CN109411627B - Organic light-emitting diode - Google Patents

Organic light-emitting diode Download PDF

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CN109411627B
CN109411627B CN201811276063.4A CN201811276063A CN109411627B CN 109411627 B CN109411627 B CN 109411627B CN 201811276063 A CN201811276063 A CN 201811276063A CN 109411627 B CN109411627 B CN 109411627B
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transport layer
semiconductor material
electrode structure
composite electrode
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CN109411627A (en
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李育豪
朱映光
谢静
于倩倩
郭立雪
胡永岚
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Guan Yeolight Technology Co Ltd
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    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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    • H10K50/00—Organic light-emitting devices
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Abstract

The application discloses an organic light-emitting diode with a non-pixelization short-circuit prevention design structure, which comprises a light-emitting layer, an electron transport layer and a hole transport layer, wherein the electron transport layer and the hole transport layer are respectively positioned on two sides of the light-emitting layer; the side of the electron transport layer and the side of the hole transport layer far away from the luminescent layer are simultaneously provided with a composite electrode structure, or the side of the electron transport layer and the side of the hole transport layer far away from the luminescent layer are respectively provided with a single electrode/composite electrode structure or a composite electrode structure/single electrode; the composite electrode structure sequentially comprises a single electrode, a semiconductor material layer and an extended high-conductivity layer from outside to inside; the single electrode is the first electrode or the second electrode. The extended high-conductivity layer in the design scheme of the application can lose efficacy after short circuit, and a reverse bias structure appears to block short circuit failure current from passing through, so that the purpose of short circuit protection is achieved, the reliability of the screen body is improved, and the service life of the organic light-emitting diode is prolonged.

Description

Organic light-emitting diode
Technical Field
The present disclosure relates generally to the field of lighting devices, and more particularly to an organic light emitting diode without metal mesh short circuit protection.
Background
The Organic Light Emitting Diode (OLED) screen inevitably has dust particles, burrs, pinholes, cracks and other defect points during the manufacturing process, and the distance between the anode and the cathode of the OLED screen is usually very small (about tens to hundreds of nanometers). Therefore, in this state, the anode and the cathode may come into direct contact to cause a defect (referred to as a short-circuit point), or the organic layer between the anode and the cathode may become thinner than other positions. When an OLED device is operated, current tends to pass more from such defect points than from other locations. Causing heat to build up at such defect points. Resulting in a compromise of the quality and reliability of the entire OLED device.
Under the same other conditions, the larger the light-emitting area of the OLED screen is, the higher the possibility of short-circuit points is. It is possible to reduce shorting by increasing the thickness of the organic layer, but this requires higher drive voltages for the OLED device, which affects device efficiency, and does not completely eliminate shorting.
The above-mentioned problem of the short circuit point may be solved by adding the short circuit prevention part, and in PCT patent application nos. 201380060179.3, 201580014301.2 and 201580025083.2 which enter the chinese national phase, the reliability of the device may be effectively increased by making the short circuit prevention part using a structure or a material.
The design of the short-circuit prevention portion in the above 3 patents mainly utilizes the material or geometric structure used for the short-circuit prevention portion to achieve a certain set of impedance generation, and the theoretical formula is as follows:
Figure 761105DEST_PATH_IMAGE001
the short-circuit prevention component can avoid the short circuit condition (because the resistor is connected in series with the short-circuit device) when the defect occurs, so that two important factors of the short-circuit prevention system need to be considered, namely (1) the pixel of the screen body (namely n in the formula)cell) Enough; (2) short-circuit prevention resistance (i.e. R in the above formula)cell-spl) If the two requirements are not satisfied, the short circuit prevention effect is not obvious, and high heat is generated at the short circuit point due to high current (P = I)2P = power, I = current, R = resistance), thereby reducing its reliability; experiments indicate that the short-circuit prevention system is suitable for supplying power with a "constant voltage", that is, the current can have a large variation range, however, most power supply devices cannot reach the short-circuit prevention system, and the OLED lighting panel is mainly based on a "constant current" power supply, and the short-circuit protection mechanism causes the decrease of the photoelectric performance of the panel due to a large amount of failure current caused by a short-circuit point (i.e., the current passing through the short-circuit point (the current effectively supplying the normal OLED device + the failure current at the short-circuit point ═ the total output current of the constant power supply)). The resistance of the loop protection device is large enough to match with the equivalent resistance of the luminous pixel, so that the loop protection design in the form of series resistance can be achieved, the equivalent resistance value of the luminous pixel is usually in the order of tens of thousands to hundreds of thousands of ohms after calculation, and the resistance of the loop protection device is usually far from the order of magnitude, so that a high proportion of short-circuit current can pass through a short-circuit point, and the whole light of the screen body is causedThe efficacy changes.
