CN109449221A - A kind of graphene crystal silicon solar battery and its manufacturing method - Google Patents
A kind of graphene crystal silicon solar battery and its manufacturing method Download PDFInfo
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- CN109449221A CN109449221A CN201811629271.8A CN201811629271A CN109449221A CN 109449221 A CN109449221 A CN 109449221A CN 201811629271 A CN201811629271 A CN 201811629271A CN 109449221 A CN109449221 A CN 109449221A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 82
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000003292 glue Substances 0.000 claims description 62
- 238000007711 solidification Methods 0.000 claims description 9
- 230000008023 solidification Effects 0.000 claims description 9
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- -1 graphite alkene Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of graphene crystal silicon solar battery, including silicon wafer and is set to the positive grid line of the silicon chip surface, the anode grid line includes a plurality of main grid being parallel to each other and the secondary grid perpendicular to the main grid；It further include graphene transparency conducting layer, the graphene transparency conducting layer is at least covered on the surface of the secondary grid.The present invention is compared to the prior art, graphene transparency conducting layer is superimposed on crystal silicon solar battery, graphene has transmitance height, the advantages of good conductivity, graphene and main grid, secondary grid form good electrical contact, advantage to make full use of graphene transverse conduction good, part carrier are transferred to main grid by graphene, reduce the carrier transport loss of secondary grid；The arrangement quantity that secondary grid can be reduced compared to traditional solar cell simultaneously, increases light-receiving area, improves battery short circuit electric current and photoelectric conversion efficiency.
Description
Technical field
The present invention relates to solar-photovoltaic technology field, specifically a kind of graphene crystal silicon solar battery and its manufacturer
Method.
Background technique
In crystal silicon solar battery, front electrode is responsible for collecting carrier from crystalline silicon, and is transferred to external circuit.Front
Electrode structure is divided into main grid and secondary grid, and the two carries different functions.Wherein, secondary grid are responsible for collecting current-carrying from crystalline silicon
Son is then transferred to main grid, then main grid by carrier transport to welding, into external circuit.For to shading-area and cost
On control, secondary grid are generally all thinner, and thinner secondary gate resistance is larger, and carrier is transferred to meeting during main grid through secondary grid
Emergent power loss.Currently, the method for reducing secondary grid transmission carrier loss is increase main grid quantity, and with main grid quantity
Increase, secondary gate length shortens, and transmission path of the carrier on secondary grid shortens, and secondary gate resistance reduces, and power loss reduces.But
It is to increase main grid quantity to will increase shading-area, in order not to increase shading-area, it is necessary to reduce main grid width, and width
The difficulty that welding is welded on main grid can be increased by reducing, and influence product yield and reliability.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the object of the present invention is to provide a kind of graphene crystal silicon solar batteries
And its manufacturing method.
In order to achieve the above objectives, the technical solution adopted by the present invention to solve the technical problems is: a kind of graphene crystal silicon
Solar cell including silicon wafer and is set to the positive grid line of the silicon chip surface, and the anode grid line includes a plurality of is parallel to each other
Main grid and secondary grid perpendicular to the main grid；It further include graphene transparency conducting layer, the graphene transparency conducting layer is at least
It is covered on the surface of the secondary grid.
The present invention compared to the prior art, is superimposed graphene transparency conducting layer on crystal silicon solar battery, and graphene has
The advantages of transmitance is high, good conductivity, graphene and main grid, secondary grid form good electrical contact, to make full use of graphite
The good advantage of alkene transverse conduction, part carrier are transferred to main grid by graphene, reduce the carrier transport loss of secondary grid；
The arrangement quantity that secondary grid can be reduced compared to traditional solar cell simultaneously, increases light-receiving area, improves battery short circuit electric current and light
Photoelectric transformation efficiency.
It further, further include PET light-transmissive film, the graphene transparency conducting layer is attached on the PET light-transmissive film, institute
PET light-transmissive film is stated mutually to be sticked with the one side of graphene transparency conducting layer with silicon chip surface.
