CN109309158A - Pattern organic film preparation method, the preparation method of array substrate - Google Patents
Pattern organic film preparation method, the preparation method of array substrate Download PDFInfo
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- CN109309158A CN109309158A CN201810870410.XA CN201810870410A CN109309158A CN 109309158 A CN109309158 A CN 109309158A CN 201810870410 A CN201810870410 A CN 201810870410A CN 109309158 A CN109309158 A CN 109309158A
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 54
- 238000000059 patterning Methods 0.000 claims abstract description 45
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 20
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 12
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 55
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
Abstract
The present invention provides a kind of patterning organic film preparation method, the preparation method of array substrate, belongs to field of display technology.In patterning organic film preparation method of the invention, patterning organic film includes at least one set of pattern, and every group of pattern includes multiple sub-patterns；Wherein, any one group of pattern is formed by following steps: substrate being vertically placed in organic solution, and stands preset time, so that the solute of organic solution deposits to form prefabricated figure at substrate and organic solution, air contact position；Substrate is lifted along the direction far from organic solution with pre-set velocity, so that the solute of organic solution deposits to form one group of pattern at substrate and organic solution, air contact position during lifting；In every group of pattern, multiple sub-patterns are arranged along the dip direction perpendicular to substrate.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of patterning organic film preparation method, array substrate
Preparation method.
Background technique
Currently, organic functional material be since its molecule can design, easily prepared, and it can be applied to the spies such as Grazing condition device
Point, so that it is in such as Active Matrix Display, logic circuit and the industrial neck of the extensive of sensor array class, high integration
Domain has broad application prospects.However, these are extensive, the array device of high integration usually requires outstanding device one
Cause property and reproducibility, this needs patterned organic functional thin film just to reduce the crosstalk of adjacent devices in array device.
The existing method for preparing patterned organic semiconductor thin-film has following several: first is that by carrying out to substrate
Then pretreatment passes through the methods of spin coating for organic semiconductor thin-film so that substrate surface has patterned close and distant water area
Precursor solution coating on the surface of the substrate, form patterned organic semiconductor thin-film after dry.This method has
The advantage that precision is high, prepared film thickness is uniform is patterned, but its processing step is more, processing time is long and is difficult to answer
Preparation for large area uniform film.Second is that realizing organic semiconductor using the self assembly of template-directed organic semi-conductor
The patterning of film.Due to the presence of template, capillary force can guide solution into template first, after the solvent evaporates, pressure
Print off pattern corresponding with shape of template.But device array manufactured by this method usually has biggish size that (100 is micro-
Meter or more) and relatively low resolution ratio, therefore, for the further perfect using also needing of large scale integrated circuit.Third is that
Array organic semiconductor thin-film is realized using the precursor solution of the direct spray printing organic semiconductor thin-film of inkjet printing technology
Preparation.This method can realize patterning, print on demand, maximum save the cost, but utilize pattern prepared by the technology
The caliper uniformity for changing film is poor, usually has poor device performance.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, provide a kind of preparation process it is simple,
The uniform patterning organic film preparation method of film thickness.
Solving technical solution used by present invention problem is a kind of patterning organic film preparation method, described
Patterning organic film includes at least one set of pattern, and every group of pattern includes multiple sub-patterns；Wherein, any one group of pattern passes through
Following steps are formed:
Substrate is vertically placed in organic solution, and stands preset time, so that the solute of the organic solution is in institute
It states and deposits to form prefabricated figure at substrate and the organic solution, air contact position；
The substrate is lifted along the direction far from the organic solution with pre-set velocity, so that during lifting, it is described
The solute of organic solution deposits to form one group of pattern at the substrate and the organic solution, air contact position；
In every group of pattern, multiple sub-patterns are arranged along the dip direction perpendicular to the substrate.
Preferably, the preset time is 100 to 200s.
Preferably, the rate of volatilization of the solvent of the organic solution is more than or equal to the rate of volatilization of n-butyl acetate.
It is preferably, described that substrate is vertically placed on before the step in organic solution further include:
The organic solution is heated, so that the rate of volatilization of the solvent of the organic solution is being more than or equal to acetic acid just
The rate of volatilization of butyl ester.
