CN109300827B - 芯片的制造方法 - Google Patents

芯片的制造方法 Download PDF

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Publication number
CN109300827B
CN109300827B CN201810795006.0A CN201810795006A CN109300827B CN 109300827 B CN109300827 B CN 109300827B CN 201810795006 A CN201810795006 A CN 201810795006A CN 109300827 B CN109300827 B CN 109300827B
Authority
CN
China
Prior art keywords
workpiece
holding
dividing
chip
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810795006.0A
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English (en)
Chinese (zh)
Other versions
CN109300827A (zh
Inventor
淀良彰
赵金艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN109300827A publication Critical patent/CN109300827A/zh
Application granted granted Critical
Publication of CN109300827B publication Critical patent/CN109300827B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/37—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations with orientating and positioning by means of a vibratory bowl or track
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
CN201810795006.0A 2017-07-24 2018-07-19 芯片的制造方法 Active CN109300827B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-142910 2017-07-24
JP2017142910A JP6961297B2 (ja) 2017-07-24 2017-07-24 チップの製造方法

Publications (2)

Publication Number Publication Date
CN109300827A CN109300827A (zh) 2019-02-01
CN109300827B true CN109300827B (zh) 2024-03-19

Family

ID=65172593

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810795006.0A Active CN109300827B (zh) 2017-07-24 2018-07-19 芯片的制造方法

Country Status (4)

Country Link
JP (1) JP6961297B2 (https=)
KR (1) KR102575795B1 (https=)
CN (1) CN109300827B (https=)
TW (1) TWI745606B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7189026B2 (ja) * 2019-01-07 2022-12-13 株式会社ディスコ 被加工物の加工方法
JP2021015823A (ja) * 2019-07-10 2021-02-12 株式会社ディスコ ウェーハの加工方法
JP7262904B2 (ja) * 2019-08-26 2023-04-24 株式会社ディスコ キャリア板の除去方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN104701219A (zh) * 2013-12-09 2015-06-10 株式会社迪思科 晶片加工装置
CN105750741A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN104701219A (zh) * 2013-12-09 2015-06-10 株式会社迪思科 晶片加工装置
CN105750741A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法

Also Published As

Publication number Publication date
JP2019024048A (ja) 2019-02-14
KR102575795B1 (ko) 2023-09-06
TWI745606B (zh) 2021-11-11
JP6961297B2 (ja) 2021-11-05
TW201909263A (zh) 2019-03-01
CN109300827A (zh) 2019-02-01
KR20190011197A (ko) 2019-02-01

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