Because the effective light-emitting area of the illuminating screen body is large, in order to avoid the failure of the whole screen body caused by a small short-circuit defect, the pixelation is a common method, such as the solutions; the pixellated OLED panel exhibits significant short-circuit protection, but at the same time pixellation causes a number of performance losses, such as: (1) the proportion of the effective light-emitting area is reduced, so that the expected level can be reached only by providing higher brightness in the limited light-emitting area, and the service life of an OLED screen body is influenced; (2) the OLED panel may shrink in local light emitting area of the light emitting edge after a long time use, and the length of the light emitting edge is greatly increased as a result of pixelation, that is, each pixel creates a light emitting edge (for example, 100 × 100 area of the panel is cut into 100 pixels of 10 × 10, and the side length ratio is estimated to be about 40 × 100/400=40 times), which also leads to a significant reduction in the service life of the OLED panel as a whole.
Disclosure of Invention
In view of the above-mentioned drawbacks or deficiencies in the prior art, it would be desirable to provide an organic light emitting diode with short protection function that does not require pixelation.
In a first aspect, the present application provides an organic light emitting diode, including a light emitting layer, an electron transport layer and a hole transport layer respectively located at two sides of the light emitting layer; a composite electrode structure is arranged on one side of the electron transport layer and one side of the hole transport layer, which are far away from the luminescent layer, or a single electrode/composite electrode structure or a composite electrode structure/a single electrode are respectively arranged on one side of the electron transport layer and one side of the hole transport layer, which are far away from the luminescent layer; the composite electrode structure sequentially comprises a single electrode, a semiconductor material layer and an extended high-conductivity layer from outside to inside; the single electrode is a first electrode or a second electrode.
According to the technical solution provided by the embodiment of the present application, the carrier transport property of the semiconductor material layer in the composite electrode structure is different from the carrier transport property of the electron transport layer or the hole transport layer adjacent to the composite electrode structure.
According to the technical scheme provided by the embodiment of the application, the material of the extended high-conductivity layer is one or a combination of a plurality of metals, metal oxides, inorganic semiconductor materials, n-type or p-type doped organic semiconductor materials, carbon materials or conductive polymer materials.
According to the technical scheme provided by the embodiment of the application, in the structure of the composite electrode: the carrier mobility of the extended high-conductivity layer is 10 times or more, preferably 1000 times or more, the carrier mobility in the semiconductor material layer.
According to the technical scheme provided by the embodiment of the application, the conducting voltage span range of the composite electrode structure is 0.01V to 2V.
According to the technical scheme provided by the embodiment of the application, the thickness range of the extended high-conductivity layer is less than or equal to 100nm, and preferably less than or equal to 10 nm.
According to the technical scheme provided by the embodiment of the application, the average penetration rate of the extended high-conductivity layer in a visible light region with the wavelength of 450nm to 700nm is more than 50%.
According to the technical scheme provided by the embodiment of the application, the material in the semiconductor material layer is one or a combination of more of metal, metal oxide, inorganic semiconductor material and organic semiconductor material.
According to the technical scheme provided by the embodiment of the application, the thickness range of the semiconductor material layer is greater than or equal to 5nm and less than or equal to 1000 nm.
The invention designs a composite electrode structure in the organic light-emitting diode, utilizes a voltage-current curve which is extremely close to an ohm's constant rate to appear between an electron type (cavity type) device, namely an electrode-cavity (or electron) transmission material-electrode, combines the diode voltage-current curve of the organic light-emitting diode, and the organic light-emitting diode can achieve a state of conduction from a condition on an extended high-conductivity layer.
According to some embodiments of the present application, the composite electrode structure achieves a short circuit protection effect by a very small short circuit current ratio; in some embodiments, the composite electrode structure forms an open circuit by burning out the extended high conductivity layer or forming a reverse bias structure opposite to the OLED, thereby avoiding the risk of short circuit. In some embodiments, the composite electrode structure is formed in a discontinuous state, so that the composite electrode structure does not have an effective carrier transmission path, thereby directly causing an open circuit phenomenon and avoiding a short circuit phenomenon.
Therefore, in the non-pixelization short circuit prevention scheme designed in the scheme, the reliability of the screen body is improved, the defects caused by the pixelization short circuit prevention design are eliminated, and the service life of the organic light emitting diode is prolonged.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a schematic mechanical diagram of a first embodiment of the present application;
FIG. 2 is a schematic mechanical diagram of a second embodiment of the present application;
FIG. 3 is a schematic mechanical diagram of a third embodiment of the present application;
FIG. 4 is a schematic mechanical diagram of a fourth embodiment of the present application;
FIG. 5 is a schematic mechanical diagram of a fifth embodiment of the present application;
FIG. 6 is a schematic mechanical diagram of a sixth embodiment of the present application;
reference numbers in the figures:
10. a substrate; 20. a first electrode; 30. a hole transport layer; 40. a light emitting layer; 50. an electron transport layer; 60. a second electrode, 70, a composite electrode structure; 71. extending the high conductivity layer; 72. a layer of semiconductor material; 71-1, extending a high conductivity layer; 71-2, extending a high conductivity layer down; 72-1, an upper layer of semiconductor material; 72-2, a lower semiconductor material layer.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
The organic light-emitting diode comprises a light-emitting layer, an electron transport layer and a hole transport layer, wherein the electron transport layer and the hole transport layer are respectively positioned on two sides of the light-emitting layer; the side of the electron transport layer and the side of the hole transport layer, which are far away from the luminescent layer, are provided with a composite electrode structure at the same time, or the side of the electron transport layer and the side of the hole transport layer, which are far away from the luminescent layer, are provided with a single electrode/composite electrode structure and a composite electrode structure/single electrode respectively; the composite electrode structure sequentially comprises a single electrode, a semiconductor material layer and an extended high-conductivity layer from outside to inside (from the outer side of the organic light-emitting diode to the inner side); the single electrode is a first electrode or a second electrode; the single electrodes on both sides of the light emitting layer have different polarities. The semiconductor material layer on the two sides of the extended high-conductivity layer is different from the carrier transport property in the electron transport layer or the hole transport layer.
As shown in fig. 1, a schematic structural diagram of a first embodiment of the present application is shown: the composite electrode structure 70 is only designed on one side of the normal organic light emitting diode close to the hole transport layer 30, that is, the organic light emitting diode sequentially comprises, from bottom to top, a substrate 10, a first electrode 20, a semiconductor material layer 72, an extended high conductivity layer 71, the hole transport layer 30, a light emitting layer 40, an electron transport layer 50, and a second electrode 60; wherein the first electrode 20, the semiconductor material layer 72 and the extended high conductivity layer 71 form a composite electrode structure 70; in the present embodiment, the material in the semiconductor material layer 72 is an electron transport material having a carrier type different from that of the hole transport layer 30 on the other side of the extended high conductivity layer 71.
As shown in fig. 2, a schematic structural diagram of a second embodiment of the present application: the composite electrode structure 70 is only designed on one side of the normal organic light emitting diode close to the electron transport layer 50, that is, the organic light emitting diode sequentially comprises a substrate 10, a first electrode 20, a hole transport layer 30, a light emitting layer 40, an electron transport layer 50, an extended high conductivity layer 71, a semiconductor material layer 72 and a second electrode 60 from bottom to top; wherein the extended high conductivity layer 71, the semiconductor material layer 72 and the second electrode 60 form a composite electrode structure 70; in the present embodiment, the material in the semiconductor material layer 72 is a hole transport material having a carrier type different from that of the electron transport layer 50 extending to the other side of the high conductivity layer 71.
