also can be by wall, column or column structure institute
It defines, it can be characterized by height is less than or length, width or the diameter of about 10 microns and above-mentioned any size.In column or
Interval between other vertical structures may also be similar to above-mentioned size.
Exemplary desiccants can be polarity or nonpolar, and may include several different chemical formulas.Desiccant may include
Fluid miscible with water, or at least partly solution is generated with water.Desiccant according to this technology may include carbon compound, contain
Halogen compounds, or can be used for removing other natural or artificial fluids of water from substrate.Illustrative desiccant include alcohol,
Ketone, fluorocarbon, chlorohydrocarbon and other materials miscible with water.For example, desiccant may include one or more compounds,
Including acetone, isopropanol, perflexane and engineering fluid (including the 3M company production by Minnesota State Maplewood
NovecTM7100 and NovecTM7000).It can be by cleaning agent or a series of cleaning agent before desiccant unmixing with water
Processing leaves the surface of the material coating miscible with desiccant, can be used for remove water, and at the end of the serial cleaning agent
Remove final cleaning agent.When water is initial wash agent and uses such as NovecTM7100 etc water Immiscible fluid conduct
When desiccant, such operation can be carried out.Desiccant is characterized in that the surface tension at about 21 DEG C is less than or about 75mN/m, small
In or about 70mN/m, be less than or about 65mN/m, be less than or about 60mN/ is less than or about 55mN/m, be less than or about 50mN/m, be less than or
About 45mN/m, is less than or about 40mN/m, is less than or about 35mN/m, is less than or about 30mN/m, is less than or about 25mN/m, is less than or about
20mN/m, is less than or about 15mN/m, is less than or about 10mN/m, is less than or about 5mN/m, is less than or about 1mN/m, in about 1mN/m and
It between about 10mN/m and about 25mN/m, or include any other numerical value in the range of these are listed between about 30mN/m
Or internal range.For example, using isopropanol as desiccant, and it is characterized in that the surface tension at about 21 DEG C is about
23mN/m。
In the exemplary drying means that this technology is covered, water is removed from substrate using isopropanol.Substrate is at it
Multiple grooves are etched in surface, it is characterised in that the gap between vertical structure is 26nm, and depth-to-width ratio is about 21.It will be different
Propyl alcohol desiccant is applied to substrate, to remove remaining water.Apply enough isopropanols to soak substrate and groove.By isopropanol
It is applied to the level of the elevation-over of groove, and continuous isopropanol layer is formed and in the elevation-over of groove along the upper of substrate
Surface leaves.It places a substrate in the chamber of sealing.
Chamber is heated to form the vapor liquid equilibrium of the indoor isopropanol of chamber.Notice liquid isopropanol in chamber and edge
Substrate surface residual.Heat continues to be applied to chamber, temperature is increased to about 100 DEG C or more, this is provided about
The corresponding chambers pressure of 30psi.Under these conditions, the surface tension of calculated isopropanol is about 13mN/m.By chamber
Ventilation, makes desiccant evaporation, and dry substrate is imaged.There is no deformation or pattern collapses, and process results are
Repeatable.
The surface tension of isopropanol under aeration condition is confirmed as and engineering fluid NovecTM7100 in similar model
It encloses, engineering fluid NovecTM7100 have the surface tension of about 13.6mN/m under 25 DEG C and atmospheric pressure.Because in various experiments
In influence of the surface tension to substrate features has been determined, so using NovecTM7100 have carried out illustrative processes.In technique
In, use the substrate with the substrate discussed in the example above for isopropanol with similar features.After water cleaning, with
It is cleaned afterwards with isopropanol, Novec is applied in the mode similar with the isopropanol of previous examplesTM7100.Device is done at 25 DEG C
It is dry.Substrate is imaged, and feature distortion and pattern collapse has occurred.
