CN109308986A - A kind of ion implantation apparatus chip cooling device - Google Patents
A kind of ion implantation apparatus chip cooling device Download PDFInfo
- Publication number
- CN109308986A CN109308986A CN201710621105.2A CN201710621105A CN109308986A CN 109308986 A CN109308986 A CN 109308986A CN 201710621105 A CN201710621105 A CN 201710621105A CN 109308986 A CN109308986 A CN 109308986A
- Authority
- CN
- China
- Prior art keywords
- chip
- cooling
- ion implantation
- implantation apparatus
- target disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of ion implantation apparatus chip cooling devices.A kind of ion implantation apparatus chip carrier adsorbs chip by electrostatic adsorption force, to make its normal work invent a kind of chip cooling device, to reduce temperature of the chip in injection process.The device mainly includes: target disc pedestal (1), gas cooling pipeline (2), thermal plastic insulation (3), static sucker component (4), chip (5), vacuum chamber (6), cooling water pipeline (7).The device characteristic is, static sucker component (4) is Nian Jie with target disc pedestal (1) by thermal plastic insulation (3), chip (5) passes through Electrostatic Absorption on the surface of static sucker component (4), target disc pedestal (1) designs cooling water pipeline (7) and gas cooling line (2), and whole device is located in vacuum chamber (6).Device working principle is described in detail in specification, and gives specific embodiment.The present invention relates to ion implantation apparatus, are under the jurisdiction of field of semiconductor manufacture.
Description
Technical field
The present invention relates to a kind of chip cooling devices, particularly suitable for the ion implantation apparatus in semiconductor manufacturing equipment.
Background technique
Ion implantation apparatus is the exemplary apparatus of semiconductor technology intermediate ion doping, and ion source generates the ion for needing to adulterate
Beam, ion beam are transferred to the silicon chip surface in target chamber end process cavity using quality analysis, correction, acceleration.
With the development of semiconductor technology, and with the diminution of speciality line width, the raising of complex process degree, to chip
Technique injection temperature also proposed increasingly higher demands.One of an important factor for having become device win or lose.Broadband from
Sub- implanter beam-out energy is higher, line and when very big implantation dosage, and the technique injection temperature of wafer surface can be very high, must
Effectively measure must be taken to reduce the temperature in wafer technique injection process, the present invention is based on such demand and designs.
Summary of the invention
1. a kind of ion implantation apparatus chip cooling device.The device mainly includes: target disc pedestal (1), gas cooling pipeline
(2), thermal plastic insulation (3), static sucker component (4), chip (5), vacuum chamber (6), cooling water pipeline (7).
2. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, electrostatic is inhaled
Disk component (4) is Nian Jie with target disc pedestal (1) by thermal plastic insulation (3), and chip (5) is by Electrostatic Absorption in static sucker component
(4) surface, target disc pedestal (1) design cooling water pipeline (7) and gas cooling line (2), whole device are located at vacuum chamber
(6) in.
3. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, electrostatic is inhaled
Disk component (4) is Nian Jie by thermal plastic insulation (3) with target disc pedestal (1), has while playing high-voltage isulation preferable thermally conductive
Performance.
4. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, target disc bottom
Seat (1) design cooling water pipeline (7) passes through the chip (5) on the surface of conduction of heat cooling static sucker component (4).
5. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, target disc bottom
Seat (1) design gas cooling pipeline (2) is passed through between static sucker component (4) and chip (5) in vacuum chamber (6)
Micro inert gas increases medium heat conduction rate, implements to cool down to chip (5).
The present invention has the following obvious advantages:
1. definite functions, with strong points.
2. structure is simple, easy to manufacture.
3. designing cooling water and gas cooling dual-cooled mode, cooling effect being significant.
Detailed description of the invention
Fig. 1 is assembly effect diagram of the invention.
Fig. 2 is the cross-sectional view of target disc pedestal of the invention.
