CN109385604A - One kind receives micro-dimension cermet material connection method - Google Patents
One kind receives micro-dimension cermet material connection method Download PDFInfo
- Publication number
- CN109385604A CN109385604A CN201811138318.0A CN201811138318A CN109385604A CN 109385604 A CN109385604 A CN 109385604A CN 201811138318 A CN201811138318 A CN 201811138318A CN 109385604 A CN109385604 A CN 109385604A
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- China
- Prior art keywords
- cermet
- ceramic
- binder
- connecting material
- connection
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 title claims abstract description 64
- 239000011195 cermet Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000011230 binding agent Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 239000002905 metal composite material Substances 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000002244 precipitate Substances 0.000 claims abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 239000002023 wood Substances 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 22
- 239000010410 layer Substances 0.000 abstract description 11
- 239000012790 adhesive layer Substances 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000005304 joining Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003032 molecular docking Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- -1 transition metal nitride Chemical class 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B11/00—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding
- F16B11/006—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding by gluing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Micro-dimension cermet material connection method is received the present invention relates to one kind.Binder is mixed with cermet material using physical gas phase deposition technology, prepares ceramic-metal composite；The above-mentioned ceramic-metal composite prepared is fit together with to connecting material, vacuum heat treatment is carried out to it；Binder will be from cermet be precipitate into and between connecting material, so that cermet be linked together with to connecting material after heat treatment in ceramic-metal composite.Binder can be migrated by the internal clearance of ceramic material to the surface of material, so that adhesive layer is automatically formed in ceramic material surfaces, so that metal ceramic-based composite material links together with to connecting material.Entire connection procedure is reaction environmental protection, safety, simple without in addition placing middle layer or binder in connecting material gap, and can complete to receive micro-dimension and wait for the connection of connecting material.
Description
Technical field
The technology of the present invention relates generally to the Primary Components such as electronics, medical treatment and machinery or system construction more particularly to one kind is received
Micro-dimension cermet material connection method.
Background technique
Ceramic general all have a good characteristics such as high temperature resistant, high hardness and corrosion resistance, elevated temperature strength height, and cermet material
Material is generally to be made of in recent years transition metal nitride (such as TiN, VN, TaN) using more one of ceramic material,
It is the critical material of the fields such as electronics, medical treatment, aviation and machinery exploitation new technology with more excellent performance.Ceramic material
Although having many advantages, such as above-mentioned, because its is crisp larger, the component of some specific structure shapes is difficult to pass through machining
Production.Therefore, being more widely applied with the material, in application fields such as electronic device, Medical Devices, there has been proposed
The problem of ceramic joining.Currently, the mainly active solder bonding metal connection, transition liquid-phase connection, hot pressing of ceramic to ceramic interconnection technique
Diffusion welding (DW) connection, reaction forming connection, hot pressing reaction joining process, SHS process connection, microwave connection etc..In electronics
Encapsulation field, medical instruments field often use small sized metallic ceramic joining, the ceramic joining technology developed at present
Generally it is related to middle layer and binder, most connection temperature used are higher.On the one hand, the selection of temperature is most important, temperature
Degree is too low to be unfavorable for ceramic joining, and temperature is too high to easily cause thermal stress concentration；On the other hand, currently used connection method by
It can not be carried out to the other material of microstage (such as circuit chip) is received in middle layer or bonding agent size and equipment size reason
Connection.Therefore, it is a kind of without be added in reaction middle layer or binder, suitable for receive micro-dimension cermet material, can be
Lower temperature realizes that the connection method of connection urgently proposes.
Summary of the invention
The purpose of the present invention is break through the connection temperature of the cermet device in existing electronics, medical treatment and machinery field or
Size limitation, develops a kind of novel non-pressure, the nano-micro scale connection method without filling (middle layer or binder), low temperature, it is desirable that
It reaches enough switching performances, and has the features such as easy to operate, at low cost, environmentally friendly, is easy to implement industrial production.
For this purpose, the present invention, which provides one kind, receives micro-dimension ceramic material interconnection technique.The technology has abandoned conventional method even
Middle layer or binder need to additionally be added when meeting cermet material (such as TiN, TaN, VN, WN), to need higher reaction
Temperature cannot connect the drawbacks of small-size materials very well, but binder is added to wait connect inside ceramic material in advance,
Low Temperature Heat Treatment promotes binder to be precipitated from material internal in utilizing when connection, completes connection.
The specific technical solution of the present invention is as follows:
A kind of connection type for receiving micro-dimension cermet material；Its step are as follows:
1) binder is mixed using physical gas phase deposition technology with cermet material, it is compound prepares cermet
Material；
2) the above-mentioned ceramic-metal composite prepared is fit together with to connecting material, Vacuum Heat is carried out to it
Processing；After heat treatment binder will from precipitateing into cermet in ceramic-metal composite and between connecting material, thus
Cermet is linked together with to connecting material.
