CN109473423B - Semiconductor lighting device with LED lamp string - Google Patents

Semiconductor lighting device with LED lamp string Download PDF

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Publication number
CN109473423B
CN109473423B CN201811006558.5A CN201811006558A CN109473423B CN 109473423 B CN109473423 B CN 109473423B CN 201811006558 A CN201811006558 A CN 201811006558A CN 109473423 B CN109473423 B CN 109473423B
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led
conductive
glass baffle
electrodes
glass
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CN201811006558.5A
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CN109473423A (en
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不公告发明人
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Tai'an Taishan Intelligent Technology Co ltd
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Yueqing Zhige Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Abstract

The invention relates to a semiconductor lighting device with an LED lamp string, which is provided with a first glass baffle and a second glass baffle, wherein the surface of the first glass baffle is provided with two conductive convex columns, the second glass baffle is provided with a deep groove protruding outwards, and the deep groove is filled with half of transparent conductive materials to form a conductive part and a non-conductive part; the conductive convex column and the conductive part of the deep groove are electrically connected to the horizontal conductive plate, the terminals are LED out through two connecting plates below the horizontal plate, the outer sides of the two connecting plates are provided with elastic devices, and an LED lamp string structure is arranged between the first baffle plate and the second baffle plate.

Description

Semiconductor lighting device with LED lamp string
Technical Field
The invention relates to the field of solid-state lighting materials, in particular to a semiconductor lighting device with an LED lamp string.
Background
An LED is a solid-state semiconductor device that can directly convert electrical energy into light energy. Compared with the traditional incandescent lamp and fluorescent lamp, the white light LED has the advantages of low power consumption, high luminous efficiency, long service life, energy conservation, environmental protection and the like, so that the white light LED can be widely applied to the field of daily illumination and can enter the field of display equipment.
Currently, a cob (chip on board) package structure is mainly used in a semiconductor lighting device, and in many cases, a plurality of LED chips are fixed on a substrate, connected in series and parallel by wire bonding, and then, resin is integrally sealed. According to the packaging structure, once one LED chip in the packaging body is damaged, the LED chip cannot be replaced, and the whole packaging body can be failed and cannot work due to a series of serial connection modes.
Disclosure of Invention
Based on the problem in the packaging, the invention provides a semiconductor lighting device with an LED lamp string, which comprises a first glass baffle and a second glass baffle, wherein the surface of the first glass baffle is provided with two conductive convex columns, the second glass baffle is provided with a deep groove protruding outwards, and the deep groove is filled with half of transparent conductive materials to form a conductive part and a non-conductive part; the first glass baffle plate and the second glass baffle plate are respectively and vertically fixed on two horizontal conductive plates, the conductive convex columns and the conductive parts of the deep grooves are electrically connected to the horizontal conductive plates, terminals are LED out through two connecting plates below the horizontal conductive plates, elastic devices are arranged on the outer sides of the two connecting plates and used for adjusting the distance between the first glass baffle plate and the second glass baffle plate, and an LED lamp string structure is arranged between the first glass baffle plate and the second glass baffle plate.
Wherein, LED lamp cluster structure includes a plurality of LED encapsulates, LED encapsulate include:
a fluorescent glass plate;
first and second LED chips mounted on opposite sides of said fluorescent glass plate, said first LED chip having first and second electrodes, said second LED chip having third and fourth electrodes;
the fluorescent glue coats the first LED chip, the second LED chip and the fluorescent glass plate, and the coating shape of the fluorescent glue is cuboid or cube;
connection holes on the first, second, third and fourth electrodes and exposing the first, second, third and fourth electrodes;
the shallow grooves are positioned on the facing surfaces of the first LED chip and the second LED chip and are respectively communicated with the connecting holes;
the deep groove is positioned outside the first side faces of the first and second LED chips and communicated with the shallow groove, and the shallow groove and the deep groove are formed on the surface of the fluorescent glue;
and a transparent conductive material including a first portion filling the connection hole and the shallow trench, a second portion partially filling the deep trench, and a third portion protruding on a second side opposite to the deep trench, having a first conductive path including the second portion and the first portion to connect the first and third electrodes, and a second conductive path including the third portion and the first portion to connect the second and fourth electrodes;
the third portion protruding matches the shape of the recessed portion of the deep trench not filled with the transparent conductive material.
In the present invention, the first conductive path is in a C-shape, and the second path is in an inverted C-shape.
In the invention, the transparent conductive material is an oxide or transparent metal material such as indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide and the like.
