CN109346570A - The preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide - Google Patents
The preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide Download PDFInfo
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- CN109346570A CN109346570A CN201811194597.2A CN201811194597A CN109346570A CN 109346570 A CN109346570 A CN 109346570A CN 201811194597 A CN201811194597 A CN 201811194597A CN 109346570 A CN109346570 A CN 109346570A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 123
- 238000002360 preparation method Methods 0.000 title claims abstract description 43
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 141
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 129
- 239000004411 aluminium Substances 0.000 claims abstract description 115
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 115
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 115
- 239000000956 alloy Substances 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 74
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 51
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 31
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 6
- 239000011162 core material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 239000004904 UV filter Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide, belong to semi-conductor LED chips manufacturing technology field, the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide includes obtaining gallium oxide substrate, and aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate；Aluminium gallium nitride alloy material layer is made on the aluminium gallium nitride alloy buffer layer；Multi-quantum pit structure layer is made in the aluminium gallium nitride alloy material layer；Electronic barrier layer is made on the multi-quantum pit structure layer；P-type film layer is made, on the electronic barrier layer to prepare the deep ultraviolet LED vertical chip based on n-type doping gallium oxide.The present invention reaches without removing to the substrate material of LED epitaxial wafer, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
Description
Technical field
The invention belongs to semi-conductor LED chips manufacturing technology field, in particular to a kind of depth based on n-type doping gallium oxide
The preparation method of ultraviolet LED vertical chip.
Background technique
UV LED chip refers generally to centre of luminescence wavelength in 400nm LED below, when being greater than 320nm for emission wavelength
Be properly termed as near ultraviolet LED, and shorter than 320nm is deep ultraviolet LED.Deep ultraviolet LED can effective sterilizing, therefore it is wide
It is general to apply in application fields such as air cleaning, Water warfare, surface disinfections, such as apply net in refrigerator, air-conditioning, humidifier, air
Change device etc. is lived with mankind's high-quality in closely bound up equipment.
Currently, mainly being used in the epitaxy technology of deep ultraviolet LED for the prior art of deep ultraviolet LED chip
Nonconducting c surface sapphire is as substrate, during carrying out the preparation of vertical structure deep ultraviolet LED vertical chip, need from
The interface AlN/n-AlGaN is directly removed by AlN/Sapphire template.But since the growth temperature of n-AlGaN is much higher than
GaN material of the blue-ray LED as N-shaped conductive layer.Make also to be difficult to by laser lift-off technique at the interface AlN/n-AlGaN in this way
Place forms the temperature for being enough to allow AlGaN material to decompose vaporization, then leads to not the removing for completing AlN/Sapphire template, from
And the deep ultraviolet LED chip of vertical structure can not be prepared.
In conclusion there is can not be to the lining of LED epitaxial wafer in the technology of existing deep ultraviolet LED vertical chip
Bottom material is removed, it is difficult to prepare deep ultraviolet LED vertical chip.
Summary of the invention
The technical problem to be solved by the present invention is in the technology of existing deep ultraviolet LED chip, there is can not be right
The substrate material of LED epitaxial wafer is removed, it is difficult to the problem of preparing deep ultraviolet LED vertical chip.
In order to solve the above technical problems, the present invention provides a kind of vertical core of deep ultraviolet LED based on n-type doping gallium oxide
The preparation method of piece, the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide include obtaining gallium oxide
Substrate makes aluminium gallium nitride alloy buffer layer on the gallium oxide substrate；Aluminium gallium nitride alloy is made on the aluminium gallium nitride alloy buffer layer
Material layer；Multi-quantum pit structure layer is made in the aluminium gallium nitride alloy material layer；Electricity is made on the multi-quantum pit structure layer
Sub- barrier layer；P-type film layer is made, on the electronic barrier layer to prepare the deep ultraviolet based on n-type doping gallium oxide
LED vertical chip.
Further, the making material of the gallium oxide substrate is N-shaped gallium oxide material.
Further, the thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
Further, the making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material.
Further, the making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
Further, the emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
Further, the thickness range of the electronic barrier layer is greater than 1nm.
