CN109424761A - Isolation valve, semiconductor production equipment and cleaning method thereof - Google Patents
Isolation valve, semiconductor production equipment and cleaning method thereof Download PDFInfo
- Publication number
- CN109424761A CN109424761A CN201710771566.8A CN201710771566A CN109424761A CN 109424761 A CN109424761 A CN 109424761A CN 201710771566 A CN201710771566 A CN 201710771566A CN 109424761 A CN109424761 A CN 109424761A
- Authority
- CN
- China
- Prior art keywords
- taper type
- valve body
- hole
- valve
- supply air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000002955 isolation Methods 0.000 title abstract 6
- 238000010926 purge Methods 0.000 claims abstract description 47
- 239000007789 gas Substances 0.000 claims description 51
- 239000000047 product Substances 0.000 claims description 28
- 239000007795 chemical reaction product Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 7
- 239000013049 sediment Substances 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000003371 toe Anatomy 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/02—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with tubular diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
- F16K27/0236—Diaphragm cut-off apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides an isolation valve, semiconductor production equipment and a cleaning method thereof, wherein the isolation valve comprises: the valve body is internally provided with a through hole which is communicated along the axial direction of the valve body, and the diameter of the through hole is gradually reduced from the first end of the valve body to the second end of the valve body; the sealing component comprises a frustum-shaped corrugated pipe and an end cover; the length of the frustum-shaped corrugated pipe is less than or equal to that of the through hole; the end cover is fixed at the first end of the frustum-shaped corrugated pipe; and the gas purging system comprises a gas supply pipeline and at least one nozzle. The isolating valve has no dead angle, sediment and cleaning products are not easy to deposit in the isolating valve, and no turbulent flow is generated when the pressure changes; the sediment deposited in the isolation valve and cleaning products can be cleaned out of the isolation valve through the gas purging system; therefore, pollution to products is avoided, the yield of the products is improved, and meanwhile, the maintenance frequency of the isolation valve can be greatly reduced.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, more particularly to a kind of isolating valve, semiconductor production equipment and its
Cleaning method.
Background technique
During carrying out film deposition using existing depositing device, reaction product can be accumulated in reaction chamber
It is internal and fall in the isolating valve of depositing device;After deposition is complete, using remote plasma system (RPS, Remote
Plasma system) when being cleaned to reaction chamber, cleaning product can also be fallen in the isolating valve.However, existing
Isolating valve include it is internal be equipped with axially through columnar through holes valve body and the column bellows that is inserted into the through-hole, this
The air-flow for allowing for cleaning can encounter 90 ° of dog-ears in the isolating valve, lead to flow-disturbing and technological reaction product and cleaning
Product is at the gap and 90 ° of dog-ears between the bellows and the valve body;This makes the pressure needed for subsequent offer technique
When power, the reaction product being deposited in the isolating valve and cleaning product can be brought into the reaction chamber by the flow-disturbing of generation
Interior is polluted to the product handled in the reaction chamber is located at, so that the yield of product declines.And the isolating valve holds
Easily cause the blocking of the isolating valve within a short period of time, need periodically to carry out maintenance clean to the isolating valve, it is described every
It is higher from the frequency of maintenance of valve, it is low in turn result in production efficiency.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of isolating valves, semiconductor production
Equipment and its cleaning method are easy in isolating valve for solving reaction product existing in the prior art and cleaning product
Deposition, and then the indoor product of reaction chamber can be polluted, so that the problem of yield of product declines and isolating valve need
Frequency of maintenance is higher, maintenance period is shorter, thus the problem for causing production efficiency low.
To achieve the above object and other related purposes, the present invention provide a kind of isolating valve, and the isolating valve includes:
Valve body, the valve body include opposite first end and second end;Be equipped in the valve body along its axially through it is logical
Hole, and the diameter of the through-hole is gradually reduced from the valve body first end to the valve body second end;It is set at the top of the valve body
There is installing port, the installing port is connected with the through-hole;
Seal member, the seal member include taper type bellows and end cap;The taper type bellows includes opposite
First end and second end, the taper type bellows is suitable for being inserted into the through-hole from the first end of the valve body, and described
The length of taper type bellows is less than or equal to the length of the through-hole;The end cap is fixed on the of the taper type bellows
One end, and the lateral dimension of the end cap is greater than the maximum gauge of the through-hole;And
Gas purge system, the gas purge system include supply air line and an at least nozzle;The supply air line passes through
The end cap is worn, one end is connected with an air supply source, and the other end extends at the first end of the taper type bellows;The spray
Mouth is located at the end cap close to the side of the taper type bellows, is connected with the supply air line, and the nozzle is to described
The distance at taper type bellows first end center is less than the maximum gauge of the through-hole, and is greater than the taper type bellows first
The diameter at end.
