CN109417365B - 放大装置 - Google Patents
放大装置 Download PDFInfo
- Publication number
- CN109417365B CN109417365B CN201780039109.8A CN201780039109A CN109417365B CN 109417365 B CN109417365 B CN 109417365B CN 201780039109 A CN201780039109 A CN 201780039109A CN 109417365 B CN109417365 B CN 109417365B
- Authority
- CN
- China
- Prior art keywords
- amplifiers
- water
- cooling water
- input
- distributor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000498 cooling water Substances 0.000 claims abstract description 19
- 230000003321 amplification Effects 0.000 claims abstract description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 15
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 description 10
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/465—Power sensing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21118—An input signal dependant signal being measured by power measuring at the input of a power amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21136—An input signal of a power amplifier being on/off switched
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
本发明涉及一种放大装置。该放大装置具备:分配器,其将所输入的高频信号进行分配并输出;多个放大器(210),所述多个放大器(210)以构成大致圆筒形状的方式配置成环状,对由分配器输出的高频信号进行放大;多个水冷散热器(211),所述多个水冷散热器(211)以与多个放大器(210)分别对应的方式配置成环状,使得利用冷却水对多个放大器(210)进行冷却;以及合成器,其将由多个放大器(210)分别输出的高频信号进行合成并输出。
Description
技术领域
本发明涉及一种对RF信号进行放大的技术。
背景技术
公知一种使用固态功率放大器(SSPA:Solid State Power Amplifier)的放大装置,来代替利用作为RF信号(Radio Frequency:射频)的振荡放大元件的磁控振荡器实现的放大功能。根据这样的放大装置,能够由放大器单体实现的输出小,因此为了获得大的输出而需要利用合成器对将RF信号进行分配之后利用多个放大器进行放大所得到的信号进行合成,但是相比于磁控振荡器而言,具有寿命长且易于维护这样的优点。
另外,作为相关技术,公知一种电力放大装置,使电力分配器与电力合成器相向,在相向的电力分配器与电力合成器之间插入有多个放大器(参照专利文献1)。
专利文献1:日本特开平6-152278号公报
发明内容
发明要解决的问题
然而,根据以往的使用多个放大器的放大装置,为了将向合成器输入的RF信号彼此同样地进行放大,需要将多个放大器均匀地进行冷却。特别是在利用冷却水进行该冷却的情况下,存在由于冷却构造所占的比例变大而不易使放大装置小型化这样的问题。
本发明的实施方式是为了解决上述的问题而完成的,其目的在于提供一种能够通过更小的冷却构造对多个放大器进行冷却的放大装置。
用于解决问题的方案
为了解决上述的问题,本实施方式的放大装置具备:分配器,其将所输入的高频信号进行分配并输出;多个放大器,所述多个放大器以构成大致圆筒形状的方式配置成环状,对由所述分配器输出的高频信号进行放大;多个水冷散热器,所述多个水冷散热器以与所述多个放大器分别对应的方式配置成环状,使得利用冷却水对所述多个放大器进行冷却;以及合成器,其将从所述多个放大器分别输出的高频信号进行合成并输出。
发明的效果
根据本发明的实施方式,能够通过更小的冷却构造对多个放大器进行冷却。
附图说明
图1是表示本实施方式所涉及的放大装置的结构的概要立体图。
图2是表示内置单元的结构的概要立体图。
图3是表示中央模块的底面的概要仰视图。
图4是表示合成器的底面的概要仰视图。
图5是表示圆筒状模块的结构的概要俯视图。
图6是表示圆筒状模块的结构的概要侧视图。
图7是表示圆筒状模块中的冷却构造的概要侧视图。
图8是表示放大装置的硬件结构的框图。
具体实施方式
下面,参照附图来说明本发明的实施方式。
首先,说明本实施方式所涉及的放大装置及内置单元的概要。图1是表示本实施方式所涉及的放大装置的结构的概要立体图。图2是表示内置单元的结构的概要立体图。图3是表示中央模块的底面的概要仰视图。图4是表示合成器的底面的概要仰视图。
图1如所示,放大装置1具备壳体10、内置单元20以及中空波导管30,壳体10的内部与外部通过用于供给冷却水的供给管212a以及用于排出冷却水的排出管213a而以能够针对内置单元20供给和排出冷却水的方式连通。此外,在后面详细叙述冷却水的供给和排出。
如图2所示,内置单元20具备:圆筒状模块21,其构成为具有中空部的大致圆筒形;合成器22,其配置于圆筒状模块21的上部,与圆筒状模块21的上表面对应地构成为圆形;以及大致圆柱状的中央模块23,其被收容于圆筒状模块21的中空部。中空波导管30以其开口朝向侧方的方式设置在合成器22上。
中央模块23在上表面侧具备控制端子231和RF输入端子232,并且如图3所示那样在底面侧具备沿圆周方向等间隔地配置的16个RF输出端子233,该中央模块23将被输入到RF输入端子232的RF信号进行分配来从各个RF输出端子233分别输出到圆筒状模块21。
圆筒状模块21将从各个RF输出端子233分别输出的RF信号进行放大后输出到合成器22。此外,在后面详细叙述圆筒状模块21的构成要素。
如图4所示,合成器22在底面侧具备沿圆周方向等间隔地配置的16个RF输入端子222,将从圆筒状模块21输出且分别从各个RF输入端子222输入的RF信号进行合成后输出到中空波导管30。
接着,说明圆筒状模块的结构。图5是表示圆筒状模块的结构的概要俯视图。图6是表示圆筒状模块的结构的概要侧视图。图7是表示圆筒状模块中的冷却构造的概要侧视图。此外,为了便于说明,在图5中省略了供给管和排出管,在图6中省略了冷却水的路径的一部分。
如图5和图6所示,圆筒状模块21具备:16个放大器210,所述16个放大器210沿圆周方向配置成环状,且构成为彼此等同;16个水冷散热器211,所述16个水冷散热器211分别与各个放大器210对应地设置,且构成为彼此等同;以及形成为环状的管的供给圈212及排出圈213。
各个放大器210构成为长条的大致长方体,以其长边方向沿着圆筒状模块21的高度方向、且与长边方向正交的短边方向沿着圆筒状模块21的径向的方式设置。此外,放大器210的沿着径向的短边方向比圆筒状模块21的半径短,由此16个放大器210整体上构成环状,能够从圆筒状模块21的轴心起形成具有规定半径的圆柱状的中央空间。另外,各个放大器210分别具备RF输出端子210a和RF输入端子210b,其中,该RF输出端子210a设置于放大器210的上表面,用于向合成器22输出RF信号,该RF输入端子210b设置于放大器210的下表面,用于从中央模块23输入RF信号。各个RF输出端子210a与合成器22中的对应的RF输入端子222直接连接,各个RF输入端子210b经由线缆而与中央模块23中的对应的RF输出端子233连接。
各个水冷散热器211分别构成为在内部具有能够收容水的罐的大致长方体,被设置为与对应的放大器210的垂直于圆筒状模块21的圆周方向的两个侧面中的一个面接触。另外,各个水冷散热器211分别具备流入管211a和流出管211b,该流入管211a用于使冷却水从供给圈212向水冷散热器211流入,该流出管211b用于使冷却水从水冷散热器211向排出圈213流出。此外,如图5和图7所示,流入管211a的一端及流出管211b的一端都被连接于水冷散热器211的底部的开口。
供给圈212是形成为具有比由配置成环状的16个放大器210形成的圆筒的中空部的直径小的直径的环状的管,如图7所示,供给圈212与供给管212a的一端连接,并且与流入管211a的另一端连接。与流入管211a的另一端连接的开口与放大器210的配置同样地在圆周方向上彼此等间隔地设置。由此,能够使从供给管212a供给的冷却水在彼此相同的条件下流入到16个水冷散热器211。此外,在圆筒状模块21中收容有中央模块23的状态下,供给圈212在中空部内被设置于比中央模块23靠下方的位置。
排出圈213是形成为具有至少比供给圈212的直径大的直径的环状的管,如图7所示,排出圈213与排出管213a的一端连接,并且与流出管211b的另一端连接。与流出管211b的另一端连接的开口同放大器210的配置及供给圈212的开口位置同样地,在圆周方向上彼此等间隔地设置。由此,能够使冷却水在彼此相同的条件下从16个水冷散热器211流出,流出的冷却水经由排出管213a被排出到放大装置1的外部。此外,排出圈213被设置于比放大器210靠下方的位置。
根据这样的由供给圈、排出圈以及多个水冷散热器构成的冷却构造,能够降低冷却构造在中央空间所占的比例,并且能够对多个放大器同样地进行冷却,并且能够将中央模块配置于中央空间来使装置全体小型化。
接着,说明放大装置的硬件结构,具体地说,说明中央模块及放大器的硬件结构。图8是表示放大装置的硬件结构的框图。
如图8所示,中央模块23除了具备上述的控制端子231、RF输入端子232以及16个RF输出端子233以外,还具备输入电力监视部801、RF开关802、可变衰减器803、固定衰减器804、放大器805、分配器806以及16个调整部807。