Further, the thickness range of the electronic barrier layer is less than 100nm.
Further, the making material of the p-type film layer is p-type gallium nitride material.
Further, the making material of the p-type film layer is p-type aluminium gallium nitride alloy material.
The utility model has the advantages that
The present invention provides a kind of preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide, passes through acquisition
After gallium oxide substrate, by the preparation of aluminium gallium nitride alloy buffer layer on the gallium oxide substrate；And it prepared by aluminium gallium nitride alloy material layer
On the aluminium gallium nitride alloy buffer layer；Again by the preparation of multi-quantum pit structure layer in the aluminium gallium nitride alloy material layer；It simultaneously will be electric
Sub- barrier layer preparation is on the multi-quantum pit structure layer；Then by the preparation of p-type film layer on the electronic barrier layer, to make
The deep ultraviolet LED vertical chip of the standby gallium oxide based on n-type doping described out.Make in this way in the gallium oxide based on n-type doping
Deep ultraviolet LED vertical chip in be disposed with p-type film layer, electronic barrier layer, multi-quantum pit structure layer, aluminium gallium nitride alloy material
The bed of material, aluminium gallium nitride alloy buffer layer and gallium oxide substrate then use conductive gallium oxide substrate as deep ultraviolet LED extension
The substrate of material, when so that preparing the deep ultraviolet LED vertical chip of the gallium oxide of vertical structure, without the lining to LED epitaxial wafer
Bottom material is removed.Then it overcomes and the technology removed to the substrate material of LED epitaxial wafer is needed to lack in the prior art
It falls into.It is removed to reach without the substrate material to LED epitaxial wafer, convenient for preparing the skill of deep ultraviolet LED vertical chip
Art effect.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention
Overall structure diagram；
Fig. 2 is a kind of preparation of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide provided in an embodiment of the present invention
The flow chart of method；
Fig. 3 is that a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
The formal dress schematic diagram of straight structure；
Fig. 4 is that a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
The upside-down mounting schematic diagram of straight structure.
Specific embodiment
The invention discloses a kind of preparation methods of deep ultraviolet LED vertical chip based on n-type doping gallium oxide, by obtaining
After taking gallium oxide substrate 600, by the preparation of aluminium gallium nitride alloy buffer layer 500 on the gallium oxide substrate 600；And by aluminium gallium nitride alloy
Material layer 400 is prepared on the aluminium gallium nitride alloy buffer layer 500；Multi-quantum pit structure layer 300 is prepared in the aluminium nitride again
In gallium material layer 400；Simultaneously by the preparation of electronic barrier layer 200 on the multi-quantum pit structure layer 300；Then by p-type film
100 preparation of layer is vertical come the deep ultraviolet LED for preparing the gallium oxide based on n-type doping on the electronic barrier layer 200
Chip.Make to be disposed with p-type film layer in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping in this way
100, electronic barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and oxidation
Gallium substrate 600 then uses substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material, so that preparation
When the deep ultraviolet LED vertical chip of the gallium oxide of vertical structure, removed without the substrate material to LED epitaxial wafer.Then
Overcome the technological deficiency for needing to be removed in the prior art to the substrate material of LED epitaxial wafer.To reached without pair
The substrate material of LED epitaxial wafer is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
In order to which the preparation method to the deep ultraviolet LED vertical chip provided by the invention based on n-type doping gallium oxide is done in detail
It describes in detail bright, to support the technical problems to be solved by the invention, in the following, in embodiment provided by the invention, n is based on to one kind first
The deep ultraviolet LED vertical chip device and preparation method of type doping gallium oxide elaborate, and are then describing one kind based on N-shaped
During deep ultraviolet LED vertical chip device and the preparation method of adulterating gallium oxide, this hair is further targetedly drawn
The preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide of bright offer, with reach it is complete, clear, understand
Purpose.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art's every other embodiment obtained belong to what the present invention protected
Range；Wherein "and/or" keyword involved in this implementation, indicate and or two kinds of situations, in other words, the present invention implement
A and/or B mentioned by example, illustrate two kinds of A and B, A or B situations, describe three kinds of states present in A and B, such as A and/or
B, indicate: only including A does not include B；Only including B does not include A；Including A and B.
