CN109411480A - A kind of three-dimensional storage and preparation method thereof - Google Patents
A kind of three-dimensional storage and preparation method thereof Download PDFInfo
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- CN109411480A CN109411480A CN201811316987.2A CN201811316987A CN109411480A CN 109411480 A CN109411480 A CN 109411480A CN 201811316987 A CN201811316987 A CN 201811316987A CN 109411480 A CN109411480 A CN 109411480A
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- 238000003860 storage Methods 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000006396 nitration reaction Methods 0.000 claims abstract description 156
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000004888 barrier function Effects 0.000 claims abstract description 39
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 230000000717 retained effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 273
- 239000002346 layers by function Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000009825 accumulation Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007786 learning performance Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of three-dimensional storages and preparation method thereof, comprising: forms stack layer in substrate surface and through the channel hole of stack layer, stack layer includes the first oxide layer and the first nitration case that multilayer is arranged alternately；The second nitration case is formed on the side wall in channel hole, oxidation is carried out to the second nitration case and forms barrier layer, and retains the second nitration case that part is formed on the first nitration case, wherein the second nitration case retained forms the first extension of the first nitration case；The first nitration case and the first extension in stack layer are removed, and forms grid layer in the region of the first nitration case, forms gate extension in the region of the first extension, wherein gate extension extends to inside barrier layer from grid layer.For the present invention in the case where not influencing three-dimensional storage electric property, avoiding the second nitration case peroxidating causes the nitration case in stack layer to be oxidized, and then the problem for causing the aperture size of film layer structure in channel hole excessive.
Description
Technical field
The present invention relates to three-dimensional storage technical fields more particularly to a kind of three-dimensional storage and preparation method thereof.
Background technique
Three-dimensional storage (3D NAND) stacks storage unit on the direction perpendicular to substrate, can be in lesser face
More storage units are formed in product, relative to conventional two-dimensional memory, there is bigger memory capacity, are current storage necks
One the main direction of development in domain.
It when making the process of three-dimensional storage, needs to make stack layer on substrate, which includes multilayer alternating
The oxide layer and nitration case of arrangement need to perform etching stack layer later to form channel hole, and form function in channel hole
Layer, which includes barrier layer, charge storage layer, tunnel layer and the channel layer etc. being successively set on the side wall of channel hole.But
It is that the aperture of the film layer structure in existing channel hole is excessive, will affect the electric property of three-dimensional storage.
Summary of the invention
In view of this, the present invention provides a kind of three-dimensional storage and preparation method thereof, to solve in existing channel hole
Film layer structure the excessive problem in aperture.
To achieve the above object, the invention provides the following technical scheme:
A kind of production method of three-dimensional storage, comprising:
Substrate is provided, forms stack layer in the substrate surface and through the channel hole of the stack layer, the stacking
Layer includes the first oxide layer and the first nitration case that multilayer is arranged alternately；
The second nitration case is formed on the side wall in the channel hole, oxidation is carried out to second nitration case and forms blocking
Layer, and retain second nitration case that part is formed on first nitration case, wherein second nitration case retained
Form the first extension of first nitration case；
First nitration case and first extension in the stack layer are removed, and in first nitration case
Region forms grid layer, forms gate extension in the region of first extension, wherein the gate extension is from described
Grid layer extends to inside the barrier layer.
Optionally, stack layer is formed in the substrate surface and include: through the channel hole of the stack layer
Sub- stack layer is formed in the substrate surface, and forms the sub-channel hole for running through the sub- stack layer；
Wherein, the multiple sub- stack layers being arranged successively on the direction perpendicular to the substrate constitute the stacking
Layer, the multiple sub-channel holes for being arranged successively and being interconnected on the direction perpendicular to the substrate constitute the channel
Hole.
Optionally, retaining second nitration case that part is formed on first nitration case includes:
Retain second nitration case being located on first nitration case of the intersection in the sub-channel hole.
Optionally, retain second nitration case being located on first nitration case of the intersection in the sub-channel hole
Include:
Retain second nitration case being located on first nitration case of the intersection in the sub-channel hole.
Optionally, on the direction perpendicular to the substrate, the width of the gate extension is less than the grid layer
Width.