As a preferred solution of the present invention, the angle of the top sidewall of the through-hole and the body top be 8 °~
25 °, the bottom sidewall of the through-hole and the angle of the body base are 3 °~15 °.
As a preferred solution of the present invention, the distance of the installing port to the valve body first end is less than the installation
Mouthful to the valve body second end distance.
As a preferred solution of the present invention, the taper type bellows include the first columnar part, the second columnar part and
Taper type corrugated part;The taper type corrugated regions between first columnar part and second columnar part, and with it is described
First columnar part and second columnar part are fixedly connected, and the diameter of the taper type corrugated part is from first columnar part to institute
The second columnar part is stated to be gradually reduced;End face of first columnar part far from the taper type corrugated part and the fixed company of the end cap
It connects.
As a preferred solution of the present invention, first columnar part, second columnar part and the taper type wave
Line portion is an integral molding structure.
As a preferred solution of the present invention, the supply air line includes main supply air line and at least two branch air supply pipes
The one end on road, the main supply air line is connected with the air supply source, and the other end is connected with the branch supply air line;
The quantity of the nozzle is identical as the quantity of the branch supply air line, each nozzle respectively with corresponding institute
Branch supply air line is stated to be connected;The nozzle is in circumferentially distributed close to the end face of the taper type bellows in the end cap, and
Being oriented for all nozzles is clockwise or counterclockwise.
The present invention also provides a kind of semiconductor production equipment, the semiconductor production equipment includes:
Reaction chamber, cleaning system, isolating valve, throttle valve and vacuum pump;In the cleaning system and the reaction chamber
Portion is connected, for cleaning inside the reaction chamber;Installing port in the isolating valve via a gas piping with
The inside of the reaction chamber is connected, wherein the isolating valve includes:
Valve body, the valve body include opposite first end and second end;Be equipped in the valve body along its axially through it is logical
Hole, and the diameter of the through-hole is gradually reduced from the valve body first end to the valve body second end;It is set at the top of the valve body
There is installing port, the installing port is connected with the through-hole;
Seal member, the seal member include taper type bellows and end cap;The taper type bellows includes opposite
First end and second end, the taper type bellows is suitable for being inserted into the through-hole from the first end of the valve body, and described
The length of taper type bellows is less than or equal to the length of the through-hole;The end cap is fixed on the of the taper type bellows
One end, and the lateral dimension of the end cap is greater than the maximum gauge of the through-hole;And
Gas purge system, the gas purge system include supply air line and an at least nozzle;The supply air line passes through
The end cap is worn, one end is connected with an air supply source, and the other end extends at the first end of the taper type bellows;The spray
Mouth is located at the end cap close to the side of the taper type bellows, is connected with the supply air line, and the nozzle is to described
The distance at taper type bellows first end center is less than the maximum gauge of the through-hole, and is greater than the taper type bellows first
The diameter at end;
Also, the throttle valve is located at the second end of the valve body;The vacuum pump is via a gas piping and the section
Stream valve and the isolating valve are connected.
As a preferred solution of the present invention, the gas purge system is nitrogen purge system.
As a preferred solution of the present invention, the cleaning system is remote plasma system;The semiconductor is raw
Producing equipment includes furnace tube device.
The present invention also provides a kind of cleaning method of semiconductor production equipment, the cleaning method of the semiconductor production equipment
Include the following steps:
1) semiconductor production equipment as described in above scheme is provided;
2) after the completion of depositing operation, the reaction chamber is cleaned using the cleaning system, described in removing
The deposit of remaining reaction gas and the reaction chamber inner wall in reaction chamber;Meanwhile using the gas purge system
To being purged inside the isolating valve, to remove the reaction product fallen in the isolating valve and cleaning product.
The present invention also provides a kind of semiconductor technology method, the semiconductor technology method includes the following steps:
1) semiconductor production equipment as described in above scheme is provided;
2) wafer is sent in the reaction chamber, the surface deposition film of Yu Suoshu wafer;
3) wafer is spread out of from the reaction chamber;
4) reaction chamber is cleaned using the cleaning system, it is remaining anti-in the reaction chamber to remove
Answer the deposit of gas and the reaction chamber inner wall;Meanwhile using the gas purge system to inside the isolating valve into
Row purging, to remove the reaction product fallen in the isolating valve and cleaning product.
