CN109346397A - The manufacturing method of N-shaped gallium nitride base board - Google Patents
The manufacturing method of N-shaped gallium nitride base board Download PDFInfo
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- CN109346397A CN109346397A CN201811108991.XA CN201811108991A CN109346397A CN 109346397 A CN109346397 A CN 109346397A CN 201811108991 A CN201811108991 A CN 201811108991A CN 109346397 A CN109346397 A CN 109346397A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 43
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001947 vapour-phase growth Methods 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 21
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 claims description 8
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 17
- 230000012010 growth Effects 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000006185 dispersion Substances 0.000 abstract description 5
- 230000008676 import Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical compound O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H01L21/2056—
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of N-shaped gallium nitride base board.A kind of manufacturing method of N-shaped gallium nitride base board, comprising: in the vapor phase growth of gallium nitride, other than raw material gallium and raw material nitrogen, import oxygen element or nitrogen oxide material.Remarkable result of the invention is: in the present invention, when making GaN with HVPE legal system, the unstrpped gas containing gallium material, nitrogen raw material, oxygen element is passed through the mode of reacting furnace by selection simultaneously, can inhibit the donor concentration of N-shaped GaN.Greatly reduce the interface state density of the N-shaped GaN after the completion of growth.But when being used to manufacture GaN electrical power conversion transistor for the finished product, the dispersion of frequency can reduce, improve maximum disruptive critical voltage.
Description
Technical field
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of N-shaped gallium nitride base board.
Background technique
In GaN semiconductor original part field, blue LED and laser diode etc. come into practical stage,
Most advanced research object also starts to shift from luminous original part to electronic original part gradually.Especially electrical power conversion transistor
Research be currently under the very prosperous stage.Electrical power conversion transistor, as switch original part composition frequency converter etc.
A part of power circuit, frequency converter can be motor sections by changing control of the frequency realization of alternating current to motor
It can control the optimal selection of equipment, while also in energy-saving type air conditioner, energy saving microwave oven and other electromagnetic heating type machine for kitchen uses, industry
It is had a wide range of applications in the transporting equipments such as motor and electric car, electric train.Presently the most the most commonly used is Si systems
Insulated gate bipolar transistor.
The electrical power conversion transistor being fabricated with GaN, selection is in dissimilar substrate (sapphire (α
Al2O3), silicon (Si), silicon carbide (SiC), GaAs (GaAs) etc.) on carry out the GaN substrate that heteroepitaxial growth obtains, at present
Such as high electron mobility transistor (HEMT) original part is manufactured that, so as to inquire into its application in high frequency original part
And needing the application in the more power-supply device of high voltage value.GaN has higher disruptive critical voltage compared with SiC, because
And by as taking over the secondary epoch electrical power conversion transistor of SiC by expectation.
The GaN substrate being commercially available currently on the market is all to be referred to as hydride gas-phase epitaxy (HVPE) method with a kind of
Crystalline growth method manufacture.The substrate that heteroepitaxial growth method obtains is substantially 2 inches of substrates.Because there is crystallization
Defect problem, so the substrate that diameter is more than 2 inches or more can not be produced.And price is the decades of times of Si substrate, in substrate
Penetration dislocation density reached 105~107cm-2?.It is big made from the methods of ammonia heat method (ammonothermalmethod)
Block GaN single crystal substrate is compared with using GaN substrate made from hetero-epitaxy grown layers method, and the density of threading dislocation wants small by upper 3~4
A order of magnitude.The technique is converted for electric energy and creates possibility with the realization of transistor (gaN series).But it is obtained at this time
Substrate price is hundreds times of SiC substrate price.As mentioned above, it is necessary, in order to realize the conversion of GaN electric energy with transistor substrate
Manufacture, the quality-improving and ever-larger diameters of GaN substrate be still an important issue project.At present, people still will be in xenogenesis base
HVPE method is used to make GaN substrate as most important prefered method by heteroepitaxial growth legal system on plate.
