CN109449755A - Vertical cavity surface emitting laser aoxidizes the preparation method of step and laser - Google Patents
Vertical cavity surface emitting laser aoxidizes the preparation method of step and laser Download PDFInfo
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- CN109449755A CN109449755A CN201910077367.6A CN201910077367A CN109449755A CN 109449755 A CN109449755 A CN 109449755A CN 201910077367 A CN201910077367 A CN 201910077367A CN 109449755 A CN109449755 A CN 109449755A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
The present invention provides the preparation method of a kind of vertical cavity surface emitting laser oxidation step and laser, and oxidation step preparation method includes: offer semiconductor substrate；In forming epitaxial layer in semiconductor substrate；In coating photoresist on epitaxial layer, if graphical photoresist, to expose the etching groove window of dry oxidation step, the pattern of the etching groove window of each oxidation step is identical；Etching forms oxidation step.Since the pattern of several etching groove windows is identical, when etching, the etching situation of each oxidation step is essentially identical, so sidewall shapes of several oxidation steps formed, angle and etching depth are essentially identical；In addition, using the etching groove window of identical pattern, and etching opening area is relatively small, processing procedure is easier to control, and the side wall interface of the oxidation step of formation, angle and etching depth are more evenly.Thus in subsequent progress sidewall oxidation, if the oxidation of dry oxidation step can be made more evenly.
Description
Technical field
The present invention relates to vertical cavity surface emitting laser manufacturing fields, more particularly to a kind of vertical cavity surface emitting laser
Aoxidize the preparation method of step and laser.
Background technique
Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) be with
Developed based on gallium arsenide semiconductor material, be different from LED(light emitting diode) and LD (Laser Diode, laser diode)
Equal other light sources, it is big for having small in size, round output facula, single longitudinal mode output, small, cheap, easy of integration threshold current
The advantages that area array, is widely used in the fields such as optic communication, light network, optical storage.
Vertical cavity surface emitting laser (VCSEL) is the new laser that a kind of vertical surface goes out light, with traditional edge emitting
The different structure of laser brings many advantages: remote, the near field distribution of circular symmetry make its coupling efficiency with optical fiber significantly
It improves, without the beam shaping system of complex and expensive, has confirmed that 90% can be greater than unexpectedly with the coupling efficiency of multimode fibre；
Cavity length is extremely short, its longitudinal mode spacing is caused to widen, and single longitudinal mode operation, dynamic modulation frequency can be realized in wider temperature range
Rate is high；Cavity volume reduces so that its sponta-neous emission factor is compared with the high several orders of magnitude of common end surface-emitting laser, this leads to many
Physical characteristic is greatly improved；Built-in testing can be realized on wafer, significantly reduce development cost；Light direction vertically serves as a contrast
Bottom can be easily carried out the integrated of high density two-dimensional array, realize higher power output, and because perpendicular to substrate
Direction on can parallel arranged multiple lasers, led so being very suitable to apply in parallel optical transmission and parallel optical interconnecting etc.
Domain, it is at an unprecedented rate applied successfully to single channel and parallel optical interconnection, with its very high ratio of performance to price, broadband with
Too net, obtained a large amount of application in high-speed data communication net；Most attracting is its manufacturing process and light emitting diode
(LED) compatible, the cost manufactured on a large scale is very low.
In terms of fiber optic communication, the market VCSEL develops on an unprecedented scale at present, and North America substitute higher-priced LD for gigabit,
The construction of 10000000000 ether data communication networks results in high speed VCSEL transceiver module demand and explosively increases.VCSEL is at other
Aspect also has good application prospect.In terms of light printing, the electronization of the optical scanning technology such as polygon mirror in laser printer
It is that unsolved project is gradually improved with the development of technology for many years.If using LED array, power consumption is
A bottleneck, and import VCSEL array and then can solve this problem.Using the mostly light of the thousands of VCSEL array format constituted
Beam will likely become the best way for replacing polygon scarnning mirror.Compared to past single laser tube, the array integrated morphology of VCSEL
The scanning of multirow can be carried out simultaneously.This, which can greatly improve the scanning speed of laser printer and accordingly extend it, uses the longevity
Life.In terms of light is shown, common display is constituted using Red Green Blue luminous tube, if it is possible to tool be made
There is the laser of Red Green Blue, then can apply in the technical field of giant display.In terms of illumination, VCSEL
Electro-optical efficiency reach 35% or more, if its wavelength can cover visible region from ultraviolet band, can expect it
It can also have a wide range of applications inside lighting area, realize white-light illuminating.For example, the indoor photograph of adjustable light intensity
It is bright, the background light of laptop, many aspects such as traffic light and outdoor illumination.In addition in gas detection, highly dense
Degree optical storage and 3D induction etc. are also hopeful to be applied.
The characteristics of VCSEL array is in an extremely small substrate by arranging the step-like of multiple random distributions
The mode of VCSEL point light source carries out laser projection, for example arranges multiple VCSEL point light sources on a semiconductor substrate, this
The launch window of the usually corresponding VCSEL device of VCSEL point light source, the launch window are normally provided as a simple circle
The shapes such as hole or square hole, a launch window are only capable of carrying a location information.
A crucial step is to form the oxidation of random array distribution or regular array distribution in the preparation method of VCSEL array
The step of step, prior art generally use lithography and etching to form the oxidation step, but the table top side of the oxidation step formed
Wall is uneven, while the etching depth for aoxidizing step is also uneven that subsequent oxidation technology is caused to go wrong or not
Uniformly, to keep the VCSEL array device performance to be formed inconsistent, yield is lower.
Therefore, how a kind of preparation method of vertical cavity surface emitting laser oxidation step and the preparation side of laser are provided
Method is necessary with solving the above problem in the presence of the prior art.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of vertical cavity surface emitting lasers
The preparation method for aoxidizing step and laser forms the oxidation step for aoxidizing the formation of step technique for solving in the prior art
Mesa side walls are uneven, or the etching depth of oxidation step is uneven, leads to the VCSEL array device performance being subsequently formed not
Unanimously, yield is lower.
In order to achieve the above objects and other related objects, the present invention provides a kind of oxidation platform of vertical cavity surface emitting laser
The preparation method of the preparation method of rank, the oxidation step includes at least step:
Semiconductor substrate is provided；
In forming epitaxial layer in the semiconductor substrate, the epitaxial layer successively include from bottom to top lower reflecting mirror, active layer and
Upper reflector has limitation oxide layer in the upper reflector；
In coating photoresist on the epitaxial layer, if the graphical photoresist is to define the etching groove window of dry oxidation step
Mouthful, the pattern of the etching groove window of each oxidation step is identical；
It is etched downwards by the etching groove window from the epi-layer surface, forms the oxidation step, remove the light
Photoresist.
Optionally, the etching groove window includes annular, hexagon or rectangular.
Further, the difference of the outer diameter and internal diameter of the annular is between 0.5 μm ~ 10 μm.
Optionally, several oxidation steps are distributed in hexagonal close-packed array.
Optionally, it is etched down to by the etching groove window from the epi-layer surface and is aoxidized more than the limitation
Layer.
Optionally, the semiconductor substrate includes N-type semiconductor substrate, and the lower reflecting mirror includes N-type reflecting mirror, described
Upper reflector includes p-type reflecting mirror.
Optionally, the epitaxial layer further includes buffer layer, the buffer layer be formed in the semiconductor substrate and it is described under
Between reflecting mirror.
Optionally, the upper reflector and the lower reflecting mirror include Bragg mirror.
Optionally, the epitaxial layer further includes the current extending being sequentially formed on the upper reflector and top electrode
Layer, and before forming the etching groove window, the graphical upper electrode layer makes the upper electrode layer be formed in the oxygen
Change on step.
It further, further include on the current extending and the upper electrode layer after the graphical upper electrode layer
Upper formation first medium layer.
Optionally, the thickness of the epitaxial layer is between 7 μm ~ 11 μm, by the etching groove window from the epitaxial layer
The etching depth that surface etches downwards is between 2 μm ~ 6 μm.
The present invention also provides a kind of preparation method of vertical cavity surface emitting laser, the preparation method of the laser is at least
Comprising steps of
Form described in any item oxidation steps as described above；
Step is aoxidized described in lateral oxidation, forms electric light limiting layer；
Second dielectric layer is formed in the side wall of the oxidation step；
Top electrode region is manifested, the top electrode region is formed on the oxidation step；
Top electrode is formed in the top electrode region, the top electrode includes upper electrode layer；
Lower electrode is formed in the semiconductor substrate back side.
Optionally, several oxidation steps are distributed in hexagonal close-packed array, and the oxidation step includes the first oxidation platform
Rank and the second oxidation step, wherein the periphery on the first oxidation step forms the top electrode, the second oxidation step
On periphery do not form the top electrode.
Optionally, the top electrode further includes that the top electrode being formed on the upper electrode layer draws layer.
It optionally, further include being thinned, polishing the semiconductor before the Yu Suoshu semiconductor substrate back side forms the lower electrode
Substrate.
Optionally, using wet process oxidation technology, the electric light limiting layer is formed.
As described above, the preparation method of vertical cavity surface emitting laser oxidation step and laser of the invention, is forming
Aoxidize step method in, etching formed oxidation step when, no matter the arrangement of device luminous point, due to several etching groove windows
Mouthful pattern it is identical, when etching, (dosage including etching gas influences etching effect for the etching situation of each oxidation step
Factor etc.) it is essentially identical, so the side wall interface and shape and the basic phase of etching depth of several oxidation steps formed
Together；In addition, using the etching groove window of identical pattern, and etch ratio (area for the needing to etch/epitaxial layer gross area) phase
To smaller, processing procedure is easier to control, and the side wall interface and shape and etching depth of the oxidation step of formation are more evenly.And it generates
By-product it is less, be convenient to clean, without being adhered to influencing subsequent oxidation technology on side wall.Above characteristic is in subsequent progress
When sidewall oxidation, if the oxidation of dry oxidation step can be made more evenly, so that VCSEL array device performance and yield are effectively improved,
With the uniformity on wafer.
Detailed description of the invention
Fig. 1 is shown as the flow chart of the oxidation step preparation method of vertical cavity surface emitting laser of the invention.
Fig. 2 is shown as executing the structural schematic diagram of step S11 in Fig. 1 in the oxidation step preparation method of embodiment 1.
Fig. 3 a ~ 3b is shown as executing the structural schematic diagram of step S12 in Fig. 1 in the oxidation step preparation method of embodiment 1.
Fig. 4 a ~ 4b is shown as executing the structural schematic diagram of step S13 in Fig. 1 in the oxidation step preparation method of embodiment 1.
Fig. 5 a ~ 5b is shown as executing the structural schematic diagram of step S14 in Fig. 1 in the oxidation step preparation method of embodiment 1.
Fig. 5 c ~ 5f is shown as the top view of the oxidation step structure formed in the oxidation step preparation method of embodiment 1.
Fig. 5 g ~ Fig. 5 h is shown with the oxidation step preparation method preparation of embodiment 1 and uses existing oxidation step system
The structural schematic diagram of the oxidation step of Preparation Method preparation.
Fig. 6 a ~ 6c is shown as executing the structural schematic diagram of step S12 in Fig. 1 in the oxidation step preparation method of embodiment 2.
Fig. 7 is shown as executing the structural schematic diagram of step S13 in Fig. 1 in the oxidation step preparation method of embodiment 2.
Fig. 8 is shown as executing the structural schematic diagram of step S14 in Fig. 1 in the oxidation step preparation method of embodiment 2.
Fig. 9 is shown as the flow chart of vertical cavity surface emitting laser preparation method of the invention.
Figure 10 is shown as executing the structural schematic diagram of step S22 in Fig. 9 in the laser preparation method of embodiment 3.
Figure 11 is shown as executing the structural schematic diagram of step S23 in Fig. 9 in the laser preparation method of embodiment 3.
Figure 12 is shown as executing the structural schematic diagram of step S24 in Fig. 9 in the laser preparation method of embodiment 3.
Figure 13 is shown as executing the structural schematic diagram of step S25 in Fig. 9 in the laser preparation method of embodiment 3.
Figure 14 a ~ 14b is shown as executing the structural schematic diagram of step S26 in Fig. 9 in the laser preparation method of embodiment 3.
Figure 15 is shown as executing the structural schematic diagram of step S22 in Fig. 9 in the laser preparation method of embodiment 4.
Figure 16 is shown as executing the structural schematic diagram of step S23 in Fig. 9 in the laser preparation method of embodiment 4.
Figure 17 is shown as executing the structural schematic diagram of step S24 in Fig. 9 in the laser preparation method of embodiment 4.
Figure 18 is shown as executing the structural schematic diagram of step S25 in Fig. 9 in the laser preparation method of embodiment 4.
Figure 19 a ~ 19b is shown as executing the structural schematic diagram of step S26 in Fig. 9 in the laser preparation method of embodiment 4.
Component label instructions
10 semiconductor substrates, 11 epitaxial layers, 110 lower reflecting mirrors, 111 active layers, 112 upper reflectors, 113 limitation oxidations
Layer, 114 buffer layers, 115 current extendings, 116 upper electrode layers, 117 first medium layers, 12 photoresists, 13 etching ditches
Slot window, 14 oxidation steps, 15 electric light limiting layers, 16 second dielectric layer, 17 top electrode regions, 18 top electrodes, on 181
Electrode extraction layer, 19 lower electrodes, the outer diameter of W annular and the differences of internal diameter, the thickness of D1 epitaxial layer, D2 etching depth, S11 ~
S14 step, S21 ~ S26 step.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1 to Figure 19 b.It should be noted that diagram provided in the present embodiment only illustrates in a schematic way
Basic conception of the invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
As shown in Figure 1, the present invention provides a kind of preparation method of the oxidation step of vertical cavity surface emitting laser, the oxygen
The preparation method for changing step includes at least step:
S11 provides semiconductor substrate；
Form epitaxial layer in S12, Yu Suoshu semiconductor substrate, the epitaxial layer successively includes lower reflecting mirror from bottom to top, active
Layer and upper reflector have limitation oxide layer in the upper reflector；
Photoresist is coated on S13, Yu Suoshu epitaxial layer, if the graphical photoresist is to define the etching ditch of dry oxidation step
The pattern of slot window, the etching groove window of each oxidation step is identical；
S14 is etched downwards by the etching groove window from the epi-layer surface, forms the oxidation step, removes institute
State photoresist.
The present invention is formed in the method for oxidation step, when etching forms oxidation step, the shape of several etching groove windows
Looks are identical, when etching, the etching situation (dosage, the factor for influencing etching effect including etching gas etc.) of each oxidation step
It is essentially identical, so the side wall interface of several oxidation steps formed, angle and etching depth are essentially identical；In addition,
Using the etching groove window of identical pattern, and etch ratio (that is: the epitaxial layer area/epitaxial layer gross area for needing to etch) phase
To smaller, processing procedure is easier to control, and the sidewall shape and etching depth of the oxidation step of formation are more evenly.And the by-product generated
Object is less, is convenient to clean, without being adhered to influencing subsequent oxidation technology on side wall.Above characteristic is in subsequent progress side wall oxygen
When change, if the oxidation of dry oxidation step can be made more evenly, to effectively improve VCSEL array device performance and yield, He Jing
The uniformity on circle.
The etching groove window is not limited in the present invention, it can be various rules shape or irregular shape,
Such as: rectangular, round, diamond shape, polygon etc..
Embodiment 1
The preparation side of the oxidation step of the vertical cavity surface emitting laser of the present embodiment 1 is elaborated below in conjunction with attached drawing
Method.
It is illustrated in the present embodiment using the etching groove window as ring-type.
As shown in Figures 1 and 2, step S11 is carried out first, and semiconductor substrate 10 is provided.
The semiconductor substrate 10 can be the material for arbitrarily suitably forming vertical cavity surface emitting laser.In the present embodiment
Select the material of the semiconductor substrate 10 for GaAs (GaAs).
The semiconductor substrate 10 can be the semiconductor substrate of n-type doping, be also possible to the semiconductor lining of p-type doping
Bottom, doping can reduce the contact resistance of Ohmic contact between the electrode being subsequently formed and semiconductor substrate.It is selected in the present embodiment
Selecting the semiconductor substrate 10 is n-type doping semiconductor substrate.
As shown in Fig. 1 and Fig. 3 a ~ 3b, step S12 is then carried out, forms epitaxial layer 11 in Yu Suoshu semiconductor substrate 10,
The epitaxial layer 11 successively includes lower reflecting mirror 110, active layer 111 and upper reflector 112, the upper reflector from bottom to top
There is limitation oxide layer 113, as shown in Figure 3a in 112.
The limitation oxide layer 113 in the present embodiment refers to after forming oxidation step, carries out to oxidation step lateral
When oxidation, this layer limitation oxide layer 113 can be oxidized to form the electric light limiting layer of limitation electric current and light aperture.
As an example, the lower reflecting mirror 110 includes N-type reflecting mirror, the upper reflector 112 includes p-type reflecting mirror.Compared with
Goodly, the N-type reflecting mirror can be the Bragg mirror DBR(N type-DBR of N-type), the p-type reflecting mirror can be p-type
Bragg mirror DBR(P type-DBR), the p-type-DBR and N-type-DBR are quarter-wave GaAs and AlGaAs weeks
Phase structure composition.
As an example, the active layer 111 is made of InGaAs/GaAs strained quantum well.
As an example, forming the epitaxial layer 11 using chemical vapor deposition process (MOCVD).
As an example, as shown in Figure 3b, the epitaxial layer 11 further includes buffer layer 114, and the buffer layer 114 is formed in institute
It states between semiconductor substrate 10 and the lower reflecting mirror 110.The buffer layer 114 can be released effectively semiconductor substrate and lower anti-
Penetrate the stress between mirror and dislocation filtering.
As an example, the thickness D1 of the epitaxial layer 11 is between 7 μm ~ 11 μm.
As shown in Fig. 1 and Fig. 4 a ~ 4b, step S13 is then carried out, coats photoresist 12, figure on Yu Suoshu epitaxial layer 11
If changing the photoresist 12 with the etching groove window 13 for the dry oxidation step out of developing, the etching of each oxidation step
The pattern of trench openings 13 is identical.
As shown in Figure 5 c, preferably, the etching groove window 13 is annular, the system of step is aoxidized described in the present embodiment
Standby process is also to be illustrated by taking 13 annular of etching groove window as an example, the oxygen that annular etching groove window is formed
Change step be it is cylindric, be easily formed circular light hole.The outer diameter of the annular and the difference W of internal diameter between 0.5 μm ~ 10 μm,
More preferably, the difference W of the outer diameter and internal diameter of the annular is between 4 μm ~ 7 μm.But it is not intended to limit the etching groove window 13
It can be other shapes, for example, hexagon as depicted in fig. 5e, as shown in figure 5f rectangular etc..
In the present embodiment, etching groove window 13 is formed using photoetching process, and in the graphical photoresist 12, make
The pattern of the etching groove window 13 of each oxidation step formed is identical, and when etching forms oxidation step, no matter device shines
The arrangement of point only removes the epitaxial film materials below etching groove window 13, in this way, for each oxidation step,
Its etching situation is essentially identical, and etching basic condition described here includes the dosage of etching gas, the factor for influencing etching effect
Etc., so the side wall interface of several oxidation steps formed and etching depth D2 are essentially identical.It as shown in figure 5h, is use
The present embodiment preparation method preparation oxidation step 14 structural schematic diagram, after the present embodiment step S14, in figure
In semiconductor substrate formed there are three aoxidize step, respectively 14(1), 14(2), 14(3), and it is adjacent two oxidation step between
Interval is sequentially increased, and the etching depth D2 of each oxidation step of acquisition is essentially identical, as shown in fig. 5g, for using the prior art
When middle formation oxidation step, by epitaxial layer whole removal three oxidation steps of formation, respectively 14(1 around oxidation step), 14
(2), 14(3), and the interval between adjacent two oxidations step is sequentially increased, but the etching depth D2 of each oxidation step of acquisition
It is sequentially increased, Fig. 5 g and Fig. 5 h, which are only exemplary, shows three oxidation steps, and those skilled in the art can be it can be appreciated that half
Several oxidation steps are generally will form on conductor substrate, number is arranged according to different demands, so herein cannot
To be simply formed with the protection scope that three oxidation steps limit this method in semiconductor substrate.In addition, in the present embodiment, using phase
With the etching groove window 13 of pattern, and etching ratio (that is, it needs to area/epitaxial layer gross area of etching) is relatively small, makes
The processing procedure of etching is easier to control, thus side wall interface, angle and the etching depth of the oxidation step array formed are also more evenly.
Furthermore using the oxidation step preparation method of the present embodiment, the by-product for etching generation is less, and easy to clean, by-product is not easy
The oxidation technology for influencing subsequent oxidation step is attached on oxidation mesa sidewall.
As shown in Fig. 1 and Fig. 5 a ~ 5b, step S14 is then carried out, by the etching groove window 13 from the epitaxial layer
11 surfaces etch downwards, form the oxidation step 14, remove the photoresist 12.
As an example, forming the oxidation step 14 using dry etch process.
As an example, being etched down to from 11 surface of epitaxial layer more than the limit by the etching groove window 13
Oxygenerating layer 113.Preferably, being etched down to by the etching groove window 13 from 11 surface of epitaxial layer described lower anti-
It penetrates in 110 layers of mirror.
As an example, when the thickness D1 of the epitaxial layer 11 is between 7 μm ~ 11 μm, by the etching groove window 13
The etching depth D2 etched downwards from 11 surface of epitaxial layer is between 2 μm ~ 6 μm.
It can be random array (as shown in Figure 5 c) in the oxidation step 14 formed in the semiconductor substrate 10,
It can be regular array, as fig 5d, the oxidation step 14 is distributed in hexagonal close-packed array.When the oxidation step 14 is
When regular array, such as need to form pseudorandom arrays goes out light pattern (one of which of random dot matrix), can be by the oxidation
Step 14, which divides, aoxidizes step for the first oxidation step and second, and selection does not form electrode on the second oxidation step, so that
It becomes virtual oxidation step without emergent light, and selection forms electrode in the first oxidation step, luminous to become
Pixel.Since the technique of the oxidation step 14 of formation rule array is easier to control, so several oxidation platforms formed
The consistency and uniformity of rank 14 more preferably, and will form the light pattern out of pseudorandom arrays, as long as in the regular array oxygen of formation
To change in step, the oxidation step setting electrode that selection needs to light, the oxidation step for not needing to light is not provided with electrode, this
Light-out effect more preferably pseudorandom oxidation array can be obtained in sample.
What needs to be explained here is that being to be etched to the lower reflecting mirror 110 with the etching depth D2 in Fig. 5 c and Fig. 5 d
It is illustrated in layer for example.
As an example, as fig 5d, when forming the oxidation step 14 of hexagonal close-packed array distribution, first with described
Etching groove window 13 etches the epitaxial layer 11, until target etch depth, in addition also needs to etch again described in tangent three
The epitaxial layer 11 between step 14 is aoxidized, until target etch depth.
Embodiment 2
The preparation side of the oxidation step of the vertical cavity surface emitting laser of the present embodiment 2 is elaborated below in conjunction with attached drawing
Method.
It is equally illustrated using the etching groove window as ring-type in the present embodiment.
The preparation method and the basic phase of embodiment 1 of the oxidation step of vertical cavity surface emitting laser provided in this embodiment
Together, specific difference is:
As shown in Fig. 1 and Fig. 6 a ~ 6c, when carrying out step S12, the epitaxial layer 11 formed in Yu Suoshu semiconductor substrate 10, also
It is as shown in Figure 6 a including the current extending 115 being sequentially formed on the upper reflector 112 and upper electrode layer 116(), and
It is formed before the etching groove window 13, the graphical upper electrode layer 116 is formed in the upper electrode layer 116 described
It aoxidizes on step (as shown in Figure 6 b).A part of the subsequent top electrode as each oxidation step of the upper electrode layer 116.By
It is comparatively small in each oxidation step dimension, so difficulty is larger, shape if re-forming top electrode after forming oxidation step
At top electrode quality it is relatively poor, so in the present embodiment formed aoxidize step before first on entire epitaxial layer formed on
Etching precision can be improved in electrode, and the top electrode quality being subsequently formed is preferable, improves product yield, and what is be formed simultaneously described powers on
Pole can also be used as the alignment mark of the techniques such as subsequent photoetching, etching.
As an example, the material of the upper electrode layer 116 can be golden, platinum or it can be with 112 shape of upper reflector
At the metal of Ohmic contact.
It is formed as an example, the current extending 115 can be by being adulterated in the upper electrode layer 116, it can also
To be redeposited formation.
As an example, further including in the current extending 115 and institute after forming the patterned upper electrode layer 116
It states and forms first medium layer 117(on upper electrode layer 116 as fig. 6 c).The first medium layer 117 is for protecting subsequent system
Injury of the journey to the upper electrode layer 116.The material of the first medium layer 117 can be silicon nitride (SiN), silica
(SiO2) or other isolation protective materials.
As shown in Fig. 1 and Fig. 7, when carrying out step S13, photoresist 12, the photoetching are coated on Yu Suoshu epitaxial layer 11
Glue 12 need to cover the upper electrode layer 116.
As shown in Fig. 1 and Fig. 8, after carrying out step S14, the top electrode is formed on the oxidation step 14 of formation
Layer 116.
As shown in figure 9, the present invention also provides a kind of preparation method of vertical cavity surface emitting laser, the system of the laser
Preparation Method includes at least following steps:
Form the oxidation step of the preparation method preparation of the oxidation step using vertical cavity surface emitting laser provided by the invention；
Oxide layer is limited described in lateral oxidation, forms electric light limiting layer；
Second dielectric layer is formed in the side wall of the oxidation step；
Top electrode region is manifested, the top electrode region is formed on the oxidation step；
Top electrode is formed in the top electrode region, the top electrode includes upper electrode layer；
Lower electrode is formed in the semiconductor substrate back side.
Embodiment 3
The preparation method of the vertical cavity surface emitting laser of the present embodiment, and the present embodiment are elaborated below in conjunction with attached drawing
In oxidation step be using in embodiment 1 preparation method be made.
As shown in Fig. 9 and Fig. 5 b, progress step S21 first forms oxygen made from preparation method as described in example 1 above
Change step 14.
As shown in FIG. 9 and 10, step S22 is then carried out, oxidation step 14, forms electric light limiting layer described in lateral oxidation
15。
As an example, forming the electric light limiting layer 15 using wet process oxidation technology.
When aoxidizing step 14 described in lateral oxidation, mainly the limitation oxide layer 113 in the oxidation step 14 is carried out
Oxidation, to form the electric light limiting layer 15.
Since the side wall interface, angle and etching depth for aoxidizing step prepared by the preparation method using embodiment 1 is basic
It is identical, and etch the by-product generated and be less prone to wall built-up (i.e. etch by-products are not easy on the side wall for being attached to oxidation step) now
As so, if the oxidation that can make dry oxidation step is more evenly, being based on electricity when carrying out the sidewall oxidation step S22 of the present embodiment
Light limiting layer effectively increases VCSEL so aoxidizing the oxidation uniformity of step to the restriction effect of oxidation step light hole diameter
Array goes out the uniformity of light, to improve VCSEL array device performance and yield, and the uniformity on wafer.
As shown in Fig. 9 and Figure 11, step S23 is then carried out, forms second dielectric layer in the side wall of the oxidation step 14
16。
As an example, using chemical deposition process in the side wall of the oxidation step 14 and the surface shape of the epitaxial layer 11
At the second dielectric layer 16.The second dielectric layer 16 not only can protect the electric light limiting layer 15 but also can effectively be electrically isolated
Adjacent oxidation step 14.
As an example, the material of the second dielectric layer 16 can be silicon nitride (SiN), silica (SiO2) or other are absolutely
Edge protection materials.
As shown in Fig. 9 and Figure 12, step S24 is then carried out, top electrode region 17,17 shape of top electrode region are manifested
On oxidation step 14 described in Cheng Yu.
As an example, top electrode need to be prepared using the graphical second dielectric layer 16 of lithographic etch process to manifest
The top electrode region 17.
As shown in Fig. 9 and Figure 13, step S25 is then carried out, forms top electrode 18 in Yu Suoshu top electrode region 17.
As shown in Fig. 9 and Figure 14 a ~ 14b, step S26 is then carried out, 10 back side of Yu Suoshu semiconductor substrate forms lower electrode
19。
As an example, as shown in figures 14a, being first thinned, polishing the back side of the semiconductor substrate 10, then partly led in described
The back side of body substrate 10 forms the lower electrode 19, as shown in fig. 14b.
Embodiment 4
The preparation method of the vertical cavity surface emitting laser of the present embodiment, and the present embodiment are elaborated below in conjunction with attached drawing
In oxidation step be using in embodiment 2 preparation method be made.
The preparation method of vertical cavity surface emitting laser provided in this embodiment is substantially the same manner as Example 3, specific different
It is:
As can be seen from figures 8 and 9, when carrying out step S21, the upper electrode layer 116 has been formd on the oxidation step 14.
As shown in Fig. 9 and Figure 15, when carrying out step S22, to the oxidation step for being formed with the upper electrode layer 116
14 carry out lateral oxidation, form electric light limiting layer 15.
As shown in Fig. 9 and Figure 16, when carrying out step S23, Yu Suoshu is formed with the oxidation of the upper electrode layer 116
The side wall of step 14 forms the second dielectric layer 16.
As an example, using chemical deposition process in the oxidation side wall of step 14, the epitaxial layer 11 surface and
The surface of the upper electrode layer 116 forms the second dielectric layer 16.
As shown in Fig. 9 and Figure 17, when carrying out step S24, after appearing the top electrode region 17, the top electrode region
The upper electrode layer 116 is inside formed.
As shown in Fig. 9 and Figure 18, when carrying out step S25, due to being formed on described in the top electrode region 17
Electrode layer 116, it is advantageous to, layer 181 can be drawn in forming top electrode on the upper electrode layer 116, to form top electrode 18.
Finally, carrying out step S26,10 back side of Yu Suoshu semiconductor substrate forms lower electricity as shown in Fig. 9 and Figure 19 a ~ 19b
Pole 19.
As an example, as shown in figure 19a, being first thinned, polishing the back side of the semiconductor substrate 10, then partly led in described
The back side of body substrate 10 forms the lower electrode 19, as shown in fig. 19b.
In conclusion the preparation method of vertical cavity surface emitting laser oxidation step and laser of the invention, is forming
In the method for aoxidizing step, when etching forms oxidation step, the pattern of several etching groove windows is identical, when etching, each
The etching situation (dosage, the factor for influencing etching effect including etching gas etc.) for aoxidizing step is essentially identical, so being formed
Several described oxidation side wall interfaces of steps, angle and etching depth it is essentially identical；In addition, using the etching of identical pattern
Trench openings, and etching ratio (that is: the epitaxial layer area/epitaxial layer gross area for needing to etch) is relatively small, processing procedure is easier
Control, the sidewall shape and etching depth of the oxidation step of formation are more evenly.And the by-product generated is less, is convenient to clean,
Without being adhered to influencing subsequent oxidation technology on side wall.Above characteristic can make several oxygen in subsequent progress sidewall oxidation
Change step oxidation more evenly, to effectively improve VCSEL array device performance and yield, and the uniformity on wafer.Institute
With the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (16)
1. a kind of preparation method of the oxidation step of vertical cavity surface emitting laser, which is characterized in that the system of the oxidation step
Preparation Method includes at least step:
Semiconductor substrate is provided；
In forming epitaxial layer in the semiconductor substrate, the epitaxial layer successively include from bottom to top lower reflecting mirror, active layer and
Upper reflector；
In coating photoresist on the epitaxial layer, if the graphical photoresist is to define the etching groove window of dry oxidation step
Mouthful, the pattern of the etching groove window of each oxidation step is identical；
It is etched downwards by the etching groove window from the epi-layer surface, forms the oxidation step, remove the light
Photoresist.
2. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating etching groove window includes annular, hexagon or rectangular.
3. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 2, it is characterised in that: institute
The outer diameter of annular and the difference of internal diameter are stated between 0.5 μm ~ 10 μm.
4. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: if
The oxidation step is done to be distributed in hexagonal close-packed array.
5. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating in upper reflector has limitation oxide layer, is etched down to by the etching groove window from the epi-layer surface and is more than
The limitation oxide layer.
6. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating semiconductor substrate includes N-type semiconductor substrate, and the lower reflecting mirror includes N-type reflecting mirror, and the upper reflector includes that p-type is anti-
Penetrate mirror.
7. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating epitaxial layer further includes buffer layer, and the buffer layer is formed between the semiconductor substrate and the lower reflecting mirror.
8. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating upper reflector and the lower reflecting mirror includes Bragg mirror.
9. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that: institute
Stating epitaxial layer further includes the current extending and upper electrode layer being sequentially formed on the upper reflector, and is forming the etching
Before trench openings, the graphical upper electrode layer is formed in the upper electrode layer on the oxidation step.
10. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 9, it is characterised in that:
It further include in forming first medium layer on the current extending and on the upper electrode layer after the graphical upper electrode layer.
11. the preparation method of the oxidation step of vertical cavity surface emitting laser according to claim 1, it is characterised in that:
The thickness of the epitaxial layer is between 7 μm ~ 11 μm, the quarter etched downwards by the etching groove window from the epi-layer surface
Depth is lost between 2 μm ~ 6 μm.
12. a kind of preparation method of vertical cavity surface emitting laser, which is characterized in that the preparation method of the laser is at least wrapped
Include step:
Form the oxidation step as described in any one of claims 1 to 11；
Step is aoxidized described in lateral oxidation, forms electric light limiting layer；
Second dielectric layer is formed in the side wall of the oxidation step；
Top electrode region is manifested, the top electrode region is formed on the oxidation step；
Top electrode is formed in the top electrode region, the top electrode includes upper electrode layer；
Lower electrode is formed in the semiconductor substrate back side.
13. the preparation method of vertical cavity surface emitting laser according to claim 12, it is characterised in that: several oxygen
Change step to be distributed in hexagonal close-packed array, the oxidation step includes the first oxidation step and the second oxidation step, wherein described
Periphery on first oxidation step forms the top electrode, and the periphery on the second oxidation step does not form the top electrode.
14. the preparation method of vertical cavity surface emitting laser according to claim 12, it is characterised in that: the top electrode
It further include that the top electrode being formed on the upper electrode layer draws layer.
15. the preparation method of vertical cavity surface emitting laser according to claim 12, it is characterised in that: partly led in described
It further include being thinned, polishing the semiconductor substrate before the body substrate back side forms the lower electrode.
16. the preparation method of vertical cavity surface emitting laser according to claim 12, it is characterised in that: use wet process oxygen
Chemical industry skill forms the electric light limiting layer.
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| CN110137802A (en) * | 2019-05-13 | 2019-08-16 | 苏州长光华芯半导体激光创新研究院有限公司 | A kind of small spacing solid matter vertical cavity surface emitting laser and preparation method thereof |
| CN110416874A (en) * | 2019-09-18 | 2019-11-05 | 常州纵慧芯光半导体科技有限公司 | A kind of preparation method of small spacing vertical cavity surface emitting laser arrays |
| CN110649466A (en) * | 2019-11-26 | 2020-01-03 | 常州纵慧芯光半导体科技有限公司 | VCSEL array, manufacturing method, flat top far field generating method and lighting module |
| CN111211481A (en) * | 2020-01-16 | 2020-05-29 | 常州纵慧芯光半导体科技有限公司 | VCSEL device with back positive and negative electrodes and preparation method thereof |
| CN111834891A (en) * | 2020-09-17 | 2020-10-27 | 山东元旭光电股份有限公司 | Low-temperature oxidation method of VCSEL chip |
| CN113410757A (en) * | 2021-06-16 | 2021-09-17 | 厦门市三安集成电路有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
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| CN110880674A (en) * | 2019-11-25 | 2020-03-13 | 江苏华兴激光科技有限公司 | High-order mode selection suppression type vertical surface emitting laser and preparation method thereof |
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| JP3422413B2 (en) * | 1999-04-09 | 2003-06-30 | 日本電気株式会社 | Surface emitting laser array and method of manufacturing the same |
| JP4062983B2 (en) * | 2002-06-20 | 2008-03-19 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser and manufacturing method thereof |
| GB0302580D0 (en) * | 2003-02-05 | 2003-03-12 | Univ Strathclyde | MICRO LEDs |
| US7949024B2 (en) * | 2009-02-17 | 2011-05-24 | Trilumina Corporation | Multibeam arrays of optoelectronic devices for high frequency operation |
| JP5515767B2 (en) * | 2009-05-28 | 2014-06-11 | 株式会社リコー | Surface emitting laser element manufacturing method, surface emitting laser element, surface emitting laser array, optical scanning apparatus, and image forming apparatus |
| JP6176298B2 (en) * | 2015-09-03 | 2017-08-09 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser array and method for manufacturing surface emitting semiconductor laser array |
| US10250012B2 (en) * | 2016-06-02 | 2019-04-02 | Lumentum Operations Llc | Variable emission area design for a vertical-cavity surface-emitting laser array |
| CN107404066B (en) * | 2017-07-25 | 2019-06-04 | 厦门大学 | The preparation method of all dielectric film dbr structure gallium nitride surface emitting laser |
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2019
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| CN111211481A (en) * | 2020-01-16 | 2020-05-29 | 常州纵慧芯光半导体科技有限公司 | VCSEL device with back positive and negative electrodes and preparation method thereof |
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| CN111834891A (en) * | 2020-09-17 | 2020-10-27 | 山东元旭光电股份有限公司 | Low-temperature oxidation method of VCSEL chip |
| CN113410757A (en) * | 2021-06-16 | 2021-09-17 | 厦门市三安集成电路有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN116387980A (en) * | 2023-06-07 | 2023-07-04 | 深圳市柠檬光子科技有限公司 | Vertical cavity surface emitting laser and electronic device |
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| CN110233422A (en) | 2019-09-13 |
| CN110233422B (en) | 2021-05-28 |
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