CN109473426A - Electrostatic discharge circuit and electronic equipment - Google Patents
Electrostatic discharge circuit and electronic equipment Download PDFInfo
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- CN109473426A CN109473426A CN201910044632.0A CN201910044632A CN109473426A CN 109473426 A CN109473426 A CN 109473426A CN 201910044632 A CN201910044632 A CN 201910044632A CN 109473426 A CN109473426 A CN 109473426A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Abstract
This application provides a kind of electrostatic discharge circuit and electronic equipments, comprising: basic static discharge unit and the bidirectionally conductive discharge cell being connected with basic static discharge unit；Wherein, bidirectionally conductive discharge cell includes first diode and the second diode；The anode of the cathode of first diode and the second diode is all connected to be protected the external pin of circuit, for receiving the electrostatic generated by protection circuit；The plus earth of first diode；The cathode of second diode exports positive static discharge current；Basic static discharge unit is for receiving positive static discharge current, and it discharges positive static discharge current, through the above scheme, reduce the excessive interference to high speed data transfer of generated parasitic capacitance when discharging electrostatic, meet bandwidth requirement when data transmission, is conducive to the transmission that data realize stability and high efficiency.
Description
Technical field
The present invention relates to semiconductor integrated circuit fields, and in particular to a kind of electrostatic discharge circuit and electronic equipment.
Background technique
With the development of electronic technology, the function of electronic product increasingly tends to be complicated, is with the difference of application scenarios
Guarantee safe and reliable operation of the electronic product in the different application scenarios, it is desirable that its antistatic interference and to static discharge
Capability Requirement is more next stringent.
Electrostatic discharge circuit (Electro-Static discharge, ESD) is particularly important in semiconductor integrated circuit
Part, main function in the chips is responsible for protecting the component of chip interior not by the damage of static discharge.With
Gradually continuous improvement of the complicated and people to ESD performance requirement of chip application scenarios, especially in the high-speed data of chip
In transmission application, it is desirable that the parasitic capacitance of the ESD circuit of the port for data transmission over the ground is smaller, in order to avoid influence data transmission
Rate.
In this regard, reduce data transmission port to ground terminal ESD circuit parasitic capacitance over the ground, to improve the high speed of data
Transmission is those skilled in the art's technical problem urgently to be solved.
Summary of the invention
The present invention provides a kind of electrostatic discharge circuit, solves and generates during to static discharge is carried out by protection circuit
The problem of biggish parasitic capacitance, has provided the ESD protection circuit of the lesser parasitic capacitance of generation.
To achieve the goals above, the embodiment of the present invention provides the following technical solutions:
First aspect present invention discloses a kind of electrostatic discharge circuit, comprising:
Basic static discharge unit and the bidirectionally conductive discharge cell being connected with the basic static discharge unit；
Wherein, the bidirectionally conductive discharge cell includes first diode and the second diode；
The anode of the cathode of the first diode and second diode is all connected to that the external of circuit is protected to draw
Foot, for receiving the electrostatic generated by protection circuit；The plus earth of the first diode；Second diode
Cathode exports positive static discharge current；
The basis static discharge unit is used to receive the positive static discharge current, and to the positive static discharge
Electric current discharges.
Optionally, in above-mentioned electrostatic discharge circuit, the first diode in the bidirectionally conductive discharge cell and
The parasitic capacitance of second diode is less than or equal to the parasitic capacitance of the basic static discharge unit.
Optionally, in above-mentioned electrostatic discharge circuit, further includes:
Bias unit, the bias unit are used to receive the supply voltage of supply voltage end generation, and to the power supply electricity
Pressure is biased, and exports bias voltage；
The basis static discharge unit receives the bias voltage and the positive static discharge current, the biased electrical
It is reverse-biased that parasitic diode in the basic static discharge unit occurs for pressure, reduces the basic static discharge unit to described
The parasitic capacitance that positive electrostatic induced current generates when being discharged.
Optionally, in above-mentioned electrostatic discharge circuit, the biasing circuit, comprising:
The third diode that anode is connected with the supply voltage end, wherein the cathode of the third diode is as institute
The output port for stating bias unit exports the bias voltage.
