CN109309016B - Silicon chip protection method during groove corrosion - Google Patents
Silicon chip protection method during groove corrosion Download PDFInfo
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- CN109309016B CN109309016B CN201710615694.3A CN201710615694A CN109309016B CN 109309016 B CN109309016 B CN 109309016B CN 201710615694 A CN201710615694 A CN 201710615694A CN 109309016 B CN109309016 B CN 109309016B
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- acid
- silicon wafer
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- resistant wax
- baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
Abstract
A silicon chip protection method during trench etching is characterized in that: and printing acid-resistant wax on the surface of the silicon wafer, wherein the acid-resistant wax comprises 2-butoxyethanol, talcum powder and 2- (2-ethoxyethoxy) ethyl acetate. Compared with the prior art, the method has the advantages that the process of screen printing acid-resistant glue is adopted to replace the prior method of coating photoresist, the process flow is greatly shortened, the GPP production efficiency is improved, the consumption of chemical raw materials is reduced, and the cost is effectively reduced.
Description
Technical Field
The application belongs to the technical field of GPP production, and particularly relates to a silicon wafer protection method during groove corrosion.
Background
GPP is an abbreviation of glass passivation parts, which is a generic name of glass passivation devices. The product is that a layer of glass is fired around the P/N junction surface of a tube core to be divided on the basis of the existing ordinary silicon rectifying and diffusing sheet, the glass and monocrystalline silicon have good combination characteristics, so that the P/N junction is optimally protected from being invaded by the external environment, the stability of the device is improved, and the reliability is excellent. And therefore, the GPP is applied more and more widely in the electronic field. The corresponding GPP production process is receiving more and more attention in the industry, and how to produce GPP more efficiently, more quickly and with higher quality becomes a subject. The protection method before the trench corrosion commonly used at present adopts a photoetching process, and the process flow comprises prebaking, gluing double-sided adhesive tape, baking, photoetching, developing, hardening, removing an oxidation layer, baking, gumming and baking. The process flow is long, the GPP production efficiency is influenced, the use amount of chemical raw materials is large, and the cost is high.
Disclosure of Invention
In view of this, the present application provides a method for protecting a silicon wafer during trench etching and a silicon wafer, and a method of screen printing acid wax resistance is adopted, so that the flow of the original process is shortened, and the usage amount of chemical raw materials is reduced.
In order to solve the technical problems, the application discloses a silicon wafer protection method and a silicon wafer during trench etching, and the method and the silicon wafer are realized by adopting the following technical scheme.
A silicon chip protection method during groove corrosion is characterized in that acid-resistant wax is printed on the surface of a silicon chip to protect the silicon chip.
Further, the step of printing the acid-resistant wax sequentially comprises: pre-baking, printing acid-resistant wax on the N surface, baking, printing acid-resistant wax on the P surface, and baking; the N-side printing acid-resistant wax and the P-side printing acid-resistant wax can be interchanged in sequence.
Further, the acid-resistant wax component includes: 2-butoxyethanol, talc and 2- (2-ethoxyethoxy) ethyl acetate.
Further, the acid-resistant wax composition does not include asbestos fibers.
Further, the baking condition is that the silicon wafer is placed in an oven with the temperature of 90-180 ℃ for baking for 20-60 min.
Further, the step of printing the acid-resistant wax further comprises removing the acid-resistant wax when protection is not required subsequently.
Further, the removal of the acid-resistant wax is specifically performed by placing the silicon wafer printed with the acid-resistant wax in a solution for soaking.
Preferably, the solution is 2% -10% KOH solution, and the soaking time is 5min-30 min.
Compared with the prior art of coating photoresist, the method can obtain the following technical effects: the process of silk-screen printing acid-resistant glue is adopted, so that the process flow is greatly shortened, the GPP production efficiency is improved, the use amount of chemical raw materials is reduced, and the cost is effectively reduced.
Of course, it is not necessary for any one product to achieve all of the above-described technical effects simultaneously.
Detailed Description
Embodiments of the present application will be described in detail with reference to the following embodiments, so that how to implement the technical means for solving the technical problems and achieving the technical effects of the present application can be fully understood and implemented.
A silicon chip protection method during groove corrosion is characterized in that a silicon chip is protected in a mode of printing acid-resistant wax on the surface of the silicon chip. The process flow for printing the acid-resistant wax comprises the following steps: pre-baking, printing acid-resistant wax on the N surface, baking, printing acid-resistant wax on the P surface, and baking. And pre-baking, namely baking the silicon wafer before printing the acid-resistant wax, and drying moisture on the surface of the silicon wafer to enhance the adhesion between the printing wax and the surface of the silicon wafer, so as to avoid the poor phenomenon of wax falling off on the surface of the silicon wafer after subsequent corrosion.
The acid-resistant wax mainly comprises the following components: 2-butoxyethanol, talc and 2- (2-ethoxyethoxy) ethyl acetate, without asbestos fibres. Wherein, the weight of the 2-butoxyethanol accounts for 20 to 25 percent; the weight proportion of the talcum powder is 10-20 percent; the weight of the acetic acid-2- (2-ethoxy) ethyl ester accounts for 10-20%.
When the printed protective layer is not needed, the protective layer needs to be removed in the subsequent process, and the usually selected removal mode is to soak the protective layer in a removal solvent, wherein the solvent is 2-10% KOH solution, and the soaking removal time is 5-30 min.
The printing method tests various protective slurry, wherein the printing effect of the acid-resistant wax is optimal, and the printing method is most suitable for being used as a silicon chip protective layer by silk-screen printing. The printing test conditions for the various protective pastes were as follows:
1. photoresist: and printing the negative photoresist on the surface of the silicon wafer by adopting a screen printing method. Observed under a 10-fold microscope, the results shown are: the photoresist blocks the screen holes, resulting in incomplete patterns. When observed under a 100-fold microscope, the display result is as follows: the accuracy of the printed lines is poor. It is known that negative photoresists are not suitable for printing.
2. Organic solvent + photoresist: and printing the cellulose + negative photoresist mixture on the surface of the silicon wafer by adopting a screen printing method. Observed under a 10-fold microscope, the results shown are: the surface has a large amount of bubbles, and the photoresist blocks the screen holes, so that the pattern is incomplete. When observed under a 100-fold microscope, the display result is as follows: the patterns are connected, and bubbles are arranged on the surface. It is known that cellulose + negative photoresist mixtures are not suitable for printing.
3. Emulsion exposure: and printing the photosensitive emulsion on the surface of the silicon wafer by adopting a screen printing method. Observed under a 10-fold microscope, the results shown are: the printing primary glue amount is not enough, and bubbles are arranged on the surface of the graph; the glue amount OK was printed four times, but the pattern surface had bubbles. When observed under a 100-fold microscope, the display result is as follows: the printed lines are not accurate enough, the surface is rough, and the surface of the graph has bubbles. It is known that the emulsion printed with bubbles and coarse lines, and the printing effect was poor.
4. Acid-resistant wax: and (3) printing acid-resistant wax on the surface of the silicon wafer by adopting a screen printing method. Observed under a 10-fold microscope, the results shown are: the glue amount OK is printed once, and the graphic surface has almost no bubbles. When observed under a 100-fold microscope, the display result is as follows: the printed line has good precision, and the surface of the graph has almost no bubbles. It is known that acid resistant waxes are well suited for screen printing to protect silicon wafers.
