CN109302149A - Signal amplification circuit - Google Patents
Signal amplification circuit Download PDFInfo
- Publication number
- CN109302149A CN109302149A CN201710617294.6A CN201710617294A CN109302149A CN 109302149 A CN109302149 A CN 109302149A CN 201710617294 A CN201710617294 A CN 201710617294A CN 109302149 A CN109302149 A CN 109302149A
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- China
- Prior art keywords
- circuit
- amplifier
- impedance transformer
- input terminal
- signal amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003321 amplification Effects 0.000 title claims abstract description 38
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 38
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 33
- 230000001629 suppression Effects 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of signal amplification circuit, which includes stabilizing circuit, and stabilizing circuit includes out of band signal suppression circuit, radio frequency frequency selective device and impedance transformer；High impedance is presented in the first end of impedance transformer, and the second end of impedance transformer is connect with one end of radio frequency frequency selective device, the other end ground connection of radio frequency frequency selective device relative impedances converter；The both ends of out of band signal suppression circuit are connect with the both ends of radio frequency frequency selective device respectively；The input terminal connection of output end and output matching circuit of the first end and amplifier of the connection of the input terminal of the first end of impedance transformer and the output end of input matching circuit and the amplifier or impedance transformer or rf input terminal of the first end with the input terminal of the input matching circuit and for input signal of impedance transformer are connect or the output end of impedance transformer and output matching circuit and the RF output end connection for output signal.The present invention improves the stability of signal amplification circuit.
Description
Technical field
The present invention relates to circuit field more particularly to signal amplification circuits.
Background technique
With the development of system integration technology, casacade multi-amplifier is widely used.In order to improve such multistage amplifier circuit
Stability but work as casacade multi-amplifier usually in the input terminal series resistance of casacade multi-amplifier or access attenuation outside a channel network
Input terminal series resistance or when attenuation outside a channel network, the defeated of the prime small signal amplifier of casacade multi-amplifier can only be acted on
Enter end, other regions of the casacade multi-amplifier of encapsulation do not act on, therefore such method is to promoting the effect of circuit stability performance not
It is prominent.
Summary of the invention
The main purpose of the present invention is to provide a kind of signal amplification circuits, it is intended to solve the input terminal in casacade multi-amplifier
Series resistance or attenuation outside a channel network are for improving amplifying circuit stabilizing effect not distinct issues.
To achieve the goals above, the present invention provides a kind of signal amplification circuit, including input matching circuit, output matching
Circuit and amplifier for amplifying input signal；Wherein, the input matching circuit and the output matching circuit are for holding
Row impedance matching, the output end of the input matching circuit are connect with the input terminal of the amplifier, the output of the amplifier
End is connect with the input terminal of the output matching circuit；
The signal amplification circuit further includes stabilizing circuit, and the stabilizing circuit includes out of band signal suppression circuit, radio frequency
Frequency selective device and impedance transformer；High impedance, the second end of the impedance transformer is presented in the first end of the impedance transformer
It is connect with one end of the radio frequency frequency selective device, the other end ground connection of the radio frequency frequency selective device relative impedances converter；It is described
The both ends of out of band signal suppression circuit are connect with the both ends of radio frequency frequency selective device respectively；
The first end of the impedance transformer and the output end of the input matching circuit and the input terminal of the amplifier
The first end and the output end of the amplifier and the input terminal of the output matching circuit of connection or the impedance transformer
Radio frequency of the first end of connection or the impedance transformer with the input terminal of the input matching circuit and for input signal
The radio frequency of input terminal connection or the impedance transformer with the output end of the output matching circuit and for output signal
Output terminal connection.
Preferably, the signal amplification circuit further include bias supply input terminal, power input, grid feed circuit and
Drain feed circuit；One end of the grid feed circuit is connect with the input terminal of the amplifier, the grid feed circuit
One end connect with the bias supply input terminal；One end of the drain electrode feed circuit is connect with the power input, institute
The other end for stating drain electrode feed circuit is connect with the output end of the amplifier.
Preferably, the input terminal of the grid feed circuit and the amplifier is arranged in the first end of the stabilizing circuit
Between.