As shown in fig. 3, the composite electrode structure 70 is only designed on one side of the inverted organic light emitting diode close to the electron transport layer 50, that is, the organic light emitting diode sequentially includes, from bottom to top, the substrate 10, the first electrode 20, the semiconductor material layer 72, the extended high conductivity layer 71, the electron transport layer 50, the light emitting layer 40, the hole transport layer 30, and the second electrode 60; wherein the first electrode 20, the semiconductor material layer 72 and the extended high conductivity layer 71 form a composite electrode structure 70; in the present embodiment, the material in the semiconductor material layer 72 is a hole transport material having a carrier type different from that of the electron transport layer 50 on the other side of the extended high conductivity layer 71.
As shown in fig. 4, the composite electrode structure 70 is only designed on the side of the inverted organic light emitting diode close to the hole transport layer 30, that is, the organic light emitting diode includes, from bottom to top, the substrate 10, the first electrode 20, the electron transport layer 50, the light emitting layer 40, the hole transport layer 30, the extended high conductivity layer 71, the semiconductor material layer 72, and the second electrode 60; the composite electrode structure 70 is composed of the extended high conductivity layer 71, the semiconductor material layer 72 and the second electrode 60, and in the present embodiment, the material in the semiconductor material layer 72 is an electron transport material with a carrier type different from that of the hole transport layer 30 on the other side of the extended high conductivity layer 71.
As shown in fig. 5, the composite electrode structure 70 is designed on both sides of the normal-type organic light emitting diode, that is, the organic light emitting diode sequentially includes, from bottom to top, a substrate 10, a first electrode 20, a lower semiconductor material layer 72-2, a lower extended high conductivity layer 71-2, a hole transport layer 30, a light emitting layer 40, an electron transport layer 50, an upper extended high conductivity layer 71-1, an upper semiconductor material layer 72-1, and a second electrode 60; wherein the first electrode 20, the lower semiconductor material layer 72-2 and the lower extended high conductivity layer 71-2 form a composite electrode structure 70, and the upper extended high conductivity layer 71-1, the upper semiconductor material layer 72-1 and the second electrode 60 also form the composite electrode structure 70; in the present embodiment, the material in the lower semiconductor material layer 72-2 is an electron transport material having a carrier type different from that of the hole transport layer 30 on the other side of the lower extended high conductivity layer 71-2, and the material in the upper semiconductor material layer 72-1 is a hole transport material having a carrier type different from that of the electron transport layer 50 on the other side of the upper extended high conductivity layer 71-1.
As shown in fig. 6, the composite electrode structure 70 is designed on both sides of the inverted organic light emitting diode, that is, the organic light emitting diode sequentially includes, from bottom to top, a substrate 10, a first electrode 20, a lower semiconductor material layer 72-2, a lower extended high conductivity layer 71-2, an electron transport layer 50, a light emitting layer 40, a hole transport layer 30, an upper extended high conductivity layer 71-1, an upper semiconductor material layer 72-1, and a second electrode 60; wherein the first electrode 20, the lower semiconductor material layer 72-2 and the lower extended high conductivity layer 71-2 form a composite electrode structure, and the upper extended high conductivity layer 71-1, the upper semiconductor material layer 72-1 and the second electrode 60 also form a composite electrode structure 70; in the present embodiment, the material in the lower semiconductor material layer 72-2 is a hole transport material with a carrier type different from that of the electron transport layer 50 on the other side of the lower extended high conductivity layer 71-2; the material in the upper semiconductor material layer 72-1 is an electron transport type material having a carrier type different from that of the hole transport layer 30 at the other side of the upper extended high conductivity layer 71-1.
In the above embodiments, the material of the extended high conductivity layer in the first to fourth embodiments and the material of the upper extended high conductivity layer and the lower extended high conductivity layer in the fifth and sixth embodiments is one or a combination of a plurality of high conductivity materials, such as metal, metal oxide, inorganic semiconductor material, n-type or p-type doped organic semiconductor material, carbon material, conductive polymer material, and the like.