Optionally, on the extending direction of the grid layer, the length of the gate extension is less than two neighboring described
The length on the barrier layer of sub-channel hole intersection.
Optionally, before removing first nitration case and first extension in the stack layer, further includes:
Successively form charge storage layer, tunnel layer and channel layer on the side wall in the channel hole, it is the barrier layer, described
Charge storage layer, the tunnel layer and the channel layer constitute functional layer.
A kind of three-dimensional storage, multiple grid layers including substrate, on the substrate run through the multiple grid layer
Channel hole and the functional layer in the channel hole, between the multiple grid layer is on the direction perpendicular to the substrate
Every arrangement；
The functional layer includes the barrier layer being arranged on the side wall of the channel hole；
The part grid layer has gate extension, and the gate extension extends to the blocking from the grid layer
Layer is internal.
Optionally, the channel hole includes interconnected multiple sub-channel holes；
The multiple sub-channel hole is arranged successively on the direction perpendicular to the substrate；
Grid layer with the gate extension is located at the intersection in the multiple sub-channel hole.
Optionally, the intersection in the sub-channel hole, only a grid layer have the gate extension.
Optionally, on the direction perpendicular to the substrate, the width of the gate extension is less than the grid layer
Width.
Optionally, on the extending direction of the grid layer, the length of the gate extension is less than two neighboring described
The length on the barrier layer of sub-channel hole intersection.
Optionally, the functional layer further includes into charge storage layer, tunnel layer and channel layer, the barrier layer, the electricity
Lotus accumulation layer, the tunnel layer and the channel layer are successively set on the side wall in the channel hole.
It optionally, further include the channel design for being located at channel hole bottom, the functional layer covers the channel design
Region have opening, with by it is described opening expose the channel design away from one side of substrate surface.
Compared with prior art, the technical scheme provided by the invention has the following advantages:
Three-dimensional storage provided by the present invention and preparation method thereof is carried out to the second nitration case on the side wall of channel hole
During oxidation, all the second nitration cases are not oxidized to barrier layer, but remains part and is formed in the first nitration case
On the second nitration case so that retain the second nitration case formed the first nitration case the first extension.
Since the second nitration case of reservation forms gate extension after the first extension is removed, reservation
Second nitration case will not influence the electric property of three-dimensional storage.That is, the present invention is not influencing three-dimensional storage electricity
In the case where learning performance, avoiding the second nitration case peroxidating causes the nitration case in stack layer to be oxidized, and then leads to channel
The excessive problem of the aperture size of film layer structure in hole.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of the schematic diagram of the section structure of three-dimensional storage provided by the invention；
Fig. 2 is a kind of flow chart of the production method of three-dimensional storage provided in an embodiment of the present invention；
Fig. 3 to Figure 10 is a kind of structure flow chart of three-dimensional storage provided in an embodiment of the present invention.
Specific embodiment
As described in background, the aperture of the film layer structure in existing channel hole is excessive, will affect three-dimensional storage
Electric property.Inventor needs first on the side wall of channel hole the study found that this is because when forming barrier layer in channel hole
Nitration case is formed, then oxidation is carried out to nitration case and forms oxide layer, still, during being aoxidized to nitration case, is easy
Lead to the nitration case peroxidating in stack layer, and then cause the aperture size of film layer structure in channel hole excessive, influences three-dimensional
The electric property of memory.
In particular by the channel hole that twice and more than twice etching technics is formed, as shown in Figure 1, being formed in each etching
The intersection in sub-channel hole can have turning, when forming nitration case 10 on the side wall of channel hole, will lead to the nitridation of corner
Layer 10 is blocked up, i.e. the length L of nitration case 10 in the horizontal direction is excessive, if this partial nitridation layer 10 of corner is all aoxidized
At oxide layer, 10 peroxidating of nitration case in other regions is inevitably resulted in, causes the nitration case 11 in stack layer to be oxidized, in turn
Cause the aperture CD of the film layer structure in channel hole oversized, influences the electric property of three-dimensional storage.