Optionally, in above-mentioned electrostatic discharge circuit, the biasing circuit, further includes:
Resistance, wherein one end of the resistance is connected with the third diode far from the one end at the supply voltage end,
Output port of the other end as the bias unit, exports the bias voltage.
Optionally, in above-mentioned electrostatic discharge circuit, the basis static discharge unit, comprising:
The transistor that second end is connected with second diode cathode；Wherein, the transistor is NMOS transistor, institute
State the control terminal ground connection of transistor, first end ground connection.
Optionally, in above-mentioned electrostatic discharge circuit, the basis static discharge unit, further includes:
Resistance, wherein one end of the resistance is connected with the control terminal of the transistor, another termination of the resistance
Ground.
Optionally, in above-mentioned electrostatic discharge circuit, the basis static discharge unit, comprising:
The transistor that second end is connected with second diode cathode；Wherein, the transistor is NMOS transistor, institute
State the first end ground connection of transistor；
The capacitor that one end is connected with the second end of the transistor, the other end of the capacitor respectively with the transistor
Control terminal is connected with one end of resistance, the other end ground connection of the resistance.
Optionally, in above-mentioned electrostatic discharge circuit, the basis static discharge unit, comprising:
The diode that cathode is connected with second diode cathode, the plus earth of the diode.
Second aspect of the present invention discloses a kind of electronic equipment, comprising: any one as disclosed in first aspect present invention
The electrostatic discharge circuit.
It can be seen from the above technical proposal that electrostatic discharge circuit provided by the invention, bidirectionally conductive discharge cell include
First diode and the second diode；The sun of the anode of the cathode of first diode and the second diode and second diode
Pole is all connected to be protected the external pin of circuit, for receiving the electrostatic generated by protection circuit；The anode of second diode
Ground connection, the cathode of first diode export positive static discharge current；When the electrostatic generated by the external pin of protection circuit is
When reversed electrostatic, static discharge is directly carried out by first diode；When the electrostatic generated by the external pin of protection circuit is
It when positive electrostatic, is discharged by the second diode, exports positive static discharge current；Basic static discharge unit is for connecing
Positive static discharge current is received, and is discharged again positive static discharge current.Due to quiet when being generated by protection circuit
When electricity is positive electrostatic, the second diode and basic static discharge unit are concatenated relationships, therefore the second diode and basis are quiet
The parasitic capacitance that discharge of electricity unit generates together is less than the parasitic capacitance and basic static discharge unit production that the second diode generates
Raw parasitic capacitance.Electrostatic discharge circuit provided by the invention generated parasitic capacitance when discharging electrostatic is smaller,
The excessive interference to high speed data transfer of parasitic capacitance is reduced, bandwidth requirement when data transmission is met, is conducive to data reality
The transmission of existing stability and high efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is existing electrostatic discharge circuit；
Fig. 2 is a kind of structure chart of electrostatic discharge circuit disclosed in the embodiment of the present application；
Fig. 3 is the circuit diagram of bias unit disclosed in the embodiment of the present application；
Fig. 4 is the circuit diagram of another bias unit disclosed in the embodiment of the present application；
Fig. 5 is a kind of circuit diagram of electrostatic discharge circuit disclosed in the embodiment of the present application；
Fig. 6 is the circuit diagram of another kind electrostatic discharge circuit disclosed in the embodiment of the present application；
Fig. 7 is a kind of circuit diagram of electrostatic discharge circuit disclosed in the embodiment of the present application；
Fig. 8 is the circuit diagram of another kind electrostatic discharge circuit disclosed in the embodiment of the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Currently, the existing electrostatic discharge circuit applied in semiconductor integrated circuit chip, as shown in Figure 1, including
For the transistor N1 of NMOS tube, wherein the drain electrode of transistor N1 is connected with by the external pin PIN of protection circuit, grounded-grid,
Source electrode ground connection, it should be noted that source electrode ground connection herein is also equivalent to the Substrate ground of transistor N1, can by protection circuit
It include by the chip of protection circuit or using the chip by protection circuit as peripheral circuit, by the external of protection circuit to be considered as
Pin PIN can be considered as comprising by the port of the chip of protection circuit or using the chip by protection circuit as peripheral circuit
Port, the port can be directly used for data transmission or participate in data transmission indirectly by chip.