输入电力监视部801判定从RF输入端子232输入的RF信号的电力是否适当,如果适当,则向RF开关802输出RF信号。RF开关802基于由控制端子231输入的控制信号而被设定为接通(ON)或断开(OFF),RF开关802只在被设定为接通的情况下向可变衰减器803输出RF信号。可变衰减器803是能够将衰减量以可变的方式进行调整的衰减器,基于由控制端子231输入的控制信号来使所输入的RF信号衰减后输出到固定衰减器804。固定衰减器804是衰减量固定的衰减器,使所输入的RF信号衰减后输出到放大器805。放大器805将所输入的RF信号进行放大后输出到分配器806。分配器806将所输入的RF信号进行分配来分别输出到16个调整部807。
各调整部807具有振幅相位调整部808和前级驱动放大器809,对从分配器806输出的RF信号的振幅和相位进行调整后将调整后的RF信号经由RF输出端子233输出到对应的放大器210。振幅相位调整部808例如由可变衰减器和移相器构成,对所输入的RF信号的振幅和相位进行调整后将调整后的RF信号输出到前级驱动放大器809。前级驱动放大器809将所输入的RF信号进行放大后输出到对应的放大器210。此外,各调整部807的针对振幅的调整量及针对相位的调整量能够被单独地进行调整,这些调整量例如在放大装置1出厂前被调整为从各调整部807输出的RF信号的振幅相等且相位相等。
各放大器210除了具有RF输出端子210a和RF输入端子210b以外,还具有作为半导体元件的驱动放大器901和终端放大器902。驱动放大器901将从RF输入端子210b输入的RF信号进行放大后输出到终端放大器902。终端放大器902将由驱动放大器901输出的RF信号进行放大后经由RF输出端子210a输出到合成器22。
从连接有RF输出端子210a的放大器210输入到合成器22中的16个RF输入端子222中的各个RF输入端子222的RF信号被合成器22进行合成后输出到中空波导管30。
如上述的那样,将多个放大器210配置成环状而构成为大致圆筒状,并设置用于使冷却水均匀地流入到各放大器210中的水冷散热器211,由此能够将各放大器210同样地进行冷却。另外,通过像这样构成,能够将与RF信号的放大有关的其它结构收容于由多个放大器210和多个水冷散热器211构成的圆筒的中空部分,能够确保均匀的冷却的可靠性,并且能够使放大装置1小型化。
本发明的实施方式是作为例子呈现的,并不意图对发明的范围进行限定。这些新的实施方式能够以其它各种方式来实施,在不脱离发明的主旨的范围内能够进行各种省略、替换、变更。这些实施方式或其变形包含在发明的范围、主旨中,并且包含在权利要求书所记载的发明及与其等同的范围内。
附图标记说明
1:放大装置;22:合成器;210:放大器;211:水冷散热器;806:分配器。
Claims (4)
1.一种放大装置,具备:
分配器,其将所输入的高频信号进行分配并输出;
多个放大器,所述多个放大器以构成圆筒形状的方式配置成环状,对由所述分配器输出的高频信号进行放大;
多个水冷散热器,所述多个水冷散热器以与所述多个放大器分别对应的方式配置成环状,使得利用冷却水对所述多个放大器进行冷却;以及
合成器,其将由所述多个放大器分别输出的高频信号进行合成并输出,
其中,所述放大装置还具备供给圈,该供给圈是供向所述多个水冷散热器供给的冷却水流入的形成为环状的管,
所述放大装置还具备排出圈,该排出圈是供从所述多个水冷散热器排出的冷却水流入的形成为环状的管,以及
所述多个水冷散热器分别具备流入管和流出管,所述流入管用于使冷却水从所述供给圈流入,所述流出管用于使冷却水向所述排出圈流出。
2.根据权利要求1所述的放大装置,其特征在于,
所述分配器被收容于所述圆筒形状的中空部。
3.根据权利要求1或2所述的放大装置,其特征在于,
所述多个放大器分别具有多个半导体放大器。
4.根据权利要求1或2的放大装置,其特征在于,
还具备:输入电力监视部,其判定向所述分配器输入的高频信号的电力是否适当;以及振幅相位调整部,其对从所述分配器输出的高频信号的振幅和相位进行调整,
所述输入电力监视部和所述振幅相位调整部被收容于所述圆筒形状的中空部。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016125239 | 2016-06-24 | ||
JP2016-125239 | 2016-06-24 | ||
PCT/JP2017/021823 WO2017221769A1 (ja) | 2016-06-24 | 2017-06-13 | 増幅装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109417365A CN109417365A (zh) | 2019-03-01 |
CN109417365B true CN109417365B (zh) | 2023-02-21 |
Family
ID=60783235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780039109.8A Active CN109417365B (zh) | 2016-06-24 | 2017-06-13 | 放大装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10714407B2 (zh) |
