CN109412441A - The MMC control method of T-type three-level topology based on reverse blocking IGBT - Google Patents
The MMC control method of T-type three-level topology based on reverse blocking IGBT Download PDFInfo
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- CN109412441A CN109412441A CN201811168432.8A CN201811168432A CN109412441A CN 109412441 A CN109412441 A CN 109412441A CN 201811168432 A CN201811168432 A CN 201811168432A CN 109412441 A CN109412441 A CN 109412441A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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Abstract
The MMC control method for the T-type three-level topology based on reverse blocking IGBT that the embodiment of the invention provides a kind of, wherein, the submodule of MMC is the T-type three-level topology structure based on reverse blocking IGBT, the control method includes: to generate the PWM driving pulse of each switching tube in the submodule of MMC according to the first triangular carrier and sinusoidal modulation wave；The PWM driving pulse of each switching tube in the submodule of MMC is split, the PWM driving pulse of each switching tube after being divided；The PWM driving pulse of each switching tube after segmentation is inputted in the submodule of each MMC, when PWM driving pulse is high level, the conducting of control switch pipe, when PWM driving pulse is low level, the shutdown of control switch pipe.The control method provided through the embodiment of the present invention improves the equivalent switching frequency of output voltage, improves the waveform of output voltage, and the sine degree of obtained output voltage is good, and harmonic content is low.
Description
Technical field
The present invention relates to power electronics fields, and in particular to a kind of T-type three-level topology based on reverse blocking IGBT
MMC control method.
Background technique
Modularization multi-level converter (MMC) topology uses modularization cascaded design, and each submodule is considered as independence
DC power supply, using low-voltage-grade semiconductor devices realize high-voltage large-capacity power conversion, can be effectively reduced out
The switching frequency of device is closed, switching loss is reduced, and the T-type three-level topology based on RB-IGBT (reverse blocking IGBT) is suitable for
The occasion of low switching frequency, low-voltage high-capacity.If the T-type three-level topology based on RB-IGBT is applied in MMC topology, make
For power modules, the characteristics of the two, is combined, the advantage of the two will can be given full play to, achieve the effect that complementation.
However, it is less to the research of the MMC control of the T-type three-level topology based on RB-IGBT at present, for existing MMC
The control method of topology generallys use phase-shifted SPWM technology, and the sine degree of output voltage is bad, and harmonic content is higher.It is based on
How this, provide that a kind of sine degree for making output voltage is good and harmonic content is low to three electricity of T-type based on reverse blocking IGBT
The control method for putting down the MMC of topology, becomes urgent problem to be solved.
Summary of the invention
In view of above-mentioned analysis, the embodiment of the present invention proposes a kind of T-type three-level topology based on reverse blocking IGBT
MMC control method, the sine degree to solve the existing control method output voltage for MMC topology is bad and harmonic content is high
The problem of.
To achieve the above object, the present invention adopts the following technical scheme:
According in a first aspect, the embodiment of the invention provides a kind of T-type three-level topology based on reverse blocking IGBT MMC
Control method, the submodule of the MMC are the T-type three-level topology structure based on reverse blocking IGBT；The control method includes:
According to the first triangular carrier and sinusoidal modulation wave, the PWM driving pulse of each switching tube in the submodule of the MMC is generated；To institute
The PWM driving pulse for stating each switching tube in the submodule of MMC is split, and the PWM of each switching tube after being divided drives
Moving pulse；The PWM driving pulse of each switching tube after the segmentation is inputted in the submodule of each MMC, when described
When PWM driving pulse is high level, the switching tube conducting is controlled, when the PWM driving pulse is low level, described in control
Switching tube shutdown.
With reference to first aspect, raw according to the first triangular carrier and sinusoidal modulation wave in first aspect first embodiment
The PWM driving pulse of each switching tube in submodule at the MMC, comprising: according to first triangular carrier, generate each described
The criterion carrier wave of the submodule of MMC；According to the criterion carrier wave and the sinusoidal modulation wave, in the submodule for generating the MMC
The PWM driving pulse of each switching tube.
