CN105374657B - Plasma processing apparatus and its temprature control method - Google Patents
Plasma processing apparatus and its temprature control method Download PDFInfo
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- CN105374657B CN105374657B CN201410344292.0A CN201410344292A CN105374657B CN 105374657 B CN105374657 B CN 105374657B CN 201410344292 A CN201410344292 A CN 201410344292A CN 105374657 B CN105374657 B CN 105374657B
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Abstract
The invention discloses a kind of plasma processing apparatus, it includes reaction cavity and cooler.Reaction cavity includes being used to clamp pending substrate and is provided with the electrostatic chuck of cooling channel, and cooling channel has entrance point and the port of export.The output end and input of cooler are connected by transfer line with the entrance point and the port of export of cooling channel respectively, to supply cooling agent to cooling channel circulation.First temperature sensor is located at the entrance point of cooling channel, and second temperature sensor is located at the port of export of cooling channel.Cooler includes temperature control unit and execution unit, and the power that temperature control unit adjusts execution unit according to the difference of the coolant temperature of the difference and the port of export of entrance point and the coolant temperature of the port of export and the target temperature of electrostatic chuck makes the coolant temperature of the cooling channel port of export reach target temperature.Present invention also offers a kind of corresponding temprature control method.The present invention can improve the accuracy and promptness of substrate temperature control.
Description
Technical field
The present invention relates to semiconductor processing equipment, more particularly to a kind of plasma processing apparatus and applied to plasma
The temprature control method of processing unit.
Background technology
With the development of semiconductor fabrication process, integrated level and performance requirement more and more higher to element, plasma skill
Art has obtained extremely wide application, and it in the reaction cavity of plasma processing apparatus by being passed through reacting gas and introducing
Electron stream, electronics is accelerated using rf electric field, and being collided with reacting gas makes reacting gas occur to ionize and plasma,
The plasma of generation can be used for various semiconductor fabrication process, such as depositing operation (such as chemical vapor deposition), etching work
Skill (such as dry etching).
In the technique of above-mentioned application plasma technique, many technological effects are affected by temperature, therefore temperature control is
Very important link in semiconductor fabrication process.Especially, alternate repetition is needed when carrying out silicon hole (TSV) etching technics
- deposition step is performed etching, and the temperature requirement of deposition and etching process has significant difference, therefore with greater need for accurate temperature
Control system is spent to realize this rigors.Fig. 1 and Fig. 2 show the inductance coupling plasma processing device of prior art
Structural representation and temperature control schematic diagram.As shown in figure 1, inductance coupling plasma processing device generally includes reaction chamber
Bottom in body 1, reaction cavity 1 sets electrostatic chuck 5, and pending substrate W is placed on electrostatic chuck 5.Reaction cavity 1 is pushed up
Inductance-coupled coil 2 is configured with above the outside of plate, radio frequency source 4 is connected by adaptation (not shown) with the coil 2, radio frequency
The radio-frequency current that source 4 is provided flows into coil 2, and produces magnetic field around the coil 2, and then generates electricity in reaction cavity 1
, process gas being injected into by gas source 3 in cavity is ionized with this and plasma is produced, to be carved to substrate
The processing such as erosion deposition.
In order to control the temperature of substrate to be processed, cooling channel generally is set in electrostatic chuck 5, using to cooling channel
Middle circulation supply cooling agent carries out heat exchange with the substrate to be processed on electrostatic chuck.As illustrated, plasma processing apparatus
Also include being arranged at the cooler 6 outside reaction cavity, be connected by two transfer lines with the cooling channel in electrostatic chuck.
Wherein, the arrival end 7a connections that the output end 6b of cooler 6 passes through wherein one transfer line and the cooling channel of electrostatic chuck
With supply coolant, cooling agent completes after heat exchange to pass through another transmission from the port of export 7b of cooling channel in electrostatic chuck
Pipeline returns to the input 6a of cooler and is recovered.Temperature is respectively arranged with the input 6a and output end 6b of cooler 6
Sensor 8a and 8b are spent, to sense input 6a and output end 6b coolant temperature respectively.Cooler 6 also includes temperature control
Module and performing module (not shown), the temperature that the temperature control modules are detected using temperature sensor 8b is control object, control
Performing module processed carries out the heating or cooling action of cooling agent, until temperature sensor 8b detection temperature reaches the electrostatic of setting
The target temperature of chuck.
