CN109449220A - Thin-film solar cells and preparation method thereof - Google Patents
Thin-film solar cells and preparation method thereof Download PDFInfo
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- CN109449220A CN109449220A CN201811423133.4A CN201811423133A CN109449220A CN 109449220 A CN109449220 A CN 109449220A CN 201811423133 A CN201811423133 A CN 201811423133A CN 109449220 A CN109449220 A CN 109449220A
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- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011889 copper foil Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000009466 transformation Effects 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 239000011733 molybdenum Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 132
- 238000000034 method Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- QZFJRYUBWMFRFJ-UHFFFAOYSA-N cadmium copper Chemical compound [Cu][Cd][Cd] QZFJRYUBWMFRFJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
This application involves a kind of thin-film solar cells, including substrate, back electrode layer, light absorbing layer, buffer layer, conducting window layer, the top electrode being cascading.Wherein back electrode layer includes first electrode layer and the second electrode lay, and the second electrode lay covers the first electrode layer, and the material of the second electrode lay is graphene film.Compared to traditional molybdenum electrode layer, this back electrode structure has the advantages that incident photon-to-electron conversion efficiency is high.And compared to individually using graphene film as back electrode, this back electrode structure can directly prepare graphene film in the first electrode layer, so that graphene film does not need to shift, preparation process is simplified while ensuring not lose transformation efficiency, therefore this back electrode structure has the advantages that preparation process is simple.In addition, the application further relates to a kind of preparation method of thin-film solar cells.
Description
Technical field
This application involves thin film solar cell fields, make the film of electrode too using graphene more particularly to a kind of
Positive energy battery and preparation method thereof.
Background technique
In global warming trend increasingly severe today, the clean energy resourcies such as solar energy also start to receive significant attention.Too
Positive energy battery is also got more and more attention as a kind of photoelectric conversion device, research with application.Of greatest concern at present is to include
The thin-film solar cells of amorphous/microcrystal silicon, cadmium telluride or copper-indium-gallium-selenium compound.Because this solar battery has a variety of
Advantage, for example, thin-film solar cells has many advantages, such as that at low cost, quality is light, flexibility is good, the absorption coefficient of light is high.But it is thin
The incident photon-to-electron conversion efficiency of film solar cell is lower, this problem is also a present master for hindering thin-film solar cells development
Want problem.
For a long time, in order to solve this problem, people attempt the structure of improvement thin-film solar cells to improve photoelectricity
Transformation efficiency.For example, the poroid electrode of setting nanometer, the material for changing light absorbing layer, change electrode material etc..But these methods
There is a universal problem, exactly makes the complex manufacturing technology of thin-film solar cells.Therefore, existing incident photon-to-electron conversion efficiency
Higher thin-film solar cells has the problem of complex manufacturing technology.
Summary of the invention
Based on this, it is necessary to lower, complex manufacturing technology for existing thin-film solar cell photoelectric transformation efficiency to ask
Topic, provides the thin-film solar cells and preparation method thereof that a kind of transformation efficiency is higher and manufacture craft is relatively simple.
A kind of thin-film solar cells, comprising:
Substrate；
Back electrode layer, covers the substrate, including first electrode layer and the second electrode lay, and the second electrode lay covers institute
First electrode layer is stated, and the material of the second electrode lay is graphene film；
Light absorbing layer covers the second electrode lay；
Buffer layer covers the light absorbing layer；
Conducting window layer covers the buffer layer；
Top electrode is set to side of the conducting window layer far from the buffer layer.
Above-mentioned thin-film solar cells, the back electrode layer are made of first electrode layer and the second electrode lay, and the second electricity
Pole layer uses graphene film.Compared to traditional molybdenum electrode layer, this back electrode structure has not only been saved molybdenum raw material, has been reduced
Production cost, also adds the light transmittance of back electrode, therefore has the advantages that incident photon-to-electron conversion efficiency is high.In addition, described first
One layer of graphene film is grown on electrode layer as the second electrode lay, graphene film, can be significant as hole transport electrode
Carrier transport rate is improved, to improve incident photon-to-electron conversion efficiency.And compared to individually using graphene film as back electrode,
This back electrode structure can directly prepare graphene film in the first electrode layer, so that graphene film does not need to turn
It moves, preparation process is simplified while ensuring not lose transformation efficiency, therefore this back electrode structure has preparation process letter
Single advantage.
The material of the first electrode layer is copper in one of the embodiments, and with a thickness of 20-30 μm.
