CN109449748A - A kind of semiconductor devices and its manufacturing method - Google Patents
A kind of semiconductor devices and its manufacturing method Download PDFInfo
- Publication number
- CN109449748A CN109449748A CN201811596479.4A CN201811596479A CN109449748A CN 109449748 A CN109449748 A CN 109449748A CN 201811596479 A CN201811596479 A CN 201811596479A CN 109449748 A CN109449748 A CN 109449748A
- Authority
- CN
- China
- Prior art keywords
- semiconductor devices
- conductive material
- semiconductor laser
- devices according
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Abstract
This application discloses a kind of semiconductor devices and its manufacturing methods, the semiconductor devices includes: at least one semiconductor laser, it is with Vertical Launch device and at least one pumping radiation source, they are monolithically integrated on common substrate side by side, the substrate is the complex and conducting element collectively formed by insulating materials and conductive material, and the conducting element is contacted with the semiconductor laser, and there is mounting surface, the mounting surface is arranged on supporting mass.The invention has the advantages that realizing simply, all substrates can be made to unified standard component, preparation process greatly simplifies, and manufacturing process only needs two steps, and material variety is few, and packaging fixture requirement is low, therefore Material Cost and cost of labor are saved significantly.The anti-fatigue ability and thermal stability of product can be enhanced, the final life and reliability for improving product, the final yield rate for improving individual laser package.
Description
Technical field
The present invention relates to a kind of semiconductor devices and its manufacturing methods.
Background technique
CN107749561A discloses a kind of capsulation structure for semiconductor laser and preparation method thereof, and wherein structure includes heat
It is heavy, the solder layer being formed on heat sink first surface, and the semiconductor laser by solder layer welding on the first surface
The ridge area of tube core, semiconductor laser tube core is arranged close to solder layer；Wherein, a groove is offered on first surface, groove is long
It is parallel with ridge section length direction to spend direction；And the vertical direction of groove is arranged in ridge area.By being opened on a heat sink surface
If a groove, semiconductor laser tube core are fixed by solder and heat sink welding, and the ridge area of semiconductor laser tube core exists
The vertical direction of groove can prevent solder from polluting tube core because of melted by heat, together using this capsulation structure for semiconductor laser
When guarantee the good heat dissipation of mirror surface.But its significant drawback is: complex process, at high cost, wants to sealed in unit and operator
Ask high, whole process is artificial and equipment investment is high.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of semiconductor devices and its manufacturing methods, make structure
Simply, the technical issues of can effectively solving low device yield in existing structure scheme, complex process.
To achieve the goals above, a kind of the technical solution adopted by the present invention are as follows: semiconductor devices, which is characterized in that packet
It includes:
At least one semiconductor laser, with Vertical Launch device and at least one pumping radiation source, they are single side by side
It being integrated into piece on common substrate, the substrate is the complex collectively formed by insulating materials and conductive material, and
Conducting element, the conducting element are contacted with the semiconductor laser, and have mounting surface, the peace
Dress face is arranged on supporting mass.
Another object of the present invention is to provide a kind of manufacturing methods of semiconductor devices characterized by comprising
A kind of semiconductor laser is provided, the semiconductor laser is respectively provided with Vertical Launch device and at least one pumping
Radiation source, their monolithics are abreast integrated on common substrate, and the substrate is by insulating materials and the common structure of conductive material
At complex；
Conductive sheet is provided, the conducting element is contacted with the semiconductor laser, and is arranged for installing
Mounting surface on supporting mass.
The invention has the benefit that
It realizes simple, comprising: at least one semiconductor laser, with Vertical Launch device and at least one pumping radiation
Source, they are monolithically integrated on common substrate side by side, and the substrate is collectively formed by insulating materials and conductive material
Complex and conducting element, the conducting element are contacted with the semiconductor laser, and have mounting surface, institute
Mounting surface is stated to be arranged on supporting mass.All substrates can be made to unified standard component, preparation process is greatly simplified, made
Journey only needs two steps, and material variety is few, and packaging fixture requirement is low, therefore Material Cost and cost of labor are saved significantly.It can enhancing production
The anti-fatigue ability and thermal stability of product, the final life and reliability for improving product, the final finished product for improving individual laser package
Rate.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the manufacturing method flow chart of semiconductor devices of the invention.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described
Description is being not intended to limit the scope of the present application for the purpose of the rule for illustrating the application.The protection scope of the application
As defined by the appended claims.
Please refer to Fig. 1, a kind of semiconductor devices of the invention, comprising: at least one semiconductor laser has vertical
Transmitter and at least one pumping radiation source, they are monolithically integrated on common substrate side by side, and the substrate is by insulating
The complex and conducting element that material and conductive material collectively form, the conducting element and the semiconductor laser into
Row contact, and there is mounting surface, the mounting surface is arranged on supporting mass.
In one embodiment, the bottom of the complex is insulating materials.
In one embodiment, the form that the complex is laminated by multi-layer insulation and multilayer conductive material with interval
It constitutes.
In one embodiment, the conductive material is copper, tungsten, molybdenum, gold, silver, aluminium, copper tungsten, molybdenum copper, copper-molybdenum copper or gold
Hard rock carbon/carbon-copper composite material.
In one embodiment, the thickness of the conductive material is between 9-11um.
In one embodiment, the insulating materials be aluminium nitride, diamond, beryllium oxide or aluminium oxide, can also example
Such as: ceramic material, ceramic-metal composites, diamond or diamond metal composite, it specifically can be using oxidation
The composite materials such as aluminium, aluminium nitride, beryllium oxide, silicon carbide, diamond, diamond copper.
In one embodiment, the thermal conductivity of the insulating materials is between 110-130W/m.k.
In one embodiment, the insulating materials with a thickness of 30 nanometers~40 nanometers, significantly reduce thermal resistance, simultaneously
Guarantee insulating properties.
In one embodiment, the structure type of the conductive material is: being set at the top of insulating heat-conductive block and/or insulate
The coating or coating of heat-conducting block side.
In one embodiment, the structure type of the conductive material is: penetrating through from positive thermally conductive layer to the back side
Thermally conductive layer one or more column constructions.
In one embodiment, the substrate has at least one groove, and the groove includes the conducting element.
In one embodiment, wherein the groove is etched into the substrate.
In one embodiment, wherein the column construction is square column, cylinder perhaps in cylindroid or these three cylindricalitys
Any combination, such as can be the combination of square column hole, cylindrical hole, oval post holes or several cylindrical holes, oval post holes etc..
As shown in Figure 1, a kind of manufacturing method of semiconductor devices of the invention, comprising: step S101 provides one kind and partly leads
Body laser, the semiconductor laser are respectively provided with Vertical Launch device and at least one pumping radiation source, their monolithics are side by side
Ground is integrated on common substrate, and the substrate is the complex collectively formed by insulating materials and conductive material；Step S102,
Conductive sheet is provided, the conducting element is contacted with the semiconductor laser, and is arranged for being mounted on supporting mass
On mounting surface.
In one embodiment, the form that the complex is laminated by multi-layer insulation and multilayer conductive material with interval
It constitutes.
In one embodiment, the insulating materials in the complex and/or conductive material can pass through 3D printing, physics gas
Mutually deposition (PVD), chemical vapor deposition (CVD), physical chemistry vapor deposition (PCVD), electronics sputtering, coating, spraying, infiltration,
It is processed into conjunction with techniques such as Chemical Physics polishing (CMP), accurate cuttings.
In one embodiment, the Vertical Launch layer for the generation radiation that Vertical Launch device has at least one active, this hangs down
Straight emission layer in vertical main radiation direction with pumping radiation layer source every.The radiation mode in pumping radiation source is in Vertical Launch device
It is extended on Vertical Launch direction, so that pumping radiation mode is overlapping with Vertical Launch layer at work.Due to Vertical Launch
Layer and pumping radiation source separate vertically.In this way, the wave of pumping radiation can be adjusted in a wide range
The wavelength of long and Vertical Launch radiation, it is possible thereby to realize high pumping efficiency.
In one embodiment, Vertical Launch layer includes at least one quantum layer.In a particularly preferred form of implementation
In, quantum layer can have the combination of quantum slot, quantum wire, quantum dot or these structures herein.
In one embodiment, internal resonant cavity-reflector structure is provided with after Vertical Launch layer, the structure is special
It You Xuandiwei not Bragg reflector.
In one embodiment, pumping radiation source is implemented as edge emitting, electric pump semiconductor laser, master
Radiation direction is directed toward Vertical Launch layer.End face that pumping radiation source and Vertical Launch layer deviate from, parallel to each other is by structure reflectingly
It builds and is used as the Resonant reflector for pumping radiation.Can advantageous by cleavage or or by etching formed,
And the optionally layer with high reflectivity energy in deposit.
In one embodiment, the bottom of the complex is insulating materials.
In one embodiment, the form that the complex is laminated by multi-layer insulation and multilayer conductive material with interval
It constitutes.
In one embodiment, the conductive material is copper, tungsten, molybdenum, gold, silver, aluminium, copper tungsten, molybdenum copper, copper-molybdenum copper or gold
Hard rock carbon/carbon-copper composite material.
In one embodiment, the thickness of the conductive material is between 9-11um.
In one embodiment, the insulating materials be aluminium nitride, diamond, beryllium oxide or aluminium oxide, can also example
Such as: ceramic material, ceramic-metal composites, diamond or diamond metal composite, it specifically can be using oxidation
The composite materials such as aluminium, aluminium nitride, beryllium oxide, silicon carbide, diamond, diamond copper.
In one embodiment, the thermal conductivity of the insulating materials is between 110-130W/m.k.
In one embodiment, the insulating materials with a thickness of 30 nanometers~40 nanometers, significantly reduce thermal resistance, simultaneously
Guarantee insulating properties.
In one embodiment, the structure type of the conductive material is: being set at the top of insulating heat-conductive block and/or insulate
The coating or coating of heat-conducting block side.
In one embodiment, the structure type of the conductive material is: penetrating through from positive thermally conductive layer to the back side
Thermally conductive layer one or more column constructions.
In one embodiment, the substrate has at least one groove, and the groove includes the conducting element.
In one embodiment, wherein the groove is etched into the substrate.
In one embodiment, wherein the column construction is square column, cylinder perhaps in cylindroid or these three cylindricalitys
Any combination, such as can be the combination of square column hole, cylindrical hole, oval post holes or several cylindrical holes, oval post holes etc..
The invention has the benefit that
It realizes simple, comprising: at least one semiconductor laser, with Vertical Launch device and at least one pumping radiation
Source, they are monolithically integrated on common substrate side by side, and the substrate is collectively formed by insulating materials and conductive material
Complex and conducting element, the conducting element are contacted with the semiconductor laser, and have mounting surface, institute
Mounting surface is stated to be arranged on supporting mass.All substrates can be made to unified standard component, preparation process is greatly simplified, made
Journey only needs two steps, and material variety is few, and packaging fixture requirement is low, therefore Material Cost and cost of labor are saved significantly.It can enhancing production
The anti-fatigue ability and thermal stability of product, the final life and reliability for improving product, the final finished product for improving individual laser package
Rate.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (10)
1. a kind of semiconductor devices characterized by comprising
At least one semiconductor laser, with Vertical Launch device and at least one pumping radiation source, they are side by side monolithically
It being integrated on common substrate, the substrate is the complex collectively formed by insulating materials and conductive material, and
Conducting element, the conducting element are contacted with the semiconductor laser, and have mounting surface, the mounting surface
It is arranged on supporting mass.
2. semiconductor devices according to claim 1, which is characterized in that the bottom of the complex is insulating materials.
3. semiconductor devices according to claim 1, which is characterized in that the complex is by multi-layer insulation and multilayer
Conductive material is constituted in the form that interval is laminated.
4. semiconductor devices according to claim 1, which is characterized in that the conductive material be copper, tungsten, molybdenum, gold, silver,
Aluminium, copper tungsten, molybdenum copper, copper-molybdenum copper or diamond carbon/carbon-copper composite material；Insulating materials is aluminium nitride, diamond, beryllium oxide or oxygen
Change aluminium.
5. semiconductor devices according to claim 1, which is characterized in that the structure type of the conductive material is: setting
Coating or coating in insulating heat-conductive block top and/or insulating heat-conductive block side.