Preferably, the solute of the organic solution is TIPS pentacene；
The solvent of the organic solution includes methylene chloride.
It is further preferred that the concentration of the organic solution is 10mg/ml；
The forming step of any one group of pattern specifically includes:
Substrate is vertically placed in the organic solution and stands 120s, so that the TIPS pentacene is in the substrate
It deposits to form predetermined pattern at the organic solution, air contact position；
The substrate is lifted along the direction far from the organic solution with the speed of 5mm/min, so that in lifting process
In, the TIPS pentacene deposits to form one group of pattern at the substrate and the organic solution, air contact position.
Preferably, after lifting the substrate pre-determined distance along the direction far from the organic solution with pre-set velocity,
Accelerate to lift the substrate, so that pattern can not be formed on the substrate in the solute of the organic solution.
Preferably, the patterning organic film includes multiple groups pattern, wherein at least two groups pattern is different；
In the forming step of any two groups of different patterns, the preset time and/or pre-set velocity are different.
Preferably, the shape of the sub-pattern is bar shaped, and the extending direction of the bar shaped is parallel to the lifting of the substrate
Direction.
The preparation method that technical solution used by present invention problem is a kind of array substrate is solved, including above-mentioned
Any one patterning organic film preparation method.
Detailed description of the invention
Fig. 1 is the flow chart of the patterning organic film preparation method of the embodiment of the present invention；
Fig. 2 be the embodiment of the present invention patterning organic film preparation method in form the schematic diagram of prefabricated figure
Fig. 3 is the schematic diagram of formation pattern in the patterning organic film preparation method of the embodiment of the present invention；
Fig. 4 is the inclined of the patterning organic film that the patterning organic film preparation method of the embodiment of the present invention is formed
Light microscope figure；
Fig. 5 is the relational graph of pull rate and time in the patterning organic film preparation method of the embodiment of the present invention；
Fig. 6-8 is the signal of different time sections substrate in the patterning organic film preparation method of the embodiment of the present invention
Figure；
Fig. 9 is the pass of another pull rate and time in the patterning organic film preparation method of the embodiment of the present invention
System's figure；
Figure 10 is to be prepared in the patterning organic film preparation method of the embodiment of the present invention according to the technological parameter of Fig. 9
Substrate schematic diagram.
Wherein appended drawing reference are as follows: 1, substrate；2, organic solution；3, sub-pattern.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention with reference to the accompanying drawing and is embodied
Present invention is further described in detail for mode.
Embodiment 1:
As shown in Fig. 1 to 10, the present embodiment provides a kind of patterning organic film preparation methods.Utilize the preparation method
It include at least one set of pattern in prepared patterning organic film, every group of pattern includes multiple sub-patterns 3.Wherein, any one
Group pattern is formed by following steps:
S1, substrate 1 is vertically placed in organic solution 2, and stands preset time, so that the solute of organic solution 2 exists
It deposits to form prefabricated figure at substrate 1 and organic solution 2, air contact position.
In this step, the substrate 1 of organic film to be formed is immersed in organic solution 2 vertically, so that the substrate 1 is vertical
In 2 liquid level of organic solution (due to the presence of the natural phenomenas such as gravity, the liquid level of organic solution 2 is usually horizontal).Also,
Maintain above-mentioned vertical state with preset time, in the preset time, as shown in Fig. 2, organic solution 2 is in surface tension and again
It can rise near substrate 1,2 liquid level of organic solution and air three's contact line under power effect and form meniscus, meanwhile, with
The solvent of organic solution 2 evaporates, and the solute of organic solution 2 can deposit at the contact line, to form horizontal stripe on the base 1
The prefabricated figure of shape.
Wherein, it is preferred that the rate of volatilization of the solvent of organic solution 2 is more than or equal to the volatilization speed of n-butyl acetate
Rate.That is, the solvent rate of volatilization of organic solution 2 should be not less than the rate of volatilization of n-butyl acetate.In the prior art, usually with
N-butyl acetate rate of volatilization=1.0 are used as standard reference, rate of volatilization (the i.e. phase according to each solvent with respect to n-butyl acetate
To rate of volatilization) come indicate each solvent rate of volatilization speed.That is, the solvent of the organic solution 2 in the present embodiment
Relatively volatile rate should be greater than or be equal to 1.0, with guarantee prefabricated figure and pattern organic film formation.