Using the above preferred scheme, the preparation of graphene transparency conducting layer is promoted just as carrier by PET light-transmissive film
Benefit improves production efficiency.
Further, the graphene transparency conducting layer includes the graphene conductive unit at multiple intervals, each graphene
The main grid part that conductive unit can cover at least one secondary grid and be connected with the pair grid.
Using the above preferred scheme, graphene transparency conducting layer is sticked by blocking, and reduction is attached on silicon wafer difficult
Degree, it is ensured that graphene transparency conducting layer is sufficiently contacted with secondary grid.
Further, the PET light-transmissive film correspond to each graphene conductive unit be surrounded by indent lead glue groove,
Described to lead the excessive glue hole for being equipped in glue groove and extending through contralateral surface, described lead consolidates conducting resinl in glue groove.
Using the above preferred scheme, surrounding arrangement leads glue groove and can reduce conducting resinl dosage, by conducting resinl by stone
Black alkene conductive unit stabilization is attached on silicon wafer.
Further, multiple strike-through knots are equipped in the interval region of adjoining graphite alkene conductive unit on the PET light-transmissive film
Structure unit, the strike-through structural unit are used to fill UV solidification glue between PET light-transmissive film and silicon wafer.
Further, the strike-through structural unit includes main strike-through hole on PET light-transmissive film, is evenly arranged on the main strike-through hole
Around multiple dumping holes and the connection main strike-through hole and dumping hole between receive glue groove, the main strike-through hole and dumping hole
Through the PET light-transmissive film, the surface that the PET light-transmissive film and silicon wafer fit is arranged in the glue groove of receiving.
Using the above preferred scheme, PET light-transmissive film stabilization is further adsorbed on by silicon chip surface by UV solidification glue, prevented
Only shift fold.
A kind of manufacturing method of graphene crystal silicon solar battery, comprising the following steps:
(1) a PET light-transmissive film is taken, the region that muti-piece is used to deposit graphene conductive unit is marked on PET light-transmissive film,
Glue groove is led in each region surrounding etching indent, is punched excessive glue hole in glue groove leading；The spacer region of glue groove is led on PET light-transmissive film
Etching star be distributed with it is a plurality of receive glue groove, respectively receive glue groove convergence at the main strike-through hole of punching, distinguish receiving the diverging end of glue groove
It is punched dumping hole；
(2) one first auxiliary film is taken, it is logical that the frame shape to match with graphene conductive cell position is punched on the first auxiliary film
Slot, and the first auxiliary film is sticked to the one side that the PET light-transmissive film needs to adhere to graphene conductive unit；
(3) graphene solution is added in the groove body that the frame-type through slot of the first auxiliary film and PET light-transmissive film are formed, and vacuum is dry
Dry formation graphene conductive unit；
(4) one second auxiliary film is taken, the hollow-out parts in excessive glue hole on evacuation PET light-transmissive film are punched on the second auxiliary film, by the
Two auxiliary films are sticked on PET light-transmissive film and carry on the back in the surface of silicon wafer；
(5) the first auxiliary film is removed, applying conductive glue in glue groove is being led, PET light-transmissive film is sticked to silicon chip surface and is compressing,
Be heating and curing conducting resinl；
(6) the second auxiliary film is removed, UV solidification glue is poured out of main strike-through hole, compresses PET light-transmissive film, last ultra-violet curing.
Using the above preferred scheme, the preparation efficiency and stabilization for improving graphene transparency conducting layer are sticked to silicon wafer table
Face reduces production cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of one embodiment of the present invention；
Fig. 2 is the structural schematic diagram of one embodiment of the present invention；
Fig. 3 is the structural schematic diagram of one embodiment of the present invention；
Fig. 4 is the structural schematic diagram of one embodiment of the present invention；
Fig. 5 is the structural schematic diagram of one embodiment of the present invention；
Fig. 6 is the structural schematic diagram of one embodiment of the present invention；
Fig. 7 is the structural schematic diagram of one embodiment of the present invention；
Fig. 8 is the structural schematic diagram of one embodiment of the present invention；
Fig. 9 is the structural schematic diagram of one embodiment of the present invention.
