CN109384191B - Electric heating micro-driver for inhibiting temperature rise of displacement output end - Google Patents
Electric heating micro-driver for inhibiting temperature rise of displacement output end Download PDFInfo
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- CN109384191B CN109384191B CN201811126939.7A CN201811126939A CN109384191B CN 109384191 B CN109384191 B CN 109384191B CN 201811126939 A CN201811126939 A CN 201811126939A CN 109384191 B CN109384191 B CN 109384191B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0024—Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0081—Thermal properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/031—Thermal actuators
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Abstract
The invention discloses an electrothermal microactuator for inhibiting temperature rise of a displacement output end, which comprises a shuttle plate beam, wherein driving beam arrays are symmetrically connected to two sides of the shuttle plate beam, the end surface of the other side of each driving beam array is an anchor point I, a driving electrode is deposited on each anchor point I, a shuttle plate beam electrode film is deposited on the shuttle plate beam, and the length of the shuttle plate beam in the horizontal direction is more than or equal to one third of the length of the driving beam array in the horizontal direction. A thermal resistor is arranged between the shuttle plate beam and the displacement output terminal, the thermal resistor is a long and thin beam along the driving displacement direction, both sides of the tail end of the thermal resistor are connected with heat sinks, the outer ends of the heat sinks are connected with anchor points II, and the heat sinks are square-wave or S-shaped flexible beams. Compared with the prior art, the temperature rise of the displacement output end can be effectively reduced, the output displacement of the electrothermal driver can be increased under the same temperature rise, and the temperature rise of the displacement output terminal is small under the condition that the rigidity of the driver in the driving direction is increased slightly.
Description
Technical Field
The invention belongs to the technical field of micro-driving in a micro-electro-mechanical system, and particularly relates to an electrothermal micro-driver for restraining temperature rise of a displacement output end aiming at a V-shaped and Z-shaped electrothermal driver.
Background
The micro-electro-thermal driving is a displacement type driving which utilizes joule heat and thermal expansion effect to deform a driving beam, has the advantages of compact structure, low driving voltage, easy integration and large output force, and is one of the most common driving methods in the technical field of MEMS. The micro-electrothermal drive is applied to the fields of micro-actuators/micro-mechanical switches/micro-nano mechanical tests and the like, and the micro-electrothermal drivers capable of realizing in-plane motion comprise U-shaped, V-shaped and Z-shaped electrothermal drivers, wherein the U-shaped electrothermal drivers realize in-plane circular motion by utilizing cold and hot arms, and the V-shaped and Z-shaped electrothermal drivers realize in-plane linear motion by utilizing a symmetrical structural form. The present invention is directed to V-type and Z-type electro-thermal drivers.
At present, for V-type and Z-type electrothermal drivers, the length of the shuttle beam along the direction perpendicular to the displacement output shaft of the driver is far less than the length from the inner side of the anchor point i to the shuttle beam along the drive beam on the drive beam array, and the design of the electrothermal drivers mainly focuses on the optimization of the maximum displacement and the load capacity of the output, and little attention is paid to the temperature rise limiting requirement of the electrothermal drivers. The disadvantage of this kind of electrothermal driver is that there is a lot of heat flow in it, the temperature rise of displacement output end is high, because the driven sample is directly connected with the displacement output end, the temperature of the driven sample is affected, and the application of electrothermal driver in the driven sample with physical temperature sensitivity is limited.
In order to reduce the influence of the displacement output end of the electrothermal drive on the driven sample, the current main method is to arrange a heat source isolation structure between the displacement output end of the electrothermal drive and the driven sample. The existing heat source isolation methods include the following methods: firstly, a thermal isolation groove with a heat insulation layer covered on the side wall is adopted, the process difficulty of the mode is high, and the process compatibility with an on-chip driving unit and a detection unit is poor; secondly, the heat dissipation is accelerated through the heat sink structure, and the mode can better control the temperature field distribution from the displacement output end of the electric heating drive to the driven sample through the heat sink, so that the defects that the temperature of a V-shaped or Z-shaped driving beam is reduced due to the existence of the heat sink, the driving displacement is reduced, and the overall rigidity of the electric heating driver is improved; thirdly, the thermal resistance and the heat sink are adopted simultaneously, the method has the advantages that the heat loss of the electrothermal driver is small, but the thin and long heat sink increases the use area and increases the instability.
Disclosure of Invention
In order to solve the problems of the existing method for inhibiting the temperature rise of the displacement output end, the invention provides the electrothermal micro-driver for inhibiting the temperature rise of the displacement output end, which can optimize the temperature field distribution of the micro-electrothermal driver, so that the temperature rise is concentrated in a V-shaped or Z-shaped driving beam determining the output displacement, and the temperature rise of a shuttle plate beam where the displacement output is positioned is as small as possible, thereby inhibiting the temperature rise of the displacement output end of the electrothermal micro-driver; in addition, a novel thermal resistance is additionally arranged between the displacement output end and the driven sample, and the temperature reduction gradient of the driven sample is increased.
The object of the invention is achieved in the following way:
the electrothermal microactuator for inhibiting the temperature rise of the displacement output end comprises a shuttle plate beam 2, wherein driving beam arrays 3 are symmetrically connected to two sides of the shuttle plate beam 2, the end face of the other side of each driving beam array 3 is an anchor point I4, a driving electrode 5 is deposited on each anchor point I4, a film of a shuttle plate beam electrode 1 is deposited on the shuttle plate beam 2, and the length of the shuttle plate beam 2 in the direction perpendicular to the displacement output shaft of the actuator is larger than or equal to one third of the length of the driving beam array 3 from the inner side of each anchor point I4 to the shuttle plate beam 2.
A thermal resistance I10 is arranged between the shuttle plate beam 2 and the displacement output terminal, the thermal resistance I10 is a long and thin beam along the driving displacement direction, both sides of the tail end of the thermal resistance I10 are connected with heat sinks 11, the outer ends of the heat sinks 11 are connected with anchor points II 15, and the heat sinks 11 are square-wave or S-shaped flexible beams.
A thermal resistance II 12 is arranged between the shuttle plate beam 2 and the displacement output terminal, the thermal resistance II 12 is a slender beam along the driving displacement direction, both sides of the tail end of the thermal resistance II 12 are connected with heat sinks 11, the outer ends of the heat sinks 11 are connected with anchor points II 15, and the heat sinks 11 are square-wave or S-shaped flexible beams; the thermal resistance II 12 is composed of a structural layer II 1201 and an insulating isolation groove 1202, and the structural layer II 1201 and the insulating isolation groove 1202 are distributed at intervals along the driving displacement direction.
A thermal isolation shuttle plate 13 is arranged below the shuttle plate beam 2, the thermal isolation shuttle plate 13 extends out along the shuttle plate beam 2 in the driving displacement direction, the extending end of the thermal isolation shuttle plate is connected with a thermal resistor III 14, the thermal resistor III 14 is integrally a slender beam in the driving displacement direction, both sides of the tail end of the thermal resistor III 14 are connected with a heat sink 11, the outer end of the heat sink 11 is connected with an anchor point II 15, and the heat sink 11 is a square-wave type or S-type flexible beam; the upper layer of the thermal isolation shuttle plate 13 is an electrical insulation oxidation isolation layer II 1301, the lower layer is a base layer III 1302, the thermal resistance III 14 comprises at least two structural layers III 1401, an electrical insulation oxidation isolation layer III 1402 is connected between the adjacent structural layers III 1401, two ends of the electrical insulation oxidation isolation layer III 1402 are respectively positioned below the adjacent structural layers III 1401, and the base layer II 1403 is tightly attached to the position right below the electrical insulation oxidation isolation layer III 1402.
The two shuttle plate beams 2 are positioned at two sides of the thermal isolation shuttle plate 13 and extend out towards the two sides, and the extending ends are connected with the driving beam array 3.
The number of the shuttle plate beam electrodes 1 is one.
Two shuttle plate beam electrodes 1 are arranged, wherein one shuttle plate beam electrode is positioned at one side of the shuttle plate beam 2 and is close to the driving beam array 3 at the same side; and the other is positioned at the other side of the shuttle plate beam 2 and is close to the driving beam array 3 at the same side.
The number of the driving beams in the driving beam array 3 on one side of the shuttle plate beam 2 is odd, and the anchor point I4 and the driving electrode 5 on the same side are both one.
The number of the driving beams in the driving beam array 3 on one side of the shuttle plate beam 2 is even, and one or two of the anchor points I4 and the driving electrodes 5 on the same side are provided.
Compared with the prior art, the invention has the following advantages:
1. an electrode film is deposited on the upper surface of the shuttle plate beam structure layer, and as the resistivity of the electrode film is far smaller than that of the structure layer, the Joule heat generated by the shuttle plate beam in unit volume is far smaller than that of the driving beam, so that the temperature rise of the displacement output end is reduced;
2. the micro electro-thermal driver is designed to have a larger shuttle plate beam width, on one hand, the heat transferred to the surrounding air through the upper surface of the shuttle plate beam or transferred to the substrate layer through the lower surface of the shuttle plate beam is increased to accelerate the heat dissipation, and on the other hand, the micro electro-thermal driver composed of the shuttle plate beam with a larger width has a larger output displacement under the condition that the shuttle plate beams have the same temperature rise;
3. the thermal resistance and the heat sink with special structures are additionally arranged between the shuttle plate beam and the displacement output terminal, and the thermal resistance and the heat sink have the function of concentrating joule heat at the electric heating driving beam so that the output displacement of the electric heating driver under the same driving power is larger; the heat sink minimizes the temperature rise of the displacement output terminal, and minimizes the rigidity of the driving displacement direction increased by the presence of the heat sink by making the heat sink in a square wave shape, an S-shape, or the like.
In summary, the invention can reduce the temperature rise of the shuttle plate beam and increase the output displacement of the electrothermal driver under the same temperature rise, and the temperature rise of the displacement output terminal is small under the condition that the rigidity of the driver in the driving direction is increased very little.
Drawings
Fig. 1 is a schematic structural view of example 1 of the present invention using a surface micromachining process.
Fig. 2 is a sectional view of the bottom view of fig. 1.
Fig. 3 is a cross-sectional view of a bulk micromachining process according to embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of embodiment 2 of the present invention.
Fig. 5 is a schematic structural diagram of embodiment 3 of the present invention.
Fig. 6 is a schematic structural diagram of embodiment 4 of the present invention.
Fig. 7 is a schematic structural view of embodiment 5 of the present invention.
Wherein 1 is a shuttle plate beam electrode; 2 is a shuttle plate beam; 3 is a drive beam array; 4 is anchor point I; 5 is a drive electrode; 6 is an electrode thin film layer; 7 is a structural layer I; 8 is an electrically insulating oxide isolation layer I; 9 is a substrate layer I; 10 is the thermal resistance I; 11 is a heat sink; 12 is a thermal resistance II, 1201 is a structural layer II, and 1202 is an insulating isolation groove; 13 is a thermal isolation shuttle plate, 1301 is an electrical insulation oxidation isolation layer II, 1302 is a base layer III; 14 is thermal resistance III, 1401 is structural layer III, 1402 is electrically insulating oxide isolation layer III, 1403 is base layer II; and 15 is an anchor point II.
Detailed Description
Example 1
As shown in fig. 1-3, the electrothermal microactuator for suppressing temperature rise at the displacement output end comprises a shuttle plate beam 2, wherein driving beam arrays 3 are symmetrically connected to two sides of the shuttle plate beam 2, the end surface of the other side of the driving beam array 3 is an anchor point i 4, a driving electrode 5 is deposited on the anchor point i 4, a film of the shuttle plate beam electrode 1 is deposited on the shuttle plate beam 2, and the length of the shuttle plate beam 2 in the direction perpendicular to the displacement output shaft of the actuator is greater than or equal to one third of the length from the inner side of the anchor point i 4 to the shuttle plate beam 2 along the driving beam on the driving beam array 3. The length of the shuttle plate beam 2 of the present invention is large compared to the length of the shuttle plate beam 2 of the prior art. In this embodiment 1, the number of the driving beams in the driving beam array 3 is four, and the anchor point i 4 and the driving electrode 5 on the same side are both one.
The whole electric heating micro-actuator is composed of four layers of materials, namely an electrode thin film layer 6, a structural layer I7, an electric insulation oxidation isolation layer I8 and a substrate layer I9 from top to bottom; the structure of the embodiment 1 manufactured by the bulk micromachining process is shown in fig. 2, the structure of the embodiment 1 manufactured by the surface micromachining process is shown in fig. 3, and a structural layer i 7 is divided into a shuttle plate beam 2 positioned in the middle, anchor points i 4 positioned at two ends and drive beam arrays 3 at two sides of the shuttle plate beam 2 according to functional purposes; the electrode thin film layer 6 is divided into two parts according to whether the lead is connected or not: the driving electrodes 5 at both ends are used as electrode leads, and the shuttle plate beam electrode 1 at the middle part is not used for leading.
The driving beam array 3 is connected with the anchor point I4 and forms a certain inclination angle with the vertical direction of driving displacement, and as shown in fig. 1 and 2, four-layer structures on two sides of the shuttle plate beam 2 are symmetrical about a driving displacement axis; the method is characterized in that a driven sample is arranged in front of or behind the shuttle plate beam 2, when the driven sample is positioned in front of the shuttle plate beam 2, the driven sample moves towards the upper part of the shuttle plate beam 2 in figure 1, otherwise, the driven sample moves towards the opposite direction, and the method is the prior art.
The shuttle plate beam electrode 1 is one and covers the upper surface of the shuttle plate beam 2.
When the electric heating actuator of embodiment 1 works, a positive driving voltage and a negative driving voltage are respectively applied to the two driving electrodes 5, on one hand, the driving beam array 3 generates joule heat, which causes thermal expansion and lengthens to drive the shuttle beam 2 to move in the driving displacement direction, on the other hand, the shuttle beam 2 also generates joule heat, but since the film of the shuttle beam electrode 1 is deposited on the upper surface of the shuttle beam 2, the shuttle beam 2 is made of a structural layer material, and the resistivity of the film of the shuttle beam electrode 1 is much smaller than that of the structural layer, the joule heat generated per unit volume at the shuttle beam 2 is much smaller than that generated per unit volume at the driving beam, and the shuttle beam 2 has a larger width, i.e. a larger heat dissipation area, so that the temperature rise at the shuttle beam 2 can be suppressed, in addition, the shuttle beam 2 has a larger width, and the shuttle beam 2 has a larger output displacement caused by the thermal deformation generated by the shuttle beam with a larger width dimension at the same temperature rise, therefore, the temperature rise at the shuttle beam 2 is suppressed without affecting the output displacement of the actuator.
Example 2
As shown in fig. 4, unlike embodiment 1:
1. two shuttle plate beam electrodes 1 are arranged, wherein one shuttle plate beam electrode is positioned at one side of the shuttle plate beam 2 and is close to the driving beam array 3 at the same side; and the other is positioned at the other side of the shuttle plate beam 2 and is close to the driving beam array 3 at the same side.
2. The number of the driving beams in the driving beam array 3 on one side of the shuttle plate beam 2 is an even number, the anchor points I4 and the driving electrodes 5 on the same side are both two, and the driving beam array 3 with the even number is divided into two parts which are respectively connected to the two anchor points I4. When the driving device works, positive driving voltage and negative driving voltage are respectively applied to the two driving electrodes 5 on one side of the shuttle plate beam 2, and positive driving voltage and negative driving voltage are respectively applied to the two driving electrodes 5 on the other side.
Of course, the number of the driving beams in the driving beam array 3 on one side of the shuttle beam 2 is even, and the anchor point i 4 and the driving electrode 5 on the same side can be both one. The number of the driving beams in the driving beam array 3 on one side of the shuttle plate beam 2 is odd, and the anchor point I4 and the driving electrode 5 on the same side are both one and only one. The present embodiment 2 can be manufactured by using either a surface micromachining process or a bulk micromachining process.
When the actuator of this embodiment 2 operates, the process is the same as that of embodiment 1, except that the temperature rise of the displacement output end is better suppressed in embodiment 2, because the two shuttle beam electrodes 1 are close to the driving beam array 3 on the same side, the current flows through the shuttle beam electrode 1 and the part of the shuttle beam 2 below the shuttle beam electrode 1, and no joule heat is generated in the middle part of the shuttle beam 2.
Example 3
As shown in fig. 5, unlike embodiment 2: a thermal resistance I10 is arranged between the shuttle plate beam 2 and the displacement output terminal, the thermal resistance I10 is a long and thin beam along the driving displacement direction, both sides of the tail end of the thermal resistance I10 are connected with heat sinks 11, the outer ends of the heat sinks 11 are connected with anchor points II 15, the heat sinks 11 are square wave type or S-shaped flexible beams, the rigidity coefficient of the heat sinks 11 in the driving displacement direction is reduced, and the square wave type means that the corners in the S-shaped flexible beams are all arranged to be right angles. The thermal resistance I10 is composed of a structural layer material, and the heat sink 11 can be composed of the structural layer material alone or composed of the structural layer material, an electrical insulation oxidation isolation layer material and part of a base layer material. The present embodiment 3 can be manufactured by using a surface micromachining process or a bulk micromachining process.
When the driver of the embodiment 3 works, the effect is better than that of the embodiment 2, because the heat on the shuttle plate beam 2 can form a longer cooling gradient through the slender thermal resistance I10, the temperature of the output end is raised and lowered to the minimum, and the rigidity of the displacement output end is lowered to the minimum through the square wave type or S-shaped heat sink 11.
Example 4
As shown in fig. 6, unlike embodiment 2: a thermal resistance II 12 is arranged between the shuttle plate beam 2 and the displacement output terminal, the thermal resistance II 12 is a slender beam along the driving displacement direction, both sides of the tail end of the thermal resistance II 12 are connected with heat sinks 11, the outer ends of the heat sinks 11 are connected with anchor points II 15, the heat sinks 11 are square wave type or S-shaped flexible beams, so that the rigidity coefficient of the heat sinks in the driving displacement direction is reduced, wherein the square wave type means that the corners in the S-shaped flexible beams are all arranged at right angles; the thermal resistance II 12 is composed of a structural layer II 1201 and an insulating isolation groove 1202, and the structural layer II 1201 and the insulating isolation groove 1202 are distributed at intervals along the driving displacement direction.
The heat sink 11 may be formed of a structural layer material alone, or may be formed of a structural layer material, an electrically insulating oxide spacer material, and a portion of a base layer material. This embodiment 4 can be manufactured by using either surface micromachining or bulk micromachining.
When the driver of this embodiment 4 works, the effect is better than that of embodiment 2, because the heat on the shuttle plate beam 2 can form a longer cooling gradient through the elongated thermal resistance ii 12, the temperature rise and fall of the output end is minimized, and the arrangement of the thermal insulation isolation groove 1202 further reduces the transmission of the temperature rise of the output end, and the rigidity of the displacement output end is minimized through the square wave type or S-type heat sink 11.
Example 5
As shown in fig. 7, unlike embodiment 2:
1. a thermal isolation shuttle plate 13 is arranged below the shuttle plate beam 2, the thermal isolation shuttle plate 13 extends out along the shuttle plate beam 2 in the driving displacement direction, the extending end of the thermal isolation shuttle plate is connected with a thermal resistor III 14, the thermal resistor III 14 is integrally a slender beam in the driving displacement direction, both sides of the tail end of the thermal resistor III 14 are connected with a heat sink 11 (not shown in figure 7), the outer end of the heat sink 11 is connected with an anchor point II 15 (not shown in figure 7), and the heat sink 11 is a square-wave or S-shaped flexible beam; the upper layer of the thermal isolation shuttle plate 13 is an electrical insulation oxidation isolation layer II 1301, the lower layer is a base layer III 1302, the thermal resistance III 14 comprises at least two structural layers III 1401, an electrical insulation oxidation isolation layer III 1402 is connected between the adjacent structural layers III 1401, two ends of the electrical insulation oxidation isolation layer III 1402 are respectively positioned below the adjacent structural layers III 1401, and the base layer II 1403 is tightly attached to the position right below the electrical insulation oxidation isolation layer III 1402.
2. The two shuttle plate beams 2 are positioned at two sides of the thermal isolation shuttle plate 13 and extend out towards the two sides, and the extending ends are connected with the driving beam array 3.
In FIG. 7, the heat sink 11 is connected to both sides of the structural layer III 1401 at the end of the thermal resistance III 14, and the arrangement of the heat sink 11 and the anchor point II 15 is the same as that in FIG. 6. The electrothermal actuator of the embodiment 5 can be processed only by the bulk micromachining process, and cannot be processed by the surface micromachining process.
The driver of this embodiment 5 is superior to that of embodiment 2 in its operation, because the thermal isolation shuttle 13 well inhibits the temperature rise of the shuttle beam 2 from being transferred to the displacement output terminal, and the structure of the thermal resistance iii 14 further increases the temperature gradient of the displacement output terminal, and the rigidity of the displacement output terminal is minimized by the square wave type or S type heat sink 11.
In addition to the above-described embodiments 1 to 5, all the technical features of the present invention can be recombined to form other embodiments without contradiction.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the overall concept of the invention, and these should be considered as the protection scope of the present invention, which will not affect the effect of the implementation of the present invention and the practicability of the patent.
Claims (9)
1. Restrain electric heat micro actuator of displacement output temperature rise, including shuttle board roof beam (2), shuttle board roof beam (2) bilateral symmetry is connected with drive beam array (3), and drive beam array (3) another side end face is anchor point I (4), and the deposit has drive electrode (5), its characterized in that on anchor point I (4): and a film of the shuttle plate beam electrode (1) is deposited on the shuttle plate beam (2), and the length of the shuttle plate beam (2) along the direction vertical to the displacement output shaft of the driver is greater than or equal to one third of the length of the driving beam array (3) from the inner side of the anchor point I (4) to the shuttle plate beam (2).