However, because the length of the transfer line (such as metal pipe line) between connection cooler and electrostatic chuck is at least number
Rice, cooling agent easily generation temperature change, loss of such as heat during by transfer line, this has resulted in cooler side
Temperature sensor 8a detection temperature and the temperature that is detected of the actual temperature of entrance point of cooling channel, temperature sensor 8b
It can all be had differences between the actual temperature of the cooling channel port of export.The thermometric value of the temperature sensor of cooler side is also with regard to nothing
Method correctly reflects the actual temperature of electrostatic chuck side, if being used as temperature control object using the thermometric value, it will have a strong impact on processing quality.
In addition, carrying out temperature survey by the temperature sensor of cooler side, there is also the delay of certain time so that cooler can not
The change of quick response substrate temperature, also reduce further promptness and the degree of accuracy of substrate temperature control.
Therefore, how quickly and accurately to carry out temperature control to substrate surface is that those skilled in the art are badly in need of at present
The technical problem of solution.
The content of the invention
It is a primary object of the present invention to overcome the defect of prior art there is provided a kind of accurate control substrate temperature and to base
The plasma processing apparatus that piece temperature change is timely responded to.
To reach above-mentioned purpose, the present invention provides a kind of plasma processing apparatus, and it includes reaction cavity, and it includes using
Cooling channel is provided with the electrostatic chuck for clamping pending substrate, the electrostatic chuck, the cooling channel has entrance point
And the port of export；Cooler, its output end and input pass through the entrance point and outlet of transfer line and the cooling channel respectively
End is connected, to provide cooling agent to the cooling channel and reclaim the cooling through heat exchange from the cooling channel
Agent；First temperature sensor, is adjacent to the entrance point of the cooling channel, the coolant temperature for measuring the entrance point；
Second temperature sensor, is adjacent to the port of export of the cooling channel, the coolant temperature for measuring the port of export.Its
In, the cooler includes temperature control unit and execution unit.The execution unit is used to adjust described cold through heat exchange
But the temperature of agent；The temperature control unit is connected with first temperature sensor and second temperature sensor, and it is according to institute
State the difference of the coolant temperature of entrance point and the port of export and the coolant temperature of the port of export and the electrostatic chuck
The difference of the target temperature of disk adjusts the power of the execution unit so that the coolant temperature of the port of export reaches the mesh
Mark temperature.
It is preferred that, the execution unit includes being used to heat the heater module of the cooling agent and described cold for cooling down
But the compressor module of agent, when the coolant temperature of the port of export is less than the target temperature, described control unit forbidden energy
The compressor module simultaneously adjusts the heating power of the heater module to heat the cooling agent；It is cold when the port of export
But when agent temperature is higher than the target temperature, heater module described in described control unit forbidden energy simultaneously adjusts the compressor module
Cooling power to cool down the cooling agent.
It is preferred that, the cooler also includes alarm unit, when the entrance point and the coolant temperature of the port of export
Difference be more than first threshold but less than Second Threshold when, the temperature control unit sends the first trigger signal, the alarm
Unit sends cue according to first trigger signal；When the difference of the entrance point and the coolant temperature of the port of export
During more than or equal to the Second Threshold, the temperature control unit sends the second trigger signal, the alarm unit according to this
Two trigger signals send alarm signal.
It is preferred that, the cooling channel is around be at least one to enclose and its port of export is arranged at the center of the electrostatic chuck
Domain.
It is preferred that, first temperature sensor is the first thermocouple that thermometric terminal is immersed in the cooling agent；Institute
State the second thermocouple that second temperature sensor is immersed in for thermometric terminal in the cooling agent.
Present invention also offers a kind of temprature control method applied to above-mentioned plasma processing apparatus, it includes following
Step：
S1：Pass through the coolant temperature of entrance point described in first temperature sensor measurement；
S2：The coolant temperature of the port of export is measured by the second temperature sensor；
S3：By the temperature control unit according to the difference of the entrance point and the coolant temperature of the port of export and
The difference of the target temperature of the coolant temperature of the port of export and the electrostatic chuck adjust the power of the execution unit with
The coolant temperature of the port of export is set to reach the target temperature.