Based on this, the present invention provides a kind of production methods of three-dimensional storage, of the existing technology above-mentioned to overcome
Problem, comprising:
Substrate is provided, forms stack layer in the substrate surface and through the channel hole of the stack layer, the stacking
Layer includes the first oxide layer and the first nitration case that multilayer is arranged alternately；
The second nitration case is formed on the side wall in the channel hole, oxidation is carried out to second nitration case and forms blocking
Layer, and retain second nitration case that part is formed on first nitration case, wherein second nitration case retained
Form the first extension of first nitration case；
First nitration case and first extension in the stack layer are removed, and in first nitration case
Region forms grid layer, forms gate extension in the region of first extension, wherein the gate extension is from described
Grid layer extends to inside the barrier layer.
The present invention also provides a kind of three-dimensional storages, and multiple grid layers including substrate, on the substrate run through
The channel hole of the multiple grid layer and the functional layer in the channel hole, the multiple grid layer is perpendicular to described
It is alternatively arranged on the direction of substrate；
The functional layer includes the barrier layer being arranged on the side wall of the channel hole；
The part grid layer has gate extension, and the gate extension extends to the blocking from the grid layer
Layer is internal.
Three-dimensional storage provided by the invention and preparation method thereof is carrying out oxygen to the second nitration case on the side wall of channel hole
During change, all the second nitration cases are not oxidized to barrier layer, but remains part and is formed on the first nitration case
The second nitration case so that retain the second nitration case formed the first nitration case the first extension.
Since the second nitration case of reservation forms gate extension after the first extension is removed, reservation
Second nitration case will not influence the electric property of three-dimensional storage.That is, the present invention is not influencing three-dimensional storage electricity
In the case where learning performance, avoiding the second nitration case peroxidating causes the nitration case in stack layer to be oxidized, and then leads to channel
The excessive problem of the aperture size of film layer structure in hole.
It is core of the invention thought above, to keep the above objects, features and advantages of the present invention more obvious easily
Understand, following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of production methods of three-dimensional storage, as shown in Figure 2, comprising:
S1: providing substrate, forms stack layer in substrate surface and through the channel hole of stack layer, stack layer includes multilayer
The first oxide layer being arranged alternately and the first nitration case；
S2: forming the second nitration case on the side wall in channel hole, carries out oxidation to the second nitration case and forms blocking, and retains
Part is formed in the second nitration case on the first nitration case, wherein the first of the second nitration case the first nitration case of formation retained prolongs
Extending portion；
S3: the first nitration case and the first extension in removal stack layer, and grid is formed in the region of the first nitration case
Layer forms gate extension in the region of the first extension, wherein gate extension extends to inside barrier layer from grid layer.
With reference to the accompanying drawing 3 to Figure 10, the specific manufacturing process of three-dimensional storage is illustrated.
Substrate 1 is provided first, which is semiconductor substrate, is specifically as follows silicon substrate.
As shown in figure 3, forming the first sub- stack layer 20 on 1 surface of substrate, the first sub- stack layer 20 includes that multilayer is alternately arranged
The first oxide layer 201 and the first nitration case 202 of cloth.Wherein it is possible to set the first oxide layer 201 and first according to actual needs
The number of plies of nitration case 202.Optionally, the number of plies range of the first oxide layer 201 is 1-48, such as can be 5,10,20,30 or 40.
It is alternatively possible to form the first oxide layer by CVD (Chemical Vapor Deposition, chemical vapor deposition) technique
201 and first nitration case 202.It should be noted that the first nitration case 202 in the embodiment of the present invention includes but are not limited to nitrogen
SiClx layer, the first oxide layer 201 include but are not limited to silicon oxide layer.
Later, it as shown in figure 4, being performed etching to the first sub- stack layer 20, is formed through the first sub- stack layer 20 and is extended
To the first sub-channel hole 30 of substrate 1.It should be noted that being performed etching using etching solution to the first sub- stack layer 20
When, since etching solution does not have directionality, etching solution can also be carved while downward etching forms hole to two sides
Erosion, while the time of top etch can be longer than bottom, so that it is ideal square that the section in the first sub-channel hole 30 formed, which is not,
Shape structure, the channel hole top diameter for etching formation can be greater than base diameter, as shown in Figure 4.
