CN109300499A - Data storage circuitry and data read-write method, array substrate, display device - Google Patents
Data storage circuitry and data read-write method, array substrate, display device Download PDFInfo
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- CN109300499A CN109300499A CN201811123121.XA CN201811123121A CN109300499A CN 109300499 A CN109300499 A CN 109300499A CN 201811123121 A CN201811123121 A CN 201811123121A CN 109300499 A CN109300499 A CN 109300499A
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- film transistor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
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Abstract
The invention discloses a kind of data storage circuitries, including at least one resistive element；After the set process by different electric currents, the resistive element is capable of forming different resistance values to be stored as data.The invention also discloses a kind of array substrate, display device and method for writing data, method for reading data.It is difficult or read difficult problem to be able to solve existing production information setting for data storage circuitry and its data read-write method provided by the invention, array substrate, display device.
Description
Technical field
The present invention relates to field of display technology, a kind of data storage circuitry and its data read-write method, array are particularly related to
Substrate, display device.
Background technique
Liquid crystal display is in the production process of display panel factory at present, it will usually pass through laser-marking metallic diaphragm
Modes such as (two dimensional codes) record panel id information；But after display panel is thinned, due to the appearances such as concave point/dirty, cause
Panel id information can not be normally read in display module factory.
But two dimensional code above-mentioned is because the reason of reading manner, it is necessary to be exposed, and cannot be hidden in display panel
In, so that needing additionally to reserve the position of setting two dimensional code on a display panel.And present display product design when, more
Narrow frame is more pursued, portioned product causes two dimensional code above-mentioned that can not be placed in narrow frame since frame is narrow,
Though still two dimensional code can be placed and read the problems such as more difficult.
Meanwhile in mould group production process, Mo Zu factory is also required to record mould group by way of generating mould group id information
Creation data；If without recording production information (such as bad (NG), non-defective unit (OK), the position NG, NG reason, sensor in real time
(Sensor) data etc.) function, client occur defective products be then difficult trace beginning of production.
Summary of the invention
In view of this, the first purpose of the embodiment of the present invention is, a kind of data storage circuitry and its reading and writing data are proposed
Method, array substrate, display device are able to solve the problem that existing production information setting is difficult or reading is difficult.
Based on above-mentioned purpose, the first aspect of the embodiment of the present invention provides a kind of data storage circuitry, including at least
One resistive element；After the set process by different electric currents, the resistive element is capable of forming different resistance values to make
It is stored for data.
Optionally, the data storage circuitry, including at least one storage unit；The storage unit includes at least one
Thin film transistor (TFT) and at least one described resistive element；The resistive element is completed under the switch control of the thin film transistor (TFT)
Data write-in and/or reading.
Optionally, the storage unit includes first film transistor, the second thin film transistor (TFT), the first resistive element and
Two resistive elements；First pole of the control electrode of the first film transistor and the second thin film transistor (TFT) is all connected with the first signal
Line, the control electrode of second thin film transistor (TFT) and the first pole of first film transistor are all connected with second signal line, and described
Second pole of one thin film transistor (TFT) connects the first end of first resistive element, and the second pole of second thin film transistor (TFT) connects
Connect the first end of second resistive element, the second end of the second end of first resistive element and second resistive element
It is all connected with third signal wire.
Optionally, the data storage circuitry includes the memory cell array of N row M column；Wherein, same array storage unit
First pole of the control electrode of first film transistor and the second thin film transistor (TFT) is all connected with same signal line, stores with a line single
The control electrode of the second thin film transistor (TFT) and the first pole of first film transistor of member are all connected with same signal line, same row
The second end of first resistive element is all connected with same signal line, with second resistive element of a line second end be all connected with it is same
Signal line.
Optionally, the thin film transistor (TFT) includes gate insulation layer and source-drain electrode, and the resistive element includes metallic substrates, absolutely
Edge layer and metal electrode；The gate insulation layer and the insulating layer of the resistive element are same layer, the film where the source-drain electrode
Layer is same layer with the metal electrode or is same layer with the metallic substrates.
Optionally, the resistive element includes metallic substrates, insulating layer and metal electrode；The production material of the metallic substrates
Material is Al, Cu, Ti or Mo, and the making material of the insulating layer is silica, the making material of the metal electrode be Al, Cu,
Ti or Mo.
The second aspect of the embodiment of the present invention provides a kind of array substrate, including such as preceding described in any item data
Storage circuit, the data storage circuitry are used to store the production information of the array substrate.
Optionally, the array substrate is used to form liquid crystal cell to box with color membrane substrates, and the color membrane substrates include first
Light shield layer and color blocking, first light shield layer is for blocking except by other light in addition to the color blocking；In the array base
After plate and color membrane substrates are to box, the data storage circuitry is located in the orthographic projection of first light shield layer.
Optionally, the array substrate includes the second light shield layer and thin film transistor (TFT) array, and second light shield layer is used for
The light from the array substrate back surface incident is blocked, to prevent it from irradiating the active layer in the thin film transistor (TFT) array；Institute
Stating resistive element includes metallic substrates；The metallic substrates and second light shield layer are same layer.