The material of the light absorbing layer is copper indium gallium selenide, copper indium selenide, cadmium telluride, GaAs in one of the embodiments,
And/or one of perovskite.
The thin-film solar cells further includes barrier layer in one of the embodiments, be set to the buffer layer and
Between the conducting window layer.
The thin-film solar cells further includes reflecting layer in one of the embodiments, and it is separate to be set to the substrate
The one side of the back electrode layer.
In embodiment provided by the present application, be arranged the barrier layer can effectively stop electronics enter the back electrode layer and
The light absorbing layer can also increase the transformation efficiency of the thin-film solar cells.Furthermore it is also possible to separate in the substrate
The reflecting layer is arranged in the one side of the back electrode layer, and the light that can pass through the thin film solar cell reflects back, and increases
Illumination rate, to increase the transformation efficiency of the thin-film solar cells.
A kind of preparation method of thin-film solar cells, comprising the following steps:
S10, prepares back electrode layer, and preparation method is that graphene film is grown in the first electrode layer as the second electricity
Pole layer；
S20 attaches the first electrode layer on substrate far from the one side of the second electrode lay；
S30 prepares light absorbing layer on the second electrode lay；
S40 prepares buffer layer on the light absorbing layer；
S50 prepares conducting window layer on the buffer layer；
S60 prepares top electrode on the conducting window layer.
The preparation method of above-mentioned thin-film solar cells directly prepares graphene film in the first electrode layer, so that
Graphene film does not need to shift, will not graphene film and the first electrode layer it is intermediate formed defect and it is compound in
The heart.Preparation process is simplified while ensuring not lose transformation efficiency.
In one of the embodiments, in the S10, made in the first electrode layer using chemical vapour deposition technique
The standby the second electrode lay.
In one of the embodiments, the S10 the following steps are included:
S11 polishes the first electrode layer surface.
S12 cleans the surface of the first electrode layer.
S13, deposition generates the second electrode lay in the first electrode layer.
S14 cools down the first electrode layer and the second electrode lay to room temperature.
In one of the embodiments, between step S40 and step S50 comprising steps of S70, on the buffer layer
Prepare the barrier layer.
S80 is further comprised the steps of: after step S60 in one of the embodiments, prepares the reflecting layer.
In embodiment provided by the present application, using process for preparing graphenes by chemical vapour deposition film, in the preparation, including throw
Light, surface cleaning, cooling, so that graphene is preferably attached in the first electrode layer, to increase this side
The incident photon-to-electron conversion efficiency for the thin-film solar cells that method prepares.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the thin-film solar cells provided in the application one embodiment；
Fig. 2 is the schematic diagram of the section structure of the thin-film solar cells provided in another embodiment of the application；
Fig. 3 is the flow chart of the thin-film solar cells preparation method provided in the application one embodiment；
Fig. 4 is the flow chart of the thin-film solar cells preparation method provided in another embodiment of the application.Symbol is said
It is bright:
Thin-film solar cells 100
Substrate 110
Back electrode layer 120
First electrode layer 121
The second electrode lay 122
Light absorbing layer 130
Buffer layer 140
Conducting window layer 150
Top electrode 160
Barrier layer 170
Reflecting layer 180
Specific embodiment
In order to keep the application objects, features and advantages of the application more obvious and easy to understand, with reference to the accompanying drawing to this Shen
Specific embodiment please is described in detail.Many details are explained in the following description in order to fully understand this
Application.But the application can be implemented with being much different from other way described herein, those skilled in the art can be
Without prejudice to doing similar improvement in the case where the application intension, therefore the application is not limited by the specific embodiments disclosed below.
It should be noted that it can directly on the other element when element is referred to as " being set to " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and the technical field for belonging to the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.
Referring to Figure 1, the application provides a kind of thin-film solar cells 100, including substrate 110, back electrode layer 120, light
Absorbed layer 130, buffer layer 140, conducting window layer 150 and top electrode 160.
The back electrode layer 120 covers the substrate 110.The back electrode layer 120 includes first electrode layer 121 and second
Electrode layer 122.The second electrode lay 122 covers the first electrode layer 121.And the material of the second electrode lay 122 is
Graphene film.The light absorbing layer 130 covers the second electrode lay 122.The buffer layer 140 covers the light absorbing layer
130.The conducting window layer 150 covers the buffer layer 140.It is remote that the top electrode 160 is set to the conducting window layer 150
Side from the buffer layer 140.
The material of the substrate 110 can be metal, glass, transparent polymer etc..In one embodiment, the substrate
110 material can be stainless steel.In general, the thickness of the substrate 110 can be 50 μm.
The back electrode layer 120 includes first electrode layer 121 and the second electrode lay 122.The material of the first electrode layer 121
Material can be metal, glass, transparent polymer etc..In one embodiment, the first electrode layer 121 can be copper foil.And
The purity of copper foil can be 99.8%, and thickness can be 25 μm.The material of the second electrode lay 122 is graphene film.?
In one embodiment, the graphene film is single thin film structure.
The light absorbing layer 130 is converted solar energy into electrical energy for absorbing solar energy.The light absorbing layer 130 can
Think any photovoltaic material.In one embodiment, the material of the light absorbing layer 130 can be copper indium gallium selenide, copper indium selenide, tellurium
One of cadmium, GaAs and/or perovskite.In one embodiment, the light absorbing layer 130 with a thickness of 0.5 μm~1
μm。
The material of the buffer layer 140 can be zinc sulphide, cadmium sulfide or indium sulfide etc..In one embodiment, institute
The material for stating buffer layer 140 can be cadmium sulfide.The thickness of the buffer layer 140 can be 80nm.The conducting window layer 150
Material can be for zinc oxide, indium oxide or tin oxide etc..In one embodiment, the material of the conducting window layer 150
For tin indium oxide.The thickness of the conducting window layer 150 can be 40nm.The material of the top electrode 160 can for silver, aluminium,
Gold, nickel, copper, titanium-tungsten or nickel alumin(i)um alloy etc..In one embodiment, the material of the top electrode 160 is nickel alumin(i)um alloy.
The thickness of the top electrode 160 can be 50 μm.
Fig. 2 is referred to, in one embodiment, the thin-film solar cells 100 can also include barrier layer 170.Institute
Barrier layer 170 is stated to be set between the buffer layer 140 and the conducting window layer 150.The barrier layer 170 is for stopping electricity
Son enters the light absorbing layer 130 and the second electrode lay 122.The material on the barrier layer 170 can be intrinsic zinc oxide.
In one embodiment, the thin-film solar cells 100 further includes reflecting layer 180.The reflecting layer 180 is arranged
In one side of the substrate 110 far from the back electrode layer 120.The distance between the reflecting layer 180 and the substrate 110 can
To be adjustable.The reflectance coating in the reflecting layer 180 can be silver, aluminium, titanium dioxide or silicon dioxide film.
Fig. 3 is referred to, a kind of preparation method of thin-film solar cells 100 is provided in the application one embodiment.It is described
The preparation method of thin-film solar cells 100 includes the following steps:
S10, makes the back electrode layer 120, and production method is to grow graphene film in the first electrode layer 121
As the second electrode lay 122.
In step S10, the second electrode lay 122 grows completion directly in the first electrode layer 121, does not need to turn
It moves.In one embodiment, the second electrode lay is prepared in the first electrode layer 121 using chemical vapour deposition technique
122.In the present embodiment, the step S10 the following steps are included:
S11 polishes 121 surface of first electrode layer.
In step S11, the first electrode layer 121 can be the copper foil with a thickness of 25 μm.In the present embodiment, using electricity
Chemically polishing method polishes 121 surface of first electrode layer.And the phosphoric acid solution that polishing process is 85% in concentration
Middle completion.In the present embodiment, after polishing, the rms surface roughness of the first electrode layer 121 is less than 15nm.
S12 cleans the surface of the first electrode layer 121.
In step S12, the first electrode layer 121 after polishing is placed in low-pressure chemical vapor deposition system.Institute
First electrode layer 121 is stated to be placed in the hydrogen stream of 10sccm.The first electrode layer 121 is heated to 1050 DEG C simultaneously,
And it is kept for 60 minutes.The cleaning first electrode layer 121 is thus achieved the effect that.
S13, deposition generates the second electrode lay 122 in the first electrode layer 121.
In step S13, the first electrode layer 121 after cleaning is placed in methane and hydrogen is respectively 10 and 5sccm
In mixed gas.Reaction generates graphene film in the first electrode layer 121 simultaneously.When reaction, the first electrode layer
In 121 pressure in 90 person of outstanding talent's supports.The reaction time for generating graphene film is 15 minutes.In the present embodiment, the graphite of generation
Alkene film is single-layer graphene film.
S14 cools down the first electrode layer 121 and the second electrode lay 122 to room temperature.
In step S14, the first electrode layer 121 and the newly-generated the second electrode lay 122 are placed in hydrogen.
It is rapidly cooled to room temperature the temperature of the first electrode layer 121 and the second electrode lay 122 simultaneously.