Preferably, the output end and the drain electrode feed circuit of the amplifier is arranged in the first end of the stabilizing circuit
Between.
Preferably, the work frequency of the working frequency of the impedance transformer and the radio frequency frequency selective device and the amplifier
Rate is identical.
Preferably, the radio frequency frequency selective device is microwave capacitors corresponding with the amplifier operation frequency.
Preferably, the impedance transformer is the transmission line of a quarter for the central wavelength that length is equal to the signal
Road.
Preferably, the transmission line is microstrip line or strip line.
Preferably, the out of band signal suppression circuit includes resistance and filter capacitor, one end of the resistance and the resistance
The connection of resistance parallel operation, the other end of the resistance are connect with one end of the filter capacitor, another termination of the filter capacitor
Ground.
Preferably, the amplifier is power amplifier.
In technical solution of the present invention, stabilizing circuit is provided in signal amplification circuit, the stabilizing circuit passes through resistance
Resistance parallel operation, radio frequency frequency selective device are in conjunction with out of band signal suppression circuit, outside out of band signal suppression circuit is to working frequency range
Signal is inhibited, and while promoting the stability of circuit, high resistant is presented by impedance transformer, it is therefore prevented that amplifier operation frequency
Segment signal leakage, making out of band signal suppression circuit not influences the amplification of working frequency range signal.In addition, additionally providing plurality of stable electricity
The setting position on road facilitates design and layout.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of stabilizing circuit in signal amplification circuit embodiment of the present invention；
Fig. 2 is the circuit structure block diagram of one embodiment of signal amplification circuit of the present invention；
Fig. 3 is the circuit structure block diagram of another embodiment of signal amplification circuit of the present invention；
Fig. 4 is the circuit structure block diagram of the another embodiment of signal amplification circuit of the present invention；
Fig. 5 is the circuit structure block diagram of the another embodiment of signal amplification circuit of the present invention；
Fig. 6 is the circuit structure block diagram of the another embodiment of signal amplification circuit of the present invention；
Fig. 7 is the circuit structure block diagram of the another embodiment of signal amplification circuit of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Drawing reference numeral explanation:
| Label | Title | Label | Title |
| 10 | Input matching circuit | 43 | Out of band signal suppression circuit |
| 20 | Amplifier | R | Resistance |
| 30 | Output matching circuit | C | Filter capacitor |
| 40 | Stabilizing circuit | RFIN | Rf input terminal |
| 50 | Grid feed circuit | RFOUT | RF output end |
| 60 | Drain feed circuit | BIASIN | Bias supply input terminal |
| 41 | Impedance transformer | VCCIN | Power input |
| 42 | Radio frequency frequency selective device |
Specific embodiment
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being related to " first ", " second " etc. in the present invention is used for description purposes only, and should not be understood as referring to
Show or imply its relative importance or implicitly indicates the quantity of indicated technical characteristic." first ", " are defined as a result,
Two " feature can explicitly or implicitly include at least one of the features.In addition, the technical solution between each embodiment can
It to be combined with each other, but must be based on can be realized by those of ordinary skill in the art, when the combination of technical solution occurs
Conflicting or cannot achieve when, will be understood that the combination of this technical solution is not present, also not the present invention claims protection model
Within enclosing.
The present invention provides a kind of signal amplifier.
Please with reference to Fig. 1 to Fig. 5, which includes input matching circuit 10, for amplifying input signal
Amplifier 20 and output matching circuit 30；Wherein, the input matching circuit 10 and the output matching circuit 30 are for holding
Row impedance matching, the output end of the input matching circuit 10 are connect with the input terminal of the amplifier 20, the amplifier 20
Output end connect with the input terminal of the output matching circuit 30；
The signal amplification circuit further includes stabilizing circuit 40, and wherein Fig. 1 is stabilizing circuit 40 in signal amplification circuit
Concrete structure schematic diagram, the stabilizing circuit 40 include that impedance transformer 41, radio frequency frequency selective device 42 and out of band signal inhibit electricity
Road 43；High impedance is presented in the first end of the impedance transformer 41, and the second end of the impedance transformer 41 and the radio frequency select
One end of frequency device 42 connects, the other end ground connection of the 42 relative impedances converter 41 of radio frequency frequency selective device；Believe outside the band
The both ends of number suppression circuit 43 are connect with the both ends of radio frequency frequency selective device 42 respectively；
The output end and the amplifier 20 of the first end of the impedance transformer 41 and the input matching circuit 10
The first end of input terminal connection or the impedance transformer 41 matches electricity with the output end of the amplifier 20 and the output
The input terminal on road 30 connects or the input terminal and use of the first end of the impedance transformer 41 and the input matching circuit 10
In input signal rf input terminal RFIN connection or the impedance transformer 41 and the output matching circuit 30 it is defeated
Outlet and the sub- RFOUT connection of RF output end for output signal.