It is preferred that, the execution unit includes being used to heat the heater module of the cooling agent and described cold for cooling down
But the compressor module of agent, step S3 further comprises：When the coolant temperature of the port of export is less than the target temperature,
As described in the temperature control unit forbidden energy compressor module and the heating power of the heater module is controlled with described in heating
Cooling agent；When the coolant temperature of the port of export is higher than the target temperature, as described in the temperature control unit forbidden energy
Heater module simultaneously controls the cooling power of the compressor module to cool down the cooling agent.
It is preferred that, the temprature control method also includes the coolant temperature for judging the entrance point and the port of export
Difference, when the difference is more than first threshold but is less than Second Threshold, sends cue；When the difference is more than or equal to institute
Alarm signal is sent when stating Second Threshold.
It is preferred that, the cooling channel is around be at least one to enclose and its port of export is arranged at the center of the electrostatic chuck
Domain.
It is preferred that, first temperature sensor and second sensor are temperature thermocouple, by by first temperature
Sensor and the thermometric terminal of second temperature sensor are immersed in the cooling agent to measure the entrance point and the outlet
The coolant temperature at end.
Compared to prior art, plasma processing apparatus of the invention is by the way that two temperature sensors are adjacent to respectively
The entrance point and the port of export of cooling channel sentence the coolant temperature of measurement entrance point and the port of export in electrostatic chuck, and to export
The cooling agent thermometric value at end carries out coolant temperature regulation for the power of temperature control object control cooler, can be to pending base
The temperature change of piece, which is made, to be timely responded to, while it also avoid the error for the temperature survey that cooling agent transmitting procedure is caused, enters one
Step improves the accuracy of substrate temperature control.
Brief description of the drawings
Fig. 1 is the structural representation of plasma processing apparatus in the prior art；
Fig. 2 is the temperature controlled schematic diagram of plasma processing apparatus in the prior art；
Fig. 3 is the structural representation of the plasma processing apparatus of one embodiment of the invention；
Fig. 4 is the top view of the cooling channel of one embodiment of the invention.
Fig. 5 is the temperature controlled schematic diagram of the plasma processing apparatus of one embodiment of the invention；
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
In the description of the invention, it is necessary to explanation, unless otherwise prescribed and limit, term " connected ", " connection " answer
It is interpreted broadly, can is direct for example, it may be mechanically connecting or electrical connection or the connection of two element internals
It is connected, can also be indirectly connected to by intermediary, for the ordinary skill in the art, can be as the case may be
Understand the concrete meaning of above-mentioned term.
In the description of the invention, it is necessary to explanation, the term " orientation of the instruction such as " center ", " edge ", " on ", " under "
Or position relationship is, based on orientation shown in the drawings or position relationship, to be for only for ease of the description present invention and simplify description, and
It is not instruction or implies that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore
It is not considered as limiting the invention.In addition, term " first ", " second " are only used for describing purpose, and it is not intended that referring to
Show or imply relative importance.Term " gas ions processing unit " can sink for plasma etching, plasma physical vapor
The devices such as product, plasma chemical vapor deposition, plasma surface cleaning.
Fig. 3 is referred to, it show the structural representation of the present embodiment inductance coupling plasma processing device, at other
Can also be using capacitance coupling type or other kinds of plasma processing apparatus, plasma processing apparatus in embodiment, this
Invention is not any limitation as.Inductance coupling plasma processing device includes reaction cavity 1, is arranged at outside reaction cavity 1
Cooler 6, temperature sensor 9a and 9b.Bottom wherein in reaction cavity 1 sets electrostatic chuck 5, and pending substrate W is placed
On electrostatic chuck 5, inductance-coupled coil 2 is configured with above the outside of the top plate of reaction cavity 1, radio frequency source 4 passes through adaptation (figure
In do not show) be connected with the coil 2, radio-frequency current that radio frequency source 4 is provided flows into coil 2, and produces magnetic field around the coil 2,
And then electric field is generated in reaction cavity 1, process gas being injected into by gas source 3 in cavity is ionized and produced with this
Raw plasma, to perform etching the processing such as deposition to substrate W.