1- target disc pedestal, 2- gas cooling pipeline, 3- thermal plastic insulation, 4- static sucker component, 5- chip, 6- vacuum
Chamber, 7- cooling water pipeline.
Specific embodiment
It 1 is further introduced with reference to the accompanying drawing to 2 couples of present invention of attached drawing, but not as a limitation of the invention.
The invention discloses a kind of ion implantation apparatus chip cooling devices.The device mainly includes: target disc pedestal (1), gas
Body cooling line (2), thermal plastic insulation (3), static sucker component (4), chip (5), vacuum chamber (6), cooling water pipeline
(7)。
Specific implementation step is as follows:
Static sucker component (4) is Nian Jie with target disc pedestal (1) by thermal plastic insulation (3), and chip (5) passes through Electrostatic Absorption
On the surface of static sucker component (4), target disc pedestal (1) designs cooling water pipeline (7) and gas cooling line (2), entire to fill
Setting in vacuum chamber (6).
Static sucker component (4) is Nian Jie by thermal plastic insulation (3) with target disc pedestal (1), is playing the same of high-voltage isulation
When have preferable heating conduction.Target disc pedestal (1) designs cooling water pipeline (7), passes through the cooling electrostatic chuck group of conduction of heat
The chip (5) on the surface of part (4).Meanwhile target disc pedestal (1) design gas cooling pipeline (2), in vacuum chamber (6), quiet
It is passed through micro inert gas between electric Suction cup assembly (4) and chip (5), increases medium heat conduction rate, chip (5) are implemented to cool down.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the present invention, but for illustrating
The present invention.All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in this
Within the protection scope of invention.
Claims (5)
1. a kind of ion implantation apparatus chip cooling device.The device mainly includes: target disc pedestal (1), gas cooling pipeline (2),
Thermal plastic insulation (3), static sucker component (4), chip (5), vacuum chamber (6), cooling water pipeline (7).
2. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, electrostatic chuck group
Part (4) is Nian Jie with target disc pedestal (1) by thermal plastic insulation (3), and chip (5) is by Electrostatic Absorption in static sucker component (4)
Surface, target disc pedestal (1) design cooling water pipeline (7) and gas cooling line (2), whole device be located at vacuum chamber (6)
It is interior.
3. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, electrostatic chuck group
Part (4) is Nian Jie by thermal plastic insulation (3) with target disc pedestal (1), there is preferable heating conduction while playing high-voltage isulation.
4. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, target disc pedestal
(1) cooling water pipeline (7) are designed, passes through the chip (5) on the surface of conduction of heat cooling static sucker component (4).
5. a kind of ion implantation apparatus chip cooling device according to claim 1, the device characteristic are, target disc pedestal
(1) gas cooling pipeline (2) are designed, in vacuum chamber (6), is passed through between static sucker component (4) and chip (5) micro
Inert gas increases medium heat conduction rate, implements to cool down to chip (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621105.2A CN109308986A (en) | 2017-07-26 | 2017-07-26 | A kind of ion implantation apparatus chip cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621105.2A CN109308986A (en) | 2017-07-26 | 2017-07-26 | A kind of ion implantation apparatus chip cooling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109308986A true CN109308986A (en) | 2019-02-05 |
Family
ID=65202778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710621105.2A Pending CN109308986A (en) | 2017-07-26 | 2017-07-26 | A kind of ion implantation apparatus chip cooling device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109308986A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101946316A (en) * | 2008-03-28 | 2011-01-12 | S.O.I.Tec绝缘体上硅技术公司 | Temperature control injects |
| US20140054280A1 (en) * | 2012-08-23 | 2014-02-27 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
| CN105845613A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic chuck and manufacturing method thereof |
-
2017
- 2017-07-26 CN CN201710621105.2A patent/CN109308986A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101946316A (en) * | 2008-03-28 | 2011-01-12 | S.O.I.Tec绝缘体上硅技术公司 | Temperature control injects |
| US20140054280A1 (en) * | 2012-08-23 | 2014-02-27 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
| CN105845613A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic chuck and manufacturing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190205 |