CN109341907A - A kind of pressure sensor - Google Patents
A kind of pressure sensor Download PDFInfo
- Publication number
- CN109341907A CN109341907A CN201811444314.5A CN201811444314A CN109341907A CN 109341907 A CN109341907 A CN 109341907A CN 201811444314 A CN201811444314 A CN 201811444314A CN 109341907 A CN109341907 A CN 109341907A
- Authority
- CN
- China
- Prior art keywords
- pressure
- silicon
- sensing chip
- layer
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 239000000919 ceramic Substances 0.000 claims abstract description 44
- 239000012790 adhesive layer Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 38
- 230000035945 sensitivity Effects 0.000 claims description 23
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004568 cement Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Abstract
The embodiment of the invention discloses a kind of pressure sensors.The pressure sensor includes: ceramic bases and Silicon pressure sensing chip；The ceramic bases include the first surface and second surface being oppositely arranged, and the first surface setting is fluted as pressure back chamber, and the pressure sensing chip is attached at second surface region corresponding with the groove by adhesive layer.The embodiment of the invention provides a kind of anticorrosive, high temperature resistant, high stability, high-precision and pressure sensors at low cost.
Description
Technical field
The present embodiments relate to pressure sensing technology more particularly to a kind of pressure sensors.
Background technique
The principle of silicon piezoresistive pressure sensor is the piezoresistive effect using semiconductor material, is most widely used a few days ago
A kind of pressure sensor, with high sensitivity, dynamic response is fast, measurement accuracy is high, stability is good, operating temperature range is wide,
It is easy to small-sized micromation, is convenient for the advantages that producing in batches and is easy to use.
However existing silicon pressure sensor corrosion resistance is insufficient, is not suitable for working as applied to adverse circumstances such as etchant gas
In.
Summary of the invention
The present invention provides a kind of pressure sensor, with provide a kind of anticorrosive, high temperature resistant, high stability, high-precision and
Pressure sensor at low cost.
The embodiment of the invention provides a kind of pressure sensor, which includes:
Ceramic bases and Silicon pressure sensing chip；
The ceramic bases include the first surface and second surface being oppositely arranged, and fluted work is arranged in the first surface
Chamber is carried on the back for pressure, the pressure sensing chip is attached at second surface region corresponding with the groove by adhesive layer.
Optionally, the adhesive layer is glass cement.
Optionally, the Silicon pressure sensing chip is set to the fringe region of the groove.
Optionally, the Silicon pressure sensing chip is set to the center of groove.
Optionally, the ceramic bases be provided with the region of the groove with a thickness of 0.1 millimeter -0.5 millimeter.
Optionally, the shape of the groove is cylinder, and the diameter of the groove is 5 millimeters -10 millimeters.
Optionally, the Silicon pressure sensing chip is square, and the side length of the Silicon pressure sensing chip is 1 millimeter of -2 milli
Rice.
Optionally, the Silicon pressure sensing chip include the silicon base being cascading, insulating layer, pressure sensitivity resistive layer with
And protective layer；
Further include the metal electrode being electrically connected with the pressure sensitivity resistive layer, the protective layer cover the pressure sensitivity resistive layer and
Expose the metal electrode.
Optionally, the insulating layer is silicon oxide layer, and the pressure sensitivity resistive layer is silicon resistor layer, and the protective layer is oxidation
Silicon layer or silicon nitride layer.
Optionally, the silicon base with a thickness of 30 microns -50 microns；
The insulating layer with a thickness of 0.1 micron -2 microns；
0.5 micron -3 microns of the thickness of the pressure sensitivity resistive layer；
The protective layer with a thickness of 0.1 micron -2 microns.
Silicon pressure sensing chip is attached at ceramic bases surface and forms pressure sensor by the embodiment of the present invention, due to ceramics
Material has the characteristic of high resiliency, anticorrosive, wear-resistant, shock resistance and vibration, and Silicon pressure sensing chip high sensitivity, dynamic
Response is fast, measurement accuracy is high, stability is good, operating temperature range is wide, is easy to small-sized micromation, is convenient for batch production and uses
The advantages that facilitating, by using the mode by ceramic bases in conjunction with Silicon pressure sensing chip, so that pressure sensor has simultaneously
There is the advantages of the two, and Silicon pressure sensing chip is directly attached to ceramic bases surface, simple process, production by the present embodiment
It is at low cost, therefore pressure sensor provided in this embodiment has characteristic at low cost.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of pressure sensor provided in an embodiment of the present invention；
Fig. 2 is the schematic diagram of another pressure sensor provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic diagram of Silicon pressure sensing chip provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of schematic diagram of pressure sensor provided in an embodiment of the present invention, with reference to Fig. 1, the pressure sensor packet
It includes:
Ceramic bases 10 and Silicon pressure sensing chip 20；
Ceramic bases 10 include the first surface 11 and second surface 12 being oppositely arranged, and first surface 11 is arranged fluted 13
Chamber is carried on the back as pressure, pressure sensing chip 20 is attached at the region corresponding with groove 13 of second surface 12 by adhesive layer 30.