Cooling channel 7 is provided with electrostatic chuck 5, cooler 6 is connected by two transfer lines with cooling channel 7, its to
Cooling channel 7 circulates the heat exchange for supplying cooling agent and realizing cooling agent and the substrate W to be processed on electrostatic chuck 5, so that right
Substrate W temperature is controlled.Temperature sensor 9a and 9b are adjacent to the entrance point 7a and port of export 7b of cooling channel, for dividing
Not Jian Ce cooling channel entrance point 7a and port of export 7b coolant temperature.Fig. 4 is refer to, it show bowing for cooling channel 7
View.In the present embodiment, it is at least one circle that cooling channel 7 is surround in the mode parallel with substrate, and its port of export 7b is arranged on
The central area of electrostatic chuck, entrance point 7a is arranged on the fringe region of electrostatic chuck, and the temperature of such port of export 7b measurements is more
Substrate temperature can be reflected.The cross sectional shape of cooling channel can be rectangle, circular or other polygons.The circling ring of cooling channel
Number and cross sectional shape area can coordinate the parameters such as the flow and heat-transfer capability of cooling agent to select.Temperature sensor 9a and 9b compared with
Good is temperature thermocouple, and its thermometric terminal is totally submerged in cooling agent.In the present embodiment, the entrance end of cooling channel and
Connected between transfer line by a bit of connecting tube (such as rubber hose), and thermocouple 9a and 9b thermometric terminal are then distinguished
It is inserted perpendicularly into the rubber hose, is immersed in cooling agent.
Please continue to refer to Fig. 5, cooler 6 includes input 6a, output end 6b, temperature control unit 61 and and temperature control
The connected execution unit 62 of unit.Output end 6b by the entrance point 7a connections of wherein one transfer line and cooling channel for
Answer cooling agent, cooling agent completed in electrostatic chuck 5 with pass through after the heat exchange of substrate from the port of export 7b of cooling channel it is another
Bar transfer line returns to input 6a and is recovered.It is adjacent to the first temperature at the entrance point 7a of cooling channel 7 and port of export 7b
Degree sensor 9a and second temperature sensor 9b senses entrance point 7a and port of export 7b coolant temperature and by sensing respectively
Temperature signal is sent to cooler by signal transmssion line 10.Cooler 6 is exported with the temperature sensor 9b cooling channels detected
End 7b coolant temperatures are that control object carries out temperature control to the cooling agent supplied to electrostatic chuck.Specifically, temperature control
Unit 61 processed is connected by signal wire 10 with the first temperature sensor 9a and second temperature sensor 9b, and it is according to temperature sensor
The target temperature of the difference of the temperature of 9a and 9b detections and the temperature of temperature sensor 9b detections and the electrostatic chuck of setting
Difference sends control signal to execution unit 62 to adjust the power of execution unit 62, and execution unit 62 is cooled down with the power
Heating or the cooling action of agent finally make temperature sensor 9b so as to adjust the coolant temperature through heat exchange of cooler recovery
Detection temperature reach the target temperature of the electrostatic chuck.The target temperature of electrostatic chuck mentioned here needs for electrostatic chuck
The temperature reached is heated or cooled.Wherein, the temperature gap meter that temperature control unit 61 is measured according to temperature sensor 9a and 9b
(high temperature and inductance-coupled coil 2 that such as plasma is produced are radiated the heat of electrostatic chuck to the heating source for calculating in reaction cavity
Amount) rate temperature change that is caused to electrostatic chuck (substrate W), the bigger explanation reaction cavity heating source of the temperature difference more puts on
On electrostatic chuck 5.Temperature control unit 61 is according to temperature sensor 9b detection temperature and the target temperature of electrostatic chuck afterwards
Deviation and the heating source cooling channel entrance point 7a that causes and port of export 7b rate temperature change regulation perform list
The power of member 62, so as to adjust cooler output end 6b coolant temperature, is caused due to considering heating source to electrostatic chuck 5
Temperature change influence so as to the cooling channel port of export 7b at coolant temperature control accuracy it is also higher.