As described above, isolating valve provided by the invention, semiconductor production equipment and its cleaning method, have below beneficial to effect
Fruit: bellows is set as fitting with the through-hole by isolating valve of the invention by setting taper type for the intracorporal through-hole of valve
The taper type matched, so that be not easy to deposit in the isolating valve without dead angle, deposit and cleaning product in the isolating valve, and
Flow-disturbing will not be generated in pressure change;By the way that gas purge system is arranged in the isolating valve, purged by the gas
System can to being purged inside the isolating valve, can by the deposit deposited in the isolating valve and cleaning product from
It is cleared up away in the isolating valve;To avoid polluting product, the yield of product is improved, while can greatly reduce
The frequency of maintenance of isolating valve.
Detailed description of the invention
Fig. 1 is shown as the fractionation structural representation of the isolating valve provided in the embodiment of the present invention one.
Fig. 2 is shown as the right view of the seal member in the isolating valve provided in the embodiment of the present invention one.
Fig. 3 is shown as the structural schematic diagram of the semiconductor production equipment provided in the embodiment of the present invention two.
Fig. 4 to fig. 6 is shown as the working principle diagram of the semiconductor production equipment provided in the embodiment of the present invention two.
Fig. 7 is shown as the flow chart of the cleaning method of the semiconductor production equipment provided in the embodiment of the present invention three.
Fig. 8 is shown as the flow chart of the semiconductor technology method provided in the embodiment of the present invention four.
Reference numerals explanation
1 isolating valve
11 valve bodies
The first end of 111 valve bodies
The second end of 112 valve bodies
113 through-holes
14 installing ports
12 seal members
121 taper type bellowss
122 end caps
123 first columnar parts
124 second columnar parts
125 taper type corrugated parts
13 gas purge systems
131 supply air lines
132 nozzles
133 main supply air lines
134 supply air lines
135 purge streams
2 reaction chambers
3 cleaning systems
31 purge flows
4 throttle valves
5 gas pipings
51 reflux airflows
6 pedestals
7 wafers
8 reaction products
9 cleaning products
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands further advantage and effect of the invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 8.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of isolating valve 1, the isolating valve 1 includes: valve body 11, and the valve body 11 includes
Opposite first end and second end;Be equipped in the valve body 11 along its axially through through-hole 113, and the through-hole 113 is straight
The second end 112 of the first end 111 of the valve body 11 to the valve body 11 is gradually reduced without leave;The top of the valve body 11 is equipped with
Installing port 114, the installing port 114 are connected with the through-hole 113;Seal member 12, the seal member 12 include frustum
Shape bellows 121 and end cap 122;The taper type bellows 121 includes opposite first end and second end, the taper type wave
Line pipe 121 is suitable for being inserted into the through-hole 113 from the first end 111 of the valve body 11, and the length of the taper type bellows 121
Degree is less than or equal to the length of the through-hole 113, to ensure that the taper type bellows 121 is fully inserted into the through-hole
In 113;The end cap 122 is fixed on the first end of the taper type bellows 121, and the lateral dimension of the end cap 122 is big
In the maximum gauge of the through-hole 113, (i.e. described taper type wave when ensuring that the seal member 12 is combined with the valve body 11
When line pipe 121 is inserted into the through-hole 113), the end cap 122 can will be located at the logical of the first end 111 of the valve body 11
Hole 113 blocks completely;And gas purge system 13, the gas purge system 13 include supply air line 131 and an at least nozzle
132;The supply air line 131 runs through the end cap 122, and one end is connected with an air supply source (not shown), and the other end extends to
At the first end of the taper type bellows 121;The nozzle 132 is located at the end cap 122 close to the taper type bellows
121 side is connected with the supply air line 131, the nozzle 132 to the 121 first end center of taper type bellows
Distance be less than the through-hole 113 maximum gauge, and be greater than 121 first end of taper type bellows diameter, to ensure
When the seal member 12 is combined with the valve body 11, the nozzle 132 is located at the conical corrugated pipe 121 and the valve body 11
Between gap in.
