CN109346923A - GaN base laser and preparation method thereof - Google Patents
GaN base laser and preparation method thereof Download PDFInfo
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- CN109346923A CN109346923A CN201811367240.XA CN201811367240A CN109346923A CN 109346923 A CN109346923 A CN 109346923A CN 201811367240 A CN201811367240 A CN 201811367240A CN 109346923 A CN109346923 A CN 109346923A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The present invention relates to a kind of GaN base lasers and preparation method thereof, it includes the N-shaped limiting layer for being stacked and placed on substrate surface, N-shaped ducting layer, active area, p-type ducting layer, p-type limiting layer and P type contact layer, it is characterized in that, further include, N-shaped hole blocking layer between the N-shaped ducting layer and the active area, p-type electronic barrier layer between the p-type ducting layer and the p-type limiting layer, the p-type ducting layer, P-type electron barrier layer, p-type limiting layer and p-type contact layer constitute ridge platform structure.Laser of the present invention forms high potential barrier between p-type ducting layer and limiting layer, effectively prevents the position other than electronics leakage to active area close to the area p；And high potential barrier is formed between N-shaped ducting layer and active area, to effectively prevent the position other than holes-leakage to active area close to the area n, the threshold current of GaN base ultraviolet laser is reduced, improves power and photoelectric conversion efficiency.
Description
Technical field
The present invention relates to optoelectronic device technology fields, and in particular to a kind of GaN base laser and preparation method thereof.
Background technique
As third generation semiconductor, gallium nitride (GaN) and its series material (including aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, nitrogen
Change indium), spectral region wide (cover from ultraviolet to infrared full-wave section) big with its forbidden bandwidth, heat-resisting quantity and corrosion resistance
It is good, there is huge application value in photoelectronics and microelectronics domain, therefore its emission wavelength can cover and entirely may be used
Light-exposed spectrum has very big adjustability；In addition, GaN base laser has luminous efficiency high, thermal conductivity is high, chemical stabilization
The good feature of property, can be widely applied to industrial processing field, therapeutic treatment field, military field and theoretical research field.But
So far, prepare comparative maturity to the research of GaN base laser is royal purple optical band, and ultraviolet laser also in
Conceptual phase.
Laser drives electrons and holes injection laser on the direction perpendicular to junction plane by applying applying bias
Structure, most of carrier into active area carries out compound and generates light, and another part carrier is due near ultraviolet laser
Quantum Well is leaked into than shallower outside Quantum Well in device structure, causes the loss of carrier, so as to cause laser performance decline.
Feedback cavity is formed by the cleavage mirror surface at side both ends, so that the light that electron-hole recombinations generate is in intracavitary continuous resonance and shape
The standing wave of mirror surface is parallel at wavefront.The gain of light in active area has been more than the light loss in laser structure, will generate and put
Big stimulated radiation, laser will be emitted from mirrored ends.
Summary of the invention
For the technical problems in the prior art, the main purpose of the present invention is to provide a kind of GaN base lasers
And preparation method thereof.Based on above-mentioned purpose, the present invention is at least provided the following technical solutions:
GaN base laser comprising be stacked and placed on the N-shaped limiting layer, N-shaped ducting layer, active area, p-type waveguide of substrate surface
Layer, p-type limiting layer and P type contact layer, the N-shaped hole blocking layer between the N-shaped ducting layer and the active area, position
P-type electronic barrier layer between the p-type ducting layer and the p-type limiting layer, the p-type ducting layer, p-type electronic blocking
Layer, p-type limiting layer and p-type contact layer constitute ridge platform structure.
Preferably, a surface phasmon effect layer is provided on the light-emitting surface of the laser.
Preferably, the surface phasmon effect layer include a single-layer graphene layer, a Pt nanoparticle layers and
One single-layer graphene layer.
Preferably, the N-shaped hole blocking layer adulterates Si, and the p-type electronic barrier layer adulterates Mg, the N-shaped hole
Barrier layer with a thickness of 5~30nm, the p-type electronic barrier layer with a thickness of 5~30nm.
Preferably, the material of main part of the N-shaped hole blocking layer includes AlGaN or InAlGaN, the N-shaped hole barrier
The atom number percentage of Al is 5%~25% in the AlGaN material of layer；The InAlGaN of the N-shaped hole blocking layer
The atom number percentage that the atom number percentage of In is 0~15%, Al in material is 20%~40%；
Preferably, the material of main part of the p-type electronic barrier layer includes AlGaN or InAlGaN, the p-type electronic blocking
The atom number percentage of Al is 10%~30% in the AlGaN material of layer；In the InAlGaN material of the p-type electronic barrier layer
The atom number percentage that the atom number percentage of In is 0~15%, Al is 0~40%.
Preferably, the material of main part of the N-shaped limiting layer is the AlGaN of Al atom number percentage 2%~10%；n
The material of main part of type ducting layer is the InGaN of GaN or In atom number percentage 0~2%；The material of main part of p-type ducting layer is
The InGaN of GaN or In atom number percentage 0.1%~2%；The material of main part of p-type limiting layer is Al atom number percentage
5%~12% AlGaN.
Preferably, the laser emission wavelength is 390~520nm.
Preferably, the light-emitting surface is the face perpendicular to the substrate surface.
The preparation method of GaN base laser comprising following steps:
Successively growing n-type limiting layer, N-shaped ducting layer, N-shaped hole blocking layer, active area, the p-type waveguide in GaN substrate
Layer, p-type electronic barrier layer, p-type limiting layer and P type contact layer；
P-type ducting layer, p-type electronic barrier layer described in etched portions, p-type limiting layer and P type contact layer form ridge knot
Structure；
It is laid with one layer of graphene layer in the light-emitting surface of the laser, Pt nanoparticle is sputtered on graphene layer, then
One layer of graphene is re-layed, to form surface phasmon effect layer.
The N-shaped hole blocking layer adulterates Si, and the p-type electronic barrier layer adulterates Mg, the master of the N-shaped hole blocking layer
Body material includes AlGaN or InAlGaN, and the atom number percentage of Al is 5%~25% in the AlGaN material；It is described
The atom number percentage that the atom number percentage of In is 0~15%, Al in InAlGaN material is 20%~40%；The p
The material of main part of type electronic barrier layer includes AlGaN or InAlGaN, and the atom number percentage of Al is 10% in AlGaN material
~30%；The atom number percentage that the atom number percentage of In is 0~15%, Al in InAlGaN material is 0~40%.
Compared with prior art, the present invention at least has the following beneficial effects:
1, GaN base laser of the invention is inserted into p-type electronic barrier layer between p-type ducting layer and limiting layer, in N-shaped wave
N-shaped hole blocking layer is inserted between conducting shell and active area；High potential barrier can be formed between p-type ducting layer and limiting layer, effectively
Prevent the position other than electronics leakage to active area close to the area p；And high potential barrier is formed between N-shaped ducting layer and active area,
To effectively prevent the position other than holes-leakage to active area close to the area n, the threshold current of GaN base ultraviolet laser is reduced,
Improve power and photoelectric conversion efficiency；
2, GaN base laser of the invention is to p-type electronic barrier layer and N-shaped hole blocking layer carries out p-type respectively and N-shaped is mixed
It is miscellaneous, caused by minimizing the setting of p-type electronic barrier layer/N-shaped hole blocking layer, to hole/electron injection shadow
It rings；And its p-type electronic barrier layer and N-shaped hole blocking layer select suitable thickness and material component, may make electronics and sky
Cave is limited in active area well and carries out recombination luminescence；Meanwhile it can avoid the evil of device performance caused by increasing excessive resistance
Change.
3, the present invention is directed to the specific laser emission wavelength of its GaN base laser, introduces surface etc. from sharp in its light-emitting surface
First effect layer reinforces plasma resonance coupling, and significantly increases the transmitting of laser, and defect is inhibited to emit, and reduces laser
Threshold value improves laser-quality.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of GaN base laser of the present invention.
Fig. 2 is GaN base laser light-emitting surface of the present invention visual angle schematic diagram.
Fig. 3 is the vertical view visual angle schematic diagram of GaN base laser of the present invention.
Fig. 4 is GaN base laser the schematic diagram of the section structure of the present invention.
Fig. 5 is the energy band schematic diagram of GaN base laser of the present invention.
Detailed description of the invention: 01 is n-type electrode, and 02 is GaN substrate, and 03 is N-shaped limiting layer, and 04 is N-shaped ducting layer, and 05 is N-shaped
Hole blocking layer, 06 is active area, and 07 is p-type ducting layer, and 08 is p-type electronic barrier layer, and 09 is p-type limiting layer, and 10 be that p-type connects
Contact layer, 11 be p-electrode, and 12 be ridge platform structure, and 13 be surface phasmon effect layer, and 14 be bilayer graphene, and 15 be Pt nanometers
Particle layer.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
As shown in Figures 1 to 4, the invention discloses a kind of GaN base lasers, including are stacked and are being formed in GaN substrate 02 just
N-shaped limiting layer 03, N-shaped ducting layer 04, active area 06, p-type ducting layer 07, p-type limiting layer 09 and P type contact layer 10 on face,
Wherein, there are also a N-shaped hole blocking layers 05 between N-shaped ducting layer 04 and active area 06, limit in p-type ducting layer 07 and p-type
There are also a p-type electronic barrier layer 08, p-type ducting layer, p-type electronic barrier layer, p-type limiting layer and p-type contacts between layer 09
Layer constitutes the ridge platform structure 12 of its laser.A surface phasmon effect layer 13 is provided on the light-emitting surface of the laser.
The present invention is inserted into p-type electronic barrier layer between p-type ducting layer and limiting layer, N-shaped ducting layer and active area it
Between be inserted into N-shaped hole blocking layer；High potential barrier can be formed between p-type ducting layer and limiting layer, effectively electronics leakage is prevented to arrive
Close to the position in the area p other than active area；And high potential barrier is formed between N-shaped ducting layer and active area, to effectively prevent empty
Cave leaks into the position other than active area close to the area n, reduces the threshold current of GaN base ultraviolet laser, improves power and photoelectricity
Transfer efficiency.
In an embodiment of the present invention, above-mentioned p-type ducting layer non-impurity-doped.
In an embodiment of the present invention, N-shaped hole blocking layer adulterates Si, and p-type electronic barrier layer adulterates Mg, so as to as far as possible
Caused by reducing the setting of p-type electronic barrier layer/N-shaped hole blocking layer, to the influence of hole/electron injection.
The material of main part of above-mentioned N-shaped hole blocking layer includes AlGaN or InAlGaN；Wherein, in AlGaN material Al original
Sub- number percentage is 5%~25%；The atom number percentage of In is the atom number of 0~15%, Al in InAlGaN material
Percentage is 20%~40%；N-shaped hole blocking layer with a thickness of 5~30nm.By reasonably adjusting material component and thickness,
It may make that hole is limited in active area well and carries out recombination luminescence；Meanwhile it can avoid device caused by increasing excessive resistance
The deterioration of performance.
The active area is InGaN/GaN multi-quantum well luminescence layer, InGaN and GaN in the InGaN/GaN multiple quantum wells
Thickness be respectively 2nm and 10nm, periodicity 5.
Above-mentioned GaN substrate with a thickness of 0.5~2 μm；N-shaped limiting layer with a thickness of 0.5~2 μm；The thickness of N-shaped ducting layer
It is 0.03~0.15 μm；P-type ducting layer with a thickness of 0.03~0.15 μm；P-type limiting layer with a thickness of 0.05~0.12 μm；p
Type contact layer with a thickness of 0.02~0.05 μm.
The material of main part of above-mentioned N-shaped limiting layer is the AlGaN of Al atom number percentage 2%~10%；N-shaped ducting layer
Material of main part is the InGaN of GaN or In atom number percentage 0~2%；The material of main part of p-type ducting layer is GaN or In atom
The InGaN of number percentage 0.1%~2%；The material of main part of p-type limiting layer is Al atom number percentage 5%~12%
AlGaN；The material of main part of P type contact layer is GaN.
In an embodiment of the present invention, a surface phasmon effect layer is provided on the light-emitting surface of laser, this swashs
The light-emitting surface of light device is the face perpendicular to its substrate.The surface phasmon effect layer is to be clamped with pair of Pt nanoparticle layers 15
The sandwich of layer graphene 14.
Based on the GaN base laser, the invention also discloses the preparation methods of above-mentioned GaN base laser, wherein the nitridation
The specific preparation of gallium base laser includes the following steps:
Step 1 utilizes metalorganic vapor phase chemical deposition successively growing n-type limiting layer 03, n on gallium nitride substrate 02
Type ducting layer 04, N-shaped hole blocking layer 05, Quantum well active district 06, p-type ducting layer 07, p-type electronic barrier layer 08, p-type limitation
Layer 09, P type contact layer 10.
Step 2 passes through photoetching and dry etch process, etched portions p-type ducting layer, p-type electronic barrier layer, p-type limitation
Layer and P type contact layer, etching stopping is in the surface of p-type ducting layer 07, to form the ridge platform structure of laser；
Step 3 prepares p-electrode 11 in the ridge platform structure that etching is formed, and is then thinned, cleans GaN substrate, GaN's
The back side prepares n-type electrode 01.
Step 4, the light-emitting surface that the single-layer graphene synthesized by chemical vapour deposition technique is transferred to the laser, then
Using radio-frequency magnetron sputter method, control sputtering chamber pressure is in 2.0Pa, and sputtering power 100W, sputtering time is 150 seconds, at it
The surface of single-layer graphene sputters a Pt nanoparticle, retransfers one layer of single-layer graphene later in the table of Pt nanoparticle layers
Face is laid with a surface phasmon effect layer in the light-emitting surface of its laser.
In this embodiment, gallium nitride substrate 02 with a thickness of 1 μm；The material of N-shaped limiting layer 03 is AlGaN, wherein Al
Atom number percentage be 8%, this layer with a thickness of 1 μm；The material of N-shaped ducting layer 04 is InGaN, wherein the atom of In
Number percentages be 0~2%, this layer with a thickness of 0.12 μm；The material of N-shaped hole blocking layer 05 is AlGaN, wherein the atom of Al
Number percentage be 23%, this layer with a thickness of 0.01 μm；The sub- trap of Quantum well active district 06 is sent out using InGaN/GaN multiple quantum wells
Photosphere, the thickness of InGaN and GaN is respectively 2nm and 10nm, periodicity 5 in the InGaN/GaN multiple quantum wells；Wherein p-type
The material of ducting layer 07 be InGaN, wherein the atom number percentage of In be 0~2%, this layer with a thickness of 0.1 μm；P-type electricity
The material on sub- barrier layer 08 be AlGaN, wherein the atom number percentage of Al be 25%, this layer with a thickness of 0.02 μm；P-type limit
The material of preparative layer 09 be AlGaN, wherein the atom number percentage of Al be 8%, this layer with a thickness of 0.6 μm；P type contact layer 10
Material be GaN, this layer with a thickness of 0.04 μm.The material of p-electrode 11 is Ni (15nm)/Au (50nm)；The material of n-electrode 01
For Ti (50nm)/Pt (50nm)/Au (100nm), to form good Ohmic contact.
As shown in figure 5, the energy band diagram of the GaN base laser for the present embodiment, it can be seen from the figure that due to this reality
It applies and joined N-shaped hole blocking layer 05 and p-type electronic barrier layer 08 in the structure of example, therefore, limited in p-type ducting layer 07 and p-type
High potential barrier can be formed between preparative layer 09, effectively prevent the position other than electronics leakage to active area close to the area p；In N-shaped waveguide
High potential barrier can be formed between layer 04 and Quantum well active district 06, is effectively prevented other than holes-leakage to active area close to the area n
Power and photoelectric conversion efficiency are improved so as to reduce the threshold current of GaN base laser in position.
Laser emission wavelength of the invention is between 390~520nm, due to InGaN/GaN multi-quantum well active region and Pt
Enhance Laser emission as suitable metal and inhibits the defect associated transmissions of active area, and graphene can convert induction
Plasmon propagates photon by Pt particle scattering on the surface and eventually leads to photoemission enhancing, so being added
Surface plasmons effect layer can effectively enhance laser intensity, improve laser-quality, reduce threshold current.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1.GaN base laser comprising be stacked and placed on the N-shaped limiting layer of substrate surface, N-shaped ducting layer, active area, p-type ducting layer,
P-type limiting layer and P type contact layer, which is characterized in that further include the n between the N-shaped ducting layer and the active area
Type hole blocking layer, the p-type electronic barrier layer between the p-type ducting layer and the p-type limiting layer, the p-type waveguide
Layer, P-type electron barrier layer, p-type limiting layer and p-type contact layer constitute ridge platform structure.
2. the laser according to claim 1, which is characterized in that be provided with a surface on the light-emitting surface of the laser
Phasmon effect layer.
3. the laser according to claim 2, which is characterized in that the surface phasmon effect layer includes a single layer stone
Black alkene layer, a Pt nanoparticle layers and a single-layer graphene layer.
4. the laser according to claim 1, which is characterized in that the N-shaped hole blocking layer adulterates Si, the p-type electricity
Mg is adulterated on sub- barrier layer, the N-shaped hole blocking layer with a thickness of 5~30nm, the p-type electronic barrier layer with a thickness of 5~
30nm。
5. one of -4 laser according to claim 1, which is characterized in that the material of main part of the N-shaped hole blocking layer
Including AlGaN or InAlGaN, in the AlGaN material of the N-shaped hole blocking layer atom number percentage of Al be 5%~
25%；The atom that the atom number percentage of In is 0~15%, Al in the InAlGaN material of the N-shaped hole blocking layer
Number percentage is 20%~40%；
The material of main part of the p-type electronic barrier layer includes AlGaN or InAlGaN, the AlGaN material of the p-type electronic barrier layer
The atom number percentage of middle Al is 10%~30%；The atom of In is hundreds of in the InAlGaN material of the p-type electronic barrier layer
Dividing the atom number percentage that ratio is 0~15%, Al is 0~40%.
6. one of -4 laser according to claim 1, which is characterized in that the material of main part of the N-shaped limiting layer is Al
The AlGaN of atom number percentage 2%~10%；The material of main part of N-shaped ducting layer be GaN or In atom number percentage 0~
2% InGaN；The material of main part of p-type ducting layer is the InGaN of GaN or In atom number percentage 0.1%~2%；P-type limit
The material of main part of preparative layer is the AlGaN of Al atom number percentage 5%~12%.
7. the laser emission wavelength is 390~520nm according to the laser of Claims 2 or 3.
8. laser according to claim 1 or 2, which is characterized in that the light-emitting surface is perpendicular to the substrate surface
Face.
The preparation method of 9.GaN base laser comprising following steps:
Successively growing n-type limiting layer, N-shaped ducting layer, N-shaped hole blocking layer, active area, p-type ducting layer, p-type in GaN substrate
Electronic barrier layer, p-type limiting layer and P type contact layer；
P-type ducting layer, p-type electronic barrier layer described in etched portions, p-type limiting layer and P type contact layer form ridge structure；
It is laid with one layer of graphene layer in the light-emitting surface of the laser, Pt nanoparticle is sputtered on graphene layer, is then repaved
If one layer of graphene, to form surface phasmon effect layer.
10. the preparation method according to claim 9, which is characterized in that the N-shaped hole blocking layer adulterates Si, the p-type
Electronic barrier layer adulterates Mg, and the material of main part of the N-shaped hole blocking layer includes AlGaN or InAlGaN, the AlGaN material
The atom number percentage of middle Al is 5%~25%；The atom number percentage of In is 0~15% in the InAlGaN material,
The atom number percentage of Al is 20%~40%；The material of main part of the p-type electronic barrier layer includes AlGaN or InAlGaN,
The atom number percentage of Al is 10%~30% in AlGaN material；The atom number percentage of In is 0 in InAlGaN material
The atom number percentage of~15%, Al are 0~40%.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| CN106410605A (en) * | 2016-12-01 | 2017-02-15 | 长春理工大学 | Semiconductor laser with enhanced luminous efficiency |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
-
2018
- 2018-11-16 CN CN201811367240.XA patent/CN109346923A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| CN106410605A (en) * | 2016-12-01 | 2017-02-15 | 长春理工大学 | Semiconductor laser with enhanced luminous efficiency |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
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