CN109338313A - A kind of aluminium alloy target and preparation method thereof - Google Patents
A kind of aluminium alloy target and preparation method thereof Download PDFInfo
- Publication number
- CN109338313A CN109338313A CN201811470627.8A CN201811470627A CN109338313A CN 109338313 A CN109338313 A CN 109338313A CN 201811470627 A CN201811470627 A CN 201811470627A CN 109338313 A CN109338313 A CN 109338313A
- Authority
- CN
- China
- Prior art keywords
- aluminium alloy
- alloy target
- aluminium
- silicon
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/12—Alloys based on aluminium with copper as the next major constituent
- C22C21/14—Alloys based on aluminium with copper as the next major constituent with silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/057—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
The invention belongs to materials processing technology fields, and in particular to a kind of aluminium alloy target and preparation method thereof.The aluminium alloy target prepares aluminium alloy target using the copper of corresponding atomic percent, silicon and rare earth element as raw material, improves electric conductivity, corrosion resistance and the antioxygenic property of the aluminium alloy target.Specifically, the addition of copper improves the electric conductivity of the aluminium alloy target, the addition of silicon changes the thermal expansion coefficient of the aluminium alloy target, the compressive residual stress generated in film is eliminated, so that eliminating film layer plays packet phenomenon, improves the surface quality of sputter coating film layer.The preparation method of aluminium alloy target of the invention, master alloy is first made with whole copper, silicon, rare earth element and part aluminium mixed melting, the preparation process of the master alloy make copper, silicon and rare earth element preferably with aluminium melting mixing, ingot casting is melted with the aluminium of the good aluminium-silicon-copper-rare earth alloy of melting mixing and remainder again, to solve silicon, the problems such as copper infusibility melts and ingredient is uniform, obtain the uniform aluminium alloy target of ingredient.
Description
Technical field
The invention belongs to materials processing technology fields, and in particular to a kind of aluminium alloy target and preparation method thereof.
Background technique
In present LCD panel market, the Thin Film Transistor-LCD (TFT- of transistor switch pixel is utilized
LCD) because the display technology of its high response and high definition is known as the mainstream of liquid crystal display.Currently, aluminium alloy target is to make cloth
The main material of line layer film is mainly responsible for omicronff signal transmission to TFT, and therefore, the characteristic of aluminium alloy target is to TFT-LCD
Performance have direct influence.
Aluminium has better electric conductivity, but fine aluminium film surface in the heating process for carrying out sputter coating will appear
Protrusion and packet phenomenon drastically influence the quality of liquid crystal display panel so as to cause panel short circuit, are based on this, by introducing alloy
Member usually solve wiring layer film-equality problem, but the incorporation of different-alloy element can have to the electric conductivity of aluminium it is unpredictable
Influence, rationally designed and selected therefore, it is necessary to the component to aluminium alloy target.
Summary of the invention
Based on problem above, one purpose of the invention is to provide a kind of aluminium suitable for panel display screen conductive film
Alloy target material, can after sputter coating on panel or substrate formed conduct electricity very well, the wiring layer film that resistance value is low.
Secondly purpose is to provide a kind of preparation method of aluminium alloy target.
The technical solution of the present invention is as follows:
The present invention provides a kind of aluminium alloy target, with atomic percentage, comprising: copper 0.1-0.5%, silicon 0.1-0.5%
With rare earth element 0.01-0.1%, surplus is aluminium.
Aluminium alloy target of the invention, aluminium alloy target different from the past, considered critical copper, silicon additive amount exist
Within 0.1-0.5% atomic percent, while improving the aluminium alloy target electric conductivity, the surface matter of plated film is also improved
Amount, improves its anticorrosive and antioxygenic property, increases the mechanical performance of the aluminium alloy target.
Aluminium alloy target according to the present invention, the rare earth element are lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium
One or more of.Preferably, the rare earth element is lanthanum and/or cerium.