Fig. 1 is the sectional view that GaN electric power dress uses transistor instead.
As shown in Figure 1, the i type HaN electronics mobile layer that sequentially stack thickness is 3 μm in GaN substrate 11 using HVPE method
12 and with a thickness of 25 μm, carrier concentration be 2 × 1018cm-3N-shaped Al0.25Ga0.75N electron supply layer 13.Use CVD method heap
After product is with a thickness of the SiN film 14 of 20nm, the grid 16 that is made of Ni/Au is set in grid forming region, at the same in source electrode and
Opening portion is arranged in drain contact position, and constitutes source electrode 15 and drain electrode 17 with Ti/Au.GaN series HEMT electric energy is just completed in this way
Dress uses the essential structure of transistor instead.Two-dimensional electron gas 18 is present in N-shaped AlGaN electron supply layer 13 and GaN electronics moves
In the interface of dynamic layer 12, i.e. the access of electric current.
In the essential structure most importantly, N-shaped Al0.25Ga0.75N electron supply layer 13 and SiN film 14 by
Interface state.When the interface state density of N-shaped AlGaN electron supply layer 13 and SiN film 14 is big, GaN type electric energy dress will increase
The frequency dispersion for using transistor instead, the reason of becoming electric leakage.In general, the N-shaped AlGaN layer of electron supply layer 13
It is doped in AlGaN and is formed after Si, the displacement for relying on Si atom and Ga atom realizes n-type conductivity.Based on the face Ga
In the GaN substrate in face, after adulterating Si in AlGaN layer, the interface state density that will lead to AlGaN layer and SiN film increases.
In order to solve this problem, trial replaces previous Si to adulterate with oxygen doping.Because so the realization of N-shaped is logical
The displacement completion of oxygen atom and nitrogen-atoms is crossed, and the displacement realization N-shaped conduction for relying on Si atom and Ga atom being mentioned above
Type is different, because atom is smaller, so as to reduce the interface state density being mentioned above.It is related to think to mix in GaN crystallization
Miscellaneous oxygen element, the method for being referred to publicity in patent document (special open 2006-282504).
But there are the following problems for the method in the patent publicity: as the unstripped gas used during GaN crystalline growth
Body, ammonia (NH3) and HCl gas (HCl) in be mixed with moisture, carry out crystalline growth at this time, it is dense to will lead to N-shaped carrier
It spends unstable.
Summary of the invention
The present invention in view of the drawbacks of the prior art, provides a kind of manufacturing method of N-shaped gallium nitride base board.
The present invention is implemented as follows: a kind of manufacturing method of N-shaped gallium nitride base board, comprising: raw in the gas phase of gallium nitride
In length, other than raw material gallium and raw material nitrogen, oxygen element or nitrogen oxide material are imported.
A kind of manufacturing method of N-shaped gallium nitride base board as described above, wherein the material of the composition nitrogen oxide
It is from NO, NO2、N2O、N2O3、N2O4、N2O5In at least material of the selection containing one of molecule.
A kind of manufacturing method of N-shaped gallium nitride base board as described above, wherein the vapor growth method is HVPE method.
Remarkable result of the invention is: in the present invention, when making GaN with HVPE legal system, selection will contain gallium material, nitrogen
Raw material, oxygen element unstrpped gas be passed through the mode of reacting furnace simultaneously, the donor concentration of N-shaped GaN can be inhibited.Greatly reduce life
The interface state density of N-shaped GaN after the completion of length.But it, can when being used to manufacture GaN electrical power conversion transistor for the finished product
To reduce the dispersion of frequency, maximum disruptive critical voltage is improved.
Detailed description of the invention
Fig. 1 is the schematic diagram that the principle of the invention is constituted.
Fig. 2 is the rough sectional view that the crystalline growth device of GaN crystallization is made with HVPE legal system.
Fig. 3 is the example of the C-V characteristic of MOS capacity formed in n-type GaN layer in the present invention.
In figure: 1. hot wall tcs response furnaces, 2. heating equipments, 3. unstrpped gas ingress pipes, 4. unstrpped gas ingress pipes, 5.
Carrier gas ingress pipe, 6.Ga holding tank, 7.GaN substrate, 8. exhausts, 11.GaN substrate, 12.i type GaN electronics mobile layer, 13.n type
Al0.25Ga0.75Grid that source electrode that N electron supply layer, 14.SiN film, 15. are made of Ti/Au, 16. are made of Ni/Au, 17.
The drain electrode that is made of Ti/Au, 18. two-dimensional electron gas (2DEG).
Specific embodiment
About HVPE method, with being illustrated for Fig. 2.Heating device 2 is set around hot wall type reacting furnace 1.In order to
Unstrpped gas is imported into reacting furnace, and unstrpped gas ingress pipe 3 and carrier gas ingress pipe 5 are set.In the inner space of reacting furnace 1
Middle setting Ga holding tank 6, and the Ga as raw material is packed into Ga holding tank 6.Then it is heated with heating device 2.Gas
The opening of body ingress pipe 4 imports H towards Ga holding tank 62With the mixed gas of HCl gas.The opening of gas introduction tube 3 is in Ga
The downstream position of holding tank 6.It is past to import H herein2And NH3Gas.
There is the pedestal (not drawing in figure) that can arbitrarily rotate, go up and down in the inner space of reacting furnace 1.Pedestal is by turning
Axis support.GaN substrate 7 is placed in the top of pedestal, heater 2 starts to heat substrate 7.H2With the mixing of HCl gas composition
Gas is inwardly supplied by ingress pipe 4, and the Ga blowed in Ga holding tank 6 melts liquid, is generated through chemical reaction and is produced among gaseous state
Object --- gallium chloride (GaCl).GaCl is contacted near the GaN substrate 7 being heated with the ammonia imported from ingress pipe 3, GaCl
And NH3It chemically reacts, GaN crystallization is synthesized in GaN substrate 7.Fail to participate in the gas of crystalline growth then under reacting furnace 1
Side exhaust 8 is swum, furnace body is discharged.
[example 1]
In order to carry out experimental verification to the program, evaluating characteristics are carried out to the interfacial characteristics that N-shaped metal-oxide-semiconductor original part uses.
It is as follows to study process, GaN substrate is placed in reacting furnace 1, facilitates the crystalline growth of n-type GaN layer using NVPE method.Crystallization life
Long temperature is 1020 degrees Celsius.NH3Partial pressure be 0.2atm (2 × 104Pa), the partial pressure of HCl is 1 × 10- 2atm(103Pa)、N2The partial pressure of O is 5 × 10-4atm(5×106Pa).After 5 minutes crystalline growths, alms giver is made
Concentration is 1~5 × 1016cm-3, with a thickness of 3 μm of n-type GaN layers.
Then insulating film is made.Using plasma CVD, ethyl orthosilicate (TEOS) is used as raw material, reaction environment setting
It is 350 degrees Celsius, allows SiO2It is stacked to thick 100nm.Then with metal film coated, in SiO2The upper circle that aluminum is made by being deposited
Electrode.Whole face is overleaf covered into upper gold using vapour deposition method.Metal-oxide-semiconductor original part is thus formd in the longitudinal direction.
Fig. 3 is the frequency dispersion value of capacity-voltage (C-V) characteristic measured.In figure, C-V characteristic is presented one substantially
Smoothed curve, measure frequency does not have to find the dispersion of frequency in the range of 1MHz to 20Hz substantially.It should be the result shows that interfacial state
Density is very small, it is possible thereby to confirm SiO2The conductor side interface state density at the interface /GaN is very small.
In this example, in order to carry out experimental verification to the present invention instead, crystal is used to representative GaN electric power dress
Triode --- the interfacial characteristics in N-shaped metal-oxide-semiconductor original part are evaluated.Itself the result shows that, this method manufacture GaN electric power dress
It is constantly effective to use transistor instead.