In the above embodiments, the material of the electron transport layer may be an n-type doped or undoped electron transport material; the material of the hole transport layer may be a p-type doped or undoped hole transport type material.
In the above embodiments, the thickness of the extended high conductivity layer is 10nm, and in other embodiments, the thickness of the extended high conductivity layer may be other values in a range of 100nm or less. And in the composite electrode structure: the carrier mobility of the extended high conductivity layer is more than 10 times, for example 1000 times, the carrier mobility in the semiconductor material layer. This ensures that the extended high conductivity layer has sufficient free charge balance to extend electrons or holes of the transport material having different transport characteristics on both sides of the high conductivity layer.
In the above embodiments, the turn-on voltage of the composite electrode structure is 2V, and in other embodiments, the turn-on voltage of the composite electrode structure may be other values from 0.01V to 2V, such as 1V, that is, the voltage difference between the standard organic light emitting diode device structure and the organic light emitting diode device having the composite electrode structure does not exceed 2V when the same current density is achieved.
Assuming that the consumption voltage of the composite electrode structure is 0.5V and the device operation voltage is 6V (i.e. the total voltage is 6.5V) when the organic light emitting diode panel operates, the conduction voltage across the composite electrode structure is 0.5V, so that the size of the defect point is 1/10000 of the effective light emitting area and the total operation current is 100 mA. The equivalent impedance of the organic light emitting diode per unit area is 600000 omega, the equivalent impedance corresponding to the resistance effect of the organic material in the composite electrode is 50000 omega, the short-circuit current is 0.13mA, and only accounts for 0.13% of the total operation current, so that the short-circuit protection effect can be effectively achieved.
Further, assuming that the consumption voltage of the composite electrode structure is 0.01V and the device operation voltage is 6V (i.e. the total voltage is 6.01V) when the organic light emitting diode panel operates, the conduction voltage across the composite electrode structure is 0.01V, so that the size of the defect point is 1/10000 of the effective light emitting area and the total operation current is 100 mA. The equivalent impedance of the organic light-emitting diode per unit area is 600000 omega, the corresponding equivalent impedance of the resistance effect of the organic material in the composite electrode is 1000 omega, the short-circuit current is 5.67mA, the average current density of the original standard screen body is 0.01mA, and the current density of the defect point is increased by 567 times, so that the extended high-conductivity layer is burnt out to form open circuit; furthermore, the front carrier transmission layer and the rear carrier transmission layer of the high-conductivity layer form a reverse bias structure which is opposite to that of the organic light-emitting diode, and the risk of short circuit of the screen body is avoided.
If the screen has larger defects, the composite electrode structure cannot be formed, i.e. the high conductivity layer is extended to be a discontinuous state at the defect, and the point does not have an effective carrier transmission path, thereby directly causing an open circuit phenomenon and avoiding a short circuit phenomenon.
Therefore, the relationship between the equivalent impedance corresponding to the resistance effect of the organic material in the composite electrode structure and the equivalent impedance of the organic light emitting diode, and the size of the defect determine the short-circuit prevention mode.
In the above embodiment, the extended high-conductivity layer has an average transmittance of more than 50% in a visible light region having a wavelength of 450 to 700 nm. The transmittance of more than 50% is only a basic requirement for light transmission, and in practical operation, the transmittance of the extended high-conductivity layer can be selected according to practical requirements, for example, the transmittance of a part of visible light region and the transmittance of a wavelength band of light-emitting spectrum repetition of the OLED device have a more obvious optical cavity effect between 50% and 75%; between 75-100% optical cavity effect can be ignored optionally, and the transmittance of the extended high conductivity layer should be selected to be more than 75%; since the optical resonance cavity effect affects the light emission characteristics, it is well controlled to suppress unwanted wavelength bands while increasing specific wavelength bands.
In other embodiments, for example, the transmittance of the 500-550nm green visible light extended high conductivity layer and the transmittance of the OLED device in the repeat wavelength band are between 50-60%, i.e. the reflectance may fall between 40-50% (the total of transmittance and reflectance is 100% regardless of the absorption state of the material), and by adjusting the appropriate green OLED device in the optical system, it is desirable to obtain an optical gain of about three times by G = (1+ R)/(1-R), where R is the reflectance, effectively increase the optical intensity in a specific wavelength band, and also increase the color purity, and then a composite electrode structure extending the transmittance of the high conductivity layer to approximately 50-60% may be selected.
In other embodiments, for example, if the transmittance of the 450-700nm visible light region extended high conductivity layer and the transmittance of the OLED device light emission spectrum repeat wavelength band are above 80%, a weak optical cavity effect exists, i.e., the reflectance may fall below 20% (not considering the total of the transmittance and the reflectance as 100% in the material absorption state), and the white OLED device in the full-wave band is adjusted in the optical system, an optical gain of about 1.4 times can be obtained by G = (1+ R)/(1-R), where R is the reflectance, and the specific wavelength band optical intensity is increased without significantly affecting the white light spectrum, and the OLED device structure can be adjusted to reach an ideal white light spectrum, and then a composite electrode extending the transmittance of the high conductivity layer more than 80% can be selected.
In the above embodiments, the material in the semiconductor material layer is one or a combination of metals, metal oxides, inorganic semiconductor materials, and organic semiconductor materials.
In the above embodiments, the thickness of the semiconductor material layer is 500nm, in other embodiments, the thickness of the semiconductor material layer is 5nm, in some embodiments, the thickness of the semiconductor material layer is 1000nm, and in other embodiments, the thickness of the semiconductor material layer may be other values of greater than or equal to 5nm and less than or equal to 1000 nm. The consumption voltage of the semiconductor material layer generally increases with increasing thickness, and the increase in the amount of electrically good material is small, so that the thickness of the semiconductor material layer can be designed according to the carrier mobility or conductivity of the selected material.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims (9)

1. An organic light emitting diode is characterized by comprising a light emitting layer, an electron transport layer and a hole transport layer, wherein the electron transport layer and the hole transport layer are respectively positioned on two sides of the light emitting layer; a composite electrode structure is arranged on one side of the electron transport layer and one side of the hole transport layer, which are far away from the luminescent layer, or a single electrode/composite electrode structure or a composite electrode structure/a single electrode are respectively arranged on one side of the electron transport layer and one side of the hole transport layer, which are far away from the luminescent layer; the composite electrode structure sequentially comprises a first electrode or a second electrode, a semiconductor material layer and an extending high-conductivity layer from the outside of the organic light-emitting diode to the inside of the organic light-emitting diode; the single electrode is a first electrode or a second electrode;
the carrier type of the semiconductor material layer in the composite electrode structure is different from the carrier type of the electron transport layer or the hole transport layer adjacent to the composite electrode structure;
the extended high-conductivity layer has a higher conductivity than the semiconductor material layer, and is characterized in that: the carrier mobility of the extended high conductivity layer is more than 10 times of the carrier mobility in the semiconductor material layer.
2. The oled of claim 1, wherein the composite electrode structure comprises: the carrier mobility of the extended high conductivity layer is more than 1000 times of the carrier mobility in the semiconductor material layer.
3. The OLED as claimed in claim 1 or 2, wherein the conducting voltage across the composite electrode structure is in a range of 0.01V to 2V.
4. The OLED of claim 3, wherein the material of the extended high conductivity layer is one or more of metal, inorganic semiconductor material, n-type or p-type doped organic semiconductor material, carbon material or conductive polymer material.
5. The OLED of claim 3, wherein the extended high conductivity layer has a thickness in the range of 100nm or less.
6. The OLED of claim 3, wherein the extended high conductivity layer has a thickness in the range of 10nm or less.
7. The oled of claim 3 wherein the extended high conductivity layer has an average transmittance in the visible light range of 450nm to 700nm of greater than 50%.
8. The organic light-emitting diode of claim 3, wherein the material in the semiconductor material layer is one or more of an inorganic semiconductor material and an organic semiconductor material.
9. The OLED of claim 3, wherein the thickness of the semiconductor material layer is in the range of 5nm or more and 1000nm or less.
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