Different baking parameters of the acid-proof wax can cause different glue dropping degree and adhesive force during subsequent corrosion, and influence the depth and corrosion effect of the groove corrosion. Through a plurality of tests, the preferable conditions for baking the silicon wafer to resist acid wax are as follows: baking in an oven at 90-180 ℃ for 20-60 min. The protective layer is baked in an oven at 90-180 ℃ for 20-60 min, only the edge part of the protective layer is subjected to glue dropping in the subsequent groove corrosion process, the glue dropping degree is small, and the adhesion is not good, so that the protective layer is the optimal choice. The test results are shown in table 1.
| Serial number | Post-printing baking time | Depth of corrosion (um) | Wax condition of surface after corrosion |
| 1 | 10min | 36 | Fall off in one piece |
| 2 | 20min | 45 | After flushing, the periphery of the product falls off locally, and the product is wiped lightly to completely fall off; |
| 3 | 30min | 51 | the degree is slightly better than 20min |
| 4 | 40min | 55 | The cleaning agent does not fall off after flushing, and all fall off after being lightly wiped; |
| 5 | 50min | 60 | local shedding after wiping |
| 6 | 60min | 66 | After flushing, the periphery of the product falls off locally, and the product is wiped gently to fall off completely |
| 7 | 70min | 72 | Local exfoliation |
TABLE 1 test results of acid wax resistance baking conditions
The invention has the beneficial effects that: the process of screen printing acid-resistant glue is adopted to replace the original method of coating photoresist, the process flow is greatly shortened, the GPP production efficiency is improved, meanwhile, the use amount of chemical raw materials is reduced, and the cost is effectively reduced.
The silicon wafer protection method and the silicon wafer in trench etching provided by the embodiment of the present application are described in detail above. The above description of the embodiments is only for the purpose of helping to understand the structure of the present application and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, different manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a commodity or system that includes the element.
The foregoing description shows and describes several preferred embodiments of the application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the application as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (6)
1. A silicon chip protection method during trench etching is characterized in that: printing acid-resistant wax on the surface of a silicon wafer to protect the silicon wafer; the step of printing the acid-resistant wax sequentially comprises the following steps: pre-baking, printing acid-resistant wax on the N surface, baking, printing acid-resistant wax on the P surface, and baking; or pre-baking, printing acid-resistant wax on the P surface, baking, printing acid-resistant wax on the N surface, and baking; the acid resistant wax component comprises: 2-butoxyethanol, talc and 2- (2-ethoxyethoxy) ethyl acetate.
2. The method for protecting a silicon wafer during trench etching according to claim 1, wherein: the acid-resistant wax composition does not include asbestos fibers.
3. The method for protecting a silicon wafer during trench etching according to claim 1, wherein: the baking condition is that the silicon wafer is placed in an oven with the temperature of 90-180 ℃ to be baked for 20-60 min.
4. The method for protecting a silicon wafer during trench etching according to claim 1, wherein: the step of printing the acid-resistant wax further comprises removing the acid-resistant wax when protection is not subsequently required.
5. The method for protecting a silicon wafer during trench etching according to claim 4, wherein: the operation of removing the acid-resistant wax is to put the silicon wafer printed with the acid-resistant wax into a solution for soaking.
6. The method for protecting a silicon wafer during trench etching according to claim 5, wherein: the solution is 2% -10% KOH solution, and the soaking time is 5min-30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615694.3A CN109309016B (en) | 2017-07-26 | 2017-07-26 | Silicon chip protection method during groove corrosion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615694.3A CN109309016B (en) | 2017-07-26 | 2017-07-26 | Silicon chip protection method during groove corrosion |
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| CN109309016A CN109309016A (en) | 2019-02-05 |
| CN109309016B true CN109309016B (en) | 2021-05-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3470443B2 (en) * | 1995-03-16 | 2003-11-25 | 株式会社デンソー | Semiconductor wafer etching method |
| CN101916801A (en) * | 2010-07-21 | 2010-12-15 | 中山大学 | Process for preparing selective emitter solar crystalline silicon solar cell |
| CN102280524B (en) * | 2011-07-07 | 2013-08-21 | 山东力诺太阳能电力股份有限公司 | Method for preparing solar battery plate with color patterns |
| CN102437242B (en) * | 2011-12-05 | 2014-06-25 | 天威新能源控股有限公司 | Method for opening passivation layer on back surface of solar cell |
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