CN109326498A - A kind of temperature control system for semiconductor etching device - Google Patents
A kind of temperature control system for semiconductor etching device Download PDFInfo
- Publication number
- CN109326498A CN109326498A CN201811022270.7A CN201811022270A CN109326498A CN 109326498 A CN109326498 A CN 109326498A CN 201811022270 A CN201811022270 A CN 201811022270A CN 109326498 A CN109326498 A CN 109326498A
- Authority
- CN
- China
- Prior art keywords
- cooling pipe
- temperature control
- temperature
- control system
- reaction cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of temperature control system for semiconductor etching device, the temperature control system includes: cooling device, including cooling pipe, cooling source, power part, heater and storage room;Heat control unit, receives the state of temperature of the coolant in the cooling pipe and the heating for controlling the coolant makes the coolant reach preset temperature;Wherein, the cooling pipe is set to the reaction cavity member outer surface, the storage room is connected at least two cooling pipes, the heater temperature to control the coolant in the cooling pipe corresponding with the cooling pipe, the different cooling pipes match the different zones of the reaction cavity component periphery.The present invention is connected to by the way that a storage room is arranged with multiple cooling pipes, subregion temperature control is carried out to reaction cavity component again after different cooling pipes is carried out temperature control respectively, to improve the stability of semiconductor etching device etching.
Description
Technical field
The present invention relates to ic manufacturing technology fields, and in particular to a kind of temperature control for semiconductor etching device
System processed.
Background technique
In so-called semiconductor etching techniques, generated photoresist pattern is verily transferred under photoresist layer after developing
In material, the figure defined by photoetching technique is formed.It contain material whole face is uniformly removed and pattern selectively partially go
It removes, two kinds of technologies of wet etching (Wet etching) and dry etching (Dry etching) can be divided into.
Currently, dry etching is often referred in the way of glow discharge (Glow Discharge), generating includes ion, electronics
Equal charged particles and the plasma-based with the active neutral atom of elevated chemical, molecule and free radical, to carry out pattern transfer
The lithographic technique of (Pattern Transfer).Dry etching is the main method of etched features under submicron-scale, extensively
Front-end process applied to semiconductor or liquid crystal display (Liquid Crystal Display, abbreviation LCD).
In existing semiconductor etch equipment, because reaction cavity (chamber) is heated, lead to the peripheral portion of reaction cavity
Temperature steeply rises, and will necessarily result in the difference of reaction cavity internal temperature, reduces the stability of conductor etching;At this time
Need to make by a kind of temperature regulating device the ambient temperature of reaction cavity to stablize in a certain range, but existing temperature regulating device
Function restriction can not carry out subregion to reaction cavity and cool down and then ensure that the temperature of reaction cavity is stablized, increase temperature regulating device
Number will increase the space requirement of semiconductor equipment.Therefore, a kind of temperature control for semiconductor etching device is needed at present
System is to solve the above problems.
Summary of the invention
The present invention provides a kind of temperature control systems for semiconductor etching device, to solve semiconductor etching device
Middle reaction cavity temperature ambient temperature is unstable, leads to the problem that semiconductor etching stability is poor in reaction cavity.
According to an aspect of the invention, there is provided a kind of temperature control system in semiconductor etching device, institute
Stating semiconductor etching device includes reaction cavity component, and the temperature control system includes:
Cooling device, including cooling pipe, cooling source, power part, heater and storage room, inside the cooling source
Refrigerant carries out heat exchange with the coolant in the cooling pipe, drives the coolant to pass through institute with the power part
It states cooling pipe and the reaction cavity component carries out heat exchange;
Heat control unit receives the state of temperature of the coolant in the cooling pipe and controls the coolant
Heating so that the coolant is reached preset temperature;
Wherein, the cooling pipe is set to the reaction cavity member outer surface, the storage room and at least two institutes
It states cooling pipe to be connected, the heater is corresponding with the cooling pipe to control the coolant in the cooling pipe
Temperature, the different cooling pipes match the different zones of the reaction cavity component periphery.
According to one preferred embodiment of the present invention, the cooling pipe includes first area and second area, the heater
The first area is heated, the second area is set to reaction cavity component periphery to realize to the reaction cavity
The temperature control of component.
According to one preferred embodiment of the present invention, each cooling pipe includes first port, second port and third
Port, the first port are located at the cooling pipe liquid feeding end, and the second port is located at the first area and described the
The intersection in two regions, the third port are located at the outlet end of the cooling pipe.
According to one preferred embodiment of the present invention, temperature sense is provided at the second port and the third port
Know component.
According to one preferred embodiment of the present invention, the second port and the third port are provided with traffic aware portion
Part.
According to one preferred embodiment of the present invention, the heat control unit receives the second port and the third port
Temperature signal and flow signal, and the heating temperature for controlling the heater realizes temperature control to the coolant.
According to one preferred embodiment of the present invention, at least two cooling pipes are set to reaction cavity component bottom
Portion.
According to one preferred embodiment of the present invention, the outlet end of the cooling pipe is connect with refrigerant recovery part.
According to one preferred embodiment of the present invention, a cooling pipe corresponds at least one described heater.
According to one preferred embodiment of the present invention, the semiconductor etching device is semiconductor dry etching equipment.
It is an advantage of the invention that providing a kind of temperature control system for semiconductor etching device, pass through setting one
A storage room is connected to multiple cooling pipes, is carried out again to reaction cavity component after different cooling pipes is carried out temperature control respectively
Subregion temperature control, to improve the stability of semiconductor etching device etching.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram for the temperature control system that first embodiment of the invention provides;
Fig. 2 is the overlooking structure diagram for the cooling pipe that second embodiment of the invention provides.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention provides a kind of temperature control system for semiconductor etching device, in semiconductor etching device
Reaction cavity temperature ambient temperature is unstable, leads to the problem that semiconductor etching stability is poor in reaction cavity, the present embodiment
The defect can be improved.
The present invention is described further for connection with figures and specific embodiment below:
As shown in Figure 1, first embodiment according to the present invention, provides a kind of temperature in semiconductor etching device
Control system, the semiconductor etching device includes reaction cavity component 11, common, and the etching process of semiconductor is in reaction chamber
Body component 11 carries out, and is usually under vacuum state in the reaction cavity.
Further, reaction cavity component 11 includes the side of bottom, top and surrounding, in order to guarantee in reaction cavity
Portion's temperature it is controllable, cooling pipe usually is set outside the side of the bottom of reaction cavity 11, top and surrounding, passes through cooling
The heat exchange of coolant and 11 temperature of reaction cavity in pipeline 12, to have the function that control 11 internal temperature of reaction cavity;It can
It is the cooling pipe 12 that with understanding, in cooling pipe 12, coolant and reaction cavity component 11, which carry out the region of heat exchange,
With reaction cavity component 11 against region.
The temperature control system includes:
Cooling device, including cooling pipe 12, cooling source, power part, heater and storage room 13, in the cooling source
The refrigerant in portion carries out heat exchange with the coolant in the cooling pipe 12, drives the coolant with the power part
Heat exchange is carried out with the reaction cavity component 11 by the cooling pipe 12, to control the environment in reaction cavity component 11
Temperature;
Heat control unit receives the state of temperature of the coolant in the cooling pipe 12 and controls the cooling
The heating of agent makes the coolant reach preset temperature;
Wherein, the cooling pipe 12 is set to the outer surface of the cooling cavities 11, the storage room 13 and at least two
A cooling pipe is connected, and is connected at least two cooling pipes by the way that a storage room 13 is arranged and can not increase storage room 13
Under the premise of, the heater temperature to control the coolant in the cooling pipe 12 corresponding with the cooling pipe 12
Degree, the different zones of the corresponding reaction cavity member outer surface of the different cooling pipes 12, makes the cooling of different temperatures
The different zones of corresponding 11 outer surface of reaction cavity component of pipeline 12, can make to react by the adjusting of coolant temperature
The coolant temperature of the outer areas of higher temperature of capsule components 11 is arranged lower, makes the outer temperature lower region of reaction cavity component 11
Coolant temperature setting it is higher, with guarantee reaction cavity part temperatures stablize within a preset range, and then improve semiconductor
The efficiency of etching.