As an example, the angle α at 11 top of the top sidewall of the through-hole 113 and the valve body is 8 °~25 °, specifically
, the top sidewall of the through-hole 113 between the installing port 114 and the second end 112 of the valve body 11 with it is described
The angle α at 11 top of valve body is 8 °~25 °, it is preferable that the angle at 11 top of the top sidewall of the through-hole 113 and the valve body
α is 10 °~20 °;The angle β of the bottom sidewall of the through-hole 113 and 11 bottom of valve body is 3 °~15 °, it is preferable that described
The angle β of the bottom sidewall of through-hole 113 and 11 bottom of valve body is 5 °~10 °.The inner wall of the through-hole 113 is set as inclining
Oblique inner wall can make the through-hole 113 in streamline shape, so that 90 ° of dead angles are not present in the valve body 11, it is possible to prevente effectively from
Deposition in the isolating valve 1 of reaction product and cleaning product, and will not inside it pressure change when generate flow-disturbing.
As an example, the diameter of the second end 112 of the valve body 11 can be set according to actual needs, it is preferable that
In the present embodiment, the diameter of the second end 112 of the valve body 11 can be but be not limited only to 1 inch~6 inches.
As an example, first end 111 of the installing port 114 close to the valve body 11, i.e., the described installing port 114 is to described
Distance of the distance of the first end 111 of valve body 11 less than the second end 112 of the installing port 114 to the valve body 11.
As an example, the through-hole 113 of the first end 111 in the valve body 11 to 114 part of installing port pushes up
Portion is linearly, and bottom is linear in acclivitous inclination, i.e. the gradual change of the diameter of the through-hole 113 of the part is due to this
Caused by the bottom of the partial through-hole 113 is oblique.
As an example, the shape of the installing port 114 can be set according to actual needs, the installing port 114
Shape can be square, round, oval etc.;Preferably, in the present embodiment, the shape of the installing port 114 is circle,
The diameter of the installing port 114 can be but be not limited only to 1 inch~6 inches.
As an example, the taper type bellows 121 includes the first columnar part 123, the second columnar part 124 and taper type wave
Line portion 125;The taper type corrugated part 125 between first columnar part 123 and second columnar part 124, and with
First columnar part 123 and second columnar part 124 are fixedly connected, i.e., described first columnar part 123, the taper type wave
Line portion 125 and second columnar part 124 are fixedly connected sequentially, and the diameter of the taper type corrugated part 125 is from first column
Shape portion 123 to second columnar part 124 is gradually reduced;First columnar part 123 is far from the taper type corrugated part 125
End face is fixedly connected with the end cap 122.First columnar part 123 is set by the diameter of the taper type corrugated part 125
It is gradually reduced to second columnar part 124, it is possible to reduce the contact surface of the taper type bellows 121 and the valve body 11
Product, so that having enough gaps therebetween;Meanwhile so that the taper type bellows 121 is in streamline shape, with the through-hole
113 cooperations, it is possible to prevente effectively from the deposition of reaction product and cleaning product in the isolating valve 1, and will not be in it
Flow-disturbing is generated when portion's pressure change.
As an example, first columnar part 123, second columnar part 124 and the taper type corrugated part 125 can be with
For but be not limited only to integrated formed structure.
As an example, incorporated by reference to Fig. 1 referring to Fig.2, the supply air line 131 may include main supply air line 133 and at least
One end of two branch supply air lines 134, the main supply air line 133 is connected with the air supply source, and the other end and the branch supply
Air pipe 134 is connected;The quantity of the nozzle 132 is identical as the quantity of the branch supply air line 134, each nozzle 132
It is connected respectively with the corresponding branch supply air line 134;The nozzle 132 is in the end cap 122 close to the frustum
Shape ripple, 125 end face in circumferentially distributed, and all nozzles 132 be oriented it is clockwise or counterclockwise,
In, using the direction of two nozzles 132 in counterclockwise as example in Fig. 2.It sets the quantity of the nozzle 132 to
At least two, and the direction of all nozzles 132 is set as clockwise or counterclockwise, it can be ensured that it is all described
The purge stream that nozzle 132 ejects helically spray by umbrella, to improve purging effect.
Certainly, in other examples, the quantity of the branch supply air line 134 and the quantity of the nozzle 132 can be with roots
Be set as one according to actual needs, may be set to be three, four, five, six etc. it is multiple.
It should be noted that in the examples described above, the of the direction of the nozzle 132 and the taper type bellows 121
The end face of one end is parallel, certainly, in other examples, the direction or and the taper type ripple of the nozzle 132
The end face of the first end of pipe 121 is in oblique direction, when the direction that ensure all nozzles 132 is directed away from the end cap
122 direction, and to ensure that the direction of all nozzles 132 is all along the end face of the first end of the taper type bellows 121
To being in same direction, that is, ensure that the gas of all ejections of the nozzles 132 cannot generate mutually interference.
As an example, the gas purge system 13 can be nitrogen purge system;Certainly, in other examples, described
Gas purge system 13 can also be dry air purge system etc..
Embodiment two
Referring to Fig. 3, the semiconductor production equipment includes: reaction the present invention also provides a kind of semiconductor production equipment
Chamber 2;It is connected inside cleaning system 3, the cleaning system 3 and the reaction chamber 2, for in the reaction chamber 2
Portion is cleaned;The isolating valve 1 as described in embodiment one, installing port 114 in the isolating valve 1 via a gas piping with
The inside of the reaction chamber 2 is connected, and the specific structure of the isolating valve 1 please refers to embodiment one, is not repeated herein;Section
Valve 4 is flowed, the throttle valve 4 is located at the second end 112 of the valve body 11;Vacuum pump (not shown), via a gas piping 5 and institute
It states throttle valve 4 and the isolating valve 1 is connected.
As an example, the cleaning system can be but be not limited only to remote plasma system.
As an example, the semiconductor production equipment further includes the pedestal 6 for placing wafer 7, the pedestal 6 can be non-
Rotating basis, or rotatable base, when the pedestal 6 is rotatable base, drive of the pedestal 6 in driving device
The wafer 7 placed thereon can be driven to rotate together under dynamic.In other examples, can also be arranged on the pedestal 6
There is sucker, the wafer 7 is located on the sucker, and the sucker can be electrostatic chuck, or vacuum chuck.
As an example, the semiconductor production equipment can be the furnace tube device including chemical vapor depsotition equipment.
By taking chemical vapor depsotition equipment as an example, the working principle of semiconductor production equipment of the invention are as follows:
Firstly, being passed through in Xiang Suoshu reaction chamber 2 anti-referring to Fig. 4, untreated wafer 7 is placed on the pedestal 6
Gas is answered, the reaction gas can be TOES (tetraethoxysilane) and O2Mixed gas, SiH4With NH3Mixed gas
Or SiH4With N2At least one of three kinds of mixed gas of mixed gas of O deposit to form film with the surface in the wafer 7;
During the reaction, reaction product 8 can be fallen in the isolating valve 1 from the reaction chamber 2, and for example reaction generates
Silica or silicon nitride etc..At this point, the cleaning system 3 is closed, not to 2 internal washing of reaction chamber.
Secondly, referring to Fig. 5, the wafer 7 is spread out of out of described reaction chamber 2;The cleaning system 3 is opened, it is right
It is cleaned in the reaction chamber 2, purge gas can be but be not limited only to the ionization of argon gas Yu Nitrogen trifluoride mixed gas
Gas, the purge flow 31 that the cleaning system 3 sprays are as shown in Figure 5;During cleaning, purge flow with remain in
Residue in the reaction chamber 2 reacts with by the removing residues in the reaction chamber 2, but in the process of cleaning
In, purge flow can react with residue generation cleaning product 9 fall in the isolating valve 1, cleaning product can
Think ocratation, silica, silicon nitride etc.;It is same being cleaned using the cleaning system 3 to the reaction chamber 2
When, the gas purge system 13 is opened, the gas purge system 13 is via the supply air line 131 and the nozzle 132
It is passed through purge gas into the isolating valve 1, falls to the reaction product 8 in the isolating valve 1 and cleaning life
The isolating valve 1 is carried under the purging of the purge gas at object 9, and is taken at vacuum pump via the gas piping 5
The purge stream 135 of discharge, purge gas is as shown in Figure 5.
Again, referring to Fig. 6, another untreated wafer 7 is placed on the pedestal 6, it is the surface of the wafer 7
It is formed before film, the pressure in the reaction chamber 2 is adjusted by the vacuum pump and the throttle valve 4, at this point, having back
Stream 51 is back in the reaction chamber 2, the reaction product 8 due to depositing in the isolating valve 1 and cleaning product 9
It has been be completely removed that, do not have impurity and brought by the reflux airflow 51 to being polluted to wafer 2 in the reaction chamber 2.
After adjusting the pressure in the reaction chamber 2, that is, execute the step as corresponding to Fig. 4.
Embodiment three
Incorporated by reference to Fig. 3 to Fig. 6 refering to Fig. 7, the present invention also provides a kind of cleaning method of semiconductor production equipment, described half
The cleaning method of conductor production equipment includes the following steps:
1) semiconductor production equipment as described in embodiment two is provided;
2) after the completion of depositing operation, the reaction chamber 2 is cleaned using the cleaning system 3, to remove
State the deposit of remaining reaction gas and the reaction chamber inner wall in reaction chamber 2;Meanwhile it being purged using the gas and being
It is purged inside 13 pairs of isolating valves 1 of system, to remove the reaction product 8 fallen in the isolating valve 1 and cleaning life
At object 9.
Example IV
Incorporated by reference to fig. 4 to fig. 6 refering to Fig. 8, the present invention also provides a kind of semiconductor technology method, the semiconductor technology side
Method includes the following steps:
1) semiconductor production equipment as described in embodiment two is provided;
2) wafer is sent in the reaction chamber 2, the surface deposition film of Yu Suoshu wafer;
3) wafer is spread out of from the reaction chamber 2;
4) reaction chamber 2 is cleaned using the cleaning system 3, is remained with removing in the reaction chamber 2
2 inner wall of reaction gas and the reaction chamber deposit;Meanwhile using the gas purge system 13 to the isolating valve
It is purged inside 1, to remove the reaction product 8 fallen in the isolating valve 1 and cleaning product 9.
In conclusion the present invention provides a kind of isolating valve, semiconductor production equipment and its cleaning method, the isolating valve packet
Include: valve body, the valve body include opposite first end and second end;Be equipped in the valve body along its axially through through-hole, and
The diameter of the through-hole is gradually reduced from the valve body first end to the valve body second end;The top of the valve body is equipped with installation
Mouthful, the installing port is connected with the through-hole;Seal member, the seal member include taper type bellows and end cap;Institute
Stating taper type bellows includes opposite first end and second end, and the taper type bellows is suitable for the first end from the valve body
It is inserted into the through-hole, and the length of the taper type bellows is less than or equal to the length of the through-hole;The end cap is fixed
In the first end of the taper type bellows, and the lateral dimension of the end cap is greater than the maximum gauge of the through-hole;And gas
Purge system, the gas purge system include supply air line and an at least nozzle;The supply air line run through the end cap, one
End is connected with an air supply source, and the other end extends at the first end of the taper type bellows;The nozzle is located at the end
It covers close to the side of the taper type bellows, is connected with the supply air line, the nozzle to the taper type bellows
The distance at first end center is less than the maximum gauge of the through-hole, and is greater than the diameter of the taper type bellows first end.This
The isolating valve of invention sets bellows to the cone being adapted to the through-hole by setting taper type for the intracorporal through-hole of valve
Platform shape, so that being not easy to deposit in the isolating valve without dead angle, deposit and cleaning product in the isolating valve, and in pressure
Flow-disturbing will not be generated when variation;It, can by the gas purge system by the way that gas purge system is arranged in the isolating valve
With to being purged inside the isolating valve, can by the deposit deposited in the isolating valve and cleaning product from it is described every
From being cleared up away in valve;To avoid polluting product, the yield of product is improved, while isolating valve can be greatly reduced
Frequency of maintenance.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (11)
1. a kind of isolating valve, which is characterized in that the isolating valve includes:
Valve body, the valve body include opposite first end and second end;Be equipped in the valve body along its axially through through-hole, and
The diameter of the through-hole is gradually reduced from the valve body first end to the valve body second end;The top of the valve body is equipped with installation
Mouthful, the installing port is connected with the through-hole;
Seal member, the seal member include taper type bellows and end cap;The taper type bellows includes opposite
One end and second end, the taper type bellows is suitable for being inserted into the through-hole from the first end of the valve body, and the frustum
The length of shape bellows is less than or equal to the length of the through-hole;The end cap is fixed on the first of the taper type bellows
End, and the lateral dimension of the end cap is greater than the maximum gauge of the through-hole;And
Gas purge system, the gas purge system include supply air line and an at least nozzle;The supply air line runs through institute
End cap is stated, one end is connected with an air supply source, and the other end extends at the first end of the taper type bellows;The nozzle position
In the end cap close to the side of the taper type bellows, it is connected with the supply air line, the nozzle to the frustum
The distance at shape bellows first end center is less than the maximum gauge of the through-hole, and is greater than the taper type bellows first end
Diameter.
2. isolating valve according to claim 1, which is characterized in that the top sidewall of the through-hole and the body top
Angle is 8 °~25 °, and the angle of the bottom sidewall of the through-hole and the body base is 3 °~15 °.