In the electrostatic discharge circuit of such structure, when the static discharge current in electrostatic discharge circuit is larger, due to crystalline substance
The drain electrode of body pipe N1 needs to serve as ESD structure, for maintaining static discharge current in each electric discharge of entire electrostatic discharge circuit
Balanced on channel, to protect self structure not to be destroyed, therefore the drain electrode of transistor N1 would generally be stretched.
Wherein, the purpose of stretching is mainly and adds between the drain electrode of transistor N1 and the external pin PIN by protection circuit
Entering resistance, the resistance of addition can play the role of current limliting and current balance, but being stretched other than resistance is added herein,
By the drain electrode of transistor N1 and the access that is connect between the external pin of protection circuit apart from elongated, i.e., transistor N1's
Drain electrode lengthens, and is increased at a distance from the grid of transistor N1 by the external pin of protection circuit, is also equivalent to joined resistance.
And just because of the drain electrode of transistor N1 is stretched, it results in electrostatic discharge circuit and carries out transistor N1 when static discharge
The parasitic capacitance of drain electrode to substrate increase, and then result in chip not to be able to satisfy 1GHz when carrying out data transmission even higher
Bandwidth requirement, seriously affected data transmission when rate.
In view of the above-mentioned problems, the embodiment of the present application proposes a kind of electrostatic discharge circuit, reduce in electrostatic discharge circuit
The excessive interference that high speed data transfer is carried out to chip of parasitic capacitance, meets bandwidth requirement when data transmission, realizes number
According to stability and high efficiency transmission.
Referring to fig. 2, present embodiment discloses a kind of electrostatic discharge circuits, comprising:
Basic static discharge unit 201 and the bidirectionally conductive discharge cell being connected with basic static discharge unit 201
202。
Wherein, bidirectionally conductive discharge cell 202 includes first diode D1 and the second diode D2；
The anode of the cathode of first diode D1 and the second diode D2 are all connected to be protected the external pin of circuit
PIN, for receiving the electrostatic generated by protection circuit.The plus earth of first diode D1.The cathode of second diode D2 is defeated
Positive static discharge current out.
Basic static discharge unit 201 is carried out for receiving positive static discharge current, and to positive static discharge current
Electric discharge.
It should be noted that directly passing through when the electrostatic generated by the external pin PIN of protection circuit is reversed electrostatic
First diode D1 carries out static discharge；When the electrostatic generated by the external pin PIN of protection circuit is positive electrostatic, pass through
Second diode D1 discharges, and exports positive static discharge current.Basic static discharge unit 201 is for receiving positive electrostatic
Discharge current, and discharged again positive static discharge current.Due to being positive quiet when the electrostatic generated by protection circuit
When electric, the second diode D2 and basic static discharge unit 201 are concatenated relationships, therefore the second diode D2 and basic electrostatic are put
The parasitic capacitance that electric unit 202 generates together is less than or equal to the parasitic capacitance that the second diode D2 is generated or basic electrostatic is put
The parasitic capacitance that electric unit 201 generates.Electrostatic discharge circuit provided by the invention is generated when discharging electrostatic to be posted
Raw capacitor is smaller, reduces the excessive interference to high speed data transfer of parasitic capacitance, meets bandwidth requirement when data transmission, has
The transmission of stability and high efficiency is realized conducive to data.
Optionally, in another embodiment of the application, see also Fig. 2, a kind of embodiment of electrostatic discharge circuit,
Include:
The parasitic capacitance of first diode D1 and the second diode D2 in bidirectionally conductive discharge cell 202 are less than or equal to
The parasitic capacitance of basic static discharge unit 201.
Wherein, it is when first that bidirectionally conductive, which puts the parasitic capacitance of first diode D1 and the second diode D2 in single unit,
When diode D1 is breakdown, the junction capacity characteristic that diode itself carries makes diode show different capacitors in breakdown
Value, the capacitance generated can be understood as parasitic capacitance caused by diode.
