CN109368587A - Geomagnetic sensor part and its manufacturing method - Google Patents
Geomagnetic sensor part and its manufacturing method Download PDFInfo
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- CN109368587A CN109368587A CN201811278178.7A CN201811278178A CN109368587A CN 109368587 A CN109368587 A CN 109368587A CN 201811278178 A CN201811278178 A CN 201811278178A CN 109368587 A CN109368587 A CN 109368587A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910000889 permalloy Inorganic materials 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 167
- 238000005516 engineering process Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00063—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
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Abstract
This application discloses a kind of geomagnetic sensor part and its manufacturing methods, which includes: cmos circuit；And sensor, it is located on cmos circuit, cmos circuit is connect with sensor, for driving sensor and handling the detection signal of sensor generation, wherein sensor includes: structure sheaf；Magnetoresistive strip, short-circuiting electrode and the metal connecting line successively formed on structure sheaf；And first conductive layer and the second conductive layer, it is located above structure sheaf, the first conductive layer is connected with cmos circuit and metal connecting line respectively, and the second conductive layer is connected with cmos circuit and external circuit respectively.By forming sensor on cmos circuit, and being electrically connected by the first conductive layer and the second conductive layer realization cmos circuit and sensor, it realizes cmos circuit driving sensor and handles the function for the detection signal that sensor generates, achieved the purpose that cmos circuit and sensor will be integrated.
Description
Technical field
This disclosure relates to technical field of semiconductors, more particularly, to a kind of geomagnetic sensor part and its manufacturing method.
Background technique
Micro mechanical system (Micro-Electro-Mechanical System, MEMS) and integrated circuit (integrated
Circuit, IC) it is currently most important two development fields of semiconductor industry.Under the promotion that global science and technology rapidly develops,
MEMS's and IC is integrated into a kind of inexorable trend.There are three types of its integrated approaches: single-chip integration, meromict (bonding) are integrated and mixed
Intersection at.Single-chip integration refers to MEMS structure and CMOS manufacture on a single die.Hybrid integrated is to make MEMS and IC respectively
It makes on different tube cores, is then encapsulated in a shell, the package structure of MEMS device with salient point in the form of face-down bonding or is drawn
Line bonding mode and IC chip are connected with each other, and form SIP.Meromict is to realize MEMS chip and CMOS using three-dimensional integration technology
Solid it is integrated.Single-chip integration is MEMS and IC is the important development direction of integrated technology, particularly with radio frequency thin-film body sound
It has many good qualities for wave filter.Firstly, processing circuit can be realized detection, the transmitting-receiving of signal higher close to micro-structure
Precision；Secondly, integrated system volume reduces, it is low in energy consumption；Again, number of devices is reduced, package pin number reduces, and reliability mentions
It is high.
In existing three axis geomagnetic sensor manufacturing technology, system in package (system in a is mostly used greatly
Package, SIP) geomagnetic sensor, ASIC conjunction are enclosed in together.SIP, which refers to, integrates multiple functional chips in a packaging body,
It is attached between chip by the wire bonding of substrate.The intermodule interconnection of SIP is very long, integration density is lower, to signal
It is unfavorable to transmit, and manufacturing process is cumbersome and is unfavorable for integrating.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of geomagnetic sensor part and its manufacturing methods, on cmos circuit
It forms sensor, and being electrically connected by the first conductive layer and the second conductive layer realization cmos circuit and sensor, realizes
Cmos circuit drives sensor and handles the function for the detection signal that sensor generates.
According to an aspect of the present invention, a kind of geomagnetic sensor part is provided, comprising: cmos circuit；And sensor, position
In on the cmos circuit, the cmos circuit is connect with the sensor, for driving described in the sensor and processing
The detection signal that sensor generates, wherein the sensor includes: structure sheaf；The magnetic resistance successively formed on the structure sheaf
Item, short-circuiting electrode and metal connecting line；And first conductive layer and the second conductive layer, it is located above the structure sheaf, described the
One conductive layer is connected with the cmos circuit and the metal connecting line respectively, and second conductive layer is electric with the CMOS respectively
Road and external circuit are connected.
Preferably, there is groove, the groove has inclined side wall in the structure sheaf.
Preferably, the structure sheaf includes: the multi-layer silica dioxide being sequentially depositing on the cmos circuit.
Preferably, distribution gradient, the thickness of the structure sheaf are more than or equal to the density of the structure sheaf along the longitudinal direction
Preset value.