2. The electrothermal microactuator of claim 1 wherein: a thermal resistor I (10) is arranged between the shuttle plate beam (2) and the displacement output terminal, the thermal resistor I (10) is a long and thin beam along the driving displacement direction, both sides of the tail end of the thermal resistor I (10) are connected with a heat sink (11), the outer end of the heat sink (11) is connected with an anchor point II (15), and the heat sink (11) is a square-wave or S-shaped flexible beam.
3. The electrothermal microactuator of claim 1 wherein: a thermal resistor II (12) is arranged between the shuttle plate beam (2) and the displacement output terminal, the thermal resistor II (12) is a slender beam along the driving displacement direction, both sides of the tail end of the thermal resistor II (12) are connected with heat sinks (11), the outer ends of the heat sinks (11) are connected with anchor points II (15), and the heat sinks (11) are square-wave or S-shaped flexible beams; the thermal resistance II (12) is composed of a structural layer II (1201) and an insulating isolation groove (1202), and the structural layer II (1201) and the insulating isolation groove (1202) are distributed at intervals along the driving displacement direction.
4. The electrothermal microactuator of claim 1 wherein: a thermal isolation shuttle plate (13) is arranged below the shuttle plate beam (2), the thermal isolation shuttle plate (13) extends out along the shuttle plate beam (2) in the driving displacement direction, the extending end of the thermal isolation shuttle plate is connected with a thermal resistor III (14), the thermal resistor III (14) is integrally a slender beam in the driving displacement direction, heat sinks (11) are connected to two sides of the tail end of the thermal resistor III (14), the outer end of each heat sink (11) is connected with an anchor point II (15), and each heat sink (11) is a square-wave or S-shaped flexible beam; the thermal insulation shuttle plate (13) is characterized in that the upper layer is an electrical insulation oxidation isolation layer II (1301), the lower layer is a base layer III (1302), the thermal resistance III (14) comprises at least two structural layers III (1401), an electrical insulation oxidation isolation layer III (1402) is connected between the adjacent structural layers III (1401), two ends of the electrical insulation oxidation isolation layer III (1402) are respectively located below the adjacent structural layers III (1401), and the base layer II (1403) is tightly attached to the position right below the electrical insulation oxidation isolation layer III (1402).
5. The electrothermal microactuator of claim 4 wherein: the two shuttle plate beams (2) are positioned on two sides of the thermal isolation shuttle plate (13) and extend out towards the two sides, and the extending end is connected with the driving beam array (3).
6. An electrothermal microactuator for suppressing temperature rise at the output end of displacement as defined in any one of claims 1 to 4 wherein: the shuttle plate beam electrode (1) is one.
7. An electrothermal microactuator for suppressing temperature rise at the output end of displacement as defined in any one of claims 1 to 4 wherein: the number of the shuttle plate beam electrodes (1) is two, one of the two shuttle plate beam electrodes is positioned at one side of the shuttle plate beam (2) and is close to the driving beam array (3) at the same side; the other is positioned at the other side of the shuttle plate beam (2) and is close to the driving beam array (3) at the same side.
8. An electrothermal microactuator for suppressing temperature rise at the output end of displacement as defined in any one of claims 1 to 4 wherein: the number of the driving beams in the driving beam array (3) on one side of the shuttle plate beam (2) is odd, and the anchor point I (4) and the driving electrode (5) on the same side are both one.
9. An electrothermal microactuator for suppressing temperature rise at the output end of displacement as defined in any one of claims 1 to 4 wherein: the number of the driving beams in the driving beam array (3) on one side of the shuttle plate beam (2) is even, and one or two anchor points I (4) and driving electrodes (5) on the same side are provided.
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| US12091310B2 (en) * | 2020-05-27 | 2024-09-17 | Apogee Semiconductor, Inc. | Integrated circuit packages having stress-relieving features |
| CN112861329B (en) * | 2021-01-22 | 2022-10-25 | 郑州轻工业大学 | Method for quickly calculating and designing output characteristics of electrothermal micro-driver under thermal management |
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| V型和Z型电热微驱动器性能比较与分析;张绪平等;《北京工业大学学报》;20151130;第41卷(第11期);第1637页图1，1640页表1 * |
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| CN109384191A (en) | 2019-02-26 |
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