When the electrostatic caused by protection circuit is reversed electrostatic, the cathode of first diode D1 passes through by protection circuit
External pin PIN, receive the reversed electrostatic that is generated by protection circuit, the plus earth of first diode D1, at this point, the one or two
The voltage of pole pipe D1 anode is greater than the voltage of cathode, so first diode D1 is connected, realizes the electric discharge of reversed electrostatic.It needs
Bright, the parasitic capacitance of first diode D1 is less than the parasitic capacitance of basic static discharge unit.
When the electrostatic caused by protection circuit is positive electrostatic, the anode of the second diode D2 passes through by protection circuit
External pin PIN, the positive electrostatic that is generated by protection circuit is received, because the anode voltage of the second diode D2 is greater than cathode
Voltage, therefore the second diode D2 is connected, the cathode of the second diode D2 exports positive static discharge current, basic static discharge list
Member 201 receives positive static discharge current, is discharged again the positive static discharge current, because of the second diode D2
Connection relationship with basic static discharge unit 201 is to connect, according to the series characteristic of capacitor it is found that the second diode D2 and base
Plinth static discharge unit 201 is connected generated parasitic capacitance, and the second diode D2 and basic static discharge list are less than or equal to
The parasitic capacitance that any one device individually generates in member 201.
It should be noted that the reversed electrostatic being previously mentioned in the present embodiment is when the electrostatic caused by protection circuit is taken
When the charge of band is negative, the characteristic showed is just elecrtonegativity, at this time to discharge to negative electrical charge, needs to open double
Reversed electrostatic discharging path into onunit 202 is as connected first diode D1, and then makes to be protected the outer of circuit
The ground terminal conducting that pin PIN is connected by the anode of first diode D1 is connect, so with the anode institute of first diode D1
The ground terminal of connection is known as reversed electrostatic to the electrostatic discharged by the direction external pin PIN of protection circuit.Correspondingly, this implementation
The positive electrostatic being previously mentioned in example is that the charge carried when the electrostatic caused by protection circuit is timing, the spy showed
Property be exactly electropositive, at this time want discharge positive charge, need to open the positive electrostatic in bidirectionally conductive discharge cell 202
Discharge path is as connected the second diode D2, and then makes that the external pin PIN of circuit is protected to pass through the second diode D2
Access conducting between the basic static discharge unit 201 connected, so with quiet to basis by the external pin of protection circuit
The electrostatic of discharge of electricity cell orientation release is known as positive electrostatic.
In the present embodiment, when realizing reversed static discharge or positive static discharge, produced by electrostatic discharge circuit
Parasitic capacitance become smaller, reduce the excessive interference to high speed data transfer of parasitic capacitance, meet data transmission when bandwidth want
It asks, is conducive to the transmission that data realize stability and high efficiency.
Optionally, in another embodiment of the application, the electrostatic discharge circuit further include:
Bias unit, wherein bias unit is used to receive the supply voltage of supply voltage end generation, and to the power supply electricity
Pressure is biased, and exports bias voltage.
Basic static discharge unit receives bias voltage and positive static discharge current, and bias voltage makes basic static discharge
Parasitic diode generation in unit is reverse-biased, what reduction basic static discharge unit generated when discharging positive electrostatic induced current
Parasitic capacitance.
Wherein, for receiving port or the section of bias voltage and positive static discharge current in basic static discharge unit
Point is same port or same node in circuit.
It is containing being protected it should be noted that supply voltage caused by the received supply voltage end of bias unit institute
The chip of circuit or using by protection circuit as peripheral circuit chip power supply voltage.
In the present embodiment, having passed through bias unit output bias voltage makes two pole of parasitism in basic static discharge unit
Pipe generation is reverse-biased, reduces the parasitic capacitance generated when basic static discharge unit discharges to positive electrostatic induced current, in turn
It is excessive to high speed to reduce parasitic capacitance caused by electrostatic discharge circuit for the parasitic capacitance for reducing electrostatic discharge circuit entirety
The interference of data transmission meets bandwidth requirement when data transmission, is conducive to the transmission that data realize stability and high efficiency.
