CN109383089A - 一种氮化硅宽频带透波材料 - Google Patents

一种氮化硅宽频带透波材料 Download PDF

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CN109383089A
CN109383089A CN201710684766.XA CN201710684766A CN109383089A CN 109383089 A CN109383089 A CN 109383089A CN 201710684766 A CN201710684766 A CN 201710684766A CN 109383089 A CN109383089 A CN 109383089A
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silicon nitride
wave transparent
electromagnetic wave
broadband electromagnetic
transparent material
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马娜
门薇薇
孙世宁
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AVIC Research Institute Special Structures Aeronautical Composites
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Abstract

本发明涉及一种透波复合材料，特别涉及一种氮化硅宽频带透波材料。所述的材料包括七层，所述的材料包括Si3N4、Al2O3、Y2O3、造孔剂和分散剂，对应比例为1：x1：x2：x3：x4：x5；从上至下第一、三、五、七层材料配比相同，其中x1＝0.03‑0.08，x2＝0.02‑0.04，x3＝0.06‑0.1，x4＝0.01‑0.03，x5＝5‑13；从上至下第二、四、六层材料配比相同，其中x1＝0.01‑0.05，x2＝0.03‑0.08，x3＝0.1‑0.5，x4＝0.04‑0.08，x5＝13‑20。本发明提供一种七层氮化硅多层结构，可通过调节介电常数实现在18～40GHz的高频段、宽频带透波特性。本发明用于新一代高超音速空空、空地、地空反辐射导弹天线罩及其它耐高温次承力部件，具有一定的军事效益和经济效益。

Description

一种氮化硅宽频带透波材料
技术领域
本发明涉及一种透波复合材料，特别涉及一种氮化硅宽频带透波材料。
背景技术
随着现代战争的需要以及航空航天技术的发展，高超声速飞行器的马赫数越来越高。目前各类高超声速飞行器的飞行速度多在4Ma以上，再入速度已达到8～12Ma甚至更高，对得电磁窗口提出了耐高温的要求。与此同时，随着现代反辐射导弹导引头技术的不断发展，导引头可以工作在很宽的频段范围内，无论是敌方的警戒雷达(频率较低)还是导弹制导、炮瞄雷达(频率较高)均处于攻击范围内，覆盖雷达工作频率0.1～40GHz。为了保证在恶劣环境条件下通讯、遥测、制导、引爆等系统的正常工作，发展耐高温、宽频带透波材料是目前发展的必然趋势。
有机树脂基透波复合材料只能在500℃短期使用；陶瓷基复合材料避免了陶瓷的脆性，但制备工艺技术不成熟离型号应用仍有较长的差距；氮化物类无机陶瓷类透波材料具有介电常数可调节、力学性能优异的特点，且可通过多层复合技术实现宽频技术指标要求。
Boeing公司研制了一种双层结构以氮化硅、钡铝硅酸盐为组分的天线罩材料，芯层和蒙皮的介电性能、弹性模量、热膨胀等性能在500℃下基本保持不变，但仅能在较窄频带内实现透波性能。美国和以色列制备了A型夹层的Si3N4陶瓷天线罩，外层为相对致密的Si3N4，而内层为多孔的Si3N4，未见宽频透波性能方面的报道。美国制备5层的SiO2/Si3N4/SiO2/Si3N4/SiO2陶瓷天线罩。在6～18GHz宽频范围内0°入射角的透波率为80％～95％，60°入射角的透波率为42％～97％，未见其他频带性能报道。
目前所制备的氮化硅多层结构最多仅为5层，只能在某一特定频带内透波，未见氮化硅7层结构制备方法的相关报道。另外，在材料上往往是氮化硅材料与其他低温材料组合实现多层结构，未见纯氮化硅多层结构的报道
发明内容
本发明的目的：提供一种宽频带的透波材料。
本发明的技术方案：一种氮化硅宽频带透波材料，其特征为：所述的材料包括七层，所述的材料包括Si3N4、Al2O3、Y2O3、造孔剂和分散剂，对应比例为1：x1：x2：x3：x4：x5；
从上至下第一、三、五、七层材料配比相同，其中x1＝0.03-0.08，x2＝0.02-0.04，x3＝0.06-0.1，x4＝0.01-0.03，x5＝5-13；
从上至下第二、四、六层材料配比相同，其中x1＝0.01-0.05，x2＝0.03-0.08，x3＝0.1-0.5，x4＝0.04-0.08，x5＝13-20。
优选地，所述材料每一层通过多层氮化硅薄膜叠加而成。
优选地，所述的氮化硅薄膜通过流延成型制备而成。
优选地，通过以下方法进行流延成型：
步骤一，将浆料材料Si3N4粉体、Al2O3粉体、Y2O3粉体、造孔剂、分散剂混合为物料，将物料在200～500r/min转速下球磨24～48小时后制得浆料；
步骤二，将浆料真空除泡后在玻璃基板上流延成型，流延过程中刮刀速度为5～30cm/min；将流延成型的浆料在真空20-80℃条件下进行干燥成型。
优选地，第一、三、五、七层材料配比为x1＝0.05，x2＝0.03，x3＝0.1，x4＝0.02，x5＝10；
第二、四、六层材料配比为x1＝0.02，x2＝0.05，x3＝0.5，x4＝0.05，x5＝15。
本发明的有益效果：本发明提供一种七层氮化硅多层结构，可通过调节介电常数实现在18～40GHz的高频段、宽频带透波特性。本发明用于新一代高超音速空空、空地、地空反辐射导弹天线罩及其它耐高温次承力部件，具有一定的军事效益和经济效益。
附图说明
图1为18～40GHz透波率曲线(俯仰角-45°)；
图2为18～40GHz透波率曲线(俯仰角-30°)；
图3为18～40GHz透波率曲线(俯仰角-15°)；
图4为18～40GHz透波率曲线(俯仰角0°)；
图5为18～40GHz透波率曲线(俯仰角15°)；
图6为18～40GHz透波率曲线(俯仰角30°)；
图7为18～40GHz透波率曲线(俯仰角45°)。
具体实施方式
具体提供一种氮化硅宽频带透波材料，包括以下步骤：
步骤一，将浆料材料Si3N4粉体、Al2O3粉体、Y2O3粉体、造孔剂、分散剂按照1：x1：x2：x3：x4：x5对应比例混合为物料，将物料在200～500r/min转速下球磨24～48小时后制得浆料；
步骤二，将浆料真空除泡后在玻璃基板上流延成型，流延过程中刮刀速度为5～30cm/min；将流延成型的浆料在真空20-80℃条件下进行干燥成型，干燥时间为0.5～20小时。
其中，每一层的厚度及介电常数见表1所示。第一、三、五、七层材料配比为x1＝0.04，x2＝0.03，x3＝0.08，x4＝0.02，x5＝8；第二、四、六层材料配比为x1＝0.03，x2＝0.06，x3＝0.4，x4＝0.06，x5＝18。
表1厚度及介电常数对应表
名称 厚度，mm 介电常数
第一层 0.4 3.2
第二层 1.5 1.2
第三层 0.4 3.2
第四层 1.5 1.2
第五层 0.4 3.2
第六层 1.5 1.2
第七层 0.4 3.2
步骤三、等静压成型
将七层氮化硅材料按顺序交替叠放入模具中，进行等静压成型，得到陶瓷胚体，等静压条件为：压强1～50MPa、时间为0.5～10小时、温度为20～100℃；
步骤四、排胶
等静压成型后，将陶瓷胚体中的有机物去除，排胶条件为：升温速率5～10℃/min、在100～600℃保温1～5小时，得到陶瓷素胚；
步骤五、热压烧结
将陶瓷素胚放入模具中进行热压烧结，烧结条件为：升温速率5～10℃/min、烧结温度为800～1800℃、压力为0.5～10MPa、保温时间为2～10小时；得到多层氮化硅陶瓷材料。
采用遗传算法对所制备的多层陶瓷结构进行等效平板仿真，得到18-40GHz下的透波率如图所示。从图中可得在大角度入射条件下，材料的透波率大于90％。