First embodiment with reference to first aspect carries in first aspect second embodiment according to first triangle
Wave generates the criterion carrier wave of the submodule of each MMC, comprising: raw by the first predetermined angle of the first triangular carrier phase shift
At the second triangular carrier of multiple groups of the first predetermined angle described in phase phase difference, the criterion carrier wave of the submodule as each MMC,
The group number of second triangular carrier is identical as the number of the submodule of the MMC.
First embodiment or first aspect second embodiment with reference to first aspect, in first aspect third embodiment
In, according to the criterion carrier wave and the sinusoidal modulation wave, generate the PWM driving arteries and veins of each switching tube in the submodule of the MMC
Punching, comprising: according to frequency, amplitude and the phase of the criterion carrier wave, generate the third triangular carrier of the submodule of each MMC
With the 4th triangular carrier, the frequency and amplitude of the third triangular carrier and the 4th triangular carrier and the frequency of the criterion carrier wave
All the same with amplitude, the phase of the third triangular carrier is identical as the phase of the criterion carrier wave, the 4th triangular carrier
Phase and the criterion carrier wave opposite in phase；By the third triangular carrier and the 4th triangular carrier respectively with the sine
Modulating wave is compared, and generates the PWM driving pulse of each switching tube in the submodule of the MMC.
Third embodiment with reference to first aspect, in the 4th embodiment of first aspect, the submodule of the MMC is base
In the T-type tri-level half-bridge structure of reverse blocking IGBT, comprising: the first switch tube and second switch being serially connected, described
One end of one switching tube connects the first input end of the submodule, and the other end passes through the first capacitor being serially connected and the second electricity
Hold the second input terminal for connecting the submodule, the both ends of the second switch are separately connected the first input end and second
One end of input terminal, the reverse blocking IGBT connects the first input end, and the other end is connected to the first capacitor and second
Among capacitor, the reverse blocking IGBT includes third switching tube and the 4th switching tube；By the third triangular carrier and the four or three
Angle carrier wave is compared with the sinusoidal modulation wave respectively, generates the PWM driving arteries and veins of each switching tube in the submodule of the MMC
Punching, comprising: the third triangular carrier and the 4th triangular carrier are compared with the sinusoidal modulation wave respectively, obtained described
First PWM driving pulse of first switch tube and the second PWM driving pulse of second switch；It is driven according to the first PWM
Pulse and the second PWM driving pulse, obtain the third switching tube third PWM driving pulse and the 4th switching tube
Four PWM driving pulses, the third PWM driving pulse and the first PWM driving pulse reverse phase, the 4th PWM drive arteries and veins
Punching and the second PWM driving pulse reverse phase.
With reference to first aspect or first aspect any one embodiment uses in the 5th embodiment of first aspect
Pulsqe distributor is split the PWM driving pulse of each switching tube in the submodule of the MMC, each described after being divided
The PWM driving pulse of switching tube.
Technical solution of the present invention at least has the advantages that compared with prior art
The MMC control method for the T-type three-level topology based on reverse blocking IGBT that the embodiment of the invention provides a kind of, MMC
Submodule be the T-type three-level topology structure based on reverse blocking IGBT, which passes through in the MMC submodule to generation
The PWM driving pulse of each switching tube is split, and the PWM driving pulse of each switching tube after segmentation is inputted to the submodule of each MMC
In block, when PWM driving pulse is high level, the conducting of control switch pipe, when PWM driving pulse is low level, control switch
Pipe shutdown, to improve the equivalent switching frequency of output voltage, improves the waveform of output voltage, obtained output voltage
Sine degree is good, and harmonic content is low.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a tool of the MMC control method of the T-type three-level topology based on reverse blocking IGBT in the embodiment of the present invention
The exemplary flow chart of body；
Fig. 2 is the schematic diagram of a specific example of single-phase MMC topology in the embodiment of the present invention；
Fig. 3 is a specific example of the T-type tri-level half-bridge submodule based on reverse blocking IGBT in the embodiment of the present invention
Topological structure schematic diagram；
Fig. 4 is the step S1 of the MMC control method of the T-type three-level topology based on reverse blocking IGBT in the embodiment of the present invention
A specific example flow chart；
Fig. 5 is the wave of the criterion carrier wave of the MMC submodule obtained in the embodiment of the present invention using phase-shifted SPWM method
Shape figure；
The step of Fig. 6 is the MMC control method of the T-type three-level topology based on reverse blocking IGBT in the embodiment of the present invention
The flow chart of a specific example of S12；
Fig. 7 is two groups of triangular carriers of the MMC submodule obtained in the embodiment of the present invention using carrier wave reverse phase SPWM method
Waveform diagram；
Fig. 8 is that two groups of triangular carriers and sine wave adjustment generate four switching tubes of MMC submodule in the embodiment of the present invention
The schematic diagram of PWM driving pulse；
Fig. 9 is the output of MMC submodule when using the PWM driving pulse of undivided each switching tube in the embodiment of the present invention
Waveform；
MMC submodule is defeated when Figure 10 is the PWM driving pulse in the embodiment of the present invention using each switching tube after segmentation
Waveform out；
Figure 11 is the single-phase MMC topology of the T-type tri-level half-bridge submodule based on reverse blocking IGBT in the embodiment of the present invention
Simulation model schematic diagram；
Figure 12 is that the simulation model of T-type tri-level half-bridge submodule based on reverse blocking IGBT in the embodiment of the present invention shows
It is intended to；
Figure 13 is the single-phase MMC topology of the T-type tri-level half-bridge submodule based on reverse blocking IGBT in the embodiment of the present invention
Simulation model output voltage and output electric current waveform diagram；
Figure 14 is defeated to the simulation model of the single-phase MMC topology of the T-type tri-level half-bridge submodule based on reverse blocking IGBT
Voltage carries out the result of fft analysis out；
Figure 15 is defeated to the simulation model of the single-phase MMC topology of the T-type tri-level half-bridge submodule based on reverse blocking IGBT
Electric current carries out the result of fft analysis out；
Figure 16 is the schematic diagram of the simulation model of conventional half-bridge submodule；
Figure 17 is the signal of the output voltage and output current wave of the simulation model of single-phase five level half-bridges MMC circuit
Figure；
Figure 18 is the result that fft analysis is carried out to the simulation model output voltage of single-phase five level half-bridges MMC circuit；
Figure 19 is to export the result that electric current carries out fft analysis to the simulation model of single-phase five level half-bridges MMC circuit.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " first ", " second ", " third " etc. are only used for description mesh
, it is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " connected " " connects
Connect " it shall be understood in a broad sense, for example, it may be being fixedly connected, it may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, can also can also be two indirectly connected through an intermediary
Connection inside element can be wireless connection, be also possible to wired connection.For the ordinary skill in the art,
The concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
The MMC control method for the T-type three-level topology based on reverse blocking IGBT that the embodiment of the invention provides a kind of,
In, the submodule of MMC is the T-type three-level topology structure based on reverse blocking IGBT, as shown in Figure 1, the control method includes:
Step S1: according to the first triangular carrier and sinusoidal modulation wave, the PWM for generating each switching tube in the submodule of MMC is driven
Moving pulse；
Step S2: the PWM driving pulse of each switching tube in the submodule of MMC is split, respectively opening after being divided
Close the PWM driving pulse of pipe；
Step S3: the PWM driving pulse of each switching tube after segmentation is inputted in the submodule of each MMC, when PWM drives arteries and veins
When punching is high level, the conducting of control switch pipe, when PWM driving pulse is low level, the shutdown of control switch pipe.
The MMC control method of T-type three-level topology provided in an embodiment of the present invention based on reverse blocking IGBT, wherein MMC
Submodule be the T-type three-level topology structure based on reverse blocking IGBT, which passes through in the MMC submodule to generation
The PWM driving pulse of each switching tube is split, and the PWM driving pulse of each switching tube after segmentation is inputted to the submodule of each MMC
In block, when PWM driving pulse is high level, the conducting of control switch pipe, when PWM driving pulse is low level, control switch
Pipe shutdown, to improve the equivalent switching frequency of output voltage, improves the waveform of output voltage, obtained output voltage
Sine degree is good, and harmonic content is low.
It is below the T-type tri-level half-bridge structure based on reverse blocking IGBT and every phase submodule number with submodule is 8
For single-phase MMC topology, to the MMC controlling party of the T-type three-level topology provided in an embodiment of the present invention based on reverse blocking IGBT
Method is described in detail.
Fig. 2 show the schematic diagram of single-phase MMC topology, as shown in Fig. 2, the MMC topology is divided into bridge arm and lower bridge arm two
Part is composed in series by 8 submodules with bridge arm inductance, and 8 submodules include upper bridge arm 4 (corresponding to bridge arm upper in Fig. 2
SM1~SM4) and 4 (SM corresponding to lower bridge arm in Fig. 2 of lower bridge arm1~SM4)。
Fig. 3 show the topological structure of the T-type tri-level half-bridge submodule based on reverse blocking IGBT, as shown in figure 3, this is opened up
Flutterring structure includes: the first switch tube S being serially connected1With second switch S2, first switch tube S1One end connection submodule
First input end A, the other end pass through the second input terminal of the first capacitor C1 and the second capacitor C2 connection submodule that are serially connected
B, second switch S2Both ends be separately connected the first input end A and the second input terminal B of submodule, one end of reverse blocking IGBT
The first input end A of submodule is connected, the other end is connected to first capacitor C1With the second capacitor C2Centre, reverse blocking IGBT include
Third switching tube S3With the 4th switching tube S4.The T-type tri-level half-bridge submodule be on the basis of existing MMC half-bridge submodule,
Utilize third switching tube S3With the 4th switching tube S4Two-way switch is formed, increases a clamper branch to realize the output of three level；
It also, include for single capacitor relative to existing MMC half-bridge submodule, which includes two electricity
Hold, respectively above-mentioned first capacitor C1With the second capacitor C2, and first capacitor C1With the second capacitor C2Ratio be 1:2.
As shown in figure 4, the MMC controlling party of the T-type three-level topology provided in an embodiment of the present invention based on reverse blocking IGBT
The step S1 of method generates the PWM driving arteries and veins of each switching tube in the submodule of MMC according to the first triangular carrier and sinusoidal modulation wave
Punching, specifically includes:
Step S11: according to the first triangular carrier, the criterion carrier wave of the submodule of each MMC is generated；
Specifically, as shown in figure 5, using phase-shifted SPWM method, by the first triangular carrier phase shift π/4,8 groups are generated
Criterion carrier wave C1~C8 of MMC submodule, the amplitude of 8 groups of criterion carrier waves is equal and phase by pi/4 of neighbourhood criterion carrier wave.
Step S12: according to criterion carrier wave and sinusoidal modulation wave, the PWM driving arteries and veins of each switching tube in the submodule of MMC is generated
Punching, as shown in fig. 6, specifically including:
Step S121: according to frequency, amplitude and the phase of above-mentioned criterion carrier wave, the three or three of the submodule of each MMC is generated
Angle carrier wave and the 4th triangular carrier, the frequency and amplitude of third triangular carrier and the 4th triangular carrier and the frequency of criterion carrier wave and
Amplitude is all the same, and the phase of third triangular carrier is identical as the phase of criterion carrier wave, and the phase and criterion of the 4th triangular carrier carry
The opposite in phase of wave；The step uses carrier wave reverse phase SPWM method, and two groups of generation is equal with the amplitude and frequency of above-mentioned criterion carrier wave
The triangular carrier of identical MMC submodule, as shown in fig. 7, wherein the phase of one group of triangular carrier D1~D8 and above-mentioned criterion carry
The phase of wave is identical, the opposite in phase of the phase of another set triangular carrier E1~E8 and above-mentioned criterion carrier wave.