Optionally, referring to Fig. 3, in another embodiment of the application, bias unit includes:
The third diode D3 that anode is connected with supply voltage end VDD, wherein the cathode of third diode D3 is as biasing
The output port of unit exports bias voltage.
It should be noted that the anode for the third diode D3 that bias unit is included is connected with supply voltage end VDD, connect
Voltage caused by the VDD of supply voltage end is received, supply voltage is connected third diode D3, keeps the cathode of third diode D3 defeated
Bias voltage out, wherein the size of bias voltage is related with the conducting voltage of third diode D3, and conducting voltage is bigger to be exported
Bias voltage it is bigger.
Optionally, in another embodiment of the application, referring to fig. 4, bias unit, further includes:
Resistance R, wherein one end of resistance R is connected with third diode D3 far from one end of supply voltage end VDD, another
The output port as bias unit is held, bias voltage is exported.
It should be noted that the purpose that resistance R is added herein is in order to avoid the component in basic static discharge unit
By, third diode D3 because of the influence of capacitor produced by the junction capacity characteristic of diode itself, so as to cause basis is influenced
Rate of release of the static discharge unit to electrostatic.Wherein, the value range of resistance R has no apparent restriction, can use arbitrary value, but
It is influence of the capacitor to basic static discharge unit produced by order to preferably avoid third diode D3, generally takes the larger value.
Optionally, in another embodiment of the application, referring to Fig. 5, basic static discharge unit 501, comprising:
The transistor N1 that second end is connected with the second diode cathode；Wherein, transistor N1 is NMOS transistor, transistor
The control terminal of N1 is grounded, first end ground connection.
It should be noted that in the present embodiment, the first end of transistor N1 is source electrode, second end is drain electrode, control terminal
For grid.The second end of transistor N1 is connected with the cathode of the second diode D2, for receiving in bidirectionally conductive discharge cell 502
The output of the second diode D2 cathode positive static discharge current, and by the grounded-grid of transistor N1 and source electrode ground connection,
Transistor N1 conducting is realized, to realize the electric discharge again of positive static discharge current, wherein the source electrode of transistor N1 is grounded with regard to phase
When in the Substrate ground of transistor N1.
Wherein, the second end of transistor is also connected with bias unit 503, and specifically, the second end of transistor and biasing are single
The cathode of third diode D3 in member 503 is connected, for receiving the bias voltage of bias unit output.
In the present embodiment, the forward direction that basic static discharge unit 501 is exported by receiving bidirectionally conductive discharge cell 502
The bias voltage that static discharge current and bias unit 503 export, puts basic static discharge unit 501 to positive electrostatic
When electric current is discharged, bias voltage makes the drain electrode of the transistor N1 in basic static discharge unit 501 between ground terminal
Parasitic diode occur reverse-biased, make parasitic diode because capacitor caused by the junction capacity characteristic of diode itself is smaller,
To reduce the parasitic capacitance of basic static discharge unit 501, make parasitic capacitance caused by entire electrostatic discharge circuit more
It is small.Therefore electrostatic discharge circuit provided by the present embodiment, the excessive interference to high speed data transfer of parasitic capacitance is reduced, is met
Bandwidth requirement when data are transmitted is conducive to the transmission that data realize stability and high efficiency.
Optionally, in another embodiment of the application, referring to Fig. 6, basic static discharge unit 601, further includes:
Resistance R1, wherein one end of resistance R1 is connected with the control terminal of transistor N1, the other end ground connection of resistance R1.
It should be noted that in the present embodiment, resistance R1 being added and is used for the purpose of allowing to incite somebody to action the drain electrode of transistor N1
The grid of transistor couples, and then increases the grid voltage of transistor N1, and transistor N1 is enabled to realize positive electrostatic
Before electric discharge, transistor N1 conducting is triggered in advance, realizes static discharge.Bidirectionally conductive discharge cell 602, bias unit in Fig. 6
The 603 efforts processes with basic static discharge unit 601 and no significant difference shown in fig. 5, so, the work of the present embodiment
The course of work that may refer to embodiment corresponding to Fig. 5 as process, just no longer repeats one by one herein.
