CN109375440A - Display panel - Google Patents
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- CN109375440A CN109375440A CN201811570102.1A CN201811570102A CN109375440A CN 109375440 A CN109375440 A CN 109375440A CN 201811570102 A CN201811570102 A CN 201811570102A CN 109375440 A CN109375440 A CN 109375440A
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 238000002161 passivation Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 2
- 238000013461 design Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application provides a display panel, this display panel has seted up the via hole through the position department in first active switch on first base plate, via hole department is provided with transparent conducting layer, the one end of spacer is supported and is pushed away first conducting layer and this transparent conducting layer and link to each other, therefore first active switch can transmit the signal to the second common electrode of second base plate through transparent conducting layer and spacer in proper order on, therefore need not to set up the dark shallow hole, the rethread dark shallow hole realizes being connected between first active switch and the common electrode line, thereby can avoid leading to the bad phenomenon of electric connection because of the difference of dark shallow hole topographic height, and then promote display panel's yield. Meanwhile, the deep and shallow holes are usually disposed between the scan lines and the main pixel electrodes, occupying a certain space and affecting the aperture ratio. According to the pixel structure, the depth hole is eliminated, so that the occupied area between the scanning line and the main pixel electrode can be saved, and the aperture opening ratio is improved.
Description
Technical field
It is more specifically to be related to a kind of display panel that the application, which is suitable for display equipment technical field,.
Background technique
VA (Vertical Alignment, vertical orientation) is shown with its wide viewing angle, high contrast and without friction matching
Etc. advantages, become display equipment TFT-LCD (Thin Film Transistor Liquid Crystal Display, film
Transistor liquid crystal display (TFT-LCD)) common display pattern.
In order to improve the visual angle of VA escope, a kind of image element structure of 8domain (farmland) can be designed, main pixel is divided
(main picture element) and sub pixel (sub- picture element).Generally use three TFT (Thin Film Transistor, thin film transistor (TFT))
Structure design, the Partial charge on the sub- picture element of TFT substrate is discharged by walking for (array) side Array by third TFT
On line, to realize 8 domain structures, and then the yield of display is improved.In the transfer design of above-mentioned charge, need third
The drain electrode of TFT and the first layer metal (Metal 1) of the side Array are connected to form access.Currently, often using depth hole come real
Existing electrical communication.Difference of the depth hole due to landform height, it will usually the conduction of signal is influenced, to influence display panel
Yield and reliability.
Apply for content
One of the application is designed to provide a kind of display panel, and including but not limited to improvement basal plate making process, promotion is aobvious
Show panel yield.
To achieve the above object, the application the technical solution adopted is that: a kind of display panel is provided, comprising:
First substrate, including scan line, data line, the first active switch and multiple picture elements, each picture element include main picture
Plain electrode and sub- pixel electrode, the two sides of each picture element are respectively equipped with the data line, the scan line and each data
Line is vertically non-intersecting, and the main pixel electrode is set to the side of the scan line, and the sub- pixel electrode is set to the scan line
The other side；
The second substrate is oppositely arranged with the first substrate, is equipped with the second public electrode；
Spacer, is set to the second substrate, and the spacer is equipped with first connect with second public electrode
Conductive layer；
Wherein, the sub- pixel electrode is connect with second public electrode by first active switch, and described
Via hole is offered on one substrate at the position of first active switch, is equipped with and first active switch at the via hole
The transparency conducting layer of electrical connection, the spacer push first conductive layer and are connected with the transparency conducting layer.
In one embodiment, the second substrate includes the second base, and second public electrode is set to described second
In base, second public electrode and first conductive layer are structure as a whole.
In one embodiment, black matrix" is equipped between second base and second public electrode.
In one embodiment, colored filter is equipped between the black matrix" and second public electrode.
In one embodiment, the first substrate includes the first base, the first metal in first base
Layer, the silicon island layer on the gate insulation layer, is set on the silicon island layer gate insulation layer on the first metal layer
Second metal layer and third metal layer and passivation layer, the second metal layer and the third metal layer same layer interval set
It sets, the passivation layer wraps up the silicon island layer, the second metal layer and the third metal layer.
In one embodiment, the via hole is opened on the passivation layer, the via hole and the second metal layer pair
It should be arranged.
In one embodiment, the first substrate further includes the second active switch and third active switch, and described second
Active switch is electrical connected with the sub- pixel electrode and the data line respectively, and the third active switch is respectively with described
Two active switches and the main pixel electrode are electrical connected.
In one embodiment, second active switch is the switch of structure of being in U-shape；The third active switch be in
The switch of U-shaped structure.
In one embodiment, the transparency conducting layer and the main pixel electrode and the sub- pixel electrode are same
One-pass molding in processing procedure.
The another object of the application is to provide a kind of display panel, comprising:
First substrate, including scan line, data line, the first active switch and multiple picture elements, each picture element include main picture
Plain electrode and sub- pixel electrode, the two sides of each picture element are respectively equipped with the data line, the scan line and each data
Line is vertically non-intersecting, and the main pixel electrode is set to the side of the scan line, and the sub- pixel electrode is set to the scan line
The other side；
The second substrate is oppositely arranged with the first substrate, and second including the second base and in the base is public
Common electrode；
Spacer, is set to the second substrate, and second public electrode covers the spacer；
Wherein, the sub- pixel electrode is connect with second public electrode by first active switch, and described
One active switch includes source electrode and drain electrode, and first active switch is equipped with passivation layer, and the passivation layer is in the drain electrode
Position offers via hole, is equipped with transparency conducting layer at the via hole, the spacer push second public electrode with it is described
Transparency conducting layer.
The embodiment of the present application is set at via hole by offering via hole at the position of the first active switch on the first substrate
It is equipped with transparency conducting layer, one end of spacer pushes the first conductive layer and is connected with the transparency conducting layer, therefore the first active switch
Signal can be successively transferred on the second public electrode of the second substrate through transparency conducting layer and spacer, thus that no setting is required is deep
Shallow bore hole, then the connection between the first active switch and public electrode wire is realized by depth hole, to can avoid because of depth hole
The phenomenon that the difference of shape height causes electrical communication bad, and then promote the yield of display panel.Simultaneously as depth hole is usual
It is set between scan line and main pixel electrode, occupies certain space, influence aperture opening ratio.The application due to eliminating depth hole,
And then the area occupied between scan line and main pixel electrode, increasing opening rate can be saved.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, embodiment or comparative example technology will be retouched below
Attached drawing needed in stating is briefly described, it should be apparent that, the accompanying drawings in the following description is only the one of the application
A little embodiments for those of ordinary skill in the art without any creative labor, can also be according to this
A little attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram for the display panel that comparative example provides；
Fig. 2 is the schematic cross-section in Fig. 1 at depth hole；
Fig. 3 is the structural schematic diagram of display panel provided by the embodiments of the present application；
Fig. 4 is the partial structure diagram of the first active switch provided by the embodiments of the present application；
Fig. 5 is the schematic cross-section of the first active switch provided by the embodiments of the present application；
Fig. 6 is the circuit diagram of display panel provided by the embodiments of the present application.
Wherein, each attached drawing main mark in figure:
1- first substrate；10- transparency conducting layer；The first base of 100-；11- the first metal layer；12- gate insulation layer；13- silicon
Island layer；14- second metal layer；15- third metal layer；16- passivation layer；160- via hole；The first active switch of 17-；18- second is main
Dynamic switch；19- third active switch；
2- the second substrate；The second public electrode of 21-；22- black matrix"；23- colored filter；The second base of 24-；
3- spacer；The first conductive layer of 31-；
The main pixel electrode of 4-；5- pixel electrode；6- scan line；7- data line；8- depth hole；The first public electrode of 9-.
Specific embodiment
In order to which technical problems to be solved in this application, technical solution and beneficial effect is more clearly understood, tie below
Accompanying drawings and embodiments are closed, the application is further elaborated.It should be appreciated that specific embodiment described herein is only
To explain the application, it is not used to limit the application.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or indirectly on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
In addition, term " first ", " second ", " third " are used for description purposes only, it is not understood to indicate or imply phase
To importance or implicitly indicate the quantity of indicated technical characteristic." first ", " second ", " third " are defined as a result,
Feature can explicitly or implicitly include one or more of the features.In the description of the present application, the meaning of " multiple "
It is two or more, unless otherwise specifically defined.
In the description of the present application, it is to be understood that term " center ", " length ", " width ", " thickness ", "upper",
The orientation or position of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside"
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description the application and simplifies description, without referring to
Show or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot manage
Solution is the limitation to the application.
In the description of the present application, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
The interaction relationship of connection or two elements inside two elements.It for the ordinary skill in the art, can be with
The concrete meaning of above-mentioned term in this application is understood as the case may be.
Also referring to Fig. 3 to Fig. 6, now display panel provided by the embodiments of the present application is illustrated.The display panel
Including first substrate 1, with the second substrate 2 of the spaced and parallel setting of first substrate 1 and be set to first substrate 1 and the second substrate 2 it
Between spacer 3.First substrate 1 include multiple data lines 7, a plurality of scan line 6 vertical and disjoint with data line 7 and
Multiple picture elements, each picture element include: between two data lines 7 and to be located at the sub- pixel electrode 5 of 6 side of scan line, be set to
Main pixel electrode 4 between two data lines 7 and positioned at 6 other side of scan line, wherein sub- pixel electrode 5 passes through the first active
Switch 17 and the second public electrode 21 of the second substrate 2 are electrical connected.On first substrate 1 at the position of the first active switch 17
Via hole 160 is offered, transparency conducting layer 10 is equipped at via hole 160, one end of spacer 3 is equipped with and the connection of the second public electrode 21
The first conductive layer 31, one end of spacer 3 pushes first conductive layer 31 and is electrical connected with transparency conducting layer 10, the other end with
The second substrate 2 is electrical connected.
Optionally, which is provided at position corresponding with the drain electrode of the first active switch 17, so as to reduce cloth
If track lengths, increase signal transmission effect and efficiency.In other embodiments, via hole 160 also can be set in other positions
Place is set, such as is arranged at position corresponding with the source electrode of the first active switch 17, is not limited uniquely herein.
Also referring to the display panel that Fig. 1 and Fig. 2 comparative example provides, which offers on first substrate 1
Depth hole 8, the depth hole 8 are specifically provided between scan line 6 and main pixel electrode 4, and the drain electrode of the first active switch 17 passes through
The depth hole 8 and the first public electrode 9 of first substrate 1 are electrically connected.Depth hole 8 due to landform height difference, it is right
The processing procedures such as film forming, exposure, there are also the conductions of signal can all have a certain impact, to influence yield and the trust of display panel
Property.Meanwhile the space between 8 busy scan line 6 of depth hole and main pixel electrode 4, reduce aperture opening ratio.
The embodiment of the present application is by offering via hole 160, via hole at the position of the first active switch 17 in first substrate 1
Transparency conducting layer 10 is provided at 160, one end of spacer 3 pushes the first conductive layer 31 and is connected with the transparency conducting layer 10, into
And it is connected with the second public electrode 21.Therefore the first active switch 17 drain electrode can by signal successively through transparency conducting layer 10 and
Parting 3 is transferred on the second public electrode 21 of the second substrate 2, thus no setting is required depth hole 8, then will be real by depth hole 8
Connection between existing first active switch 17 and public electrode wire, to can avoid causing because of the difference of 8 landform height of depth hole
Form a film phenomenon bad, that electrical communication is bad, and then promotes the yield of display panel.Simultaneously as eliminating depth hole 8, mistake
Hole 160 is not take up the space between scan line 6 and main pixel electrode 4, and only corresponds to the region of the first active switch 17, Jin Erti
Aperture opening ratio is risen.
Optionally, above-mentioned transparency conducting layer 10 and main pixel electrode 4 and sub- pixel electrode 5 can be one in same processing procedures
Secondary molding.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind specific embodiment, the first conductive layer 31 and the second public electrode 21 are integrally formed, that is to say, that can be by the first conductive layer
31 and second public electrode 21 be referred to as the second public electrode.Specifically, the drain electrode of the first active switch 17 and setting are in via hole
Transparency conducting layer 10 in 160 is contacted to be electrically connected, and transparency conducting layer 10 connects with the first conductive layer 31 of spacer 3
Touching is electrically connected with forming electrical downlink connection with the second public electrode 21；The source electrode and son of first active switch 17
Pixel electrode 5 is electrically connected, and the first conductive layer 31 is around on the lateral wall of spacer 3.This structure, the first active switch 17
Drain electrode can successively 21 electrical communication of the second public electrode through transparency conducting layer 10 Yu the second substrate 2, the first active switch 17
It can transmit signals on the second public electrode 21, so as to cancel the design in depth hole 8, to improve the yield of product.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind specific embodiment, the second substrate 2 include the second base 24, the black matrix" 22 being set in the second base 24.This structure,
By the way that black matrix is arranged on second substrate 2, on the one hand can cover due to the structures such as scan line 6, data line 7 and data line 7
Neighbouring liquid crystal disorder and cause the uncontrollable light leakage of emergent light, improve the excitation purity of display pattern；On the other hand, as display
The transition region of area and surrounding mechanical framework is to improve visual effect.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind specific embodiment, is equipped with colored filter 23 between black matrix" 22 and the second public electrode 21.Specifically, the second substrate
2 can be used as CF substrate, and colored filter 23 can be anti-by selecting the peak power output of color passband and display to carry out display
Difference enhancing.Through this structure, the color effect of display panel can be increased, and then improve the display effect of display.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind specific embodiment, first substrate 1 include the first base 100, and the first metal layer 11 being set in the first base 100 is set
In the gate insulation layer 12 on the first metal layer 11, the layer of the silicon island on gate insulation layer 12 13, second on silicon island layer 13
Metal layer 14 and third metal layer 15, and it is set to second metal layer 14, third metal layer 15 and exposed gate insulation layer
Passivation layer 16 on 12, second metal layer 14 and 15 same layer of third metal layer and interval setting, passivation layer 16 is by silicon island layer 13, the
Two metal layers 14 and third metal layer 15 coat.Wherein, the first metal layer 11 is used to form the first public electrode 9 and scan line 6.
Second metal layer 14 and third metal layer 15 can be used to form the first active switch 17.Passivation layer 16 corresponds to the first active switch 17
Drain electrode at open up via hole 160.
Specifically, third metal layer 15 can be used as the source electrode of the first active switch 17, and second metal layer 14 can be used as first
The drain electrode of active switch 17, the width of second metal layer 14 are greater than the width of third metal layer 15.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind specific embodiment, via hole 160 are opened on passivation layer 16, and via hole 160 is correspondingly arranged with second metal layer 14.Specifically,
By being arranged via hole 160 on passivation layer 16 corresponding with second metal layer 14, since the width of second metal layer 14 is greater than
The width of third metal layer 15, therefore can increase via hole 160 as far as possible opens up area, thus increase the first active switch 17 with thoroughly
Fitting area between bright conductive layer 10 improves transmission area and delivery rate between signal charge.This structure, first actively
The drain electrode of switch 17 can be electrically connected by via hole 160 and transparency conducting layer 10, so as to reduce the length of drain electrode cabling, be reduced
Processing procedure reduces cost.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind of specific embodiment, first substrate 1 further include the second active switch 18 and third active switch 19, the first active switch 17,
Second active switch 18 and third active switch 19 can form in same processing procedure, specifically can by same metal layer into
Row etching obtains.Second active switch 18 is electrical connected with sub- pixel electrode 5 and data line 7 respectively, and third active switch 19 is divided
It is not electrical connected with the second active switch 18 and main pixel electrode 4.Specifically, the source electrode Yu data line 7 of the second active switch 18
It is electrical connected, the drain electrode of the second active switch 18 is electrical connected with sub- pixel electrode 5；The source electrode of third active switch 19 and second
The source electrode of active switch 18 is connected, and the drain electrode of third active switch 19 is electrical connected with main pixel electrode 4, the second active switch 18
Grid and the grid of the third active switch 19 be electrical connected respectively with scan line 6.This structure passes through the first active switch
17, the design of the second active switch 18 and third active switch 19, to can realize that 3T image element structure designs, 8 farmland picture elements are set
The visual angle of VA type liquid crystal display can be improved in meter.
In one embodiment, also referring to Fig. 3 to Fig. 5, as display panel provided by the embodiments of the present application one
Kind of specific embodiment, the second active switch 18 and third active switch 19 are the switch of structure of being in U-shape.Specifically, it improves
The method of on-state current is usually to increase channel width, increases channel width according to the polar-symmetric TFT structure of source and drain, on the one hand
It will increase TFT occupied area, reduce picture element aperture opening ratio；On the other hand it will increase parasitic capacitance, increase scan line 6 and data line 7
The quality characteristic of TFT is influenced while impedance.This structure, the second active switch 18 and third active switch 19 of U-shaped structure were both
It can increase respective channel width, and can be effectively controlled the size of respective area and parasitic capacitance, to improve the product of product
Matter.It is designed using U-shaped structure, channel width doubles, and for TFT area there is no doubling, parasitic capacitance when OFF state is also basic
It remains unchanged.In other embodiments, the second active switch 18 and third active switch 19 or other structures switch,
This is not limited uniquely.
Optionally, transparency conducting layer 10 and the second public electrode 21 can be material and thickness conductive layer all the same, should
Conductive layer is chosen as tin indium oxide (Indium Tin Oxide, abbreviation ITO) layer；Or material and thickness are different leads
Electric layer, such as each conductive layer have different thickness, conductivity, do not limit uniquely herein.
The above description is only an example of the present application, not to limit the application, it is all in spirit herein and
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within principle.
Claims (10)
1. a kind of display panel characterized by comprising
First substrate, including scan line, data line, the first active switch and multiple picture elements, each picture element include main picture element electricity
Pole and sub- pixel electrode, the two sides of each picture element are respectively equipped with the data line, and the scan line and each data line hang down
Straight non-intersecting, the main pixel electrode is set to the side of the scan line, and the sub- pixel electrode is set to the another of the scan line
Side；
The second substrate is oppositely arranged with the first substrate, is equipped with the second public electrode；
Spacer is set to the second substrate, and it is conductive that the spacer is equipped with first connect with second public electrode
Layer；
Wherein, the sub- pixel electrode is connect with second public electrode by first active switch, first base
Via hole is offered on plate at the position of first active switch, is equipped at the via hole and is electrically connected with first active switch
The transparency conducting layer connect, the spacer push first conductive layer and are connected with the transparency conducting layer.
2. display panel as described in claim 1, it is characterised in that: the second substrate include the second base, described second
Public electrode is set in second base, and second public electrode and first conductive layer are structure as a whole.
3. display panel as claimed in claim 2, it is characterised in that: between second base and second public electrode
Equipped with black matrix".
4. display panel as claimed in claim 3, it is characterised in that: between the black matrix" and second public electrode
Equipped with colored filter.
5. display panel as described in claim 1, it is characterised in that: the first substrate includes the first base, set on described
The first metal layer in first base, the gate insulation layer on the first metal layer, the silicon on the gate insulation layer
Island layer, the second metal layer on the layer of the silicon island and third metal layer and passivation layer, the second metal layer and described
The setting of third metal layer same layer interval, the passivation layer is by silicon island layer, the second metal layer and the third metal layer
Package.
6. display panel as claimed in claim 5, it is characterised in that: the via hole is opened on the passivation layer, the mistake
Hole is correspondingly arranged with the second metal layer.
7. display panel as described in claim 1, it is characterised in that: the first substrate further includes the second active switch and
Three active switches, second active switch are electrical connected with the sub- pixel electrode and the data line respectively, the third
Active switch is electrical connected with second active switch and the main pixel electrode respectively.
8. display panel as claimed in claim 7, it is characterised in that: second active switch is the switch of structure of being in U-shape；
The third active switch is the switch of structure of being in U-shape.
9. display panel as described in claim 1, it is characterised in that: the transparency conducting layer and the main pixel electrode and
Sub- pixel electrode one-pass molding in same processing procedure.
10. a kind of display panel characterized by comprising
First substrate, including scan line, data line, the first active switch and multiple picture elements, each picture element include main picture element electricity
Pole and sub- pixel electrode, the two sides of each picture element are respectively equipped with the data line, and the scan line and each data line hang down
Straight non-intersecting, the main pixel electrode is set to the side of the scan line, and the sub- pixel electrode is set to the another of the scan line
Side；
The second substrate is oppositely arranged with the first substrate, the second common electrical including the second base and in the base
Pole；
Spacer, is set to the second substrate, and second public electrode covers the spacer；
Wherein, the sub- pixel electrode is connect with second public electrode by first active switch, and described first is main
Dynamic switch includes source electrode and drain electrode, and first active switch is equipped with passivation layer, and the passivation layer is in the position of the drain electrode
Offer via hole, be equipped with transparency conducting layer at the via hole, the spacer push second public electrode with it is described transparent
Conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811570102.1A CN109375440A (en) | 2018-12-21 | 2018-12-21 | Display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811570102.1A CN109375440A (en) | 2018-12-21 | 2018-12-21 | Display panel |
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| CN109375440A true CN109375440A (en) | 2019-02-22 |
Family
ID=65371186
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| CN201811570102.1A Pending CN109375440A (en) | 2018-12-21 | 2018-12-21 | Display panel |
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Cited By (1)
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| CN110262139A (en) * | 2019-06-11 | 2019-09-20 | 惠科股份有限公司 | Contact hole structure, array substrate and display panel |
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