In the signal amplification circuit, amplifier 20 can be configured according to actual needs, by the type of amplifier 20
It divides, above-mentioned amplifier 20 can be metal-oxide-semiconductor or triode；By taking triode as an example, the base stage conduct of the triode can be
The input terminal of amplifier 20, output end of the collector of triode as amplifier 20, in addition the emitter of triode is grounded.It presses
The function division of amplifier 20, above-mentioned amplifier 20 can be power amplifier, for generating most under the conditions of given distortion rate
High-power output.Optionally, the amplifier 20 is casacade multi-amplifier, the i.e. electricity of two or more amplifiers of enclosed inside
Subcomponent.
In embodiments of the present invention, it is also set up in addition to input matching circuit 10, output matching circuit 30 and amplifier 20
Stabilizing circuit 40, the stabilizing circuit 40 is for while not influencing 20 working frequency range characteristic of amplifier improving the signal
The stability of amplifying circuit, the working frequency of radio frequency frequency selective device 42 and the impedance transformer 41 can in the stabilizing circuit 40
With consistent with the working frequency of the amplifier 20.Wherein, above-mentioned radio frequency frequency selective device 42 can be and the amplifier 20
The corresponding microwave capacitors of working frequency；It is to be understood that above-mentioned radio frequency frequency selective device 42 can also be using other radio frequency choosings
Frequency device, such as microstrip line, herein without exhaustion.The implementation method of specific stabilizing circuit 40 is pressed down by setting out of band signal
Circuit 43, radio frequency frequency selective device 42 and impedance transformer 41 processed, one end of the impedance transformer 41 is as stabilizing circuit 40
High impedance is presented in output end, i.e., enters in terms of the access point of 20 place radio frequency path of amplifier and stabilizing circuit 40, corresponding work
Making frequency band signals circuit impedance is high resistant, so that reaching prevents working frequency range signal from revealing, out of band signal suppression circuit 43 will not
The effect that the working frequency range characteristic of amplifier 20 is had an impact.It, can be under the premise of not influencing amplifier 20 and working normally
It is composed in series out of band signal suppression circuit 43 by resistance R and filter capacitor C, promotes circuit using the damping action of resistance R
Stability, the separated by direct communication characteristic of filter capacitor C, which avoids forming big dc power on resistance R, burns resistance R, to removing work
The signal made outside frequency range is inhibited, therefore the technical solution of the embodiment of the present invention improves the stabilization of signal amplification circuit
Property, effect is obvious, strong antijamming capability.
Further, since high impedance is externally presented in stabilizing circuit, the setting of specific location can carry out according to actual needs
Setting does not need stabilizing circuit 40 to be arranged in fixed position, as long as the stabilization in parallel on the radio frequency path of amplifier 20
Circuit 40 can be realized the effect of stability for improving signal amplification circuit etc., facilitate the layout and design of circuit.
Further, the specific structure of the impedance transformer 41 can be configured according to actual needs, can be length
Degree be equal to the signal central wavelength a quarter transmission line, the transmission line can be microstrip line can be it is band-like
Line.It should be noted that the quarter-wave impedance transformer 41 can be regarded as one section of time-limited transmission line about
Have the function of that terminal voltage and electric current and terminating load impedance are converted, good echo suppressing or counteracting can be played
Effect.
The circuit structure of out of band signal suppression circuit 43 of above-mentioned resistance R and filter capacitor C composition is, the resistance R's
One end is connect with the impedance transformer 41, and the other end of the resistance R is connect with one end of the filter capacitor C, the filter
The other end of wave capacitor C is grounded.
