CN109360857A - A kind of degradable self-supporting film transistor device and preparation method thereof - Google Patents
A kind of degradable self-supporting film transistor device and preparation method thereof Download PDFInfo
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- CN109360857A CN109360857A CN201810928903.4A CN201810928903A CN109360857A CN 109360857 A CN109360857 A CN 109360857A CN 201810928903 A CN201810928903 A CN 201810928903A CN 109360857 A CN109360857 A CN 109360857A
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000010408 film Substances 0.000 claims abstract description 67
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 229920005615 natural polymer Polymers 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 29
- 239000002253 acid Substances 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 7
- 229920001661 Chitosan Polymers 0.000 claims description 7
- 229920000609 methyl cellulose Polymers 0.000 claims description 7
- 239000001923 methylcellulose Substances 0.000 claims description 7
- 239000000661 sodium alginate Substances 0.000 claims description 7
- 235000010413 sodium alginate Nutrition 0.000 claims description 7
- 229940005550 sodium alginate Drugs 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 230000020176 deacylation Effects 0.000 claims description 3
- 238000005947 deacylation reaction Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229960000583 acetic acid Drugs 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 108010022355 Fibroins Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920000954 Polyglycolide Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000747 poly(lactic acid) Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004633 polyglycolic acid Substances 0.000 description 1
- 239000004626 polylactic acid Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of degradable self-supporting film transistor devices, mainly include self-supporting dielectric layer, semiconductor active layer, source electrode, drain electrode and gate electrode；It is characterized by: degradable self-supporting film transistor device uses the natural polymers film with ionic conduction characteristic as self-supporting dielectric layer, it is sequentially depositing semiconductor active layer and coplanar source electrode, drain electrode and gate electrode again on self-supporting dielectric layer, wherein semiconductor active layer is arranged between source electrode, drain electrode.The invention has the advantages that (1) film transistor device uses the dielectric layer with support performance to simplify the material structure of device without using additional substrate.(2) natural polymers film is low in cost, has preferable stability under room temperature conventional environment.By controlling its adjustable decomposition rate in particular surroundings of thin film composition structure, to realize the controllable film transistor device of degradation rate.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of degradable self-supporting film transistor device
And preparation method thereof.
Background technique
Currently, each class of electronic devices is in order to play consistently function, usually by non-degradable, highly stable, even
The base material and electronic component of possible toxic (such as GaAs) are fabricated.Thin film transistor (TFT) is a kind of most basic electronics
Component is used widely in fields such as random access memory, FPD, photoelectric sensors.
As electronics technology of preparing develops with rapid changepl. never-ending changes and improvementsly, there are damage or superseded electronic device to be lost all the time
It abandons, this will lead to serious environmental pollution.On the other hand, with the development and application of implantable medical device, bio-compatible and
It can occur to degrade in specific time and the film transistor device being metabolized by human body has great demand space.Cause
This, designs and prepares degradable, environmental-friendly, hypotoxicity film transistor device in safe electronic equipment, degradable environment
Sensor and there is very important application value from fields such as disappearance implantable medical devices.
Traditional thin film transistor (TFT) is by semiconductor active layer 2, dielectric layer 3 and metal electrode layer (4. source electrodes；5. electric leakage
Pole；6. gate electrode) it is sequentially deposited on sustainable substrate material 1 in the form of a film and manufactured, see attached drawing 1.Its work is former
Reason is the conductive capability that semiconductor channel is controlled using the electric field strength perpendicular to semiconductor channel for being applied to metal gates,
To realize electrical signal amplification and on-off action.If the material used for preparing can melt under certain environmental conditions, that
It will realize degradable film transistor device.Degradable substrate material reported at present include fibroin, cellulose,
Polycaprolactone, polyglycolic acid, polylactic acid and poly lactic coglycolic acid etc.；Degradable semiconductor material includes that silicon is received
Rice film, amorphous indium gallium zinc, organic polymer semiconductor etc.；Degradable dielectric layer includes magnesia, aluminium oxide etc.；
Degradable electrode material includes magnesium, iron etc..
In conclusion there is an urgent need in the art to develop, a kind of structure is simple, preparation is easy and has excellent performance degradable thin
Film transistor device.
Summary of the invention
The present invention devises a kind of degradable self-supporting film transistor device, structure include semiconductor active layer,
Metal electrode layer and dielectric layer with support function, the device architecture is simple, and preparation process is easy, and has and good partly lead
Bulk channel performance of control.Device material therefor has good biocompatibility, can degrade in certain circumstances.
The technical solution adopted by the invention is as follows: a kind of degradable self-supporting film transistor device, main includes certainly
Support dielectric layer, semiconductor active layer, source electrode, drain electrode and gate electrode；It is characterized by: degradable self-supporting film is brilliant
Body tube device uses the natural polymers film with ionic conduction characteristic as self-supporting dielectric layer, is situated between in self-supporting
Semiconductor active layer and coplanar source electrode, drain electrode and gate electrode are sequentially depositing in electric layer again, wherein semiconductor active layer
It is arranged between source electrode, drain electrode.
Natural polymers of the present invention include methylcellulose, sodium alginate, chitosan etc., self-supporting film
Preparation using solution apply drying means.
Semiconductor active layer of the present invention can be amorphous oxide semiconductor, such as indium gallium zinc oxide, zinc oxide, oxygen
Change indium zinc etc., deposition uses magnetically controlled sputter method；It is also possible to organic semiconductor simultaneously, as pentacene, 3- hexyl thiophene polymerize
Object etc., deposition use solution spin coating method.
Source electrode, drain electrode and gate electrode of the present invention can use conductive oxide material, such as tin indium oxide, deposition
Using magnetically controlled sputter method；Part metals material, such as iron, magnesium can also be used, deposition is steamed using vacuum thermal evaporation or electron beam
Hair technology.
The graphical of semiconductor active layer and electrode layer of the present invention is realized using mask plate method.
The preparation method of the degradable self-supporting film transistor device of one kind of the present invention, it is characterised in that method
Steps are as follows:
(1) 1-10g natural polymers powder is dissolved in 10-100ml dilute acid soln, stirring is stood；Naturally
High molecular polymer includes methylcellulose, sodium alginate, chitosan, and dilute acid soln includes acetic acid, hydrochloric acid, sulfuric acid, and diluted acid is molten
Liquid concentration is 1%-10%；Suitable natural polymers acid solution is poured into special mold, it is dry at 50-200 DEG C
Dry film forming, self-supporting film is with a thickness of 0.001-100mm；
(2) magnetically controlled sputter method deposited amorphous oxide semiconductor active layer on above-mentioned self-supporting film, deposition are used
With a thickness of 10-1000nm；Or solution spin-coating method Deposit organic semiconductor active layer on above-mentioned self-supporting film is used, deposition
With a thickness of 0.1-10 μm；
(3) metallic nickel mask of the installation with special pierced pattern on the self-supporting film for deposited semiconductor active layer
Plate using magnetically controlled sputter method conductive oxide electrode layer, or uses vacuum thermal evaporation methods deposit metal electrodes layer；
Electrode film is respectively formed source electrode, drain electrode and gate electrode, source electrode, drain electrode and grid electricity by the hollow-out part of mask plate
Extremely in one plane；Electrode film thickness is 10-1000nm；
(4) by above step, self-supporting film transistor device is obtained.The device is put into dilute acid soln, such as
Acetic acid, hydrochloric acid, sulfuric acid etc., it is degradable to may be implemented device.It is degradable by controlling the adjustable degradation rate of acid concentration
Time is 1-5000min.
Wherein methylcellulose degree of polymerization 50-1000；Sodium alginate degree of polymerization 10-1000, chitosan degree of polymerization 10-
1000, deacylation rate 50%-95%.
Wherein the channel width between source electrode, drain electrode is 100-5000 μm, and channel length is 10-1000 μm；According to
Different needs can also prepare the thin film transistor (TFT) with multiple planar gate electrodes, gate electrode number by designing mask plate
It can be 1-100.
The natural polymers film that the present invention uses has splendid film forming characteristics, can play device branch completely
Support effect, without using additional substrate.In addition, such natural polymers film has good ionic conduction characteristic,
Good channel performance of control can be realized under lower grid voltage by the ion electrostatic coupling effect at interface, dropped simultaneously
Low grid and semiconductor channel to alignment request.Source electrode, drain and gate can be made conplane according to this characteristic
Device architecture avoids Multiple depositions and lithography alignment technique.Finally, such natural polymers film is in room temperature routine
There is preferable stability under environment, but can be completely dissolved in dilute acid soln, the complete drop of entire device can be realized based on this
Solution.
The invention has the advantages that (1) film transistor device uses the dielectric layer with support performance, without using volume
Outer-lining bottom simplifies the material structure of device.(2) dielectric layer of the device has ionic conduction characteristic, and transistor gate is half-and-half
The regulation of conductor channel electric conductivity is realized by the ion electrostatic coupling effect at interface.This characteristic allows device to exist
Good channel performance of control is realized under lower grid voltage.Meanwhile can reduce grid and semiconductor channel to alignment request,
Realize that source electrode, drain and gate in conplane device architecture, avoid Multiple depositions and lithography alignment technique, it is greatly simple
The preparation process of device is changed.(3) natural polymers film is low in cost, has under room temperature conventional environment preferable
Stability.By controlling its adjustable rate of dissolution in diluted acid of thin film composition structure, to realize that degradation rate is controllable
Film transistor device.
Detailed description of the invention
Fig. 1 is conventional thin film transistor organigram of the invention.
Fig. 2 is self-supporting film transistor configurations schematic diagram of the invention.
01, substrate material in the figure；02. semiconductor active layer；03. dielectric layer；1. self-supporting dielectric layer；2. dielectric layer
In moveable ion；3. semiconductor active layer；4. source electrode；5. drain electrode；6. gate electrode.
Embodiment
As shown in Fig. 2, the present invention is such to work and implementation, a kind of degradable self-supporting film transistors
Part mainly includes self-supporting dielectric layer 1, semiconductor active layer 3, source electrode 4, drain electrode 5 and gate electrode 6；It is characterized by: can
The self-supporting film transistor device of degradation has the natural polymer of ionic conduction characteristic using ion 2 moveable in dielectric layer
Sub- thin polymer film is sequentially depositing semiconductor active layer 3 again on self-supporting dielectric layer 1 and puts down altogether as self-supporting dielectric layer 1
Source electrode 4, drain electrode 5 and the gate electrode 6 in face, wherein semiconductor active layer 3 is arranged between source electrode 4, drain electrode 5.
The preparation method of the degradable self-supporting film transistor device of one kind of the present invention, it is characterised in that method
Steps are as follows:
1-10g natural polymers powder is dissolved in 10-100ml dilute acid soln, stirring is stood.Natural polymer
Sub- polymer includes methylcellulose (degree of polymerization 50-1000), sodium alginate (degree of polymerization 10-1000), the chitosan (degree of polymerization
10-1000, deacylation rate 50%-95%) etc., dilute acid soln includes acetic acid, hydrochloric acid, sulfuric acid etc., and dilute acid soln concentration is 1%-
10%.Suitable natural polymers acid solution is poured into the mold of speciality, in 50-200 DEG C of drying and forming-film, self-supporting
Film thickness is 0.001-100mm.
Using magnetically controlled sputter method on above-mentioned self-supporting film deposited amorphous oxide semiconductor active layer, deposition thickness
For 10-1000nm；Or use solution spin-coating method Deposit organic semiconductor active layer, deposition thickness on above-mentioned self-supporting film
It is 0.1-10 μm.
Installation has the metallic nickel mask plate of special pierced pattern on the self-supporting film for deposited semiconductor active layer,
Using magnetically controlled sputter method conductive oxide electrode layer, or use vacuum thermal evaporation methods deposit metal electrodes layer.Electricity
Very thin films are respectively formed source electrode, drain and gate by the hollow-out part of mask plate, and source-drain electrode and grid are the same as in one plane.
Electrode film thickness is 10-1000nm.Channel width between source-drain electrode is 100-5000 μm, and channel length is 10-1000 μ
m.According to different needs, the thin film transistor (TFT) with multiple planar gate electrodes can also be prepared by designing mask plate, grid electricity
Pole number can be 1-100.
By above step, self-supporting film transistor device is obtained.The device is put into dilute acid soln, such as vinegar
Acid, hydrochloric acid, sulfuric acid etc., it is degradable to may be implemented device.By controlling the adjustable degradation rate of acid concentration, when degradable
Between be 1-5000min.
The natural polymers film that the present invention uses has splendid film forming characteristics, can play device branch completely
Support effect, without using additional substrate.In addition, such natural polymers film has good ionic conduction characteristic,
Good channel performance of control can be realized under lower grid voltage by the ion electrostatic coupling effect at interface, dropped simultaneously
Low grid and semiconductor channel to alignment request.Source electrode, drain and gate can be made conplane according to this characteristic
Device architecture avoids Multiple depositions and lithography alignment technique.Finally, such natural polymers film is in room temperature routine
There is preferable stability under environment, but can be completely dissolved in dilute acid soln, the complete drop of entire device can be realized based on this
Solution.
Claims (8)
1. a kind of degradable self-supporting film transistor device mainly includes self-supporting dielectric layer, semiconductor active layer, source electricity
Pole, drain electrode and gate electrode；It is characterized by: degradable self-supporting film transistor device, which uses, has ionic conduction characteristic
Natural polymers film as self-supporting dielectric layer, be sequentially depositing semiconductor active layer again on self-supporting dielectric layer
With coplanar source electrode, drain electrode and gate electrode, wherein semiconductor active layer is arranged between source electrode, drain electrode.
2. the degradable self-supporting film transistor device of one kind according to claim 1, it is characterised in that: described natural
High molecular polymer includes methylcellulose, sodium alginate, chitosan, and the preparation of self-supporting film applies drying side using solution
Method.
3. the degradable self-supporting film transistor device of one kind according to claim 1, it is characterised in that: described partly to lead
Body active layer or amorphous oxide semiconductor, deposition use magnetically controlled sputter method；Or organic semiconductor, such as pentacene, 3-
Hexyl thiophene polymer, deposition use solution spin coating method.
4. the degradable self-supporting film transistor device of one kind according to claim 1, it is characterised in that: the source electricity
Pole, drain electrode and gate electrode use conductive oxide material, and deposition uses magnetically controlled sputter method；Or use part metals material
Material, deposition use vacuum thermal evaporation or electron beam evaporation technique.
5. the degradable self-supporting film transistor device of one kind according to claim 1, it is characterised in that: semiconductor has
Active layer and the graphical of electrode layer are realized using mask plate method.
6. a kind of preparation method of degradable self-supporting film transistor device according to claim 1, feature exist
It is as follows in method and step:
(1) 1-10g natural polymers powder is dissolved in 10-100ml dilute acid soln, stirring is stood；Natural polymer
Sub- polymer includes methylcellulose, sodium alginate, chitosan, and dilute acid soln includes acetic acid, hydrochloric acid, sulfuric acid, and dilute acid soln is dense
Degree is 1%-10%；Suitable natural polymers acid solution is poured into special mold, is dried at 50-200 DEG C
Film, self-supporting film is with a thickness of 0.001-100mm；
(2) magnetically controlled sputter method deposited amorphous oxide semiconductor active layer, deposition thickness on above-mentioned self-supporting film are used
For 10-1000nm；Or use solution spin-coating method Deposit organic semiconductor active layer, deposition thickness on above-mentioned self-supporting film
It is 0.1-10 μm；
(3) metallic nickel mask plate of the installation with special pierced pattern on the self-supporting film for deposited semiconductor active layer,
Using magnetically controlled sputter method conductive oxide electrode layer, or use vacuum thermal evaporation methods deposit metal electrodes layer；Electricity
Very thin films are respectively formed source electrode, drain electrode and gate electrode, source electrode, drain electrode and gate electrode by the hollow-out part of mask plate
With in one plane；Electrode film thickness is 10-1000nm；
(4) by above step, self-supporting film transistor device is obtained.
7. the preparation method of the degradable self-supporting film transistor device of one kind according to claim 6, feature exist
In: wherein methylcellulose degree of polymerization 50-1000；Sodium alginate degree of polymerization 10-1000, chitosan degree of polymerization 10-1000, deacylation
Rate 50%-95%.
8. the preparation method of the degradable self-supporting film transistor device of one kind according to claim 6, feature exist
In: wherein the channel width between source electrode, drain electrode is 100-5000 μm, and channel length is 10-1000 μm；According to different
It needs, the thin film transistor (TFT) with multiple planar gate electrodes can also be prepared by designing mask plate, gate electrode number can be
1-100.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335820A (en) * | 2019-07-11 | 2019-10-15 | 吉林建筑大学 | P-type thin film crystal tube preparation method in protein substrate |
| CN110865110A (en) * | 2019-11-18 | 2020-03-06 | 中山大学 | Coplanar gate oxide thin film transistor biosensor and preparation method thereof |
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| CN113555287A (en) * | 2021-07-22 | 2021-10-26 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
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| CN110865110A (en) * | 2019-11-18 | 2020-03-06 | 中山大学 | Coplanar gate oxide thin film transistor biosensor and preparation method thereof |
| CN113299832A (en) * | 2021-05-20 | 2021-08-24 | 北京大学 | Transient field effect transistor based on carbon nano tube, preparation method and integrated device |
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