Inventionwithout being bound to any specific theory, potentially contribute to understand the knot of two experiments to the discussion of possible mechanism
Fruit.As previously mentioned, the surface tension of cleaning agent and desiccant is to feature applied force.The material for forming these features has to stress
Natural resistance, although this resistance is relatively low.For example, as shown in figure 3, diagrammatic representation is opposite according to the embodiment of this technology
In the different surface tension of liquid properties of the deflection of the vertical direction from feature.It may include defining groove that line 305, which illustrates,
The restoring force of the silicon features of the line of side wall.The groove that it is about 21 with about 26nm gap width and depth-to-width ratio that this feature, which can be similar to,
Exemplary structure.Those skilled in the art will readily appreciate that this technology similarly covers different characteristic sizes, and more
High depth-to-width ratio and thinner feature are able to bear even lower opposite power.Other lines illustrate by each fluid with
The power applied in the feature that they are contacted by surface tension.For example, line 310 illustrates the surface tension applied by isopropanol
Power, line 315 illustrates by NovecTMThe power of 7100 surface tension applied, line 320 are illustrated by NovecTM7000 institutes
The power of the surface tension of application, and line 325 illustrates the power of the surface tension applied by perflexane.Line 330 illustrate by
Supercritical CO2The power of the surface tension applied.Therefore, mathematical model estimation example feature and structure will bear only by
Supercritical CO2The power that is applied of surface tension, the surface tension less than 1mN/m is shown at 25 DEG C.As described above, sharp
Use NovecTMThe result of 7100 exemplary tests carried out at 25 DEG C will further support the result.
As previously mentioned, temperature is inversely proportional with surface tension, and the temperature for therefore improving desiccant can reduce surface tension.Figure
4 illustrate the chart of the influence according to the temperature of the embodiment of this technology to the surface tension of isopropanol.Similar to Fig. 3, line
405 illustrate the restoring force of foregoing similar silicon features.Diagrammatic representation as the temperature rises, surface temperature and by fluid
The forces associated applied reduces.Line 410 illustrates the pressure of surface tension and application of the isopropanol at 25 DEG C, and line 415 illustrates
The pressure of surface tension and application of the isopropanol at 50 DEG C, line 420 illustrate surface tension of the isopropanol at 75 DEG C and
The pressure of application, line 425 illustrate the pressure of surface tension and application of the isopropanol at 100 DEG C, and line 430 illustrates isopropanol
The pressure of surface tension and application at 125 DEG C, line 435 illustrate surface tension of the isopropanol at 150 DEG C and application
Pressure, line 440 illustrate the pressure of surface tension and application of the isopropanol at 200 DEG C, and line 445 illustrates isopropanol 225
The pressure of surface tension and application at DEG C.Therefore, the temperature for suggesting isopropanol again should be about 225 DEG C or more by model
Height, to reduce surface tension, it is sufficient to generate the power of the tension of the restoring force lower than its feature contacted.
However, may relate to and drying because producing proof isopropanol without the acceptable results of pattern collapse
Other related mechanism of technique.In other words, individual surface tension feature acceptable desiccant is limited in show it is low
In those of the power of restoring force of structure soaked with desiccant desiccant.Therefore, with special when plant bulk is lower than 20nm
The reduction of size is levied, the available desiccant that cannot assign deformation may be limited to supercritical fluid process.On the contrary, inventor is
It determines by the technique similar with technique discussed in the displosure content is run through is executed, more streams can be used in drying process
Body, without causing deformation or pattern collapse.
Occur after the deformation for the stress that pattern collapse may apply on the wall for depending on groove.For example, deformation may
Not exclusively cause pattern collapse, thereby increases and it is possible to the wall that will not occur in the adjacent structure being in contact with each other or structure be caused to deflect.It is logical
Often, if cohesive force (power caused by such as surface tension) be more than restoring force (internal stress of such as material), if or deflection reach phase
The degree of adjacent structure contact, then may occur pattern collapse.In some cases, though when deformation occurs, adjacent structure
It may not collapse completely.On the contrary, wall or structure be likely to be breached cohesive force and restoring force it is equal balance deflection.Therefore, one
In a little embodiments, a certain amount of deformation may occur during technique, and pattern collapse may not occur.Because described
The evaporation of desiccant occurs, so the cohesive force generated in structure may reduce, this may also lead to deflection and also reduces.Cause
This, may deform in the embodiment during heating process, and degree is less than the distance between two adjacent structures
Half, thereby increases and it is possible to be up to aboutBetween 1nm, 2nm, 3nm, 4nm, 5nm or bigger but less than two adjacent structures
All apart from or distance half.
The mode of desiccant evaporation may will affect feature whether occurs collapse.The scope of the claims is not limited, it may
Mechanism be related to along desiccant liquidus execute drying process.As explained with reference to method 200, the chamber of substrate is accommodated
Room can be heated to generate the vapor liquid equilibrium of desiccant in chamber.The liquid of desiccant can be further decreased by continuing heating chamber
Partial surface tension.With increasing in the indoor temperature of chamber, pressure also similarly increases, and the vapor liquid equilibrium of desiccant along
The liquidus of desiccant and maintain.
Because desiccant maintains its boiling point, when chamber vent, the reduction of pressure can lead to desiccant and evaporate immediately.To the greatest extent
Pipe evaporation will lead to the indoor temperature of chamber and begin to decline, but by continuing to make chamber vent, desiccant can be with the boiling of fluid
Point curve returns to atmospheric conditions and evaporates entire liquid portion.Because when chamber is exposed to atmospheric conditions, pressure drop may be
Very quickly, so desiccant evaporation can be uniform in entire chamber and in the feature of substrate.In fact, depending on
The degree of pressure reduction, rapidly evaporation is likely to occur in entire liquid portion.
In addition, in addition rapid evaporation can overcome meniscus pressure effect explained above.Again, when liquid level drop to it is low
When the height of groove, commonly used desiccant fluid can form meniscus in each groove.When meniscus formation,
Due to Laplce explained above and capillary pressure effect, the pressure drop for crossing meniscus increases.However, working as desiccant
When being saturated in chamber under the boiling point of desiccant, this pressure drop as caused by formation meniscus may cause companion in same position
With boiling.Therefore, when the removing fluids from chamber, boiling can offset pressure drop and prevent from forming meniscus.In this way, may be used
Reduce the power being applied in substrate features and power can be maintained at a below to the restoring force for defining the material of feature.In addition, adjacent
Level imbalance between feature may not lead to deformation or pattern collapse, because of every side pressure applied from feature
It is reduced.
Go to Fig. 5, illustrate temperature, pressure chart, which illustrates between the meniscus of isopropyl alcohol and water pressure difference and it
Saturation pressure.As shown, overcoming the power of meniscus using the technique other than the surface tension for reducing desiccant
Ability certain benefits of this technology can be explained further.Described technique is allowed using the stream with high surface tension
Body is as desiccant, because the controlled vaporization of fluid can overcome the problems, such as pointed by the model of individual surface tension.By
The formation of the meniscus in substrate features is potentially offset when removing desiccant, can avoid from relatively high surface tension
The feature distortion of fluid.It can make the surface of large volume liquid forming the power that may be assigned by the evaporation of fluid at meniscus
Power deviates, so that feature is inward towards fluid deformation.In this way, the drying process of no deformation can be carried out, although desiccant
Feature may is that traditionally expection can cause the surface tension of feature distortion or pattern collapse.By the work for executing this technology
Skill can avoid pattern deformation by usually many fluids used in drying process.
In addition, as further illustrated in fig. 5, the influence along the pressure drop of the liquidus of desiccant can be lower than atmospheric conditions
Similar fashion use.The premise of method 200 is that the temperature of the desiccant in pressure tight chamber is risen above its boiling
The technique of point, this will increase chamber pressure.Then it can be depressurized by ventilation, when condition is restored to atmosphere, this will lead to stream
The evaporation of body.On the contrary, in the chamber containing substrate and vapor-liquid saturation desiccant, along identical under vacuum conditions
Liquidus can by pressure reduction to be lower than atmospheric conditions, to generate above-mentioned same effect.
Fig. 6 illustrates the method 600 of the drying of semiconductor substrate according to the embodiment of this technology.As shown, and such as
Described in preceding, substrate, which can define, have been formed and clean many features.Cleaning or cleaning operation can be performed before method 600.
At operation 610, desiccant can be applied on substrate to remove any other fluid as discussed above.The application of desiccant
It can be similar to the operation 210 of method 200, and may include any material discussed in the technique.
