CN103779252A - On-line detection structure for particle pollution in wafer level bonding - Google Patents
On-line detection structure for particle pollution in wafer level bonding Download PDFInfo
- Publication number
- CN103779252A CN103779252A CN201410030779.1A CN201410030779A CN103779252A CN 103779252 A CN103779252 A CN 103779252A CN 201410030779 A CN201410030779 A CN 201410030779A CN 103779252 A CN103779252 A CN 103779252A
- Authority
- CN
- China
- Prior art keywords
- substrate
- wafer level
- particle contamination
- test electrode
- online detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses an on-line detection structure for particle pollution in wafer level bonding. The on-line detection structure for particle pollution in wafer level boning is structurally characterized by comprising a cover cap, a substrate, a bonding ring, test electrodes, a lead bonding pad and a cavity; the cavity is formed in the cover cap; the cover cap is integrally connected with the substrate through the bonding ring; the lead bonding pad adheres to the substrate and is located outside the cavity; the test electrodes adhere to the substrate and are located in the cavity, led out to the lead bonding pad and electrically connected with the lead bonding pad. According to the on-line detection structure for particle pollution in wafer level bonding, whether particle pollution exists in the bonding cavity or not and the position of particle pollution can be judged through the resistance value or the frequency response between the test electrodes.
Description
Technical field
The present invention relates to a kind of quality detection technology relating in Wafer-Level Packaging Technology, relate in particular to the online detection architecture of a kind of particle contamination for wafer level packaging.
Background technology
Encapsulation is a very important link in micro-manufacturing process, and Wafer-Level Packaging Technology microelectromechanical systems (Micro-Electro-Mechanical System just, MEMS) one of important encapsulation technology, because it can avoid the subsequent technique such as scribing and assembling to damage movable sensitive structure in MEMS chip effectively, improve the cleanliness factor of MEMS device inside, improve encapsulation rate of finished products and reliability simultaneously, reduce packaging cost.
The technology that realizes wafer level packaging focuses on the bonding of capping and substrate two disks.Wafer level bonding techniques, is that two wafer are interosculated, and surface atom is reacted to each other, and allows the bonded energy between surface reach certain intensity, thereby two disks can be became one.
Realizing wafer level bonding has several different methods, as melting bonding, thermocompression bonding, cryogenic vacuum bonding, anode linkage, eutectic bonding, and bonding agent bonding etc.No matter adopt which kind of bonding mode, because the factors such as bonding environment or process conditions are all likely introduced particle contamination at the chip area of required protection.These particle contaminations gently have influence on the reliability of device, heavy directly cause component failure.And device area is closed between two wafers and is difficult to direct-detection after bonding, it is the difficult point in bonding packaging technology now.
Summary of the invention
Main purpose of the present invention is to provide a kind of online detection architecture for wafer level bonding particle contamination, and to solve, in wafer scale bonding packaging technology, particle contamination cannot test problems.
The present invention for achieving the above object, adopts following technical scheme:
For an online detection architecture for wafer level bonding particle contamination, it is characterized in that: this structure comprises block, substrate, bonding ring, test electrode, lead pad and cavity; On described block, there is cavity; Described block and substrate are connected as a single entity by bonding ring; Described lead pad is attached on substrate, and is located at outside cavity; Described test electrode is attached on substrate, and is positioned among cavity, and leads to lead pad and be electrically connected with it.
It is further characterized in that: described test electrode is at least made up of two lead-in wires, and it is staggered or be annular concentric and be distributed in the region in substrate upper plenum that lead-in wire is comb teeth-shaped.
Further: the spacing between described test electrode is fixed, the spacing of test electrode matches with the minimum dimension of the particle contamination that detects.
Described lead pad and test electrode are same conducting metal or two kinds of different conductive metallic materials.
Described block and substrate are monocrystalline silicon, glass, quartz, carborundum, sapphire, plastic or other material, and bonding ring material is for being metal, alloy, glass or organic substance.
On described substrate, be attached with insulating barrier for by lead pad and test electrode and substrate electric isolation.
Described insulating barrier material includes but not limited to silicon dioxide, silicon nitride.