In the invention, the fluorescent glue contains fluorescent powder or fluorescent crystal.
In the present invention, the package body applies a voltage through the second and third portions of the transparent conductive material to connect the first and second LED chips in parallel.
In the present invention, the elastic means is an insulating means, and may be, for example, rubber or the like.
In the present invention, the elastic means are respectively pressed inward by the two clamping plates.
The invention can realize the lamp string with a plurality of LED chips connected in series and parallel, is easy to replace and has simple method.
Drawings
FIG. 1 is a cross-sectional view of an LED package structure of the present invention;
FIG. 2 is a three-dimensional view of an LED package structure of the present invention;
FIG. 3 is a top view of an LED package structure of the present invention;
FIG. 4 is a right side view of the LED package structure of the present invention;
FIG. 5 is a schematic diagram of an LED light string structure according to the present invention;
fig. 6 is a structural view of a support body of the semiconductor lighting device of the present invention.
Detailed Description
Referring to fig. 1-4, the LED package structure of the present invention is a 360-degree light emitting structure, the fluorescent glass plate 1 is a rigid transparent substrate and contains corresponding fluorescent particles, the two LED chips 2 are respectively located at the upper side and the lower side of the fluorescent glass plate 1, the two chips are respectively provided with two extraction electrodes 9, the two LED chips 2 and the fluorescent glass plate 1 are coated with fluorescent glue 3, and are formed into a square or rectangular parallelepiped shape through processes such as cutting and polishing, four connection holes 4 are provided at corresponding positions of the four electrodes 9, the four connection holes 4 are filled with transparent conductive material, four shallow trenches 5 are provided on the fluorescent glue surface facing the two LED chips 2, the shallow trenches 5 are also filled with transparent conductive material and are electrically connected to the connection holes 4, the deep trenches 8 are provided at the outer side of the first side of the two LED chips 2, the deep groove 8 is communicated with the shallow groove 5, and the shallow groove 5 and the deep groove 8 are formed on the surface of the fluorescent glue 3.
The transparent conductive material is an oxide such as indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, or a transparent metal material, and includes a first portion filling the connection hole 4 and the shallow trench 5, a second portion 7 partially filling the deep trench 8, and a third portion 6 protruding on a second side opposite to the deep trench 8, and having a first conductive path including the second portion 7 and the first portion to connect the left electrode of the upper chip and the left electrode of the lower chip, and a second conductive path including the third portion and the first portion to connect the right electrode of the upper chip and the right electrode of the lower chip; and, the said third part 6 that is projected matches the concave part shape of the deep groove 8 not filled with transparent conductive material, preferably, the depth of the deep groove 8 is twice the height of the said third part 6, and the depth of the concave part of the deep groove 8 not filled with transparent conductive material is equal to the height of the third part, so when forming the light string, the two can be embedded each other, achieve the goal of electrical interconnection.
The first conducting path is of a C shape, and the second path is of an inverted C shape; the fluorescent glue comprises fluorescent powder or fluorescent crystals; the package applies a voltage through the second and third portions of transparent conductive material to connect the first and second LED chips in parallel.
Fig. 5 shows an LED light string structure of the present invention, which includes a plurality of LED package structures as described above, where the plurality of LED package structures are connected in parallel and then connected in series by embedding the protruding third portion of the previous LED package structure into the recessed portion of the deep trench that is not filled with the transparent conductive material, and a transparent silicone may be disposed between any two LED package structures to serve as an adhesive layer, where the number of the light strings may be 1 × 2, or 2 × 2, or even more.
Fig. 6 is a structural view of the semiconductor lighting device of the present invention. Wherein the surface of the glass baffle 10 of the left half is provided with two conductive studs 18, which correspond to the concave part of the deep trench of the left side in fig. 5 and are electrically connected with the transparent conductive material in the deep trench, and the glass baffle 10 of the right half has a deep groove protruding outwards, which is filled with half of the transparent conductive material, constituting a conductive part 15, and a non-conductive part 16, which is the same as that of fig. 5 above; the glass baffle 10 is fixed on a horizontal conductive plate 11, the horizontal conductive plate is made of conductive material, conductive convex columns 18 and deep-groove conductive parts 15 are electrically connected on the horizontal conductive plate 11, terminals are led out through a connecting plate 12 below the horizontal conductive plate, and elastic devices 13 are arranged on the outer sides of the two connecting plates, the elastic devices 13 are insulating devices, such as rubber and the like, and the elastic devices respectively apply pressure inwards through two clamping plates 14. The lighting device can set the proper distance between the two glass baffles 10 by adjusting the elastic device 13 so as to achieve a string of lights with different numbers of LED chips.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (1)