Desiccant can be applied in chamber, or can be applied before placing a substrate in chamber.Chamber can be sealed,
And at optional operation 620, chamber can be applied heat to, to form balance between the liquid and gas of desiccant.Heat
Amount, the amount of applied desiccant and cavity volume all can determine, so that at least part desiccant maintains liquid.In embodiment
In, heat can be the smallest and be merely serve to form vapor liquid equilibrium.For example, in embodiments, temperature can be increased to be lower than or
About 100 DEG C, and can be increased to and be lower than or about 90 DEG C, 80 DEG C, 70 DEG C, 60 DEG C, 50 DEG C, 45 DEG C, 40 DEG C, 35 DEG C, 30 DEG C or 25 DEG C.
In some embodiments, because vapor liquid equilibrium can be formed suitably in atmospheric conditions, it is possible that not applying heat to
Chamber.
At operation 630, chamber can be exposed to vacuum, can evaporate simultaneously purge drying agent from chamber.Similar to method
200, the reduction of the pressure from liquidus may cause evaporation, the rapidly evaporation of the liquid portion including desiccant.In reality
Apply in mode, vacuum can be by the indoor pressure reduction of chamber to being lower than the amount of atmospheric conditions, including is lower than or about 500 supports, be lower than or
About 400 supports, are lower than or about 300 supports, are lower than or about 200 supports, are lower than or about 100 supports, are lower than or about 50 supports, are lower than or about 10 supports,
It is lower than or about 1 support, or is lower than or about 100 millitorrs.Vacuum can be when with discussed in the above-mentioned aeration about method 200
Between apply in the similar time cycle.Vacuum capacity can temperature in amount and container based on fluid to be removed, because of pressure
The temperature of cooling chamber will be continued by reducing.Executable optional operation, including chamber is purified as described above, or is grasped via ventilation
Make, or makes chamber back to atmospheric conditions by gas is supplied to chamber.In other embodiments, chamber can also be according to work
Skill carries out active heating, to limit additional moisture intrusion, or for subsequent processing operation.Same process can be used to offset
The formation of meniscus, because the mechanism that desiccant is removed is identical as method 200, the difference is that they are being lower than big gas bar
It is carried out under part.The advantages of vacuum evaporation of desiccant is that potential volatility or flammable desiccant can be used, without with increasing
The related security consideration of the temperature and pressure added.
Also the executable above method is to control or maintain surface tension effect, the contact angle including desiccant.As previously mentioned,
Surface tension on special characteristic may be influenced by the contact angle of the desiccant contacted with substrate surface.In general, on surface
Fluid Volume can have the contact angle that moves forward and backward, wherein receding contact angle may be generally characterized as lesser angle.It is lesser to connect
Feeler may apply a greater amount of tension on the surface being in contact with it.These contact angles in many cases may be to temperature phase
To insensitive.However, as the contact angle of fluid increases or is caused increase, fluid may since the surface of substrate dehumidification,
This potentially contributes to remove.
Previously described some operations can quickly remove desiccant from the surface of substrate.With the reduction of characteristic size, material
Material becomes finer, the energy that the fast boiling of desiccant and removal may be shown from rapidly removing and damage spy
Sign.Rapidly boiling and removal may be dynamic change, wherein the power evaporated potentially result within substrate features or between mistake
Big pressure, this may cause deformation.Slowing down removal may not be a solution appropriate because desiccant from surface by
It gradually evaporates, the residuals or ingredient of desiccant are likely to remain on substrate or in feature.After these residues may will affect
Device quality in continuous processing operation.However, fluid can be from the table of substrate if the contact angle of desiccant is maintained higher than threshold value
It face and is exited from the feature defined.