The title of number and corresponding component represented by letter in figure:
1- silicon wafer；11- main grid；12- pair grid；2- graphene transparency conducting layer；21- graphene conductive unit；3-PET light transmission
Film；31- leads glue groove；311- excessive glue hole；312- conducting resinl；32- strike-through structural unit；The main strike-through hole 321-；322- dumping hole；
323- receives glue groove；324-UV solidification glue；The auxiliary film of 4- first；41- frame shape through slot；The auxiliary film of 5- second；51- hollow-out parts.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figs. 1-2, a kind of graphene crystal silicon solar battery including silicon wafer 1 and is set to the positive electrode gate on 1 surface of silicon wafer
Line, the anode grid line includes a plurality of main grid 11 being parallel to each other and the secondary grid 12 perpendicular to main grid；It further include that graphene is transparent
Conductive layer 2, graphene transparency conducting layer 2 are at least covered on the surface of secondary grid 12.
Beneficial effect by adopting the above technical scheme is: graphene transparency conducting layer, stone are superimposed on crystal silicon solar battery
Black alkene has the advantages of transmitance height, good conductivity, and graphene and main grid, secondary grid form good electrical contact, thus sufficiently
Using the good advantage of graphene transverse conduction, part carrier is transferred to main grid by graphene, reduces the carrier of secondary grid
Transmission loss；The arrangement quantity that secondary grid can be reduced compared to traditional solar cell simultaneously, increases light-receiving area, improves battery short circuit
Electric current and photoelectric conversion efficiency.
It as shown in Figure 2,3, further include PET light-transmissive film 3 in other embodiments of the invention, graphene is transparent to lead
Electric layer 2 is attached on PET light-transmissive film 3, and there is PET light-transmissive film 3 one side of graphene transparency conducting layer to be affixed with 1 surface of silicon wafer
If.Beneficial effect by adopting the above technical scheme is: by PET light-transmissive film as carrier, promoting graphene transparency conducting layer system
Standby convenience improves production efficiency.
As shown in Figure 2,3, in other embodiments of the invention, graphene transparency conducting layer 2 includes multiple intervals
Graphene conductive unit 21, the main grid that each graphene conductive unit 21 can cover at least one secondary grid and be connected with the pair grid
Part contact, which is formed, to be conducted.Beneficial effect by adopting the above technical scheme is: graphene transparency conducting layer is pasted by blocking
If reduction is attached to difficulty on silicon wafer, it is ensured that graphene transparency conducting layer is sufficiently contacted with secondary grid.
As shown in Fig. 3,8, in other embodiments of the invention, PET light-transmissive film 3 corresponds to each graphene conductive
Unit 21 be surrounded by indent lead glue groove 31, lead the excessive glue hole 311 for being equipped in glue groove 31 and extending through contralateral surface, lead glue groove
Conducting resinl 312 is consolidated in 31.Beneficial effect by adopting the above technical scheme is: what surrounding was arranged, which leads glue groove, can reduce conducting resinl
Graphene conductive unit stabilization is attached on silicon wafer by dosage by conducting resinl.