S20, by the first electrode layer 121 be attached on substrate 110 on one side far from the second electrode lay 121.
In step S20, the material of the substrate 110 can be metal, glass, transparent polymer etc..In one embodiment
In, the material of the substrate 110 can be stainless steel.In general, the thickness of the substrate 110 can be 50 μm.
S30 prepares the light absorbing layer 130 on the second electrode lay 122.In one embodiment, in step S30
In, the light absorbing layer 130 is prepared using magnetron sputtering method.
S40 prepares the buffer layer 140 on the light absorbing layer 130.In one embodiment, in step s 40,
The buffer layer 140 is prepared using chemical bath.
S50 prepares the conducting window layer 150 on the buffer layer 140.In one embodiment, in step S50
In, the conductive window 150 is prepared using the method for r. f. magnetron sputtering.Whole preparation process is completed in argon gas.?
In the present embodiment, the conducting window layer 150 of preparation with a thickness of 300nm.
S60 prepares the top electrode 160 on the conductive window 150.In one embodiment, in step S60,
The top electrode 160 is prepared using the method for deposition.In the present embodiment, the material of the top electrode 160 is nickel alumin(i)um alloy.
Fig. 4 is referred to, the preparation method of the thin-film solar cells 100 in one embodiment further includes step S70.
Step S70 is that the barrier layer 170 is prepared on the buffer layer 140.The step S70 step S40 and step S50 it
Between.
The preparation method of the thin-film solar cells 100 in one embodiment further includes step S80.Step S80 is
Prepare the reflecting layer 180.The step S80 is after step S60.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of thin-film solar cells (100) characterized by comprising
Substrate (110)；
Back electrode layer (120) covers the substrate (110), including first electrode layer (121) and the second electrode lay (122), described
The second electrode lay (122) covers the first electrode layer (121), and the material of the second electrode lay (122) is that graphene is thin
Film；
Light absorbing layer (130) covers the second electrode lay (122)；
Buffer layer (140) covers the light absorbing layer (130)；
Conducting window layer (150) covers the buffer layer (140)；
Top electrode (160) is set to the side of the conducting window layer (150) far from the buffer layer (140).
2. thin-film solar cells (100) according to claim 1, which is characterized in that the first electrode layer (121)
Material is copper, and with a thickness of 20-30 μm.
3. thin-film solar cells (100) according to claim 1, which is characterized in that the material of the light absorbing layer (130)
Material is one of copper indium gallium selenide, copper indium selenide, cadmium telluride, GaAs and/or perovskite.
4. thin-film solar cells (100) according to claim 1, which is characterized in that it further include barrier layer (170), if
It is placed between the buffer layer (140) and the conducting window layer (150).
5. thin-film solar cells (100) according to claim 1, which is characterized in that it further include reflecting layer (180), if
It is placed in the one side of the substrate (110) far from the back electrode layer (120).
6. a kind of preparation method of thin-film solar cells (100), which comprises the following steps:
S10 is prepared back electrode layer (120), and preparation method is that graphene film conduct is grown on the first electrode layer (121)
The second electrode lay (122)；
S20, by the first electrode layer (121) be attached on substrate (110) on one side far from the second electrode lay (121)；
S30 prepares light absorbing layer (130) on the second electrode lay (122)；
S40 prepares buffer layer (140) on the light absorbing layer (130)；
S50 prepares conducting window layer (150) on the buffer layer (140)；
S60 prepares top electrode (160) on the conductive window (150).
7. the preparation method of thin-film solar cells (100) according to claim 6, which is characterized in that the substrate
(110) stainless steel material is used, the first electrode layer (121) is copper foil.
8. the preparation method of thin-film solar cells (100) according to claim 6, which is characterized in that the S10 includes
Following steps:
S11 polishes the first electrode layer (121) surface；
S12 cleans the surface of the first electrode layer (121)；
S13, deposition generates the second electrode lay (122) on the first electrode layer (121)；
S14 cools down the first electrode layer (121) and the second electrode lay (122) to room temperature.
9. the preparation method of thin-film solar cells (100) as claimed in claim 6, which is characterized in that in step S40 and step
Between rapid S50 comprising steps of
S70 prepares the barrier layer (170) on the buffer layer (140).
10. the preparation method of thin-film solar cells (100) as claimed in claim 6, which is characterized in that step S60 it
After further comprise the steps of:
S80 prepares the reflecting layer (180).
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| CN104659115A (en) * | 2013-11-21 | 2015-05-27 | 台积太阳能股份有限公司 | Solar cell contacts and method of fabricating same |
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