It is formed after the first sub-channel hole 30, corrosion material to be etched is filled in the first sub-channel hole 30, when corrosion material to be etched
After filling up the first sub-channel hole 30, the second sub- stack layer 21 is formed on the first sub- stack layer 20, and in the first sub-channel hole 30
It is upper to form the second sub-channel hole 31 for running through the second sub- stack layer 21, as shown in Figure 5.Wherein, the second sub-channel is formed in etching
During hole 31, the corrosion material to be etched in the first sub-channel hole 30 can be also etched away.
It should be noted that the section in the second sub-channel hole 31 that etching is formed also is structure wide at the top and narrow at the bottom, it is based on this, is cut
After face is all the first sub-channel hole 30 of structure wide at the top and narrow at the bottom and the second sub-channel hole 31 stacks, the intersection of the two can shape
At to the turning of channel hole inner recess.
In the embodiment of the present invention, the sub- stack layer 20 of first be arranged successively on the direction Y perpendicular to substrate 1 and the second son
Stack layer 21 constitutes stack layer 2, the first sub-channel hole 30 for being arranged successively and being interconnected on the direction Y perpendicular to substrate 1
With 31 constituting channel hole 3 of the second sub-channel hole.Certainly, the present invention is not limited to this, in other embodiments, can form three
A and three or more sub- stack layers and sub-channel holes, and three and three or more sub- stack layers constitute stack layer 2, three and
Three or more sub-channel hole constituting channel holes 3, alternatively, in another embodiment, a sub- stack layer composition stack layer 2, one
A sub-channel hole constituting channel hole 3.
In addition, it should be noted that, 201 He of the first oxide layer that the second sub- stack layer 21 is equally arranged alternately including multilayer
First nitration case 202.Also, the film layer number of every sub- stack layer may be the same or different.That is, the second sub- heap
The number of plies range of lamination 21 is also possible to 1-48, such as 5,10,20,30 or 40.
That is, forming stack layer 2 on 1 surface of substrate and through the channel hole of stack layer 2 in the embodiment of the present invention
3 include:
The first sub- stack layer 20 and the second sub- stack layer 21 are formed on 1 surface of substrate, and is formed and runs through the first sub- stack layer
20 the first sub-channel hole 30 and through the second sub-channel hole 31 of the second sub- stack layer 21；Wherein, perpendicular to substrate 1
The sub- stack layer 20 of multiple first be arranged successively on the Y of direction and the second sub- stack layer 21 constitute stack layer 2, perpendicular to substrate 1
Direction Y on the 31 constituting channel hole 3 of multiple first sub-channels hole 30 and the second sub-channel hole that is arranged successively and is interconnected.
As shown in fig. 6, forming channel design 32 in 3 bottom of channel hole, and on 3 side wall of channel hole and channel design 32
The second nitration case 410 is formed, then the second nitration case 410 is aoxidized again, forming the second oxide layer 411 is barrier layer 41.
As shown in fig. 7, the embodiment of the present invention is during forming the second oxide layer 411, not to the second all nitration cases 410 into
Row oxidation, but retain a part of second nitration case 410, that is, retain the second nitridation that part is formed on the first nitration case 202
Layer 410, this part of second nitration case 410 of reservation form the first extension 220 of the first nitration case 202.
Later, as shown in figure 8, sequentially forming charge storage layer 42, tunnel on 41 side wall of barrier layer in 3 side wall of channel hole
Wear layer 43 and channel layer 44.Optionally, channel layer 44 is polysilicon layer, and tunnel layer 43 is silicon oxide layer, and charge storage layer 42 is
Silicon nitride layer, barrier layer 41 are that the second oxide layer 411 is silicon oxide layer.Later, retain 32 surface of channel design for being located at side wall
Barrier layer 41, charge storage layer 42, tunnel layer 43 and channel layer 44, removal be located at 32 surface of channel design barrier layer 41,
Charge storage layer 42, tunnel layer 43 and channel layer 44 expose channel design 32, i.e., cover the area of channel design 32 in functional layer 4
Domain forms opening, to expose the surface that channel design 32 deviates from 1 side of substrate.And filled layer is formed in the through-hole etched
45, which has the air gap 450.Wherein, the barrier layer 41 in channel hole 3, charge storage layer 42, tunnel layer 443,
Channel layer 44 and filled layer 45 constitute storage organization.