Contact angle can be increased during the evaporation or boiling of desiccant.The work for being higher than the contact angle of threshold value by generation is generated
Skill condition, the noresidue that can be also limited the stress from rapidly evaporation operation remove.In addition, can be added material or at
Divide to increase contact angle, such as by surface modifier is added into desiccant, can add to dry chemistry effect alienation
Ingredient (phobic component), or not so can increase the contact angle of the fluid on substrate.For removing desiccant
In this technology may advantageous contact angle can be greater than or about 50 °.In embodiments, contact angle also greater than or about 55 °, be greater than
Or about 60 °, it is greater than or about 65 °, is greater than or about 70 °, be greater than or about 75 °, be greater than or about 80 °, be greater than or about 85 °, is greater than or about
90 °, it is greater than or about 95 °, is greater than or about 100 °, be greater than or about 105 °, be greater than or about 110 °, be greater than or about 115 °, is greater than or about
120 °, it is greater than or about 125 °, is greater than or about 130 °, or is higher.Contact angle can also maintain between about 70 ° and about 110 °, and can
It maintains between about 80 ° and about 100 °.Contact angle more than about 90 ° can indicate that surface has become to dredge desiccant or fluid
From, and the surface dehumidification can indicating fluid since the surface dehumidification where it or where it.
It can be by process conditions (such as temperature) Lai Xiugai contact angle be adjusted, because contact angle may be with the indirect phase of temperature
It closes.As the temperature of given desiccant increases, evaporation rate may be will affect, this may will affect contact angle.If in system
Temperature and pressure is maintained or adjusts, and to realize evaporation or boiling, then contact angle can maintain to be higher than and help to remove from substrate
The threshold value of desiccant.Therefore, method discussed above can be used for executing the drying process that can protect minutiae.By will be close
Envelope chamber is heated to that chamber pressure is also increased to first pressure and realizes the temperature of vapor liquid equilibrium, and then arrives pressure reduction
Lower than the second pressure of first pressure, decompression operation can start from substrate dehumidification desiccant or can substantially from substrate dehumidification
Desiccant.Desiccant can partly start to be formed by vapor barrier during maintaining boiling, this can make desiccant substantial
Or it substantially floats on above substrate surface.Once surface is dewet, additional removal can be performed and operate further to remove.It is some
Operation may include further evaporation operation and mechanically actuated as previously discussed, including adjusting the tilt angle on substrate,
Moving substrate, or make liquid and the second material that desiccant can be transferred to the second material from substrate.
When system temperature has increased, contact angle may become the function of chamber pressure at such a temperature, because of pressure
Evaporation rate can be adjusted according to previous discussed method.As the increase of evaporation rate is, it can be achieved that higher contact angle.Fig. 7
It illustrates and illustrates how continuous contact angle allows the chart for executing drying process at a lower temperature.The figure illustrates in difference
At a temperature of contact angle be about 90 ° isopropanol desiccant surface tension power.The figure also illustrates the spy on silicon based substrate
The restoring force of sign.As shown, this technology allows previously discussed drying process in about 50 DEG C or higher chamber temperature
Degree is lower to be executed.By the contact angle under about 90 °, desiccant can be at a lower temperature from the substantial dehumidification in the surface of substrate.It can
Pressure is adjusted to realize a certain amount of boiling, contact angle is maintained into lower temperature, this is allowed from substrate removing fluids.This
Allow minutiae by the power dehumidification of desiccant, power can be it is sufficiently low, to have little effect to feature, this allows to prevent
The deformation of film collapses.
When generation boiling and pressure is heated first pressure from substrate and is reduced to second pressure, is greater than about with being formed
When 70 ° of contact angle, it may occur however that a certain amount of cooling.Depending on the amount of desiccant, the surface area of removal desiccant and pressure drop
Amount, the cooling located on the surface of the substrate can be 20 DEG C or higher, and can be greater than or about 30 DEG C, be greater than or about 40 DEG C, be greater than or
About 50 DEG C, it is greater than or about 60 DEG C, or higher.The amount of cooling water (or final surface temperature) of generation may will affect removed stream
The surface tension of body, wherein surface tension may increase with the reduction of temperature.At temperatures sufficiently low, surface tension can
It is increased to the restoring force being enough higher than substrate features material, residue when this may result then in pattern deformation, collapse or dry
Formation.Therefore, although can temperature by contact angle and surface tension transition at about 50 DEG C, the operation of this technology can be in height
It is carried out at a temperature of about 50 DEG C.This can ensure that can during decompression dehumidification complete for the surface of desiccant from substrate it is enough
Heat.Alternatively, the indoor pressure of chamber can further decrease, such as less than about atmospheric pressure, to provide increasing during decompression operation
The window added allows sufficiently low surface tension, is attracted to following substrate to reduce desiccant liquid.Any of these techniques
It can provide the bigger control to the evaporation rate of desiccant, what this was generated in substrate features during can reducing desiccant removal
Power.