Optionally, in another embodiment of the application, referring to Fig. 7, basic static discharge unit 701, comprising:
The transistor N1 that second end is connected with the second diode D2 cathode；Wherein, transistor N1 is NMOS transistor, crystal
The first end of pipe N1 is grounded.
The capacitor C1 that one end is connected with the second end of transistor N1, the control with transistor N1 respectively of the other end of capacitor C1
End is connected with resistance R1, the other end ground connection of resistance R1.
It should be noted that in the present embodiment, the first end of transistor is source electrode, second end is drain electrode, and control terminal is
Grid.The second end of transistor N1 is connected with the cathode of the second diode D2, for receiving the output of the second diode D2 cathode
Positive static discharge current, and positive static discharge current is realized again by the connection type of the grid of transistor N1 and source electrode
Secondary electric discharge, wherein the source electrode ground connection of transistor N1 is equivalent to the Substrate ground of transistor N1.
It should be further noted that in the present embodiment, it is to allow the drain electrode of transistor N1 that resistance R1, which is added,
The grid of transistor is coupled, and then increases the grid voltage of transistor N1, transistor N1 is enabled to realize that forward direction is quiet
Before discharge of electricity, transistor N1 conducting is triggered in advance, realizes static discharge.And between the branch that resistance R1 and transistor N1 is formed
Capacitor C1 is added, be in order in the case where same resistance resistance value so that the grid of transistor N1 is more easier to couple, transistor
N1 more fast conducting.
Wherein, the second end of transistor N1 is also connected with bias unit 703, specifically, the second end of transistor N1 and partially
The cathode for setting the third diode D3 in unit 703 is connected, for receiving the bias voltage of bias unit output.
In the present embodiment, the forward direction that basic static discharge unit 701 is exported by receiving bidirectionally conductive discharge cell 702
The bias voltage that static discharge current and bias unit 703 export, makes basic static discharge unit to positive static discharge
When electric current is discharged, bias voltage makes the drain electrode of the transistor N1 in basic static discharge unit 701 between ground terminal
Parasitic diode generation is reverse-biased, makes parasitic diode because capacitor caused by diode junction capacitance characteristic is smaller, to reduce
The parasitic capacitance of basic static discharge unit 701, keeps parasitic capacitance caused by entire electrostatic discharge circuit smaller.Therefore this reality
Electrostatic discharge circuit provided by example is applied, the excessive interference to high speed data transfer of parasitic capacitance is reduced, meets data transmission
When bandwidth requirement, be conducive to data realize stability and high efficiency transmission.
Optionally, in another embodiment of the application, referring to Fig. 8, basic static discharge unit 801, comprising:
The diode Z1 that cathode is connected with the second diode D2 cathode, wherein the plus earth of diode Z1.
It should be noted that the cathode of diode Z1 is connected with the second diode D2 cathode, put for receiving bidirectionally conductive
The positive static discharge current that second diode D2 cathode exports in electric unit 802, and positive electrostatic is put by diode Z1
The electric discharge again of electric current.
Wherein, the cathode of diode Z1 is also connected with bias unit 803, and specifically, the cathode of diode Z1 and biasing are single
The cathode of third diode D3 in member 803 is connected, for receiving the bias voltage of bias unit output.
In the present embodiment, the forward direction that basic static discharge unit 801 is exported by receiving bidirectionally conductive discharge cell 802
The bias voltage that static discharge current and bias unit 803 export, puts basic static discharge unit 801 to positive electrostatic
When electric current is discharged, it is anti-that the parasitic diode of the diode Z1 in basic static discharge unit 801 occurs for bias voltage
Partially, make parasitic diode capacitor as caused by the junction capacity characteristic of diode itself smaller, to reduce basic electrostatic
The parasitic capacitance of discharge cell 801, so that total parasitic capacitance that electrostatic discharge circuit generates is smaller.Therefore the present embodiment is provided
Electrostatic discharge circuit, reduce the excessive interference to high speed data transfer of parasitic capacitance, meet data transmission when bandwidth want
It asks, is conducive to the transmission that data realize stability and high efficiency.
