TWI710208B - 增幅裝置 - Google Patents
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- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
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- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21136—An input signal of a power amplifier being on/off switched
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Abstract
本發明所要解決的問題在於提供一種增幅裝置,其能夠藉由更小的冷卻機構來冷卻複數個增幅器。為了解決此問題,本發明的增幅裝置,具備:分配器,其分配被輸入的高頻訊號並輸出;複數個增幅器210,其以構成約略圓筒形狀的方式被配置成環狀,並將從分配器輸出的高頻訊號進行增幅;複數個水冷散熱器211,其以冷卻水來冷卻複數個增幅器210的方式,各自地對應於複數個增幅器210的各個並被配置成環狀;及,合成器,其將從複數個增幅器210各自輸出的高頻訊號進行合成並輸出。
Description
本發明關於將射頻(RF)訊號進行增幅的技術。
已知一種增幅裝置,其使用固體化電力增幅器(SSPA:Solid State Power Amplifier)來取代由磁控管振盪器(magnetron oscillator)所產生的增幅機能,以作為RF(射頻,Radio Frequency)訊號的振盪增幅元件(amplifying element for oscillation)。依據這種增幅裝置,因為增幅器單體所能夠實現的輸出小,所以為了得到大的輸出而必須在分配RF訊號後藉由合成器來合成由複數個增幅器所增幅的訊號,但是相較於磁控管振盪器,卻具有使用壽命長且容易維護的優點。
又,作為關聯技術,已知一種電力增幅裝置,其使電力分配器和電力合成器對向,並在對向的電力分配器與電力合成器之間插入複數個增幅器(參照專利文獻1)。
[先前技術文獻] (專利文獻) 專利文獻1:日本特開平6-152278號公報
[發明所欲解決的問題] 然而,依據先前的使用複數個增幅器之增幅裝置,必須平均地冷卻複數個增幅器,該複數個增幅器用以彼此同樣地將要向合成器輸入的RF訊號進行增幅。特別是當藉由冷卻水來實行此冷卻時,冷卻構造佔據的比率變大而會有增幅裝置難以小型化的問題。
本發明的實施形態,是用以解決上述問題點而完成,本發明的目的是提供一種增幅裝置,其能夠藉由更小的冷卻機構來冷卻複數個增幅器。
[解決問題的技術手段] 為了解決上述問題,本實施形態的增幅裝置,具備:分配器,其分配被輸入的高頻訊號並輸出;複數個增幅器,其以構成約略圓筒形狀的方式被配置成環狀,並將從前述分配器輸出的高頻訊號進行增幅;複數個水冷散熱器(heat sink),其以冷卻水來冷卻前述複數個增幅器的方式,各自地對應於該複數個增幅器的各個並被配置成環狀;及,合成器,其將從前述複數個增幅器各自輸出的高頻訊號進行合成並輸出。
[發明的效果] 依據本發明的實施形態,能夠藉由更小的冷卻機構來冷卻複數個增幅器。
以下,一邊參照圖式一邊說明本發明的實施形態。
首先,針對關於本實施形態的增幅裝置和內建單元的概略進行說明。第1圖是繪示關於本實施形態的增幅裝置的構成之概略立體圖。第2圖是繪示內建單元的構成之概略立體圖。第3圖是繪示中央模組的底面之概略底面圖。第4圖是繪示合成器的底面之概略底面圖。
如第1圖所示,增幅裝置1,具備框體10、內建單元20及中空導波管30,藉由供給冷卻水之供給管212a及排出冷卻水之排出管213a來連通框體10的內部和外部,使得冷卻水相對於內建單元20可以供給和排出。另外,針對冷卻水的供給和排出,詳述於後。
如第2圖所示,內建單元20,具備:圓筒狀模組21,其具有中空部且被構成約略圓筒形;合成器22,其被配置於圓筒狀模組21的上部,並對應於圓筒狀模組21的頂面而被構成圓形;及,約略圓柱狀的中央模組23,其被收納在圓筒狀模組21的中空部。中空導波管30,其開口朝向側面方向且被設置在合成器22上。
中央模組23,在頂面側具備控制端子231和RF輸入端子232,並且如第3圖所示,在底面側以沿著圓周方向且配置成等間隔的方式具備16個RF輸出端子233,該中央模組23,其分配被輸入至RF輸入端子232中的RF訊號並從各個RF輸出端子233輸出至圓筒狀模組21。
圓筒狀模組21,其將從各個RF輸出端子233輸出的RF訊號進行增幅並向合成器22輸出。另外,關於圓筒狀模組21的構成要素,詳述於後。
如第4圖所示,合成器22,以在底面側沿著圓周方向等間隔配置的方式具備16個RF輸入端子222,並將由圓筒狀模組21輸出並被輸入至各個RF輸入端子222的RF訊號進行合成並向中空導波管30輸出。
接著,針對圓筒狀模組的構成進行說明。第5圖是繪示圓筒狀模組的構成之概略平面圖。第6圖是繪示圓筒狀模組的構成之概略側面圖。第7圖是繪示在圓筒狀模組中的冷卻構造之概略側面圖。另外,在說明上,於第5圖中省略供給管合排出管,於第6圖中省略冷卻水的經過路徑的一部分。
如第5圖和第6圖所示,圓筒狀模組21,具備:16個增幅器210,其沿著圓周方向被配置成環狀且具有彼此相同的構成;16個水冷散熱器211,其各自地對應於增幅器210而設置且具有彼此相同的構成;及,供給緣邊(rim)212和排出緣邊213,其被形成環狀的管子。
各個增幅器210,被構成長條狀的約略長方體,以其長度方向朝向圓筒狀模組21的高度方向且其與長度方向正交的寬度方向朝向圓筒狀模組21的徑向的方式設置。另外,朝向徑向的增幅器210的寬度方向,設為比圓筒狀模組21的半徑更短,藉此16個增幅器210的整體構成環狀,且能夠形成從圓筒狀模組21的軸心起算具有規定半徑的圓柱狀的中央空間。又,各個增幅器210,具備:RF輸出端子210a,其被設置在該增幅器210的頂面且向合成器22輸出RF訊號;及,RF輸入端子210b,其被設置在該增幅器210的底面且將RF訊號從中央模組23輸入。各個RF輸出端子210a,直接地被連接至在合成器22中的對應的RF輸入端子222;各個RF輸入端子210b,經由纜線而被連接至在中央模組23中的對應的RF輸出端子233。
各個水冷散熱器211,被構成約略長方體且在內部具有可收容水的槽體,並且以接觸在對應的增幅器210中的垂直於圓筒狀模組21的圓周方向的2個側面當中的一方的側面的方式設置。又,各個水冷散熱器211,具備:流入管211a,其使冷卻水從供給緣邊212流入水冷散熱器211中;及,流出管211b,其使冷卻水從水冷散熱器211向排出緣邊213流出。另外,如第5圖和第7圖所示,流入管211a的一端及流出管211b的一端的任一個都被連接至水冷散熱器211的底部的開口。
供給緣邊212,是被形成環狀的管子,該環狀的管子具有的直徑比被配置成環狀的16個增幅器210所形成的圓筒的中空部的直徑更小,如第7圖所示,供給緣邊212被連接至供給管212a的一端並且被連接至流入管211a的另一端。與流入管211a的另一端連接的開口,與增幅器210的配置同樣地被設置成在圓周方向彼此等間隔。藉此,由供給管212a供給的冷卻水,相對於16個水冷散熱器211能夠以彼此同樣的條件流入。另外,在中央模組23被收容在圓筒狀模組21中的狀態下,供給緣邊212被設置在中空部內的比中央模組23更下方的位置。
排出緣邊213,是被形成環狀的管子,該環狀的管子具有的直徑至少比供給緣邊212的直徑更大,如第7圖所示,排出緣邊213被連接至排出管213a的一端並且被連接至流出管211b的另一端。與流出管211b的另一端連接的開口,與增幅器210的配置及供給緣邊212的開口位置同樣地被設置成在圓周方向彼此等間隔。藉此,冷卻水從16個水冷散熱器211能夠以彼此同樣的條件流出,且流出的冷卻水經由排出管213a向增幅裝置1的外部排出。另外,排出緣邊213被設置在比增幅器210更下方的位置。
這樣,依據由複數個水冷散熱器211、供給緣邊、排出緣邊所構成的冷卻構造,能夠減少冷卻構造佔據中央空間的比率,並同樣地冷卻複數個增幅器,進一步能夠將中央模組配置在中央空間而使得裝置整體小型化。
接著,針對增幅裝置的硬體構成進行說明,具體來說是針對中央模組和增幅器的硬體構成進行說明。第8圖是繪示增幅裝置的硬體構成之方塊圖。
如第8圖所示,中央模組23,除了上述控制端子231、RF輸入端子232及16個RF輸出端子233之外,還具備:輸入電力監視部801、RF開關802、可變衰減器803、固定衰減器804、放大器805、分配器806、及16個調整部807。
輸入電力監視部801,其判定從RF輸入端子232輸入的RF訊號的電力是否適當,如果適當則將RF訊號向RF開關802輸出。RF開關802,基於從RF輸入端子232輸入的控制訊號而被設定成ON(開啟)或OFF(關閉),僅當被設定成ON時將RF訊號向可變衰減器803輸出。可變衰減器803是可調整衰減量之衰減器,其基於從控制端子231輸入的控制訊號來使被輸入的RF訊號衰減並向固定衰減器804輸出。固定衰減器804是衰減量固定之衰減器,其使被輸入的RF訊號衰減並向放大器805輸出。放大器805,其將被輸入的RF訊號進行增幅並向分配器806輸出。分配器806,其分配被輸入的RF訊號並輸出至16個調整器807各自之中。
各調整器807,具有振幅相位調整部808和預驅動放大器809,以調整從分配器806輸出的RF訊號的振幅和相位並經由RF輸出端子233向對應的增幅器210輸出。振幅相位調整部808,例如是由可變衰減器和相移器所構成,其調整被輸入的RF訊號的振幅和相位並向預驅動放大器809輸出。預驅動放大器809,其將被輸入的RF訊號進行增幅並向對應的增幅器210輸出。另外,各調整器807所實行的振幅的調整量和相位的調整量,可各自地調整,這些調整量,例如在增幅裝置1的出貨前,以使從各調整器807輸出的RF訊號的振幅和相位彼此相同的方式來調整。
各增幅器210,除了RF輸出端子210a和RF輸入端子210b之外,還具有半導體元件也就是驅動放大器901和末級放大器902。驅動放大器901,其將從RF輸入端子210b輸入的RF訊號進行增幅並向末級放大器902輸出。末級放大器902,其將從驅動放大器901輸出的RF訊號進行增幅並經由RF輸出端子210a向合成器22輸出。
從增幅器210輸入的RF訊號,藉由合成器22而被合成並向中空導波管30輸出,該增幅器210的RF輸出端子210a分別地連接至在合成器22中的16個RF輸入端子222。
如上述,將複數個增幅器210以構成約略圓筒狀的方式被配置成環狀,且將水冷散熱器211設置成相對於各增幅器210使冷卻水均等地流入,藉此能夠同樣地冷卻各增幅器210。又,藉由這種構成,能夠將與RF訊號的增幅關聯的其他構成,收容在由複數個增幅器210和複數個水冷散熱器211所構成的圓筒的中空部分中,而能夠保持藉由均等的冷卻所達成的信賴性,並使增幅裝置1小型化。
本發明的實施形態是提示的例子,並非用以限定發明的範圍。這些新穎的實施形態,能以其他各種形態來實施,只要在不超過發明的要點的範圍內,可以實行各種省略、置換、變更。這些實施形態及其變化,接包含在發明的範圍和要點中,並且包含在專利申請範圍中記載的發明和其均等的範圍中。
1‧‧‧增幅裝置10‧‧‧框體20‧‧‧內建單元21‧‧‧圓筒狀模組22‧‧‧合成器23‧‧‧中央模組30‧‧‧中空導波管210‧‧‧增幅器210a、233‧‧‧RF輸出端子210b、222、232‧‧‧RF輸入端子211‧‧‧水冷散熱器211a‧‧‧流入管211b‧‧‧流出管212‧‧‧供給緣邊212a‧‧‧供給管213‧‧‧排出緣邊213a‧‧‧排出管231‧‧‧控制端子801‧‧‧輸入電力監視部802‧‧‧RF開關803‧‧‧可變衰減器804‧‧‧固定衰減器805‧‧‧放大器806‧‧‧分配器807‧‧‧調整部808‧‧‧振幅相位調整部809‧‧‧預驅動放大器901‧‧‧驅動放大器902‧‧‧末級放大器
第1圖是繪示關於本實施形態的增幅裝置的構成之概略立體圖。 第2圖是繪示內建單元的構成之概略立體圖。 第3圖是繪示中央模組的底面之概略底面圖。 第4圖是繪示合成器的底面之概略底面圖。 第5圖是繪示圓筒狀模組的構成之概略平面圖。 第6圖是繪示圓筒狀模組的構成之概略側面圖。 第7圖是繪示在圓筒狀模組中的冷卻構造之概略側面圖。 第8圖是繪示增幅裝置的硬體構成之方塊圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
21‧‧‧圓筒狀模組
210‧‧‧增幅器
210a‧‧‧RF輸出端子
210b‧‧‧RF輸入端子
211‧‧‧水冷散熱器
211a‧‧‧流入管
211b‧‧‧流出管
212‧‧‧供給緣邊
213‧‧‧排出緣邊
Claims (5)
- 一種增幅裝置,具備:分配器,其分配被輸入的高頻訊號並輸出;複數個增幅器,其以構成約略圓筒形狀的方式被配置成環狀,並將從前述分配器輸出的高頻訊號進行增幅;複數個水冷散熱器,其以冷卻水來冷卻前述複數個增幅器的方式,各自地對應於該複數個增幅器的各個並被配置成環狀;及,合成器,其將從前述複數個增幅器各自輸出的高頻訊號進行合成並輸出;其中,進一步具備:輸入電力監視部,其判定要被輸入至前述分配器中的高頻訊號的電力是否適當;及,振幅相位調整部,其調整從前述分配器輸出的高頻訊號的振幅相位;並且,前述輸入電力監視部和前述振幅相位調整部,被收容在前述約略圓筒形狀的中空部中。
- 如請求項1所述的增幅裝置,其中,進一步具備供給輪緣,該供給輪緣是被形成環狀的管子且流入要供給至前述複數個水冷散熱器中的冷卻水。
- 如請求項1或2所述的增幅裝置,其中,進一步具備排出輪緣,該排出輪緣是被形成環狀的管子且流入從前述複數個水冷散熱器排出的冷卻水。
- 如請求項1或2所述的增幅裝置,其中,前述分配器被收容在前述約略圓筒形狀的中空部中。
- 如請求項1或2所述之增幅裝置,其中,前述複數個增幅器,各自具有複數個半導體放大器。
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