Described cap surface can have insulating barrier also can not have.
Online detection architecture for wafer level bonding particle contamination provided by the invention, can judge the position that whether exists particle contamination and particle contamination to occur in bonding chamber by the resistance value between test electrode or frequency response.
Accompanying drawing explanation
Fig. 1 is invention structural representation.
Fig. 2 is the first scheme that test electrode is arranged on substrate.
Fig. 3 is the first scheme that test electrode is arranged on substrate.
Embodiment
For an online detection architecture for wafer level bonding particle contamination, this structure comprises block 1, substrate 2, bonding ring 7, test electrode 3, lead pad 5 and cavity 4 as shown in Figure 1; On described block 1, there is cavity 4; Described block 1 is connected as a single entity by bonding ring 7 with substrate 2; Described lead pad 5 is attached on substrate 2, and is located at outside cavity 4; Described test electrode 3 is attached on substrate 2, and is positioned among cavity 4, and leads to lead pad 5 and be electrically connected with it.
As shown in Figure 2,3, described test electrode 3 is at least made up of two lead-in wires, and it is staggered or be annular concentric and be distributed in the region in substrate upper plenum that lead-in wire is comb teeth-shaped.Spacing between described test electrode is fixed, and the spacing of test electrode matches with the minimum dimension of the particle contamination that detects.
Described lead pad 5 and test electrode 3 can be same conducting metal or two kinds of different conductive metallic materials.
Described block 1 is monocrystalline silicon, glass, quartz, carborundum, sapphire, plastic or other material with substrate 2, and described bonding ring material is metal, alloy, glass or organic substance.
On described substrate 2, be attached with insulating barrier 6 for by lead pad 5 and test electrode 3 and substrate 2 electric isolation.
Described insulating barrier 6 materials include but not limited to silicon dioxide, silicon nitride.
Described block 1 surface can have insulating barrier also can not have.
The working method of described detection architecture is: test the resistance value between two lead pad and the impedance under high frequency in same cavity, owing to not being connected mutually and interval constant spacing between test electrode, therefore in the situation that there is no particle contamination between two test electrodes D.C. resistance and high-frequency ac impedance all very large, the spacing distance between concrete numerical value and test electrode is relevant.In the time having conductive particle to drop between two test electrodes, can cause D.C. resistance significantly to reduce, in the time having non-conductive particle to drop between two test electrodes, can cause high-frequency ac impedance significantly to reduce.This test structure can test out all particle contaminations that particle size is greater than test electrode spacing distance.
Claims (8)
1. for an online detection architecture for wafer level bonding particle contamination, it is characterized in that: this structure comprises block, substrate, bonding ring, test electrode, lead pad and cavity; On described block, there is cavity; Described block and substrate are connected as a single entity by bonding ring; Described lead pad is attached on substrate, and is located at outside cavity; Described test electrode is attached on substrate, and is positioned among cavity, and leads to lead pad and be electrically connected with it.
2. the online detection architecture for wafer level bonding particle contamination according to claim 1, is characterized in that: described test electrode is at least made up of two lead-in wires, and it is staggered or be annular concentric and be distributed in the region in substrate upper plenum that lead-in wire is comb teeth-shaped.
3. the online detection architecture for wafer level bonding particle contamination according to claim 2, is characterized in that: the spacing between described test electrode is fixed, and the spacing of test electrode matches with the minimum dimension of the particle contamination that detects.
4. according to the online detection architecture for wafer level bonding particle contamination described in claim 2 or 3, it is characterized in that: described lead pad and test electrode are same conducting metal or two kinds of different conductive metallic materials.
5. according to the online detection architecture for wafer level bonding particle contamination described in claim 1-3 any one, it is characterized in that: described block and substrate are the material that comprises monocrystalline silicon, glass, quartz, carborundum, sapphire, plastics, bonding ring material is metal, alloy, glass or organic substance.
6. according to the online detection architecture for wafer level bonding particle contamination described in claim 1-3 any one, it is characterized in that: on described substrate, be attached with insulating barrier for by lead pad and test electrode and substrate electric isolation.
