CN114634732B - Two-dimensional material water-based ink and preparation method and application thereof - Google Patents
Two-dimensional material water-based ink and preparation method and application thereof Download PDFInfo
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- CN114634732B CN114634732B CN202210275934.0A CN202210275934A CN114634732B CN 114634732 B CN114634732 B CN 114634732B CN 202210275934 A CN202210275934 A CN 202210275934A CN 114634732 B CN114634732 B CN 114634732B
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- Prior art keywords
- nanosheets
- dimensional material
- selenide
- diselenide
- sulfide
- Prior art date
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- 239000000463 material Substances 0.000 title claims abstract description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000002135 nanosheet Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 24
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical group S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 12
- CXRFFSKFQFGBOT-UHFFFAOYSA-N bis(selanylidene)niobium Chemical compound [Se]=[Nb]=[Se] CXRFFSKFQFGBOT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000003960 organic solvent Substances 0.000 claims abstract description 5
- 239000007864 aqueous solution Substances 0.000 claims abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 42
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 33
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- -1 nickel-tantalum sulfide Chemical compound 0.000 claims description 24
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 16
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 12
- VRSMQRZDMZDXAU-UHFFFAOYSA-N bis(sulfanylidene)niobium Chemical compound S=[Nb]=S VRSMQRZDMZDXAU-UHFFFAOYSA-N 0.000 claims description 12
- 150000001768 cations Chemical class 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 12
- ALRFTTOJSPMYSY-UHFFFAOYSA-N tin disulfide Chemical compound S=[Sn]=S ALRFTTOJSPMYSY-UHFFFAOYSA-N 0.000 claims description 12
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims description 11
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 claims description 11
- BGQMOFGZRJUORO-UHFFFAOYSA-M tetrapropylammonium bromide Chemical compound [Br-].CCC[N+](CCC)(CCC)CCC BGQMOFGZRJUORO-UHFFFAOYSA-M 0.000 claims description 11
- CUYHGAIVHCHFIA-UHFFFAOYSA-N bis(selanylidene)rhenium Chemical compound [Se]=[Re]=[Se] CUYHGAIVHCHFIA-UHFFFAOYSA-N 0.000 claims description 10
- YQIVQBMEBZGFBY-UHFFFAOYSA-M tetraheptylazanium;bromide Chemical compound [Br-].CCCCCCC[N+](CCCCCCC)(CCCCCCC)CCCCCCC YQIVQBMEBZGFBY-UHFFFAOYSA-M 0.000 claims description 10
- USWJSZNKYVUTIE-UHFFFAOYSA-N bis(sulfanylidene)rhenium Chemical compound S=[Re]=S USWJSZNKYVUTIE-UHFFFAOYSA-N 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- CADICXFYUNYKGD-UHFFFAOYSA-N sulfanylidenemanganese Chemical compound [Mn]=S CADICXFYUNYKGD-UHFFFAOYSA-N 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 claims description 4
- UNQZZHKBDVCPHA-UHFFFAOYSA-N [Mo].[W].[Se] Chemical compound [Mo].[W].[Se] UNQZZHKBDVCPHA-UHFFFAOYSA-N 0.000 claims description 4
- LNMGXZOOXVAITI-UHFFFAOYSA-N bis(selanylidene)hafnium Chemical compound [Se]=[Hf]=[Se] LNMGXZOOXVAITI-UHFFFAOYSA-N 0.000 claims description 4
- IYJABVNLJXJBTP-UHFFFAOYSA-N bis(selanylidene)tantalum Chemical compound [Se]=[Ta]=[Se] IYJABVNLJXJBTP-UHFFFAOYSA-N 0.000 claims description 4
- WCQOLGZNMNEYDX-UHFFFAOYSA-N bis(selanylidene)vanadium Chemical compound [Se]=[V]=[Se] WCQOLGZNMNEYDX-UHFFFAOYSA-N 0.000 claims description 4
- HKXPEFKCXYKSFA-UHFFFAOYSA-N bis(selanylidene)zirconium Chemical compound [Se]=[Zr]=[Se] HKXPEFKCXYKSFA-UHFFFAOYSA-N 0.000 claims description 4
- ZNDWMUJQNKFBMN-UHFFFAOYSA-N bis(tellanylidene)rhenium Chemical compound [Te]=[Re]=[Te] ZNDWMUJQNKFBMN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 claims description 4
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 4
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 4
- NRJVMVHUISHHQB-UHFFFAOYSA-N hafnium(4+);disulfide Chemical compound [S-2].[S-2].[Hf+4] NRJVMVHUISHHQB-UHFFFAOYSA-N 0.000 claims description 4
- VMJRMGHWUWFWOB-UHFFFAOYSA-N nickel tantalum Chemical compound [Ni].[Ta] VMJRMGHWUWFWOB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- LYZMBUYUNBCSMW-UHFFFAOYSA-N selenium(2-);tin(2+) Chemical compound [Se-2].[Sn+2] LYZMBUYUNBCSMW-UHFFFAOYSA-N 0.000 claims description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 4
- DZXKSFDSPBRJPS-UHFFFAOYSA-N tin(2+);sulfide Chemical compound [S-2].[Sn+2] DZXKSFDSPBRJPS-UHFFFAOYSA-N 0.000 claims description 4
- SWFBFRDZBFXEHJ-UHFFFAOYSA-N titanium diselenide Chemical compound [Se]=[Ti]=[Se] SWFBFRDZBFXEHJ-UHFFFAOYSA-N 0.000 claims description 4
- XWPGCGMKBKONAU-UHFFFAOYSA-N zirconium(4+);disulfide Chemical compound [S-2].[S-2].[Zr+4] XWPGCGMKBKONAU-UHFFFAOYSA-N 0.000 claims description 4
- KBPGBEFNGHFRQN-UHFFFAOYSA-N bis(selanylidene)tin Chemical compound [Se]=[Sn]=[Se] KBPGBEFNGHFRQN-UHFFFAOYSA-N 0.000 claims description 3
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 3
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims description 3
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims description 3
- WALCGGIJOOWJIN-UHFFFAOYSA-N iron(ii) selenide Chemical compound [Se]=[Fe] WALCGGIJOOWJIN-UHFFFAOYSA-N 0.000 claims description 3
- UMUKXUYHMLVFLM-UHFFFAOYSA-N manganese(ii) selenide Chemical compound [Mn+2].[Se-2] UMUKXUYHMLVFLM-UHFFFAOYSA-N 0.000 claims description 3
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 claims description 3
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 2
- HDJLCPMPTBFPCJ-UHFFFAOYSA-N [Mo].[W]=S Chemical compound [Mo].[W]=S HDJLCPMPTBFPCJ-UHFFFAOYSA-N 0.000 claims description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 2
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 claims description 2
- JPIIVHIVGGOMMV-UHFFFAOYSA-N ditellurium Chemical compound [Te]=[Te] JPIIVHIVGGOMMV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 2
- 229940056932 lead sulfide Drugs 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- HQZPMWBCDLCGCL-UHFFFAOYSA-N tantalum telluride Chemical compound [Te]=[Ta]=[Te] HQZPMWBCDLCGCL-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- WFGOJOJMWHVMAP-UHFFFAOYSA-N tungsten(iv) telluride Chemical compound [Te]=[W]=[Te] WFGOJOJMWHVMAP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000002055 nanoplate Substances 0.000 claims 23
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 claims 2
- UDTPFUGTHIHKHJ-UHFFFAOYSA-N S=[Se].[Mo] Chemical compound S=[Se].[Mo] UDTPFUGTHIHKHJ-UHFFFAOYSA-N 0.000 claims 1
- AOLMGDPIQZITEU-UHFFFAOYSA-N [P]=S.[Ni] Chemical compound [P]=S.[Ni] AOLMGDPIQZITEU-UHFFFAOYSA-N 0.000 claims 1
- PKYVUSHSIVOAAG-UHFFFAOYSA-N [S-2].[Cr+3].[Cu+2] Chemical compound [S-2].[Cr+3].[Cu+2] PKYVUSHSIVOAAG-UHFFFAOYSA-N 0.000 claims 1
- WADNUIHBLWBJQY-UHFFFAOYSA-N chromium germanium Chemical compound [Cr].[Ge] WADNUIHBLWBJQY-UHFFFAOYSA-N 0.000 claims 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims 1
- 229920002521 macromolecule Polymers 0.000 claims 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 claims 1
- FAWYJKSBSAKOFP-UHFFFAOYSA-N tantalum(iv) sulfide Chemical compound S=[Ta]=S FAWYJKSBSAKOFP-UHFFFAOYSA-N 0.000 claims 1
- 239000012046 mixed solvent Substances 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 14
- 238000007639 printing Methods 0.000 abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 12
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000009835 boiling Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 50
- 239000000976 ink Substances 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 22
- 230000002687 intercalation Effects 0.000 description 11
- 238000009830 intercalation Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 230000035484 reaction time Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 9
- 239000002064 nanoplatelet Substances 0.000 description 9
- 238000005119 centrifugation Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 238000002508 contact lithography Methods 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CEYNXXRGMKQAGT-UHFFFAOYSA-N chromium sulfanylidenecopper Chemical compound [Cu]=S.[Cr] CEYNXXRGMKQAGT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CHQKVCSVJIMMRE-UHFFFAOYSA-N [Pb]=S.[Sn] Chemical compound [Pb]=S.[Sn] CHQKVCSVJIMMRE-UHFFFAOYSA-N 0.000 description 1
- JAAVTMIIEARTKI-UHFFFAOYSA-N [S--].[S--].[Ta+4] Chemical compound [S--].[S--].[Ta+4] JAAVTMIIEARTKI-UHFFFAOYSA-N 0.000 description 1
- PHPKKGYKGPCPMV-UHFFFAOYSA-N [SeH-]=[Se].[In+3].[SeH-]=[Se].[SeH-]=[Se] Chemical compound [SeH-]=[Se].[In+3].[SeH-]=[Se].[SeH-]=[Se] PHPKKGYKGPCPMV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- PPUZYFWVBLIDMP-UHFFFAOYSA-K chromium(3+);triiodide Chemical compound I[Cr](I)I PPUZYFWVBLIDMP-UHFFFAOYSA-K 0.000 description 1
- DBULDCSVZCUQIR-UHFFFAOYSA-N chromium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Cr+3].[Cr+3] DBULDCSVZCUQIR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007647 flexography Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NKHCNALJONDGSY-UHFFFAOYSA-N nickel disulfide Chemical compound [Ni+2].[S-][S-] NKHCNALJONDGSY-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- MUSFRELEIXGPKU-UHFFFAOYSA-N selanylidenepalladium Chemical compound [Pd]=[Se] MUSFRELEIXGPKU-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/36—Inkjet printing inks based on non-aqueous solvents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
The application discloses two-dimensional material water-based ink and a preparation method and application thereof. The two-dimensional material water-based ink prepared by the application comprises an ink active component and a solvent; the ink active component is molybdenum disulfide nanosheets, black phosphorus nanosheets, niobium diselenide nanosheets or bismuth selenide nanosheets and other two-dimensional material nanosheets; the solvent is water or an aqueous solution added with an organic solvent; the mass fraction of the ink active component in the ink is 0.01% -20%; the thickness of the two-dimensional material nano-sheet is less than 100nm, and the transverse dimension is greater than 5nm. According to the application, different solvents have different boiling points and different volatilization rates, and the two-dimensional nanomaterial has good dispersibility in the mixed solvent, so that marangoni flow can be formed in the process of drying liquid drops, and the occurrence of coffee rings is inhibited, thereby being beneficial to printing. Compared with the prior art, the two-dimensional material water-based ink prepared by the method has the characteristics of environmental protection, simple preparation process and low post-treatment temperature; can be used in integrated circuits.
Description
Technical Field
The application belongs to the technical field of semiconductor printing materials, and particularly relates to two-dimensional material water-based ink, and a preparation method and application thereof.
Background
Future electronic devices will move towards flexibility, intelligence and functionality. As electronic products and devices move to portability, flexibility, bending, and the like, flexible electronic devices have attracted more and more attention. Flexible electronic devices are used in a wide range of applications, such as flexible touch screens, electronic papers, sensors, radio frequency identification tags, photovoltaic cells, solar cells, conductive traces, and the like. Currently, it is most common to combine a substrate loaded with a large number of field effect transistors with a product by transfer printing, or to grow the field effect transistors directly on a target substrate by a process of multiple coating, curing and lithography. However, the method has complex steps and high cost, and is not suitable for large-scale popularization and application of flexible electronic devices. The novel printing technology can better solve the problem. The novel printing technology is to manufacture electronic devices and circuits by means of the printing technology, has simple and convenient process and low cost, can reduce waste of raw materials, is applicable to different substrates, and has the advantages that the technology stands out in flexible electronic manufacturing. Printing electronics include a range of modes such as gravure printing, flexography, inkjet printing, contact printing, screen printing, and laser printing. The contact printing technology has obvious advantages in the preparation of large-area flexible electronic devices, and has the advantages of simple and easy working procedures, wide application range and high printing precision, so that the contact printing technology is applied to printing a series of different electronic components, such as transistors, photovoltaic devices, organic light-emitting diodes, display screens and the like.
For new printing technologies, the preparation and performance of the ink play a critical role. Conductive inks have been developed more recently, as opposed to semiconductor inks, which have not been developed with sufficient attention. The semiconductor ink is a semiconductor composite material composed of semiconductor material and mixed solvent. In the semiconductor ink, countless semiconductor particles are uniformly dispersed in a solvent, and are in an insulating state, and after the semiconductor ink is dried, the solvent volatilizes, so that the printed product has semiconductor properties. With rapid development of nano technology and increasing maturation of printing technology, it is important to develop a semiconductor ink with stable and excellent performance in order to more conveniently and rapidly prepare a multifunctional circuit.
The two-dimensional material nano-sheet is used as a novel semiconductor material with a two-dimensional structure, and has attracted wide attention in the field of semiconductor devices in recent years. Along with the rapid development of science and technology, the number of transistors on a chip always meets the development rule of moore's law in the past decades, and the number of components which can be accommodated on an integrated circuit is doubled every 18-24 months on the premise of unchanged price, but along with the chip processing precision reaching below 10 nm, the physical limit of the traditional silicon-based semiconductor device is gradually approached, and the processing difficulty is also increased. In order to further reduce the size of the device, and continue the development of moore's law, it is a viable approach to explore a new semiconductor material for replacing the traditional silicon-based semiconductor material. Recently, applications of two-dimensional material nano-micro-sheets represented by molybdenum disulfide in semiconductor devices are receiving more and more attention, molybdenum disulfide is a typical transition metal sulfide, has excellent semiconductor properties and simultaneously has excellent performance of resisting short channel effects, and is greatly interesting for scientific researchers in the field of novel semiconductors. Research shows that molybdenum disulfide has extremely strong potential in the field of semiconductor device manufacturing. At present, the main preparation mode of the two-dimensional material semiconductor device is to prepare the two-dimensional material nano-sheet by a CVD or mechanical transfer method, and then to obtain the two-dimensional material nano-sheet by a mask evaporation electrode. The development of semiconductor devices produced by printing techniques is limited by the current lack of research into semiconductor inks. It follows that there is a need to develop new formulations and methods of preparation to meet the needs of printed electronics.
Disclosure of Invention
In order to solve the technical problems, the application aims to provide the two-dimensional material water-based ink which is environment-friendly and does not contain a surfactant.
In order to achieve the above object, the two-dimensional material aqueous ink of the present application comprises an ink active component and a solvent; the ink active component is a two-dimensional material nano sheet; the solvent is water or an aqueous solution added with an organic solvent.
According to the application, the organic solvent is selected from one or more of ethanol, isopropanol, butanol, ethylene glycol, acetonitrile and N, N-dimethylformamide.
According to the application, the mass fraction of the two-dimensional material nano-sheet in the ink is 0.01% -20%.
According to the application, the two-dimensional material nano-sheet is a molybdenum disulfide nano-sheet and a black phosphorus nano-sheet, bismuth selenide nano-sheet, bismuth sulfide nano-sheet, bismuth selenide nano-sheet, bismuth telluride nano-sheet, chromium triiodide nano-sheet, chromium copper sulfide nano-sheet, indium copper selenide nano-sheet, indium copper sulfide nano-sheet, iron selenide nano-sheet, gallium selenide nano-sheet, germanium selenide nano-sheet hafnium disulfide nanosheets, hafnium diselenide nanosheets, indium diselenide nanosheets, manganese sulfide nanosheets, manganese selenide phosphide nanosheets, molybdenum sulfide nanosheets, molybdenum diselenide nanosheets, tungsten sulfide nanosheets, tungsten selenide molybdenum nanosheets, niobium diselenide nanosheets, nickel sulfide nanosheets, tin lead sulfide nanosheets, a tin-palladium selenide nanosheet, a palladium diselenide nanosheet, a rhenium telluride nanosheet, a stannous sulfide nanosheet, a tin disulfide nanosheet, a stannous selenide nanosheet, a tin diselenide nanosheet, a nickel-tantalum sulfide nanosheet, a nickel-tantalum selenide nanosheet, a nickel-tantalum telluride nanosheet, a tantalum diselenide nanosheet, a tantalum ditellulate, a titanium diselenide nanosheet, a vanadium diselenide nanosheet, a tungsten disulfide nanosheet, a tungsten diselenide nanosheet, a tungsten ditelluloses nanosheet, a zirconium disulfide nanosheet, a zirconium trisulfide nanosheet, a zirconium diselenide nanosheet, and a zirconium triselede nanosheet.
According to the application, the morphology of the two-dimensional material nano sheet is lamellar.
According to the application, the thickness of the two-dimensional material nano-sheet is less than 100nm, and the transverse dimension is greater than 5nm.
According to the application, the two-dimensional material nano-sheet is prepared by the following method:
1) In a two-electrode electrochemical system, a two-dimensional material is fixed at the cathode of an electrolytic cell; using a graphite rod as an anode, and increasing the interlayer spacing and volume expansion of the two-dimensional material through electrolysis;
2) And carrying out ultrasonic stripping and centrifugal gradient screening by a centrifugal machine to obtain the two-dimensional material nano sheet.
The two-dimensional material is molybdenum disulfide and black phosphorus, bismuth selenide, bismuth sulfide, bismuth selenide, bismuth telluride, chromium germanium triiodide, chromium sulfide, chromium copper sulfide, copper indium diselenide, copper indium sulfide, copper sulfide, iron selenide, gallium selenide, germanium selenide, hafnium disulfide, hafnium diselenide, hafnium ditelluride, indium selenide, manganese sulfide, manganese selenide, molybdenum sulfide, molybdenum ditelluride, tungsten molybdenum sulfide, tungsten molybdenum selenide, niobium disulfide, niobium diselenide, nickel sulfide, lead sulfide, tin palladium selenide, nickel disulfide palladium diselenide, rhenium telluride, stannous sulfide, tin disulfide, stannous selenide, tin diselenide, nickel tantalum sulfide, nickel tantalum selenide, nickel tantalum telluride, tantalum disulfide, tantalum diselenide, tantalum ditelluride, titanium disulfide, titanium diselenide, vanadium diselenide, tungsten disulfide, tungsten diselenide, tantalum tungsten sulfide, tungsten ditelluride, zirconium disulfide, zirconium trisulfide, zirconium diselenide, and zirconium triselenide crystals.
The electrolyte of the double-electrode electrochemical system in the step 1) is selected from one or more of ethanol, propanol, butanol, acetonitrile, propionitrile and carbon tetrachloride.
One or more macromolecular cations may also be added to the electrolyte of the two-electrode electrochemical system described in step 1).
The macromolecular cation is selected from the group consisting of tetramethyl ammonium bromide, tetraethyl ammonium bromide, tetrapropyl ammonium bromide, tetrabutyl ammonium bromide, and tetraheptyl ammonium bromide.
The voltage of the electrolysis in the step 1) is-0.01V to-100V, and the time is 1min to 72 h.
The rotational speed of the centrifuge in the step 2) is 1000rpm to 10000rpm.
The application also aims to provide a preparation method of the two-dimensional material water-based ink, which comprises the following steps:
s1) dispersing two-dimensional material nano sheets in a solvent, and obtaining a mixed solution after ultrasonic dispersion;
s2) centrifugally screening the mixed solution at 1000-5000 rpm by adopting a centrifugal machine to obtain the two-dimensional material water-based ink.
It is a further object of the present application to provide the use of two-dimensional material aqueous inks in integrated circuits.
Compared with the prior art, the application has the beneficial effects that:
1) The two-dimensional material water-based ink has good printing effect, can be prepared at normal temperature and normal pressure, saves energy, has simple equipment, wide raw material sources and low cost, can be prepared in a large amount, is completely nontoxic and harmless, and can be widely applied to the preparation of other two-dimensional material inks; the method is suitable for industrial production and has practical application value in the field of two-dimensional materials;
2) According to the application, different solvents have different boiling points and different volatilization rates, and the two-dimensional nanomaterial has good dispersibility in the mixed solvent, so that marangoni flow can be formed in the process of drying liquid drops, and the occurrence of coffee rings is inhibited, thereby being beneficial to printing.
Drawings
FIG. 1 is a TEM spectrum of a molybdenum disulfide nanosheet prepared in example 1 of the present application;
FIG. 2 is a photograph of molybdenum disulfide ink prepared in example 1 of the present application;
fig. 3 is an optical micrograph of a molybdenum disulfide film printed with the molybdenum disulfide ink prepared in example 1 of the present application.
Detailed Description
The application is further illustrated by the following examples, which are not to be construed as limiting the application.
Example 1
The bulk molybdenum disulfide crystals were fixed to the cathode of a bipolar cell using graphite rods as the anode. An acetonitrile solution having a concentration of tetramethylammonium bromide salt of 5 mg/ml was used as an electrolyte. The applied voltage was set to 5V and the reaction time was 60min. In the intercalation process, cations of tetramethyl ammonium bromide enter gaps of molybdenum disulfide crystals under the drive of negative potential, so that the interlayer spacing of the molybdenum disulfide crystals is increased, and the volume of the molybdenum disulfide crystals is severely expanded. The expanded molybdenum disulfide crystals were then rinsed several times with absolute ethanol to remove residual tetramethylammonium bromide salt. Ultra-thin molybdenum disulfide nanosheets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifuging. The volume ratio is 7:1:1:0.5:0.5 of water, ethanol, isopropanol, ethylene glycol and butanol were prepared as a mixed solvent, and 5mg of molybdenum disulfide nanoplatelets were dispersed in 4.995g of the mixed solvent. And then centrifugally screening the mixed solution at 1000rpm by adopting a centrifugal machine to obtain the molybdenum disulfide water-based ink. The result shows that the ultrathin molybdenum disulfide nanosheets can be obtained after intercalation and ultrasonic treatment; and the molybdenum disulfide nanosheet ink has good dispersibility and no precipitate.
Example 2
The bulk tungsten disulfide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An ethanol solution having a tetraethylammonium bromide salt concentration of 10 mg/ml was used as an electrolyte. The applied voltage was set to 10V and the reaction time was 60min. In the intercalation process, cations of tetraethylammonium bromide enter gaps of tungsten disulfide crystals under the drive of negative potential, so that the interlayer spacing of the tungsten disulfide crystals is increased, and the volume of the tungsten disulfide crystals is severely expanded. The expanded tungsten disulfide crystals were then rinsed several times with absolute ethanol to remove residual tetraethylammonium bromide salt. Ultra-thin tungsten disulfide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 7:1.5:1.5, preparing a mixed solvent by using water, ethanol and isopropanol, and dispersing 10 mg tungsten disulfide nano-sheets in 4.990g of the mixed solvent to obtain the tungsten disulfide aqueous ink.
Example 3
The bulk molybdenum diselenide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An acetonitrile solution having a concentration of tetrapropylammonium bromide salt of 5 mg/ml was used as an electrolyte. The applied voltage was set at 20V and the reaction time was continued for 60min. In the intercalation process, the cations of tetrapropylammonium bromide enter gaps of the molybdenum diselenide crystals under the drive of negative potential, so that the interlayer spacing of the molybdenum diselenide crystals is increased, and the volume of the molybdenum diselenide crystals is severely expanded. The swollen molybdenum diselenide crystals were then rinsed several times with absolute ethanol to remove residual tetrapropylammonium bromide salt. Ultra-thin molybdenum diselenide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 3:7, preparing a mixed solvent by water and glycol, and dispersing the 15 mg molybdenum diselenide nano-sheets in 4.985g of the mixed solvent to obtain the molybdenum diselenide water-based ink.
Example 4
The bulk tungsten diselenide crystal is fixed on the cathode of a double-electrode electrolytic cell, and a graphite rod is used as the anode. An ethanol solution having a tetrabutylammonium bromide salt concentration of 5 mg/ml was used as an electrolyte. The applied voltage was set to 25V and the reaction time was 60min. In the intercalation process, the cations of tetrabutylammonium bromide enter gaps of the tungsten diselenide crystals under the drive of negative potential, so that the interlayer spacing of the tungsten diselenide crystals is increased, and the volume of the tungsten diselenide crystals is greatly expanded. The swollen tungsten diselenide crystals were then rinsed several times with absolute ethanol to remove residual tetrabutylammonium bromide salt. Ultra-thin tungsten diselenide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 6:2:1:0.5:0.5 of water, ethanol, isopropanol, ethylene glycol and butanol are prepared into a mixed solvent, and 20 mg of tungsten diselenide nano-sheets are dispersed in 4.980g of the mixed solvent, so that the tungsten diselenide aqueous ink can be obtained.
Example 5
The bulk niobium disulfide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. A carbon tetrachloride solution having a tetraheptyl ammonium bromide salt concentration of 5 mg/ml was used as an electrolyte. The applied voltage was set to 30V and the reaction time was 60min. In the intercalation process, the cations of the tetraheptyl ammonium bromide enter gaps of niobium disulfide crystals under the drive of negative potential, so that the interlayer spacing of the niobium disulfide crystals is increased, and the volume of the niobium disulfide crystals is greatly expanded. The swollen niobium disulfide crystals were then rinsed several times with absolute ethanol to remove residual tetraheptyl ammonium bromide salt. Ultra-thin niobium disulfide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifuging. The volume ratio is 7.5:2.5 preparing a mixed solvent of water and ethanol, and dispersing 50 mg niobium disulfide nano-sheets in 4.950g of the mixed solvent to obtain the niobium disulfide aqueous ink.
Example 6
The bulk rhenium disulfide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An acetonitrile solution having a concentration of tetramethylammonium bromide of 2.5 mg/ml and a concentration of tetraethylammonium bromide of 2.5 mg/ml was used as an electrolyte. The applied voltage was set at 35V and the reaction time was continued for 60min. In the intercalation process, cations of tetramethyl ammonium bromide and tetraethyl ammonium bromide enter gaps of rhenium disulfide crystals under the drive of negative potential, so that the interlayer spacing of the rhenium disulfide crystals is increased, and the volume of the rhenium disulfide crystals is greatly expanded. The expanded rhenium disulfide crystals were then washed several times with absolute ethanol to remove residual tetramethylammonium bromide and tetraethylammonium bromide salts. Ultra-thin rhenium disulfide nanoplatelets (less than 100 a nm a in thickness and greater than 5 a nm a in lateral dimension) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 2:7:1, preparing mixed solvent by using water, glycol and butanol, and dispersing 70 mg niobium disulfide nano-sheets in 4.930g of the mixed solvent to obtain the rhenium disulfide aqueous ink.
Example 7
The bulk tin disulfide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An acetonitrile solution having a concentration of tetramethylammonium bromide of 2.5 mg/ml and a concentration of tetrapropylammonium bromide of 2.5 mg/ml was used as an electrolyte. The applied voltage was set at 40V and the reaction time was 60min. In the intercalation process, cations of tetramethyl ammonium bromide and tetrapropyl ammonium bromide enter gaps of tin disulfide crystals under the drive of negative potential, so that the interlayer spacing of the tin disulfide crystals is increased, and the volume of the tin disulfide crystals is severely expanded. The swollen tin disulfide crystals were then rinsed several times with absolute ethanol to remove residual tetramethylammonium bromide and tetrapropylammonium bromide salts. Ultra-thin tin disulfide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 8:1:1, ethanol and isopropanol are prepared into a mixed solvent, and 80 mg tin disulfide nano-sheets are dispersed in 4.920g of the mixed solvent, so that the tin disulfide aqueous ink is obtained.
Example 8
The bulk rhenium diselenide crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An acetonitrile solution having a concentration of 2.5 mg/ml of tetramethylammonium bromide and a concentration of 2.5 mg/ml of tetrabutylammonium bromide was used as an electrolyte. The applied voltage was set at 45V and the reaction time was 60min. In the intercalation process, cations of tetramethyl ammonium bromide and tetrabutyl ammonium bromide enter gaps of the rhenium diselenide crystals under the drive of negative potential, so that the interlayer spacing of the rhenium diselenide crystals is increased, and the volume of the rhenium diselenide crystals is greatly expanded. The expanded rhenium diselenide crystals were then rinsed several times with absolute ethanol to remove residual tetramethylammonium bromide and tetrabutylammonium bromide salts. Ultra-thin rhenium diselenide nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 2:0.5:7:0.5 of water, isopropanol, ethylene glycol and butanol are prepared into a mixed solvent, and 90 mg rhenium diselenide nano-sheets are dispersed in 4.910g of the mixed solvent, so that the rhenium diselenide aqueous ink can be obtained.
Example 9
The bulk black phosphorus crystals were fixed to the cathode of a double electrode cell using a graphite rod as the anode. An acetonitrile solution having a concentration of tetramethylammonium bromide of 2.5 mg/ml and a concentration of tetraheptylammonium bromide of 2.5 mg/ml was used as an electrolyte. The applied voltage was set to 50V and the reaction time was 60min. In the intercalation process, tetramethyl ammonium bromide and tetraheptyl ammonium bromide cations enter gaps of the black phosphorus crystals under the drive of negative potential, so that the interlayer spacing of the black phosphorus crystals is increased, and the volume of the black phosphorus crystals is greatly expanded. The swollen black phosphorus crystals were then rinsed several times with absolute ethanol to remove residual tetramethylammonium bromide and tetraheptylammonium bromide salts. Ultra-thin black phosphorus nanoplatelets (thickness less than 100nm, transverse dimension greater than 5 nm) can be obtained by ultrasonic exfoliating and centrifugation. The volume ratio is 2:1:1:6, preparing mixed solvent of water, ethanol, isopropanol and glycol, and dispersing 100. 100 mg black phosphorus nano-sheets in 4.900g of the mixed solvent to obtain the black phosphorus water-based ink.
Example 10
The large-block manganese sulfide-phosphide two-dimensional material crystal is fixed on the cathode of a double-electrode electrolytic cell, and a graphite rod is used as an anode. As the electrolyte, an acetonitrile solution having a concentration of 1mg/ml of tetramethylammonium bromide, a concentration of 1mg/ml of tetraethylammonium bromide, a concentration of 1mg/ml of tetrapropylammonium bromide, a concentration of 1mg/ml of tetrabutylammonium bromide, and a concentration of 1mg/ml of tetraheptylammonium bromide was used. The applied voltage was set to 5V and the reaction time was continued for 60min. In the intercalation process, cations of tetramethyl ammonium bromide, tetraethyl ammonium bromide, tetrapropyl ammonium bromide, tetrabutyl ammonium bromide and tetraheptyl ammonium bromide enter gaps of the manganese phosphide two-dimensional material crystals under the drive of negative potential, so that the interlayer spacing of the manganese phosphide two-dimensional material crystals is increased, and the volume is severely expanded. The expanded manganese sulfide two-dimensional material crystals were then rinsed several times with absolute ethanol to remove residual tetramethylammonium bromide, tetraethylammonium bromide, tetrapropylammonium bromide, tetrabutylammonium bromide and tetraheptylammonium bromide. Ultra-thin manganese sulfide and phosphorus two-dimensional material nano-sheets (with the thickness of less than 100nm and the transverse dimension of more than 5 nm) can be obtained through ultrasonic exfoliating and centrifugal treatment. The volume ratio is 7:2:0.5:0.5 of water, ethanol, isopropanol and ethylene glycol are prepared into a mixed solvent, and 100. 100 mg two-dimensional material nano sheets are dispersed in the mixed solvent of 4.900g, so that the manganese sulfide two-dimensional material water-based ink can be obtained.
The above description is not intended to limit the application to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, alternatives, and alternatives falling within the spirit and principles of the application as defined by the appended claims.
Claims (6)
1. A two-dimensional material aqueous ink is characterized in that the composition of the two-dimensional material aqueous ink is only an ink active component and a solvent; the active components of the ink are limited to the following two-dimensional material nano-sheets: molybdenum disulfide nanosheets, bismuth sulfide nanosheets, bismuth selenide nanosheets, bismuth telluride nanosheets, chromium sulfide copper nanosheets, indium copper selenide nanosheets, indium copper sulfide nanosheets, iron selenide nanosheets, gallium selenide nanosheets, germanium selenide nanosheets, hafnium disulfide nanosheets, hafnium diselenide nanosheets, indium selenide nanosheets, manganese sulfide nanosheets, manganese selenide nanosheets, molybdenum telluride nanosheets, tungsten sulfide nanosheets, tungsten molybdenum selenide nanosheets, niobium disulfide nanosheets, niobium diselenide nanosheets, nickel sulfide nanosheets, lead sulfide nanosheets one or more two-dimensional material nanoplates of a tin-palladium selenide nanoplate, a palladium diselenide nanoplate, a rhenium disulfide nanoplate, a rhenium diselenide nanoplate, a rhenium telluride nanoplate, a stannous sulfide nanoplate, a tin disulfide nanoplate, a stannous selenide nanoplate, a nickel-tantalum sulfide nanoplate, a nickel-tantalum selenide nanoplate, a nickel-tantalum telluride nanoplate, a tantalum diselenide nanoplate, a tantalum ditellulate, a titanium disulfide nanoplate, a titanium diselenide nanoplate, a vanadium diselenide nanoplate, a tungsten disulfide nanoplate, and a tungsten diselenide nanoplate, a tantalum sulfide nanoplate, a tungsten ditellulate, a zirconium disulfide nanoplate, a zirconium trisulfide nanoplate, a zirconium diselenide nanoplate, and a zirconium triselenide nanoplate; the solvent is water or an aqueous solution added with an organic solvent; the organic solvent is one or more selected from ethanol, isopropanol, butanol, ethylene glycol, acetonitrile and N, N-dimethylformamide;
the two-dimensional material water-based ink is characterized in that the two-dimensional material nano-sheet is prepared by the following method:
1) In a two-electrode electrochemical system, a two-dimensional material is fixed at the cathode of an electrolytic cell; using a graphite rod as an anode, and increasing the interlayer spacing and volume expansion of the two-dimensional material through electrolysis;
2) Carrying out ultrasonic stripping and centrifugal gradient screening by a centrifugal machine to obtain a two-dimensional material nano sheet;
the two-dimensional material water-based ink is characterized in that the electrolyte of the double-electrode electrochemical system in the step 1) can be selected from one or more of ethanol, propanol, butanol, acetonitrile, propionitrile, carbon tetrachloride and the like, wherein one or more macromolecular cations can be added, and tetramethyl ammonium bromide, tetraethyl ammonium bromide, tetrapropyl ammonium bromide, tetrabutyl ammonium bromide and tetraheptyl ammonium bromide or other macromolecular compounds can be selected; the voltage of the electrolysis in the step 1) is-0.01V to-100V, and the time is 1min to 72h; the rotational speed of the centrifuge in the step 2) is 1000rpm to 10000rpm.
2. The two-dimensional material water-based ink according to claim 1, wherein the mass fraction of the two-dimensional material nano-sheets in the ink is 0.01% -20%.
3. The two-dimensional material aqueous ink according to claim 1, wherein the two-dimensional material nanosheets are lamellar in morphology, have a thickness of less than 100nm and have a lateral dimension of greater than 5nm.
4. The aqueous ink of claim 1, wherein the two-dimensional material in step 1) is limited to only the following two-dimensional materials: molybdenum disulfide, bismuth sulfide, bismuth selenide, bismuth telluride, chromium germanium telluride, chromium phosphorus chromium copper, copper indium selenide, copper indium phosphorus sulfide, copper sulfide, iron phosphorus selenide, gallium selenide, germanium selenide, hafnium disulfide, hafnium diselenide, hafnium ditelluride, indium selenide, manganese phosphorus sulfide, manganese phosphorus selenide, molybdenum sulfur selenide, molybdenum ditelluride, molybdenum tungsten sulfide, molybdenum tungsten selenide, niobium disulfide, niobium diselenide, nickel phosphorus sulfide, lead tin sulfide, palladium tin selenide, palladium diselenide, rhenium disulfide, rhenium diselenide, rhenium telluride, stannous sulfide, tin disulfide, stannous selenide, tin diselenide, nickel tantalum sulfide, nickel tantalum selenide, nickel tantalum telluride, tantalum diselenide, tantalum ditelluride, titanium disulfide, titanium diselenide, vanadium diselenide, tungsten disulfide, and one or more two-dimensional materials of tungsten diselenide, tantalum tungsten sulfide, tungsten ditelluride, zirconium disulfide, zirconium trisulfide, zirconium diselenide, and zirconium triselede.
5. A method for preparing the two-dimensional material aqueous ink according to claim 1, comprising the following steps:
s1) dispersing two-dimensional material nano sheets in a solvent, and obtaining a mixed solution after ultrasonic dispersion;
s2) centrifugally screening the mixed solution at 1000-5000 rpm by adopting a centrifugal machine to obtain the two-dimensional material water-based ink.
6. Use of a two-dimensional aqueous ink according to claim 1 in integrated circuits.
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| CN110911177A (en) * | 2019-12-04 | 2020-03-24 | 苏州大学 | Preparation method of asymmetric molybdenum disulfide/graphene micro supercapacitor |
| CN113562766A (en) * | 2020-04-28 | 2021-10-29 | 中国科学院化学研究所 | Modified metal chalcogenide nanosheet and preparation method and application thereof |
| CN111534150A (en) * | 2020-05-11 | 2020-08-14 | 深圳大学 | Black phosphorus ink and preparation method and application thereof |
| CN112239613A (en) * | 2020-10-16 | 2021-01-19 | 武汉理工大学 | Two-dimensional inorganic material water-based ink for ink-jet printing and preparation method thereof |
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