Later, as shown in figure 9, the first nitration case 202 and the first extension 220 in stack layer 2 are removed, such as Figure 10 institute
Show, form grid layer 5 in the region of the first nitration case 202, forms gate extension 50 in the region of the first extension 220,
In, the position of gate extension 50 is corresponding with the position of the first extension 220, and gate extension 50 is extended to from grid layer 5
Inside barrier layer 41.
Optionally, width of the gate extension 50 on the direction Y perpendicular to substrate 1 in the embodiment of the present invention is less than grid
Width of the pole layer 5 on the direction Y perpendicular to substrate 1, length of the gate extension 50 on 5 extending direction X of grid layer are less than
Length of the barrier layer 41 of two neighboring sub-channel hole intersection on 5 extending direction X of grid layer.
It should be noted that forming grid layer 5 and forming the process of gate extension 50 includes: in the first nitration case 202
Region and the first extension 220 region side wall on form metal oxide, then in the region of the first nitration case 202 and
Metal gate layers are formed in the region of first extension 220.Optionally, the material of metal oxide is aluminum oxide, metal
The material of grid layer is tungsten, and certainly, the present invention is not limited to this, in other embodiments, the material of metal gate layers
It can also be Ti etc..
In the embodiment of the present invention, during being aoxidized to the second nitration case 410 on 3 side wall of channel hole, not
All the second nitration cases 410 are oxidized to the second oxide layer 411, but remains part and is formed on the first nitration case 202
Second nitration case 410, so that the second nitration case 410 retained forms the first extension 220 of the first nitration case 202, after oxidation
The second nitration case 410 be the second oxide layer 411 formed barrier layer 41.
Since the second nitration case 410 of reservation is to form gate extension 50 after the first extension 220 is removed, because
This, the second nitration case 410 of reservation will not influence the electric property of three-dimensional storage.That is, in the embodiment of the present invention
In the case where not influencing three-dimensional storage electric property, 410 peroxidating of the second nitration case is avoided, is caused in stack layer 2
First nitration case 202 is oxidized, and then the problem for causing the aperture CD of film layer structure in channel hole 3 oversized.
In the embodiment of the present invention, when channel hole 3 is made of multiple sub-channel holes, i.e., channel hole 3 is using twice and two
When the formation of the secondary above etching technics, the intersection in sub-channel hole can have turning, form the second nitration case on the side wall of channel hole
When 410, the second nitration case 410 that will lead to corner is blocked up, i.e., the second nitration case 410 is in the thickness being parallel on 1 direction of substrate
It spends greatly, therefore, in order to avoid second nitration case of intersection, that is, corner 410 in sub-channel hole is oxidized completely, leads to it
Second nitration case, 410 peroxidating in his region, in the embodiment of the present invention, the part second for retaining the intersection in sub-channel hole is nitrogenized
Layer 410, that is, remain the first extension 220 of the intersection in sub-channel hole, and replace the first extension 220 in subsequent handling
It is changed to gate extension 50.
That is, in one embodiment of the invention, retaining the second nitrogen that part is formed on the first nitration case 202
Changing layer 410 includes: the second nitration case 410 on the first nitration case 202 for retain the intersection for being located at sub-channel hole.
Further, retain the second nitration case 410 packet being located on the first nitration case 202 of the intersection in sub-channel hole
It includes: retaining the second nitration case 410 being located on first nitration case 202 of the intersection in sub-channel hole.
Since the second nitration case 410 that sub-channel hole intersection retains is to form grid after the first extension 220 is removed
Pole extension 50, therefore, the second nitration case 410 that sub-channel hole intersection retains will not influence the electrical property of three-dimensional storage
Energy.That is, avoiding the friendship of sub-channel hole in the embodiment of the present invention in the case where not influencing three-dimensional storage electric property
Second nitration case, 410 peroxidating in other regions caused by 410 complete oxidation of the second nitration case at boundary, so as to avoid stacking
The first nitration case 202 in layer 2 is oxidized, and in other words, reduces the degree that the first nitration case 202 is oxidized, and then can subtract
The aperture CD size of film layer structure in small channel hole 3.