Preferably, the coolant both can be cooling gas, or coolant liquid.
Preferably, the cooling pipe 12 includes first area 12a and second area 12b, and the heater is to described the
The heating of one region, the second area 12b are close to the outside of the reaction cavity component 11 to realize to the reaction cavity portion
The temperature control of part 11, be in this way in order to avoid due to second area 12b heat, cause measurement data not to be consistent with test objective,
And then reduce accuracy of the invention.
Specifically, each cooling pipe includes first port, second port and third port, the first port
Positioned at 12 liquid feeding end of cooling pipe, the second port is located at the friendship of the first area 12a and the second area 12b
At boundary, the third port is located at the outlet end of the cooling pipe 12.
Preferably, it is provided with temperature sensing component at the second port and the third port, it is every to measure
A cooling pipe to reaction cavity component 11 carry out heat exchange when initial temperature information and pass to heat control unit.
Preferably, the second port and the third port are provided with traffic aware component, each cold for measuring
But flow of the pipeline when carrying out heat exchange to reaction cavity component 11, and then feed back to heat control unit.
Specifically, the traffic aware component is flowmeter.
Specifically, the temperature sensing component is thermometer.
Further, the heat control unit receives the temperature signal and stream of the second port and the third port
Signal is measured, and the heating temperature for controlling the heater realizes temperature control to the coolant, by by flow in cooling pipe
With the control of initial temperature so that 11 ambient temperature of reaction cavity inner part accurately reaches in target temperature range.
Not same district is used to react inside record reaction cavity it is understood that being provided in the reaction cavity component 11
The temperature conditions in domain, and real-time delivery is to temperature control unit, to be adjusted at any time according to the temperature conditions in reaction cavity component
Corresponding coolant temperature described in temperature anomaly region.
Further, closer apart from the reaction cavity feature bottom due to semiconductor, lead to bottom in reaction cavity
Portion's temperature is relatively high, therefore at least two cooling pipes 12 are set to 11 bottom of reaction cavity component.
Preferably, the outlet end of the cooling pipe 12 is connect with refrigerant recovery part, to realize the circulation of coolant
It uses again, refrigerant is transmitted to by refrigerant recovery part by storage room, save the cost and the energy again.
Preferably, at least one corresponding described heater of a cooling pipe 12.To in each cooling pipe 12
The temperature of coolant carries out differentiation control.
Preferably, the semiconductor etching device is semiconductor dry etching equipment.
Compared to the temperature control system of existing semiconductor etching device, the present invention by by single storage room with it is multiple
Cooling pipe is carried out temperature control respectively by heater, the cooling pipe 12 of different temperatures is placed on reaction by cooling pipe 12
The target temperature control region of cavity, and then guarantee the stability of reaction chamber body temperature, it is lower to avoid the rate of etch of semiconductor
Problem.
It is an advantage of the invention that it is an advantage of the invention that providing a kind of temperature control for semiconductor etching device
System is connected to multiple cooling pipes by one storage room of setting, is gone again after different cooling pipes is carried out temperature control respectively
Subregion temperature control is carried out to reaction cavity, to improve the stability of semiconductor etching device etching.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of temperature control system in semiconductor etching device, which is characterized in that the semiconductor etching device packet
Reaction cavity component is included, the temperature control system includes:
Cooling device, including cooling pipe, cooling source, power part, heater and storage room, the refrigerant inside the cooling source
Heat exchange is carried out with the coolant in the cooling pipe, drives the coolant to pass through with the power part described cold
But pipeline and the reaction cavity component carry out heat exchange;
Heat control unit receives the state of temperature of the coolant in the cooling pipe and controls adding for the coolant
Heat makes the coolant reach preset temperature;
Wherein, the cooling pipe is set to the reaction cavity member outer surface, the storage room and at least two described cold
But pipeline is connected, the heater temperature to control the coolant in the cooling pipe corresponding with the cooling pipe
Degree, the different cooling pipes match the different zones of the reaction cavity component periphery.
2. temperature control system according to claim 1, which is characterized in that the cooling pipe includes first area and
Two regions, the heater heat the first area, the second area be set to reaction cavity component periphery with
Realize the temperature control to the reaction cavity component.