Further, the execution unit 62 of cooler includes heater module and compressor module.Heater module is used for
Cooling agent is heated, and compressor module is used to cool down cooling agent.When temperature control unit 61 judges temperature sensor 9b detections
When coolant temperature is less than target temperature, the meeting forbidden energy compressor module of temperature control unit 61 makes heater module work concurrent
Go out the heating power that control signal adjusts heater module, heater module carries out heating action to the cooling agent of recovery.Work as temperature
Degree control unit 61 judges meeting forbidden energy heater module when the coolant temperature of sensor 9b detections is higher than target temperature, makes compression
The cooling power that machine module works and sends control signal regulation compressor module is finally reached with cooling to the cooling agent of recovery
Port of export 7b coolant temperature is set to reach the purpose of target temperature.
In a preferred embodiment, an alarm unit (not shown) is also included in cooler 6, in cooling channel
Entrance point temperature and larger discharge-end temperature deviation when send prompt message or warning message.Specifically, temperature control list
Member 61 receives the temperature value of temperature sensor 9a and 9b detection, generally in the case where coolant flow is stable (such as 7-10lpm),
Both maximum temperature differences are 5 DEG C or so.If temperature control unit 62 judges that the temperature difference that is measured at cooling channel two ends is more than the
Such as 5 DEG C of one threshold value but less than such as 10 DEG C of Second Threshold, then can send the first trigger signal to alarm unit, alarm unit is according to this
First trigger signal sends cue, reminds the temperature difference at Operation and Maintenance personnel's cooling channel two ends to exceed zone of reasonableness,
Operation and Maintenance personnel are allowed to know the abnormal state in order to check cooler and electrostatic chuck in being safeguarded in next time.If cooling is logical
The road two ends temperature difference is more than or equal to 10 DEG C, then temperature control unit 61 sends the second trigger signal to alarm unit, alarm unit root
According to the second trigger signal alert, Operation and Maintenance People pipeline is pointed out to occur leakage or cooler or temperature
Sensor may break down, it is necessary to which arresting stop running carries out fault detect.
Next the temprature control method based on above-mentioned plasma processing apparatus will be described further.The temperature control
Method processed comprises the following steps：
Step S1, the entrance point 7a of cooling channel coolant temperature is measured by the first temperature sensor 9a.
Step S2, the port of export 7b of cooling channel coolant temperature is measured by second temperature sensor 9b.
In above-mentioned steps, the first temperature sensor 9a and second sensor 9b can be temperature thermocouples, by by thermometric
Thermocouple 9a and 9b be adjacent to entrance point 7a and port of export 7b respectively and its thermometric terminal is immersed in cooling agent with measure into
Mouth end 7a and port of export 7b coolant temperature.In the present embodiment, thermometric terminal be insertion connection cooling channel import and export and
In rubber hose between transfer line.
Step S3, by temperature control unit 61 according to the cold of cooling channel entrance point 7a coolant temperature and port of export 7b
But the difference of the target temperature of the difference of agent temperature and the port of export 7b coolant temperature and electrostatic chuck adjusts execution unit
Power so that cooling channel port of export 7b coolant temperature reaches target temperature.
In this step, cooler is the temperature control unit root using port of export 7b coolant temperature as temperature control object
Heating source in reaction cavity is calculated to electrostatic chuck (substrate according to cooling channel entrance point 7a and the port of export 7b temperature gap
W the rate of temperature change) caused, further according to temperature sensor 9b detection temperature and the deviation of target temperature and the heating source
The cooling channel entrance point 7a and port of export 7b rate temperature change that cause calculate the power of execution unit, execution unit with
Power adjusting cooler output end 6b coolant temperature, it is final so that the cooling agent temperature of the port of export 7b as temperature control object
Degree reaches target temperature.
Wherein, execution unit may include heater module and compressor module.When temperature control unit 61 judges the port of export
When 7b coolant temperature is less than target temperature, can forbidden energy compressor module, heater module is worked and send control signal
The heating power of heater module is adjusted, heater module carries out heating action with the heating power to the cooling agent of recovery.When
When temperature control unit 61 judges that port of export 7b coolant temperature is higher than target temperature, forbidden energy heater module makes compressor
Module works and sends the cooling power that control signal adjusts compressor module, and compressor module is with the cooling power to recovery
Cooling agent cools.It is finally reached the coolant temperature for the port of export 7b for the detecting temperature sensor 9b mesh consistent with target temperature
's.
Further, temperature control unit 61 can also judge after temperature sensor 9a and 9b measured temperature is received
Whether the entrance point 7a and port of export 7b of cooling channel temperature gap are in zone of reasonableness.If cooling channel two ends are measured
The temperature difference is more than first threshold but is less than Second Threshold, then temperature control unit 61 sends the first trigger signal to alarm unit, report
Alert unit can send cue according to first trigger signal, remind the temperature difference at Operation and Maintenance personnel's cooling channel two ends
Beyond zone of reasonableness, Operation and Maintenance personnel are allowed to know the abnormal shape in order to check cooler and electrostatic chuck in being safeguarded in next time
State.If the cooling channel two ends temperature difference is more than or equal to Second Threshold, temperature control unit 61 sends the second trigger signal to alarm
Unit, alarm unit alert accordingly, point out Operation and Maintenance People pipeline may occur leakage or cooler or
Temperature sensor may break down, it is necessary to which arresting stop running carries out fault detect.
In summary, plasma processing apparatus of the invention by being adjacent to electrostatic chuck respectively by two temperature sensors
The entrance point and the port of export of the cooling channel of disk sentence measurement entrance point and port of export coolant temperature, and with the cooling of the port of export
Agent thermometric value is temperature control object, according to the port of export and entrance point thermometric difference and port of export thermometric value and the target of electrostatic chuck
The difference of temperature come control cooler power carry out coolant temperature regulation, until the port of export cooling agent thermometric value and mesh
Mark temperature consistent, the temperature change of pending substrate can so be made and timely responded to, while it also avoid cooling agent transmission
The error for the temperature survey that process is caused, further increases the accuracy of substrate temperature control.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (10)
1. a kind of plasma processing apparatus, it is characterised in that including：
Reaction cavity, it includes being provided with cooling channel, institute in the electrostatic chuck for being used to clamp pending substrate, the electrostatic chuck
Stating cooling channel has entrance point and the port of export；
Cooler, its output end and input pass through the entrance point and port of export phase of transfer line and the cooling channel respectively
Even, to provide cooling agent to the cooling channel and reclaim the cooling agent through heat exchange from the cooling channel；
First temperature sensor, is adjacent to the entrance point of the cooling channel, the coolant temperature for measuring the entrance point；
Second temperature sensor, is adjacent to the port of export of the cooling channel, the coolant temperature for measuring the port of export；
Wherein, the cooler includes temperature control unit and execution unit；The execution unit is used to adjust through heat exchange
The temperature of the cooling agent；The temperature control unit is connected with first temperature sensor and second temperature sensor, its
Go out what heating source in the reaction cavity was caused according to the mathematic interpolation of the entrance point and the coolant temperature of the port of export
The rate temperature change of the entrance point and the port of export, the coolant temperature further according to the port of export and the electrostatic chuck
The difference of the target temperature of disk and the rate temperature change adjust the power of the execution unit so that the port of export it is cold
But agent temperature reaches the target temperature.
2. plasma processing apparatus according to claim 1, it is characterised in that the execution unit includes being used to heat
The heater module of the cooling agent and the compressor module for cooling down the cooling agent, when the cooling agent temperature of the port of export
When degree is less than the target temperature, compressor module described in described control unit forbidden energy and the heating for adjusting the heater module
Power is to heat the cooling agent；When the coolant temperature of the port of export is higher than the target temperature, described control unit
Heater module described in forbidden energy simultaneously adjusts the cooling power of the compressor module to cool down the cooling agent.
3. plasma processing apparatus according to claim 1, it is characterised in that it is single that the cooler also includes alarm
Member, when the difference of the entrance point and the coolant temperature of the port of export is more than first threshold but is less than Second Threshold, institute
State temperature control unit and send the first trigger signal, the alarm unit sends cue according to first trigger signal；When
When the difference of the coolant temperature of the entrance point and the port of export is more than or equal to the Second Threshold, the temperature control list
Member sends the second trigger signal, and the alarm unit sends alarm signal according to second trigger signal.
