CN109459910A - For the Sub-resolution assist features setting method of metal layer process hot spot - Google Patents
For the Sub-resolution assist features setting method of metal layer process hot spot Download PDFInfo
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- CN109459910A CN109459910A CN201811396619.3A CN201811396619A CN109459910A CN 109459910 A CN109459910 A CN 109459910A CN 201811396619 A CN201811396619 A CN 201811396619A CN 109459910 A CN109459910 A CN 109459910A
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- metal
- sub
- assist features
- resolution assist
- hot spot
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Abstract
The invention discloses a kind of Sub-resolution assist features setting methods for metal layer process hot spot, comprising the following steps: filters out the metal border region of metal layer process hot spot；Label is generated to the metal edges filtered out；Conventional regulation type optical approach effect amendment is carried out to metal layer domain；The length of the adjacent side of the labeled metal edges of judgement, according to the parameter of different adjacent side length optimization Sub-resolution assist features.The present invention is optimized for the lesser process heat point of process window in metal layer, addition Sub-resolution assist features simultaneously optimize its parameter, can effectively increase process window, metal line bridging problem caused by avoiding process window smaller, process risk is reduced, product yield is promoted.
Description
Technical field
The invention belongs to microelectronics and semiconductor integrated circuit manufacturing fields, and in particular to one kind is for metal layer process heat
The Sub-resolution assist features setting method of point.
Background technique
With the rapid development of semiconductor processing technology, semiconductor devices is in order to reach faster arithmetic speed, bigger
Data storage amount and more functions, semiconductor chip develop to more high integration direction；And the integrated level of semiconductor chip
Higher, then the characteristic size (CD, Critical Dimension) of semiconductor devices is smaller, have reached at present 28nm and its
Following process node.With the extension of node, the minimum design rule of metal layer also becomes smaller and smaller, meeting in layout design
The lesser hot spot region of many process windows is hidden, dimension of picture is constantly close to the capacity limit of litho machine board, photoetching process
Used in lithographic wavelength (193nm) be much larger than characteristic size.
For these hot spot regions of domain, usually there are two types of processing modes: a kind of method is stretched to domain,
Although easy to operate, controllability is bad, and generally requiring multiple adjustment repeatedly can be only achieved ideal effect；Another kind side
Method is addition Sub-resolution assist features (SRAF, Sub-resolution assistant feature) in domain, these
Secondary graphics will not be transferred on semiconductor devices in actual exposure later period figure, can effectively improve the space frequency of figure
Rate and aerial image increase the depth of focus for closing on exposure figure, improve the process window of hot spot region.
Sub-resolution assist features are added with two ways: one is rule-based Sub-resolution assist features to add
Add, that is, establishes a set of Sub-resolution assist features addition rule, Sub-resolution assist features are added around main graphic；It is another
Kind it is the Sub-resolution assist features addition based on model, that is, establishes after model that obtain effect by iterative fitting operation best
Sub-resolution assist features.
It is smaller and smaller for the size of aforementioned hot spot region, need the parameter selection of Sub-resolution assist features to be added
More and more important, conventional rule-based Sub-resolution assist features are no longer satisfied harsh process window requirement.But
It is that the calculating time of the Sub-resolution assist features addition manner Run Script based on model is long, it is big to computational resource requirements,
A large amount of time and software and hardware calculation resources are typically taken up, and the graphics shape added is complicated, mask plate production and Asia point
The verifying cost and difficulty of resolution secondary graphics safety also will increase.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of Sub-resolution assist features for metal layer process hot spot
Setting method can effectively increase the process window of metal layer.
In order to solve the above technical problems, the Sub-resolution assist features provided by the invention for metal layer process hot spot are set
Method is set, is included the following steps:
Step 1, the metal border region of metal layer process hot spot is filtered out；
Step 2, label is generated to the metal edges filtered out；
Step 3, conventional regulation type optical approach effect is carried out to metal layer domain to correct；
Step 4, the length for judging the adjacent side of labeled metal edges, according to different adjacent side length optimization Subresolutions
The parameter of secondary graphics, and add the Sub-resolution assist features after optimization.
Wherein, in step 1, there is the through-hole of other layers of domain of connection, the through-hole and institute in the metal border region
Distance between the metal edges in region is minimum design rule or greater than minimum design rule but range difference is no more than
10nm。
Further, the distance between metal edges of the through-hole and region are no more than 30nm.
Further, the through-hole includes upper via layer and lower through-hole layer, the side length of the upper via layer and lower through-hole layer
For minimum design rule.
Wherein, in step 1, in the different metal layer process hot spots being located on the same floor, the metal edges that filter out it
Between distance be minimum design rule, or be greater than minimum design rule but range difference and be no more than 10nm, one of metal layer
Width of the technique hot spot on the direction perpendicular to own metal side is not less than 140nm.
Wherein, in step 4, the adjacent side of the metal edges and labeled metal edges are vertical and of length no more than
50nm。
Preferably, in step 4, according between the adjacent side length of labeled metal edges, the metal edges filtered out away from
From and width of the metal layer process hot spot on the direction perpendicular to own metal side, optimize Sub-resolution assist features
Parameter.