The embodiment of the invention provides a kind of three-dimensional storages, and as shown in Figure 10, which includes substrate 1, position
In multiple grid layers 5 on substrate 1, the functional layer 4 through the channel hole 3 of multiple grid layers 5 and in channel hole 3.
Wherein, functional layer 4 includes the barrier layer 41 being arranged on 3 side wall of channel hole；Part of grid pole layer 5 extends with grid
Portion 50, gate extension 50 extend to inside barrier layer 41 from grid layer 5.
In the embodiment of the present invention, during being aoxidized to the second nitration case 410 on 3 side wall of channel hole, not
All the second nitration cases 410 are oxidized to the second oxide layer 411, but remains part and is formed on the first nitration case 202
Second nitration case 410, so that the second nitration case 410 retained forms the first extension 220 of the first nitration case 202, after oxidation
The second nitration case 410 be the second oxide layer 411 formed barrier layer 41.
Since the second nitration case 410 of reservation is to form gate extension 50 after the first extension 220 is removed, because
This, the second nitration case 410 of reservation will not influence the electric property of three-dimensional storage.That is, in the embodiment of the present invention
In the case where not influencing three-dimensional storage electric property, 410 peroxidating of the second nitration case is avoided, is caused in stack layer 2
First nitration case 202 is oxidized, and then the problem for causing the aperture CD of film layer structure in channel hole 3 oversized.
As shown in Figure 10, functional layer 4 further includes charge storage layer 42, tunnel layer 43, channel layer 44 and filled layer 45,
In, barrier layer 41, charge storage layer 42, tunnel layer 43, channel layer 44 and filled layer 45 are successively set on 3 side wall of channel hole.
Optionally, channel layer 44 is polysilicon layer, and tunnel layer 43 is silicon oxide layer, and charge storage layer 42 is silicon nitride layer,
Barrier layer 41 is that the second oxide layer 411 is silicon oxide layer.Certainly, the present invention is not limited to this, in other embodiments, may be used also
To be made above-mentioned film layer of other materials.
In addition, 3 bottom of channel hole also has channel design 32, the region that functional layer 4 covers channel design 32 has opening,
To expose the surface that channel design 32 deviates from 1 side of substrate.
Optionally, in the embodiment of the present invention, channel hole 3 includes interconnected multiple sub-channel holes such as 30 and 31；It is described
Multiple sub-channel holes are arranged successively on the direction Y perpendicular to the substrate 1；Also, the grid with the gate extension 50
Pole layer 5 is located at the intersection in the sub-channel hole.Optionally, the intersection in the sub-channel hole, only a grid layer 5 have
The gate extension 50.
Optionally, width of the gate extension 50 on the direction Y perpendicular to substrate 1 in the embodiment of the present invention is less than grid
Width of the pole layer 5 on the direction Y perpendicular to substrate 1, length of the gate extension 50 on 5 extending direction X of grid layer are less than
Length of the barrier layer 41 of two neighboring sub-channel hole intersection on 5 extending direction X of grid layer.
Since the second nitration case 410 that sub-channel hole intersection retains is to form grid after the first extension 220 is removed
Pole extension 50, therefore, the second nitration case 410 that sub-channel hole intersection retains will not influence the electrical property of three-dimensional storage
Energy.That is, avoiding the friendship of sub-channel hole in the embodiment of the present invention in the case where not influencing three-dimensional storage electric property
Second nitration case, 410 peroxidating in other regions caused by 410 complete oxidation of the second nitration case at boundary, so as to avoid stacking
The first nitration case 202 in layer 2 is oxidized, and in other words, reduces the degree that the first nitration case 202 is oxidized, and then can subtract
The aperture CD size of film layer structure in small channel hole 3.