Claims (5)

1.一种氮化硅宽频带透波材料，其特征为：所述的材料包括七层，所述的材料包括Si3N4、Al2O3、Y2O3、造孔剂和分散剂，对应比例为1：x1：x2：x3：x4：x5；
从上至下第一、三、五、七层材料配比相同，其中x1＝0.03-0.08，x2＝0.02-0.04，x3＝0.06-0.1，x4＝0.01-0.03，x5＝5-13；
从上至下第二、四、六层材料配比相同，其中x1＝0.01-0.05，x2＝0.03-0.08，x3＝0.1-0.5，x4＝0.04-0.08，x5＝13-20。
2.根据权利要求1所述的一种氮化硅宽频带透波材料，其特征为：所述材料每一层通过多层氮化硅薄膜叠加而成。
3.根据权利要求2所述的一种氮化硅宽频带透波材料，其特征为：所述的氮化硅薄膜通过流延成型制备而成。
4.根据权利要求3所述的一种氮化硅宽频带透波材料，其特征在于通过以下方法进行流延成型：
步骤一，将浆料材料Si3N4粉体、Al2O3粉体、Y2O3粉体、造孔剂、丙烯酸分散剂、液体乙醇与聚乙烯醇混合为物料，将物料在200～500r/min转速下球磨24～48小时后制得浆料；
步骤二，将浆料真空除泡后在玻璃基板上流延成型，流延过程中刮刀速度为5～30cm/min；将流延成型的浆料在真空20-80℃条件下进行干燥成型。
5.根据权利要求1所述的一种氮化硅宽频带透波材料，其特征为：第一、三、五、七层材料配比为x1＝0.05，x2＝0.03，x3＝0.1，x4＝0.02，x5＝10；
第二、四、六层材料配比为x1＝0.02，x2＝0.05，x3＝0.5，x4＝0.05，x5＝15。
CN201710684766.XA 2017-08-11 2017-08-11 一种氮化硅宽频带透波材料 Pending CN109383089A (zh)

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JPH1086279A (ja) * 1996-09-18 1998-04-07 Toshiba Corp 窒化ケイ素多層基板およびその製造方法
US5866245A (en) * 1995-12-22 1999-02-02 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Silicon nitride ceramics having a high reliability and a method for production thereof
CN102225869A (zh) * 2011-04-12 2011-10-26 中材高新材料股份有限公司 高温宽频透波复合材料及其制备方法
CN108218438A (zh) * 2016-12-15 2018-06-29 中国航空工业集团公司济南特种结构研究所 一种氮化硅宽频带透波材料

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866245A (en) * 1995-12-22 1999-02-02 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Silicon nitride ceramics having a high reliability and a method for production thereof
JPH1086279A (ja) * 1996-09-18 1998-04-07 Toshiba Corp 窒化ケイ素多層基板およびその製造方法
CN102225869A (zh) * 2011-04-12 2011-10-26 中材高新材料股份有限公司 高温宽频透波复合材料及其制备方法
CN108218438A (zh) * 2016-12-15 2018-06-29 中国航空工业集团公司济南特种结构研究所 一种氮化硅宽频带透波材料

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