In this example, to material --- the nitrous oxide (N for constituting nitrogen oxides2O it) is illustrated.But it removes
N2It, can also be from nitric oxide (NO), nitrogen dioxide (NO outside O2), nitrogen trioxide (N2O3), dinitrogen tetroxide (N2O4), five oxygen
Change phenodiazine (N2O5) in select material.
Claims (3)
1. a kind of manufacturing method of N-shaped gallium nitride base board characterized by comprising in the vapor phase growth of gallium nitride, raw material gallium
Other than raw material nitrogen, oxygen element or nitrogen oxide material are imported.
2. a kind of manufacturing method of N-shaped gallium nitride base board as described in claim 1, it is characterised in that: the composition nitrogen
The material of oxide is from NO, NO2、N2O、N2O3、N2O4、N2O5In at least material of the selection containing one of molecule.
3. a kind of manufacturing method of N-shaped gallium nitride base board as described in claim 1, it is characterised in that: the vapor phase growth
Method is HVPE method.
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| CN201811108991.XA CN109346397A (en) | 2018-09-21 | 2018-09-21 | The manufacturing method of N-shaped gallium nitride base board |
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| CN201811108991.XA CN109346397A (en) | 2018-09-21 | 2018-09-21 | The manufacturing method of N-shaped gallium nitride base board |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237795A (en) * | 1998-05-28 | 1999-12-08 | 住友电气工业株式会社 | Gallium nitride monocrystal substrate and its manufacturing method |
| KR20010093026A (en) * | 2000-03-28 | 2001-10-27 | 김효근 | METHOD FOR FABRICATING A N-TYPE THIN FILM OF GaN GROUP BY USING A PLASMA TREATMENT |
| EP1249522A2 (en) * | 2001-04-12 | 2002-10-16 | Sumitomo Electric Industries, Ltd. | Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| CN101311379A (en) * | 2007-05-02 | 2008-11-26 | 住友电气工业株式会社 | Gallium nitride substrate and gallium nitride film deposition method |
| CN103383959A (en) * | 2013-07-04 | 2013-11-06 | 西安电子科技大学 | Crosswise overgrowth one-dimensional electron gas GaN-base high electron mobility transistor (HEMT) device and manufacturing method thereof |
| CN108538714A (en) * | 2018-04-19 | 2018-09-14 | 中国电子科技集团公司第十三研究所 | The preparation method of III group nitride material of p-type |
-
2018
- 2018-09-21 CN CN201811108991.XA patent/CN109346397A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237795A (en) * | 1998-05-28 | 1999-12-08 | 住友电气工业株式会社 | Gallium nitride monocrystal substrate and its manufacturing method |
| EP0967664A1 (en) * | 1998-05-28 | 1999-12-29 | Sumitomo Electric Industries, Ltd. | Gallium nitride single crystal substrate and method of producing the same |
| KR20010093026A (en) * | 2000-03-28 | 2001-10-27 | 김효근 | METHOD FOR FABRICATING A N-TYPE THIN FILM OF GaN GROUP BY USING A PLASMA TREATMENT |
| EP1249522A2 (en) * | 2001-04-12 | 2002-10-16 | Sumitomo Electric Industries, Ltd. | Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| CN101311379A (en) * | 2007-05-02 | 2008-11-26 | 住友电气工业株式会社 | Gallium nitride substrate and gallium nitride film deposition method |
| CN103383959A (en) * | 2013-07-04 | 2013-11-06 | 西安电子科技大学 | Crosswise overgrowth one-dimensional electron gas GaN-base high electron mobility transistor (HEMT) device and manufacturing method thereof |
| CN108538714A (en) * | 2018-04-19 | 2018-09-14 | 中国电子科技集团公司第十三研究所 | The preparation method of III group nitride material of p-type |
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