CN109473370A - A kind of off line detection method of crystal column surface particle - Google Patents
A kind of off line detection method of crystal column surface particle Download PDFInfo
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- CN109473370A CN109473370A CN201811369318.1A CN201811369318A CN109473370A CN 109473370 A CN109473370 A CN 109473370A CN 201811369318 A CN201811369318 A CN 201811369318A CN 109473370 A CN109473370 A CN 109473370A
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- particle
- film layer
- line detection
- crystal column
- detection method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to a kind of off line detection methods of crystal column surface particle, comprising the following steps: step S1, in offline state, provides a unproductive wafer, forms a film layer in the semiconductor substrate of the unproductive wafer；Step S2, normal production technology is simulated, a plurality of particles, which are scattered, is arranged in the upper surface of the film layer；Step S3, the film layer is etched, forms a plurality of pyramidal structures, the upper surface of each pyramidal structure is covered with the particle；Step S4, the pyramidal structure handled through step S3 is detected, obtains the electric signal of the pyramidal structure；Position, the size of each particle and the quantity of the particle of the particle on the semiconductor substrate is calculated according to the electric signal in step S5；Step S6, normal production technology is improved.It the advantage is that, by simulating the production technology of product wafer, form pyramidal structure on NPW, effectively improve the signal strength of molecule.
Description
Technical field
The present invention relates to semiconductor detection technique field more particularly to a kind of off line detection methods of crystal column surface particle.
Background technique
With the development of semiconductor technology, the critical size of semiconductor technology is smaller and smaller, and line width is also smaller and smaller,
Requirement to machine table is higher and higher.
Many molecules (size is less than 0.1 μm) can be fallen in wafer production process, on production line in crystal column surface,
These particles can not detect in time, need when carrying out subsequent technique, when such as carrying out secondarily etched, due to the increasing of depth-to-width ratio
Greatly, the flaw indication of particle can just be shown, particle stops at least 6 hours in crystal column surface at this time, or even the meeting having
It stops to 24 hours.Such case is extremely dangerous to product wafer, easily reduction product yield, increases production cost.
Therefore, a kind of detection method that can detect molecule in time is needed, particle is avoided to rest on wafer for a long time
Surface.
Summary of the invention
The purpose of the present invention is aiming at the shortcomings in the prior art, provide a kind of off line detection side of crystal column surface particle
Method.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of off line detection method of crystal column surface particle, comprising the following steps:
Step S1, a unproductive wafer in offline state, is provided, in the semiconductor substrate of the unproductive wafer
One film layer of upper formation, the film layer cover the upper surface of the semiconductor substrate；
Step S2, normal production technology is simulated, a plurality of particles, which are scattered, is arranged in the upper surface of the film layer；
Step S3, the film layer is etched, forms a plurality of pyramidal structures, the upper surface of each pyramidal structure is covered with
One particle；
Step S4, the pyramidal structure handled through step S3 is detected, obtains the electricity of the pyramidal structure
Signal；
Particle position on the semiconductor substrate, Mei Gesuo is calculated according to the electric signal in step S5
State the size of particle and the quantity of the particle；
Step S6, according to step S5's as a result, being improved to normal production technology.
Preferably, the semiconductor substrate is silicon substrate.
Preferably, the film layer with a thickness of
Preferably, the ratio of the thickness of the film layer and the thickness of the semiconductor substrate is 0.1:1~2:1.
Preferably, the pyramidal structure is trapezoidal rotary table, and the internal diameter of the upper surface of the pyramidal structure is less than described tower-shaped
The internal diameter of the lower surface of structure.
Preferably, in the step S3, the etching is dry etching.
Preferably, further includes:
Step S7, the unproductive wafer after step S4 detection is handled, removes the particle and described
Film layer.
Preferably, the method for removing the particle and the film layer is chemical mechanical grinding.
Preferably, further includes:
Step S8, to treated that the unproductive wafer cleans through step S7, the unproductive crystalline substance is recycled
Circle.
Preferably, in the step S3, after the completion of etching, the etch by-products of the film surface are removed；Or
After the completion of etching, the etch by-products of the film surface are not removed.
The invention adopts the above technical scheme, compared with prior art, has the following technical effect that
A kind of off line detection method of crystal column surface particle of the invention, by simulating the production technology of product wafer,
Pyramidal structure is formed on unproductive wafer (Non-Productive Wafer, NPW), the signal for effectively improving molecule is strong
Degree；Information after off line is detected feeds back to current production technology, targetedly adjusts so that production technology is done, and improves product
Yields reduces production cost.
Detailed description of the invention
Fig. 1 is the flow chart of an illustrative examples of the invention.
Fig. 2 is the flow chart of a preferred embodiment of the present invention.