The technique that carries out in such ways allow by than heating operation and subsequent atmosphere ventilate it is less dynamic in a manner of take off
Wet and removal desiccant.By control evaporation rate, high contact angle, low surface tension desiccant state are maintained, can be carried out without residual
The desiccant of object is stayed to remove.The technique can rise above about 50 DEG C by by the indoor temperature of processing chamber, and then reduce chamber
Indoor pressure, and with improve contact angle and reduce surface tension to lower than can from substrate dehumidification and remove liquid threshold value side
Formula causes the evaporation of desiccant.By the dehumidification surface in removing technique, fine structure feature can be protected, and in the evaporation phase
Between may not also form pollutant and residue.
The drying process that described technology is evaporated using the pressure inducement of the desiccant based on vapor liquid equilibrium.It is unexpected
Ground, and advantageously, these techniques allow intrinsic based on it under a number of conditions using traditionally and being experimentally modeled as
Surface tension and the desiccant for causing pattern collapse.Described technique can provide additional approach for drying process and material,
Material can be used as the desiccant when characteristic size reduces with the device scaling in future.
In description in front, for purposes of explanation, it has been proposed that many details are to provide to the various of this technology
The understanding of embodiment.It is apparent, however, to one skilled in the art, that can be certain thin in without these details
Section, or implement certain embodiments in the case that there is additional detail.
Several embodiments are disclosed, it would be recognized by those skilled in the art that the feelings of the spirit without departing substantially from embodiment
Under condition, various modifications, alternative constructions and equivalence element can be used.In addition, not yet being retouched in order to avoid unnecessarily obscuring this technology
State many well-known techniques and element.Therefore, above embodiment is not construed as the range of limitation this technology.
When providing the range of numerical value, it should be understood that except unless the context clearly determines otherwise, be also specifically disclosed
Each median between the upper and lower bound of range (to the least part of the unit of lower limit).It include to declare in range
Any relatively narrow range between any median declaring value or not declaring, or declare in range at this any other declare
Value or median.These small range of upper and lower bounds independently can be included or be excluded in this range, and be included in
Either one or two of bound in smaller range, bound all without or each range of both bounds be also included in the technology,
By declaring that any be particularly intended to exclude of range is limited.It also include excluding when the range declared includes one or two limit
The range of either one or two of limit included by those.When providing multiple values in lists, similarly specifically disclose
Comprising or based on any range of any of these values.
Such as in this and it is as used in the appended claims, unless the context clearly determines otherwise, singular " one
(a) ", " one (an) " and " (the) " includes multiple references.Thus, for example, referring to that " material " includes multiple such materials
Material, and refer to that " reagent " includes one or more reagents and its equivalent well known by persons skilled in the art, etc..
In addition, when in the specification and following following claims in use, word " including (comprise (s)) ", " include
(comprising) ", " contain (contain (s)) ", " containing (containing) ", " including (include (s)) " and " including
(including) " it is intended to specified declared feature, entirety, component or the presence of operation, but they do not exclude the presence of or add
Add one or more other features, entirety, component, operation, movement or group.
Claims (15)
1. a kind of method of drying of semiconductor substrate, the described method comprises the following steps:
Desiccant is applied on semiconductor substrate, wherein the desiccant soaks the semiconductor substrate；
The chamber for accommodating the semiconductor substrate is heated to above to the temperature of the atmospheric boil of the desiccant, until reaching
The vapor liquid equilibrium of the indoor desiccant of chamber；With
Make the chamber vent, wherein the ventilation evaporates the liquid phase of the desiccant from the semiconductor substrate.
2. the method for drying of semiconductor substrate as described in claim 1, further includes steps of
The semiconductor substrate indoor to the chamber carries out pressure seal；
Heating accommodates the chamber of the semiconductor substrate, and the heating makes the gas phase of the desiccant and liquid phase reach steam
The balance of partial pressure and hold-up pressure；With
Continue for the chamber for accommodating the semiconductor substrate to be heated at least about 100 DEG C of temperature.
3. the method for drying of semiconductor substrate as described in claim 1, wherein the desiccant is miscible with water.
4. the method for drying of semiconductor substrate as claimed in claim 3, wherein the desiccant pack includes isopropanol.
5. the method for drying of semiconductor substrate as described in claim 1, wherein the semiconductor substrate includes having depth-to-width ratio
Patterned features greater than 5, and wherein patterned features described in the desiccant complete wetting.
6. the method for drying of semiconductor substrate as described in claim 1, wherein the step of applying the desiccant is from described half
Conductor substrate removes completely water.
7. the method for drying of semiconductor substrate as claimed in claim 6, wherein the step of applying the desiccant includes from institute
State the one or more operations for any fluid that semiconductor substrate removes completely other than the desiccant.
8. the method for drying of semiconductor substrate as described in claim 1, wherein the step of heating is held by following steps
Row:
It airtightly closes the chamber and is contained in indoor the described of the desiccant including being applied of the chamber and partly lead
Structure base board；
The chamber is heated, causes to reach balance between the liquid and gas of the desiccant；With
The chamber is heated to above to the temperature of the atmospheric boil of the desiccant.
9. the method for drying of semiconductor substrate as described in claim 1, further includes following steps: after the ventilation
The chamber is purified with inertia predecessor.
10. a kind of method of dry substrate, the described method comprises the following steps:
Desiccant is applied on the substrate, wherein the desiccant soaks the substrate；
Airtightly sealing accommodates the chamber of the substrate；
The vapor liquid equilibrium of the desiccant is formed in the chamber；
Increase the indoor temperature of the chamber, the desiccant surface tension of the liquid portion of the desiccant is fallen below pre-
Determine threshold value and reaches new vapor liquid equilibrium；With
The chamber is depressurized, wherein the decompression substantially removes liquid drier from the substrate.
11. the method for dry substrate as claimed in claim 10, wherein the predetermined threshold includes the desiccant of about 20mN/m
Surface tension.
12. the method for dry substrate as claimed in claim 10, wherein the step of applying the desiccant the following steps are included:
The substrate is coated in the elevation-over desiccant of patterned features.
13. the method for dry substrate as claimed in claim 10, wherein the desiccant is characterized in that at about 21 DEG C
Surface tension is less than about 25mN/m.
14. the method for dry substrate as claimed in claim 10, wherein the contact angle of the desiccant during the decompression
It maintains to be greater than 70 ° or about 70 °.
15. the method for dry substrate as claimed in claim 10, wherein the chamber pressure during the decompression maintains atmosphere
It is more than pressure.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662362891P | 2016-07-15 | 2016-07-15 | |
| US62/362,891 | 2016-07-15 | ||
| US201662424264P | 2016-11-18 | 2016-11-18 | |
| US62/424,264 | 2016-11-18 | ||
| PCT/US2017/042071 WO2018013896A1 (en) | 2016-07-15 | 2017-07-14 | Drying high aspect ratio features |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109478499A true CN109478499A (en) | 2019-03-15 |
| CN109478499B CN109478499B (en) | 2023-08-04 |
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| CN201780046110.3A Active CN109478499B (en) | 2016-07-15 | 2017-07-14 | Dry high aspect ratio features |
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| Country | Link |
|---|---|
| KR (1) | KR102221560B1 (en) |
| CN (1) | CN109478499B (en) |
| SG (1) | SG11201900351XA (en) |
| TW (1) | TWI767920B (en) |
| WO (1) | WO2018013896A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7030858B2 (en) * | 2020-01-06 | 2022-03-07 | 株式会社Kokusai Electric | Semiconductor device manufacturing methods, substrate processing devices and programs |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20190018045A (en) | 2019-02-20 |
| TWI767920B (en) | 2022-06-21 |
| TW201812840A (en) | 2018-04-01 |
| SG11201900351XA (en) | 2019-02-27 |
| WO2018013896A1 (en) | 2018-01-18 |
| KR102221560B1 (en) | 2021-02-26 |
| CN109478499B (en) | 2023-08-04 |
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