CN109360889B - Perovskite solar cell with high filling factor and preparation method thereof - Google Patents
Perovskite solar cell with high filling factor and preparation method thereof Download PDFInfo
- Publication number
- CN109360889B CN109360889B CN201810892472.0A CN201810892472A CN109360889B CN 109360889 B CN109360889 B CN 109360889B CN 201810892472 A CN201810892472 A CN 201810892472A CN 109360889 B CN109360889 B CN 109360889B
- Authority
- CN
- China
- Prior art keywords
- film
- transparent conductive
- conductive substrate
- solar cell
- perovskite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011049 filling Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 238000002161 passivation Methods 0.000 claims abstract description 91
- 238000001704 evaporation Methods 0.000 claims abstract description 90
- 238000004528 spin coating Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- -1 methylamine lead halide Chemical class 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 claims abstract description 19
- 229910001508 alkali metal halide Inorganic materials 0.000 claims abstract description 18
- 150000008045 alkali metal halides Chemical group 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 280
- 238000000137 annealing Methods 0.000 claims description 109
- 230000008020 evaporation Effects 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 57
- 230000005525 hole transport Effects 0.000 claims description 54
- 238000004140 cleaning Methods 0.000 claims description 42
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 40
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 40
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 40
- 238000007738 vacuum evaporation Methods 0.000 claims description 30
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229920001940 conductive polymer Polymers 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 20
- 229910021641 deionized water Inorganic materials 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 9
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 8
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 8
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 claims description 8
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 8
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 8
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 claims description 6
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 claims description 6
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 6
- 229920003055 poly(ester-imide) Polymers 0.000 claims description 6
- 229920000767 polyaniline Polymers 0.000 claims description 6
- 229920000123 polythiophene Polymers 0.000 claims description 6
- 229920001447 polyvinyl benzene Polymers 0.000 claims description 6
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 6
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 6
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 claims description 6
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Chemical compound [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims description 4
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 claims description 4
- 229910001621 beryllium bromide Inorganic materials 0.000 claims description 4
- PBKYCFJFZMEFRS-UHFFFAOYSA-L beryllium bromide Chemical compound [Be+2].[Br-].[Br-] PBKYCFJFZMEFRS-UHFFFAOYSA-L 0.000 claims description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 4
- 229910001622 calcium bromide Inorganic materials 0.000 claims description 4
- 239000001110 calcium chloride Substances 0.000 claims description 4
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 4
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 claims description 4
- 229910001640 calcium iodide Inorganic materials 0.000 claims description 4
- 229940046413 calcium iodide Drugs 0.000 claims description 4
- 239000002322 conducting polymer Substances 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 239000001103 potassium chloride Substances 0.000 claims description 4
- 235000011164 potassium chloride Nutrition 0.000 claims description 4
- 239000011775 sodium fluoride Substances 0.000 claims description 4
- 235000013024 sodium fluoride Nutrition 0.000 claims description 4
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 claims description 3
- 229910001620 barium bromide Inorganic materials 0.000 claims description 3
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims description 3
- 229910001626 barium chloride Inorganic materials 0.000 claims description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 claims description 3
- 229910001638 barium iodide Inorganic materials 0.000 claims description 3
- 229940075444 barium iodide Drugs 0.000 claims description 3
- 229910001627 beryllium chloride Inorganic materials 0.000 claims description 3
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical group F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 claims description 3
- 229910001633 beryllium fluoride Inorganic materials 0.000 claims description 3
- 229910001639 beryllium iodide Inorganic materials 0.000 claims description 3
- JUCWKFHIHJQTFR-UHFFFAOYSA-L beryllium iodide Chemical compound [Be+2].[I-].[I-] JUCWKFHIHJQTFR-UHFFFAOYSA-L 0.000 claims description 3
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 3
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 claims description 3
- 229910001623 magnesium bromide Inorganic materials 0.000 claims description 3
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 3
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001641 magnesium iodide Inorganic materials 0.000 claims description 3
- 239000011698 potassium fluoride Substances 0.000 claims description 3
- 235000003270 potassium fluoride Nutrition 0.000 claims description 3
- 229940102127 rubidium chloride Drugs 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 235000009518 sodium iodide Nutrition 0.000 claims description 3
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 claims description 3
- 229910001625 strontium bromide Inorganic materials 0.000 claims description 3
- 229940074155 strontium bromide Drugs 0.000 claims description 3
- 229910001631 strontium chloride Inorganic materials 0.000 claims description 3
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 claims description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims description 3
- 229910001637 strontium fluoride Inorganic materials 0.000 claims description 3
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001643 strontium iodide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 13
- 238000005215 recombination Methods 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 219
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 42
- 239000000463 material Substances 0.000 description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 10
- 239000004793 Polystyrene Substances 0.000 description 8
- 229920002223 polystyrene Polymers 0.000 description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 6
- VHRWBBFFEWVNIX-UHFFFAOYSA-N methylazanium;propan-2-ol;iodide Chemical compound [I-].[NH3+]C.CC(C)O VHRWBBFFEWVNIX-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- AGAZXGMYGKRIEO-UHFFFAOYSA-L [Pb](I)I.C(=N)N Chemical compound [Pb](I)I.C(=N)N AGAZXGMYGKRIEO-UHFFFAOYSA-L 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- DJMZKFUAQIEDKC-UHFFFAOYSA-N lithium rubidium Chemical compound [Li].[Rb] DJMZKFUAQIEDKC-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a perovskite solar cell with high filling factor and a preparation method thereofA titanium ore film, an interface passivation layer, an electron transport layer and a cathode; the interface passivation layer is alkali metal halide or alkaline earth metal halide evaporated on the perovskite film, and the thickness of the interface passivation layer is 1-5 nm; the electron transmission layer is C evaporated on the interface passivation layer60Film, C60The thickness of the film is 10-20 nm; the cathode is a metal film evaporated on the electron transport layer, and the thickness of the metal film is 50-120 nm; the perovskite film adopts methylamine lead halide or formamidine lead halide; and a conductive film is arranged on the transparent conductive substrate. The defect that the large-area solar cell device cannot be prepared by the existing spin coating technology is overcome, the interface passivation layer is prepared by adopting a method of evaporating alkali metal halide or alkaline earth metal halide, the carrier recombination at the interface of the perovskite light absorption layer and the electron transmission layer is reduced, the efficiency of the solar cell is improved, and the mass production of the large-area cell can be realized.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cells; in particular to a perovskite solar cell with high filling factor; also relates to a preparation method of the solar cell.
Background
In recent years, the organic lead-halogen perovskite material has received great attention because of its ability to manufacture low-cost, high-efficiency solar cells. High solar cell efficiency benefits from the excellent photovoltaic properties and unique defect performance of perovskite materials, resulting in perovskite materials having low carrier recombination rates. The diffusion length of the carriers can exceed the light attenuation length of the material inside the perovskite material crystal grains. Meanwhile, due to the development of the passivation process, the recombination of current carriers at the crystal boundary can be obviously reduced, and the efficiency of the perovskite solar cell can be further improved. Conventionally, the surface defects of the perovskite and the transmission layer are passivated by adding an interface modification layer (the molecular formula is R1-R-R2) between the perovskite active layer and the electron transmission layer, so that the interaction between undesirable molecules and the perovskite or the transmission layer is prevented, perovskite crystal nuclei can be assisted to be formed more uniformly, the quality of the perovskite thin film is improved, perovskite crystal grains are controlled accurately, the electron or hole transmission efficiency between the perovskite active layer and the transmission layer can be improved, and the aim of increasing the efficiency and stability of the battery is fulfilled. However, the method increases the interface conductivity between the perovskite and the transmission layer, and increases the recombination of a photon-generated carrier at the interface of the perovskite thin film and the transmission layer, so that the efficiency of the perovskite solar cell cannot be effectively improved. In order to further improve the efficiency of solar cells, it is important to consider reducing the recombination of carriers at the interfaces of different functional layers in the cell device. In the study of silicon solar cells, Okamoto et al use oxide and amorphous silicon as insulating layers, which are interposed between intrinsic silicon materials and heavily doped silicon materials, to effectively reduce the recombination of carriers at the interface and improve the efficiency of the silicon solar cells. However, the preparation of such an insulating layer requires high temperature deposition, which makes it unusable for the preparation of perovskite solar cell devices.
For perovskite solar cells, Huang et al use Polystyrene (PS) in reflective solar cells to achieve this goal, the PS film can allow the tunneling of photo-generated electrons from the perovskite layer to the electron transport layer, while blocking the passage of photo-generated holes through the interface of the perovskite light absorption layer and the electron transport layer, resulting in spatial separation of the photo-generated electrons and holes, reducing the recombination of carriers at the interface of the perovskite and the electron transport layer, and thus improving the efficiency of the solar cell. Lin et al used the same method applied to positive perovskite cells, with a PS film added between the perovskite light absorbing material and the hole transporting material. Through impedance spectrum tests, the introduction of the PS film is found to effectively increase the magnitude of recombination resistance, so that the recombination of electrons and holes at an interface is prevented, and the efficiency of the perovskite battery is improved. In these methods, they all use spin coating process to prepare PS thin film, but the conventional spin coating process is not favorable for preparing large-area cell devices, and thus the application of this method in the mass production of perovskite cells is hindered. Therefore, a method suitable for preparing a high-efficiency large-area cell is found, and the method has important significance for commercialization of the perovskite solar cell.
Disclosure of Invention
The invention provides a perovskite solar cell with a high filling factor and a preparation method thereof. The defect that the large-area solar cell device cannot be prepared by the existing spin coating technology is overcome, the interface passivation layer is prepared by adopting alkali metal halide or alkaline earth metal halide, the carrier recombination at the interface of the perovskite light absorption layer and the electron transmission layer is reduced, the efficiency of the solar cell is improved, and the mass production of the large-area cell can be realized.
The technical scheme of the invention is as follows: a perovskite solar cell with a high filling factor is sequentially provided with a transparent conductive substrate, a hole transport layer, a perovskite thin film, an interface passivation layer, an electron transport layer and a cathode from bottom to top; the interface passivation layer is alkali metal halide or alkaline earth metal halide which is evaporated on the perovskite film in vacuum, and the thickness of the interface passivation layer is 1-5 nm; the electron transmission layer is C evaporated on the interface passivation layer in vacuum60The thickness of the electron transport layer is 10-20 nm; (ii) a The cathode is a metal film which is vacuum-evaporated on the electron transport layer, and the thickness of the metal film is 50-120 nm; the perovskite film adopts methylamine lead halide or formamidine lead halide; and a conductive film is arranged on the transparent conductive substrate.
Furthermore, the invention is characterized in that:
wherein the alkali metal halide is lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, lithium chloride, sodium chloride, potassium chloride, rubidium chloride, cesium chloride, lithium bromide, sodium bromide, potassium bromide, rubidium bromide, cesium bromide, lithium iodide, sodium iodide, potassium iodide, rubidium iodide or cesium iodide; the alkaline earth metal halide is beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, beryllium chloride, magnesium chloride, calcium chloride, strontium chloride, barium chloride, beryllium bromide, magnesium bromide, calcium bromide, strontium bromide, barium bromide, beryllium iodide, magnesium iodide, calcium iodide, strontium iodide or barium iodide.
Wherein the metal film is a gold film, a silver film, a copper film or an aluminum film.
Wherein the transparent conductive substrate is glass or a flexible substrate; the conductive film is an inorganic conductive polymer or an organic conductive polymer.
Wherein the flexible substrate is a polyester imide compound or a polyththalimide compound; the inorganic conductive polymer is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conducting polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
The other technical scheme of the invention is as follows: a preparation method of a perovskite solar cell with a high filling factor comprises the following steps: step S1, cleaning a transparent conductive substrate, arranging a conductive film on the front surface of the transparent conductive substrate, and drying the transparent conductive substrate by adopting an infrared heating mode to obtain a dry transparent conductive substrate; step S2, treating the dried transparent conductive substrate with ultraviolet ozone for 5-10min, and then preparing a hole transport layer on the back of the transparent conductive substrate by adopting a spin coating mode; step S3, preparing a perovskite thin film on the hole transport layer; the specific process is that lead iodide is evaporated on the hole transport layer in vacuum or spin-coated in a vacuum environment to obtain a lead iodide thin film with the thickness of 120-250 nm; then, a methylamine lead halide solution or a formamidine lead halide solution with the concentration of 40-80mg/ml is spin-coated on the lead iodide thin film, and the perovskite thin film is obtained after annealing treatment, wherein the annealing temperature is 50-70 ℃, and the annealing time is 1-3 h;
step S4, preparing an interface passivation layer on the perovskite film by adopting alkali metal halide or alkaline earth metal halide; the thickness of the interface passivation layer is 1-5 nm; alkali metal halideThe rate of evaporation of the compound or alkaline earth metal halide on the perovskite film is
Step S5, vacuum evaporating C on the interface passivation layer60Or a derivative thereof or PCBM to obtain an electron transport layer; the rate of vacuum evaporation is
The thickness of the electron transmission layer is 10-20 nm; step S6, evaporating a metal film on the electron transport layer in vacuum to obtain a cathode; the thickness of the metal film is 50-120nm, and the metal film is a gold film, a silver film, a copper film or an aluminum film; a high fill factor perovskite solar cell as described above is obtained.
The specific process of preparing the hole transport layer by adopting the spin coating manner in the step S2 is as follows: spin coating, blade coating, magnetron sputtering, vacuum evaporation coating, slit type continuous coating, spray coating or printing PEDOT (PSS) solution on a transparent conductive substrate; and then annealing at 100-130 deg.C for 10-20min to obtain the hole transport layer. When the spin coating process is adopted, the rotating speed of the transparent conductive substrate is 1000-;
wherein the process of cleaning the transparent conductive substrate in step S1 is: ethanol cleaning, acetone ultrasonic cleaning and deionized water ultrasonic cleaning; the square resistance of the conductive film is 15-30 omega, and the thickness of the conductive film is 80-140 nm.
Wherein the transparent conductive substrate is glass or a flexible substrate; the conductive film is an inorganic conductive polymer or an organic conductive polymer; the flexible substrate is a polyester imide compound or a polyththalimide compound; the inorganic conductive polymer is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conducting polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
The specific process of preparing the interface passivation layer on the perovskite thin film by using the alkali metal halide or the alkaline earth metal halide in the step S4 is as follows: by evaporation, spin coating, blade coating, and magnetic coatingAnd arranging alkali metal halide or alkaline earth metal halide on the perovskite thin film in any one mode of controlled sputtering, vacuum evaporation, slit type continuous coating, spraying or printing to form an interface passivation layer. When vacuum deposition is used, the rate of vacuum deposition is
Compared with the prior art, the invention has the beneficial effects that: the perovskite solar cell and the preparation method thereof solve the problem of high efficiency and large-area solar cell preparation, and are compared with a traditional spin-coating polystyrene hole blocking layer for preparing a planar heterojunction solar device; the interface passivation layer is prepared by any one of evaporation, spin coating, blade coating, magnetron sputtering, vacuum evaporation, slit type continuous coating, spraying or printing, and the electron transmission layer and the metal film are prepared by vacuum evaporation.
The interface passivation layer between the perovskite thin film and the electron transmission layer in the solar cell can passivate the surface defects of the perovskite and the transmission layer, prevent the interaction of undesirable molecules and the perovskite or the transmission layer, and simultaneously play a role in reducing the recombination of electrons and holes at the interface of the perovskite thin film and the electron transmission layer, thereby greatly reducing the recombination of current carriers. The principle is as follows: the interface passivation layer can allow photon-generated electrons to tunnel into the electron transport layer and prevent holes from entering the electron transport layer, so that the recombination of the electrons and the holes at the interface of the perovskite thin film and the electron transport layer is reduced. The working principle of the battery is as follows: visible light is incident to the perovskite light absorption layer thin film to generate photoproduction holes and electrons, the holes are collected by the transparent conducting substrate through the hole transport layer, and the photoproduction electrons tunnel through the interface passivation layer and are collected to the cathode through the electron transport layer.
Drawings
FIG. 1 is a schematic structural view of a perovskite solar cell of the present invention;
FIG. 2 is a J-V characteristic diagram of a solar cell obtained in example 1 of the present invention;
FIG. 3 is a J-V characteristic diagram of a solar cell obtained in example 2 of the present invention;
FIG. 4 is a J-V characteristic diagram of a solar cell obtained in example 3 of the present invention;
FIG. 5 is a J-V characteristic diagram of a solar cell obtained in comparative example of the present invention.
In the figure: 1 is a transparent conductive substrate; 2 is a hole transport layer; 3 is a perovskite thin film; 4 is an interface passivation layer; 5 is an electron transport layer; and 6 is a cathode.
Detailed Description
The technical solution of the present invention is further explained with reference to the accompanying drawings and specific embodiments.
The invention provides a perovskite solar cell with a high filling factor, which comprises a transparent conductive substrate 1, a hole transport layer 2, a perovskite thin film 3, an interface passivation layer 4, an electron transport layer 5 and a cathode 6 from bottom to top in sequence as shown in figure 1. Wherein the front surface of the transparent conductive substrate 1 is provided with a conductive film; sunlight irradiates on the conductive film.
The transparent conductive substrate 1 is glass or a flexible substrate, wherein the flexible substrate is a polyester imide compound or a polyththalimide compound.
The conductive film adopts inorganic conductive polymer or organic conductive polymer; wherein the inorganic conductive polymer is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conductive polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
The interface passivation layer 4 is alkali metal halide or alkaline earth metal halide, the alkali metal halide or alkaline earth metal halide is evaporated on the perovskite film 3 in vacuum, and the thickness of the interface passivation layer is 1-5 nm.
In a preferred embodiment of the present invention, the alkali metal halide is lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, lithium chloride, sodium chloride, potassium chloride, rubidium chloride, cesium chloride, lithium bromide, sodium bromide, potassium bromide, rubidium bromide, cesium bromide, lithium iodide, sodium iodide, potassium iodide, rubidium iodide or cesium iodide. The alkaline earth metal halide is beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, beryllium chloride, magnesium chloride, calcium chloride, strontium chloride, barium chloride, beryllium bromide, magnesium bromide, calcium bromide, strontium bromide, barium bromide, beryllium iodide, magnesium iodide, calcium iodide, strontium iodide or barium iodide.
The electron transport layer 5 is C60Or PCBM film, or C60A derivative film of (1); c is to be60PCBM or C60The derivative of (2) is vacuum evaporated on the interface passivation layer 4, and the thickness of the derivative is 10-20 nm.
The cathode 6 is a metal film, specifically a gold film, a silver film, a copper film or an aluminum film; and (3) performing vacuum evaporation on the electron transport layer 5 to obtain a corresponding metal film with the thickness of 50-120 nm.
The hole transport layer 2 is prepared by spin coating a PEDOT (PSS) solution on the back surface of the transparent conductive substrate 1 and annealing.
The perovskite film 3 adopts methylamine lead halide or formamidine lead halide; wherein methylamine lead halide is CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3、CH3NH3PbBr3-xIx、CH3NH3PbBr3-xClxOr CH3NH3PbCl3-xIx(ii) a The formamidine lead halide is HC (NH)2)2PbBr3、HC(NH2)2PbCl3、HC(NH2)2PbI3、HC(NH2)2PbBr3-XIx、HC(NH2)2PbCl3-XI or HC (NH)2)2PbBr3-XClx。
The invention also provides a preparation method of the perovskite solar cell with the high filling factor, which comprises the following steps:
and step S1, cleaning the transparent conductive substrate 1 by sequentially adopting three modes of ethanol cleaning, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, arranging a conductive film on the front surface of the transparent conductive substrate 1, and drying the transparent conductive substrate 1 by adopting an infrared heating mode to obtain the dried transparent conductive substrate 1.
Preferably, the transparent conductive substrate 1 is a glass or flexible substrate; wherein the flexible substrate is a polyimide compound or a polyesterimide compound.
Preferably, the conductive film is an inorganic conductive polymer or an organic conductive polymer; the inorganic conductive polymer is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conductive polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
Preferably, the conductive thin film has a sheet resistance of 15 to 30 Ω and a thickness of 80 to 140 nm.
Step S2, treating the dried transparent conductive substrate obtained in the step S1 by ultraviolet ozone for 5-10min, and then preparing a hole transport layer on the back of the transparent conductive substrate 1 by adopting a spin coating, blade coating, magnetron sputtering, vacuum evaporation, slit type continuous coating, spraying or printing mode; specifically, the PEDOT, namely PSS solution is coated on a transparent conductive substrate in a spin mode, magnetron sputtering, vacuum evaporation, slit type continuous coating, spin coating, spray coating, soaking or blade coating mode; and then annealing treatment is carried out, wherein the annealing temperature is 100-130 ℃, and the annealing time is 10-20min, so as to obtain the hole transport layer 2. When the spin coating process is adopted, the rotation speed of the transparent conductive substrate is 1000-
Step S3, preparing a perovskite thin film 3 on the hole transport layer; transferring the hole transport layer 2 obtained in the step S2 into a vacuum chamber, and performing vacuum evaporation on lead iodide on the hole transport layer or spin coating the lead iodide in a vacuum environment to obtain a lead iodide thin film with the thickness of 120-; and then, spin-coating methylamine lead halide solution or formamidine lead halide solution with the concentration of 40-80mg/ml on the lead iodide thin film, and carrying out annealing treatment to obtain the perovskite thin film 3, wherein the annealing temperature is 50-70 ℃, and the annealing time is 1-3 h.
Preferably, the methylamine lead halide solution is methylamine lead iodide solution, and the formamidine lead halide solution is formamidine lead iodide solution.
Step S4, arranging alkali metal halide or alkaline earth metal halide on the perovskite film by any one processing mode of evaporation, spin coating, blade coating, magnetron sputtering, vacuum evaporation, slit type continuous coating, spraying or printing to obtain an interface passivation layer; the thickness of the interface passivation layer is 1-5 nm. Specifically, in the preferred embodiment of the present invention, the step is to vacuum-deposit an alkali metal halide or an alkaline earth metal halide on the perovskite thin film 3 obtained in step S3 to obtain an interface passivation layer 4; the thickness of the interface passivation layer 4 is 1-5 nm. When vacuum deposition is used, the rate of vacuum deposition is
Step S5, vacuum evaporating C on the interface passivation layer60PCBM or C60To obtain the electron transport layer 5; the rate of vacuum evaporation is
The thickness of the electron transport layer 5 is 10-20 nm;
step S6, evaporating a metal film on the electron transport layer 5 in vacuum to obtain a cathode 6; the thickness of the metal film is 50-120nm, and the metal film is a gold film, a silver film, a copper film or an aluminum film; a high fill factor perovskite solar cell as described above is obtained.
The specific embodiment of the invention is as follows:
example 1
The perovskite solar cell is prepared, and the structure is as follows: transparent conductive substrate/ITO (130nm)/CH3NH3PbI3(400nm)/RbF (3nm)/C60(10nm)/BCP (6nm)/Ag (120 nm); the specific process is as follows:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 15 omega, and the film thickness is 130 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 6min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at the rotating speed of 1000r/min for 33 s; the annealing temperature is controlled at 100 ℃, the annealing time is controlled at 30 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 120nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating 40mg/mL methylamine iodide isopropanol solution on a lead iodide film at 1500rpm for 10 seconds; the annealing temperature is controlled at 70 ℃, the annealing time is controlled at 2 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, performing vacuum evaporation on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; vacuum evaporation rate of
The thickness of the film is 1 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C60 on the interface passivation layer obtained in the step S5 in a vacuum mode to obtain an electron transport layer; the evaporation rate is
The film thickness is 10nm, then BCP material is evaporated, and the evaporation rate is
The film thickness is 6nm。
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 120 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
The solar cell obtained in this example had J-V characteristics as shown in fig. 2, and the cell efficiency was 13.8%.
Example 2
The perovskite solar cell is prepared, and the structure is as follows: transparent conductive substrate/ITO (120nm)/CH3NH3PbI3(400nm)/CsF (3nm)/PCBM (10nm)/BCP (6nm)/Au (100 nm); the specific process is as follows:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 20 omega, and the film thickness is 120 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 6min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at a rotation speed of 1500r/min for 55 s; the annealing temperature is controlled at 130 ℃, the annealing time is controlled at 12 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 220nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine iodide isopropanol solution with the concentration of 80mg/mL on a lead iodide film, wherein the rotation speed is 2100rpm, and the time is 30 seconds; the annealing temperature is controlled at 70 ℃, the annealing time is controlled at 1 hour, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, evaporating and plating lithium rubidium on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 5 nm; and obtaining an interface passivation layer after completion.
Step S6, carrying out vacuum evaporation on the PCBM on the interface passivation layer obtained in the step S5 to obtain an electron transmission layer; the evaporation rate is
The film thickness is 15nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 10 nm.
Step S7, performing vacuum evaporation gold plating on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 100 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
The solar cell obtained in this example had J-V characteristics as shown in fig. 3, and the cell efficiency was 15.6%.
Example 3
The perovskite solar cell is prepared, and the structure is as follows: transparent conductive substrate/ITO (80nm)/CH3NH3PbI3(400nm)/CsF (3nm)/PCBM (20nm)/BCP (6nm)/Al (50 nm); the specific process is as follows:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 30 omega, and the film thickness is 80 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 10min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at the rotating speed of 2500r/min for 30 s; the annealing temperature is controlled at 110 ℃, the annealing time is controlled at 10 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the prepared hole transport layer in step S2 to a vacuum chamber for evaporationLead iodide with a controlled rate
The thickness of the film is 250nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine iodide isopropanol solution with the concentration of 60mg/mL on a lead iodide film, wherein the rotation speed is 2500rpm, and the time is 25 seconds; the annealing temperature is controlled at 65 ℃, the annealing time is controlled at 1.5 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, carrying out magnetron sputtering of cesium fluoride on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 4 nm; and obtaining an interface passivation layer after completion.
Step S6, carrying out vacuum evaporation on the PCBM on the interface passivation layer obtained in the step S5 to obtain an electron transmission layer; the evaporation rate is
The film thickness is 20nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 2 nm.
Step S7, aluminum is evaporated in vacuum on the electron transport layer obtained in step S6 to obtain a cathode; the thickness of the cathode is 100 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
The solar cell obtained in this example had J-V characteristics as shown in fig. 4, and the cell efficiency was 13.4%.
Comparative examples
The perovskite solar cell is prepared, and the structure is as follows: transparent conductive substrate/ITO (100nm)/CH3NH3PbI3(400nm)/CsF (3nm)/C60Derivative (18nm)/BCP (6nm)/Cu (60 nm); the specific process is as follows:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 25 omega, and the film thickness is 100 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 7min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at the rotation speed of 1200r/min for 45 s; the annealing temperature is controlled at 100 ℃, the annealing time is controlled at 18 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 130nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine iodide isopropanol solution with the concentration of 70mg/mL on a lead iodide film, wherein the rotation speed is 1500rpm, and the time is 10 seconds; the annealing temperature is controlled at 70 ℃, the annealing time is controlled at 3 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, evaporating a chlorobenzene solution of polystyrene in vacuum on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; vacuum evaporation rate of
The thickness of the film is 5 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Derivative to obtain an electron transport layer; the evaporation rate is
The film thickness is 18nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 8 nm.
Step S7, carrying out vacuum copper evaporation on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 60 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
The solar cell obtained in this example had J-V characteristics as shown in fig. 5, and the cell efficiency was 12.3%.
Examples 1-3 compared to the comparative example, the efficiency of the solar cell using the interface passivation layer of alkali metal fluoride was higher than that of the PS solution. As can be seen from fig. 5, the filling factors of examples 1 to 3 and comparative example are: 76.7%, 78.6%, 73.6%, 71.4%; the solar cell prepared by the method has high filling factor.
The invention also includes the following embodiments: a
Example 4
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 28 omega, and the film thickness is 140 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 8min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at the substrate rotation speed of 2200r/min for 40 s; the annealing temperature is controlled at 115 ℃, the annealing time is controlled at 12 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 140nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine iodide isopropanol solution with the concentration of 65mg/mL on a lead iodide film, wherein the rotation speed is 2100rpm, and the time is 12 seconds; the annealing temperature is controlled at 55 ℃, the annealing time is controlled at 3 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, performing spin coating of sodium fluoride on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 4 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 15nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 6 nm.
Step S7, performing vacuum evaporation gold plating on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 50 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 5
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 28 omega, and the film thickness is 140 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 9min by using ultraviolet ozone; coating a PH1000 solution on a transparent conductive substrate in a blade mode, wherein the rotating speed of the substrate is 1200r/min, and the time is 32 s; the annealing temperature is controlled at 122 ℃, the annealing time is controlled at 15 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead bromide, and controlling the speed at
The thickness of the film is 150nm, and the lead bromide film is obtained after the film is finished.
Step S4, spin-coating formamidine bromine isopropanol solution with the concentration of 80mg/mL on a lead bromide film, wherein the rotation speed is 2500rpm and the time is 10 seconds; the annealing temperature is controlled at 61 ℃, the annealing time is controlled at 2.6 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, coating lithium fluoride on the perovskite thin film obtained in the step S4 in a scraping mode to obtain an interface passivation layer; the thickness of the film is 2 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 10nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 2 nm.
Step S7, carrying out vacuum copper evaporation on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 61 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 6
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 23 omega, and the film thickness is 95 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 7min by using ultraviolet ozone; carrying out magnetron sputtering on a PH1000 solution on a transparent conductive substrate for 41 s; the annealing temperature is controlled at 100 ℃, the annealing time is controlled at 18 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead chloride, and controlling the speed at
The thickness of the film is 220nm, and the lead chloride film is obtained after the film is finished.
Step S4, spin-coating a formamidine isopropyl alcohol solution with the concentration of 46mg/mL on a lead chloride film at the rotation speed of 1750rpm for 12 seconds; the annealing temperature is controlled at 64 ℃, the annealing time is controlled at 1.4 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, continuously coating sodium bromide on the perovskite thin film obtained in the step S4 in a slit mode to obtain an interface passivation layer; the thickness of the film is 1 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 14nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 8 nm.
Step S7, aluminum is evaporated in vacuum on the electron transport layer obtained in step S6 to obtain a cathode; the thickness of the cathode is 78 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 7
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 23 omega, and the film thickness is 95 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 6min by using ultraviolet ozone; vacuum evaporating a PH1000 solution on a transparent conductive substrate for 51 s; the annealing temperature is controlled at 122 ℃, the annealing time is controlled at 23 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 230nm, and the lead iodide film is obtained after the completion.
Step S4, spin-coating methylamine iodide isopropanol solution with the concentration of 77mg/mL on a lead iodide film, wherein the rotation speed is 2500rpm, and the time is 30 seconds; the annealing temperature is controlled at 70 ℃, the annealing time is controlled at 1 hour, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, spraying cesium chloride on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 4 nm; and obtaining an interface passivation layer after completion.
Step S6, carrying out vacuum evaporation on the PCBM on the interface passivation layer obtained in the step S5 to obtain an electron transmission layer; the evaporation rate is
The film thickness is 15nm, and then BCP material is evaporatedThe evaporation rate is
The film thickness was 10 nm.
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 110 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 8
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 30 omega, and the film thickness is 80 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 5min by using ultraviolet ozone; spraying a PH1000 solution on a transparent conductive substrate for 60 s; the annealing temperature is controlled at 101 ℃, the annealing time is controlled at 20 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead bromide, and controlling the speed at
The thickness of the film is 210nm, and the lead bromide film is obtained after the film is finished.
Step S4, spin-coating methylamine bromide isopropanol solution with the concentration of 55mg/mL on a lead bromide film, wherein the rotating speed is 2000rpm, and the time is 21 seconds; the annealing temperature is controlled at 68 ℃, the annealing time is controlled at 2.3 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, printing beryllium bromide on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 3 nm; and obtaining an interface passivation layer after completion.
Step S6, carrying out vacuum evaporation on the PCBM on the interface passivation layer obtained in the step S5 to obtain an electron transmission layer; the evaporation rate is
The film thickness is 11nm, and then BCP material is evaporated at the evaporation rate of
The film thickness was 4 nm.
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 100 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 9
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 30 omega, and the film thickness is 80 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 9min by using ultraviolet ozone; printing a PH1000 solution on a transparent conductive substrate for 55 s; the annealing temperature is controlled at 125 ℃, the annealing time is controlled at 17 minutes, and the hole transport layer is obtained after the completion.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead chloride, and controlling the speed at
The thickness of the film is 180nm, and the lead chloride film is obtained after the film is finished.
Step S4, spin-coating methylamine isopropyl alcohol solution with the concentration of 58mg/mL on a lead chloride film, wherein the rotation speed is 2150rpm, and the time is 22 seconds; the annealing temperature is controlled at 50 ℃, the annealing time is controlled at 3 hours, and the perovskite thin film with the thickness of 400nm is obtained after the annealing is finished.
Step S5, evaporating calcium chloride on the perovskite thin film obtained in the step S4 in vacuum to obtain an interface passivation layer; vacuum evaporation rate of
The thickness of the film is 3 nm; and obtaining an interface passivation layer after completion.
Step S6, carrying out vacuum evaporation on the PCBM on the interface passivation layer obtained in the step S5 to obtain an electron transmission layer; the evaporation rate is
The film thickness is 12nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 3 nm.
Step S7, performing vacuum evaporation gold plating on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 120 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 10
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 20 omega, and the film thickness is 95 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 6min by using ultraviolet ozone; continuously coating a PH1000 solution on a transparent conductive substrate in a slit mode for 35 s; the annealing temperature is controlled at 115 ℃, the annealing time is controlled at 11 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 140nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine bromide isopropanol solution with the concentration of 68mg/mL on a lead iodide film, wherein the rotation speed is 2300rpm, and the time is 10 seconds; the annealing temperature is controlled at 53 ℃, the annealing time is controlled at 1 hour, and the perovskite CH with the thickness of 400nm is obtained after the annealing is finished3NH3PbBr3-xIxA film.
Step S5, performing vacuum evaporation on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 2 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Derivative to obtain an electron transport layer; the evaporation rate is
The film thickness is 10nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 2 nm.
Step S7, performing vacuum evaporation gold plating on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 60 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 11
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 18 omega, and the film thickness is 95 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 5min by using ultraviolet ozone; spin-coating a PH1000 solution on a transparent conductive substrate at a substrate rotation speed of 1600r/min for 20 s; the annealing temperature is controlled at 115 ℃, the annealing time is controlled at 11 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead bromide, and controlling the speed at
The thickness of the film is 120nm, and the lead bromide film is obtained after the film is finished.
Step S4, spin-coating 40mg/mL methylamine isopropyl alcohol solution on a lead iodide film at 1600rpm for 18 seconds; the annealing temperature is controlled at 63 ℃, the annealing time is controlled at 2.6 hours, and the perovskite CH with the thickness of 350nm is obtained after the annealing is finished3NH3PbBr3-xClxA film.
Step S5, evaporating calcium iodide on the perovskite thin film obtained in the step S4 in vacuum to obtain an interface passivation layer; the thickness of the film is 1 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Derivative to obtain an electron transport layer; the evaporation rate is
The film thickness is 16nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 4 nm.
Step S7, carrying out vacuum copper evaporation on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 110 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 12
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 22 omega, and the film thickness is 130 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 10min by using ultraviolet ozone; spraying a PH1000 solution on a transparent conductive substrate for 56 s; the annealing temperature is controlled at 125 ℃, the annealing time is controlled at 12 minutes, and the hole transport layer is obtained after the completion.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 135nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating methylamine isopropyl alcohol solution with concentration of 50mg/mL on lead iodide film, with rotation speed of 1950rpm and time of 15 seconds; the annealing temperature is controlled at 53 ℃, the annealing time is controlled at 1.3 hours, and the perovskite CH with the thickness of 450nm is obtained after the annealing is finished3NH3PbCl3-xIxA film.
Step S5, performing magnetron sputtering of calcium bromide on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 2 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 18nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 3 nm.
Step S7, carrying out vacuum copper evaporation on the electron transport layer obtained in the step S6 to obtain a cathode; the thickness of the cathode is 55 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 13
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 20 omega, and the film thickness is 120 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 8min by using ultraviolet ozone; spraying AL4083 solution on transparent conductive substrate for 45 s; the annealing temperature is controlled at 105 ℃, the annealing time is controlled at 13 minutes, and the hole transport layer is obtained after the completion.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead bromide, and controlling the speed at
The thickness of the film is 146nm, and the lead bromide film is obtained after the film is finished.
Step S4, spin-coating formamidine isopropyl alcohol solution with the concentration of 60mg/mL on a lead iodide film, wherein the rotating speed is 2400rpm, and the time is 16 seconds; the annealing temperature is controlled at 55 ℃, the annealing time is controlled at 2.1 hours, and perovskite HC (NH) with the thickness of 430nm is obtained after the annealing is finished2)2PbBr3-XClxA film.
Step S5, performing vacuum evaporation of magnesium fluoride on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 3 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 16nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 7 nm.
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 80 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 14
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 20 omega, and the film thickness is 120 nm. Wherein the transparent conductive substrate is glass, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 8min by using ultraviolet ozone; spraying AL4083 solution on transparent conductive substrate for 45 s; the annealing temperature is controlled at 105 ℃, the annealing time is controlled at 13 minutes, and the hole transport layer is obtained after the completion.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 120nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating formamidine isopropyl alcohol solution with the concentration of 60mg/mL on a lead iodide film, wherein the rotating speed is 2400rpm, and the time is 16 seconds; the annealing temperature is controlled at 55 ℃, the annealing time is controlled at 2.1 hours, and perovskite HC (NH) with the thickness of 430nm is obtained after the annealing is finished2)2PbCl3-XAnd (I) film.
Step S5, evaporating lithium iodide on the perovskite thin film obtained in the step S4 in vacuum to obtain an interface passivation layer; the thickness of the film is 4 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 12nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 8 nm.
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 80 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 15
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 15 omega, and the film thickness is 140 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 8min by using ultraviolet ozone; coating an AL4083 solution on a transparent conductive substrate in a scraping way for 45 s; the annealing temperature is controlled at 105 ℃, the annealing time is controlled at 13 minutes, and the hole transport layer is obtained after the completion.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 250nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating formamidine bromine isopropanol solution with the concentration of 60mg/mL on a lead iodide film, wherein the rotating speed is 2400rpm, and the time is 16 seconds; the annealing temperature is controlled at 55 ℃, the annealing time is controlled at 2.1 hours, and perovskite HC (NH) with the thickness of 450nm is obtained after the annealing is finished2)2PbBr3-XIxA film.
Step S5, performing vacuum evaporation of rubidium bromide on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 5 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 20nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 10 nm.
Step S7, evaporating silver on the electron transport layer obtained in the step S6 in vacuum to obtain a cathode; the thickness of the cathode is 100 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Example 16
The perovskite solar cell is prepared by the following specific steps:
and step S1, cleaning the transparent conductive substrate pre-etched with the conductive film, sequentially cleaning the transparent conductive substrate by using ethanol, acetone ultrasonic cleaning and deionized water ultrasonic cleaning, and drying the cleaned transparent conductive substrate under an infrared lamp, wherein the conductive film on the transparent conductive substrate is used as an anode layer of the solar cell, the square resistance of the conductive film is 20 omega, and the film thickness is 110 nm. Wherein the transparent conductive substrate is a flexible substrate, and the conductive film is indium tin oxide.
Step S2, treating the transparent conductive substrate treated in the step S1 for 8min by using ultraviolet ozone; printing AL4083 solution on a transparent conductive substrate at 1800r/min for 40 s; the annealing temperature is controlled at 105 ℃, the annealing time is controlled at 12 minutes, and the hole transport layer is obtained after the annealing is finished.
Step S3, transferring the hole transport layer prepared in step S2 to a vacuum chamber for evaporation of lead iodide, and controlling the speed at
The thickness of the film is 250nm, and the lead iodide film is obtained after the film is finished.
Step S4, spin-coating formamidine iodine isopropanol solution with the concentration of 60mg/mL on a lead iodide film, wherein the rotating speed is 2400rpm, and the time is 17 seconds; the annealing temperature is controlled at 59 ℃, the annealing time is controlled at 2 hours, and perovskite HC (NH) with the thickness of 390nm is obtained after the annealing is finished2)2PbI3A film.
Step S5, performing vacuum evaporation of potassium chloride on the perovskite thin film obtained in the step S4 to obtain an interface passivation layer; the thickness of the film is 4 nm; and obtaining an interface passivation layer after completion.
Step S6, evaporating C on the interface passivation layer obtained in step S5 in vacuum60Obtaining an electron transport layer; the evaporation rate is
The film thickness is 18nm, then BCP material is evaporated, and the evaporation rate is
The film thickness was 8 nm.
Step S7, aluminum is evaporated in vacuum on the electron transport layer obtained in step S6 to obtain a cathode; the thickness of the cathode is 110 nm; and finally obtaining the target organic-inorganic hybrid perovskite solar cell device.
Claims (10)
1. The perovskite solar cell with the high filling factor is characterized in that a transparent conductive substrate (1), a hole transport layer (2), a perovskite thin film (3), an interface passivation layer (4), an electron transport layer (5) and a cathode (6) are sequentially arranged from bottom to top;
the interface passivation layer (4) is alkali metal halide or alkaline earth metal halide which is vacuum-evaporated on the perovskite film (3), and the thickness of the interface passivation layer is 1-5 nm;
the electron transmission layer (5) is C evaporated on the interface passivation layer (4) in vacuum60The thickness of the electron transport layer (5) is 10-20 nm;
the cathode (6) is a metal film which is vacuum-evaporated on the electron transport layer (5), and the thickness of the metal film is 50-120 nm;
the perovskite film (3) adopts methylamine lead halide or formamidine lead halide;
the transparent conductive substrate (1) is provided with a conductive film.
2. The high fill factor perovskite solar cell of claim 1, wherein the alkali metal halide is lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, lithium chloride, sodium chloride, potassium chloride, rubidium chloride, cesium chloride, lithium bromide, sodium bromide, potassium bromide, rubidium bromide, cesium bromide, lithium iodide, sodium iodide, potassium iodide, rubidium iodide or cesium iodide; the alkaline earth metal halide is beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, beryllium chloride, magnesium chloride, calcium chloride, strontium chloride, barium chloride, beryllium bromide, magnesium bromide, calcium bromide, strontium bromide, barium bromide, beryllium iodide, magnesium iodide, calcium iodide, strontium iodide or barium iodide.
3. The high fill factor perovskite solar cell of claim 1, wherein the metal thin film is a gold thin film, a silver thin film, a copper thin film, or an aluminum thin film.
4. The high fill factor perovskite solar cell according to claim 1, characterized in that the transparent conductive substrate (1) is a glass or flexible substrate; the conductive film is an inorganic conductive material or an organic conductive polymer.
5. The high fill factor perovskite solar cell of claim 4, wherein the flexible substrate is a polyesterimide or a polyththalimide; the inorganic conductor is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conducting polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
6. A preparation method of a perovskite solar cell with a high filling factor is characterized by comprising the following steps:
step S1, cleaning a transparent conductive substrate, arranging a conductive film on the front surface of the transparent conductive substrate, and drying the transparent conductive substrate by adopting an infrared heating mode to obtain a dry transparent conductive substrate;
step S2, treating the dried transparent conductive substrate with ultraviolet ozone for 5-10min, and then preparing a hole transport layer on the back of the transparent conductive substrate;
step S3, preparing a perovskite thin film on the hole transport layer;
step S4, preparing an interface passivation layer on the perovskite film by adopting alkali metal halide or alkaline earth metal halide; the thickness of the interface passivation layer is 1-5 nm;
step S5, vacuum evaporating C on the interface passivation layer60Or a derivative thereof or PCBM to obtain an electron transport layer; the rate of vacuum evaporation is
The thickness of the electron transmission layer is 10-20 nm;
step S6, evaporating a metal film on the electron transport layer in vacuum to obtain a cathode; the thickness of the metal film is 50-120nm, and the metal film is a gold film, a silver film, a copper film or an aluminum film; a high fill factor perovskite solar cell as claimed in claim 1 is obtained.
7. The method for preparing a high-fill-factor perovskite solar cell as claimed in claim 6, wherein the specific process for preparing the hole transport layer in the step S2 is as follows: PSS solution is arranged on a transparent conductive substrate; and then annealing at 100-130 deg.C for 10-20min to obtain the hole transport layer.
8. The method for preparing a high fill factor perovskite solar cell as claimed in claim 6, wherein the step S1 of cleaning the transparent conductive substrate is as follows: ethanol cleaning, acetone ultrasonic cleaning and deionized water ultrasonic cleaning; the square resistance of the conductive film is 15-30 omega, and the thickness of the conductive film is 80-140 nm.
9. The method for preparing a high fill factor perovskite solar cell according to any one of claims 6 or 8, wherein the transparent conductive substrate is glass or a flexible substrate; the conductive film is an inorganic conductive substance or an organic conductive polymer; wherein the flexible substrate is a polyester imide compound or a polyththalimide compound; the inorganic conductor is indium tin oxide, zinc oxide, tin oxide, gold, copper, silver or zinc; the organic conducting polymer is polythiophene, sodium polyvinylbenzene sulfonate or polyaniline.
10. The method for preparing the perovskite solar cell with the high filling factor as claimed in claim 6, wherein the specific process of preparing the interface passivation layer on the perovskite thin film by using the alkali metal halide or the alkaline earth metal halide in the step S4 is as follows: and arranging alkali metal halide or alkaline earth metal halide on the perovskite film by adopting any one of evaporation, spin coating, blade coating, magnetron sputtering, vacuum evaporation, slit type continuous coating, spraying or printing to form an interface passivation layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810850253 | 2018-07-28 | ||
| CN2018108502536 | 2018-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109360889A CN109360889A (en) | 2019-02-19 |
| CN109360889B true CN109360889B (en) | 2020-04-28 |
Family
ID=65349840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810892472.0A Active CN109360889B (en) | 2018-07-28 | 2018-08-07 | Perovskite solar cell with high filling factor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109360889B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904330B (en) * | 2019-02-28 | 2022-04-15 | 深圳市先进清洁电力技术研究有限公司 | Based on passivation material Me4Method for preparing tin-lead hybrid perovskite solar cell by NBr |
| CN110190194A (en) * | 2019-04-23 | 2019-08-30 | 武汉工程大学 | Using Potassium Hexafluorophosphate film as the perovskite photovoltaic cell of interface passivation layer |
| TWI705576B (en) * | 2019-05-30 | 2020-09-21 | 國立臺灣大學 | Perovskite solar cell and method of manufacturing the same |
| CN111223990A (en) * | 2019-11-29 | 2020-06-02 | 西南石油大学 | Inverted perovskite solar cell containing alkali metal halide hole modification layer and preparation method |
| CN111106247B (en) * | 2019-12-05 | 2023-04-28 | 天合光能股份有限公司 | Organic-inorganic hybrid perovskite solar cell and preparation method thereof |
| CN111283215B (en) | 2020-02-24 | 2021-06-11 | 北京科技大学 | Method for preparing oxygen-free passivated titanium and titanium alloy powder products by gas-solid fluidization |
| CN111769197B (en) * | 2020-07-17 | 2022-10-21 | 吉林大学 | Perovskite solar cell and preparation method thereof |
| CN112466963B (en) * | 2020-11-25 | 2022-12-02 | 隆基绿能科技股份有限公司 | Silicon carbide photovoltaic device |
| CN113421979B (en) * | 2021-07-08 | 2022-09-23 | 合肥工业大学 | Perovskite thin film vapor phase passivation method and photovoltaic device based on same |
| WO2023143207A1 (en) * | 2022-01-27 | 2023-08-03 | 西安隆基乐叶光伏科技有限公司 | Solar cell and preparation method therefor |
| WO2023161798A1 (en) * | 2022-02-23 | 2023-08-31 | King Abdullah University Of Science And Technology | High-efficiency perovskite-based device with metal fluoride interlayer and method |
| GB2618521A (en) | 2022-04-20 | 2023-11-15 | Imperial College Innovations Ltd | Perovskite solar cell with interface layer |
| CN115881832B (en) * | 2022-08-03 | 2023-08-15 | 中国科学技术大学 | Solar cell passivation structure and preparation method |
| CN115884611B (en) * | 2023-02-23 | 2023-06-27 | 北京科技大学 | CsPbI 3 Perovskite solar cell and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013110201A1 (en) * | 2012-01-27 | 2013-08-01 | Hany Aziz | Photovoltaic device and method of manufacture |
| KR20140146006A (en) * | 2013-06-14 | 2014-12-24 | 주식회사 엘지화학 | Organic photovoltaic cell and method for manufacturing the same |
| CN105870341B (en) * | 2016-04-20 | 2019-11-08 | 西安交通大学 | A kind of method and solar cell device improving perovskite crystal growth quality |
| CN106848076B (en) * | 2017-01-06 | 2018-07-17 | 西安交通大学 | A kind of organo-mineral complexing perovskite LED device and preparation method thereof |
| CN108258128B (en) * | 2018-01-17 | 2020-09-04 | 杭州纤纳光电科技有限公司 | Perovskite solar cell with interface modification layer and preparation method thereof |
-
2018
- 2018-08-07 CN CN201810892472.0A patent/CN109360889B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109360889A (en) | 2019-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109360889B (en) | Perovskite solar cell with high filling factor and preparation method thereof | |
| CN105789444B (en) | A kind of perovskite solar cell and preparation method thereof based on vacuum evaporatation | |
| CN112331740B (en) | Preparation method of inorganic perovskite solar cell adopting spin coating-evaporation two-step method | |
| CN109904330B (en) | Based on passivation material Me4Method for preparing tin-lead hybrid perovskite solar cell by NBr | |
| CN106953014A (en) | A kind of hybrid solar cell structure and preparation method using CuPc as hole transmission layer | |
| CN108447995A (en) | Precursor solution and preparation method thereof, the preparation of solar cell electron transfer layer and solar cell | |
| WO2023169068A1 (en) | Organic photoelectric device based on metal-induced organic interface layer, and preparation method | |
| CN116171053B (en) | Full perovskite laminated solar cell and preparation method thereof | |
| CN110224069B (en) | Perovskite solar cell with waterproof function and preparation method thereof | |
| Chakaroun et al. | ITO/Au/ITO multilayer electrodes for CuPc/C60 solar cells | |
| CN108365105B (en) | Perovskite solar cell and preparation method thereof | |
| WO2020077710A1 (en) | Polymer-metal chelate cathode interface material and use thereof | |
| CN116056537A (en) | Preparation of high-efficiency quasi-two-dimensional perovskite solar cell by rapid-drying and slow-growth deposition method | |
| KR20220145308A (en) | Semi-transparent perovskite solar cell having amorphous oxide top electrode with high transparency and Method for manufacturing the same | |
| CN113488594A (en) | Composite thin film electrode based on low-cost metal and transparent conductive oxide and application thereof in perovskite photoelectric device | |
| CN209401654U (en) | A kind of plane perovskite solar battery | |
| CN115843187B (en) | Composite electron transport layer and preparation method thereof, and solar cell and preparation method thereof | |
| CN111162180A (en) | Large-area perovskite solar cell | |
| CN219478460U (en) | Perovskite solar cell based on double hole transport layers | |
| CN112909180B (en) | Inverted perovskite type solar cell device and preparation method and application thereof | |
| RU2686860C1 (en) | Charging-transporting layer for solar batteries | |
| CN116867338A (en) | Method for preparing perovskite solar cell by using BCP chlorobenzene anti-solvent | |
| Lal | CH3NH3PbI3: A Potential Candidate for Perovskite Based Solar Cells | |
| CN117750855A (en) | Preparation method of hole transport layer, perovskite crystal silicon laminated solar cell and preparation method | |
| CN117062451A (en) | Polymer interface modified inverted perovskite solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240429 Address after: Room 301, Building 14, Phase I, Yungu, West Fengxi New City, Xixian New District, Xi'an City, Shaanxi Province, 710075 Patentee after: Xi'an Tianjiao New Energy Co.,Ltd. Country or region after: China Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University Country or region before: China |