Further, please with reference to Fig. 6 and Fig. 7, above-mentioned signal amplification circuit further includes bias supply input terminal
BIASIN, power input VCCIN, grid feed circuit 50 and drain electrode feed circuit 60；The one of the grid feed circuit 50
End is connect with the input terminal of the amplifier 20, the other end of the grid feed circuit 50 and the bias supply input terminal
BIASIN connection；One end of the drain electrode feed circuit 60 is connect with the power input VCCIN, the drain electrode feed circuit
60 other end is connect with the output end of the amplifier 20.At this point, the first end of the stabilizing circuit 40 can also be arranged in
Between the grid feed circuit 50 and the input terminal of the amplifier 20 or be arranged in the output end of the amplifier 20 with
Between the drain electrode feed circuit 60.
It should be noted that in order to keep amplifier 20 working properly, it is necessary to feeder ear is set for the amplifier 20,
In the technical scheme, grid feed electricity is respectively provided in conjunction with bias supply input terminal BIASIN and power input VCCIN
Road 50 and drain electrode feed circuit 60 are that the place radio frequency path of amplifier 20 is powered.Stabilizing circuit 40 is arranged in parallel simultaneously
Be arranged between grid feed circuit 50 and the input terminal of the amplifier 20 or in parallel drain electrode feed circuit 60 with it is described
Between the output end of amplifier 20, make to look over from stabilizing circuit 40 and the tie point of 20 major loop of amplifier, corresponding work
High impedance is presented in frequency band signals circuit impedance, and avoiding out of band signal suppression circuit 43 in stabilizing circuit 40 influences amplifier 20
Working frequency range characteristic.
It is following to be illustrated with specific embodiment, by taking 3.5G Hz Doherty power amplifier as an example, the power amplifier
Power supply source be 28V, stabilizing circuit, impedance variations are accessed between the input terminal of output matching circuit and the output end of amplifier
Device is selected as quarter-wave microstrip line, length 12.7mm, width 0.5mm, and radio frequency frequency selective device selects 5.6pf microwave electricity
Hold.Resistance in out of band signal suppression circuit is 50 ohm, and filter capacitor is the capacitor of 0.1UF.Signal amplifier electricity
Before Lu Wei accesses the stabilizing circuit, low frequency has the abnormal signal of -10dB lower than main signal, different after the stabilizing circuit is added
Regular signal disappears, and power amplifier output power when the amplifier is from output terminal output signal and efficiency do not have significant changes.
The above is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of signal amplification circuit, which is characterized in that including input matching circuit, output matching circuit and for amplifying input
The amplifier of signal；Wherein, the input matching circuit and the output matching circuit are for executing impedance matching, the input
The output end of match circuit is connect with the input terminal of the amplifier, the output end of the amplifier and the output matching circuit
Input terminal connection；
The signal amplification circuit further includes stabilizing circuit, and the stabilizing circuit includes out of band signal suppression circuit, radio frequency frequency-selecting
Device and impedance transformer；High impedance, the second end of the impedance transformer and institute is presented in the first end of the impedance transformer
State one end connection of radio frequency frequency selective device, the other end ground connection of the radio frequency frequency selective device relative impedances converter；Outside the band
The both ends of signal suppression circuit are connect with the both ends of radio frequency frequency selective device respectively；
The first end of the impedance transformer is connect with the input terminal of the output end of the input matching circuit and the amplifier
Or the first end of the impedance transformer is connect with the input terminal of the output end of the amplifier and the output matching circuit
Or the first end of the impedance transformer is inputted with the input terminal of the input matching circuit and the radio frequency for input signal
Terminal connection or the impedance transformer are exported with the output end of the output matching circuit and the radio frequency for output signal
Terminal connection.
2. signal amplification circuit as described in claim 1, which is characterized in that the signal amplification circuit further includes bias supply
Input terminal, power input, grid feed circuit and drain electrode feed circuit；One end of the grid feed circuit and the amplification
The input terminal of device connects, and one end of the grid feed circuit is connect with the bias supply input terminal；The drain electrode feed electricity
The one end on road is connect with the power input, and the other end of the drain electrode feed circuit and the output end of the amplifier connect
It connects.
3. signal amplification circuit as claimed in claim 2, which is characterized in that the first end of the stabilizing circuit is arranged described
Between grid feed circuit and the input terminal of the amplifier.
4. signal amplification circuit as claimed in claim 2, which is characterized in that the first end of the stabilizing circuit is arranged described
Between the output end of amplifier and the drain electrode feed circuit.
5. signal amplification circuit as described in claim 1, which is characterized in that the impedance transformer and radio frequency frequency-selecting dress
The working frequency set is identical as the working frequency of the amplifier.
6. signal amplification circuit as claimed in claim 5, which is characterized in that the radio frequency frequency selective device is and the amplifier
The corresponding microwave capacitors of working frequency.
7. signal amplification circuit as described in claim 1, which is characterized in that the impedance transformer is that length is equal to the letter
Number central wavelength a quarter transmission line.
8. signal amplification circuit as claimed in claim 7, which is characterized in that the transmission line is microstrip line or strip line.
9. such as the described in any item signal amplification circuits of claim 1-8, which is characterized in that the out of band signal suppression circuit packet
Resistance and filter capacitor are included, one end of the resistance is connect with the impedance transformer, the other end of the resistance and the filter
One end of wave capacitor connects, the other end ground connection of the filter capacitor.
10. such as the described in any item signal amplification circuits of claim 1-8, which is characterized in that the amplifier is power amplification
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710617294.6A CN109302149B (en) | 2017-07-25 | 2017-07-25 | Signal amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710617294.6A CN109302149B (en) | 2017-07-25 | 2017-07-25 | Signal amplifying circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109302149A true CN109302149A (en) | 2019-02-01 |
| CN109302149B CN109302149B (en) | 2023-04-07 |
Family
ID=65167954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710617294.6A Active CN109302149B (en) | 2017-07-25 | 2017-07-25 | Signal amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109302149B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112448682A (en) * | 2019-09-02 | 2021-03-05 | 立积电子股份有限公司 | Amplifying device |
| CN114157252A (en) * | 2021-11-30 | 2022-03-08 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
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| CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
| CN103490733A (en) * | 2013-09-26 | 2014-01-01 | 华东交通大学 | Double-frequency-band Doherty power amplifier with frequency ratio of 1.25-2.85 |
| WO2015006441A2 (en) * | 2013-07-11 | 2015-01-15 | Crestcom, Inc. | Transmitter and method with rf power amplifier having stabilized bias |
| CN104716911A (en) * | 2013-12-13 | 2015-06-17 | 中兴通讯股份有限公司 | Radio frequency power amplifier, base station and impedance adjusting method |
| CN204794909U (en) * | 2015-07-21 | 2015-11-18 | 桂林电子科技大学 | A RF power amplifier for coupling resonance wireless power transmission device |
| CN106301237A (en) * | 2016-07-25 | 2017-01-04 | 北京工业大学 | Low-power consumption three frequency band low-noise amplifier |
| CN106712725A (en) * | 2016-11-03 | 2017-05-24 | 南京邮电大学 | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
| WO2015006441A2 (en) * | 2013-07-11 | 2015-01-15 | Crestcom, Inc. | Transmitter and method with rf power amplifier having stabilized bias |
| CN103490733A (en) * | 2013-09-26 | 2014-01-01 | 华东交通大学 | Double-frequency-band Doherty power amplifier with frequency ratio of 1.25-2.85 |
| CN104716911A (en) * | 2013-12-13 | 2015-06-17 | 中兴通讯股份有限公司 | Radio frequency power amplifier, base station and impedance adjusting method |
| CN204794909U (en) * | 2015-07-21 | 2015-11-18 | 桂林电子科技大学 | A RF power amplifier for coupling resonance wireless power transmission device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112448682A (en) * | 2019-09-02 | 2021-03-05 | 立积电子股份有限公司 | Amplifying device |
| CN114157252A (en) * | 2021-11-30 | 2022-03-08 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
| CN114157252B (en) * | 2021-11-30 | 2023-11-28 | 深圳飞骧科技股份有限公司 | Power amplifying circuit and radio frequency signal processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109302149B (en) | 2023-04-07 |
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