Meanwhile in the embodiment of the present invention, when component is referred to as " being fixed on " another component, it can be directly at another
On component or there may also be components placed in the middle.When a component is considered as " connection " another component, it be can be directly
It is connected to another component or may be simultaneously present component placed in the middle.When a component is considered as " being set to " another group
Part, it, which can be, is set up directly on another component or may be simultaneously present component placed in the middle.Made in the embodiment of the present invention
Term "vertical", "horizontal", "left" and "right" and similar statement are merely for purposes of illustration, and are not intended to
The limitation present invention.
Embodiment one
Referring to Figure 1, Fig. 1 is that a kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention is vertical
The overall structure diagram of chip apparatus.A kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
Straight chip apparatus, the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide includes p-type film layer 100, electronics
Barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate
600。
For p-type film layer 100:
The making material of p-type film layer 100 can be p-type gallium nitride material；Or the production of the p-type film layer 100
Material can be p-type aluminium gallium nitride alloy material.
Referring to Figure 1, p-type gallium nitride material can refer to p-GaN, i.e. GaN material p-type doping, GaN (gallium nitride) room temperature
Wurtzite structure under normal pressure, GaN is the core material of light emitting diode in contemporary semiconductor illumination, industrially frequently with
MOCVD and HVPE equipment carrys out epitaxial growth.P-type aluminium gallium nitride alloy material can refer to p-AlGaN, i.e. AlGaN material p-type doping,
AlGaN (aluminium gallium nitride alloy) is suitable for preparing the photoelectric device of visible light to UV wavelength range.It is to adopt for p-type film layer 100
The extension scheme of LED is then depended on p-GaN or p-AlGaN.For selecting p-GaN or p-AlGaN, then will affect last
It is inverted structure or positive assembling structure used by LED chip.If the making material of p-type film layer 100 selects p-GaN, p-type
The one side of film layer 100 can be bonded to each other with the first side 210 of following electronic barrier layers 200, p-type film layer 100
Another side can be bonded to each other with conductive silicon substrate 700.If p-type film layer 100 grows p-AlGaN, Al in p-AlGaN
Component needs to be higher than the average Al component of Quantum Well MQWs in following multi-quantum pit structure layers 300.
For electronic barrier layer 200:
Electronic barrier layer 200 is provided with first side 210 and second side 220, and the electronic barrier layer 200 passes through described
First side 210 is arranged in the p-type film layer 100, and the first side 210 is located at the second side 220 and institute
It states between p-type film layer 100.Wherein, the thickness range of the electronic barrier layer 200 is from 1nm to 100nm.
Continuing with referring to Fig. 1, first side 210 and second side 220 can be upper and lower two in electronic barrier layer 200
A side.The first side 210 of electronic barrier layer 200 can be bonded to each other with aforementioned p-type film layer 100, electronic barrier layer 200
Second side 220 can be bonded to each other with the third side 310 of following multi-quantum pit structure layers 300 so that electronic barrier layer
200 between aforementioned p-type film layer 100 and following multi-quantum pit structure layers 300.Electronic barrier layer 200 can refer to EBL.
EBL is the p-type AlGaN material that Al component is higher than Quantum Well MQWs potential barrier in following multi-quantum pit structure layers 300, the thickness of EBL
Range is in 1nm to 100nm.Assuming that the thickness of electronic barrier layer 200 is A1, then 100nm >=A1≥1nm.Work as electronic barrier layer
When 200 thickness is greater than 100, then the electric property of LED chip can be seriously affected.
For multi-quantum pit structure layer 300:
The multi-quantum pit structure layer 300 is provided with third side 310 and the 4th side 320, the multi-quantum pit structure
Layer 300 is arranged in the second side 220 by the third side 310, and the third side 310 is located at the described 4th
Between side 320 and the second side 220.Wherein, the emission wavelength of the multi-quantum pit structure layer 300 is not less than 260nm.
It can be the upper and lower of multi-quantum pit structure layer 300 continuing with referring to Fig. 1, third side 310 and the 4th side 320
Two sides.It the third side 310 of multi-quantum pit structure layer 300 can be with 220 phase of second side of above-mentioned electronic barrier layer 200
Mutually fitting, the 4th side 320 of multi-quantum pit structure layer 300 can be with the 5th side 410 of following aluminium gallium nitride alloy material layers 400
Be bonded to each other so that multi-quantum pit structure layer 300 be located at above-mentioned electronic barrier layer 200 and following aluminium gallium nitride alloy material layers 400 it
Between.The emission wavelength of the Quantum Well MQWs of the epitaxial growth in LEDF chip can be not less than 260nm.Assuming that more in LEDF chip
The emission wavelength of quantum well structure layer 300 is A2, then A2≥260nm.When the hair of the multi-quantum pit structure layer 300 in LEDF chip
(A when optical wavelength is lower than 2602< 260nm), so that issued light is oxidized gallium absorption, this is unfavorable for the low meeting of luminous wavelength
LEDF chip goes out light, so that luminous wavelength is meaningless lower than 260.
For aluminium gallium nitride alloy material layer 400:
Aluminium gallium nitride alloy material layer 400 is provided with the 5th side 410 and the 6th side 420, the aluminium gallium nitride alloy material layer 400
It is arranged on the 4th side 320 by the 5th side 410, and the 5th side 410 is located at the 6th side
Between 420 and the 4th side 320.Wherein, the making material of the aluminium gallium nitride alloy material layer 400 is N-shaped aluminium gallium nitride alloy material
Material.
Continuing with referring to Fig. 1, the 5th side 410 and the 6th side 420 can be the upper and lower of aluminium gallium nitride alloy material layer 400
Two sides.It 5th side 410 of aluminium gallium nitride alloy material layer 400 can be with the 4th side of above-mentioned multi-quantum pit structure layer 300
320 are bonded to each other, and the 6th side 420 of aluminium gallium nitride alloy material layer 400 can be with the heptalateral of following aluminium gallium nitride alloy buffer layers 500
Face 510 is bonded to each other, so that aluminium gallium nitride alloy material layer 400 is located at above-mentioned multi-quantum pit structure layer 300 and following aluminium gallium nitride alloys are slow
It rushes between layer 500.The making material of aluminium gallium nitride alloy material layer 400 can be N-shaped aluminium gallium nitride alloy material, N-shaped aluminium gallium nitride alloy material
It can refer to n-AlGaN material, i.e. AlGaN material n-type doping, AlGaN (aluminium gallium nitride alloy) is suitable for preparing visible light to ultraviolet
The photoelectric device of wave-length coverage.The thickness range of Al component in n-AlGaN not higher than 0.66, n-AlGaN be 200nm extremely
5000nm.Assuming that the thickness of aluminium gallium nitride alloy material layer 400 is A3, then 5000nm >=A3≥200nm.When aluminium gallium nitride alloy material layer 400
In Al component be higher than 0.66 when, then it is meaningless for shining for LED chip.
For aluminium gallium nitride alloy buffer layer 500:
Aluminium gallium nitride alloy buffer layer 500 is provided with heptalateral face 510 and the 8th side 520, the aluminium gallium nitride alloy buffer layer 500
It is arranged on the 6th side 420 by heptalateral face 510, and heptalateral face 510 is located at the 8th side
Between 520 and the 6th side 420.Wherein, the making material of the aluminium gallium nitride alloy buffer layer 500 is N-shaped aluminium gallium nitride alloy material
Material.