It preferably, can be to having when the rate of volatilization of the solvent of organic solution 2 is less than the rate of volatilization of n-butyl acetate
Machine solution 2 is heated, so that the rate of volatilization of the solvent of organic solution 2 is more than or equal to the volatilization speed of n-butyl acetate
Rate.It certainly, can also be to organic when the rate of volatilization of the solvent of organic solution 2 is not less than the rate of volatilization of n-butyl acetate
Solution 2 is heated.
In the present embodiment, the solute of organic solution 2 can be soluble small organic molecule material to form organic film
Material, specifically, bis- (triisopropylsilyl acetenyl) pentacenes (TIPS pentacene) of such as 6,13-, solvent for use can be
Methylene chloride, 2 concentration of organic solution can be prepared according to actual needs, concretely 10mg/ml.
It, can be to being located in advance to substrate 1 in advance in order to guarantee the finally uniformity that forms a film on the base 1 in the present embodiment
Reason is removed the impurity on 1 surface of substrate by cleaning process, makes the face smooth surface to be filmed of substrate 1.
S2, substrate 1 is lifted along the direction far from organic solution 2 with pre-set velocity, so that during lifting, You Jirong
The solute of liquid 2 deposits to form one group of pattern at substrate 1 and organic solution 2, air contact position；Wherein, in every group of pattern,
Multiple sub-patterns 3 are along the dip direction arrangement perpendicular to substrate 1.
It is statically placed in the period (preset time) of organic solution 2 in substrate 1, substrate 1,2 liquid level of organic solution and air
There is the capillary force caused by solvent evaporates and concentration gradient effect at three's contact position.As shown in figure 3,
When substrate 1 is with pre-set velocity (direction far from organic solution 2) lifting upwards, capillary force and concentration gradient effect
So that the solute of organic solution 2 is continuously sent with the rising of substrate 1 to contact line, and deposits and be formed with
Machine film layer.Meanwhile substrate 1 will receive unstable factor in lifting, cause prefabricated figure to become wavy from horizontal stripe shape, i.e.,
Prefabricated figure has finger-like unstability, and with this condition, during substrate 1 continues lifting, the solute of organic solution 2 is right
It answers prefabricated figure crest location constantly to deposit, forms organic film pattern, and then will not at the prefabricated figure wave trough position of correspondence
Deposition, i.e., the organic film formed in substrate 1 be on the direction perpendicular to dip direction it is discontinuous, thus finally in base
Multiple edges are formed on bottom 1 to arrange perpendicular to 1 dip direction of substrate, and the extending direction strip parallel with 1 dip direction of substrate
The sub-pattern 3 of organic film.
Wherein, due to each sub-pattern 3 be as the lifting of substrate 1 is formed, shape be bar shaped, which prolongs
Stretch the dip direction for being oriented parallel to substrate 1.And size (length) of each sub-pattern 3 (bar shape) on dip direction with
Distance dependent is lifted, i.e. lifting distance determines size of the sub-pattern 3 on dip direction.
Size (width) w in orientation of each sub-pattern 3, thickness h0, spacing distance between adjacent sub-pattern 3
The parameters such as (3 spacing of sub-pattern) λ are then dense with the solvent rate of volatilization R of pull rate v (i.e. pre-set velocity) organic solution 2, solution
It is related to spend C, solution viscosity η and surface tension γ, solution temperature T etc..Specifically, the work of pattern width w and dip-coating method
Skill parameters relationship is as follows: w ∝ (C, T, R, v-1)；The technological parameter relationship of 3 spacing λ of sub-pattern and dip-coating method meets following
Formula:Thickness h0With the technological parameter relationship of dip-coating method are as follows: h0∝(C,T,R,v-1).Such as it can
It prepares to form the patterning organic film that 3 spacing of sub-pattern as shown in Figure 4 is 25 microns by adjusting technological parameter.
Patterning organic film preparation method provided in this embodiment can prepare the identical figure of multiple groups in same substrate 1
The organic film of case or different pattern.In order to clearly be illustrated to the present embodiment, below with organic solution 2
Solute is TIPS pentacene, and solvent is methylene chloride, and compound concentration can be 10mg/ml, sequentially forms three groups on the base 1 not
With being specifically described for the organic film of pattern.