The embodiment of the present application discloses a kind of electronic equipment, including electrostatic discharge circuit.Wherein, the electrostatic discharge circuit
Specific implementation process it is consistent with the electrostatic discharge circuit shown in realization principle and above-described embodiment, reference can be made to, it is no longer superfluous here
It states.In specific implementation, the electronic equipment can include but is not limited to mobile phone, tablet computer, other universal serial bus
(Universal Serial Bus, USB) interface equipment etc..
Professional technician can be realized or using the present invention.Profession of the various modifications to these embodiments to this field
It will be apparent for technical staff, the general principles defined herein can not depart from spirit or model of the invention
In the case where enclosing, realize in other embodiments.Therefore, the present invention will not be limited to the embodiments shown herein,
And it is to fit to the widest scope consistent with the principles and novel features disclosed herein.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
Claims (10)
1. a kind of electrostatic discharge circuit characterized by comprising
Basic static discharge unit and the bidirectionally conductive discharge cell being connected with the basic static discharge unit；
Wherein, the bidirectionally conductive discharge cell includes first diode and the second diode；
The anode of the cathode of the first diode and second diode is all connected to be protected the external pin of circuit, uses
In the reception electrostatic generated by protection circuit；The plus earth of the first diode；The cathode of second diode
Export positive static discharge current；
The basis static discharge unit is used to receive the positive static discharge current, and to the positive static discharge current
It discharges.
2. electrostatic discharge circuit according to claim 1, which is characterized in that described in the bidirectionally conductive discharge cell
First diode and the parasitic capacitance of second diode are less than or equal to the parasitic capacitance of the basic static discharge unit.
3. electrostatic discharge circuit according to claim 1, which is characterized in that further include:
Bias unit, the bias unit be used for receive supply voltage end generation supply voltage, and to the supply voltage into
Row biasing, exports bias voltage；
The basis static discharge unit receives the bias voltage and the positive static discharge current, and the bias voltage makes
Parasitic diode generation in the basis static discharge unit is reverse-biased, reduces the basic static discharge unit to the forward direction
The parasitic capacitance generated when electrostatic induced current is discharged.
4. electrostatic discharge circuit according to claim 3, which is characterized in that the bias unit, comprising:
The third diode that anode is connected with the supply voltage end, wherein the cathode of the third diode is as described inclined
The output port for setting unit exports the bias voltage.
5. electrostatic discharge circuit according to claim 4, which is characterized in that the bias unit, further includes:
Resistance, wherein one end of the resistance is connected with the third diode far from the one end at the supply voltage end, another
The output port as the bias unit is held, the bias voltage is exported.
6. electrostatic discharge circuit according to claim 1, which is characterized in that the basis static discharge unit, comprising:
The transistor that second end is connected with second diode cathode；Wherein, the transistor is NMOS transistor, the crystalline substance
The control terminal of body pipe is grounded, first end ground connection.
7. electrostatic discharge circuit according to claim 6, which is characterized in that the basis static discharge unit, further includes:
Resistance, wherein one end of the resistance is connected with the control terminal of the transistor, the other end ground connection of the resistance.
8. electrostatic discharge circuit according to claim 1, which is characterized in that the basis static discharge unit, comprising:
The transistor that second end is connected with second diode cathode；Wherein, the transistor is NMOS transistor, the crystalline substance
The first end of body pipe is grounded；
The capacitor that one end is connected with the second end of the transistor, the control with the transistor respectively of the other end of the capacitor
End is connected with one end of resistance, the other end ground connection of the resistance.
9. electrostatic discharge circuit according to claim 1, which is characterized in that the basis static discharge unit, comprising:
The diode that cathode is connected with second diode cathode, the plus earth of the diode.
10. a kind of electronic equipment characterized by comprising any one electrostatic discharge circuit as described in claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910044632.0A CN109473426B (en) | 2019-01-17 | 2019-01-17 | Electrostatic discharge circuit and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910044632.0A CN109473426B (en) | 2019-01-17 | 2019-01-17 | Electrostatic discharge circuit and electronic device |
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| CN109473426A true CN109473426A (en) | 2019-03-15 |
| CN109473426B CN109473426B (en) | 2020-11-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110336262B (en) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | Surge protection circuit |
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|---|---|
| CN109473426B (en) | 2020-11-10 |
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