3. isolating valve according to claim 1, which is characterized in that the distance of the installing port to the valve body first end is small
In the installing port to the distance of the valve body second end.
4. isolating valve according to claim 1, which is characterized in that the taper type bellows includes the first columnar part, the
Two columnar parts and taper type corrugated part;The taper type corrugated regions in first columnar part and second columnar part it
Between, and it is fixedly connected with first columnar part and second columnar part, the diameter of the taper type corrugated part is from described
One columnar part to second columnar part is gradually reduced;End face and institute of first columnar part far from the taper type corrugated part
End cap is stated to be fixedly connected.
5. isolating valve according to claim 1, which is characterized in that first columnar part, second columnar part and institute
Taper type corrugated part is stated to be an integral molding structure.
6. isolating valve according to claim 1, which is characterized in that
The supply air line includes main supply air line and at least two branch supply air lines, one end of the main supply air line with it is described
Air supply source is connected, and the other end is connected with the branch supply air line;
The quantity of the nozzle is identical as the quantity of the branch supply air line, each nozzle respectively with the corresponding branch
Supply air line is connected;The nozzle is in the end cap close to the end face of the taper type bellows in circumferentially distributed and all
Being oriented for the nozzle is clockwise or counterclockwise.
7. a kind of semiconductor production equipment, which is characterized in that the semiconductor production equipment includes
Reaction chamber, cleaning system, isolating valve, throttle valve and vacuum pump;The cleaning system and phase inside the reaction chamber
Connection, for being cleaned inside the reaction chamber;Installing port in the isolating valve via a gas piping with it is described
The inside of reaction chamber is connected, wherein the isolating valve includes:
Valve body, the valve body include opposite first end and second end;Be equipped in the valve body along its axially through through-hole, and
The diameter of the through-hole is gradually reduced from the valve body first end to the valve body second end;The top of the valve body is equipped with installation
Mouthful, the installing port is connected with the through-hole;
Seal member, the seal member include taper type bellows and end cap;The taper type bellows includes opposite
One end and second end, the taper type bellows is suitable for being inserted into the through-hole from the first end of the valve body, and the frustum
The length of shape bellows is less than or equal to the length of the through-hole;The end cap is fixed on the first of the taper type bellows
End, and the lateral dimension of the end cap is greater than the maximum gauge of the through-hole;And
Gas purge system, the gas purge system include supply air line and an at least nozzle;The supply air line runs through institute
End cap is stated, one end is connected with an air supply source, and the other end extends at the first end of the taper type bellows;The nozzle position
In the end cap close to the side of the taper type bellows, it is connected with the supply air line, the nozzle to the frustum
The distance at shape bellows first end center is less than the maximum gauge of the through-hole, and is greater than the taper type bellows first end
Diameter;
Also, the throttle valve is located at the second end of the valve body;The vacuum pump is via a gas piping and the throttle valve
And the isolating valve is connected.
8. semiconductor production equipment according to claim 7, which is characterized in that the gas purge system is nitrogen purging
System.
9. semiconductor production equipment according to claim 7 or 8, which is characterized in that the cleaning system be it is long-range equal from
Daughter system, the semiconductor production equipment include furnace tube device.
10. a kind of cleaning method of semiconductor production equipment, which is characterized in that the cleaning method packet of the semiconductor production equipment
Include following steps:
1) semiconductor production equipment as claimed in claim 7 is provided;
2) after the completion of depositing operation, the reaction chamber is cleaned using the cleaning system, to remove the reaction
The deposit of remaining reaction gas and the reaction chamber inner wall in chamber;Meanwhile using the gas purge system to institute
It states and is purged inside isolating valve, to remove the reaction product fallen in the isolating valve and cleaning product.
11. a kind of semiconductor technology method, which is characterized in that the semiconductor technology method includes the following steps:
1) semiconductor production equipment as claimed in claim 7 is provided;
2) wafer is sent in the reaction chamber, the surface deposition film of Yu Suoshu wafer;
3) wafer is spread out of from the reaction chamber;
4) reaction chamber is cleaned using the cleaning system, to remove remaining reaction gas in the reaction chamber
The deposit of body and the reaction chamber inner wall;Meanwhile using the gas purge system to being blown inside the isolating valve
It sweeps, to remove the reaction product fallen in the isolating valve and cleaning product.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710771566.8A CN109424761B (en) | 2017-08-31 | 2017-08-31 | Isolating valve, semiconductor production equipment and its cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710771566.8A CN109424761B (en) | 2017-08-31 | 2017-08-31 | Isolating valve, semiconductor production equipment and its cleaning method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109424761A true CN109424761A (en) | 2019-03-05 |
CN109424761B CN109424761B (en) | 2019-11-19 |
Family
ID=65505240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710771566.8A Active CN109424761B (en) | 2017-08-31 | 2017-08-31 | Isolating valve, semiconductor production equipment and its cleaning method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109424761B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08134649A (en) * | 1994-11-14 | 1996-05-28 | Fujitsu Ltd | Pressure control method and pressure controller of apparatus for producing semiconductor |
WO2010137553A1 (en) * | 2009-05-29 | 2010-12-02 | 三菱重工業株式会社 | Structure of substrate supporting table, and plasma processing apparatus |
CN102537373A (en) * | 2010-11-19 | 2012-07-04 | 李东民 | Valve for vacuum process |
CN104379978A (en) * | 2012-06-28 | 2015-02-25 | 美国圣戈班性能塑料公司 | Polymer bellows spring |
CN205244525U (en) * | 2015-11-19 | 2016-05-18 | 中国科学院等离子体物理研究所 | Vacuum air inlet adjusting valve |
CN106098591A (en) * | 2015-04-28 | 2016-11-09 | 株式会社日立国际电气 | Lining processor and the manufacture method of semiconductor device |
-
2017
- 2017-08-31 CN CN201710771566.8A patent/CN109424761B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08134649A (en) * | 1994-11-14 | 1996-05-28 | Fujitsu Ltd | Pressure control method and pressure controller of apparatus for producing semiconductor |
WO2010137553A1 (en) * | 2009-05-29 | 2010-12-02 | 三菱重工業株式会社 | Structure of substrate supporting table, and plasma processing apparatus |
CN102537373A (en) * | 2010-11-19 | 2012-07-04 | 李东民 | Valve for vacuum process |
CN104379978A (en) * | 2012-06-28 | 2015-02-25 | 美国圣戈班性能塑料公司 | Polymer bellows spring |
CN106098591A (en) * | 2015-04-28 | 2016-11-09 | 株式会社日立国际电气 | Lining processor and the manufacture method of semiconductor device |
CN205244525U (en) * | 2015-11-19 | 2016-05-18 | 中国科学院等离子体物理研究所 | Vacuum air inlet adjusting valve |
Also Published As
Publication number | Publication date |
---|---|
CN109424761B (en) | 2019-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9314824B2 (en) | Powder and deposition control in throttle valves | |
US20070087296A1 (en) | Gas supply device and apparatus for processing a substrate | |
US20070137572A1 (en) | Plasma processing apparatus | |
US11504727B2 (en) | Spray device and cleaning apparatus | |
KR20130083940A (en) | Tools and methods for processing microelectronic workpices using process chamber designs that easily transition between open and closed modes of operation | |
TW201402217A (en) | Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids | |
CN101145508B (en) | Plasma processing device and method | |
TWI485794B (en) | Substrate processing apparatus including heat-shield plate | |
CN101292059A (en) | Cleaning means for large area pecvd devices using a remote plasma source | |
CN201812803U (en) | Atmospheric transmission unit and wafer transmission system with the same | |
CN109424761B (en) | Isolating valve, semiconductor production equipment and its cleaning method | |
CN102938389A (en) | Depositing device | |
CN100388430C (en) | Substrate cleaning apparatus and method | |
CN1618682A (en) | Purgeable container for low vapor pressure chemicals | |
CN106816359B (en) | Wafer processing method | |
CN1473655A (en) | Cleanable manifold for low steam pressure chemical article container | |
CN102089848B (en) | Remote plasma cleaning method and apparatus for applying said method | |
TW201833378A (en) | Integration of dual remote plasmas sources for flowable cvd | |
CN114790542A (en) | Semiconductor device and cleaning system | |
CN101457350A (en) | Air-intake installation, low pressure chemical vapor deposition equipment and chemical vapor deposition method | |
CN220926925U (en) | CVD reaction chamber | |
CN208743270U (en) | Wafer susceptor and wafer processing device | |
KR102438781B1 (en) | Chamber cleansing apparatus and manufacturing apparatus for semiconductor device comprising thereof | |
CN116825713B (en) | Wafer conveying device with cleaning capability and cleaning method of multi-station deposition cavity | |
CN103628038A (en) | Chemical vapor deposition equipment, and method used for cleaning crawler belts in chemical vapor deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |