CN109346555A - A kind of continuous manufacturing apparatus and method of black silicon micro-nano structure wide scope regulation - Google Patents
A kind of continuous manufacturing apparatus and method of black silicon micro-nano structure wide scope regulation Download PDFInfo
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- CN109346555A CN109346555A CN201811060706.1A CN201811060706A CN109346555A CN 109346555 A CN109346555 A CN 109346555A CN 201811060706 A CN201811060706 A CN 201811060706A CN 109346555 A CN109346555 A CN 109346555A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 35
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 239000012495 reaction gas Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 23
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 5
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000033001 locomotion Effects 0.000 abstract description 4
- 229910018503 SF6 Inorganic materials 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 210000002268 wool Anatomy 0.000 description 9
- 235000008216 herbs Nutrition 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910004014 SiF4 Inorganic materials 0.000 description 5
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to the continuous manufacturing apparatus and method of a kind of black silicon micro-nano structure wide scope regulation, reaction chamber with vacuum, traverse the conveyer belt that reaction chamber is equipped with transmission silicon wafer, metal plate is had above the conveyer belt, the lower metal plate parallel with upper metal plate is equipped with below conveyer belt, upper metal plate, aperture has been covered on lower metal plate, alternating electric field is formed between upper metal plate and lower metal plate, be equipped between upper metal plate and conveyer belt can oscilaltion and adjust the ceramic baffle plate of horizontal direction air-flow concentration gradient, reaction chamber upper surface is connected with the gas handling system for being passed through reaction gas, reaction chamber bottom surface is connected with extract system.The gas field structure that the present invention passes through the formation gas with various gradient distribution in reaction chamber, in conjunction with differential responses combination of gases, along the silicon wafer horizontal direction of motion, based on being etched fastly with isotropism, it is gradually changed based on being etched slowly to anisotropy, to realize the micro-nano structure wide scope regulation that black silicon continuously manufactures.
Description
Technical field
The present invention relates to micro-nano structure manufacturing equipment technical field, especially a kind of black silicon micro-nano structure wide scope regulation
Continuous manufacturing apparatus and method.
Background technique
In recent years, it is formed relative to traditional monocrystalline silicon alkali making herbs into wool formation micron order pyramid structure and polycrystalline acid making herbs into wool micro-
Meter level pit, the darker surface wool manufacturing technology of silicon chip surface are commonly known as black silicon technology.Main stream approach has wet-method etching
Metal catalytic chemical corrosion method (MCCE) and dry method making herbs into wool ionic reaction method (RIE).The black silicon technology of wet process is two sides making herbs into wool,
Suede structure depends on Si wafer quality and process conditions.The black silicon technology of dry method, that is, maskless reactive ion etching method is single
Wheat flour suede.
RIE dry method making herbs into wool is that very strong bias is generated between parallel-plate using radio-frequency power supply.It is passed through SF6、O2、Cl2Deng
Mixed gas, excitation generates plasma under the action of high voltage, generates F, SxFO isoreactivity free radical.Living radical exists
Silicon face and silicon react to form SiFxGas.The radio-frequency power supply of load makes ion bombardment energy reach several hundred electron volts.
Energetic ion can accelerate the chemical reaction of living radical Yu silicon face vertical direction, while play the role of side again from mask,
To form needle-shaped nano-structure in silicon chip surface.
The working principle of the black silicon of dry method is exactly chemical reaction plus physical bombardment, and specific reactional equation is as follows:
SF6↑+O2↑→SF+ x+F*+O*
F*+Si→SiF4↑
F*+O*+Si→SiOxFy↓
O*+Si→SO2↓；F*+SiO2→SiF4↑+O2↑
Cl*+Si→SiCl4↓
Sulfur hexafluoride (SF6) and oxygen (O2) be cleaved in the plasma, generate F*、O*、SF+ xEqual groups.F*Group with
Pasc reaction forms volatility SiF4Gas plays the role of chemical etching silicon substrate.F*And O*Group reacts to form difficulty with silicon substrate
The SiO of volatilizationxFyPolymer deposits are in surface of silicon or are deposited on the side wall of column, cone cell or acicular microstructure, play passivation
The effect of protection.The electric field generated due to two parallel metal sheets perpendicular to parallel metal sheet, ion can by electric field acceleration, thus
There is a downward bombardment effect to Si piece, cause the etch rate of vertical direction that can be greater than the etch rate of in-plane,
That is anisotropic etching.SF+ xGroup can remove a part of SiOxFyPolymer generates volatility SOxFyAnd SiF4Gas.No
SiOxFyThe silicon of protection is just etched away, by SiOxFyThe silicon of covering is just kept down.Black silicon is exactly in etching, is passivated simultaneously
It works, SiOxFyPolymer constantly generates and some is by SF+ xIt is formed in the extremely complex environment of group removal.
Such etching system, technological parameter are difficult to control, and silicon chip surface making herbs into wool is uneven, flower piece easy to form.Thus in reaction gas
It joined Cl in body2Gas.Cl2Gas is reacted with Si generates SiCl4Passivating film.SiCl4Exposure mask, it is not volatile, be not easy and its
His plasma reaction.Cl is added2Afterwards, in addition to SiOxFyOutside polymer inactivation film, SiCl is also added4Passivating film, masking effect
More preferably, etch rate is slack-off, can be used to improve micro-nano structure preparation uniformity and technology stability.
Application number 201210073077.2 " method for forming the black silicon of solar energy dry method making herbs into wool with excitation of plasma ", discloses
A kind of method of the continuous black silicon of dry method making herbs into wool, by being realized with automatic conveyor, the support plate for being loaded with silicon wafer is passing the patent automatically
By one group of linear plasma source being placed in parallel under the drive of defeated device, linear plasma source is made of a pair of of parallel-plate,
One plate of parallel-plate connects radio-frequency power supply, and another plate earthing is passed through the mixed gas between parallel-plate under the excitation of radio-frequency power supply
Plasma is formed, completes the etching of silicon wafer, the gas after etching is taken away by vacuum pump.
In existing continuous black silicon manufacturing equipment, the gas component in entire vacuum reaction chamber is uniformly, by changing
Become SF6Content, change etching speed, to change the pattern of silicon chip surface.Such as work as SF6When flow is smaller, the SiO of generationxFy
And SiCl4Play the role of passivation protection to silicon wafer, leads to F*Group can not effectively with pasc reaction, chemical etching silicon substrate effect
It is small and be difficult to form black silicon；Increase SF6Flow then makes SiOxFyPolymer inactivation declines, F*Group corrasion enhancing.
Newly-generated SiOxFyPolymer does not simply fail to make up SF+ xThe etching of group is lost, and lateral etching effect is big, will form coarse
Silicon face, rather than black silicon.Etch period is reduced, also just accelerates the rate that transmitting device is advanced, is open small, but depth
Also small.Only SF6When flow is suitable, chemical etching effect and passivation have reached a degree of balance, could be formed
Black silicon microstructure.The opening of micro-nano structure is small, by increasing etch period, that is, slows down the rate of transmitting device traveling, can
The etching depth of micro-nano structure is increased, but is difficult to increase opening size, and reduce the production production capacity of black silicon.
Summary of the invention
The technical problem to be solved by the present invention is the present invention provides a kind of black silicon in order to overcome the deficiencies in the existing technology
The continuous manufacturing apparatus and method of micro-nano structure wide scope regulation, by forming the gradient distribution gas field structure of gas with various, knot
Differential responses combination of gases is closed, realizes that the depth and opening of micro-nano structure in the continuous manufacturing process of black silicon can be separately adjustable.
The technical solution adopted by the present invention to solve the technical problems is: a kind of company of black silicon micro-nano structure wide scope regulation
Continuous manufacturing equipment and method, the reaction chamber with vacuum traverse the conveyer belt that reaction chamber is equipped with transmission silicon wafer, the transmission
Band top has metal plate, is equipped with the lower metal plate parallel with upper metal plate, upper metal plate, lower metal plate below conveyer belt
On be covered with aperture, alternating electric field is formed between upper metal plate and lower metal plate, is equipped between upper metal plate and conveyer belt
Can oscilaltion and adjust the ceramic baffle plate of horizontal direction air-flow concentration gradient, reaction chamber upper surface, which is connected with, is passed through reaction gas
The gas handling system of body, reaction cavity bottom surface are connected with extract system.