Optionally, length of the gate extension 50 on 5 extending direction X of grid layer is greater than 0, is less than 25nm, and grid extends
Length of the portion 50 on grid layer extending direction X is greater than 0, is less than 3nm, so that gate extension 50 is not influencing functional layer 4
In the case where interior charge storage layer 42, tunnel layer 43,44 performance of channel layer, reduce the film on the barrier layer 41 of sub-channel hole intersection
Thickness degree improves the electric property of three-dimensional storage to reduce the aperture of the film layer structure of sub-channel hole intersection.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (14)
1. a kind of production method of three-dimensional storage characterized by comprising
Substrate is provided, forms stack layer in the substrate surface and through the channel hole of the stack layer, the stack layer packet
Include the first oxide layer and the first nitration case that multilayer is arranged alternately；
The second nitration case is formed on the side wall in the channel hole, oxidation is carried out to second nitration case and forms barrier layer, and
Retain second nitration case that part is formed on first nitration case, wherein second nitration case retained forms institute
State the first extension of the first nitration case；
First nitration case and first extension in the stack layer are removed, and in the region of first nitration case
Grid layer is formed, forms gate extension in the region of first extension, wherein the gate extension is from the grid
Layer extends to inside the barrier layer.
2. the method according to claim 1, wherein forming stack layer in the substrate surface and through described
The channel hole of stack layer includes:
Sub- stack layer is formed in the substrate surface, and forms the sub-channel hole for running through the sub- stack layer；
Wherein, the multiple sub- stack layers being arranged successively on the direction perpendicular to the substrate constitute the stack layer,
Perpendicular to the multiple sub-channel holes compositions channel hole for being arranged successively and being interconnected on the direction of the substrate.
3. according to the method described in claim 2, it is characterized in that, retain part be formed in it is described on first nitration case
Second nitration case includes:
Retain second nitration case being located on first nitration case of the intersection in the sub-channel hole.
4. according to the method described in claim 4, it is characterized in that, retaining described the of the intersection for being located at the sub-channel hole
Second nitration case on one nitration case includes:
Retain second nitration case being located on first nitration case of the intersection in the sub-channel hole.
5. the method according to claim 1, wherein the grid prolongs on the direction perpendicular to the substrate
The width of extending portion is less than the width of the grid layer.
6. according to the method described in claim 2, it is characterized in that, the grid prolongs on the extending direction of the grid layer
The length of extending portion is less than the length on the barrier layer of two neighboring sub-channel hole intersection.
7. the method according to claim 1, wherein removing first nitration case and the institute in the stack layer
Before stating the first extension, further includes:
Charge storage layer, tunnel layer and channel layer, the barrier layer, the charge are successively formed on the side wall in the channel hole
Accumulation layer, the tunnel layer and the channel layer constitute functional layer.
8. a kind of three-dimensional storage, which is characterized in that multiple grid layers including substrate, on the substrate, through described
The channel hole of multiple grid layers and the functional layer in the channel hole, the multiple grid layer is perpendicular to the substrate
Direction on be alternatively arranged；
The functional layer includes the barrier layer being arranged on the side wall of the channel hole；
The part grid layer has gate extension, and the gate extension extends in the barrier layer from the grid layer
Portion.
9. three-dimensional storage according to claim 8, which is characterized in that the channel hole includes interconnected multiple sons
Channel hole；
The multiple sub-channel hole is arranged successively on the direction perpendicular to the substrate；
Grid layer with the gate extension is located at the intersection in the multiple sub-channel hole.
10. three-dimensional storage according to claim 9, which is characterized in that the intersection in the sub-channel hole, only one
Grid layer has the gate extension.
11. three-dimensional storage according to claim 8, which is characterized in that described on the direction perpendicular to the substrate
The width of gate extension is less than the width of the grid layer.
12. three-dimensional storage according to claim 9, which is characterized in that described on the extending direction of the grid layer
The length of gate extension is less than the length on the barrier layer of two neighboring sub-channel hole intersection.
13. three-dimensional storage according to claim 8, which is characterized in that the functional layer further include into charge storage layer,
Tunnel layer and channel layer, the barrier layer, the charge storage layer, the tunnel layer and the channel layer are successively set on described
On the side wall in channel hole.
14. three-dimensional storage according to claim 13, which is characterized in that further include positioned at the logical of channel hole bottom
Road structure, the region that the functional layer covers the channel design have opening, to expose the channel by the opening
Structure deviates from the surface of one side of substrate.
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