CN109455946A - A kind of W with electrochromic property18O49/WO3Laminated film and preparation method thereof - Google Patents
A kind of W with electrochromic property18O49/WO3Laminated film and preparation method thereof Download PDFInfo
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- CN109455946A CN109455946A CN201910008602.4A CN201910008602A CN109455946A CN 109455946 A CN109455946 A CN 109455946A CN 201910008602 A CN201910008602 A CN 201910008602A CN 109455946 A CN109455946 A CN 109455946A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/219—CrOx, MoOx, WOx
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
- C03C2217/241—Doped oxides with halides
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of W with electrochromic property18O49/WO3Laminated film, WO3Layer and W18O49Layer is sequentially deposited on transparent conducting glass from top to bottom.The invention discloses the preparation methods of the laminated film, comprising the following steps: 1) using DC reactive sputtering method in clean transparent conductive glass surface deposited oxide tungsten, annealing obtains WO3Layer；2) precursor solution is placed in reaction kettle, is deposited with WO3The transparent conducting glass of layer is placed in reaction kettle, the WO of electrically conducting transparent glass3Layer is higher by liquid level 0-3mm；3) reaction kettle obtains after taking-up with W after preset temperature reacts preset time18O49/WO3The transparent conducting glass of laminated film；Fine and close WO3There is very big contribution to the military service stable circulation performance of laminated film, is the WO of more bigger serface3The realization of nanostructured morphologies provides transition, to form the laminated film of higher discoloration efficiency.
Description
Technical field
It is especially a kind of with electrochromic property the invention belongs to the preparation technical field of electrochomeric films
W18O49/WO3Laminated film and preparation method thereof.
Background technique
Under environmentally protective overall background, electrochromic material and device are since it shows in low energy consumption, Electronic Paper, building
The application prospect in the fields such as intelligent power saving and infrared stealth and attract attention.Tungsten is the Dominant Mineral Resources in China, three oxidations
Tungsten is both research electrochromic material the most sufficient and the most excellent inorganic electrochromic material of performance.Electrochromism
Refer to that there is a phenomenon where stablize reversible change under the action of extra electric field for the optical properties of material.Tungstic acid is a kind of N-shaped
Semiconductor, forbidden bandwidth about 2.4ev have good response to visible light and near infrared light.A.Antonaia et al. is using electricity
Beamlet evaporation is prepared for a-WO3/c-WO3Laminated film, experiment show that the electrochromism response of duplicature under visible light is obvious
It is faster than monofilm (Electrochimica Acta, 46 (2001), 2221-2227).With the hair of nano material preparation technology
Exhibition, one-dimensional material is since big specific surface area in electrochromism field causes huge concern, simultaneously because solvent heat legal system
The standby abundant prefered method for becoming nano material preparation of simple, at low cost and nanostructure product morphology.
Zheng etc. directly prepares hexagonal phase WO in substrate using hydro-thermal method3Nano-stick array thin film,
(CrystEng.Comm, 2013,277-284), Yang etc. by hydro-thermal method in FTO substrate grown vertical nanowires chip arrays film,
(J.Mater.Chem, 2012,22 (34): 17744-17752).Since substrate uses electro-conductive glass, the tungsten oxide that hydro-thermal generates
Combination between different elemental substances therewith belongs to non-natural combination, and mutual binding force is poor, is easy to make under service condition
At WO3The removing of film and electro-conductive glass substrate.Jiang-ping Tu etc. is prepared for six sides' on the surface FTO of seeded
The numbers of tree-like nanostructures array of tungsten oxide nanometer linear array (J.Mater.Chem, 2011,21,5492) and different-shape
(Solar Energy Materials&Solar Cells,124(2014)103–110).Seed layer is prepared using spin-coating method, is had
Effect improves the combination of hydro-thermal nanostructure tungsten oxide and electro-conductive glass substrate, but the thickness of the crystal seed of spin-coating method preparation, uniform
Property, surface state etc. are not easily adjusted.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art, provide a kind of with electrochromic property
W18O49/WO3Laminated film and preparation method thereof.