Preferably, the tilt angle of the sloped sidewall includes 30 ° to 60 °.
Preferably, the magnetoresistive strip includes: X-axis magnetoresistive strip, positioned at the plane domain of the structure sheaf；Y-axis magnetoresistive strip, position
In the plane domain of the structure sheaf；And Z axis magnetoresistive strip, it is located at the side wall.
Preferably, the short-circuiting electrode and the metal connecting line are located above the magnetoresistive strip.
Preferably, the short-circuiting electrode and the magnetoresistive strip are in default angle, and the default angle includes 45 °.
Preferably, the sensor further includes dielectric layer, and the dielectric layer covers the structure sheaf, the magnetoresistive strip, institute
State short-circuiting electrode and the metal connecting line.
Preferably, the surface of the cmos circuit has the first weld pad and the second weld pad, and first conductive layer passes through institute
State dielectric layer, the structure sheaf is connect with first weld pad, second conductive layer pass through the dielectric layer, the structure sheaf
It is connect with second weld pad.
Preferably, the dielectric layer has through-hole, and first conductive layer passes through the through-hole phase with the metal connecting line
Even.
Preferably, the sensor further includes passivation layer, has opening, and the passivation layer covers first conductive layer
With second conductive layer, at least partly described second conductive layer is exposed by the opening.
Preferably, the groove is in inverted trapezoidal.
Preferably, the magnetoresistive strip includes: the titanium layer, permalloy layer and nitridation sequentially formed on the structure sheaf
Titanium layer, or the tantalum layer, permalloy layer and the tantalum nitride layer that are sequentially formed on the structure sheaf.
Preferably, first conductive layer and second conductive layer include interconnecting piece, the company of first conductive layer
Socket part is connected with the cmos circuit and the metal connecting line respectively, the interconnecting piece of second conductive layer respectively with it is described
Cmos circuit and the external circuit are connected.
According to another aspect of the present invention, a kind of manufacturing method of geomagnetic sensor part is provided, comprising: form CMOS electricity
Road；And sensor is formed on the cmos circuit, the cmos circuit is connect with the sensor, for driving the biography
Sensor and the detection signal for handling the sensor generation, wherein the step of forming the sensor includes: to form structure sheaf；
Magnetoresistive strip, short-circuiting electrode and metal connecting line are sequentially formed on the structure sheaf；And first is formed on the structure sheaf
Conductive layer and the second conductive layer, first conductive layer is connected with the cmos circuit and the metal connecting line respectively, described
Second conductive layer is connected with the cmos circuit and external circuit respectively.
Preferably, the step of forming the structure sheaf includes: to be sequentially depositing multi-layer silica dioxide on the cmos circuit.
Preferably, before the step of sequentially forming magnetoresistive strip, short-circuiting electrode and metal connecting line on the structure sheaf, shape
The step of at the sensor further include: groove is formed in the structure sheaf, the groove has inclined side wall.
Preferably, the step of forming the groove includes by the structure pattern layers, so that being formed has sloped sidewall
Groove, wherein the density of structure sheaf distribution gradient along the longitudinal direction, the thickness of the structure sheaf are more than or equal to default
Value.
Preferably, the method that multi-layer silica dioxide is sequentially depositing on the cmos circuit includes: plasma enhancing
Learn vapour deposition process.
Preferably, the technological temperature for forming the structure sheaf is less than or equal to 300 DEG C.
Preferably, the tilt angle of the sloped sidewall includes 30 ° to 60 °.
Preferably, the step of forming the magnetoresistive strip include: the structure sheaf plane domain formed X-axis magnetoresistive strip with
Y-axis magnetoresistive strip；And Z axis magnetoresistive strip is formed in the side wall.
Preferably, the short-circuiting electrode and the metal connecting line are located above the magnetoresistive strip.
Preferably, the short-circuiting electrode and the magnetoresistive strip are in default angle, and the default angle includes 45 °.
Preferably, before forming the first conductive layer and the second conductive layer, the step of forming the sensor further include: cover
It covers the structure sheaf, the magnetoresistive strip, the short-circuiting electrode and the metal connecting line and forms dielectric layer.
Preferably, the cmos circuit surface has the first weld pad and the second weld pad, and first conductive layer passes through described
Dielectric layer, the structure sheaf are connect with first weld pad, second conductive layer pass through the dielectric layer, the structure sheaf with
The second weld pad connection.
Preferably, before forming the first conductive layer and the second conductive layer, the step of forming the sensor further include:
Through-hole is formed in the dielectric layer, first conductive layer is connected with the metal connecting line by the through-hole.
Preferably, after forming the first conductive layer and the second conductive layer, the step of forming the sensor further include: cover
It covers first conductive layer and second conductive layer forms passivation layer；Opening is formed in the passivation layer, at least with exposure
Part second conductive layer.
Preferably, before patterning the structure sheaf, the step of forming the groove further includes on the structure sheaf
It is rectangular at mask, wherein the mask is trapezoidal in just setting, and the groove is in inverted trapezoidal.
Preferably, the step of forming the magnetoresistive strip includes: that titanium layer, permalloy layer are sequentially formed on the structure sheaf
And titanium nitride layer, or tantalum layer, permalloy layer and tantalum nitride layer are sequentially formed on the structure sheaf.
Preferably, first conductive layer and second conductive layer include interconnecting piece, the company of first conductive layer
Socket part is connected with the cmos circuit and the metal connecting line respectively, the interconnecting piece of second conductive layer respectively with it is described
Cmos circuit and the external circuit are connected.
Magnetic sensor device according to an embodiment of the present invention forms sensor on cmos circuit, and passes through the first conductive layer
Being electrically connected for cmos circuit and sensor is realized with the second conductive layer, realizes cmos circuit driving sensor and processing sensor
The function of the detection signal of generation has achieved the purpose that cmos circuit and sensor will be integrated.Magnetic according to an embodiment of the present invention
Senser element reduces cmos circuit at a distance from sensor, strengthens CMOS electricity by forming sensor on cmos circuit
The ability for the detection signal that road generates the driving capability and processing sensor of sensor, greatly improves magnetic sensor device
Precision.
Magnetic sensor device according to an embodiment of the present invention reduces magnetic sensing by forming sensor on cmos circuit
The total volume of device increases the integrated level of magnetic sensor device, reduces the power consumption of magnetic sensor device, while reducing package tube
Foot improves the reliability of magnetic sensor device.
The manufacturing method of magnetic sensor device according to an embodiment of the present invention is being less than or equal to 300 degrees Celsius of technological temperature
It is lower formed include multi-layer silica dioxide layer structure sheaf, and then the groove with sloped sidewall is formed using etching technics, and it is existing
There is technology to compare, the present invention can form the groove with sloped sidewall by low temperature process, at such a temperature, be used to form electricity
The metal on road, which will not melt, leads to circuit malfunction, further improves the reliability of device.
The manufacturing method of magnetic sensor device according to an embodiment of the present invention, by the way that Z axis magnetoresistive strip is directly produced on groove
Sloped sidewall on, to sense magnetic signal strength, compared with prior art, the present invention passes through the Z axis magnetoresistive strip on sloped sidewall
The magnetic signal strength of direct measurement Z-direction, avoids the error formed in conductive process, loss, to improve measurement
Precision is high.
Therefore, the geomagnetic sensor part high sensitivity of this method manufacture, while significantly reducing manufacturing cost again and improving work
Skill compatibility.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the schematic cross-section of the geomagnetic sensor part of the embodiment of the present invention.
Fig. 2 shows the manufacturing method schematic diagrames of the geomagnetic sensor part of the embodiment of the present invention.
Fig. 3 shows the manufacturing method schematic diagram of the sensor in Fig. 2.
Fig. 4 A, 4B, 4C, 5,6B, 7B, 8 are shown in the manufacturing method of geomagnetic sensor part according to an embodiment of the present invention
The schematic cross-section in a part of stage.
Fig. 6 A, 7A respectively illustrate the top view of Fig. 6 B, 7B.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown certain
Well known part.
Many specific details of the invention, such as structure, material, size, the processing work of device is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
The present invention can be presented in a variety of manners, some of them example explained below.
Fig. 1 shows the schematic cross-section of the geomagnetic sensor part of the embodiment of the present invention.
As shown in Figure 1, the geomagnetic sensor part of the embodiment of the present invention includes: cmos circuit and the biography on cmos circuit
Sensor, wherein cmos circuit is connect with sensor, for driving sensor and handling the detection signal of sensor generation.CMOS
Circuit includes: substrate 100, the first well region 110, the first source/drain region 111, first grid conductor 112, the first side wall 113, second
Well region 120, the second source/drain region 121, second grid conductor 122, the second side wall 123, field oxygen zone 131, grid oxide layer 132, first are situated between
Matter layer 140, the first interlayer interconnecting pins 151, the second interlayer interconnecting pins 152, cmos circuit interconnecting pins 153 and mutual UNPROFOR
Sheath 160.Sensor includes: structure sheaf 210, magnetoresistive strip, short-circuiting electrode, metal connecting line, the 240, first conduction of third dielectric layer
The 251, second conductive layer 252 of layer and passivation layer 260.
First well region 110, the first source/drain region 111, first grid conductor 112, the first side wall 113 constitute the first transistor,
Second well region 120, the second source/drain region 121, second grid conductor 122, the second side wall 123 constitute second transistor, first crystal
Pipe is located on substrate 100 with second transistor, however the embodiment of the present invention is not limited to this, and those skilled in the art can basis
It needs to carry out other settings to the number of transistor.
First medium layer 140 and second dielectric layer 160 are sequentially located on the first transistor and second transistor, and first
Dielectric layer 140 and second dielectric layer 160 have multiple intercommunicating pores, and the first interlayer interconnecting pins 151 pass through first by intercommunicating pore
Dielectric layer 140 and second dielectric layer 160, one end is connected with the first transistor, and the other end stretches out cmos circuit surface (second medium
160 surface of layer) form the first weld pad.Second interlayer interconnecting pins 152 pass through first medium layer 140 and second by intercommunicating pore and are situated between
Matter layer 160, one end is connected with second transistor, and the other end stretches out cmos circuit surface and forms the second weld pad.The first transistor with
And second transistor is connected by cmos circuit interconnecting pins 153.
Structure sheaf 210 is located on cmos circuit, and the groove with sloped sidewall is formed in structure sheaf 210, wherein knot
Structure layer 210 includes the multi-layer silica dioxide being sequentially depositing on cmos circuit, and structure sheaf 210 is anisotropy, and density is along vertical
To direction distribution gradient, the thickness of structure sheaf 210 is more than or equal to preset value, such as thickness is about 4-5 μm, and the shape of groove is in
Inverted trapezoidal, the tilt angle of sloped sidewall includes 30 to 60 °, preferably 45 °.
Magnetoresistive strip includes: multiple X-axis magnetoresistive strips 221, multiple Y-axis magnetoresistive strips and multiple Z axis magnetoresistive strips 223, wherein X
Axis magnetoresistive strip 221 and Y-axis magnetoresistive strip are located at the plane domain of structure sheaf 210, and Z axis magnetoresistive strip 223 is located at at least side of groove
Side wall on.In the present embodiment, magnetoresistive strip include: the titanium layer sequentially formed on structure sheaf 210, permalloy layer and
Titanium nitride layer, or the tantalum layer, permalloy layer and the tantalum nitride layer that are sequentially formed on structure sheaf 210.
It includes: X-axis short-circuiting electrode 231, Y-axis short-circuiting electrode and Z axis short-circuiting electrode that short-circuiting electrode, which is located above magnetoresistive strip,
233, wherein X-axis short-circuiting electrode 231 and X-axis magnetoresistive strip 221, Y-axis short-circuiting electrode and Y-axis magnetoresistive strip, Z axis short-circuiting electrode 233 and
Z axis magnetoresistive strip 223 all has 45 ° of angle.
Metal connecting line is located above magnetoresistive strip, comprising: the interconnection line of X-axis magnetoresistive strip, the interconnection line of Y-axis magnetoresistive strip, Z axis magnetic
Hinder the interconnection line 236 of item, wherein the interconnection line of X-axis magnetoresistive strip is for making multiple X-axis magnetoresistive strips 221 form interconnection, Y-axis magnetic resistance
The interconnection line of item is used to that multiple Y-axis magnetoresistive strips to be made to form interconnection, the interconnection line of Z axis magnetoresistive strip is used to make multiple Z axis magnetoresistive strips 223
Form interconnection.
Third dielectric layer 240 is covered on above structure sheaf 210, magnetoresistive strip, short-circuiting electrode and metal connecting line, wherein the
Three dielectric layers 240 have through-hole, and the material of third dielectric layer 240 is preferably silica.
First conductive layer 251 and the second conductive layer 252 are located at 240 top of structure sheaf 210 and third dielectric layer, and first is conductive
Layer 251 is connected with the interconnection line 236 of the first weld pad and Z axis magnetoresistive strip respectively, and the second conductive layer 252 is connected with the second weld pad,
First conductive layer 251 and the second conductive layer 252 are for reseting sensor and COMS circuit.
Further, the interconnecting piece 251a of the first conductive layer 251 passes through through-hole and Z by the surface of third dielectric layer 240
The interconnection line 236 of axis magnetoresistive strip is connected.The interconnecting piece 252a of second conductive layer 252 not with any interconnection including X-axis magnetoresistive strip
Line, the interconnection line of Y-axis magnetoresistive strip, Z axis magnetoresistive strip interconnection line 236 including metal connecting line be connected.
In the present embodiment, the section of the interconnecting piece 251a of the first conductive layer 251 is corresponded in the part of structure sheaf 210 in cone
Shape, the side wall of taper are arc wide at the top and narrow at the bottom, and corresponding in the part of third dielectric layer 240 is in rectangle；Second conductive layer 252
The section of interconnecting piece 252a is identical as interconnecting piece 251a, and details are not described herein again, can also be in rectangle or taper.However it is of the invention
Embodiment is not limited to this, and those skilled in the art the interconnecting piece to the first conductive layer and the second conductive layer can carry out as needed
Other settings.
Passivation layer 260 covers third dielectric layer 240, the first conductive layer 251 and the second conductive layer 252.Wherein, it is passivated
Layer 260 has opening 261, and at least partly the second conductive layer 252 passes through 261 exposure of opening.
Fig. 2 shows the manufacturing method schematic diagrames of the geomagnetic sensor part of the embodiment of the present invention.
As shown in Fig. 2, in step slo, forming cmos circuit.In step S20, sensor is formed.Due to CMOS electricity
The manufacturing method on road is conventional method, and details are not described herein again, hereinafter, it will to the system of the senser element of the embodiment of the present invention
The method of making is described in detail.
Fig. 3 shows the manufacturing method schematic diagram of the sensor in Fig. 2, as shown in figure 3, can pass through following steps S21
Sensor is formed to S26.
In the step s 21, structure sheaf is formed.Specifically, as shown in Figure 4 A, firstly, being sequentially depositing on cmos circuit more
Layer silica, so that covering interconnection protective layer 160 forms structure sheaf 210, wherein deposit the method for multi-layer silica dioxide for example
Including plasma enhanced chemical vapor deposition method, the technological temperature for forming structure sheaf 210 is less than or equal to 300 DEG C, structure sheaf
210 be anisotropy, density distribution gradient along the longitudinal direction, also, the thickness of structure sheaf 210 is more than or equal to preset value,
Such as 4-5 μm.Then at the first opening 201 and the second opening 202 is formed in structure sheaf 210, with exposed first weld pad respectively
With the second weld pad.Formed first opening 201 with second opening 202 methods include wet etching, etching expose the first weld pad with
Stop when the second weld pad.First opening 201 and the size on the second 202 tops of opening are all larger than the size of bottom, the first opening 201
Side wall with the second opening 202 is respectively to the center curvature of the first opening 201 and the second opening 202.
In some other embodiments, the first opening 201 and the second opening 202 are in rectangle, as shown in 4B.
In yet other embodiment, the first opening 201 and the second opening 202 are in inverted taper, as shown in 4C.
In step S22, groove is formed in structure sheaf.Specifically, as shown in figure 5, forming groove in structure sheaf 210
211, groove 211 has sloped sidewall.The specific steps for forming groove 211 include: to be coated with photoresist on structure sheaf 210
Agent, coating thickness are about 4 μm；After development of photoresist, the pattern of photoresist need to be adjusted to the trapezoidal knot for being positive and setting
Structure, using as mask；Using the method for wet etching, by the side wall graph copying to structure sheaf 210 of photoresist with shape
At the groove 211 with sloped sidewall, the groove 211 is in inverted trapezoidal, wherein the tilt angle of sloped sidewall includes 30 °
To 60 °, preferably 45 °.
In step S23, magnetoresistive strip is formed on structure sheaf.Specifically, as shown in Fig. 6 A, Fig. 6 B, in structure sheaf 210
Plane domain forms multiple parallel X-axis magnetoresistive strips 221 and multiple parallel Y-axis magnetoresistive strips 222, X-axis magnetoresistive strip 221 and Y-axis
The orientation of magnetoresistive strip 222 is vertical, and Z axis magnetoresistive strip 223 is formed at least one side wall of groove 211.Form magnetoresistive strip
The step of include: that titanium layer, permalloy layer and titanium nitride layer are sequentially formed on structure sheaf 210, or on structure sheaf 210
Sequentially form tantalum layer, permalloy layer and tantalum nitride layer.Above-mentioned three-decker can be formed by the method for sputtering, wherein titanium
Layer thickness be aboutThe thickness of permalloy is aboutThe thickness of titanium nitride is about
In step s 24, short-circuiting electrode and metal connecting line are formed on structure sheaf.Specifically, such as Fig. 7 A, Fig. 7 B institute
Show, form multiple X-axis short-circuiting electrodes 231 above each X-axis magnetoresistive strip 221, forms Y-axis above each Y-axis magnetoresistive strip 222
Short-circuiting electrode 232 forms multiple Z axis short-circuiting electrodes 233 above each Z axis magnetoresistive strip 223.Each short-circuiting electrode and each magnetic
Hindering item is in default angle, and presetting angle includes 45 °.It is formed above X-axis magnetoresistive strip 221 for making multiple 221 shapes of X-axis magnetoresistive strip
At the interconnection line 234 of the X-axis magnetoresistive strip of interconnection, formed above Y-axis magnetoresistive strip 222 for making multiple formation of Y-axis magnetoresistive strip 222
The interconnection line 235 of the Y-axis magnetoresistive strip of interconnection is formed above Z axis magnetoresistive strip 223 for forming multiple Z axis magnetoresistive strips 223 mutually
The interconnection line 236 of the Z axis magnetoresistive strip of connection.
The method for forming short-circuiting electrode and metal connecting line includes: to first pass through to be lithographically formed using stripping technology lift-off
Short-circuiting electrode and metal connecting line window, then diffusion barrier layer and metal layer are formed by sputtering, evaporation technology, finally using removing
Technique removes the diffusion barrier layer and metal layer of photoresist and its top.Wherein, the preferred titanium nitride of diffusion barrier layer, thickness
It is preferred thatThe preferred titanium layer of metal layer adds aluminium layer, and titanium layer thickness is preferredAluminum layer thickness is preferred
In step s 25, overlay structure layer, magnetoresistive strip, short-circuiting electrode and metal connecting line form dielectric layer.Specifically,
As shown in figure 8, the pattern of dielectric layer 240 and the conformal matching of structure sheaf 210, and by the method for etching in the first opening, second
The top of the interconnection line 236 of opening and Z axis magnetoresistive strip forms through-hole, wherein and the preferred silica of 240 material of dielectric layer is thick
Degree is about
In step S26, the first conductive layer and the second conductive layer are formed on structure sheaf and dielectric layer.Specifically, such as Fig. 8
It is shown, the first conductive layer 251 and the second conductive layer 252, the interconnecting piece 251a of the first conductive layer 251, second are formed in through hole
The interconnecting piece 252a of conductive layer 252 is matched with the shape of the first opening, the second opening respectively, and the first conductive layer 251 is respectively with the
The interconnection line 236 of one weld pad and Z axis magnetoresistive strip is connected.Second conductive layer 252 is connected with the second weld pad.Form the first conductive layer
251 and second the method for conductive layer 252 include: that the first conductive layer 251 and the second conduction are formed by sputtering and patterning process
Layer 252, wherein the first conductive layer 251 and the second conductive layer 252 include the titanium nitride layer and aluminium layer that sequentially form, titanium nitride layer
Thickness is aboutAluminum layer thickness is about 4-6 μm.
In step s 27, it covers the first conductive layer and the second conductive layer forms passivation layer, and formed open in the passivation layer
Mouthful, with exposure at least partly the second conductive layer, is drawn as final weld pad, form geomagnetic sensor part as shown in Figure 1.
Magnetic sensor device according to an embodiment of the present invention, on the cmos circuit that surface has the first weld pad and the second weld pad
Sensor is formed, by being electrically connected for the first conductive layer and the second conductive layer realization cmos circuit and sensor, realizes CMOS
The function for the detection signal that circuit drives sensor and processing sensor generate, having reached cmos circuit and sensor will be integrated
Purpose.
Magnetic sensor device according to an embodiment of the present invention reduces CMOS electricity by forming sensor on cmos circuit
Road strengthens the detection signal that cmos circuit generates the driving capability of sensor and processing sensor at a distance from sensor
Ability, greatly improve the precision of magnetic sensor device.
Magnetic sensor device according to an embodiment of the present invention reduces magnetic sensing by forming sensor on cmos circuit
The total volume of device increases the integrated level of magnetic sensor device, reduces the power consumption of magnetic sensor device, while reducing package tube
Foot improves the reliability of magnetic sensor device.
The manufacturing method of magnetic sensor device according to an embodiment of the present invention is being less than or equal to 300 degrees Celsius of technological temperature
It is lower to form the structure sheaf including multi-layer silica dioxide layer, and then the groove with sloped sidewall is formed using etching technics, such as
By plasma enhanced chemical vapor deposition method, compared with prior art, the present invention can be formed by low temperature process to be had
The groove of sloped sidewall, at such a temperature, the metal for being used to form circuit, which will not melt, leads to circuit malfunction, further improves
The reliability of device.
The manufacturing method of magnetic sensor device according to an embodiment of the present invention, by the way that Z axis magnetoresistive strip is directly produced on groove
Sloped sidewall on, to sense magnetic signal strength, compared with prior art, the present invention passes through the Z axis magnetoresistive strip on sloped sidewall
The magnetic signal strength of direct measurement Z-direction, avoids the error formed in conductive process, loss, to improve measurement
Precision is high.
Therefore, the geomagnetic sensor part high sensitivity of this method manufacture, while significantly reducing manufacturing cost again and improving work
Skill compatibility.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (32)
1. a kind of geomagnetic sensor part, comprising:
Cmos circuit；And
Sensor is located on the cmos circuit, and the cmos circuit is connect with the sensor, for driving the sensing
Device and the detection signal for handling the sensor generation,
Wherein, the sensor includes:
Structure sheaf；
Magnetoresistive strip, short-circuiting electrode and metal connecting line are successively formed on the structure sheaf；And
First conductive layer and the second conductive layer are located above the structure sheaf, and first conductive layer is electric with the CMOS respectively
Road and the metal connecting line are connected, and second conductive layer is connected with the cmos circuit and external circuit respectively.
2. geomagnetic sensor part according to claim 1, wherein there is groove, the groove has in the structure sheaf
Inclined side wall.
3. geomagnetic sensor part according to claim 2, wherein the structure sheaf include: on the cmos circuit according to
The multi-layer silica dioxide of secondary deposition.
4. geomagnetic sensor part according to claim 3, wherein the density of the structure sheaf is divided in gradient along the longitudinal direction
The thickness of cloth, the structure sheaf is more than or equal to preset value.
5. geomagnetic sensor part according to claim 3, wherein the tilt angle of the sloped sidewall include 30 ° extremely
60°。
6. geomagnetic sensor part according to claim 3, wherein the magnetoresistive strip includes:
X-axis magnetoresistive strip, positioned at the plane domain of the structure sheaf；
Y-axis magnetoresistive strip, positioned at the plane domain of the structure sheaf；And
Z axis magnetoresistive strip is located at the side wall.
7. geomagnetic sensor part according to claim 1, wherein the short-circuiting electrode and the metal connecting line are positioned at described
Above magnetoresistive strip.
8. geomagnetic sensor part according to claim 7, wherein the short-circuiting electrode and the magnetoresistive strip are in default folder
Angle, the default angle include 45 °.
9. geomagnetic sensor part according to claim 1, wherein the sensor further includes dielectric layer, the dielectric layer
Cover the structure sheaf, the magnetoresistive strip, the short-circuiting electrode and the metal connecting line.
10. geomagnetic sensor part according to claim 9, wherein the surface of the cmos circuit have the first weld pad with
Second weld pad,
First conductive layer passes through the dielectric layer, the structure sheaf is connect with first weld pad, second conductive layer
It is connect across the dielectric layer, the structure sheaf with second weld pad.
11. geomagnetic sensor part according to claim 9, wherein the dielectric layer has through-hole,
First conductive layer is connected with the metal connecting line by the through-hole.
12. geomagnetic sensor part according to claim 1, wherein the sensor further includes passivation layer, has and opens
Mouthful, the passivation layer covers first conductive layer and second conductive layer,
At least partly described second conductive layer is exposed by the opening.
13. geomagnetic sensor part according to claim 2, wherein the groove is in inverted trapezoidal.
14. geomagnetic sensor part according to claim 1, wherein the magnetoresistive strip includes:
Titanium layer, permalloy layer and the titanium nitride layer sequentially formed on the structure sheaf, or on the structure sheaf according to
Tantalum layer, permalloy layer and the tantalum nitride layer of secondary formation.
15. -14 any geomagnetic sensor part according to claim 1, wherein first conductive layer is led with described second
Electric layer includes interconnecting piece,
The interconnecting piece of first conductive layer is connected with the cmos circuit and the metal connecting line respectively,
The interconnecting piece of second conductive layer is connected with the cmos circuit and the external circuit respectively.
16. a kind of manufacturing method of geomagnetic sensor part, comprising:
Form cmos circuit；And
Sensor is formed on the cmos circuit, the cmos circuit is connect with the sensor, for driving the sensing
Device and the detection signal for handling the sensor generation,
Wherein, the step of forming the sensor include:
Form structure sheaf；
Magnetoresistive strip, short-circuiting electrode and metal connecting line are sequentially formed on the structure sheaf；And
Form the first conductive layer and the second conductive layer on the structure sheaf, first conductive layer respectively with the cmos circuit
And the metal connecting line is connected, second conductive layer is connected with the cmos circuit and external circuit respectively.
17. the manufacturing method according to claim 16, wherein the step of forming the structure sheaf includes: in the CMOS
Multi-layer silica dioxide is sequentially depositing on circuit.
18. manufacturing method according to claim 17, wherein sequentially form magnetoresistive strip, short circuit electricity on the structure sheaf
Before the step of pole and metal connecting line, the step of forming the sensor further include: groove, institute are formed in the structure sheaf
Groove is stated with inclined side wall.
19. manufacturing method according to claim 18, wherein the step of forming the groove includes by the structure sheaf figure
Case, so that the groove with sloped sidewall is formed,
Wherein, distribution gradient, the thickness of the structure sheaf are more than or equal to preset value to the density of the structure sheaf along the longitudinal direction.
20. according to the method for claim 17, wherein be sequentially depositing the side of multi-layer silica dioxide on the cmos circuit
Method includes: plasma enhanced chemical vapor deposition method.
21. according to the method for claim 20, wherein the technological temperature for forming the structure sheaf is less than or equal to 300 DEG C.
22. according to the method for claim 18, wherein the tilt angle of the sloped sidewall includes 30 ° to 60 °.
23. manufacturing method according to claim 19, wherein the step of forming the magnetoresistive strip include:
X-axis magnetoresistive strip and Y-axis magnetoresistive strip are formed in the plane domain of the structure sheaf；And
Z axis magnetoresistive strip is formed in the side wall.
24. the manufacturing method according to claim 16, wherein the short-circuiting electrode and the metal connecting line are located at the magnetic
It hinders above item.
25. manufacturing method according to claim 24, wherein the short-circuiting electrode is in default angle with the magnetoresistive strip,
The default angle includes 45 °.
26. the manufacturing method according to claim 16, wherein before forming the first conductive layer and the second conductive layer, shape
The step of at the sensor further include: cover the structure sheaf, the magnetoresistive strip, the short-circuiting electrode and the metal and connect
Line forms dielectric layer.
27. manufacturing method according to claim 26, wherein the cmos circuit surface has the first weld pad and the second weldering
Pad,
First conductive layer passes through the dielectric layer, the structure sheaf is connect with first weld pad, second conductive layer
It is connect across the dielectric layer, the structure sheaf with second weld pad.
28. manufacturing method according to claim 27, wherein before forming the first conductive layer and the second conductive layer, shape
The step of at the sensor further include: through-hole is formed in the dielectric layer,
First conductive layer is connected with the metal connecting line by the through-hole.
29. the manufacturing method according to claim 16, wherein after forming the first conductive layer and the second conductive layer, shape
The step of at the sensor further include:
It covers first conductive layer and second conductive layer forms passivation layer；
Opening is formed, in the passivation layer at least partly described second conductive layer of exposure.
30. manufacturing method according to claim 19, wherein before patterning the structure sheaf, form the groove
The step of further include forming mask above the structure sheaf,
Wherein, the mask is trapezoidal in just setting, and the groove is in inverted trapezoidal.
31. the manufacturing method according to claim 16, wherein the step of forming the magnetoresistive strip include:
Titanium layer, permalloy layer and titanium nitride layer are sequentially formed on the structure sheaf, or
Tantalum layer, permalloy layer and tantalum nitride layer are sequentially formed on the structure sheaf.
32. any manufacturing method of 6-31 according to claim 1, wherein first conductive layer and second conduction
Layer includes interconnecting piece,
The interconnecting piece of first conductive layer is connected with the cmos circuit and the metal connecting line respectively,
The interconnecting piece of second conductive layer is connected with the cmos circuit and the external circuit respectively.
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