Aluminium alloy target according to the present invention, electrical resistivity range are 4.5~3.0 × 10-6Ω cm, resistivity is lower than height
Fine aluminium target fully meets the requirement of current liquid crystal display aluminium alloy target.
The present invention provides the preparation method of the aluminium alloy target, comprising the following steps:
(1) prepare master alloy: master alloy is made in melting after being mixed with copper, silicon, rare earth element and part aluminium；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained.
The preparation method of aluminium alloy target according to the present invention, it is preferred that in step (1), with atomic percentage, institute
The total amount for stating copper, silicon and rare earth element is the 1-5% of master alloy, obtains the homogeneity of ingredients of the master alloy further
Guarantee protect the compositional uniformity of the aluminium alloy target also to guarantee going on smoothly for step (2) vacuum casting
Card.
The preparation method of aluminium alloy target according to the present invention is obtained described in step (1) using arc melting process
Master alloy；The additive amount of the silicon, copper and rare earth element according to the present invention, melting heating temperature are 800-900 DEG C；Set-up procedure
(2) in, vacuum casting temperature is 730-750 DEG C, and vacuum degree is less than 0.01Pa.
The preparation method of aluminium alloy target according to the present invention, according to the additive amount of the silicon, copper and rare earth element, adjustment
Forging temperature in step (3) is 360-480 DEG C.
The preparation method of aluminium alloy target according to the present invention, according to the additive amount of the silicon, copper and rare earth element, adjustment
Rolling temperature in step (3) is 320-450 DEG C.
The preparation method of aluminium alloy target according to the present invention, in step (3), the total deformation after rolling is 50-
70%.
The aluminium alloy target crystalline grains obtained after the above forging, rolling and heat treatment integrated treatment more refine, uniformly,
Its mechanical performance is also further optimized.
The preparation method of aluminium alloy target according to the present invention, according to the additive amount of the silicon, copper and rare earth element, adjustment
Heat treatment temperature in step (3) is 320-450 DEG C, and the time is 10-24 hours.
The invention has the benefit that
Aluminium alloy target of the invention prepares aluminium alloy using the copper of corresponding atomic percent, silicon and rare earth element as raw material
Target improves electric conductivity, corrosion resistance and the antioxygenic property of the aluminium alloy target.Specifically, the addition of copper makes described
The electric conductivity of aluminium alloy target improves, and the addition of silicon changes the thermal expansion coefficient of the aluminium alloy target, eliminates and produces in film
Raw compressive residual stress improves the surface quality of sputter coating film layer so that eliminating film layer plays packet phenomenon.
The preparation method of aluminium alloy target of the invention, first with whole copper, silicon, rare earth element and part aluminium mixed melting
It is made master alloy, the preparation process of the master alloy makes copper, silicon and rare earth element preferably with aluminium melting mixing, then mixed to melt
The aluminium of the aluminium-silicon-copper-rare earth alloy and remainder that get togather melts ingot casting, to solve the problems, such as that the infusibilities such as silicon, copper melt, obtains
The uniform aluminium alloy target of ingredient.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, technical solution of the present invention will be carried out below
Detailed description.Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art are obtained all without making creative work
Other embodiment belongs to the range that the present invention is protected.
Embodiment 1
The present invention provides aluminium alloy target, with atomic percentage, comprising: copper 0.1%, silicon 0.5% and rare earth element
0.01%, surplus is aluminium；
The rare earth element is lanthanum.
The preparation method of the aluminium alloy target, which comprises the following steps:
(1) it prepares master alloy: female conjunction is made through electric arc melting after mixing with whole copper, silicon, rare earth element and part aluminium
Gold, melting heating temperature are 800 DEG C；With atomic percentage, the total amount of the copper, silicon and rare earth element is the 1- of master alloy
5%；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；Vacuum casting temperature is 750 DEG C, and vacuum degree is less than 0.01Pa；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained；
Forging temperature is 360 DEG C；Rolling temperature is 450 DEG C；Total deformation after rolling is 50%；
Heat treatment temperature is 450 DEG C, and the time is 10 hours.
Embodiment 2
The present invention provides aluminium alloy target, with atomic percentage, comprising: copper 0.5%, silicon 0.1% and rare earth element
0.1%, surplus is aluminium；
The rare earth element is lanthanum and cerium.
The preparation method of the aluminium alloy target, which comprises the following steps:
(1) it prepares master alloy: female conjunction is made through electric arc melting after mixing with whole copper, silicon, rare earth element and part aluminium
Gold, melting heating temperature are 900 DEG C；With atomic percentage, the total amount of the copper, silicon and rare earth element is the 1% of master alloy；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；Vacuum casting temperature is 730 DEG C, and vacuum degree is less than 0.01Pa；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained；
Forging temperature is 480 DEG C；Rolling temperature is 320 DEG C；Total deformation after rolling is 70%；
Heat treatment temperature is 320 DEG C, and the time is 24 hours.
Embodiment 3
The present invention provides aluminium alloy target, with atomic percentage, comprising: copper 0.2%, silicon 0.3% and rare earth element
0.05%, surplus is aluminium；
The rare earth element is lanthanum, cerium, praseodymium, neodymium and promethium.
The preparation method of the aluminium alloy target, which comprises the following steps:
(1) it prepares master alloy: female conjunction is made through electric arc melting after mixing with whole copper, silicon, rare earth element and part aluminium
Gold, melting heating temperature are 850 DEG C；With atomic percentage, the total amount of the copper, silicon and rare earth element is the 2% of master alloy；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；Vacuum casting temperature is 740 DEG C, and vacuum degree is less than 0.01Pa；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained；
Forging temperature is 420 DEG C；Rolling temperature is 400 DEG C；Total deformation after rolling is 60%；
Heat treatment temperature is 400 DEG C, and the time is 18 hours.
Embodiment 4
The present invention provides aluminium alloy target, with atomic percentage, comprising: copper 0.5%, silicon 0.1% and rare earth element
0.05%, surplus is aluminium；
The rare earth element is cerium.
The preparation method of the aluminium alloy target, which comprises the following steps:
(1) it prepares master alloy: female conjunction is made through electric arc melting after mixing with whole copper, silicon, rare earth element and part aluminium
Gold, melting heating temperature are 820 DEG C；With atomic percentage, the total amount of the copper, silicon and rare earth element is the 4% of master alloy；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；Vacuum casting temperature is 750 DEG C, and vacuum degree is less than 0.01Pa；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained；
Forging temperature is 450 DEG C；Rolling temperature is 380 DEG C；Total deformation after rolling is 70%；
Heat treatment temperature is 420 DEG C, and the time is 24 hours.
Embodiment 5
The present invention provides aluminium alloy target, with atomic percentage, comprising: copper 0.5%, silicon 0.5% and rare earth element
0.1%, surplus is aluminium；
The rare earth element is lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium and holmium.
The preparation method of the aluminium alloy target, which comprises the following steps:
(1) it prepares master alloy: female conjunction is made through electric arc melting after mixing with whole copper, silicon, rare earth element and part aluminium
Gold, melting heating temperature are 900 DEG C；With atomic percentage, the total amount of the copper, silicon and rare earth element is the 2% of master alloy；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy casting
Ingot；Vacuum casting temperature is 750 DEG C, and vacuum degree is less than 0.01Pa；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained；
Forging temperature is 450 DEG C；Rolling temperature is 420 DEG C；Total deformation after rolling is 70%；
Heat treatment temperature is 420 DEG C, and the time is 24 hours.
Aluminium alloy target made from above embodiments, electrical resistivity range are 4.5~3.0 × 10-6Ω cm, compared with rafifinal target
The resistivity of material resistivity reduces, and its anti-oxidant and resistance to corrosion performance is improved, the wiring layer that sputter coating obtains
Film plays packet phenomenon and significantly improves, and improves the surface quality of wiring layer film, is suitable for big panel liquid crystal display screen
The target of conductive film uses.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of aluminium alloy target, which is characterized in that with atomic percentage, comprising: copper 0.1-0.5%, silicon 0.1-0.5% and
Rare earth element 0.01-0.1%, surplus are aluminium.
2. aluminium alloy target according to claim 1, which is characterized in that the rare earth element be lanthanum, cerium, praseodymium, neodymium, promethium,
One or more of samarium, europium, gadolinium, terbium, dysprosium, holmium.
3. aluminium alloy target according to claim 1, which is characterized in that electrical resistivity range is 4.5~3.0 × 10-6Ω·
cm。
4. the preparation method of any aluminium alloy target of claim 1-3, which comprises the following steps:
(1) prepare master alloy: master alloy is made in melting after being mixed with copper, silicon, rare earth element and part aluminium；
(2) it prepares aluminium alloy cast ingot: the master alloy and residual Al is mixed, carry out vacuum casting, obtain aluminium alloy cast ingot；
(3) it is plastically deformed: the aluminium alloy cast ingot being forged, rolled and is heat-treated, aluminium alloy target is obtained.
5. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (1), with atom hundred
Divide than meter, the total amount of the copper, silicon and rare earth element is the 1-5% of master alloy.
6. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (1), using electric arc
Melting method obtains the master alloy, and melting heating temperature is 800-900 DEG C；In step (2), vacuum casting temperature is 730-
750 DEG C, vacuum degree is less than 0.01Pa.
7. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (3), forging temperature
It is 360-480 DEG C.
8. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (3), rolling temperature
It is 320-450 DEG C.
9. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (3), after rolling
Total deformation is 50-70%.
10. the preparation method of aluminium alloy target according to claim 4, which is characterized in that in step (3), heat treatment
Temperature is 320-450 DEG C, and the time is 10-24 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811470627.8A CN109338313A (en) | 2018-12-04 | 2018-12-04 | A kind of aluminium alloy target and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811470627.8A CN109338313A (en) | 2018-12-04 | 2018-12-04 | A kind of aluminium alloy target and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109338313A true CN109338313A (en) | 2019-02-15 |
Family
ID=65319836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811470627.8A Pending CN109338313A (en) | 2018-12-04 | 2018-12-04 | A kind of aluminium alloy target and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109338313A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110468312A (en) * | 2019-09-26 | 2019-11-19 | 常州斯威克新材料科技有限公司 | A kind of photovoltaic reflective membrane anticorrosion aluminium target and preparation method thereof and aluminum alloy films |
| CN110592406A (en) * | 2019-10-10 | 2019-12-20 | 新疆众和股份有限公司 | Preparation method of high-purity aluminum-copper alloy target blank for sputtering |
| CN111266586A (en) * | 2020-03-02 | 2020-06-12 | 合肥尚德新材料有限公司 | Method for preparing large-size high-density rare earth-containing ITO aluminum target material |
| CN111318570A (en) * | 2020-03-05 | 2020-06-23 | 爱发科电子材料（苏州）有限公司 | Process for manufacturing micronized target material crystal grains |
| CN111719059A (en) * | 2020-06-11 | 2020-09-29 | 新疆众和股份有限公司 | Preparation method of fine-grain high-purity aluminum-silicon-copper alloy target blank for sputtering |