Specifically, groove 13 is arranged in ceramic bases 10, the corresponding region of groove 13 is as pressure sensitive area, by silicon pressure
Power sensing chip 20 is attached at the pressure sensitive area of ceramic bases 10.Due to the thickness of the region ceramic substrate 10 of setting groove 13
It is relatively thin, it ensure that ceramic bases 10 are under pressure when acting on, there is biggish deformation, to guarantee pressure detecting precision.And
The area thickness of the not set groove 13 of ceramic bases 10 is thicker, is on the one hand used to support the ceramic membrane in pressure sensitive area, another
Aspect ensure that the mechanical strength with higher of ceramic bases 10, be easily installed use.
The present embodiment forms pressure sensor by the way that Silicon pressure sensing chip 20 is attached at 10 surface of ceramic bases, by
There is the characteristic of high resiliency, anticorrosive, wear-resistant, shock resistance and vibration in ceramic material, and Silicon pressure sensing chip 20 is sensitive
Degree is high, dynamic response is fast, measurement accuracy is high, stability is good, operating temperature range is wide, is easy to small-sized micromation, is raw convenient for batch
The advantages that producing and be easy to use, by way of being combined ceramic bases 10 with Silicon pressure sensing chip 20, so that pressure passes
Sensor has the advantages that the two simultaneously, and Silicon pressure sensing chip 20 is directly attached to 10 table of ceramic bases by the present embodiment
Face, simple process, low manufacture cost, therefore the characteristic that pressure sensor provided in this embodiment is at low cost.
Optionally, adhesive layer 30 is glass cement.
Specifically, since glass cement has preferable caking property, and faying face stress distribution is uniform, to silicon pressure sensor
20 and ceramic bases 10 without heat affecting and deformation, therefore by using glass cement as adhesive layer 30, can effectively avoid gluing
Knot 30 pairs of ceramic bases 10 of layer and the deformation of Silicon pressure sensing chip 20 have an impact, and guarantee pressure sensor pressure with higher
Power detection accuracy.
Optionally, Silicon pressure sensing chip 20 is set to the fringe region of groove 13.
Specifically, ceramic bases 10 can generate concave curved deformation under pressure, inventor is had found by emulation experiment, will
Marginal position of the sticking position of Silicon pressure sensing chip 20 closer to the groove 13 of ceramic bases 10, Silicon pressure sensing chip 20
The tensile stress for the ceramic bases 10 being subject to is bigger, and the relative deformation amount that Silicon pressure sensing chip 20 occurs is bigger.And Silicon pressure
The sticking position of sensing chip 20 is closer to the marginal position of the groove 13 of ceramic bases 10, and pressure sensing chip 20 is to ceramic base
The mechanical deformation influence at bottom 10 is smaller, and the deformation quantity that uniform pressure acts on lower ceramic bases 10 is bigger.Therefore, by by Silicon pressure
Sensing chip 20 is placed in the fringe region of the groove 13 of ceramic bases 10, so that pressure sensor detection with higher is sensitive
Degree.
It should be noted that the region at the edge of fringe region, that is, adjacent recess 13 of groove 13, as long as guaranteeing Silicon pressure
Sensing chip 20 is entirely located in the corresponding region of groove 13.Illustratively, when groove 13 is cylindrical, if groove 13
Radius is r, and Silicon pressure sensing chip 20 can be set to the region that the center of circle apart from groove 13 is greater than 0.5r, illustratively may be used
To be set as at the center of circle 0.75r apart from groove 13.
Fig. 2 is the schematic diagram of another pressure sensor provided in an embodiment of the present invention, optionally, with reference to Fig. 2, Silicon pressure
Sensing chip 20 is set to the center of groove 13.In this way, the contraposition fitting that can reduce silicon pressure sensor 20 is difficult
Degree reduces technique time-consuming and process costs.
Optionally, it is 0.1 millimeter -0.5 millimeter that the thickness d in fluted 13 region, which is arranged, in ceramic bases 10.
In this way, the ceramic bases 10 of groove 13 can generate biggish when guaranteeing that pressure is applied to ceramic bases 10
Deformation improves pressure detecting precision so that Silicon pressure sensing chip 20 has bigger deformation.
Optionally, the shape of groove 13 is cylinder.
Specifically, that is, the pressure sensitive region of ceramic bases 10 is circle by setting cylindrical for groove 13, so that
When pressure is applied to ceramic bases 10, the deformation of 10 pressure sensitive region all directions of ceramic bases is more uniform, avoids certain
Stress concentration, which occur, in a little positions causes ceramic bases 10 to be easily damaged, and improves the service life of pressure sensor.
Optionally, Silicon pressure sensing chip 20 is square, and the side length of Silicon pressure sensing chip 20 is 1 millimeter -2 millimeters,
The diameter of groove 13 is 5 millimeters -10 millimeters.
Specifically, guaranteeing that it is larger that ceramic bases 10 have by setting 5 millimeters -10 millimeters for the diameter of groove 13
Pressure-sensitive area, and under the premise of the deformation of ceramic bases 10 meets the measurement range of Silicon pressure sensing chip 20, so that ceramic
The size of substrate 10 is smaller, to guarantee that the size of pressure sensor is smaller.
Fig. 3 is a kind of schematic diagram of Silicon pressure sensing chip provided in an embodiment of the present invention, with reference to Fig. 3, Silicon pressure sensing
Chip 20 includes silicon base 21, insulating layer 22, pressure sensitivity resistive layer 23 and the protective layer 24 being cascading；
It further include the metal electrode 25 being electrically connected with pressure sensitivity resistive layer 23, protective layer 24 covers pressure sensitivity resistive layer 23 and exposed
Metal electrode 25 out.
Wherein, pressure sensitivity resistive layer 23 may include multiple pressure sensitivity resistance, and multiple pressure sensitivity resistance form electric bridge, such as favour stone electricity
Bridge, resistance value changes when pressure sensitivity resistance induction pressure deformation, and the electric signal of Wheatstone bridge output changes, according to telecommunications
Number variation can determine pressure size.Metal electrode 25 is used for ohmically to pressure sensitivity resistance input electrical signal, or output pressure sensitivity
Electric signal.
Optionally, insulating layer 22 be silicon oxide layer, pressure sensitivity resistive layer 23 be silicon resistor layer, protective layer 24 be silicon oxide layer or
Silicon nitride layer.
Optionally, silicon base 21 with a thickness of 30 microns -50 microns；Insulating layer 22 with a thickness of 0.1 micron -2 microns；Pressure
0.5 micron -3 microns of the thickness of electrification resistance layer 23；Protective layer 24 with a thickness of 0.1 micron -2 microns.In this way, making silicon pressure
The deformation occurred when tension of the power sensing chip 20 by ceramic bases 10 is larger, guarantees that pressure sensing chip 20 is with higher
Pressure sensitive sensitivity.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of pressure sensor characterized by comprising
Ceramic bases and Silicon pressure sensing chip；
The ceramic bases include the first surface and second surface being oppositely arranged, and the first surface setting is fluted as pressure
Power carries on the back chamber, and the pressure sensing chip is attached at second surface region corresponding with the groove by adhesive layer.
2. pressure sensor according to claim 1, it is characterised in that:
The adhesive layer is glass cement.
3. pressure sensor according to claim 1, it is characterised in that:
The Silicon pressure sensing chip is set to the fringe region of the groove.
4. pressure sensor according to claim 1, it is characterised in that:
The Silicon pressure sensing chip is set to the center of groove.
5. pressure sensor according to claim 1, it is characterised in that:
The ceramic bases be provided with the region of the groove with a thickness of 0.1 millimeter -0.5 millimeter.
6. pressure sensor according to claim 5, it is characterised in that:
The shape of the groove is cylinder, and the diameter of the groove is 5 millimeters -10 millimeters.
7. pressure sensor according to claim 6, it is characterised in that:
The Silicon pressure sensing chip is square, and the side length of the Silicon pressure sensing chip is 1 millimeter -2 millimeters.
8. pressure sensor according to claim 1, it is characterised in that:
The Silicon pressure sensing chip includes the silicon base being cascading, insulating layer, pressure sensitivity resistive layer and protective layer；
It further include the metal electrode being electrically connected with the pressure sensitivity resistive layer, the protective layer covers the pressure sensitivity resistive layer and exposed
The metal electrode out.
9. pressure sensor according to claim 8, it is characterised in that:
The insulating layer is silicon oxide layer, and the pressure sensitivity resistive layer is silicon resistor layer, and the protective layer is silicon oxide layer or nitridation
Silicon layer.
10. pressure sensor according to claim 9, it is characterised in that:
The silicon base with a thickness of 30 microns -50 microns；
The insulating layer with a thickness of 0.1 micron -2 microns；
0.5 micron -3 microns of the thickness of the pressure sensitivity resistive layer；
The protective layer with a thickness of 0.1 micron -2 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444314.5A CN109341907A (en) | 2018-11-29 | 2018-11-29 | A kind of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444314.5A CN109341907A (en) | 2018-11-29 | 2018-11-29 | A kind of pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109341907A true CN109341907A (en) | 2019-02-15 |
Family
ID=65318515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811444314.5A Pending CN109341907A (en) | 2018-11-29 | 2018-11-29 | A kind of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109341907A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112857631A (en) * | 2021-04-23 | 2021-05-28 | 武汉飞恩微电子有限公司 | Core structure and pressure sensor |
| CN116295967A (en) * | 2023-05-23 | 2023-06-23 | 无锡胜脉电子有限公司 | High-voltage MEMS pressure sensor chip and preparation method of chip and sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112857631A (en) * | 2021-04-23 | 2021-05-28 | 武汉飞恩微电子有限公司 | Core structure and pressure sensor |
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| CN116295967A (en) * | 2023-05-23 | 2023-06-23 | 无锡胜脉电子有限公司 | High-voltage MEMS pressure sensor chip and preparation method of chip and sensor |
| CN116295967B (en) * | 2023-05-23 | 2023-08-11 | 无锡胜脉电子有限公司 | High-voltage MEMS pressure sensor chip and preparation method of chip and sensor |
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