It is conductive in adjoining graphite alkene on PET light-transmissive film 3 in other embodiments of the invention as shown in Fig. 2,3,9
The interval region of unit 21 is equipped with multiple strike-through structural units 32, strike-through structural unit 32 be used for PET light-transmissive film and silicon wafer it
Between fill UV solidification glue 324；Strike-through structural unit 32 include PET light-transmissive film on main strike-through hole 321, be evenly arranged on main strike-through hole
Glue groove 323 is received between multiple dumping holes 322 around 321 and the main strike-through hole 321 of connection and dumping hole 322, main strike-through hole
321 and dumping hole 322 run through PET light-transmissive film, the surface that glue groove 323 of receiving is arranged in PET light-transmissive film and silicon wafer fits.Using upper
The beneficial effect for stating technical solution is: PET light-transmissive film stabilization being further adsorbed on silicon chip surface by UV solidification glue, prevents from moving
Position fold.
A kind of manufacturing method of graphene crystal silicon solar battery, comprising the following steps:
(1) a PET light-transmissive film is taken, such as Fig. 4 marks muti-piece for depositing graphene conductive unit on PET light-transmissive film 3
Region, lead glue groove 31 in each region surrounding etching indent, be punched excessive glue hole 311 in glue groove leading；It is led on PET light-transmissive film
The spacer etch star of glue groove be distributed with it is a plurality of receive glue groove 323, respectively receive glue groove convergence at the main strike-through hole 321 of punching,
Receive the diverging end of glue groove 323 is punched dumping hole 322 respectively；
(2) one first auxiliary film is taken, such as Fig. 5 is punched on the first auxiliary film 4 and matches with graphene conductive cell position
Frame shape through slot 41, and the first auxiliary film is sticked to the one side that PET light-transmissive film 3 needs to adhere to graphene conductive unit；
(3) such as Fig. 6, graphene solution is added in the groove body of frame-type through slot and PET the light-transmissive film formation of the first auxiliary film 4,
And be dried in vacuo and form graphene conductive list, 21；
(4) one second auxiliary film is taken, as shown in fig. 7, being punched into excessive glue hole on evacuation PET light-transmissive film on the second auxiliary film 5
Second auxiliary film 5 is sticked on PET light-transmissive film 3 and carries on the back in the surface of silicon wafer 1 by hollow-out parts 51；
(5) such as Fig. 7,8, the first auxiliary film 4 is removed, applying conductive glue 312 in glue groove is being led, PET light-transmissive film is sticked to silicon
Piece surface simultaneously compresses, and be heating and curing conducting resinl；
(6) such as Fig. 9, the second auxiliary film 5 is removed, UV solidification glue 324 is poured out of main strike-through hole, compresses PET light-transmissive film, finally
Ultra-violet curing.
Beneficial effect by adopting the above technical scheme is: improving the preparation efficiency of graphene transparency conducting layer and stabilization is sticked
To silicon chip surface, production cost is reduced.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow ordinary skill people
Member can understand the contents of the present invention and be implemented, it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.
Claims (7)
1. a kind of graphene crystal silicon solar battery, which is characterized in that including silicon wafer and be set to the positive electrode gate of the silicon chip surface
Line, the anode grid line includes a plurality of main grid being parallel to each other and the secondary grid perpendicular to the main grid；It further include that graphene is transparent
Conductive layer, the graphene transparency conducting layer are at least covered on the surface of the secondary grid.
2. graphene crystal silicon solar battery according to claim 1, which is characterized in that further include PET light-transmissive film, the stone
Black alkene transparency conducting layer is attached on the PET light-transmissive film, the PET light-transmissive film have graphene transparency conducting layer one side with
Silicon chip surface is mutually sticked.
3. graphene crystal silicon solar battery according to claim 2, which is characterized in that the graphene transparency conducting layer packet
The graphene conductive unit at multiple intervals is included, each graphene conductive unit can cover at least one secondary grid and be connected with the pair grid
Main grid part.
4. graphene crystal silicon solar battery according to claim 3, which is characterized in that the PET light-transmissive film corresponds to every
The glue groove of leading for being surrounded by indent of a graphene conductive unit, it is described to lead the excessive glue for being equipped in glue groove and extending through contralateral surface
Hole, described lead consolidate conducting resinl in glue groove.
5. graphene crystal silicon solar battery according to claim 4, which is characterized in that adjacent on the PET light-transmissive film
The interval region of graphene conductive unit is equipped with multiple strike-through structural units, and the strike-through structural unit is used in PET light-transmissive film
UV solidification glue is filled between silicon wafer.
6. graphene crystal silicon solar battery according to claim 5, which is characterized in that the strike-through structural unit includes
Main strike-through hole on PET light-transmissive film, the multiple dumping holes being evenly arranged on around the main strike-through hole and the connection main strike-through hole
Glue groove, the main strike-through hole and dumping hole are received through the PET light-transmissive film between dumping hole, and the glue groove of receiving is arranged in institute
State the surface that PET light-transmissive film and silicon wafer fit.
7. a kind of manufacturing method of graphene crystal silicon solar battery, brilliant for any graphene of manufacturing claims 1-6
Silicon solar cell, which comprises the following steps:
(1) a PET light-transmissive film is taken, muti-piece is marked on PET light-transmissive film for depositing the region of graphene conductive unit, each
Surrounding etching indent in region leads glue groove, and excessive glue hole is punched in glue groove leading；The spacer etch of glue groove is led on PET light-transmissive film
Star be distributed with it is a plurality of receive glue groove, respectively receive glue groove convergence at the main strike-through hole of punching, be punched respectively receiving the diverging end of glue groove
Dumping hole；
(2) one first auxiliary film is taken, the frame shape through slot to match with graphene conductive cell position is punched on the first auxiliary film, and
First auxiliary film is sticked to the one side that the PET light-transmissive film needs to adhere to graphene conductive unit；
(3) graphene solution is added in the groove body that the frame-type through slot of the first auxiliary film and PET light-transmissive film are formed, and is dried in vacuo shape
At graphene conductive unit；
(4) one second auxiliary film is taken, the hollow-out parts in excessive glue hole on evacuation PET light-transmissive film are punched on the second auxiliary film, it is auxiliary by second
Film is sticked on PET light-transmissive film and carries on the back in the surface of silicon wafer；
(5) the first auxiliary film is removed, applying conductive glue in glue groove is being led, PET light-transmissive film is sticked to silicon chip surface and is compressing, is heated
Curing conductive adhesive；
(6) the second auxiliary film is removed, UV solidification glue is poured out of main strike-through hole, compresses PET light-transmissive film, last ultra-violet curing.
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| CN201811629271.8A CN109449221B (en) | 2018-12-28 | 2018-12-28 | Graphene crystalline silicon solar cell and manufacturing method thereof |
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| CN109449221B CN109449221B (en) | 2024-04-09 |
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| US20130298976A1 (en) * | 2012-05-08 | 2013-11-14 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
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| CN103738943A (en) * | 2013-11-14 | 2014-04-23 | 南京新月材料科技有限公司 | Large area transparent conductive graphene film preparation method |
| US20150280026A1 (en) * | 2014-03-28 | 2015-10-01 | Boe Technology Group Co., Ltd. | Flexible transparent solar cell and production process of the same |
| CN104576080A (en) * | 2014-05-09 | 2015-04-29 | 中原工学院 | One-step electrochemical method for preparing graphene/polyaniline (PANI) flexible electrode |
| KR20160030659A (en) * | 2014-09-11 | 2016-03-21 | 주식회사 엘엠에스 | Graphene structure with enhanced electrical property |
| CN208028070U (en) * | 2017-11-24 | 2018-10-30 | 比亚迪股份有限公司 | A kind of solar battery sheet and battery chip arrays and component |
| CN108493280A (en) * | 2018-02-01 | 2018-09-04 | 苏州太阳井新能源有限公司 | A kind of solar cell and preparation method thereof of high surface conductance ability |
| CN209087857U (en) * | 2018-12-28 | 2019-07-09 | 苏州腾晖光伏技术有限公司 | A kind of graphene crystal silicon solar battery structure |
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