The patterning organic film preparation method specifically includes the following steps:
S21, it substrate 1 is vertically placed in organic solution 2 with certain speed stands 120s, so that TIPS pentacene exists
It deposits to form predetermined pattern at substrate 1 and organic solution 2, air contact position.
As shown in figure 5, substrate 1 is immersed in organic solution 2 in the 0-t1 period with v0 speed, t1-t2 period substrate 1
It is impregnated in organic solution 2, S indicates that substrate 1 immerses the depth of organic solution 2.Wherein, v0 concretely 18mm/min.
S22, substrate 1 is lifted along the direction far from organic solution 2 with the speed of 5mm/min, so that during lifting,
TIPS pentacene deposits to form one group of pattern at substrate 1 and organic solution 2, air contact position.
As shown in figure 5, the t2-t3 period is lifted substrate 1 with v1 speed (v1=5mm/min) from organic solution 2
Out, pattern as shown in FIG. 6 is formed in substrate 1.
S23, accelerate lifting substrate 1, so that the solute of organic solution 2 can not form pattern in substrate 1.
As shown in figure 5, after substrate 1 is lifted out S1 distance by the t2-t3 period, in the t3-t4 period, with v1 speed
For initial velocity, make substrate 1 reach speed v4 one very big in a short time to the acceleration of 1 one moments of substrate, at this time by
Be significantly larger than the speed that organic solute forms pattern in the movement velocity of substrate 1, cause in the t3-t4 period organic solute without
Method forms a film on the base 1, to make the length S1 of sub-pattern 3 formed in substrate 1, the pattern formed in substrate 1 at this time is such as
Shown in Fig. 7.
Later, after accelerating to lift 1 certain distance S1 ' of substrate, stopping lifting substrate 1, and repetition step S21, S22,
S23.As shown in figure 5, t4-t5 is the dip time of a new round, and so on, it can be formed by repeating step twice such as Fig. 8
Shown in organic film.Wherein, wherein the sum of S=S1+S1 '+S2+S1 '+S3+S3 '.It is repeating in step every time, when presetting
Between (dip time), pre-set velocity (pull rate v1, v2, v3) can be carried out according to the pattern specification of required formation it is corresponding
Adjustment realizes that extensive, the patterning of high integration is organic to form the same or different organic film of sub-pattern 3
The preparation of film layer.
In the present embodiment, it is to be understood that when only preparing one group of pattern, and the length of the pattern may extend to substrate 1
When edge, can as shown in figure 9, at the uniform velocity lifted in lifting, until substrate 1 leaves organic solution 2 completely, without being accelerated,
Patterning organic film as shown in Figure 10 is formed on substrate, to be further simplified preparation process.
In patterning organic film preparation method provided in this embodiment, formed on the base 1 by Best-Effort request method
Organic film, the finger-like unstability of prefabricated figure, forms evenly distributed item on the base 1 during being lifted using substrate 1
The organic film of shape pattern.Wherein, by the different technical parameters in control preparation method, different sub-patterns 3 can be realized
The preparation of spacing, the organic semiconductor film layer of 3 width of different sub-patterns.Patterning organic film preparation provided in this embodiment
Method preparation process is simple and convenient, and process costs are lower, and the organic film prepared has consistent crystallization shape, film thickness
Uniformly, so as to make based on final array device have excellent device performance and consistency.Also, by repeatedly weighing
Multiple Best-Effort request step, changes technological parameter, a variety of different sub-patterns 3 can be formed in same layer organic film, to make
Standby extensive out, high integration patterning organic film.
Embodiment 2:
The present embodiment provides a kind of preparation method of array substrate, the patterning organic film system provided including embodiment 1
Preparation Method.
Array substrate includes thin film transistor (TFT) (Thin Film Transistor；TFT), grid line, data line, pixel list
Member etc..It, can be according to the patterning organic film system of the offer of embodiment 1 in the preparation method of array substrate provided in this embodiment
Preparation Method prepares the organic semiconductors film layers such as the active layer in array substrate.The structures such as grid line, data line can pass through existing skill
Prepared by the preparation method in art, this will not be detailed here.