7. the online detection architecture for wafer level bonding particle contamination according to claim 6, is characterized in that: described insulating barrier material includes but not limited to silicon dioxide, silicon nitride.
8. according to the online detection architecture for wafer level bonding particle contamination described in claim 1-3 any one, it is characterized in that: described cap surface has insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030779.1A CN103779252B (en) | 2014-01-23 | 2014-01-23 | A kind of online detection architecture for wafer level bonding particle contamination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030779.1A CN103779252B (en) | 2014-01-23 | 2014-01-23 | A kind of online detection architecture for wafer level bonding particle contamination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103779252A true CN103779252A (en) | 2014-05-07 |
| CN103779252B CN103779252B (en) | 2016-05-04 |
Family
ID=50571360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410030779.1A Active CN103779252B (en) | 2014-01-23 | 2014-01-23 | A kind of online detection architecture for wafer level bonding particle contamination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779252B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022053A (en) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | Detection equipment of vacuum chamber for film formation and vacuum chamber detection method |
| CN107814352A (en) * | 2017-11-03 | 2018-03-20 | 苏州希美微纳系统有限公司 | Wet etching packaging structure and its dicing method applied to RF MEMS |
| CN108335989A (en) * | 2018-01-29 | 2018-07-27 | 京东方科技集团股份有限公司 | Metal fragment detection device and metal mask version carrying device |
| CN109473370A (en) * | 2018-11-16 | 2019-03-15 | 上海华力微电子有限公司 | A kind of off line detection method of crystal column surface particle |
| CN109994391A (en) * | 2017-11-09 | 2019-07-09 | 先进科技新加坡有限公司 | The detection of foreign particle in wire bonding process |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101417785A (en) * | 2007-10-24 | 2009-04-29 | 佳世达科技股份有限公司 | Wafer-level sensing element packaging structure and method for producing the same |
| TW200934722A (en) * | 2007-10-10 | 2009-08-16 | Bosch Gmbh Robert | Composite comprising at least two semiconductor substrates and production method |
| CN101746706A (en) * | 2009-10-16 | 2010-06-23 | 华中科技大学 | Micro-electromechanical system (MEMS) wafer-level vacuum packaging transverse interconnection structure and manufacture method thereof |
| CN101941673A (en) * | 2010-09-10 | 2011-01-12 | 北京航天时代光电科技有限公司 | Micro electro mechanical system wafer-level vacuum packaging method |
| CN102079502A (en) * | 2010-12-03 | 2011-06-01 | 华东光电集成器件研究所 | MEMS (micro electro mechanical system) device and wafer-level vacuum packaging method thereof |
| CN102583219A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Vacuum package structure and vacuum packaging method for wafer-level MEMS (micro-electromechanical system) devices |
| CN102862947A (en) * | 2012-09-18 | 2013-01-09 | 华东光电集成器件研究所 | MEMS (micro-electromechanical systems) device and vacuum encapsulation method of wafer level thereof |
| CN103466541A (en) * | 2013-09-12 | 2013-12-25 | 上海矽睿科技有限公司 | Wafer level packaging method and wafer |
| CN103523745A (en) * | 2013-10-21 | 2014-01-22 | 安徽北方芯动联科微系统技术有限公司 | Si conductive post based wafer-level packaging method and monolithic integrated MEMS (Micro Electro Mechanical System) chip for same |
-
2014
- 2014-01-23 CN CN201410030779.1A patent/CN103779252B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200934722A (en) * | 2007-10-10 | 2009-08-16 | Bosch Gmbh Robert | Composite comprising at least two semiconductor substrates and production method |
| CN101417785A (en) * | 2007-10-24 | 2009-04-29 | 佳世达科技股份有限公司 | Wafer-level sensing element packaging structure and method for producing the same |
| CN101746706A (en) * | 2009-10-16 | 2010-06-23 | 华中科技大学 | Micro-electromechanical system (MEMS) wafer-level vacuum packaging transverse interconnection structure and manufacture method thereof |
| CN101941673A (en) * | 2010-09-10 | 2011-01-12 | 北京航天时代光电科技有限公司 | Micro electro mechanical system wafer-level vacuum packaging method |
| CN102079502A (en) * | 2010-12-03 | 2011-06-01 | 华东光电集成器件研究所 | MEMS (micro electro mechanical system) device and wafer-level vacuum packaging method thereof |
| CN102583219A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Vacuum package structure and vacuum packaging method for wafer-level MEMS (micro-electromechanical system) devices |
| CN102862947A (en) * | 2012-09-18 | 2013-01-09 | 华东光电集成器件研究所 | MEMS (micro-electromechanical systems) device and vacuum encapsulation method of wafer level thereof |
| CN103466541A (en) * | 2013-09-12 | 2013-12-25 | 上海矽睿科技有限公司 | Wafer level packaging method and wafer |
| CN103523745A (en) * | 2013-10-21 | 2014-01-22 | 安徽北方芯动联科微系统技术有限公司 | Si conductive post based wafer-level packaging method and monolithic integrated MEMS (Micro Electro Mechanical System) chip for same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022053A (en) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | Detection equipment of vacuum chamber for film formation and vacuum chamber detection method |
| CN104022053B (en) * | 2014-05-20 | 2017-11-14 | 京东方科技集团股份有限公司 | A kind of vacuum chamber detection device and vacuum chamber detection method for film forming |
| CN107814352A (en) * | 2017-11-03 | 2018-03-20 | 苏州希美微纳系统有限公司 | Wet etching packaging structure and its dicing method applied to RF MEMS |
| CN109994391A (en) * | 2017-11-09 | 2019-07-09 | 先进科技新加坡有限公司 | The detection of foreign particle in wire bonding process |
| CN108335989A (en) * | 2018-01-29 | 2018-07-27 | 京东方科技集团股份有限公司 | Metal fragment detection device and metal mask version carrying device |
| CN109473370A (en) * | 2018-11-16 | 2019-03-15 | 上海华力微电子有限公司 | A kind of off line detection method of crystal column surface particle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103779252B (en) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103779252B (en) | A kind of online detection architecture for wafer level bonding particle contamination | |
| CN102593094B (en) | Wafer encapsulation body and forming method thereof | |
| CN106660782B (en) | Aggregation formula CMOS and MEMS sensor production method and structure | |
| CN107748230B (en) | Gas sensor apparatus with frame passageways and related methods | |
| JP2002246489A (en) | Wafer level hermetic sealing method | |
| US20170133289A1 (en) | Semiconductor chip | |
| CN101941673B (en) | Micro electro mechanical system wafer-level vacuum packaging method | |
| CN102583219A (en) | Vacuum package structure and vacuum packaging method for wafer-level MEMS (micro-electromechanical system) devices | |
| CN102565680B (en) | The failure analysis method of semiconductor device | |
| US10330539B2 (en) | High precision high reliability and quick response thermosensitive chip and manufacturing method thereof | |
| US10020285B2 (en) | Method of producing a semiconductor device and a semiconductor device | |
| CN104062463B (en) | Piezoresistive acceleration sensor and manufacturing method thereof | |
| CN103466541A (en) | Wafer level packaging method and wafer | |
| CN102656673B (en) | Electrical coupling of wafer structures | |
| CN109095434A (en) | Structural member of sensor and its manufacturing method | |
| CN103434998A (en) | Test structure and test method of wafer level airtightness | |
| CN105706215A (en) | Production method for semiconductor element, and semiconductor element | |
| CN104880657A (en) | IGBT device fault detection method and corresponding detection circuit | |
| US20170110437A1 (en) | Wire bond cleaning method and wire bonding recovery process | |
| CN103543337B (en) | Capacity measurement device and method for capacity measurement component | |
| CN104037107A (en) | Failure analysis method for through hole chain structure | |
| US9890037B2 (en) | Physical quantity sensor | |
| US10062611B2 (en) | Encapsulated semiconductor package and method of manufacturing thereof | |
| CN107680922B (en) | Wafer acceptance test system and method for improving heat utilization efficiency thereof | |
| CN104355285A (en) | Vacuum encapsulation structure of MEMS component and manufacture method of vacuum encapsulation structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |