CN105790062B - A kind of semiconductor laser based on Anisotropic substrate - Google Patents

Abstract

The present invention proposes a kind of new semiconductor laser structure, is mainly improved chip substrate, solves the problems, such as that the cooling capsulation structure for semiconductor laser heat conduction efficiency of existing conduction is lower, packaging technology is more complex.A kind of semiconductor laser based on Anisotropic substrate, including chip of laser, substrate and radiator, chip of laser are bonded to the front or the back side of substrate, and substrate bottom directly passes through on solder bond to radiator, meet CTE match；The substrate is the complex collectively formed by insulating materials and conductive material, layout in complex of insulating materials and conductive material so that: correspond to the bond area of chip of laser in the complex, conductive communication shown as from substrate face to substrate back；The bond area and substrate bottom show as mutually insulated.

Description

A kind of semiconductor laser based on Anisotropic substrate

Technical field

The present invention relates to a kind of semiconductor laser, the improvement to chip substrate is related generally to.

Background technique

The common capsulation structure for semiconductor laser of one kind as shown in Figure 1, the path of chip of laser heat dissipation are as follows: half The heat that conductor laser chip 1 generates, is first transmitted to substrate 2, is transmitted on collets 4 again by solder layer 3, then pass through weldering The bed of material 5 is transmitted on radiator 6.Heat conduction path from chip of laser to radiator is long, and interface is more, reduces entire laser The heat-sinking capability of device.

Collets 4 are because of the needs of structure, technique, and thickness, which generally requires, reaches 300 microns or more, and which also limits it The efficiency of heat transfer.Meanwhile between collets and chip of laser substrate and radiator, need to be assembled by solder layer Bonding, increases the interface of heat transfer.

The components of the laser of this structure, composition are more, in assembling, bonding process, need relative complex pair Together, positioning process cooperates accurately fixture or micro-type automated equipment.Solder varieties, weld interface are more simultaneously, lead to crash rate It greatly increases.

The installation of the collets of this structure, one is collets to be welded together in advance with chip substrate, and one is exhausted Edge block is welded together with radiator, both schemes are required to more complicated technique, and crash rate is higher.

Summary of the invention

In order to solve, the cooling capsulation structure for semiconductor laser heat conduction efficiency of existing conduction is lower, packaging technology is more complex The problem of, the present invention proposes a kind of new semiconductor laser structure.

Technical scheme is as follows:

A kind of semiconductor laser based on Anisotropic substrate, including chip of laser, substrate and radiator, laser For chip bonding in the front or the back side of substrate, substrate bottom directly passes through on solder bond to radiator that (" direct " here be Refer to and traditional collets be not present between substrate bottom and solder layer), meet CTE match；The substrate is by insulating Layout in complex of the complex that material and conductive material collectively form, insulating materials and conductive material so that:

The bond area for corresponding to chip of laser in the complex, shows as conduction from substrate face to substrate back Connection；The bond area and substrate bottom show as mutually insulated.

On the basis of above scheme, specifically product can be broadly divided into two major classes:

The first kind: the bottom of complex is insulating materials.

Second class: the bottom of complex is conductive material.

For first kind products scheme, can further optimize as follows:

The insulation thickness of the bottom of complex is 50 nanometers~100 microns.

The main body of complex is insulating materials；Correspond to the bond area of chip of laser in the complex, at least One, which sentences conductive material, penetrates through from substrate face to substrate back.Perforation form is preferred with column construction, i.e. everywhere conduction material Material is that column construction is penetrated through from substrate face to substrate back；Or everywhere conductive material is formed complete one in complex Layer.

In view of other factors such as the molding processing technologys of complex, " column construction " here preferably square column type, cylinder The more regular form such as shape.In addition, certainly, it is this that " column is not limited in the structure that local location penetrates through with conductive material Shape structure " forms conductive path as long as can guarantee to be penetrated through from substrate face to substrate back, is also all that can reach certain effect Fruit.

For the conductive material layout of cylindricality communicating structure, preferable structure type is: the conduction material of many places column construction Material is arranged in array on the whole.

For the second class products scheme, it is desirable that complex, which is located at the part below the bond area, to be existed completely by insulating The interlayer of material composition.

In addition there are also a kind of structure types without considering substrate bottom conductive characteristic, i.e., complex is by multi-layer insulation It is constituted with multilayer conductive material in the form that interval is laminated.

Above-mentioned conductive material can be copper, tungsten, molybdenum, copper tungsten, molybdenum copper or diamond copper；Insulating materials can be nitridation Aluminium, diamond, beryllium oxide or aluminium oxide.

A method of preparing above-mentioned semiconductor laser, comprising the following steps:

Multiple chip of laser and corresponding multiple substrates are successively aligned, arrange, assemble, and form a bar of item group；

One or more bar item groups are by solder bond to radiator, being made conduction cooling type high power half Conductor laser.

Substrate itself in the present invention had both been able to achieve electrically connecting on the stacking direction of multiple chip of laser, was also able to achieve Being electrically insulated between radiator, while realizing the rapid conduction of heat.Specifically there is following technical effect:

1, the use of the integrated chip substrate of conduction/insulation eliminates insulating trip in traditional structure and corresponding Solder layer improves product appearance, improves properties of product the problems such as spilling there is no solder.

2, thickness significantly reduces between integrated substrate and radiator of the invention, and only conventional insulator block tens arrives several hundred / mono-, thermal resistance is greatly reduced, the path of heat transfer is shortened, improves whole radiating efficiency.

3, the conduction cooling type laser based on the integration substrate, components type, quantity reduce, simplify and work is made Skill step greatly reduces alignment, assembling, manufactured technology difficulty, reduces the precision of substrate cutting technique, improve product Yield rate.

4, the binding force of insulating materials and conductive material is good in liner compound body of the present invention, relative to bonded interface, product Reliability promoted.

Detailed description of the invention

Fig. 1 is existing capsulation structure for semiconductor laser.

Fig. 2 is capsulation structure for semiconductor laser of the invention.

Fig. 3 is the conductive & insulation characterisitic of substrate (complex) of the invention.

Fig. 4 is the embodiment one of substrate of the invention (main body is insulating materials)

Fig. 5 is the embodiment two of substrate of the invention (main body is conductive material).

Fig. 6 is the embodiment three (stacking of multilayer material interval) of substrate of the invention.

Fig. 7 be substrate of the invention example IV (main body is insulating materials, and conductive material is equal in the form of cylindrical array Even distribution).

Fig. 8 is the encapsulation step of the cooling semiconductor laser of conduction of the invention.

Specific embodiment

As shown in Fig. 2, chip of laser 1 is assembled in the substrate 20 of a kind of high heat conductance, CTE match, one or more swashs With corresponding substrate by solder 5, assembling is bonded on radiator 6 light device chip, forms a semiconductor laser.The substrate Have electric conductivity (conductive region at least covers chip bonding area) in chip stacking direction, in the direction perpendicular to spreader surface On have insulating properties.

Such as Fig. 3, substrate 20 is the complex collectively formed by insulating materials and conductive material, insulating materials and conductive material It is tightly combined, such integration substrate realizes conductive and insulation simultaneously, adds collets to be bonded compared to existing conductive substrates Combination reduces interface and a solder layer (5~10 microns of thickness) that two are bonded.Insulating materials and conductive material are in complex In layout so that: be conductive on the H of direction；It is insulation on its vertical direction, that is, direction V；Certainly, insulating materials High thermal conductivity material should be all selected with conductive material, the thermally conductive entirety of material is isotropic.

The optional copper of conductive material, tungsten, molybdenum, copper tungsten, molybdenum copper, diamond copper etc..

The optional aluminium nitride of insulating materials, diamond, beryllium oxide, aluminium oxide etc..

Insulating materials and/or conductive material in the complex can pass through 3D printing, physical vapour deposition (PVD) (PVD), change Learn vapor deposition (CVD), physical chemistry vapor deposition (PCVD), electronics sputtering, coating, spraying, infiltration, in conjunction with Chemical Physics throwing The techniques such as light (CMP), accurate cutting are processed into.

There are two types of fundamental types for the complex:

1, based on insulating materials, conductive material 21 is added in the inside of the insulating materials 22 and/or surface.Such as Fig. 4 It is shown.

The position that complex surfaces are bonded with chip of laser is limited to current technique requirement, usually requires to do at metallization Reason forms metalized surface 23, in order to being bonded for chip of laser 1 and substrate.

2, based on conductive material 21, insulating materials 22 is added in the inside of the conductive material and/or surface.Such as Fig. 5 It is shown.

Even with a bit weaker insulating materials of thermal conductivity, the thickness of the insulating film in this species complex can be made into 50 and receive Rice~100 microns, compared to the collets of 300 microns or more traditional thickness, still significantly reduces thermal resistance, while guaranteeing to insulate Property.

The complex can also be made of multi-layer insulation and multilayer conductive material in the form that interval is laminated.Such as Fig. 6 institute Show.In complex 30, insulating layer 32 uses aluminium nitride, is conductive layer 31 between aluminium nitride, conductive material is by copper, nickel, golden group At.After nitride multilayer aluminium surface plating metal, it is combined as a whole under certain pressure, temperature conditions mutually.Complex 30 is by the face A (substrate face) to the face B (substrate back) is conductive, is insulation by the face A or the face B to the face C (substrate bottom).

The matrix of another kind complex structure as shown in Figure 7, complex 40 is insulating materials 42, and material is beryllium oxide, Addition 41 aluminium of conductive material, copper are combined as a whole under the conditions of certain temperature in the local hole of beryllium oxide matrix, are formed uniform The conductive path (cylindrical array) of distribution.

As shown in figure 8, packaging technology of the invention mainly comprises the steps that

One or more semiconductor laser chips (such as mini bar, half bar of item, standard cm bar item) are successively right Together, it arranges, assembling is bonded on (bottom section insulation) substrate, and a bar item group is made；Wherein, a chip can correspond to one Substrate can also additionally increase individual substrate between adjacent chip；Bar item group is assembled or is bonded on radiator, is made At conduction cooling type high-power semiconductor laser.

Claims (4)

1. a kind of semiconductor laser based on Anisotropic substrate, including chip of laser, substrate and radiator, laser core Piece is bonded to the front or the back side of substrate, it is characterised in that: substrate bottom directly passes through on solder bond to radiator, meets CTE match；The substrate is the complex collectively formed by insulating materials and conductive material, insulating materials and conductive material multiple Layout in zoarium so that: correspond to the bond area of chip of laser in the complex, from substrate face to substrate back Show as conductive communication；The bond area and substrate bottom show as mutually insulated；The specific structure of the complex are as follows:

The main body of the complex and bottom are insulating materials；Correspond to the bonding region of chip of laser in the complex Domain, at least one, which sentences conductive material, penetrates through from substrate face to substrate back；Everywhere conductive material forms complete in complex Whole one layer；

Alternatively, the main body of the complex and bottom are conductive material, the complex is located at below the bond area There is the interlayer being made of completely insulating materials in part；

Alternatively, the complex is made of multi-layer insulation and multilayer conductive material in the form that interval is laminated.

2. the semiconductor laser according to claim 1 based on Anisotropic substrate, it is characterised in that: the conduction material Material is copper, tungsten, molybdenum, copper tungsten, molybdenum copper or diamond copper；Insulating materials is aluminium nitride, diamond, beryllium oxide or aluminium oxide.

3. the semiconductor laser according to claim 1 based on Anisotropic substrate, it is characterised in that: for main body with And bottom is the complex of insulating materials, the insulation thickness of bottom is 50 nanometers~100 microns.

4. a kind of method for preparing semiconductor laser described in claim 1, comprising the following steps:

Multiple chip of laser and corresponding multiple substrates are successively aligned, arrange, assemble, and form a bar of item group；

One or more bar item groups are by being made a conduction cooling type high power semiconductor on solder bond to radiator Laser.