The preparation method of array substrate provided in this embodiment, the patterning organic film provided due to using embodiment 1
Layer preparation method, therefore compared with the prior art, preparation process is simple and convenient, and process costs are lower, and the organic film tool prepared
There is consistent crystallization shape, so as to make array substrate that there is excellent device performance and consistency.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary reality that uses
Mode is applied, however the present invention is not limited thereto.For those skilled in the art, the present invention is not being departed from
Spirit and essence in the case where, various changes and modifications can be made therein, these variations and modifications are also considered as guarantor of the invention
Protect range.
Claims (10)
1. a kind of patterning organic film preparation method, which is characterized in that
The patterning organic film includes at least one set of pattern, and every group of pattern includes multiple sub-patterns；Wherein, any one group picture
Case is formed by following steps:
Substrate is vertically placed in organic solution, and stands preset time, so that the solute of the organic solution is in the base
It deposits to form prefabricated figure at bottom and the organic solution, air contact position；
The substrate is lifted along the direction far from the organic solution with pre-set velocity, so that during lifting, it is described organic
The solute of solution deposits to form one group of pattern at the substrate and the organic solution, air contact position；
In every group of pattern, multiple sub-patterns are arranged along the dip direction perpendicular to the substrate.
2. patterning organic film preparation method according to claim 1, which is characterized in that
The preset time is 100 to 200s.
3. patterning organic film preparation method according to claim 1, which is characterized in that
The rate of volatilization of the solvent of the organic solution is more than or equal to the rate of volatilization of n-butyl acetate.
4. patterning organic film preparation method according to claim 1, which is characterized in that
It is described that substrate is vertically placed on before the step in organic solution further include:
The organic solution is heated, so that the rate of volatilization of the solvent of the organic solution is more than or equal to n-butyl acetate
Rate of volatilization.
5. patterning organic film preparation method according to claim 1, which is characterized in that
The solute of the organic solution is TIPS pentacene；
The solvent of the organic solution includes methylene chloride.
6. patterning organic film preparation method according to claim 5, which is characterized in that
The concentration of the organic solution is 10mg/ml；
The forming step of any one group of pattern specifically includes:
Substrate is vertically placed in the organic solution and stands 120s so that the TIPS pentacene the substrate with it is described
It deposits to form predetermined pattern at organic solution, air contact position；
The substrate is lifted along the direction far from the organic solution with the speed of 5mm/min, so that during lifting, it is described
TIPS pentacene deposits to form one group of pattern at the substrate and the organic solution, air contact position.
7. patterning organic film preparation method according to claim 1, which is characterized in that
After lifting the substrate pre-determined distance along the direction far from the organic solution with pre-set velocity, accelerate described in lifting
Substrate, so that pattern can not be formed on the substrate in the solute of the organic solution.
8. patterning organic film preparation method according to claim 1, which is characterized in that
The patterning organic film includes multiple groups pattern, wherein at least two groups pattern is different；
In the forming step of any two groups of different patterns, the preset time and/or pre-set velocity are different.
9. patterning organic film preparation method according to claim 1, which is characterized in that
The shape of the sub-pattern is bar shaped, and the extending direction of the bar shaped is parallel to the dip direction of the substrate.
10. a kind of preparation method of array substrate, which is characterized in that
Including patterning organic film preparation method described in any one of claim 1 to 9.
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| JAEYOUNG JANG等: ""Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip-Coating"", 《ADVANCED FUNCTIONAL MATERIALS》 * |
| MENG ZHI QIN等: ""Dip-Coating of Patterned Organic Semiconductor Films"", 《APPLIED MECHANICS AND MATERIALS》 * |
| ZHIFANG WANG等: ""Fast growth of monolayer organic 2D crystals and their application in organic transistors"", 《ORGANIC ELECTRONICS》 * |
| ZHIMIN CHAI等: ""Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2‑b][1]benzothiophene (C8-BTBT) Films"", 《APPLIED MATERIALS&INTERFACES》 * |
| 塞婪芝: ""溶液法薄膜制备工艺中微观表面梯度的作用机制和应用研究"", 《万方：硕士学位论文》 * |
| 朱涛: ""有机超薄膜的提拉生长及应用"", 《万方:硕士论文》 * |
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