Fig. 3~7 are the structural schematic diagrams of a preferred embodiment of the present invention.
Appended drawing reference therein are as follows: semiconductor substrate 1；Film layer 2；Particle 3；Pyramidal structure 4.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
An illustrative examples of the invention, as shown in Figure 1, a kind of off line detection method of crystal column surface particle, packet
Include following steps:
Step S1, in offline state, a unproductive wafer, the shape in the semiconductor substrate of unproductive wafer are provided
At a film layer, film layer covers the upper surface of semiconductor substrate；
Step S2, normal production technology is simulated, a plurality of particles, which are scattered, is arranged in the upper surface of film layer；
Step S3, etched membrane layer, forms a plurality of pyramidal structures, and the upper surface of each pyramidal structure is covered with one
Grain；
Step S4, the pyramidal structure handled through step S3 is detected, obtains the electric signal of pyramidal structure；
Step S5, according to electric signal, be calculated particle position on a semiconductor substrate, each particle size and
The quantity of grain；
Step S6, according to step S5's as a result, being improved to normal production technology.
Further, in step sl, semiconductor substrate is silicon substrate.
Further, in step sl, film layer with a thickness of
Further, in step sl, preferred film layer with a thickness of
Further, in step sl, ratio 0.1:1~2:1 of the thickness of the thickness and semiconductor substrate of film layer.
Further, in step s 2, the size of particle may be the same or different.
Further, particle can regularly be scattered in the upper surface of film layer, can also be scattered in the upper of film layer at random
Surface.
Further, in step s3, the method for etching is dry etching.
Further, in step s3, pyramidal structure is trapezoidal rotary table, i.e. the internal diameter of the upper surface of pyramidal structure is less than tower
The internal diameter of the lower surface of shape structure.
It further, in step s3, can be secondary by accumulation etch by-products or removal etching in etching process
The method of product obtains the pyramidal structure with different form ratios, i.e., for same particle, under same etching technics, and product
Tired etch by-products remove the pyramidal structure difference that etch by-products obtain, tower-shaped in the case where accumulating etch by-products
The depth-to-width ratio of structure is smaller, and in the case where removing etch by-products, the depth-to-width ratio of pyramidal structure is larger, passes through such side
Formula realizes different amplified signals to same particle.
As shown in Fig. 2, a kind of off line of crystal column surface particle of the invention is examined on the basis of above-mentioned illustrative examples
Survey method, further includes:
Step S7, the unproductive wafer after step S4 detection is handled, removes particle and film layer.
Step S8, to treated that unproductive wafer cleans through step S5, unproductive wafer is recycled.
Further, in step s 5, the particle of semiconductor substrate upper surface is removed by the method for chemical mechanical grinding
And film layer.
Further, in step s 6, semiconductor substrate is cleaned using detergent, then will be partly led using nitrogen
After body substrate drying, reused after semiconductor substrate being recycled.
As shown in figure 3 to figure 7, the knot of one preferred embodiment of off line detection method of a kind of crystal column surface particle of the invention
Structure process is as follows:
As shown in figs. 34, step S1, semi-conductive substrate 1 is provided, film layer 2 is formed, film layer 2 is covered on semiconductor substrate
1 upper surface；
As shown in figure 5, step S2, the normal production technology of simulation, 3 particles, 3,3 particles 3 are fallen in technical process and are scattered
The upper surface of film layer 2 is set；
As shown in fig. 6, step S3, etched membrane layer 2, form 3 pyramidal structures 4, the upper surface covering of each pyramidal structure 4
There is a particle 3；
Step S4, off line detection is carried out to the semiconductor substrate 1 handled through step S3.
As shown in fig. 7, step S5, handling the semiconductor substrate 1 after step S4 detection, particle 3 and film are removed
Layer 2.
Step S6, to treated that semiconductor substrate 1 cleans through step S5, semiconductor substrate 1 is recycled.
The off line detection method of crystal column surface particle of the invention, specific use process is as follows: running in a production technology
After the time of one end, which is detected；
It is formed about on the surface of a silicon substrateFilm layer, by silicon substrate by the board of the production technology so that
Surface of silicon, which is scattered, various sizes of particle；
Blank etching (i.e. without the etching of mask layer) will be carried out by the silicon substrate after board, forms pyramidal structure；
The silicon substrate is detected, the electric signal of reflection pyramidal structure is obtained, and further obtains particle size, particle
Quantity and particle position；
Feed back to current production technology through above-mentioned particle information, after allowing to carry out the production technology, quickly in time to
Grain is targetedly handled, and avoids influencing subsequent technique；
It after production technology after feedback runs one end time, repeats the above steps again, to realize to production technology
Adjustment in time reduces production cost to improve the yields of product.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (10)
1. a kind of off line detection method of crystal column surface particle, which comprises the following steps:
Step S1, a unproductive wafer in offline state, is provided, the shape in the semiconductor substrate of the unproductive wafer
At a film layer, the film layer covers the upper surface of the semiconductor substrate；
Step S2, normal production technology is simulated, a plurality of particles are scattered in the upper surface of the film layer；
Step S3, the film layer is etched, forms a plurality of pyramidal structures, the upper surface of each pyramidal structure is covered with one
The particle；
Step S4, the pyramidal structure handled through step S3 is detected, obtains the electric signal of the pyramidal structure；
Particle position on the semiconductor substrate, described each is calculated according to the electric signal in step S5
The size of grain and the quantity of the particle；
Step S6, according to step S5's as a result, being improved to normal production technology.
2. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that the semiconductor substrate
For silicon substrate.
3. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that the thickness of the film layer
For
4. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that the thickness of the film layer
Ratio with the thickness of the semiconductor substrate is 0.1:1~2:1.
5. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that the pyramidal structure is
Trapezoidal rotary table, the internal diameter of the upper surface of the pyramidal structure are less than the internal diameter of the lower surface of the pyramidal structure.
6. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that in the step S3
In, the etching is dry etching.
7. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that further include:
Step S7, the unproductive wafer after step S4 detection is handled, removes the particle and the film layer.
8. the off line detection method of crystal column surface particle according to claim 7, which is characterized in that remove the particle and
The method of the film layer is chemical mechanical grinding.
9. the off line detection method of crystal column surface particle according to claim 7, which is characterized in that further include:
Step S8, to treated that the unproductive wafer cleans through step S7, the unproductive wafer is recycled.
10. the off line detection method of crystal column surface particle according to claim 1, which is characterized in that in the step S3
In, after the completion of etching, remove the etch by-products of the film surface；Or
After the completion of etching, the etch by-products of the film surface are not removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811369318.1A CN109473370A (en) | 2018-11-16 | 2018-11-16 | A kind of off line detection method of crystal column surface particle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811369318.1A CN109473370A (en) | 2018-11-16 | 2018-11-16 | A kind of off line detection method of crystal column surface particle |
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| Publication Number | Publication Date |
|---|---|
| CN109473370A true CN109473370A (en) | 2019-03-15 |
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| CN201811369318.1A Pending CN109473370A (en) | 2018-11-16 | 2018-11-16 | A kind of off line detection method of crystal column surface particle |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759533A (en) * | 2011-04-27 | 2012-10-31 | 中国科学院微电子研究所 | Wafer inspection method and wafer inspection apparatus |
| CN102830048A (en) * | 2011-06-16 | 2012-12-19 | 中国科学院微电子研究所 | Wafer particle detection method |
| CN103489809A (en) * | 2013-09-22 | 2014-01-01 | 上海华力微电子有限公司 | Defect detection system for particles on surface of wafer and working method of defect detection system |
| CN103779252A (en) * | 2014-01-23 | 2014-05-07 | 江苏艾特曼电子科技有限公司 | On-line detection structure for particle pollution in wafer level bonding |
| CN104201129A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Method for monitoring particles in cleaning device |
| CN104766807A (en) * | 2014-01-06 | 2015-07-08 | 上海华虹宏力半导体制造有限公司 | Method of detecting micro particles of chemical vapor deposited thin film |
| CN107634006A (en) * | 2017-09-12 | 2018-01-26 | 武汉新芯集成电路制造有限公司 | The reworking method of wafer |
-
2018
- 2018-11-16 CN CN201811369318.1A patent/CN109473370A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759533A (en) * | 2011-04-27 | 2012-10-31 | 中国科学院微电子研究所 | Wafer inspection method and wafer inspection apparatus |
| CN102830048A (en) * | 2011-06-16 | 2012-12-19 | 中国科学院微电子研究所 | Wafer particle detection method |
| CN103489809A (en) * | 2013-09-22 | 2014-01-01 | 上海华力微电子有限公司 | Defect detection system for particles on surface of wafer and working method of defect detection system |
| CN104766807A (en) * | 2014-01-06 | 2015-07-08 | 上海华虹宏力半导体制造有限公司 | Method of detecting micro particles of chemical vapor deposited thin film |
| CN103779252A (en) * | 2014-01-23 | 2014-05-07 | 江苏艾特曼电子科技有限公司 | On-line detection structure for particle pollution in wafer level bonding |
| CN104201129A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Method for monitoring particles in cleaning device |
| CN107634006A (en) * | 2017-09-12 | 2018-01-26 | 武汉新芯集成电路制造有限公司 | The reworking method of wafer |
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Application publication date: 20190315 |
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