3. temperature control system according to claim 2, which is characterized in that each cooling pipe includes first end
Mouth, second port and third port, the first port are located at the cooling pipe liquid feeding end, and the second port is located at institute
The intersection of first area Yu the second area is stated, the third port is located at the outlet end of the cooling pipe.
4. temperature control system according to claim 3, which is characterized in that the second port and the third end
Temperature sensing component is provided at mouthful.
5. temperature control system according to claim 4, which is characterized in that the second port and the third port are equal
It is provided with traffic aware component.
6. temperature control system according to claim 5, which is characterized in that the heat control unit receives described second
The temperature signal and flow signal of port and the third port, and the heating temperature for controlling the heater is realized to described cold
But the temperature control of agent.
7. temperature control system according to claim 1, which is characterized in that at least two cooling pipes are set to institute
State reaction cavity feature bottom.
8. temperature control system according to claim 1, which is characterized in that the outlet end and refrigerant of the cooling pipe
Recovery part connection.
9. temperature control system according to claim 1, which is characterized in that a cooling pipe corresponds at least one
The heater.
10. temperature control system according to claim 1, which is characterized in that the semiconductor etching device is semiconductor
Dry etching equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811022270.7A CN109326498A (en) | 2018-09-04 | 2018-09-04 | A kind of temperature control system for semiconductor etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811022270.7A CN109326498A (en) | 2018-09-04 | 2018-09-04 | A kind of temperature control system for semiconductor etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109326498A true CN109326498A (en) | 2019-02-12 |
Family
ID=65264296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811022270.7A Pending CN109326498A (en) | 2018-09-04 | 2018-09-04 | A kind of temperature control system for semiconductor etching device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109326498A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113776340A (en) * | 2020-06-09 | 2021-12-10 | 韩国光洋热电系统有限公司 | Chamber cooling unit of heat treatment furnace |
-
2018
- 2018-09-04 CN CN201811022270.7A patent/CN109326498A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113776340A (en) * | 2020-06-09 | 2021-12-10 | 韩国光洋热电系统有限公司 | Chamber cooling unit of heat treatment furnace |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4153781B2 (en) | Heat treatment apparatus and substrate processing apparatus | |
JP2006216822A (en) | Wafer processor and wafer processing method | |
EP0451740A2 (en) | Temperature control system for semiconductor wafer or substrate | |
CN107210250A (en) | Hot chuck for plasma process system | |
US20110220288A1 (en) | Temperature control system, temperature control method, plasma processing apparatus and computer storage medium | |
TWI470716B (en) | Process condition measuring device (pcmd) and method for measuring process conditions in a workpiece processing tool configured to process production workpieces | |
CN106663648A (en) | Substrate carrier using a proportional thermal fluid delivery system | |
CN105374657B (en) | Plasma processing apparatus and its temprature control method | |
JP2001077040A (en) | Device and method for manufacturing semiconductor device | |
CN109326498A (en) | A kind of temperature control system for semiconductor etching device | |
CN106861779A (en) | A kind of segmented micro-fluidic chip temperature regulating device | |
CN207221947U (en) | A kind of segmented micro-fluidic chip temperature regulating device | |
JP4909887B2 (en) | High pressure capillary microfluidic valve device and manufacturing method thereof | |
CN104099613A (en) | Reaction cavity and plasma processing equipment | |
JP4829833B2 (en) | Temperature estimation method and temperature estimation device | |
US6666949B1 (en) | Uniform temperature workpiece holder | |
CN103811393B (en) | Electrostatic chuck and plasma processing device for bearing wafer | |
JP2010087474A (en) | Method and apparatus for deciding temperature of substrate | |
JP3931357B2 (en) | Manufacturing method of semiconductor device | |
JP2001257253A (en) | Wafer processing device and method of manufacturing wafer | |
JP3485538B2 (en) | Plasma processing equipment | |
JPH03165486A (en) | Temperature regulating device for treatment | |
JPS61238985A (en) | Parallel flat plate type plasma etching device | |
KR0165463B1 (en) | Measuring method of wafer temperature | |
JP2005026422A (en) | Device and method for heat treatment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190212 |