It can be the upper and lower of aluminium gallium nitride alloy buffer layer 500 continuing with referring to Fig. 1, heptalateral face 510 and the 8th side 520
Two sides.It the heptalateral face 510 of aluminium gallium nitride alloy buffer layer 500 can be with the 6th side of above-mentioned aluminium gallium nitride alloy material layer 400
420 are bonded to each other, and the 8th side 520 of aluminium gallium nitride alloy buffer layer 500 can be with the 9th side of following gallium oxide substrates 600
610 are bonded to each other, so that aluminium gallium nitride alloy buffer layer 500 is located at above-mentioned aluminium gallium nitride alloy material layer 400 and following gallium oxide substrates 600
Between.The making material of aluminium gallium nitride alloy buffer layer 500 can be N-shaped aluminium gallium nitride alloy material, and N-shaped aluminium gallium nitride alloy material can refer to
N-AlGaN, N-shaped aluminium gallium nitride alloy material refer to aluminium gallium nitride alloy material n-type doping.Aluminium gallium nitride alloy buffer layer 500 (i.e. n-AlGaN)
Buffer layer can be low temperature AI GaN buffer (i.e. the aluminium gallium nitride alloy buffer layer 500 of low temperature) or superlattice structure, n-type doping.
AlGaN (aluminium gallium nitride alloy) is suitable for preparing the photoelectric device of visible light to UV wavelength range.
For gallium oxide substrate 600:
Gallium oxide substrate 600 is provided with the 9th side 610 and the tenth side 620, and the gallium oxide substrate 600 passes through described
9th side 610 is arranged on the 8th side 520, and the 9th side 610 is located at the tenth side 620 and described
Between 8th side 520.Wherein, the making material of the gallium oxide substrate 600 is N-shaped gallium oxide material；The gallium oxide lining
The thickness range at bottom 600 is from 100 μm to 700 μm.
Continuing with referring to Fig. 1, the 9th side 610 and the tenth side 620 can be upper and lower two of gallium oxide substrate 600
Side.It 9th side 610 of gallium oxide substrate 600 can be with the 8th side 520 mutually patch of above-mentioned aluminium gallium nitride alloy buffer layer 500
It closes, so that above-mentioned aluminium gallium nitride alloy buffer layer 500 is located between gallium oxide substrate 600 and above-mentioned aluminium gallium nitride alloy material layer 400.Oxidation
The making material of gallium substrate 600 can be N-shaped gallium oxide material, and N-shaped gallium oxide material can refer to n-Ga2O3, N-shaped gallium oxide
It is gallium oxide material n-type doping.The alias of gallium oxide is gallic oxide, gallium oxide (Ga2O3) it is that a kind of broad stopband is partly led
Body, Eg=4.9eV, the electric conductivity and the characteristics of luminescence of gallium oxide are excellent.Gallium oxide is a kind of transparent oxide semiconductor material
Material, has broad application prospects, such as gallium oxide is used as in Ga base semiconductor material in terms of opto-electronic device
Insulating layer and UV filter；Gallium oxide is also used as O2Chemical probe etc..
It should be noted that the thickness range of gallium oxide substrate 600 can be 100 μm to 700 μm, it is assumed that gallium oxide substrate
600 thickness is A4, then 700 μm >=A4≥100μm.When the thickness of gallium oxide substrate 600 is less than 100 μm, i.e. A4100 μm of <,
Then in actual process conditions, gallium oxide substrate 600 of the thickness less than 100 μm can not be prepared；When gallium oxide substrate 600
When thickness is greater than 700 μm, i.e. A4700 μm of <, then gallium oxide substrate 600 of the thickness greater than 700 μm will lead to produced by LED chip
Heat increase, be unfavorable for the normal work of LED chip.
Fig. 3 and Fig. 4 are referred to, Fig. 3 is a kind of deep ultraviolet based on n-type doping gallium oxide provided in an embodiment of the present invention
The formal dress schematic diagram of LED vertical chip device vertical structure；Fig. 4 is provided in an embodiment of the present invention a kind of based on n-type doping oxygen
Change the upside-down mounting schematic diagram of the deep ultraviolet LED vertical chip device of gallium.It in actual operation, can be in n-Ga2O3First extension on substrate
N-AlGaN buffer layer.The n-AlGaN buffer layer of the extension can be the n-AlGaN buffer or superlattice structure of low temperature.