1. A semiconductor lighting device with LED lamp string comprises a first glass baffle and a second glass baffle, wherein the surface of the first glass baffle is provided with two conductive convex columns, the second glass baffle is provided with a deep groove protruding outwards, and the deep groove is filled with half of transparent conductive material to form a conductive part and a non-conductive part; the method is characterized in that:
the first glass baffle plate and the second glass baffle plate are respectively and vertically fixed on two horizontal conductive plates, the conductive convex columns and the conductive parts of the deep grooves are electrically connected to the horizontal conductive plates, terminals are LED out through two connecting plates below the horizontal conductive plates, elastic devices are arranged on the outer sides of the two connecting plates and used for adjusting the distance between the first glass baffle plate and the second glass baffle plate, and an LED lamp string structure is arranged between the first glass baffle plate and the second glass baffle plate;
the LED lamp string structure comprises a plurality of LED packaging bodies, wherein each LED packaging body comprises:
a fluorescent glass plate;
first and second LED chips mounted on opposite sides of said fluorescent glass plate, said first LED chip having first and second electrodes, said second LED chip having third and fourth electrodes;
the fluorescent glue coats the first LED chip, the second LED chip and the fluorescent glass plate, and the coating shape of the fluorescent glue is cuboid or cube;
connection holes on the first, second, third and fourth electrodes and exposing the first, second, third and fourth electrodes;
the shallow grooves are positioned on the facing surfaces of the first LED chip and the second LED chip and are respectively communicated with the connecting holes;
the deep groove is positioned outside the first side faces of the first and second LED chips and communicated with the shallow groove, and the shallow groove and the deep groove are formed on the surface of the fluorescent glue;
and a transparent conductive material including a first portion filling the connection hole and the shallow trench, a second portion partially filling the deep trench, and a third portion protruding on a second side opposite to the deep trench, having a first conductive path including the second portion and the first portion to connect the first and third electrodes, and a second conductive path including the third portion and the first portion to connect the second and fourth electrodes;
the third part which is protruded is matched with the shape of the concave part of the deep groove which is not filled with the transparent conductive material;
the first conductive path is C-shaped, and the transparent conductive material is indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide or a transparent metal material.
CN201811006558.5A 2016-07-17 2016-07-17 Semiconductor lighting device with LED lamp string Active CN109473423B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811006558.5A CN109473423B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with LED lamp string

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610560250.XA CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device
CN201811006558.5A CN109473423B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with LED lamp string

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CN109473423B true CN109473423B (en) 2020-03-27

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CN201811006532.0A Withdrawn CN109524391A (en) 2016-07-17 2016-07-17 Semiconductor illumination device
CN201811005807.9A Active CN109442229B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string
CN201610560250.XA Active CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device

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CN201811005807.9A Active CN109442229B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string
CN201610560250.XA Active CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102679233A (en) * 2012-06-11 2012-09-19 海安县威仕重型机械有限公司 LED (light-emitting diode) desk lamp with adjustable light source position
CN204118115U (en) * 2014-07-29 2015-01-21 中国科学院苏州纳米技术与纳米仿生研究所 Novel transparent substrate LED encapsulation structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4507982B2 (en) * 2005-05-26 2010-07-21 パナソニック電工株式会社 Lighting device
GB2497702B (en) * 2009-08-20 2014-02-12 Graviton Lite Ltd Mounting for light emitting diode
WO2011118934A2 (en) * 2010-03-23 2011-09-29 Kang Kim Light emitting diode device and lighting device using the same
CN201983025U (en) * 2011-01-21 2011-09-21 陈上贵 LED lamp and lamp body connecting structure thereof
CN102130239B (en) * 2011-01-31 2012-11-07 郑榕彬 Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part
TWI626395B (en) * 2013-06-11 2018-06-11 晶元光電股份有限公司 Light emitting device
CN103730454A (en) * 2013-12-13 2014-04-16 青岛威力电子科技有限公司 LED with functions of adjusting color temperature and improving color rendering
CN103915428A (en) * 2014-01-14 2014-07-09 四川品龙光电科技有限公司 LED light-emitting device and packaging method
CN105280627B (en) * 2014-07-08 2018-01-16 简汝伊 Light source module group and its method for packing and the lighting device with the light source module group
CN104638091B (en) * 2014-12-18 2017-10-24 上海大学 LED glass substrates
CN105336734A (en) * 2015-10-19 2016-02-17 漳州立达信光电子科技有限公司 LED vertical packaging structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102679233A (en) * 2012-06-11 2012-09-19 海安县威仕重型机械有限公司 LED (light-emitting diode) desk lamp with adjustable light source position
CN204118115U (en) * 2014-07-29 2015-01-21 中国科学院苏州纳米技术与纳米仿生研究所 Novel transparent substrate LED encapsulation structure

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CN109473423A (en) 2019-03-15
CN106024769B (en) 2018-10-02
CN109524391A (en) 2019-03-26
CN109442229B (en) 2020-07-14
CN109442229A (en) 2019-03-08
CN106024769A (en) 2016-10-12

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