CN109470377B - Temperature distribution testing method of multilayer resistive random access memory - Google Patents
Temperature distribution testing method of multilayer resistive random access memory Download PDFInfo
- Publication number
- CN109470377B CN109470377B CN201811344613.1A CN201811344613A CN109470377B CN 109470377 B CN109470377 B CN 109470377B CN 201811344613 A CN201811344613 A CN 201811344613A CN 109470377 B CN109470377 B CN 109470377B
- Authority
- CN
- China
- Prior art keywords
- target
- unit
- random access
- access memory
- temperature distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
Abstract
The invention discloses a temperature distribution testing method of a multilayer resistive random access memory, which comprises the following steps: acquiring the number of stacked layers of the resistive random access memory; setting a test sequence of a target layer; selecting a target layer according to the test sequence; selecting a plurality of target units on a target layer to form a target set; initializing each target unit in the target set by using a pulse signal, and setting each target unit in the target set to be in a high-resistance state or a low-resistance state; respectively recording the initial resistance value of each target unit in the target set; repeating the steps for each layer of the resistive random access memory; and measuring the temperature distribution of each layer of the resistive random access memory, and constructing a temperature distribution model of each layer. The invention can effectively infer the temperature distribution of the internal layer of the memory and improve the reliability of temperature distribution analysis.
Description
Technical Field
The invention relates to the technical field of electronic device testing, in particular to a temperature distribution testing method of a multilayer resistive random access memory.
Background
As the amount of data increases dramatically, the demand for data processing capacity increases, and processor bandwidth becomes a major bottleneck limiting processing capacity. In order to increase the capacity of information storage and increase the speed of information processing, a large-scale, high-speed nonvolatile memory has been studied.
Due to the problems of slow storage speed, low storage capacity, poor process compatibility and the like of the traditional Flash device, a novel memory structure is urgently required to be developed and applied. The resistive random access memory has the advantages of simple structure, high storage speed and the like, and becomes the most potential nonvolatile memory of the next generation. The resistive random access memory adopts a sandwich structure and is composed of an upper electrode, a lower electrode and a resistive material layer. The resistance change of the resistive random access memory is realized by applying voltage, so that data writing is realized. With the increase of the requirement on the storage capacity, the resistive random access memory develops from a single-layer structure to a three-dimensional stacking direction. The storage capacity of the resistive random access memory can be multiplied by a three-dimensional stacking mode. However, the temperature of the internal resistive random access memory unit in the three-dimensional device cannot be diffused quickly due to the multilayer stacking, so that the temperature of the internal unit rises quickly, and the internal storage information of the resistive random access memory unit is changed due to high temperature, so that information loss is caused. Therefore, the analysis and detection of the temperature distribution of the interlayer nodes in the three-dimensional stacked resistive random access memory have important significance for the reliability analysis of the resistive random access memory.
At present, the temperature test of the resistive random access memory mainly adopts a traditional temperature test method, the surface temperature of the resistive random access memory is imaged through an infrared lens, the temperature distribution test of the resistive random access memory is realized by analyzing a temperature image, and because the temperature distribution of the surface can only be measured through direct measurement, in order to measure the internal temperature distribution condition, the upper layer memory is required to be ensured not to carry out reading and writing operation, and the temperature change is not generated. Reading and writing a resistive random access memory unit of a target layer, measuring the temperature change of the surface, and then reversely deducing the temperature distribution of the target layer by using a heat conduction equation
However, in the prior art, only the temperature distribution of the surface layer of the resistive random access memory can be measured and analyzed, the temperature distribution of the internal layer of the resistive random access memory cannot be directly measured and analyzed, the internal temperature distribution is solved through a thermal diffusion equation, the method is effective for a shallow three-dimensional memory, and for a memory with a large number of stacked layers, the error of the back-stepping internal temperature distribution is large due to the increase of the number of stacked layers, so that the internal temperature distribution cannot be accurately known.
Disclosure of Invention
The invention aims to provide a temperature distribution testing method of a multilayer resistive random access memory, which can effectively infer the temperature distribution of an internal layer of the memory and improve the reliability of temperature distribution analysis.
In order to achieve the above object, an aspect of the present invention provides a temperature distribution testing method of a multilayer resistive random access memory, including:
s1: acquiring the number of stacked layers of the resistive random access memory;
s2: setting a test sequence of a target layer;
s3: selecting a target layer according to the test sequence;
s4: selecting a plurality of target units on a target layer to form a target set;
s5: initializing each target unit in the target set by using a pulse signal, and setting each target unit in the target set to be in a high-resistance state or a low-resistance state;
s6: respectively recording the initial resistance value of each target unit in the target set;
s7: repeating steps S3 to S6 for each layer of the resistance change memory;
s8: and measuring the temperature distribution of each layer of the resistive random access memory, and constructing a temperature distribution model of each layer.
Preferably, step S8 includes the steps of,
s81: selecting a target layer;
s82: selecting a plurality of target units on a target layer;
s83: forming a target set by the selected multiple target units;
s84: performing read-write operation on each target unit in the target set, and acquiring temperature data of each target unit in the target set;
s85: forming a temperature data set by the temperature data of each target unit in the target set;
s86: and constructing a temperature distribution model of the target layer according to the temperature data set, the position coordinates of each target unit and the heat conduction equation.
Preferably, step S84 includes the steps of:
s841: selecting any target unit from the target set as a test unit;
s842: generating a row selection signal and a column selection signal according to the position of the test unit;
s843: reading and writing the test unit, and obtaining the current resistance value of the test unit in the reading and writing process;
s844: obtaining the temperature data of the current test unit according to the proportional relation between the current resistance value and the initial resistance value of the test unit;
s845: steps S841 to S844 are cyclically executed until temperature data of all target units in the target set is obtained.
Preferably, in step S841, the target unit is selected according to a fixed horizontal step size or vertical step size, starting from the edge unit of the target layer.
Preferably, in step S841, the target unit is selected at fixed distance intervals with the central unit of the target layer as a starting point.
Preferably, in step S841, the target unit is selected by taking the central unit point of the target layer as an initial point and selecting the target unit in increments according to the radius interval.
Preferably, in step 842, the position coordinates of the target unit in the two-dimensional plane are obtained through the row selection signal and the column selection signal.
Preferably, in step 843, the test unit is read and written with multiple tests to obtain the average resistance value of the current resistance of the test unit.
Preferably, in step 844, the initial temperature of the test unit at the initial resistance value is converted to read temperature data based on the ratio of the current resistance value to the initial resistance value of the test unit.
Preferably, in step S8, the temperature distribution model is any one of a normal distribution, an F distribution, and a T distribution.
The temperature distribution test method of the multilayer resistive random access memory provided by the invention takes the selected specific point as the reference point, and analyzes the change of the internal temperature of the multilayer resistive random access memory by testing the resistance change of the reference point, thereby effectively deducing the temperature distribution of the internal layer of the memory and improving the reliability of the temperature distribution analysis.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a flowchart of a temperature distribution testing method of a multilayer resistive random access memory according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a uniform distribution picking process;
FIG. 3 is a schematic illustration of an isometric mode selection process;
FIG. 4 is a schematic diagram of a spiral mode selection method;
FIG. 5 is a schematic diagram of a target layer unit temperature calculation using a temperature distribution model.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The invention provides a test method capable of analyzing the temperature distribution of an inner layer in a resistive random access memory array.
The principle behind this method is: the resistance of the resistive random access memory should be maintained when the resistive random access memory is not subjected to writing operation, but the resistance changes at different temperatures, the temperature of the resistive random access memory unit can be reversely deduced by measuring the resistance value of the resistive random access memory unit, namely, the resistive random access memory unit is selected through row selection and column selection, the resistance of the resistive random access memory unit is calculated by measuring the current and the voltage flowing through the resistive random access memory unit, and the measured resistance is compared with the initial resistance, so that the temperature change of the resistive random access memory unit is deduced.
Referring to fig. 1 to 5, in an embodiment, the present invention provides a method for testing a temperature distribution of a multi-layer resistive random access memory, the method comprising:
s1: and acquiring the stacking layer number of the resistive random access memory.
S2: the test sequence of the target layer is set, the test efficiency can be improved by setting the test sequence, the situations of repetition and test missing in the test process are avoided, and the test precision and accuracy are ensured.
S3: the target layer is selected according to the test sequence, the target layer is in a three-dimensional array structure, the target layer needs to be pertinently carried out in the test process, and the target of temperature distribution is determined by selecting the target layer, so that the precision of the temperature distribution test of the resistive random access memory is higher.
S4: selecting a plurality of target units on a target layer to form a target set;
s5: initializing each target unit in the target set by using a pulse signal, setting a high-resistance state or a low-resistance state for each target unit in the target set according to a selected mode, specifically, setting the target resistance state, selecting part of target units in the target set as the high-resistance state, selecting part of target units as the low-resistance state, and then performing initialization operation.
S6: respectively recording the initial resistance value of each target unit in the target set;
s7: and repeating the steps S3 to S6 for other layers of the resistive random access memory, wherein the initial resistance value of each target unit in the target set can be obtained through the operation, so that a data base is provided for subsequent calculation.
S8: and measuring the temperature distribution of each layer of the resistive random access memory, and constructing a temperature distribution model of each layer. Specifically, the temperature distribution measurement of the target layer includes the following steps:
s81: selecting a target layer for temperature distribution measurement;
s82: selecting a plurality of target units on a target layer, wherein the target unit selection can be carried out by three methods: a uniform distribution selection method (as shown in fig. 2), that is, taking the edge unit of the target layer as a starting point, selecting the target unit according to a fixed horizontal step length or vertical step length until the selected target unit is uniformly distributed on the target layer, wherein the uniform distribution selection method is simple in recording, and the target unit can be selected by recording the starting position and the spacing unit; a honeycomb mode selection method (as shown in fig. 3), namely, taking a central unit of a target layer as a starting point, selecting target units at fixed distance intervals until the selected target units are uniformly distributed on the target layer, wherein the honeycomb mode selection method can ensure that the distances between target points are the same, so that the distribution balance of target test points is improved, and the test precision is improved; the spiral line mode selection method (as shown in fig. 3) selects the target unit by taking the middle unit point of the target layer plane as the initial point, selecting the increasing radius interval and adopting the spiral line mode to select the target unit, realizes that the central temperature distribution has more centralized measuring points and the peripheral temperature distribution has less measuring points, realizes the monitoring of the heavy point area by adopting the changing step length, and reduces the number of the target units on the whole.
S83: forming a target set G by the selected target units, wherein the number of the target units is M (M is more than 1);
s84: and performing read-write operation on each target unit in the target set, and acquiring temperature data of each target unit in the target set. Specifically, any target unit k is selected from the target set as a test unit; generating a row selection signal and a column selection signal according to the position of the test unit, and obtaining the position coordinate of the target unit in the two-dimensional plane through the row selection signal and the column selection signal; reading and writing the test unit, and obtaining the current resistance RF of the test unit in the reading and writing processkMeasuring the reading voltage and the reading current of the test unit for multiple times, and obtaining the average resistance value of the current resistor of the test unit through calculation; according to the current resistance value RF of the test unitkAnd initial resistance value RIkObtaining the temperature data T of the current test unitkConverting the initial temperature of the test unit at the initial resistance value by using the proportional relation according to the proportional relation formed by the current resistance value and the initial resistance value of the test unit to obtain temperature data T of the test unit during readingk(ii) a And circulating the steps until all the target units in the target set G are finished.
S85: forming temperature data of each target unit in the target set into a temperature data set { T }1，T2，T3，……，TM}。
S86：From the temperature data set { T }1，T2，T3，……，TMAnd constructing a temperature distribution model of the target layer by using the position coordinates of each target unit and a heat conduction equation, wherein the temperature distribution model is any one of normal distribution, F distribution, T distribution or other distribution models.
The temperature of each unit in the target layer can be calculated according to the temperature distribution model, which is described in detail by way of example below:
because the resistive random access memory can be considered as a uniform conductor, the resistive random access memory is isotropic and has a three-dimensional heat conduction formula:
wherein: a is2＝k/Cρ f(x，y，z，t)＝f0/C
k, C, ρ are constants.
Considering only the two-dimensional plane case, the above formula can be simplified as:
because the heating unit of the resistive random access memory is smaller and the heating time is shorter, the resistive random access memory can be considered to be quickly diffused after heat is produced, namely the heat distribution is more uniform, and the target layer of the resistive random access memory can be regarded as a plane with uniformly distributed heat so as to obtain a measured temperature data set { T }1，T2，T3，……，TMAnd (6) taking the position coordinates of each target unit as a boundary condition in the heat conduction equation, thereby calculating the temperature of each unit.
Taking the uniform distribution selection method as an example, taking the calculation and analysis of a single target layer, when the temperature set { T } of the target unit is obtained1，T2，T3，……，TMAnd the position coordinates of the target units, as shown in FIG. 5, the black unit is the selected target unit, and the black diagonal unit is the unit temperature to be calculatedAnd the coordinates are (x, y). Assume that the temperature of the (1, 1) coordinate is T1The unit temperature of (1, 9) is T2The temperature of the (9, 1) coordinate is T3The unit temperature of (9, 9) is T4. According to the uniform temperature change, the target unit temperature can be obtained through a uniform distribution formula as follows:
by substituting the black diagonal cell coordinates (4, 5) in the figure, the cell temperature at coordinates (x, y) can be calculated. The temperature characteristics of all the units can be calculated by the method, so that the temperature distribution of the two-dimensional plane is obtained.
Compared with the prior art, the temperature distribution testing method of the resistive random access memory has the beneficial effects that: the change of the internal temperature of the three-dimensional resistive random access memory is analyzed by testing the resistance change of the reference point by taking the selected specific point as the reference point, so that the temperature distribution of the internal layer of the memory is effectively inferred, and the reliability of the temperature distribution analysis is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A temperature distribution testing method of a multilayer resistive random access memory is characterized by comprising the following steps:
s1: acquiring the number of stacked layers of the resistive random access memory;
s2: setting a test sequence of a target layer;
s3: selecting a target layer according to the test sequence;
s4: selecting a plurality of target units on a target layer to form a target set;
s5: initializing each target unit in the target set by using a pulse signal, and setting each target unit in the target set to be in a high-resistance state or a low-resistance state;
s6: respectively recording the initial resistance value of each target unit in the target set;
s7: repeating steps S3 to S6 for each layer of the resistance change memory;
s8: measuring the temperature distribution of each layer of the resistive random access memory, constructing a temperature distribution model of each layer,
wherein, the step S8 includes the following steps,
s81: selecting a target layer;
s82: selecting a plurality of target units on a target layer;
s83: forming a target set by the selected multiple target units;
s84: performing read-write operation on each target unit in the target set, and acquiring temperature data of each target unit in the target set;
s85: forming a temperature data set by the temperature data of each target unit in the target set;
s86: and constructing a temperature distribution model of the target layer according to the temperature data set, the position coordinates of each target unit and the heat conduction equation.
2. The temperature distribution testing method of the multilayer resistive random access memory according to claim 1, wherein the step S84 comprises the steps of:
s841: selecting any target unit from the target set as a test unit;
s842: generating a row selection signal and a column selection signal according to the position of the test unit;
s843: reading and writing the test unit, and obtaining the current resistance value of the test unit in the reading and writing process;
s844: obtaining the temperature data of the current test unit according to the proportional relation between the current resistance value and the initial resistance value of the test unit;
s845: steps S841 to S844 are cyclically executed until temperature data of all target units in the target set is obtained.
3. The method for testing the temperature distribution of the multilayer resistive random access memory according to claim 2, wherein in step S841, the target unit is selected according to a fixed horizontal step length or vertical step length, taking the edge unit of the target layer as a starting point.
4. The method for testing the temperature distribution of the multilayer resistive random access memory according to claim 2, wherein in step S841, the target unit is selected at regular distance intervals starting from the central unit of the target layer.
5. The method for testing the temperature distribution of the multilayer resistive random access memory according to claim 2, wherein in step S841, the target unit is selected by taking the central unit point of the target layer as an initial point and selecting the target unit incrementally according to the radius interval.
6. The method for testing the temperature distribution of the multilayer resistive random access memory according to any one of claims 2 to 5, wherein in step 842, the position coordinates of the target unit in the two-dimensional plane are obtained through the row selection signal and the column selection signal.
7. The method for testing the temperature distribution of the multilayer resistive random access memory according to any one of claims 2 to 5, wherein in step 843, the test unit is read and written for a plurality of times to obtain an average resistance value of the current resistance of the test unit.
8. The method for testing the temperature distribution of the multilayer resistive random access memory according to any one of claims 2 to 5, wherein in step 844, the initial temperature of the test unit at the initial resistance value is converted into the temperature data during reading according to the proportional relation between the current resistance value and the initial resistance value of the test unit.
9. The method for testing the temperature distribution of the multilayer resistive random access memory according to any one of claims 1 to 5, wherein in step S8, the temperature distribution model is any one of a normal distribution, an F distribution and a T distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811344613.1A CN109470377B (en) | 2018-11-12 | 2018-11-12 | Temperature distribution testing method of multilayer resistive random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811344613.1A CN109470377B (en) | 2018-11-12 | 2018-11-12 | Temperature distribution testing method of multilayer resistive random access memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109470377A CN109470377A (en) | 2019-03-15 |
| CN109470377B true CN109470377B (en) | 2020-09-25 |
Family
ID=65672105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811344613.1A Active CN109470377B (en) | 2018-11-12 | 2018-11-12 | Temperature distribution testing method of multilayer resistive random access memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109470377B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106919723A (en) * | 2015-12-24 | 2017-07-04 | 中国科学院微电子研究所 | The fuel factor assessment of three-dimensionally integrated resistance-variable storing device and the method for reducing hot crosstalk |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11232607A (en) * | 1998-02-13 | 1999-08-27 | Fujitsu Ltd | Storage device |
| EP1978371A1 (en) * | 2007-04-02 | 2008-10-08 | Nxp B.V. | Electromigration testing and evaluation apparatus and methods |
| US8750065B2 (en) * | 2011-06-28 | 2014-06-10 | Rochester Institute Of Technology | Thermal management apparatuses with temperature sensing resistive random access memory devices and methods thereof |
| CN104409632B (en) * | 2014-05-31 | 2017-05-10 | 福州大学 | Three dimension (3D) printing preparation method for multilayer structure organic resistive random access memory |
| CN107220406A (en) * | 2017-04-25 | 2017-09-29 | 西安电子科技大学 | A kind of method for predicting semiconductor device temperature distribution |
-
2018
- 2018-11-12 CN CN201811344613.1A patent/CN109470377B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106919723A (en) * | 2015-12-24 | 2017-07-04 | 中国科学院微电子研究所 | The fuel factor assessment of three-dimensionally integrated resistance-variable storing device and the method for reducing hot crosstalk |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109470377A (en) | 2019-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101341235B1 (en) | Eliminating inline positional errors for four-point resistance measurement | |
| TW200907367A (en) | Method to determine electromigration parameters from tests on single device | |
| CN108010558A (en) | A kind of measuring signal integrality method of memory | |
| US9252187B2 (en) | Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips | |
| WO2022041198A1 (en) | Temperature change calculation method for three-dimensional stacked memory chip | |
| US9404953B2 (en) | Structures and methods for monitoring dielectric reliability with through-silicon vias | |
| CN106558335A (en) | Storage drive device and method | |
| CN106683708A (en) | Method for testing 3D NAND word line resistance | |
| US20200119408A1 (en) | Battery management apparatus and method | |
| US10418549B2 (en) | Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory | |
| CN109470377B (en) | Temperature distribution testing method of multilayer resistive random access memory | |
| JP2022032964A5 (en) | ||
| CN109493912B (en) | Temperature distribution testing method of multilayer resistive random access memory | |
| CN108956686B (en) | Method for measuring real-time heat transfer capacity of irregular solid wall surface | |
| CN106053527A (en) | Method for testing anisotropic heat diffusion coefficient of power battery at same time | |
| CN104575592B (en) | Method and apparatus for q level memory units | |
| CN106504795A (en) | Memory device and its operational approach | |
| CN109815534B (en) | Flash memory life prediction method and system based on decision tree algorithm | |
| CN112311361A (en) | Method and device for confirming step pulse, electronic equipment and storage medium | |
| CN201497592U (en) | Temperature tactile sensing device | |
| CN115485833A (en) | Test structure and test method | |
| CN211743145U (en) | Test structure | |
| US10852350B2 (en) | Defect mitigation in a crossbar-based computing environment | |
| CN109342499B (en) | CCL (continuous liquid chromatography) through-flow resistance detection method, system and device and readable storage medium | |
| CN105869688A (en) | Measuring method and device for containment water-film coverage rate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |