CN109455756A - A kind of preparation method and application of SnS quantum dot and nanometer sheet - Google Patents
A kind of preparation method and application of SnS quantum dot and nanometer sheet Download PDFInfo
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- CN109455756A CN109455756A CN201811233179.XA CN201811233179A CN109455756A CN 109455756 A CN109455756 A CN 109455756A CN 201811233179 A CN201811233179 A CN 201811233179A CN 109455756 A CN109455756 A CN 109455756A
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Abstract
The invention discloses a kind of SnS quantum dot and the preparation method and application of nanometer sheet, belong to inorganic semiconductor nanometer material and device arts.The present invention is by the way that SnS powder to be dissolved in aqueous solution, the method removed with liquid phase, and SnS quantum dot and nanometer sheet is prepared, and the size range of quantum dot is 1~5nm, and average-size 2.75nm, the average-size of nanometer sheet is 85nm.SnS quantum dot is deposited in Graphene electrodes, Ohm contact electrode can be formed, the device of acquisition has memristor effect.Method of the invention has the advantages that preparation process is simple and convenient to operate, speed is fast and environmentally protective, the organic solvent of toxicity is not used and generated in preparation process, it is suitble to large-scale production, suitable for fields such as the nano electron devices such as memory, solar batteries, have broad application prospects.
Description
Technical field
The invention belongs to semiconductor nano material technical field, be related to a kind of quantum dot and nanometer sheet, preparation method and
Using more particularly to a kind of two-dimensional semiconductor material SnS quantum dot and nanometer sheet, preparation method and lead in nano electron device
The application in domain.
Background technique
II-VI group compound semiconductor SnS, belongs to two-dimensional layered structure, p-type semiconductor, and forbidden bandwidth is about
1.3eV.Since SnS has high carrier mobility, high absorption coefficient is inexpensive and nontoxic, so in nano electron device, lithium
Ion battery, the fields such as solar battery (absorbed layer) and ultraviolet detector have a wide range of applications potentiality.Quantum dot, also known as
For semiconductor nano, it is made of several hundred to thousands of a atoms, partial size is usually less than 10nm.It, can be with due to quantum size effect
The controllable adjustment to its forbidden bandwidth is realized by quantum spot size.Therefore, the preparation and application of SnS quantum dot cause
Research extensively.In general, using N- methylpyrrole when two-dimensional material quantum dot (including SnS quantum dot) is prepared using liquid phase stripping method
The organic solvents such as alkanone (NMP), dinethylformamide (DMF) and isopropylamine (IPA), the general boiling point of these organic solvents compared with
It is high, it is difficult to volatilization removal.And in nano electron device and field of photoelectric devices, the degree of purity of material and device is required very
Height, so preparation is free of the material of organic solvent etc. and contacts with electrode formation good ohmic most important.Thus, it is necessary to
The preparation method for developing a kind of pure SnS quantum dot, makes its synthesis process not add organic solvent and other organic matters, and sink
Good ohmic contact can be formed on product to electrode.
Summary of the invention
The problem of for existing method, the purpose of the present invention is to provide a kind of preparation methods of SnS quantum dot
And the application in nano electron device field.Without organic solvent and impurity and Graphene electrodes in SnS quantum dot of the invention
Good Ohmic contact is formed, and the memory device with memristor effect can be obtained.The method raw material are simple, cost
It is low, it to the pollution-free of environment, can synthesize at normal temperature, be suitble to large-scale production, have broad application prospects.
The technological core of the invention is, SnS powder is dissolved in aqueous solution, and introducing is avoided to be difficult to volatilize and remove organic
Solvent and impurity；Solution is sufficiently mixed by shear agitation and removed between preliminary layer；Utilize water bath sonicator and plug-in type
The difference screening quantum dot and nanometer sheet of probe sonication.
The size distribution of 1~5nm of size of SnS quantum dot, average-size 2.75nm, quantum dot are surpassed by insertion probe
The time of sound and the revolving speed of centrifuge separation determine.The size range of nanometer sheet is 30~300nm, and average-size is about 85nm, by
The time of water bath sonicator determines.Heat drying after SnS quantum dot solution drop coating is deposited in Graphene electrodes, can form Europe
Nurse contacts electrode, and the device of acquisition has memristor effect.
The preparation method of SnS quantum dot provided by the present invention, specifically includes following steps；
A) the SnS powder (commodity) of 0.5~10 gram mass is dissolved in 0.1~1L deionized water solvent, concentration range
For 1~10g/L.It being stirred using shear mixer, stirring rate 5000-8000r/min, the time is 60-120 minutes,
15-40 DEG C of temperature；Optimal conditions is that stirring rate is 6000r/min, the time 100 minutes, 20 DEG C of temperature, is obtained after being sufficiently stirred
Solution A；
The solution optium concentration is 7g/L；
B) solution A is subjected to insertion probe ultrasound, ultrasonic time is 8~15 hours, amplitude 60%, pulse
ON/OFF time ratio is 5s/5s, 20 DEG C of temperature, passes through the change available solution containing different dimensional quantum points of ultrasonic time；
C) step b) acquired solution is centrifugated, centrifugation rate 6000-12000r/min, centrifugation time 10-
60min takes the 30% of upper solution to obtain the SnS quantum dot；Optimal conditions is that centrifugation rate is 8500r/min, it is opposite from
Mental and physical efforts are 9935, centrifugation time 50min；
The preparation method of SnS nanometer sheet provided by the present invention, specifically includes following steps；
A) the SnS powder (commodity) of 0.5~10 gram mass is dissolved in 0.1~1L deionized water solvent, concentration range
For 1~10g/L.It being stirred using shear mixer, stirring rate 5000-8000r/min, the time is 60-120 minutes,
15-40 DEG C of temperature；Optimal conditions is that stirring rate is 6000r/min, the time 100 minutes, 20 DEG C of temperature, is obtained after being sufficiently stirred
Solution A；
The solution optium concentration is 7g/L；
B) solution A is subjected to water bath sonicator, ultrasonic time is 3~5 hours, 20 DEG C of temperature, ultrasonic by changing
The time available solution containing different sized nanostructures pieces, can be obtained SnS nanometer sheet after centrifugation；
C) step b) acquired solution is centrifugated, centrifugation rate 1000-6000r/min, centrifugation time 10-60min,
The 30% of upper solution is taken to obtain nanometer sheet, it is 3000r/min that optimal conditions, which is centrifugation rate, relative centrifugal force 1238, from
Heart time 30min；
The present invention also provides production SnS quantum dot/graphene memristor method with aforementioned SnS quantum dot, specifically
Including following steps；
1), it is cleaned by ultrasonic SiO with ethyl alcohol, acetone and deionized water2/ Si substrate；
2) single-layer graphene of CVD growth then, is transferred to clean SiO in such a way that wet process shifts2/ Si substrate
On；
3), the graphene of transfer is etched with the method that ultraviolet photolithographic and oxygen gas plasma etch one 15 microns wide
Channel, make graphene formed two electrodes, oxygen gas plasma etching condition be electric current be 20-25mA, oxygen flow
20sccm, etch period 20min；
4), then, by SnS quantum dot solution drop coating on Graphene electrodes, substrate placement is heated on hot plate
Up to SnS quantum dot/graphene memristor product after drying, heat drying 1 hour, temperature was 180 DEG C.
SnS quantum dot/graphene memristor structure of preparation is as shown in Fig. 4 structural schematic diagram.
Method raw material of the invention are simple, and utilization rate is high, at low cost, and the stable repetitive rate of performance is good, and non-environmental-pollution is fitted
Close large-scale production.
Detailed description of the invention
Fig. 1 is SnS quantum dot high resolution transmission electron microscopy (HRTEM) schematic diagram；
Wherein a is SnS quantum dot TEM schematic diagram；B is quantum dot high-resolution lattice fringe schematic diagram；C is quantum dot size
Statistical Butut；
Fig. 2 is SnS nanometer sheet scanning electron microscope (SEM) schematic diagram and nanometer sheet size statistic distribution map；
Fig. 3 is photon energy (forbidden bandwidth) and absorption coefficient square root (α h ν)1/2Relational graph (a be SnS quantum dot, b
For SnS nanometer sheet)；
Fig. 4 is SnS quantum dot/graphene memristor structural schematic diagram；
Fig. 5 is SnS quantum dot and electrode graphite alkene Ohmic contact IV characteristic curve；
Fig. 6 is memristor IV characteristic curve.
Specific embodiment
Embodiment 1
Prepare SnS quantum dot:
In beaker, 2.1 grams of SnS powder are dissolved in 300ml deionized water, solution is filled using shear agitation instrument
Divide stirring and tentatively removes, stirring rate 6000r/min, the time 100 minutes, 20 DEG C of temperature；Then wherein 200ml solution is taken
Be placed in another beaker, by the beaker place in a water bath, keep bath temperature be 20 DEG C, using insertion probe Ultrasound Instrument into
One step removing SnS separates it between layers, and pulse ON/OFF time ratio is 5s/5s, and ultrasonic time is 15 hours；Finally, logical
It crosses centrifuge separation and obtains quantum dot solution, centrifugation rate 8500r/min, relative centrifugal force 9935, centrifugation time
50min；After centrifugation, the 30% of upper solution is taken, obtains the pure quantum dot solution of SnS.
Embodiment 2
Prepare SnS nanometer sheet:
In beaker, 2.1 grams of SnS powder are dissolved in 300ml deionized water, solution is filled using shear agitation instrument
Divide stirring and tentatively removes, stirring rate 6000r/min, the time 100 minutes, 20 DEG C of temperature；Then wherein 100ml solution is taken
It is placed in another beaker, which is placed in a water bath, keeping bath temperature is 20 DEG C or so；Using water bath sonicator instrument into one
Step removing SnS separates it between layers, and ultrasonic time is 3 hours；SnS nanometer sheet is obtained finally, separating by centrifuge,
Centrifugation rate is 3000r/min, relative centrifugal force 1238, centrifugation time 30min；After centrifugation, the 30% of upper solution is taken, is obtained
Obtain SnS nanometer sheet solution.
Embodiment 3
Prepare SnS quantum dot/graphene memristor:
It is cleaned by ultrasonic SiO with ethyl alcohol, acetone and deionized water2/ Si substrate, then by CVD in such a way that wet process shifts
The single-layer graphene of growth is transferred to clean SiO2On/Si substrate, with the method for ultraviolet photolithographic and oxygen gas plasma etching
Graphene is etched into 15 microns of wide channels, graphene is made to form two electrodes.The condition of oxygen gas plasma etching
It is 20-25mA, oxygen flow 20sccm, etch period 20min for electric current.Then, by SnS quantum dot solution drop coating in graphene
On electrode, substrate is placed into heat drying 1 hour on hot plate, temperature is 180 DEG C.
SnS quantum dot/graphene memristor structure of preparation is as shown in Fig. 4 structural schematic diagram.Fig. 5 be SnS quantum dot with
The IV characteristic curve of electrode graphite alkene can be seen that the linear change of approximate Ohmic contact in figure.The IV characteristic curve of Fig. 6 is shown
Apparent hysteretic characteristic, and as shown, the scanning of a cycle shows biggish electricity as voltage changes to 3V from -3V
Stream, and have hysteretic phenomenon；Second period from -3V changes to 3V with voltage, and electric current changes to minimum；The subsequent period, electric current by
It is cumulative big, and all show hysteretic phenomenon.These Current Voltage variation relations show SnS quantum dot/graphene of preparation
Structure there is neuron memristor effect, neuroid can be used in, neuron calculates and the fields such as memory.
Claims (7)
1. a kind of preparation method of SnS quantum dot, it is characterised in that specifically include following steps；
A) the commodity SnS powder of 0.5~10 gram mass is dissolved in 0.1~1L deionized water solvent, using shear mixer
It is stirred, stirring rate 5000-8000r/min, the time is 60-120 minutes, 15-40 DEG C of temperature；It is obtained after being sufficiently stirred
Solution A；
B) solution A being subjected to insertion probe ultrasound, ultrasonic time is 8~15 hours, amplitude 60%, pulse opens/
Pass time ratio is 5s/5s, 20 DEG C of temperature, passes through the change available solution containing different dimensional quantum points of ultrasonic time；
C) step b) acquired solution is centrifugated, centrifugation rate 6000-12000r/min, centrifugation time 10-60min take
The 30% of upper solution obtains the SnS quantum dot solution.
2. a kind of preparation method of SnS quantum dot according to claim 1, it is characterised in that a) optimal conditions is in step
Stirring rate is 6000r/min, and the time 100 minutes, 20 DEG C of temperature, the solution optium concentration was 7g/L.
3. a kind of preparation method of SnS quantum dot according to claim 1 or 2, it is characterised in that c) optimal item in step
Part is that centrifugation rate is 8500r/min, relative centrifugal force 9935, centrifugation time 50min.
4. a kind of preparation method of SnS nanometer sheet, it is characterised in that specifically include following steps；
A) the commodity SnS powder of 0.5~10 gram mass is dissolved in 0.1~1L deionized water solvent, using shear mixer
It is stirred, stirring rate 5000-8000r/min, the time is 60-120 minutes, 15-40 DEG C of temperature；Optimal conditions is stirring
Rate is 6000r/min, the time 100 minutes, 20 DEG C of temperature, obtains solution A after being sufficiently stirred；
B) solution A is subjected to water bath sonicator, ultrasonic time is 3~5 hours, 20 DEG C of temperature, passes through change ultrasonic time
The available solution containing different sized nanostructures pieces, can be obtained SnS nanometer sheet after centrifugation；
C) step b) acquired solution is centrifugated, centrifugation rate 1000-6000r/min, centrifugation time 10-60min take
The 30% of layer solution obtains nanometer sheet.
5. a kind of preparation method of SnS nanometer sheet according to claim 4, it is characterised in that a) optimal conditions is in step
Stirring rate is 6000r/min, and the time 100 minutes, 20 DEG C of temperature, the solution optium concentration was 7g/L.
6. a kind of preparation method of SnS nanometer sheet according to claim 4 or 5, it is characterised in that c) optimal item in step
Part is that centrifugation rate is 3000r/min, relative centrifugal force 1238, centrifugation time 30min.
7. a kind of SnS quantum dot according to claim 1 makes SnS quantum dot/graphene memristor method, feature exists
In specifically including following steps；
1), it is cleaned by ultrasonic SiO2/Si substrate with ethyl alcohol, acetone and deionized water；
2) single-layer graphene of CVD growth then, is transferred to clean SiO in such a way that wet process shifts2On/Si substrate；
3) graphene of transfer, is etched into 15 microns of wide ditches with the method that ultraviolet photolithographic or oxygen gas plasma etch
Road makes graphene form two electrodes, and it is 20-25mA, oxygen flow 20sccm that the condition of oxygen gas plasma etching, which is electric current,
Etch period 20min；
4), then, by SnS quantum dot solution drop coating on Graphene electrodes, substrate is placed into heat drying on hot plate
Afterwards up to SnS quantum dot/graphene memristor product, heat drying 1 hour, temperature was 180 DEG C to get SnS quantum dot/graphite
Alkene memristor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165049A (en) * | 2019-04-26 | 2019-08-23 | 华中科技大学 | It is a kind of based on receive fluid interface type memristor and its preparation and application |
| CN111900249A (en) * | 2020-07-15 | 2020-11-06 | 南京邮电大学 | Memristor and preparation method thereof |
| CN113140653A (en) * | 2021-03-25 | 2021-07-20 | 国科大杭州高等研究院 | Method for depositing liquid-phase separated two-dimensional material, film and application |
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| CN113140653A (en) * | 2021-03-25 | 2021-07-20 | 国科大杭州高等研究院 | Method for depositing liquid-phase separated two-dimensional material, film and application |
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