JP (1) | JP6713533B2 (zh) |
KR (1) | KR102403072B1 (zh) |
CN (1) | CN109417365B (zh) |
TW (1) | TWI710208B (zh) |
WO (1) | WO2017221769A1 (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128628A (en) * | 1990-12-26 | 1992-07-07 | Sgs-Thomson Microelectronics, Inc. | Solid state high power amplifier module |
JPH06237089A (ja) * | 1993-02-12 | 1994-08-23 | Asia Electron Inc | 電子機器の冷却装置 |
JP2010087227A (ja) * | 2008-09-30 | 2010-04-15 | Tokyo Electron Ltd | プラズマ処理装置 |
CN102668325A (zh) * | 2009-10-29 | 2012-09-12 | 日本电业工作株式会社 | 电力再生装置及电力再生方法、蓄电系统及蓄电方法、以及高频波装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208554A (en) * | 1992-01-24 | 1993-05-04 | Systron Donner Corporation | High power compact microwave amplifier |
US5218322A (en) * | 1992-04-07 | 1993-06-08 | Hughes Aircraft Company | Solid state microwave power amplifier module |
JPH06152278A (ja) * | 1992-11-10 | 1994-05-31 | Nippon Hoso Kyokai <Nhk> | 電力増幅装置 |
JPH06302982A (ja) | 1993-04-16 | 1994-10-28 | Asia Electron Inc | 電子機器の冷却装置 |
WO1998001964A1 (en) * | 1996-07-05 | 1998-01-15 | Clifford Harris | Modular transmission system and method |
US6359504B1 (en) * | 2000-01-28 | 2002-03-19 | Lucent Technologies Inc. | Power amplifier using upstream signal information |
US6639463B1 (en) * | 2000-08-24 | 2003-10-28 | Lucent Technologies Inc. | Adaptive power amplifier system and method |
KR100694834B1 (ko) * | 2005-06-01 | 2007-03-14 | 주식회사 영신알에프 | 다각 입체형 알에프 엠프 모듈 |
CN201904763U (zh) * | 2010-12-24 | 2011-07-20 | 北京北广科技股份有限公司 | 全固态大功率高频功率放大器 |
JP5822784B2 (ja) | 2012-05-10 | 2015-11-24 | 株式会社Nttドコモ | 電力増幅装置、電力増幅方法 |
CN103568166B (zh) * | 2013-11-01 | 2016-04-13 | 苏州泰科尼光伏材料有限公司 | 一种温控塑胶冷却辊 |
US9595930B2 (en) * | 2015-06-05 | 2017-03-14 | Mks Instruments, Inc. | Solid state microwave generator and power amplifier |
-
2017
- 2017-04-18 TW TW106112869A patent/TWI710208B/zh active
- 2017-06-13 JP JP2018523932A patent/JP6713533B2/ja active Active
- 2017-06-13 WO PCT/JP2017/021823 patent/WO2017221769A1/ja active Application Filing
- 2017-06-13 US US16/098,760 patent/US10714407B2/en active Active
- 2017-06-13 CN CN201780039109.8A patent/CN109417365B/zh active Active
- 2017-06-13 KR KR1020187033054A patent/KR102403072B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128628A (en) * | 1990-12-26 | 1992-07-07 | Sgs-Thomson Microelectronics, Inc. | Solid state high power amplifier module |
JPH06237089A (ja) * | 1993-02-12 | 1994-08-23 | Asia Electron Inc | 電子機器の冷却装置 |
JP2010087227A (ja) * | 2008-09-30 | 2010-04-15 | Tokyo Electron Ltd | プラズマ処理装置 |
CN102668325A (zh) * | 2009-10-29 | 2012-09-12 | 日本电业工作株式会社 | 电力再生装置及电力再生方法、蓄电系统及蓄电方法、以及高频波装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI710208B (zh) | 2020-11-11 |
KR102403072B1 (ko) | 2022-05-27 |
JPWO2017221769A1 (ja) | 2019-04-11 |
CN109417365A (zh) | 2019-03-01 |
US20190122957A1 (en) | 2019-04-25 |
US10714407B2 (en) | 2020-07-14 |
WO2017221769A1 (ja) | 2017-12-28 |
TW201801468A (zh) | 2018-01-01 |
JP6713533B2 (ja) | 2020-06-24 |
KR20190020652A (ko) | 2019-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9276527B2 (en) | Methods and devices for impedance matching in power amplifier circuits | |
KR102469576B1 (ko) | 플라즈마 처리 장치 | |
US10848105B2 (en) | Power amplification module | |
US9331643B2 (en) | Methods and devices for thermal control in power amplifier circuits | |
US20170163217A1 (en) | Simultaneous Linearization Of Multiple Power Amplifiers With Independent Power | |
US8963632B2 (en) | High-frequency power amplifier with doherty extension | |
US10651804B2 (en) | Power amplifier circuit | |
JP2015019275A (ja) | 増幅装置、送信装置 | |
CN109417365B (zh) | 放大装置 | |
US7884669B2 (en) | Broadband amplifying device | |
US9667197B2 (en) | Signal amplification system | |
JP2009260472A (ja) | 電力増幅器 | |
EP2930783B1 (en) | Systems and methods for using power dividers for improved ferrite circulator rf power handling | |
US7616932B2 (en) | Multi-channel amplifier with reduced overall power emission, and circuit management including same | |
JP2014086946A (ja) | Rfフロントエンドモジュール | |
US9985668B2 (en) | Relay apparatus, relay system, and relay method | |
US11201596B2 (en) | Power amplifier system | |
US20150256128A1 (en) | Multi-port amplifier and method for controlling thereof | |
KR101283850B1 (ko) | 전력 발진기 | |
US10840859B2 (en) | Amplification apparatus | |
JP2017005618A (ja) | 電力合成増幅装置 | |
EP3131199A1 (en) | N-way load modulation amplifier | |
JPH08256018A (ja) | 高周波直線増幅器の消費電力制御回路 | |
KR20060103675A (ko) | 다이버시티를 위한 전력 증폭 장치 | |
JP2007209004A (ja) | 通信用電力増幅器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |