CN109470652A - Oval airport partial etching type photonic crystal sensors based on Fano resonance - Google Patents
Oval airport partial etching type photonic crystal sensors based on Fano resonance Download PDFInfo
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- CN109470652A CN109470652A CN201811244602.6A CN201811244602A CN109470652A CN 109470652 A CN109470652 A CN 109470652A CN 201811244602 A CN201811244602 A CN 201811244602A CN 109470652 A CN109470652 A CN 109470652A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
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Abstract
The oval airport partial etching type two dimensional photonic crystal sensor design for silicon nitride (SiNx) the material production based on Fano resonance that the present invention relates to a kind of, belongs to photonic crystal sensors technical field.The present invention carries out structural improvement on the basis of conventional elliptical airport full etching type two-dimensional photon crystal structure to improve the performance of sensor.Specifically, the air porosity that oval airport is penetrated entirely is the partial penetration structure of partial depth etching, by adjusting light source incidence direction from parallel with photonic crystal plate to vertical, to realize the raising to quality factor and sensitivity.The size of the photonic crystal sensors is more flexible, can be adjusted production according to actual needs.And the design uses silicon nitride as structural material, improves structural strength, the manufacture craft of partial etching decreases etching agent usage amount and avoids pollution.The present invention can be used for the refractive index sensing field under liquid environment.
Description
Technical field
The oval airport partial etching type two dimensional photonic crystal sensor based on Fano resonance that the present invention relates to a kind of,
Feature is that sensing capabilities are excellent, and size is flexible, belongs to photonic crystal sensors technical field.
Background technique
In recent years, it is asked to solve high cost and sophisticated functionsization reaction for modifying target molecule in label detection etc.
Topic, photonic crystal have received widespread attention without label sensor.However, traditional photonic crystal sensors (document 1:
Yonghao Liu,Shuling Wang,Deyin Zhao,Weidong Zhou,and Yuze Sun,“High quality
factor photonic crystal filter at k≈0and its application for refractive
index sensing",Optics Express 25(9),10536-10545(2017)；Document 2:Fujun Sun, Jian
Zhou,Lijun Huang,Zhongyuan Fu,Zhaoxiang Ding,and Huiping Tian,“Design on-chip
width-modulated line-defect cavity array structure for multiplexing complex
refractive index sensing",Sensors and Actuators A:Physical 257,8-14(2017)；Text
3:Jian Zhou, Lijun Huang, Zhongyuan Fu, Fujun Sun, and Huiping Tian are offered,
“Multiplexed simultaneous high sensitivity sensors with high-order mode based
on the integration of photonic crystal 1×3beam splitter and three different
single-slot PCNCs",Sensors 16(7),1050(2016)；Document 4:Han Su, Xin R.Cheng, Tatsuro
Endo,and Kagan Kerman,“Photonic crystals on copolymer film for label-free
detection of DNA hybridization”,Biosensors and Bioelectronics103,158-162
(2018)) there is limitation in terms of strong interaction of laser with material.For Application in Sensing, Ying Tigao sensitivity.In order into one
Step improves the intensity of light object interaction, sub-wavelength grate structure (document 5:Stanley M.Lo, Shuren Hu, Girija
Gaur,Yiorgos Kostoulas,Sharon M.Weiss,and Philippe M.Fauchet,“Photonic
crystal microring resonator for label-free biosensing”,Optical Express 25(6),
7046-7054(2017)；Document 6:Enxiao Luana, Han Yuna, Loic Laplatinea, Jonas
Flueckigerb,Yonathan Dattnerc,Daniel Ratnerd,Karen Cheunga,and Lukas
Chrostowski,“Sub-wavelength multi-box waveguide-based label-free sensors”,
Proc.of SPIE 10535,105350H-1(2017)；Document 7:Zhengrui Tu, Dingshan Gao, Meiling
Zhang,and Daming Zhang,“High-sensitivity complex refractive index sensing
based on Fano resonance in the subwavelength grating waveguide micro-ring
Resonator ", Optics Express 25 (17), 20911-20922 (2017)) it is gradually paid close attention in recent years.However,
For designing and manufacturing, have the sub-wavelength grate structure for the micro-loop for being coupled to waveguide more more complicated than photonic crystal sensors.
Comprehensively consider design and manufacture and high optical characteristics, we have proposed a kind of oval airport partial etching based on Fano resonance
Type two dimensional photonic crystal sensor, class TE refractive index sensitivity can achieve 582.5nm/RIU, and class TM refractive index sensitivity can
To reach 930.5nm/RIU.
Summary of the invention
Etching depth and light source incidence direction of the present invention by adjusting oval airport reach the effect for improving sensitivity
Fruit, and propose a kind of two dimensional photonic crystal sensor based on Fano resonance.
1. particular content of the invention
For the sensing characteristics of photonic crystal sensors, it is desirable to which quality factor is sufficiently large, and sensitivity is sufficiently high.
(1) a kind of two dimensional photonic crystal sensor of oval airport etching depth of the adjustment based on Fano resonance is devised
Structure, specific structure are as shown in Figure 1.
(2) photon crystal structure for devising airport partial etching, compared to the photon crystal structure of traditional full etching,
The line width of resonance peak is substantially reduced, and transmission plot comparison is as shown in Figure 2.
(3) parameters optimization (lattice constant, ellipse long and short shaft, plate thickness, air hole depth etc.) is eventually passed through, it is final true
Fixed structure as shown in Figure 1, parameter are as follows: a=1000nm, rmajor=400nm, rminor=250nm, t=160nm, h=80nm.
2. advantages of the present invention is as follows:
(1) present invention proposes to devise two dimensional photonic crystal sensor structure by adjusting oval airport etching depth,
Two modes of resonance are generated, class TE and class TM mode are respectively corresponded.The field distribution of these modes be located in hole and plate outside,
It can be used for detecting different determinands.
(2) present invention proposes perfect photon crystal structure, can achieve the purpose for reducing manufacture difficulty.
(3) structure of design air bore portion etching of the present invention, is conducive to determinand retaining in hole, to enhance light
Object interaction.
(4) structure size of the invention is more flexible, and lattice week can be arbitrarily adjusted after forming photon crystal structure
Issue is to meet actual requirement.
(5) the more similar photonic crystal sensors of the present invention improve sensitivity, while can detecte the range of mode more
Extensively.
3. the principle of the present invention is as follows:
(1) in light source vertical incidence, after introducing perfect photon crystal structure in uniform dielectric plate, board memory is being led
Mould and guided mode resonance both of which.Wherein, only guided mode resonance can be with incident optical coupling, thus the space near dielectric-slab
Form field distribution.
(2) Fano resonance refers to the coupling between continuous state and discrete state, and vertical incidence light source is continuous state in the present invention,
The guided mode resonance formed in plate is discrete state, and therebetween after coupling, the phase that will lead to incident light changes, thus
Form Fano resonance.
(3) present invention adjusts guided mode resonance by adjusting oval airport major and minor axis ratio and airport etching depth
Coupling between incident light ultimately forms the Fano resonance of class TE Yu class TM, while the electric field of two resonance can be distributed in
Different spatial positions.
Detailed description of the invention
Oval airport partial etching type two dimensional photonic crystal sensor structure chart of the Fig. 1 (a) based on Fano resonance.(b)
Photonic crystal lattice schematic diagram, wherein lattice constant a=1000nm, oval airport long axis rmajor=400nm, oval airport
Short axle rminor=250nm.(c) photon crystal structure plate side view, wherein plate thickness t=160nm, airport etching depth h=
80nm。
Fig. 2 airport etching depth is respectively that (conventional air hole is complete by 80nm (depth of partial etching of the present invention) and 160nm
Portion etching depth) transmitted spectrum comparison diagram.
Resonance of the photonic crystal sensors under class TE mode different refractivity is calculated using FDTD method in Fig. 3 (a)
Transmission plot.(b) distribution map of the electric field of 2 D photon crystal class TE mode.(c) relationship of class TE resonance wavelength and variations in refractive index
Fitted figure.
Resonance of the photonic crystal sensors under class TM mode different refractivity is calculated using FDTD method in Fig. 4 (a)
Transmission plot.(b) distribution map of the electric field of 2 D photon crystal class TM mode.(c) relationship of class TM resonance wavelength and variations in refractive index
Fitted figure.
Specific embodiment
To be more clear the object, technical solutions and advantages of the present invention, below in conjunction with attached drawing, to the specific knot of invention
Structure, principle and sensing characteristics are described further.
The 2 D photon crystal for the oval airport partial etching type based on Fano resonance that the invention proposes a kind of senses
Device, structural schematic diagram are as shown in Figure 1.Wherein shown in such as Fig. 1 (b) of lattice parameter part, lattice constant a=1000nm is oval
Airport long axis rmajor=400nm, oval airport short axle rminor=250nm.The present invention is deep by the etching for adjusting airport
It spends to improve the performance indicator of sensor, shown in sensor side view such as Fig. 1 (c), plate thickness t=160nm, airport etching depth
H=80nm.
Fig. 2 compared adjusting the later transmissions etched away with conventionally whole after medium of airport etching depth
As a result.The line width of resonance peak can be significantly reduced after etching depth changes into 80nm in design method according to the invention,
To obtain higher quality factor.Resonance peak quality factor of the invention is respectively as follows: class TM resonance peak 7300, class TE resonance peak
1200。
Fig. 3 (a), which gives, is calculated photonic crystal sensors under class TE mode different refractivity using FDTD method
Resonance transmission plot.When refractive index becomes larger, the resonance peak gradually red shift of class TE mode.Fig. 3 (b) gives class TE mode
Resonance peak distribution map of the electric field, field center are distributed in the space in airport and right above airport.Fig. 3 (c) gives class TE
The relationship fitted figure of mode resonances wavelength and variations in refractive index.It is computed, the refractive index sensitivity at class TE mode resonances peak is
582.5nm/RIU。
Fig. 4 (a), which gives, is calculated photonic crystal sensors under class TM mode different refractivity using FDTD method
Resonance transmission plot.When refractive index becomes larger, the resonance peak gradually red shift of class TM mode.Fig. 4 (b) gives class TM mode
Resonance peak distribution map of the electric field, field center are distributed in the space of two upper side of airport.Fig. 4 (c) gives class TM mode resonances
The relationship fitted figure of wavelength and variations in refractive index.It is computed, the refractive index sensitivity at class TM mode resonances peak is 930.5nm/
RIU。
Claims (3)
1. proposing a kind of two dimensional photonic crystal sensor structure of oval airport partial etching based on Fano resonance, feature
Be: the sensor production material is selected as silicon nitride, by adjusting oval airport etching depth, so that light field center local
In airport hole and neighbouring space.Wherein photonic crystal plate plate thickness 160nm, the etching depth of airport are the half of plate thickness,
That is 80nm.At this point, both of which, respectively class TE will be inspired in photonic crystal plate under the irradiation of vertical plane wave source
Mould and class TM mould.Wherein the light field center local of class TE mould is in the positive upper and lower of airport, and the light field center local of class TM mould is in light
The positive upper and lower of sub- crystal slab.
2. method according to claim 1 realizes the two dimension of the oval airport partial etching based on Fano resonance
Photonic crystal sensors structure.It is characterized in that improving the quality factor and sensitivity index of full impregnated emitting structure.The structure
It is placed in liquid environment, the both of which inspired shows different sensibility to the variations in refractive index of ambient enviroment respectively.
Wherein the sensitivity of class TE mode is 582.5nm/RIU, and class TM mode sensitivity is 930.5nm/RIU.
3. according to claim 1, described in 2, which can be used for the refractive index detection of liquid environment, and due to silicon nitride object
Physicochemical property is relatively stable, is adapted to certain mal-condition.
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| CN201811244602.6A CN109470652A (en) | 2018-10-24 | 2018-10-24 | Oval airport partial etching type photonic crystal sensors based on Fano resonance |
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| CN201811244602.6A CN109470652A (en) | 2018-10-24 | 2018-10-24 | Oval airport partial etching type photonic crystal sensors based on Fano resonance |
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Citations (6)
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|---|---|---|---|---|
| WO2010044274A1 (en) * | 2008-10-17 | 2010-04-22 | 国立大学法人東京工業大学 | Optical sensor, method for manufacturing same and detection method using optical sensor |
| CN102530821A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Suspending resonant photonic device based on silicon substrate nitride material and preparation method for same |
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| CN106461559A (en) * | 2014-03-24 | 2017-02-22 | 仪器实验室公司 | Bioassay system and method for detecting analytes in body fluids |
| CN108732652A (en) * | 2018-05-25 | 2018-11-02 | 厦门大学 | A kind of nitride photonic crystal and preparation method thereof |
-
2018
- 2018-10-24 CN CN201811244602.6A patent/CN109470652A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010044274A1 (en) * | 2008-10-17 | 2010-04-22 | 国立大学法人東京工業大学 | Optical sensor, method for manufacturing same and detection method using optical sensor |
| CN102530821A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Suspending resonant photonic device based on silicon substrate nitride material and preparation method for same |
| CN105044029A (en) * | 2012-02-07 | 2015-11-11 | 中国科学院微电子研究所 | Sensor based on guided wave resonance and sensor test system |
| CN106461559A (en) * | 2014-03-24 | 2017-02-22 | 仪器实验室公司 | Bioassay system and method for detecting analytes in body fluids |
| CN105606567A (en) * | 2015-12-04 | 2016-05-25 | 北京邮电大学 | Low-refractive-index-mode one-dimensional photonic crystal nanobeam cavity biosensor structure based on gradual change of elliptical holes |
| CN108732652A (en) * | 2018-05-25 | 2018-11-02 | 厦门大学 | A kind of nitride photonic crystal and preparation method thereof |
Non-Patent Citations (3)
| Title |
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| COSTA NICOLAOU等: "Enhanced detection limit by dark mode perturbation in 2D photonic crystal slab refractive index sensors", 《OPTICS EXPRESS》 * |
| MOHAMED EL BEHEIRY: "Sensitivity enhancement in photonic crystal slab biosensors", 《OPTICS EXPRESS》 * |
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Application publication date: 20190315 |