6. semiconductor devices according to claim 1, which is characterized in that the structure type of the conductive material is: from just
The thermally conductive layer in face is penetrated through to one or more column constructions of the thermally conductive layer at the back side.
7. semiconductor devices according to claim 1, which is characterized in that the substrate has at least one groove, described
Groove includes the conducting element.
8. semiconductor devices according to claim 7, wherein the groove is etched into the substrate.
9. semiconductor devices according to claim 6, wherein the column construction is square column, cylinder or cylindroid, or
Any combination in these three cylindricalitys of person.
10. a kind of manufacturing method of semiconductor devices characterized by comprising
A kind of semiconductor laser is provided, the semiconductor laser is respectively provided with Vertical Launch device and at least one pumping radiation
Source, their monolithics are abreast integrated on common substrate, and the substrate is collectively formed by insulating materials and conductive material
Complex；
Conductive sheet is provided, the conducting element is contacted with the semiconductor laser, and is arranged for being mounted on branch
Hold the mounting surface on body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811596479.4A CN109449748A (en) | 2018-12-26 | 2018-12-26 | A kind of semiconductor devices and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811596479.4A CN109449748A (en) | 2018-12-26 | 2018-12-26 | A kind of semiconductor devices and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109449748A true CN109449748A (en) | 2019-03-08 |
Family
ID=65535653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811596479.4A Pending CN109449748A (en) | 2018-12-26 | 2018-12-26 | A kind of semiconductor devices and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109449748A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023568A (en) * | 2004-09-22 | 2007-08-22 | 奥斯兰姆奥普托半导体有限责任公司 | A surface-emitting semi-conductor laser device and method for making same |
| CN105790062A (en) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | Semiconductor laser based on anisotropic substrate |
-
2018
- 2018-12-26 CN CN201811596479.4A patent/CN109449748A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023568A (en) * | 2004-09-22 | 2007-08-22 | 奥斯兰姆奥普托半导体有限责任公司 | A surface-emitting semi-conductor laser device and method for making same |
| CN105790062A (en) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | Semiconductor laser based on anisotropic substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8841151B2 (en) | Method of manufacturing a light emission device based on light emitting diodes | |
| JP6367980B2 (en) | Electronic device component with integrated diamond heat spreader | |
| CN104681704B (en) | Flip LED chips and preparation method thereof | |
| TW201541529A (en) | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom | |
| JP2013522915A (en) | Light emitting diode with enhanced thermal sinking and associated method of operation | |
| CN105470218B (en) | Integration of backside heat spreader for thermal management | |
| US10017870B2 (en) | Method for fabricating a heat sink, and heat sink | |
| US20230232536A1 (en) | Electronic mounting substrate and electronic device | |
| US10278285B2 (en) | Electric component assembly | |
| KR20080063382A (en) | Optoelectronic semiconductor chip and method for producing it | |
| US20090250248A1 (en) | Support substrate structure for supporting electronic component thereon and method for fabricating the same | |
| CN109449748A (en) | A kind of semiconductor devices and its manufacturing method | |
| US20140151009A1 (en) | Thermal interface element and method of preparation | |
| CN105790062B (en) | A kind of semiconductor laser based on Anisotropic substrate | |
| TW200922425A (en) | Structure and manufacturing method of circuit substrate board | |
| CN106299073B (en) | LED wafer and forming method thereof | |
| CN109574713A (en) | Method for surface metallation and its package substrate for aluminium nitride ceramics package substrate | |
| US11881548B2 (en) | Electronic device, semiconductor device, packaging structure, bracket and method of manufacturing the bracket | |
| CN110062955B (en) | Electronic component mounting substrate, electronic device, and electronic module | |
| US10060036B2 (en) | Plated-layer structure for improving interface stress between aluminium nitride substrate and copper-plated layer | |
| EP4131365A1 (en) | Electronic component mounting substrate and electronic device | |
| US20110232950A1 (en) | Substrate and method for manufacturing the same | |
| US20220336316A1 (en) | Electronic component mounting base and electronic device | |
| WO2017185775A1 (en) | Light-emitting diode and manufacturing method therefor | |
| JP7259091B2 (en) | Packages for mounting electronic components and electronic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190308 |
|
| RJ01 | Rejection of invention patent application after publication |