CN109449266A - A kind of multi-wave length illuminating diode wafer and preparation method thereof - Google Patents
A kind of multi-wave length illuminating diode wafer and preparation method thereof Download PDFInfo
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- CN109449266A CN109449266A CN201811392915.6A CN201811392915A CN109449266A CN 109449266 A CN109449266 A CN 109449266A CN 201811392915 A CN201811392915 A CN 201811392915A CN 109449266 A CN109449266 A CN 109449266A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 239000007771 core particle Substances 0.000 claims abstract description 23
- 238000009826 distribution Methods 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 27
- 238000012546 transfer Methods 0.000 abstract description 25
- 238000005530 etching Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
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- 210000004209 hair Anatomy 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of multi-wave length illuminating diode wafers and preparation method thereof, are made of substrate, the first semiconductor layer and the second semiconductor layer；Wherein: the first semiconductor layer is formed on the substrate, and the surface of first semiconductor layer is prepared with two or more different crystal faces, and the difference crystal face has different inclination angle relative to the angle of substrate plane.The present invention has the advantages that by the way that etching prepares the first crystal face and the second crystal face in advance on the first semiconductor layer, the inclination angle of the first crystal face and the second crystal face is utilized respectively to deploy the thickness of active layer, so as to selectively according to the core particles size of subsequent Micro LED display, core particles spacing and the corresponding light emitting diode that required a variety of emission wavelengths are prepared on same wafer of Wavelength distribution, it is cut into the Micro LED core particle with different peak wavelengths, the Micro LED flood tide transfer carried out based on this, higher transfer efficiency may be implemented.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of multi-wave length illuminating diode wafer and its systems
Preparation Method.
Background technique
By nearly fast development in 20 years, light emitting diode gradually substitutes fluorescent lamp in traditional white-light illuminating field
It as preferred lighting source, while being also the preferred solution of outdoor large scale display screen.Light emitting diode is carried out micro-
Contractingization is to form the micro- light emitting diode of Micro LED(), so as to substitute existing LCD technology, it is applied to indoor big
The application fields such as screen TV, mobile phone display screen, wearable device display screen are an important hairs of current light emitting diode industry
Exhibition trend.Compared with traditional liquid crystal display, Micro LED has high-luminous-efficiency, low-power consumption, wide colour gamut, high reliability
Equal many advantages, if can overcome presently, there are technical problem and cost barrier, the leather of next display technology will be brought
Life.Each large enterprises also exist in the layout for carrying out Micro LED technology, including apple, three magnitude Zoomlions both at home and abroad at present
Actively carry out the research and development of Micro LED technology.
The display screen that Micro LED requires different sizes and resolution at present, uses different transfer schemes.Wherein
The mode cohered using chip is shifted for the Micro LED of small size, higher resolution display screen, i.e., by Micro LED's
Core particles are just corresponding with the connection electrode in target base plate in chip preparatory phase, so as to cohere wafer using chip
Mode be connected in target base plate.But in current mainstream technology, single wafer piece can only realize single emission wavelength, make single
The mode that the chip of wafer coheres is difficult to realize true color and shows, to the wafer of three kinds of wavelength of red, green, blue exists respectively
The Micro LED transfer that chip coheres is carried out in target base plate, and can greatly increase the consumed cost of wafer.If therefore can be
The Micro LED core particle that a variety of emission wavelengths are realized on same wafer there will be an opportunity to realize that the chip of a wafer coheres
Complete the Micro LED transfer that true color is shown.
Large scale, the Micro LED transfer compared with low-res display screen are turned using the flood tide of Pick and Place
The core particles of Micro LED are extracted by transfer printing head, and put down in corresponding target base plate by shifting mode, repeated with this more
The secondary transfer to realize the Micro LED core particle of flood tide.Since the pixel number of display screen is very huge, especially for
Reach and be more clear fine and smooth display effect, the resolution of tv display screen has been popularized as 4K at present, with 75 cun of 4K high
For clear TV, corresponding Micro LED core particle quantity is about 25,000,000, so that the flood tide transfer needed for completing needs to consume
Take a large amount of time, while in order to meet the display demand of true color, needing the Micro LED core particle of three kinds of colors of RGB
It is shifted respectively, the Pick and Place flood tide transfer proposed with the famous X-celeprint company of Micro LED field
For technical solution, 75 cun of 4K high definition television at least need to complete for 31 days flood tide transfer work therein,
Transfer efficiency is difficult to meet industrial volume production.If the Micro of a variety of emission wavelengths therefore can be prepared on same wafer
LED core particle just can disposably extract the core particles of required multi-wavelength, thus when saving transfer when transfer printing head extracts core particles
Between.
No matter transfer is binded for chip or Pick and Place is shifted, transfer efficiency is all extremely important technology
Index, and the LED core grains of a variety of emission wavelengths are prepared on same wafer, its transfer can be significantly improved
Efficiency, so as to effectively promote the volume production process of Micro LED display technique.
Summary of the invention
The present invention provides a kind of multi-wave length illuminating diode wafers and preparation method thereof, on the first semiconductor layer in advance
First etching prepares two or more different crystal faces, and the difference of these different crystal faces is it relative to substrate plane
Inclination angle is different, so as to utilize the anisotropic crystal growth rate difference on different inclination angle crystal face, after deploying
The active layer thickness of continuous growth, and then realize the light emitting diode that multi-wavelength is prepared on same wafer, it can be effective
Improve the transfer efficiency of subsequent Micro LED flood tide transfer.
To achieve the above object, the invention provides the following technical scheme: a kind of multi-wave length illuminating diode wafer, by serving as a contrast
Bottom, the first semiconductor layer and the second semiconductor layer are formed；Wherein: the first semiconductor layer is formed on the substrate, and described
The surface of semi-conductor layer is prepared with two or more different crystal faces, folder of the difference crystal face relative to substrate plane
Angle has different inclination angle, and second semiconductor layer is formed on the first semiconductor layer surface, second semiconductor layer
Comprising active layer and p-type gallium nitride layer, the active layer has on the relative position of the first semiconductor layer surface difference crystal face
The active layer of different thickness, the different-thickness can issue the light with different peak wavelengths.
A kind of multi-wave length illuminating diode wafer, in which: the different crystal faces in the first semiconductor layer surface are relative to lining
The inclination angle of baseplane, between 0-45oBetween.
A kind of multi-wave length illuminating diode wafer, in which: the active layer of the different-thickness issues different peak wavelengths
Light, peak wavelength distribution range is between 380-780nm.
A kind of multi-wave length illuminating diode wafer, in which: the different crystal faces in first semiconductor layer surface are opposite
Include strip, circle, triangle, square, hexagon in the cross sectional shape of substrate plane and any there is closing opening
Polygon.
A kind of multi-wave length illuminating diode wafer, in which: the substrate includes Sapphire Substrate, silicon substrate, silicon carbide
Substrate, aluminium nitride substrate, gallium nitride substrate, gallium arsenide substrate.
The invention proposes a kind of preparation methods of multi-wave length illuminating diode wafer, include the following steps::
Step S1: providing a substrate, substrate be placed in Metal Organic Vapor chemical deposition board (MOCVD), controls
The reaction cavity pressure of MOCVD is 100-600torr, temperature 500-1200oC, and it is passed through nitrogen, hydrogen, ammonia, silane and three
Methyl gallium gas, the gallium nitride for depositing 1-10um thickness on substrate is the first semiconductor layer；
Step S2: sample is taken out from MOCVD, and undergo gluing, exposure, development, etch, step of removing photoresist is in the first semiconductor
Striated bulge-structure is etched in layer surface to form the first crystal face and the second crystal face, the figure of bulge-structure in the process
Shape size need to be corresponding with the core particles size of subsequent Micro LED display, core particles spacing and Wavelength distribution, first crystal face
Angle relative to substrate plane is the first inclined angle alpha1, second crystal face is the second inclination relative to the angle of substrate plane
Angle α2；
Step S3: sample is placed again into MOCVD reaction chamber, and control reaction cavity pressure is 200-500torr, temperature 750-
1000oC, and be passed through nitrogen, hydrogen, ammonia, trimethyl indium, triethyl-gallium, two luxuriant magnesium and trimethyl gallium gas is led the first half
The second semiconductor layer is formed on body layer, wherein the second semiconductor layer includes active layer and p-type gallium nitride layer.
Compared with prior art, the present invention provides a kind of multi-wave length illuminating diode wafer and preparation method thereof, tools
It is standby following the utility model has the advantages that by etching the first crystal face of preparation and the second crystal face in advance on the first semiconductor layer, be utilized respectively the
The thickness of active layer is deployed at the inclination angle of one crystal face and the second crystal face, so as to selectively according to subsequent Micro
The core particles size of LED display, core particles spacing and Wavelength distribution is corresponding that required a variety of hairs are prepared on same wafer
The light emitting diode of optical wavelength, and subsequent chip processing procedure of arranging in pairs or groups, are cut into the Micro LED core with different peak wavelengths
Grain.The Micro LED flood tide transfer carried out based on this, may be implemented higher transfer efficiency, with the aobvious of redgreenblue
For display screen, transfer efficiency is can be improved in the flood tide transfer for disposably carrying out two kinds of emission wavelengths or even three kinds of emission wavelengths.
Detailed description of the invention
Fig. 1 is a kind of structure sectional view of multi-wave length illuminating diode wafer of first preferred embodiment of the invention.
Fig. 2 is the structural schematic diagram of the first semiconductor layer of first preferred embodiment of the invention.
Appended drawing reference: substrate 101, the first semiconductor layer 102, the first crystal face 1021, the second crystal face 1022, the second semiconductor
Layer 103, active layer 1031, p-type gallium nitride layer 1032.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1 shows a kind of multi-wave length illuminating diode wafer of first preferred embodiment of the invention, by substrate
101, the first semiconductor layer 102 and the second semiconductor layer 103 are formed；Wherein: the first semiconductor layer 102 is formed in the substrate
On 101, the surface of first semiconductor layer 102 is prepared with two or more different crystal faces, the difference crystal face phase
For substrate plane angle have different inclination angle, second semiconductor layer 103 be formed in the first semiconductor layer surface it
On, second semiconductor layer 103 includes active layer 1031 and p-type gallium nitride layer 1032, and the active layer 1031 is the first half
There is different thickness, the active layer 104 of the different-thickness can issue on the relative position of 102 surface difference crystal face of conductor layer
Light with different peak wavelengths.
Specifically, as shown in Fig. 2, different crystal faces inclining relative to 101 plane of substrate on 102 surface of the first semiconductor layer
Oblique angle, between 0-45oBetween, the active layer 1031 of the different-thickness issues the light of different peak wavelengths, peak wavelength point
For cloth range between 380-780nm, the substrate 101 includes Sapphire Substrate, silicon substrate, silicon carbide substrates, aluminium nitride lining
Bottom, gallium nitride substrate, gallium arsenide substrate.
Wherein: cross sectional shape packet of the different crystal faces relative to 101 plane of substrate on 102 surface of the first semiconductor layer
Include strip, circle, triangle, square, hexagon and any polygon with closing opening.
Below by taking Sapphire Substrate as an example, the production method of light emitting diode shown in FIG. 1 is briefly described.
Firstly, providing a Sapphire Substrate 101, Sapphire Substrate 101 is placed in Metal Organic Vapor chemistry and is sunk
In product board (MOCVD), the reaction cavity pressure for controlling MOCVD is 100-600torr, temperature 500-1200oC, and it is passed through nitrogen
Gas, hydrogen, ammonia, silane and trimethyl gallium gas, the gallium nitride that 5um thickness is deposited in Sapphire Substrate 101 is the first half
Conductor layer 102, wherein the first semiconductor layer 102 includes n-type gallium nitride layer；
Then, sample is taken out from MOCVD, and undergo gluing, exposure, development, etch, step of removing photoresist is in the first semiconductor layer
Striated bulge-structure is etched on 102 surfaces to form the first crystal face 1021 and the second crystal face 1022, in the process convex
The dimension of picture for playing structure need to be corresponding with the core particles size of subsequent Micro LED display, core particles spacing and Wavelength distribution, this
In embodiment, first inclined angle alpha of first crystal face 1021 relative to 101 plane of Sapphire Substrate1It is 0.2o, described second
Second inclined angle alpha of the crystal face 1022 relative to 101 plane of Sapphire Substrate2It is 15o；
Finally, sample is placed again into MOCVD reaction chamber, control reaction cavity pressure is 200-500torr, temperature 750-
1000oC, and be passed through nitrogen, hydrogen, ammonia, trimethyl indium, triethyl-gallium, two luxuriant magnesium and trimethyl gallium gas is led the first half
The second semiconductor layer 103 is formed on body layer 102, wherein the second semiconductor layer 103 includes active layer 1031 and p-type gallium nitride layer
1032。
Due to the inclination angular difference of the first crystal face 1021 and the second crystal face 1022, thus active on the first crystal face 1021
The peak wavelength of layer 1031 is 510nm, and the peak wavelength of the active layer 1031 on the second crystal face 1022 is 450nm.
In the multi-wave length illuminating diode wafer of the present embodiment, pass through etching preparation in advance the on the first semiconductor layer
One crystal face and the second crystal face, are utilized respectively the inclination angle of the first crystal face and the second crystal face to deploy the thickness of active layer, so as to
It is corresponding same with the core particles size, core particles spacing and Wavelength distribution selectively according to subsequent Micro LED display
The light emitting diode of required a variety of emission wavelengths is prepared on wafer, and subsequent chip processing procedure of arranging in pairs or groups, be cut into tool
There is the Micro LED core particle of different peak wavelengths.The Micro LED flood tide transfer carried out based on this, may be implemented higher
Transfer efficiency disposably carry out two kinds of emission wavelengths or even three kinds of emission wavelengths for the display screen of redgreenblue
Transfer efficiency can be improved in flood tide transfer.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of multi-wave length illuminating diode wafer, by substrate (101), the first semiconductor layer (102) and the second semiconductor layer
(103) it is formed；It is characterized by: the first semiconductor layer (102) is formed on the substrate (101), first semiconductor
The surface of layer (102) is prepared with two or more different crystal faces, angle of the difference crystal face relative to substrate plane
With different inclination angle, second semiconductor layer (103) is formed on the first semiconductor layer surface, second semiconductor
Layer (103) includes active layer (1031) and p-type gallium nitride layer (1032), and the active layer (1031) is in the first semiconductor layer
(102) there is different thickness, the active layer (1031) of the different-thickness can issue on the relative position of surface difference crystal face
Light with different peak wavelengths.
2. a kind of multi-wave length illuminating diode wafer according to claim 1, it is characterised in that: the first semiconductor layer
(102) the different crystal faces on surface are relative to the inclination angle of substrate (101) plane between 0-45oBetween.
3. a kind of multi-wave length illuminating diode wafer according to claim 1, it is characterised in that: the different-thickness
Active layer (1031) issues the light of different peak wavelengths, and peak wavelength distribution range is between 380-780nm.
4. a kind of multi-wave length illuminating diode wafer according to claim 1, it is characterised in that: first semiconductor
Different crystal faces on layer (102) surface include strip, circle, triangle, just relative to the cross sectional shape of substrate (101) plane
Rectangular, hexagon and any polygon with closing opening.
5. a kind of multi-wave length illuminating diode wafer according to claim 1, it is characterised in that: the substrate (101)
Including Sapphire Substrate, silicon substrate, silicon carbide substrates, aluminium nitride substrate, gallium nitride substrate, gallium arsenide substrate.
6. a kind of preparation method of multi-wave length illuminating diode wafer, it is characterized in that including the following steps:
Step S1: it provides a substrate (101), substrate (101) is placed in Metal Organic Vapor chemical deposition board
(MOCVD) in, the reaction cavity pressure for controlling MOCVD is 100-600torr, temperature 500-1200oC, and it is passed through nitrogen, hydrogen
Gas, ammonia, silane and trimethyl gallium gas, the gallium nitride that 1-10um thickness is deposited on substrate (101) is the first semiconductor layer
(102)；
Step S2: sample is taken out from MOCVD, and undergo gluing, exposure, development, etch, step of removing photoresist is in the first semiconductor
Layer etches striated bulge-structure on (102) surface to form the first crystal face (1021) and the second crystal face (1022), herein mistake
The dimension of picture of bulge-structure in journey need to be with the core particles size, core particles spacing and Wavelength distribution of subsequent Micro LED display
Corresponding, first crystal face (1021) is the first inclined angle alpha relative to the angle of substrate (101) plane1, second crystal face
(1022) angle relative to substrate (101) plane is the second inclined angle alpha2；
Step S3: sample is placed again into MOCVD reaction chamber, and control reaction cavity pressure is 200-500torr, temperature 750-
1000oC, and be passed through nitrogen, hydrogen, ammonia, trimethyl indium, triethyl-gallium, two luxuriant magnesium and trimethyl gallium gas is led the first half
The second semiconductor layer (103) are formed on body layer (102), wherein the second semiconductor layer (103) includes active layer (1031) and p-type nitrogen
Change gallium layer (1032).
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| CN201811392915.6A CN109449266A (en) | 2018-11-21 | 2018-11-21 | A kind of multi-wave length illuminating diode wafer and preparation method thereof |
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| CN201811392915.6A CN109449266A (en) | 2018-11-21 | 2018-11-21 | A kind of multi-wave length illuminating diode wafer and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
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| CN108695417A (en) * | 2018-05-08 | 2018-10-23 | 太原理工大学 | Unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof based on V-arrangement hole |
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2018
- 2018-11-21 CN CN201811392915.6A patent/CN109449266A/en active Pending
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|---|---|---|---|---|
| US20050082544A1 (en) * | 2003-10-20 | 2005-04-21 | Yukio Narukawa | Nitride semiconductor device, and its fabrication process |
| JP2017092183A (en) * | 2015-11-06 | 2017-05-25 | 国立大学法人京都大学 | Semiconductor light emitting element and method of manufacturing the same |
| CN105552188A (en) * | 2015-12-16 | 2016-05-04 | 清华大学 | Semiconductor structure and manufacturing method thereof |
| CN108695417A (en) * | 2018-05-08 | 2018-10-23 | 太原理工大学 | Unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof based on V-arrangement hole |
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