Wherein, the parameter of the Sub-resolution assist features include Sub-resolution assist features and labeled metal edges it
Between distance, the length and width of Sub-resolution assist features.
Preferably, carrying out modular form optics after step 4 to the new edition chart after addition Sub-resolution assist features and facing
Nearly effect amendment.
The present invention is optimized for the lesser process heat point of process window in metal layer, addition Subresolution exposure auxiliary
Figure simultaneously optimizes its parameter, can effectively increase process window, and metal wire caused by avoiding process window smaller is short
Road problem reduces process risk, promotes product yield.
Detailed description of the invention
Fig. 1 is the original layout of metal layer and upper and lower via layer；
Fig. 2 is the improvement domain of metal layer and upper and lower via layer；
Fig. 3 is the flow chart of Sub-resolution assist features setting method of the invention.
Wherein the reference numerals are as follows:
M11 the first technique the second technique of hot spot region M12 hot spot region
The metal edges of the second technique of metal edges L12 hot spot region of the first technique of L11 hot spot region
The upper via layer C2 lower through-hole layer of C1
L12-1 the first adjacent side the second adjacent side of L12-2
The metal edges of the first technique of S hot spot region and the distance between the metal edges of the second technique hot spot region
The the second technique hot spot region D is perpendicular to the width on the direction metal edges L12
Specific embodiment
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.
Sub-resolution assist features setting method provided by the invention for metal layer process hot spot, occurs mainly in
OPC (optical approach effect amendment, Optical Proximity Correction) the domain processing of IC design and figure
During shape enhancing, as shown in figure 3, including the following steps:
Step 1, the metal border region of metal layer process hot spot is filtered out；
In the different metal layer process hot spots being located on the same floor, the distance between metal edges filtered out set for minimum
Meter rule, or be greater than minimum design rule but range difference and be no more than 10nm, one of metal layer process hot spot perpendicular to
Width on the direction on own metal side is not less than 140nm；
There is the through-hole of other layers of domain of connection, the through-hole includes upper via layer and lower through-hole in the metal border region
Layer, the distance between metal edges of the through-hole and region for minimum design rule or be greater than minimum design rule but
Range difference is no more than 10nm；
Preferably, the upper via layer and the side length of lower through-hole layer are minimum design rule, the gold of through-hole and region
Belong to the distance between side and is no more than 30nm；
Step 2, label is generated to the metal edges filtered out；
Step 3, conventional regulation type optical approach effect is carried out to metal layer domain to correct；
Step 4, the length for judging the adjacent side of labeled metal edges, according to different adjacent side length optimization Subresolutions
The parameter of secondary graphics, and add the Sub-resolution assist features after optimization；
The adjacent side of the metal edges is vertical with labeled metal edges, and of length no more than 50nm；
More optimizedly, according to the distance between the adjacent side length of labeled metal edges, the metal edges filtered out and gold
Belong to width of the layer process hot spot on the direction perpendicular to own metal side, optimizes the parameter of Sub-resolution assist features.
Preferably, optimization method specifically:
The first step defines rectangular area using the adjacent side of labeled metal edges and the metal edges as side；
Metal layer process hot spot region where labeled metal edges is removed what aforementioned rectangular region was formed by second step
Zone boundary is defined as destination layer；
Third step, add Sub-resolution assist features SRAF, make the Sub-resolution assist features to preceding aim layer most
Small distance is the minimum value of setting, and the minimum value of the setting can be obtained by experiment.
Preferably, carrying out modular form optics after step 4 to the new edition chart after addition Sub-resolution assist features and facing
Nearly effect amendment.
Wherein, the parameter of the Sub-resolution assist features include Sub-resolution assist features and labeled metal edges it
Between distance, the length and width of Sub-resolution assist features.
First embodiment
As shown in Figure 1, filtering out the metal layer of technique hot spot region and the original layout of upper and lower via layer.
Wherein, the first technique hot spot region M11 and the second technique hot spot region M12 is same layer metal, the first technique hot spot
The distance between the metal edges L12 of the metal edges L11 of region M11 and the second technique hot spot region M12 S is minimum design rule,
Second technique hot spot region M12 is being 140nm perpendicular to the width D on the direction metal edges L12, is located at the first technique hot zone
Upper via layer C1 and upper layer circuit communication in the M11 of domain, the lower through-hole layer C2 in the second technique hot spot region M12 is under
Layer circuit communication, and the tangent (one side of i.e. upper via layer C1 the upper via layer C1 and metal edges L11 of the first technique hot spot region
It is bonded with the metal edges L11 of the first technique hot spot region), the metal edges L12 phase of lower through-hole layer C2 and the second technique hot spot region
(i.e. one side of lower through-hole layer C2 with the metal edges L12 of the second technique hot spot region is tangent be bonded) is cut, metal layer and up and down is met
The minimum design rule of via layer.
In the present embodiment, label is generated to the metal edges L12 of the wider technique hot spot region M12 filtered out.