| CN112538598A (en) * | 2020-12-02 | 2021-03-23 | 爱发科电子材料（苏州）有限公司 | Manufacturing method of aluminum-silicon target material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06158307A (en) * | 1992-11-30 | 1994-06-07 | Sumitomo Chem Co Ltd | Aluminium target and its production |
-
2018
- 2018-12-04 CN CN201811470627.8A patent/CN109338313A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06158307A (en) * | 1992-11-30 | 1994-06-07 | Sumitomo Chem Co Ltd | Aluminium target and its production |
Non-Patent Citations (1)
| Title |
|---|
| 吴丽君: "铝合金功能薄膜与溅射靶材", 《真空科学与技术》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110468312A (en) * | 2019-09-26 | 2019-11-19 | 常州斯威克新材料科技有限公司 | A kind of photovoltaic reflective membrane anticorrosion aluminium target and preparation method thereof and aluminum alloy films |
| CN110592406A (en) * | 2019-10-10 | 2019-12-20 | 新疆众和股份有限公司 | Preparation method of high-purity aluminum-copper alloy target blank for sputtering |
| CN111266586A (en) * | 2020-03-02 | 2020-06-12 | 合肥尚德新材料有限公司 | Method for preparing large-size high-density rare earth-containing ITO aluminum target material |
| CN111318570A (en) * | 2020-03-05 | 2020-06-23 | 爱发科电子材料（苏州）有限公司 | Process for manufacturing micronized target material crystal grains |
| CN111719059A (en) * | 2020-06-11 | 2020-09-29 | 新疆众和股份有限公司 | Preparation method of fine-grain high-purity aluminum-silicon-copper alloy target blank for sputtering |
| CN111719059B (en) * | 2020-06-11 | 2021-12-28 | 新疆众和股份有限公司 | Preparation method of fine-grain high-purity aluminum-silicon-copper alloy target blank for sputtering |
| CN112538598A (en) * | 2020-12-02 | 2021-03-23 | 爱发科电子材料（苏州）有限公司 | Manufacturing method of aluminum-silicon target material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109338313A (en) | A kind of aluminium alloy target and preparation method thereof | |
| US20140369883A1 (en) | Copper alloy and method of producing same | |
| US11655524B2 (en) | Copper alloy with excellent comprehensive performance and application thereof | |
| CN100392505C (en) | Copper alloy thin films, copper alloy sputtering targets and flat panel displays | |
| KR101570556B1 (en) | Method for Producing Copper Alloy Material for Electrical/Electronic Component | |
| KR101376502B1 (en) | Sputtering target | |
| US7727345B2 (en) | Copper alloy and method of manufacturing the same | |
| US11732329B2 (en) | Copper alloy, copper alloy plastic-processed material, component for electronic and electric devices, terminal, bus bar, and heat-diffusing substrate | |
| TWI432589B (en) | Aluminum alloy film for display device | |
| JP2008248333A (en) | Cu-Ni-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND MANUFACTURING METHOD THEREFOR | |
| WO2016171055A1 (en) | Copper alloy material and method for producing same | |
| JPWO2011036804A1 (en) | Cu-Ni-Si-Co-based copper alloy for electronic materials and method for producing the same | |
| US20080253925A1 (en) | Target material for electrode film, methods of manufacturing the target material and electrode film | |
| JP2004204284A (en) | Sputtering target, al alloy film, and electronic component | |
| JP2015161009A (en) | High strength copper alloy thin sheet material and production method thereof | |
| JPH0641660A (en) | Cu alloy steel having fine structure for electric and electronic parts | |
| KR20080110657A (en) | Ternary aluminum alloy films and targets | |
| JPH11293454A (en) | Target material for aluminum series sputtering and its production | |
| JP6274026B2 (en) | Copper alloy sputtering target and method for producing copper alloy sputtering target | |
| JP2007226058A (en) | Liquid crystal display panel, its manufacturing method, and cu alloy sputtering target | |
| CN107012345A (en) | A kind of preparation method of Al-Si-Cu alloy | |
| JP3276446B2 (en) | Al alloy thin film, method for producing the same, and sputtering target for forming an aluminum alloy thin film | |
| JP4750601B2 (en) | Copper alloy excellent in hot workability and manufacturing method thereof | |
| JP2006179881A (en) | Wiring, electrode, and sputtering target | |
| JP3306585B2 (en) | Cu alloy rolled sheet with fine crystals and precipitates and low distribution ratio |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190215 |