Step S122: third triangular carrier and the 4th triangular carrier are compared with sinusoidal modulation wave respectively, generate MMC
Submodule in each switching tube PWM driving pulse.
Specifically, as shown in figure 8, third triangular carrier and the 4th triangular carrier are compared with sinusoidal modulation wave respectively
Compared with the first PWM driving pulse of first switch tube and the second PWM driving pulse of second switch being obtained, then respectively by
One PWM driving pulse and the second PWM driving pulse reverse phase obtain the third PWM driving pulse and the 4th switch of third switching tube
4th PWM driving pulse of pipe.
It should be noted that the sinusoidal modulation wave mentioned in the embodiment of the present invention is in the upper bridge arm part of single-phase MMC topology
With lower bridge arm partial inversion, the phase by pi of two-part sinusoidal modulation wave.
In a preferred embodiment, S122 obtains the PWM driving arteries and veins of each switching tube in the submodule of MMC through the above steps
It after punching, is split using PWM driving pulse of the pulsqe distributor to each switching tube, the PWM of each switching tube after being divided
Driving pulse inputs the PWM driving pulse of each switching tube after segmentation in the submodule of each MMC, when PWM driving pulse is height
When level, the conducting of control switch pipe, when PWM driving pulse is low level, control switch pipe shutdown, then by each MMC submodule
The output voltage of block is superimposed, and generates final output voltage waveforms.Fig. 9 is shown to be driven using the PWM of undivided each switching tube
The output waveform of MMC submodule when moving pulse, MMC when Figure 10 show the PWM driving pulse using each switching tube after segmentation
The output waveform of submodule, it can be seen that the PWM driving pulse of each switching tube is divided, the one-off of each switching tube just divides
It is segmented into multiple progress, i.e., within the time that switching tube once opens to shutdown, carries out multiple open and is acted with shutdown, improved
The equivalent switching frequency of MMC submodule output voltage, improves the output waveform of MMC submodule.
It should be noted that the control method that the embodiment of the present invention proposes is that the power device in MMC submodule is equivalent
Dead zone is often added in drive pulse signal in actual application for perfect switch, so that straight-through risk is avoided,
And it also needs that capacitance voltage Balance route is added, to guarantee the safe and reliable operation of circuit.
MMC controlling party to the T-type three-level topology based on reverse blocking IGBT proposed using the embodiment of the present invention below
The MATLAB simulation result that method controls MMC is illustrated, with verify the embodiment of the present invention proposition control method can
Row, equally with submodule be the T-type tri-level half-bridge structure based on reverse blocking IGBT and every phase submodule number be 8 it is single-phase
For MMC topology.
Figure 11 show the simulation model of the single-phase MMC topology of the T-type tri-level half-bridge submodule based on reverse blocking IGBT,
The parameter of simulation model element is shown in Table 1, which replaces the model of RB-IGBT, base with single IGBT and Diode series
It is as shown in figure 12 in the simulation model of the T-type tri-level half-bridge submodule of reverse blocking IGBT, it is proposed using the embodiment of the present invention
Control method, the output voltage and output current wave of obtained MMC topology simulation model are as shown in figure 13, wherein top half
For output voltage waveforms, lower half portion is output current wave.
Table 1
| Main circuit parameter title | Numerical value |
| Direct current power source voltage | 10kV |
| Load resistance Ra | 60Ω |
| Load inductance La | 1.6mH |
| AC reactor L1/L2 | 2.5mH |
| Power cell DC capacitor C1、C2 | 2.2mF、4.4mF |
| Carrier frequency | 5kHz |
| Frequency of modulated wave | 50Hz |
| Modulation ratio | 0.9 |
Figure 14 show the emulation mould of the single-phase MMC topology to the T-type tri-level half-bridge submodule based on reverse blocking IGBT
Type output voltage carry out fft analysis as a result, Figure 15 is shown to the T-type tri-level half-bridge submodule based on reverse blocking IGBT
The simulation model output electric current of single-phase MMC topology carries out the result of fft analysis.
Selecting the single-phase MMC circuit based on conventional half-bridge submodule as shown in figure 16 is comparison other, equally takes submodule
Block number mesh is 8, that is, constitutes single-phase five level half-bridges MMC circuit.Under identical simulation parameter, for single-phase five level half-bridge
MMC circuit, using phase-shifted SPWM technology as its control method, the output voltage of single-phase five level half-bridges MMC circuit with
The waveform for exporting electric current is as shown in figure 17, and wherein top half is output voltage waveforms, and lower half portion is output current wave.
Equally, the output voltage to single-phase five level half-bridges MMC circuit and output electric current carry out fft analysis, analyze result
As shown in Figure 18 and Figure 19, wherein Figure 18 is to carry out to output voltage that FFT is analyzed as a result, Figure 19 is to output electric current
Carry out the result that FFT is analyzed.
T-type tri-level half-bridge submodule list according to above-mentioned single-phase five level half-bridges MMC circuit and based on reverse blocking IGBT
The fft analysis of phase MMC circuit output waveform is as a result, obtain output result ratio of the two in the case where simulated conditions are equal
Compared with specific as shown in table 2.
Table 2
As can be seen that the single-phase MMC circuit of T-type tri-level half-bridge submodule based on reverse blocking IGBT is proposed by taking
Control method can stable operation, the single-phase MMC circuit output voltage of T-type tri-level half-bridge submodule based on reverse blocking IGBT
The level number contained is greater than the level number that single-phase five level half-bridges MMC circuit output voltage contains.Theoretically, output voltage contains
The more, the corresponding multi-step type output voltage that generates more approaches standard sine signal to some level numbers, and the harmonic wave contained is less.It is logical
Emulation is crossed, THD (total harmonic distortion) value of the single-phase MMC output voltage of T-type tri-level half-bridge submodule based on reverse blocking IGBT
It is less than single-phase five level half-bridges MMC output voltage THD value, is just consistent with theory.
It can be obtained by fft analysis result, in addition to fundamental wave, low-order harmonic substantially eliminates output voltage, and higher hamonic wave is mainly concentrated
Near 40kHz, good output characteristics can be realized without filtering, simplify filter design, reduce costs.
Phase-shifted SPWM and carrier wave stacking SPWM technology are combined by the embodiment of the present invention, constitute new open loop mixing
Control method can guarantee the T-type tri-level half-bridge based on reverse blocking IGBT by using the new open loop mixing control method
The operation of submodule MMC circuit stability, can produce the output voltage containing more level, closer to standard sine wave, harmonic wave
Content is less, simplifies filter design.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (6)
1. a kind of MMC control method of the T-type three-level topology based on reverse blocking IGBT, which is characterized in that the submodule of the MMC
Block is the T-type three-level topology structure based on reverse blocking IGBT；
The control method includes:
According to the first triangular carrier and sinusoidal modulation wave, the PWM driving pulse of each switching tube in the submodule of the MMC is generated；
The PWM driving pulse of each switching tube in the submodule of the MMC is split, each switching tube after being divided
PWM driving pulse；
The PWM driving pulse of each switching tube after the segmentation is inputted in the submodule of each MMC, as the PWM
When driving pulse is high level, the switching tube conducting is controlled, when the PWM driving pulse is low level, is opened described in control
Close pipe shutdown.
2. control method according to claim 1, which is characterized in that raw according to the first triangular carrier and sinusoidal modulation wave
The PWM driving pulse of each switching tube in submodule at the MMC, comprising:
According to first triangular carrier, the criterion carrier wave of the submodule of each MMC is generated；
According to the criterion carrier wave and the sinusoidal modulation wave, the PWM driving arteries and veins of each switching tube in the submodule of the MMC is generated
Punching.
3. control method according to claim 2, which is characterized in that according to first triangular carrier, generate each described
The criterion carrier wave of the submodule of MMC, comprising:
By the first predetermined angle of the first triangular carrier phase shift, the multiple groups second of the first predetermined angle described in phase phase difference are generated
Triangular carrier, the criterion carrier wave of the submodule as each MMC, the son of the group number and the MMC of second triangular carrier
The number of module is identical.
4. control method according to claim 2 or 3, which is characterized in that according to the criterion carrier wave and the sinusoidal tune
Wave processed generates the PWM driving pulse of each switching tube in the submodule of the MMC, comprising:
According to frequency, amplitude and the phase of the criterion carrier wave, the third triangular carrier and the of the submodule of each MMC is generated
The frequency and amplitude of four triangular carriers, the third triangular carrier and the 4th triangular carrier and the frequency and width of the criterion carrier wave
It is worth all the same, the phase of the third triangular carrier is identical as the phase of the criterion carrier wave, the phase of the 4th triangular carrier
The opposite in phase of position and the criterion carrier wave；
The third triangular carrier and the 4th triangular carrier are compared with the sinusoidal modulation wave respectively, generate the MMC
Submodule in each switching tube PWM driving pulse.
5. control method according to claim 4, which is characterized in that the submodule of the MMC is based on reverse blocking IGBT
T-type tri-level half-bridge structure, comprising: the first switch tube and second switch being serially connected, the one of the first switch tube
End connects the first input end of the submodule, and the other end passes through son described in the first capacitor and the second capacitance connection being serially connected
Second input terminal of module, the both ends of the second switch are separately connected the first input end and the second input terminal, described
One end of reverse blocking IGBT connects the first input end, and the other end is connected among the first capacitor and the second capacitor, institute
Stating reverse blocking IGBT includes third switching tube and the 4th switching tube；
The third triangular carrier and the 4th triangular carrier are compared with the sinusoidal modulation wave respectively, generate the MMC
Submodule in each switching tube PWM driving pulse, comprising:
The third triangular carrier and the 4th triangular carrier are compared with the sinusoidal modulation wave respectively, obtain described first
First PWM driving pulse of switching tube and the second PWM driving pulse of second switch；
According to first PWM driving pulse and the second PWM driving pulse, the 3rd PWM driving of the third switching tube is obtained
4th PWM driving pulse of pulse and the 4th switching tube, the third PWM driving pulse and the first PWM drive arteries and veins
Rush reverse phase, the 4th PWM driving pulse and the second PWM driving pulse reverse phase.
6. control method according to claim 1-5, which is characterized in that using pulsqe distributor to the MMC
Submodule in the PWM driving pulse of each switching tube be split, the PWM of each switching tube after being divided drives arteries and veins
Punching.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111327081A (en) * | 2020-02-25 | 2020-06-23 | 东莞市峰谷科技有限公司 | Control method of two-phase three-wire inverter |
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2018
- 2018-10-08 CN CN201811168432.8A patent/CN109412441A/en active Pending
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| Title |
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| 杨晓峰等: "模块组合型多电平变换器的控制策略", 《北京交通大学学报》 * |
| 邱贺等: "基于逆阻型IGBT的T型三电平逆变电路", 《中国优秀硕士学位论文全文数据库 工程科技II辑》 * |
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| CN111327081A (en) * | 2020-02-25 | 2020-06-23 | 东莞市峰谷科技有限公司 | Control method of two-phase three-wire inverter |
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