After carrying out conventional regulation type optical approach effect amendment, the first adjacent side of labeled metal edges L12 is judged
The length of L12-1, the second adjacent side L12-2, in the present embodiment, adjacent side length is about 10nm.
According to the distance between adjacent side length, width D, metal edges L11 and metal edges L12 S, optimize the parameter of SRAF, from
And determine SRAF at a distance from metal edges L12, the length of SRAF and width, and (in the present embodiment, by the SRAF after optimization
The SRAF being negative) it is added in metal layer.
As shown in Fig. 2, optimization method specifically: with the adjacent side of labeled metal edges L12 and metal edges L12
L12-1, L12-2 are side, rectangular area are defined, such as Fig. 2 bend region；By the metal where labeled metal edges L12
Layer process hot spot region M12 removes the zone boundary that aforementioned rectangular region is formed and is defined as destination layer；Add Subresolution auxiliary
Figure SRAF, the minimum value for setting the Sub-resolution assist features to the minimum range of preceding aim layer, the setting
Minimum value can be obtained by experiment.Since actual graphical includes outwardly projecting rectangular area, therefore for the Asia point of destination layer addition
Resolution secondary graphics SRAF does not violate minimum rule to labeled metal edges L12 and adjacent side L12-1, L12-2, while
Realize the adjustable optimization of distance parameter of SRAF to labeled metal edges L12 outstanding.
Subsequent modular form optical approach effect amendment is finally carried out again.
Certainly, SRAF parameter is optimized, the distance between metal edges L11 and metal edges L12 and certain on one side perpendicular to
Width, adjacent side length of metal edges of metal edges etc. are also contemplated that actual process ability to determine.
The present invention is optimized for the lesser process heat point of process window in metal layer, excellent using wider metallic region
Change and add the optimized Subresolution exposure secondary graphics of parameter, analog result obtains between metal wire and metal wire
Insulation layer increase, can effectively increase process window, metal line bridging problem caused by avoiding process window smaller, drop
Low process risk promotes product yield.
The present invention has been described in detail through specific embodiments, which is only of the invention preferable
Embodiment, the invention is not limited to above embodiment.Without departing from the principles of the present invention, the technology of this field
The equivalent replacement and improvement that personnel make are regarded as in the technology scope that the present invention is protected.
Claims (9)
1. a kind of Sub-resolution assist features setting method for metal layer process hot spot, which is characterized in that including walking as follows
It is rapid:
Step 1, the metal border region of metal layer process hot spot is filtered out；
Step 2, label is generated to the metal edges filtered out；
Step 3, conventional regulation type optical approach effect is carried out to metal layer domain to correct；
Step 4, the length for judging the adjacent side of labeled metal edges assists figure according to different adjacent side length optimization Subresolutions
The parameter of shape, and add the Sub-resolution assist features after optimization.
2. the Sub-resolution assist features setting method according to claim 1 for metal layer process hot spot, feature
It is in step 1, there is the through-hole of other layers of domain of connection in the metal border region, the through-hole and region
The distance between metal edges are for minimum design rule or greater than minimum design rule but range difference is no more than 10nm.
3. the Sub-resolution assist features setting method according to claim 2 for metal layer process hot spot, feature
It is, the distance between metal edges of the through-hole and region are no more than 30nm.
4. the Sub-resolution assist features setting method according to claim 2 for metal layer process hot spot, feature
It is, the through-hole includes upper via layer and lower through-hole layer, and the side length of the upper via layer and lower through-hole layer is minimal design rule
Then.
5. the Sub-resolution assist features setting method according to claim 1 for metal layer process hot spot, feature
It is, in step 1, in the different metal layer process hot spots being located on the same floor, the distance between metal edges filtered out
For minimum design rule, or it is greater than minimum design rule but range difference is no more than 10nm, one of metal layer process hot spot
Width on the direction perpendicular to own metal side is not less than 140nm.
6. the Sub-resolution assist features setting method according to claim 1 for metal layer process hot spot, feature
It is, in step 4, the adjacent side of the metal edges is vertical with labeled metal edges, and of length no more than 50nm.
7. the Sub-resolution assist features setting method according to claim 5 for metal layer process hot spot, feature
It is, in step 4, according to the distance between the adjacent side length of labeled metal edges, the metal edges filtered out and metal
Width of the layer process hot spot on the direction perpendicular to own metal side, optimizes the parameter of Sub-resolution assist features.
8. the Sub-resolution assist features setting method according to claim 1 or claim 7 for metal layer process hot spot, special
Sign is, the parameter of the Sub-resolution assist features include between Sub-resolution assist features and labeled metal edges away from
Length and width from, Sub-resolution assist features.
9. the Sub-resolution assist features setting method according to claim 1 for metal layer process hot spot, feature
It is, after step 4, the amendment of modular form optical approach effect is carried out to the new edition chart after addition Sub-resolution assist features.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110647008A (en) * | 2019-09-26 | 2020-01-03 | 上海华力集成电路制造有限公司 | Method for screening SBAR rules |
| CN116776782A (en) * | 2023-08-25 | 2023-09-19 | 宁波联方电子科技有限公司 | Metal level EDA display module and method in integrated circuit process manual |
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