Then the successively exemplary epitaxial layer of extension deep ultraviolet LED: n-AlGaN material, MQWs, EBL, p-GaN/p-AlGaN.For p-type
Layer uses p-GaN or p-AlGaN, then depends on extension scheme.The difference of this p-type layer extension scheme will will affect last core
It is inverted structure or positive assembling structure that piece, which uses,.For the something in common of inverted structure and positive both epitaxial structures of assembling structure,
It is to use N-shaped in a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention
The n-Ga of doping2O3Substrate.In the n-Ga of this n-type doping2O3On the basis of substrate, it is dark purple n-AlGaN, MQWs etc. can be carried out
The epitaxial growth of outer LED structure.After completing epitaxial growth, due to n-Ga2O3Substrate inherently conduction, so being not necessarily at this time
Substrate is removed.Carry by conventional chip technology can be realized vertical structure upside-down mounting or formal dress deep ultraviolet LED it is vertical
Straight chip.
The present invention provides a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide, passes through electronic barrier layer
200 first side 210 is arranged in p-type film layer 100, so that electronic barrier layer 200 and p-type film layer 100 are bonded to each other；
The third side 310 of multi-quantum pit structure layer 300 is arranged in the second side 220 of electronic barrier layer 200, so that multiple quantum wells
Structure sheaf 300 and electronic barrier layer 200 are bonded to each other；5th side 410 of aluminium gallium nitride alloy material layer 400 is arranged in multiple quantum wells
On 4th side 320 of structure sheaf 300, so that aluminium gallium nitride alloy material layer 400 and multi-quantum pit structure layer 300 are bonded to each other；Nitrogen
The heptalateral face 510 for changing gallium aluminium buffer layer 500 is arranged on the 6th side 420 of aluminium gallium nitride alloy material layer 400, so that aluminium nitride
Gallium buffer layer 500 and aluminium gallium nitride alloy material layer 400 are bonded to each other；9th side 610 of gallium oxide substrate 600 is arranged in aluminium nitride
On 8th side 520 of gallium buffer layer 500, so that gallium oxide substrate 600 and aluminium gallium nitride alloy buffer layer 500 are bonded to each other.In this way
So that being disposed with p-type film layer 100, electronic blocking in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping
Layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate 600, after
And substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material is used, so that preparing the oxygen of vertical structure
When changing the deep ultraviolet LED vertical chip of gallium, removed without the substrate material to LED epitaxial wafer.Then existing skill is overcome
The technological deficiency removed to the substrate material of LED epitaxial wafer is needed in art.To reach without the lining to LED epitaxial wafer
Bottom material is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
Based on the same inventive concept, this application provides with a kind of deep ultraviolet based on gallium oxide corresponding to embodiment one
The production method of LED vertical chip, detailed in Example two.
Embodiment two
Shown in Figure 2, Fig. 2 is a kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention
The flow chart of the preparation method of vertical chip.Second embodiment of the present invention provides a kind of deep ultraviolets based on n-type doping gallium oxide
The preparation method of the preparation method of LED vertical chip, the deep ultraviolet LED vertical chip based on n-type doping gallium oxide includes:
Step S100 obtains gallium oxide substrate 600, and aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate 600
500；
Fig. 2 is referred to, n-Ga can be used2O3Substrate, n-Ga2O3Substrate size then according to reaction chamber and
It is fixed, it can be 2 inches/4 inches/8 inches/12 inches/16 inches etc..It is with a thickness of between 200 μm~500 μm.n-Ga2O3Lining
Bottom is oriented to β.It can be in above-mentioned n-Ga2O3Substrate on epitaxial growth n-AlGaN buffer layer.N-AlGaN buffer layer can be
Low temperature AI GaN buffer or superlattice structure, n-type doping.Then vertical in the deep ultraviolet LED of the gallium oxide based on n-type doping
Gallium oxide substrate 600 and aluminium gallium nitride alloy buffer layer 500 are set gradually in chip.
Step S200 makes aluminium gallium nitride alloy material layer 400 on the aluminium gallium nitride alloy buffer layer 500；
Continuing with referring to fig. 2, epitaxial growth n-AlGaN material, n- on aluminium gallium nitride alloy buffer layer 500 can be made above-mentioned
The Al component of AlGaN material is not higher than 0.66, and the thickness of aluminium gallium nitride alloy material layer 400 is between 200~5000nm.Then exist
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer are set gradually in the deep ultraviolet LED vertical chip of gallium oxide based on n-type doping
500 and aluminium gallium nitride alloy material layer 400.
Step S300 makes multi-quantum pit structure layer 300 in the aluminium gallium nitride alloy material layer 400；
Continuing with referring to fig. 2, can in above-mentioned aluminium gallium nitride alloy material layer 400 epitaxial growth Quantum Well MQWs, Quantum Well
The emission wavelength of MQWs is not less than 260nm.Then in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping successively
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material layer 400 and multi-quantum pit structure layer 300 are set.
Step S400 makes electronic barrier layer 200 on the multi-quantum pit structure layer 300；
Continuing with referring to fig. 2, can on above-mentioned multi-quantum pit structure layer 300 epitaxial growth EBL.EBL is that Al component is high
In the p-type AlGaN material of Quantum Well MQWs potential barrier, the thickness of electronic barrier layer 200 is between 1~100nm.Then it is being based on
Set gradually in the deep ultraviolet LED vertical chip of the gallium oxide of n-type doping gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500,
Aluminium gallium nitride alloy material layer 400, multi-quantum pit structure layer 300 and electronic barrier layer 200.
Step S500 makes p-type film layer 100 on the electronic barrier layer 200, described based on n-type doping to prepare
The deep ultraviolet LED vertical chip of gallium oxide.
Continuing with referring to fig. 2, can on above-mentioned electronic barrier layer 200 epitaxial growth p-GaN or p-AlGaN.If growth
Al component need to be higher than Quantum Well MQWs and be averaged Al component in p-AlGaN, the then p-AlGaN grown.Then based on n-type doping
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material are set gradually in the deep ultraviolet LED vertical chip of gallium oxide
The bed of material 400, multi-quantum pit structure layer 300, electronic barrier layer 200 and p-type film layer 100.P-type gallium nitride material can refer to p-
GaN, i.e. GaN material p-type doping are wurtzite structures under GaN (gallium nitride) normal temperature and pressure.P-type aluminium gallium nitride alloy material can be
Refer to that p-AlGaN, i.e. AlGaN material p-type doping, AlGaN (aluminium gallium nitride alloy) are suitable for preparing visible light to UV wavelength range
Photoelectric device.
It should be noted that can take when making p-type film layer 100 on the electronic barrier layer 200 in the electricity
P-GaN film layer is made on sub- barrier layer 200, or p-AlGaN film layer is made on the electronic barrier layer 200.In order to
P-AlGaN is made for making p-GaN film layer on the electronic barrier layer 200, or on the electronic barrier layer 200
Film layer is described in detail, and two kinds of embodiments presented below are explained in detail:
The first embodiment can make p-GaN film layer on the electronic barrier layer 200.When needing formal dress knot
When structure, can by the making material of p-type film layer 100 select p-GaN, then at this time the one side of p-type film layer 100 can and electricity
The first side 210 on sub- barrier layer 200 is bonded to each other, and the another side of p-type film layer 100 can be with conductive 700 phase of silicon substrate
Mutually fitting.Fig. 3 is referred to, it at this time from bottom to up can be according in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping
It is secondary be provided with gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material layer 400, multi-quantum pit structure layer 300,
Electronic barrier layer 200 and p-type film layer 100.
Second of embodiment can make p-AlGaN film layer on electronic barrier layer 200.When needing inverted structure
When, p-AlGaN film layer can be bonded to each other with electronic barrier layer 200 (EBL).Fig. 4 is referred to, is being based on n-type doping at this time
Gallium oxide deep ultraviolet LED vertical chip in can be disposed with p-type film layer 100, electronic barrier layer from bottom to up
200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate 600.
The present invention provides a kind of preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide, passes through acquisition
After gallium oxide substrate 600, by the preparation of aluminium gallium nitride alloy buffer layer 500 on the gallium oxide substrate 600；And by aluminium gallium nitride alloy material
The bed of material 400 is prepared on the aluminium gallium nitride alloy buffer layer 500；Multi-quantum pit structure layer 300 is prepared in the aluminium gallium nitride alloy again
In material layer 400；Simultaneously by the preparation of electronic barrier layer 200 on the multi-quantum pit structure layer 300；Then by p-type film layer
100 preparations are on the electronic barrier layer 200, to prepare the vertical core of deep ultraviolet LED of the gallium oxide based on n-type doping
Piece.Make to be disposed in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping in this way p-type film layer 100,
Electronic barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide lining
Bottom 600 then uses substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material, so that preparation is vertical
When the deep ultraviolet LED vertical chip of the gallium oxide of structure, removed without the substrate material to LED epitaxial wafer.Then overcome
The technological deficiency that needs to remove the substrate material of LED epitaxial wafer in the prior art.It is not necessarily to outside to LED to reach
The substrate material for prolonging piece is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
It should be noted last that the above specific embodiment is only used to illustrate the technical scheme of the present invention and not to limit it,
Although being described the invention in detail referring to example, those skilled in the art should understand that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of the technical solution of the present invention, should all cover
In the scope of the claims of the present invention.
Claims (10)
1. a kind of preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide, which is characterized in that described to be based on n
The preparation method of deep ultraviolet LED vertical chip of type doping gallium oxide includes:
Gallium oxide substrate is obtained, aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate；
Aluminium gallium nitride alloy material layer is made on the aluminium gallium nitride alloy buffer layer；
Multi-quantum pit structure layer is made in the aluminium gallium nitride alloy material layer；
Electronic barrier layer is made on the multi-quantum pit structure layer；
P-type film layer is made on the electronic barrier layer, is hung down with preparing the deep ultraviolet LED based on n-type doping gallium oxide
Straight chip.
2. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as described in claim 1, feature
It is:
The making material of the gallium oxide substrate is N-shaped gallium oxide material.
3. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 2, feature
It is:
The thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
4. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 3, feature
It is:
The making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material.
5. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 4, feature
It is:
The making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
6. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 5, feature
It is:
The emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
7. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 6, feature
It is:
The thickness range of the electronic barrier layer is greater than 1nm.
8. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 7, feature
It is:
The thickness range of the electronic barrier layer is less than 100nm.
9. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 8, feature
It is:
The making material of the p-type film layer is p-type gallium nitride material.
10. the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide as claimed in claim 8, feature
It is:
The making material of the p-type film layer is p-type aluminium gallium nitride alloy material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048636A (en) * | 2019-12-23 | 2020-04-21 | 江苏如高第三代半导体产业研究院有限公司 | Gallium oxide-based ultraviolet light-emitting diode and preparation method thereof |
| CN111180557A (en) * | 2019-12-25 | 2020-05-19 | 中南大学 | Novel ultraviolet light-emitting diode and preparation method thereof |
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| CN102124575A (en) * | 2008-11-17 | 2011-07-13 | Lg伊诺特有限公司 | Method for manufacturing gallium oxide substrate, light emitting device, and method for manufacturing the light emitting device |
| CN103489967A (en) * | 2013-09-05 | 2014-01-01 | 大连理工大学 | Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film |
| CN104183678A (en) * | 2014-08-22 | 2014-12-03 | 江苏鑫博电子科技有限公司 | LED flip chip and patterned substrate and manufacturing method of LED flip chip |
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| CN102124575A (en) * | 2008-11-17 | 2011-07-13 | Lg伊诺特有限公司 | Method for manufacturing gallium oxide substrate, light emitting device, and method for manufacturing the light emitting device |
| CN103489967A (en) * | 2013-09-05 | 2014-01-01 | 大连理工大学 | Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film |
| CN104183678A (en) * | 2014-08-22 | 2014-12-03 | 江苏鑫博电子科技有限公司 | LED flip chip and patterned substrate and manufacturing method of LED flip chip |
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| CN111048636A (en) * | 2019-12-23 | 2020-04-21 | 江苏如高第三代半导体产业研究院有限公司 | Gallium oxide-based ultraviolet light-emitting diode and preparation method thereof |
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