In order to achieve the above objectives, the present invention is achieved by the following scheme:
A kind of W with electrochromic property18O49/WO3Laminated film, WO3Layer and W18O49Layer is sequentially depositing from top to bottom
On transparent conducting glass.
Further, WO3For compacted zone, with a thickness of 30-220nm.
Further, W18O49Layer with a thickness of 200-300nm.
A kind of W with electrochromic property18O49/WO3The preparation method of laminated film, comprising the following steps:
1) using DC reactive sputtering method in clean transparent conductive glass surface deposited oxide tungsten, annealing obtains WO3Layer；
2) precursor solution is placed in reaction kettle, is deposited with WO3The transparent conducting glass of layer is placed in reaction kettle, transparent
The WO of electro-conductive glass3Layer is higher by liquid level 0.5-3mm；
3) it after reaction kettle reacts preset time under preset temperature, obtains after taking-up with W18O49/WO3Laminated film it is saturating
Bright electro-conductive glass.
Further, magnetically controlled DC sputtering parameter is in step 1), and background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering
Power is 70W, operating air pressure 0.6Pa, working gas Ar and O2Flow-rate ratio is 20:3.
Further, precursor solution is WCl that mass fraction is 0.169wt.% in step 2)6, solvent is ethyl alcohol.
Further, which is characterized in that preset temperature is 175-185 DEG C in step 3), preset time 9.5-10h.
Compared with prior art, the invention has the following advantages:
A kind of W with electrochromic property18O49/WO3Laminated film and preparation method thereof passes through DC reactive sputtering method
Prepare WO3On the one hand crystal seed substantially increases the binding force between transparent conducting glass and film, on the other hand can be very convenient
Ground regulates and controls the thickness of crystal seed, crystalline condition etc., and fine and close WO3Have to the military service stable circulation performance of laminated film very big
Contribution is the WO of more bigger serface3The realization of nanostructured morphologies provides transition, to form answering for higher discoloration efficiency
Close film.In addition, the preparation method simple process and low cost, has a wide range of applications in electrochromism field.
Detailed description of the invention
Fig. 1 is tungsten oxide nanometer structure composite film morphology figure prepared by embodiment 1；
Fig. 2 is the X-ray diffractogram of tungsten oxide nanometer structure composite film prepared by embodiment 1,2,3,4；
Fig. 3 is that tungsten oxide nanometer structure composite film prepared by embodiment 1,2,3,4 exists in colour fading state and coloured state
Light transmission rate at 400nm-1300nm；
Fig. 4 is coloration efficiency of the tungsten oxide nanometer structure composite film under -3V voltage prepared by embodiment 1,2,3,4.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein can in addition to illustrating herein or
Sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that cover
Cover it is non-exclusive include, for example, the process, method, system, product or equipment for containing a series of steps or units are not necessarily limited to
Step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, product
Or other step or units that equipment is intrinsic.
The invention will be described in further detail with reference to the accompanying drawing:
Embodiment 1
1) tungsten oxide layer is deposited in clean FTO glass surface using direct current magnetron sputtering process, magnetically controlled DC sputtering
Parameter are as follows: background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering power 70W, operating air pressure 0.6Pa, Ar:O2=20:3,
Sputtering is with a thickness of 36nm；400 DEG C of air anneal 30min form fine and close WO3Monoclinic crystal；
2) electronic balance weighing 0.04g WCl is utilized6Powder pours into 50ml water heating kettle liner and is added the second of 30ml
Alcohol is stirred at room temperature to being completely dissolved, and solution gradually becomes brown color by colourless, completes the configuration of precursor solution；It will be clear
Clean WO3/ FTO is inverted in supporting table, makes WO3Down, it is parallel to the liquid level of reactant, about in the position of the above 1mm of liquid level
It sets.
3) it puts on stainless steel casing and is put into baking oven, taking-up is air-cooled to room after 9.5h is reacted under 175 DEG C of constant temperatures
Temperature takes out sample, is dried up with deionized water repeated flushing, W18O49The thickness of layer is about 200nm, obtains W18O49/WO3/
FTO laminated film.
Embodiment 2
1) using direct current magnetron sputtering process in clean FTO glass surface deposited oxide tungsten layer, the ginseng of magnetically controlled DC sputtering
Number are as follows: background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering power 70W, operating air pressure 0.6Pa, Ar:O2=20:3, splashes
It penetrates with a thickness of 72nm；Then anneal in 400 DEG C of air 30min, forms fine and close WO3Monoclinic crystal.
2) balance precise 0.04g WCl is utilized6Powder pours into 50ml water heating kettle liner and is added the second of 30ml
Alcohol is stirred at room temperature to being completely dissolved, and solution gradually becomes brown color by colourless, completes the configuration of precursor solution；It will be clear
Clean WO3/ FTO is inverted in supporting table, makes WO3Down, it is parallel to the liquid level of reactant, about in the position of the above 0.5mm of liquid level
It sets；
3) it puts on stainless steel casing and is put into baking oven, taking-up is air-cooled to room after 9.5h is reacted under 180 DEG C of constant temperatures
Temperature takes out sample, is dried up with deionized water repeated flushing, W18O49Layer with a thickness of 240nm.
Embodiment 3
1) tungsten oxide layer is deposited in clean FTO glass surface using direct current magnetron sputtering process；Magnetically controlled DC sputtering
Parameter are as follows: background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering power 70W, operating air pressure 0.6Pa, Ar:O2=20:3,
Sputtering is with a thickness of 144nm, and then temperature is 400 DEG C of annealing 30min in air, forms fine and close WO3Monoclinic crystal.
2) balance precise 0.04g WCl is utilized6Powder pours into 50ml water heating kettle liner and is added the second of 30ml
Alcohol is stirred at room temperature to being completely dissolved, and solution gradually becomes brown color by colourless, completes the configuration of precursor solution；It will be clear
Clean WO3/ FTO is inverted in supporting table, WO3Down, it is parallel to the liquid level of reactant, about in the position of the above 3mm of liquid level.
3) it puts on stainless steel casing and is put into baking oven, taking-up is air-cooled to room after 10h is reacted under 185 DEG C of constant temperatures
Temperature takes out sample, is dried up with deionized water repeated flushing, W18O49Layer with a thickness of 300nm.
Embodiment 4
1) using direct current magnetron sputtering process in clean FTO glass surface deposited oxide tungsten layer, the ginseng of magnetically controlled DC sputtering
Number are as follows: background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering power 70W, operating air pressure 0.6Pa, Ar:O2=20:3, splashes
It penetrates with a thickness of 217nm, then keeps the temperature 30min at 400 DEG C of temperature in air, complete annealing, form fine and close WO3Monoclinic crystal
Body；
2) balance precise 0.04g WCl is utilized6Powder pours into 50ml water heating kettle liner and is added the second of 30ml
Alcohol is stirred at room temperature to being completely dissolved, and solution gradually becomes brown color by colourless, completes the configuration of presoma；It will be clean
WO3/ FTO is inverted in supporting table, makes WO3Down, it is parallel to the liquid level of reactant, about in the position of the above 0-3mm of liquid level.
3) it puts on stainless steel casing and is put into baking oven, taking-up is air-cooled to room after 9.8h is reacted under 175 DEG C of constant temperatures
Temperature takes out sample, is dried up with deionized water repeated flushing, W18O49Layer with a thickness of 260nm.
It is tungsten oxide nanometer structure composite film morphology figure prepared by embodiment 1 referring to Fig. 1, Fig. 1, it can be seen that sample table
One layer of W of face homoepitaxial18O49Nano wire film, nano wire is in compacted zone WO3Upper mutually overlap joint, forms latticed pattern.
Referring to fig. 2, Fig. 2 is the X-ray diffractogram of tungsten oxide nanometer structure composite film prepared by embodiment 1,2,3,4,
It is obtained as a result, figure that embodiment 1,2,3,4 is represented with the nanostructure thicknesses of layers of 36nm, 72nm, 144nm, 217nm respectively
In diffraction maximum correspond to monocline WO3Diffraction maximum, due to W18O49(010) diffraction maximum and monocline WO of nano wire3(002) spread out
Peak position coincidence is penetrated, therefore the faint diffraction maximum of nano wire is buried in monocline WO3In the diffraction maximum of film.
Referring to Fig. 3 and Fig. 4, Fig. 3 and Fig. 4 are respectively tungsten oxide nanometer structure composite film prepared by embodiment 1,2,3,4
In colour fading state and coloured state at 400~1300nm light transmission rate and the coloration efficiency under -3V voltage；For testing example
The electrochromic property of tungsten oxide nanometer structural membrane obtained by 1-4 is divided light using electrochemical workstation and UV, visible light
Degree is counted to measure the light transmission rate variation of tungsten oxide nanometer structure composite film obtained and electrochromism response speed, and calculates
Coloration efficiency.
Test uses two-electrode system: with the W of preparation18O49/WO3/ FTO laminated film is as working electrode, with platinum filament
To electrode, using the polycarbonate solution of the lithium perchlorate of 0.1mol/L as electrolyte.The result shows that: when the side of application -3V and 3V
When pressure, the laminated film navy blue and it is transparent between reversible change；
The light transmittance of the laminated film of embodiment 1 has apparent variation in 400~1300nm wave band, in λ=700nm and
67.4% and 76.1% are reached at λ=1000nm, have been 3.8s in the electrochromism coloration time of λ=700nm, fading time is
7.7s, coloration efficiency 46.5cm2/C；
The light transmittance of the laminated film of embodiment 2 has apparent variation in 400~1300nm wave band, in λ=700nm and
49% and 55.7% are reached at λ=1000nm；It is 4.1s in the electrochromism coloration time of λ=700nm, fading time is
6.9s, coloration efficiency 43.6cm2The electrochromism efficiency of/C, the film are preferable, smaller between optical modulation region, and the response time is most
Fastly.
The light transmittance of the laminated film of embodiment 3 has apparent variation in 400~1300nm wave band, in λ=700nm and
60.9% and 81.4% are reached at λ=1000nm；It is 7.6s in the electrochromism coloration time of λ=700nm, fading time is
9.5s, coloration efficiency 38.8cm2/C.The electrochromism efficiency of the film is preferable, larger between optical modulation region, the response time compared with
Fastly.
The light transmittance of the laminated film of embodiment 4 has apparent variation in 400~1300nm wave band, in λ=700nm and
49% and 55.7% are reached at λ=1000nm；It is 8.8s in the electrochromism coloration time of λ=700nm, fading time is
12.8s, coloration efficiency 26.5cm2/C.The electrochromism efficiency of the film is smaller, and maximum between optical modulation region, the response time is most
Slowly.
It to sum up compares, the electrochromism efficiency of the laminated film of embodiment 1 is best, larger between optical modulation region, the response time
Comparatively fast.
Electrochromism is substantially electronic conductivity and Li in an electrochemical reaction process, with film+Insertion diffusion
Rate is related；W first18O49Nano wire has minor diameter and bigger serface, and has a large amount of Lacking oxygen to provide for Li+
The insertion point of low energy barrier potential, therefore entire electrochromic property can be improved；Secondly with compacted zone WO in embodiment3It is thick
The increase of degree, Li+It is embedded in WO3Diffusion length and driving energy in film increase, to reduce electrochromic property.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press
According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention
Protection scope within.
Claims (7)
1. a kind of W with electrochromic property18O49/WO3Laminated film, which is characterized in that WO3Layer and W18O49Layer is from top to bottom
It is sequentially deposited on transparent conducting glass.
2. the W according to claim 1 with electrochromic property18O49/WO3Laminated film, which is characterized in that WO3For
Compacted zone, with a thickness of 30-220nm.
3. the W according to claim 1 or 2 with electrochromic property18O49/WO3Laminated film, which is characterized in that
W18O49Layer with a thickness of 200-300nm.
4. a kind of as described in claim 1 with the W of electrochromic property18O49/WO3The preparation method of laminated film, it is special
Sign is, comprising the following steps:
1) using DC reactive sputtering method in clean transparent conductive glass surface deposited oxide tungsten, annealing obtains WO3Layer；
2) precursor solution is placed in reaction kettle, is deposited with WO3The transparent conducting glass of layer is placed in reaction kettle, electrically conducting transparent
The WO of glass3Layer is higher by liquid level 0.5-3mm；
3) it after reaction kettle reacts preset time under preset temperature, obtains after taking-up with W18O49/WO3The transparent of laminated film is led
Electric glass.
5. the W according to claim 4 with electrochromic property18O49/WO3The preparation method of laminated film, feature
It is, magnetically controlled DC sputtering parameter is in step 1), and background vacuum is lower than 6 × 10-4Pa, room temperature, sputtering power 70W, work
Making air pressure is 0.6Pa, working gas Ar and O2Flow-rate ratio is 20:3.
6. the W according to claim 4 with electrochromic property18O49/WO3The preparation method of laminated film, feature
It is, precursor solution is the WCl that mass fraction is 0.169wt.% in step 2)6, solvent is ethyl alcohol.
7. the W according to claim 4 with electrochromic property18O49/WO3The preparation method of laminated film, feature
It is, preset temperature is 175-185 DEG C in step 3), preset time 9.5-10h.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110590176A (en) * | 2019-08-29 | 2019-12-20 | 合肥工业大学 | Anoxic tungsten oxide/polypyrrole core-shell nanowire array electrochromic film and preparation method thereof |
| CN111592235A (en) * | 2020-05-28 | 2020-08-28 | 中国民航大学 | Multi-dimensional WO3Preparation method of composite electrochromic film |
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| CN107831194A (en) * | 2017-10-30 | 2018-03-23 | 中国石油大学(华东) | A kind of nano line cluster WO sensitive to ammonia3‑W18O49Hetero-junction thin-film |
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| CN109021962A (en) * | 2018-08-30 | 2018-12-18 | 合肥工业大学 | A kind of crystalline state tungstic acid/titanium doped amorphous state tungsten oxide nanometer linear array and preparation method thereof |
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| JPH0371112A (en) * | 1989-08-11 | 1991-03-26 | Nkk Corp | Electrochromic element |
| CN107831194A (en) * | 2017-10-30 | 2018-03-23 | 中国石油大学(华东) | A kind of nano line cluster WO sensitive to ammonia3‑W18O49Hetero-junction thin-film |
| CN108298832A (en) * | 2017-12-29 | 2018-07-20 | 浙江大学 | Tungsten oxide electrochomeric films and preparation method thereof with EO-1 hyperion adjustable range |
| CN109021962A (en) * | 2018-08-30 | 2018-12-18 | 合肥工业大学 | A kind of crystalline state tungstic acid/titanium doped amorphous state tungsten oxide nanometer linear array and preparation method thereof |
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| 付喜锦: "基于W18O49纳米线的以Al3+、Na+、H+为插入离子的电化学行为研究", 《原子与分子物理学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110590176A (en) * | 2019-08-29 | 2019-12-20 | 合肥工业大学 | Anoxic tungsten oxide/polypyrrole core-shell nanowire array electrochromic film and preparation method thereof |
| CN111592235A (en) * | 2020-05-28 | 2020-08-28 | 中国民航大学 | Multi-dimensional WO3Preparation method of composite electrochromic film |
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Effective date of registration: 20211020 Address after: 315000 room 1022, building 2, No.1 Jingshi Road, Cicheng Town, Jiangbei District, Ningbo City, Zhejiang Province Patentee after: Ningbo Geostar Photoelectric Technology Co.,Ltd. Address before: 710049 No. 28 West Xianning Road, Shaanxi, Xi'an Patentee before: XI'AN JIAOTONG University |