The physical vapour deposition (PVD) includes magnetron sputtering method.
The preferred Ni metal of the cementitious additives, Au or Ag.
The ceramic based material preferred cermet TiN, TaN, VN or WN.
The heat treatment condition is preferably: 100-600 DEG C of temperature, soaking time 30-60min.
It is described as follows:
Binder is mixed with cermet material using physical gas phase deposition technology, it is compound to prepare ceramet group
Material；The composite material include binder 1 (Ni metal, Au, Ag etc.) and cermet material 2 in Fig. 1 (cermet such as TiN,
TaN, VN, WN etc.)；Wherein, binder 1 is not reacted with cermet material 2, and binder 1 does not influence ceramic based material 2
Structure；
The above-mentioned metal ceramic-based composite material prepared is fit together with material to be connect, vacuum is carried out to it
It is heat-treated (heat treatment temperature is about 100-600 DEG C, soaking time 30-60min).Binder will be answered from cermet after heat treatment
Cermet is precipitate into condensation material and between connecting material, so that cermet be linked together with to connecting material.
Without in addition placing middle layer and binder in connecting material gap.
Connection method of the invention, under the conditions of vacuum heat treatment, binder 1 can pass through the internal clearance of ceramic material 2
Migrate to the surface of material, to automatically form adhesive layer in ceramic material surfaces so that metal ceramic-based composite material with
It links together to connecting material.In addition entire connection procedure is without placing middle layer or bonding in connecting material gap
Agent, it is reaction environmental protection, safety, simple, and can complete to receive micro-dimension and wait for the connection of connecting material.
Detailed description of the invention
To be provided in an embodiment of the present invention metal pottery is added using physical vaporous deposition (magnetron sputtering) in binder by Fig. 1
Schematic diagram (a) in porcelain and the composite structure schematic diagram (b) after binder is added.
Fig. 2 is that connection procedure is intended in the embodiment of the present invention.
Fig. 3 is connection effect schematic diagram in the embodiment of the present invention.
Fig. 4 is schematic diagram after specific embodiment same metal ceramic material TaN connection.
Fig. 5 is schematic diagram after specific embodiment dissimilar metal ceramic material TaN, TiN connection.
Fig. 6 is pictorial diagram after specific embodiment same metal ceramic material TiN connection.
1-soft metal binder, such as Cu, Ag, Au, 2-transition metal ceramic materials, such as TiN, TaN, VN
Specific embodiment
The embodiment of the present invention will be described in further detail below:
As shown in Fig. 1 (a), the embodiment of the invention provides added binder using physical vaporous deposition (magnetron sputtering)
Enter wait connect the schematic diagram in ceramic material；Binder 1 is fixed on transmitting target, top turntable will be fixed on to connecting material
On, it is passed through argon gas/nitrogen in vacuum chamber, argon gas/nitrogen is ionized under forceful electric power field action, makes its ion bombardment binder target
Material makes to bond agent molecule into ceramic material 2 to be connected, forms the composite material as shown in figure (b).The composite material is by ceramics
Material 2 and binder 1 (Ni metal, Au, Ag etc.) form；Ceramic material 2 is not reacted with cementitious additives 1, and binder 1 is distributed in
2 gap of ceramic material, and the structure of ceramic material 2 is not influenced.
As shown in Fig. 2, the ceramic material containing binder is docking together, it is heated to certain temperature under vacuum conditions
(100-600 DEG C), binder 1 is migrated to contact surface by the internal clearance of ceramic material 2 and is gradually filled out in heating process
Full gap, forms class middle layer/binder, to realize of the same race or xenogenesis ceramic based material connection, effect is as shown in Figure 3.
Specific embodiment:
Binder Ag is added to TaN material internal using magnetron sputtering method and forms TaN-Ag material by embodiment 1..Wherein
TaN is ceramic material to be connected, and the plate type thin film resistor being usually used in medical electronics needs small size to connect, and Ag is
Metal cementitious additives.When connection, the docking of two panels TaN-Ag composite material is placed on integrated circuit and waits for link position, is put into true
400 DEG C of vacuum heat treatment, soaking time 30min are carried out in empty heat-treatment furnace.As shown in figure 4, two blocks of TaN materials are in binder
Connection is realized under the action of Ag, by test, reaches requirement.
Binder Cu is added separately to be formed inside TaN and TiN ceramic material by embodiment 2. using magnetron sputtering method
TaN-Cu and TiN-Cu composite material, resistor that wherein TaN is usually used in integrated circuit, TiN are usually used in circuit board titanium slot material
Material.When connection, the material prepared docking is placed in vacuum heat treatment furnace, is 600 DEG C by temperature setting, soaking time
50min.As shown in figure 5, cermet TiN and TaN is connected with each other under the action of binder Cu, by test, can achieve
Requirement.
Binder Cu is added to TiN device inside using magnetron sputtering method and forms TiN-Cu material by embodiment 3., wherein
TiN is same metal ceramic material to be connected, and the soft metal Cu binder places two material docking in vacuum heat treatment furnace,
100 DEG C are warming up to, soaking time 60min Cu is migrated from connecting material to material surface, is formed middle layer/binder, is such as schemed
Shown in 6, the connection between metal TiN is usually used in wiring board connection.
Entire reaction is not necessarily to extra pressure and hot environment, influences on connected body structure small.The technology of the present invention can connect
The cermet material received under micro-dimension is more suitable for that the connection of middle layer/binder material can not be filled.
The novel protection scope of the above, novel preferable specific embodiment only of the invention, but the present invention is not
It is confined to this, anyone skilled in the art can readily occur in the technical scope of the novel disclosure of the present invention
Change or replacement, should all cover within the novel protection scope of the present invention.Therefore, the novel protection scope of the present invention should
Subject to the scope of protection of the claims.
Claims (5)
1. a kind of connection type for receiving micro-dimension cermet material；It is characterized in that steps are as follows:
1) binder is mixed using physical gas phase deposition technology with cermet material, prepares cermet composite wood
Material；
2) the above-mentioned ceramic-metal composite prepared is fit together with to connecting material, it is carried out at Vacuum Heat
Reason；Binder will be from cermet be precipitate into and between connecting material, thus will after heat treatment in ceramic-metal composite
Cermet links together with to connecting material.
2. the method as described in claim 1, it is characterized in that physical vapour deposition (PVD) includes magnetron sputtering method.
3. the method as described in claim 1, it is characterized in that cementitious additives include Ni metal, Au or Ag.
4. the method as described in claim 1, it is characterized in that ceramic based material includes cermet TiN, TaN, VN or WN.
5. the method as described in claim 1, it is characterized in that heat treatment condition is: 100-600 DEG C of temperature, soaking time 30-
60min。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811138318.0A CN109385604A (en) | 2018-09-28 | 2018-09-28 | One kind receives micro-dimension cermet material connection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811138318.0A CN109385604A (en) | 2018-09-28 | 2018-09-28 | One kind receives micro-dimension cermet material connection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109385604A true CN109385604A (en) | 2019-02-26 |
Family
ID=65418208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811138318.0A Pending CN109385604A (en) | 2018-09-28 | 2018-09-28 | One kind receives micro-dimension cermet material connection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109385604A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101003901A (en) * | 2006-09-12 | 2007-07-25 | 宁波浙东精密铸造有限公司 | Composite material of metal / ceramic metal, manufacturing method and application |
| CN103274715A (en) * | 2013-06-07 | 2013-09-04 | 哈尔滨工业大学 | Low-temperature active diffusion connecting method of interstitial carbide or nitride ceramic based on high temperature application |
| CN107488044A (en) * | 2016-06-12 | 2017-12-19 | 中国科学院宁波材料技术与工程研究所 | The method of silicon carbide ceramics connecting material and connection silicon carbide ceramics with highly corrosion resistant |
-
2018
- 2018-09-28 CN CN201811138318.0A patent/CN109385604A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101003901A (en) * | 2006-09-12 | 2007-07-25 | 宁波浙东精密铸造有限公司 | Composite material of metal / ceramic metal, manufacturing method and application |
| CN103274715A (en) * | 2013-06-07 | 2013-09-04 | 哈尔滨工业大学 | Low-temperature active diffusion connecting method of interstitial carbide or nitride ceramic based on high temperature application |
| CN107488044A (en) * | 2016-06-12 | 2017-12-19 | 中国科学院宁波材料技术与工程研究所 | The method of silicon carbide ceramics connecting material and connection silicon carbide ceramics with highly corrosion resistant |
Non-Patent Citations (7)
| Title |
|---|
| C.P. MULLIGAN .ET.AL: ""Ag transport in CrN-Ag nanocomposite coatings"", 《THIN SOLID FILMS》 * |
| 刘宜汉主编，杨洪波副主编: "《金属陶瓷材料制备与应用[M]》", 31 March 2012 * |
| 张济忠，胡平，杨思泽等编著: "《现代薄膜技术》", 31 January 2009 * |
| 张济忠等: "《1994秋季中国材料研讨会论文集 第4卷 材料加工和研究新技术[M]》", 30 June 1995 * |
| 曲敬信，汪泓宏主编: "《表面工程手册》", 31 March 1998 * |
| 朱敏: "《工程材料[M]》", 28 February 2018 * |
| 蒋鸿辉主编: "《材料化学和无机非金属材料实验教程[M]》", 30 May 2018 * |
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