Preferably, the gas handling system includes being located at reaction chamber one end to each lead into O2、SF6、N2Three tunnel air inlets
It manages, be located at the reaction chamber other end and be passed through Cl2Or SiCl4Air inlet pipe all the way.
Further, the upper metal plate be connected with radio frequency source, lower metal plate earthing and in upper metal plate and lower metal
Alternating electric field is formed between plate.
A method of black silicon being prepared using above-mentioned continuous manufacturing apparatus, there are following steps:
A, by extract system, the vacuum degree of reaction chamber is evacuated to 10-3Pa or less；
B, three tunnel air inlet pipe are opened and is passed through SF6And O2, open air inlet pipe all the way and be passed through Cl2, regulate ceramic baffle plate position with
Realize gas concentration gradient control；
C, start conveyer belt, silicon wafer is transmitted in reaction chamber；
D, connect the radio frequency source of upper metal plate, under the action of alternating electric field, gas is ionized, formation plasma and
Etching silicon wafer.
Above-mentioned plasma, under electric field action, vertical direction etch rate is higher than side etch rate, but the change of side
Etching is learned to still remain.As silicon wafer advances along horizontal direction, chlorine or SiCl in mixed gas4Ratio column increase, attachment
In silicon chip surface, due to SiCl4Do not react with F, thus can lateral protection reinforce, while the etch rate of vertical direction
Slow down.
The beneficial effects of the present invention are: gas field knot of the present invention by the formation gas with various gradient distribution in reaction chamber
Structure, in conjunction with differential responses combination of gases, along the silicon wafer horizontal direction of motion, etched fastly with isotropism based on, it is slow to anisotropy
It is gradually changed based on etching, to realize the micro-nano structure wide scope regulation that black silicon continuously manufactures.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is structural schematic diagram of the invention.
Silicon wafer micro-nano structure SEM figure prepared by Fig. 2 embodiment one.
Silicon wafer micro-nano structure SEM figure prepared by Fig. 3 embodiment two.
In figure: lower 5. 3 tunnel air inlet pipe of metal plate, the 6. 1 tunnel air inlet pipe 7. of metal plate 4. on 1. conveyer belt, 2. reaction chamber 3.
8. ceramic baffle plate of silicon wafer, 9. extract system
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates basic structure of the invention, therefore it only shows the composition relevant to the invention.
A kind of continuous manufacturing apparatus of black silicon micro-nano structure wide scope regulation as shown in Figure 1, the reaction chamber with vacuum
Room 2 traverses the conveyer belt 1 that reaction chamber 2 is equipped with transmission silicon wafer 7, is equipped with upper metal plate 3, conveyer belt 1 above the conveyer belt 1
Lower section is equipped with the lower metal plate 4 parallel with upper metal plate 3, has been covered with aperture on upper metal plate 3, lower metal plate 4, described is upper
Metal plate 3 is connected with radio frequency source, and lower metal plate 4 is grounded, to form alternating electric field between upper metal plate 3 and lower metal plate 4；
Be equipped between upper metal plate 3 and conveyer belt 1 can oscilaltion and adjust the ceramic baffle plate 8 of horizontal direction air-flow concentration gradient, instead
2 upper surface of chamber is answered to be connected with the gas handling system for being passed through reaction gas, the gas handling system includes being located at 2 left end of reaction chamber
Each lead into O2、SF6、N2Three tunnel air inlet pipe 5, be located at 2 right end of reaction chamber and be passed through Cl2Or SiCl4Air inlet pipe 6 all the way, instead
2 bottom surface of chamber is answered to be connected with extract system 9.
A kind of method that above-mentioned continuous manufacturing apparatus prepares black silicon has following steps:
A, extract system 9 is opened, the vacuum degree of reaction chamber 2 is evacuated to 10-3Pa or less；
B, three tunnel air inlet pipe 5 are opened and are passed through the SF that flow is 2000~3000sccm6It is 1000~2500sccm with flow
O2, open air inlet pipe 6 all the way and be passed through the Cl that flow is 100~600sccm2, 8 position of ceramic baffle plate is regulated to realize gas
Concentration gradient control；
C, start conveyer belt 1, silicon wafer 7 is transmitted in reaction chamber 2；
D, the radio frequency source of upper metal plate 3 is connected, under the action of alternating electric field, gas is ionized, and forms plasma
And etching silicon wafer.
Embodiment one: the reaction chamber 2 is 2.5m long, wide 500mm, high 300mm, silicon wafer 7 having a size of 156mm × 156mm,
Silicon wafer 7 continuously enters reaction chamber 2 by conveyer belt 1.Conveyer belt 1 is being passed using high-intensitive carbon fibre material, thickness 10mm
During sending, conveyer belt 1 is tightened always, guarantees silicon wafer 7 by horizontal feed into reaction chamber 2.Pass through extract system 9, packet
Molecular pump, dry pump etc. are included, the vacuum degree of reaction chamber 2 is evacuated to lower than 10-3Pa；SF is passed through by three tunnel air inlet pipe 56And O2,
Flow is respectively 2500sccm and 1800sccm, is passed through chlorine, flow 500sccm by air inlet pipe 6 all the way.Extract system 9
It remains work, by adjusting the valve of extract system 9, controls the speed of exhaust, maintain the interior pressure 20Pa of reaction chamber 2.
Narrow meshed upper metal plate 3 and lower metal plate 4, long 1.6m, wide 540mm, thickness 20mm, between upper metal plate 3 and lower metal plate 4
Interval be 50mm.Upper metal plate 3 is 200mm, the interval between conveyer belt 1 and upper metal plate 3 with 2 top surface of reaction chamber distance
It is 20mm.Conveyer belt 1, lower metal plate 4 and reaction chamber 2 are grounded, and 1 movement speed of conveyer belt is 150mm/min, upper metal plate
3 connection radio frequency sources, RF source frequencies are 13.6MHz, power 1200W.Upper and lower liftable 8 width 540mm of ceramic baffle plate, thickness
20mm, height 30mm, ceramic baffle plate 8 are arranged between upper metal plate 3 and conveyer belt 1, the lower edge and conveyer belt of ceramic baffle plate 8
The distance between 1 is 10mm.
In above-mentioned etching process, due to SF6And O2It is to enter from the three tunnel air inlet pipe 5 in 2 left side of reaction chamber, then passes through
Aperture on upper metal plate 3 enters the space between upper metal plate 3 and lower metal plate 4, and ionization generates F*And O*, and extract system 9
Be on the right side of reaction chamber 2, so, SF6And O2Entire reaction chamber 2, SF can be full of6And O2It can more slightly higher, right side on the left of concentration
Can be more slightly lower, Gas concentration distribution from left to right will form a smaller gradient；Cl2All the way from 2 right side of reaction chamber
Air inlet pipe 6 enters, and is also evacuated on the right side of reaction chamber 2, such Cl2It can be spread to the left side, so that from left to right forming a ratio
Biggish concentration gradient.In this way, by the control of flow, the distribution of gas concentration gradient required for capable of being formed.Due to F*With
Si reacts to form SiF4Gas, that is, play the role of etching Si.When silicon wafer 7 enters reaction chamber 2 from left side,
SF6Concentration is relatively high, while etching silicon, due to being SiO from mask layerxFyPolymer, SF+ xGroup can etch quickly
SiOxFyPolymer, side passivation effect is unobvious, so that lateral etching is big, the opening of micro-nano structure can be done greatly.With silicon
Piece 7 moves right, Cl*It reacts with Si and generates SiCl4Deposit, these deposits are covered on the surface Si, are not easy by SF+ x
Group etching.The SiCl of bottom4Deposit is mainly fallen by ion bombardment, and side ion bombardment benefit is low, so, when etching, is main
It etches down, in this way, lateral etching and longitudinal etching are controlled can respectively, realizes the regulation of micro-nano structure.Fig. 2 is the reality
Apply the preparation-obtained silicon wafer micro-nano structure SEM figure of example.
Embodiment two
Air inlet pipe 6 is not passed through chlorine all the way, and conveyer belt movement rate is 250mm/min, remaining structure, parameter and embodiment
One is identical.Fig. 3 is the preparation-obtained silicon wafer micro-nano structure SEM figure of the embodiment.
(the SEM figure of both the above embodiment have why not with or explanation please under this supplement)
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property range is not limited to the contents of the specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (4)
1. a kind of continuous manufacturing apparatus of black silicon micro-nano structure wide scope regulation, the reaction chamber (2) with vacuum, feature
It is: traverses the conveyer belt (1) that reaction chamber (2) are equipped with transmission silicon wafer (7), have metal plate above the conveyer belt (1)
(3), the lower metal plate (4) parallel with upper metal plate (3) is equipped with below conveyer belt (1), on upper metal plate (3), lower metal plate (4)
It has been covered with aperture, alternating electric field, upper metal plate (3) and conveyer belt are formed between upper metal plate (3) and lower metal plate (4)
(1) be equipped between can oscilaltion and adjust the ceramic baffle plate (8) of horizontal direction air-flow concentration gradient, table on reaction chamber (2)
Face is connected with the gas handling system for being passed through reaction gas, and reaction chamber (2) bottom surface is connected with extract system (9).
2. the continuous manufacturing apparatus of black silicon micro-nano structure wide scope regulation as described in claim 1, it is characterized in that: it is described into
Gas system includes being located at reaction chamber (2) one end to each lead into O2、SF6Or N2Three tunnel air inlet pipe (5), be located at reaction chamber (2)
The other end is passed through Cl2Or SiCl4Air inlet pipe all the way (6).
3. the continuous manufacturing apparatus of black silicon micro-nano structure wide scope regulation as claimed in claim 2, it is characterized in that: described is upper
Metal plate (3) is connected with radio frequency source, lower metal plate (4) is grounded and forms alternation between upper metal plate (3) and lower metal plate (4)
Electric field.
4. a kind of method for preparing black silicon using continuous manufacturing apparatus described in claim 3 has following steps:
A, start extract system (9), the vacuum degree of reaction chamber (2) is evacuated to 10-3Pa or less；
B, three tunnel air inlet pipe (5) are opened and is passed through SF6And O2, open air inlet pipe (6) all the way and be passed through Cl2, regulate ceramic baffle plate (8)
Position is to realize gas concentration gradient control；
C, start conveyer belt (1), silicon wafer (7) is transmitted into reaction chamber (2)；
D, connect the radio frequency source of upper metal plate (3), under the action of alternating electric field, gas is ionized, formation plasma and
Etching silicon wafer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060706.1A CN109346555B (en) | 2018-09-12 | 2018-09-12 | Continuous manufacturing equipment and method for wide-range regulation and control of black silicon micro-nano structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811060706.1A CN109346555B (en) | 2018-09-12 | 2018-09-12 | Continuous manufacturing equipment and method for wide-range regulation and control of black silicon micro-nano structure |
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| Publication Number | Publication Date |
|---|---|
| CN109346555A true CN109346555A (en) | 2019-02-15 |
| CN109346555B CN109346555B (en) | 2020-05-26 |
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| CN201811060706.1A Active CN109346555B (en) | 2018-09-12 | 2018-09-12 | Continuous manufacturing equipment and method for wide-range regulation and control of black silicon micro-nano structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783417A (en) * | 2019-11-08 | 2020-02-11 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102087957A (en) * | 2009-12-03 | 2011-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for controlling air inlet way in plasma processing technology |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
| US20130065356A1 (en) * | 2010-08-12 | 2013-03-14 | Ovshinsky Innovation Llc | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies |
| CN103243311A (en) * | 2013-05-16 | 2013-08-14 | 合肥彩虹蓝光科技有限公司 | Gas transport reaction chamber with orthogonal perpendicular inlet gas/horizontal inlet gas on substrate surface |
| CN207425892U (en) * | 2017-10-27 | 2018-05-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of disperser suitable for silicon chip of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102087957A (en) * | 2009-12-03 | 2011-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for controlling air inlet way in plasma processing technology |
| US20130065356A1 (en) * | 2010-08-12 | 2013-03-14 | Ovshinsky Innovation Llc | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
| CN103243311A (en) * | 2013-05-16 | 2013-08-14 | 合肥彩虹蓝光科技有限公司 | Gas transport reaction chamber with orthogonal perpendicular inlet gas/horizontal inlet gas on substrate surface |
| CN207425892U (en) * | 2017-10-27 | 2018-05-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of disperser suitable for silicon chip of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783417A (en) * | 2019-11-08 | 2020-02-11 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
| CN110783417B (en) * | 2019-11-08 | 2021-06-29 | 国家纳米科学中心 | Method for manufacturing cone-shaped light trapping structure with adjustable density on silicon surface and prepared black silicon |
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