4. plasma processing apparatus according to claim 1, it is characterised in that it is at least one that the cooling channel, which is surround,
Circle and its port of export is arranged at the central area of the electrostatic chuck.
5. plasma processing apparatus according to claim 1, it is characterised in that first temperature sensor is thermometric
Terminal is immersed in the first thermocouple in the cooling agent；The second temperature sensor is that thermometric terminal is immersed in the cooling
The second thermocouple in agent.
6. a kind of temprature control method applied to plasma processing apparatus as claimed in claim 1, it is characterised in that bag
Include following steps：
S1：Pass through the coolant temperature of entrance point described in first temperature sensor measurement；
S2：The coolant temperature of the port of export is measured by the second temperature sensor；
S3：Institute is gone out according to the mathematic interpolation of the entrance point and the coolant temperature of the port of export by the temperature control unit
State the rate temperature change of the entrance point that heating source in reaction cavity causes and the port of export, further according to the port of export
Coolant temperature and the electrostatic chuck target temperature difference and the rate temperature change adjust the execution unit
Power so that the coolant temperature of the port of export reaches the target temperature.
7. temprature control method according to claim 6, it is characterised in that the execution unit includes described for heating
The heater module of cooling agent and the compressor module for cooling down the cooling agent, step S3 further comprise：
When the coolant temperature of the port of export is less than the target temperature, compressed as described in the temperature control unit forbidden energy
Machine module simultaneously controls the heating power of the heater module to heat the cooling agent；When the coolant temperature of the port of export
During higher than the target temperature, heater module and the compressor module is controlled as described in the temperature control unit forbidden energy
Cooling power is to cool down the cooling agent.
8. temprature control method according to claim 6, it is characterised in that also include：
Judge the difference of the coolant temperature of the entrance point and the port of export, it is cold when the entrance point and the port of export
But when the difference of agent temperature is more than first threshold but is less than Second Threshold, cue is sent；When the entrance point and it is described go out
The difference of the coolant temperature at mouth end sends alarm signal when being more than or equal to the Second Threshold.
9. temprature control method according to claim 6, it is characterised in that the cooling channel around be at least one enclose and
Its port of export is arranged at the central area of the electrostatic chuck.
10. temprature control method according to claim 6, it is characterised in that first temperature sensor and second is passed
Sensor is temperature thermocouple, described by the way that the thermometric terminal of first temperature sensor and second temperature sensor is immersed in
To measure the coolant temperature of the entrance point and the port of export in cooling agent.
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| CN201410344292.0A CN105374657B (en) | 2014-07-18 | 2014-07-18 | Plasma processing apparatus and its temprature control method |
| TW103143956A TWI570766B (en) | 2014-07-18 | 2014-12-16 | Plasma processing device and temperature control method thereof |
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| CN201410344292.0A CN105374657B (en) | 2014-07-18 | 2014-07-18 | Plasma processing apparatus and its temprature control method |
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| CN105374657B true CN105374657B (en) | 2017-07-25 |
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| AT520814B1 (en) * | 2018-01-31 | 2019-08-15 | Avl List Gmbh | A method for controlling a temperature of a coolant of a coolant circuit of a drive unit on a test bench |
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| CN110986270B (en) * | 2019-12-16 | 2020-11-27 | 珠海格力电器股份有限公司 | Semiconductor air conditioner fault detection method and device and semiconductor air conditioner |
| CN113126667B (en) * | 2020-01-16 | 2022-04-05 | 夏泰鑫半导体(青岛)有限公司 | Semiconductor device and temperature control method thereof |
| CN112928872A (en) * | 2021-01-20 | 2021-06-08 | 广东韶钢松山股份有限公司 | Temperature monitoring method and system for water-cooled exciter |
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| CN100361288C (en) * | 2005-12-07 | 2008-01-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | System for fast controlling electrostatic chuck temperature |
| JP5185790B2 (en) * | 2008-11-27 | 2013-04-17 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| US9070536B2 (en) * | 2012-04-24 | 2015-06-30 | Applied Materials, Inc. | Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface |
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| TW201604916A (en) | 2016-02-01 |
| CN105374657A (en) | 2016-03-02 |
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