In terms of the third of the embodiment of the present invention, a kind of display device is provided, which is characterized in that including such as any one of preceding
The array substrate.
4th aspect of the embodiment of the present invention, provides a kind of data such as preceding described in any item data storage circuitries
Wiring method, comprising:
Obtain data to be stored；
The data to be stored is analyzed, and is converted into the resistance value of corresponding resistive element；
The set current of corresponding resistive element is determined according to the resistance value, and the set current is inputted to the resistive element
Complete set.
5th aspect of the embodiment of the present invention, provides a kind of data such as preceding described in any item data storage circuitries
Read method, comprising:
Read the resistance value of resistive element；
According to the corresponding relationship of resistance value and storing data, the resistance value is converted into storing data.
From the above it can be seen that data storage circuitry provided in an embodiment of the present invention and its data read-write method, battle array
Column substrate, display device by setting resistive element and are capable of forming different resistance values after different electric current set using it
Characteristic, using the resistive element as the device of storing data, so that data storage circuitry for storing data, Ke Yi
It is converted to its data stored subsequently through the resistance value of resistive element in reading circuit, without passing through physical identification
The mode of (such as laser scanning) goes to obtain storing data.In this way, being believed by specially designed data storage circuitry storage/reading
Breath, can not use optics two dimensional code employed in the prior art, and two dimensional code caused by avoiding in production is bad, while
Without being additionally that two dimensional code reserves exposed space, and then the narrow frame of display device may be implemented.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of resistive element in the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of one embodiment of storage unit in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another embodiment of storage unit in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of data storage circuitry in the embodiment of the present invention；
Fig. 5 a is that waveform diagram is written in the data of data storage circuitry in the embodiment of the present invention；
Fig. 5 b is that waveform diagram is written in the another data of data storage circuitry in the embodiment of the present invention；
Fig. 5 c is the reset wave schematic diagram of data storage circuitry in the embodiment of the present invention；
Fig. 5 d is the another reset wave schematic diagram of data storage circuitry in the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of array substrate in the embodiment of the present invention；
Fig. 7 is the flow diagram of method for writing data in the embodiment of the present invention；
Fig. 8 is the flow diagram of method for reading data in the embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
It should be noted that all statements for using " first " and " second " are for differentiation two in the embodiment of the present invention
The non-equal entity of a same names or non-equal parameter, it is seen that " first " " second " only for the convenience of statement, does not answer
It is interpreted as the restriction to the embodiment of the present invention, subsequent embodiment no longer illustrates this one by one.
The first aspect of the embodiment of the present invention provides a kind of data storage circuitry, is able to solve existing production letter
Breath setting is difficult or reads difficult problem.
The data storage circuitry, including at least one resistive element；It is described after the set process by different electric currents
Resistive element is capable of forming different resistance values to be stored as data.
Present invention by setting resistive element and is capable of forming difference after different electric current set using it
Resistance value characteristic, using the resistive element as the device of storing data, so that data for storing data store electricity
Road, can in subsequently through reading circuit the resistance value of resistive element and be converted to its data stored, without passing through
The mode of physical identification (such as laser scanning) goes to obtain storing data.In this way, by specially designed data storage circuitry storage/
Information is read, optics two dimensional code employed in the prior art can not be used, two dimensional code caused by avoiding in production is bad,
Exposed space is reserved for two dimensional code without additional simultaneously, and then the narrow frame of display device may be implemented.
Optionally, as shown in Figure 1a, the resistive element includes metallic substrates 21, insulating layer 22 and metal electrode 23, institute
It states metallic substrates 21, insulating layer 22 and metal electrode 23 and forms sandwich structure.(the set voltage in resistive element activation
4.4V), writable 4 kinds of resistance states (as shown in table 1): when limiting electric current is 1mA, the resistance of the first resistance state is about 250 Ω；When
When limitation electric current is 10 μ A, the resistance of the second resistance state is about 19k Ω；When limiting electric current is 1 μ A, the resistance of third resistance state is about
1.7MΩ；Corresponding, the resistance state after all resistance states resets (resetting voltage -0.7V) is the 4th resistance state, and resistance is about 100M Ω.
Specific data are as shown in Figure 1 b.In this way, when under the control in set voltage (or resetting voltage) and different limitation electric currents, the resistance
The resistance for becoming unit can be correspondingly changed, also, the resistance value of each resistance state exponentially changes, and can obviously be distinguished,
So as to refer to different information using different resistance states, and then achieve the purpose that store different data.
The resistance state of 1 resistive element of table
| Resistance state | Resistance value | Voltage | Electric current |
| First resistance state | 250Ω | 4.4V | 1mA |
| Second resistance state | 19kΩ | 4.4V | 10μA |
| Third resistance state | 1.7MΩ | 4.4V | 1μA |
| 4th resistance state | 100MΩ | -0.7V | —— |
Optionally, the resistive element can refer to resistance-variable storing device (resitive switching random access
Memory, RRAM) principle be designed.Wherein, the making material of the metallic substrates 21 can be Al, Cu, Ti or Mo, thickness
It is aboutThe making material of the insulating layer 22 can be silica, and thickness is aboutThe metal electrode 23
Making material can be Al, Cu, Ti or Mo, thickness is aboutAnd the metal electrode 23 is when being cylindrical, it is straight
Diameter is aboutOf course, it will be appreciated that best thicknesses of layers/material can be tested according to actual product demand,
Thickness, material etc. to be more suitable for, without its specification to be limited to parameter cited in the embodiment of the present invention.
As an embodiment of the present invention, the data storage circuitry, including at least one storage unit；The storage
Unit includes at least one thin film transistor (TFT) T (N-type, p-type) and at least one described resistive element R, as shown in Fig. 2, institute
Drain electrode (Drain) the series connection resistive element R for stating thin film transistor (TFT) T, so that the resistive element R is in the thin film transistor (TFT)
Data write-in is completed under the switch control of T and/or is read.
As an embodiment of the present invention, the thin film transistor (TFT) T includes gate insulation layer (GI) and source-drain electrode (SD), institute
Stating resistive element R includes metallic substrates, insulating layer and metal electrode；The gate insulation layer and the insulating layer of the resistive element are
Same layer, film layer and the metal electrode where the source-drain electrode are same layer or are same layer with the metallic substrates.This
Sample enables the part hierarchical structure of the thin film transistor (TFT) T and the part hierarchical structure of the resistive element R to make simultaneously
Make, so as to save manufacturing process, raising efficiency；Meanwhile the improvement for also being done the embodiment of the present invention is not to display device
Process for integrally manufacturing generate large effect.
Optionally, same layer manufacture craft above-mentioned, the mask plate (Mask) that can be directed to the display device of certain model are saturating
Light area is adjusted, to realize same layer production by a patterning processes；Wherein, metal material Mo, Al, Ti etc. can be existing
Have existing target in display device manufacture craft, replacement metal targets can be increased if necessary, including be not limited to Cu, Ag,
Pt etc..
As an embodiment of the present invention, as shown in figure 3, the storage unit 10 include first film transistor T1,
Second thin film transistor (TFT) T2, the first resistive element R1 and the second resistive element R2；The control electrode of the first film transistor T1
The first signal wire D1, the control electrode of the second thin film transistor (TFT) T2 and are all connected with the first pole of the second thin film transistor (TFT) T2
The first pole of one thin film transistor (TFT) T1 is all connected with second signal line G2, described in the second pole connection of the first film transistor T1
The first end of first resistive element R1, the second pole of the second thin film transistor (TFT) T2 connect the of the second resistive element R2
One end, the second end of the first resistive element R1 connect third signal wire GND with the second end of the second resistive element R2.
The first film transistor T1 and the first resistive element R1 that can be seen that in the storage unit in the present embodiment are one
Group, the second thin film transistor (TFT) T2 and the second resistive element R2 are one group；When the first signal wire D1 inputs open signal, first is thin
Film transistor T1 is opened, and the set signal of second signal line G1 input simultaneously or reset signal are defeated through first film transistor T1
Enter to the first resistive element R1, to change its resistance value；When second signal line G1 inputs open signal, the second film crystal
Pipe T2 is opened, and the set signal of the first signal wire D1 input simultaneously or reset signal are input to the through the second thin film transistor (TFT) T2
Two resistive element R2, to change its resistance value.
Since each resistive element is there are 4 resistance states, 4 resistance states of two resistive elements can be obtained by permutation and combination
The group of different order amounts to 16 kinds, so that a storage unit can recorde the character (as shown in table 2) of 16 systems.It does so
It is advantageous in that, is that can be realized the storage unit of 16 systems in this way using 10 systems usually when recording production information, it can
Meet the needs of 10 binary datas of record.Meanwhile using this structure, enable the first signal wire D1 and second signal line G1
It is multiplexed by two resistive elements, to save pin.
The character of the corresponding storage of 2 storage unit of table
As an embodiment of the present invention, the data storage circuitry, the array of the storage unit 11 including N row M column；
Wherein, the first pole of the control electrode of the first film transistor of same array storage unit and the second thin film transistor (TFT) is all connected with same
Signal line, the control electrode of the second thin film transistor (TFT) of same line storage unit and the first pole of first film transistor are all connected with
The second end of same signal line, the first resistive element of same row is all connected with same signal line, with second resistive of a line
The second end of unit is all connected with same signal line.Circuit design in this way can be realized whole using timesharing driving method
Data write-in/reading of a data storage circuitry, moreover it is possible to while saving pin number.Wherein, the second end of the resistive element
It is grounded, in practical application, same GND signal wire can also be connect.
For example, data storage circuitry as shown in Figure 4, including 4 rows 4 column totally 4 × 4 storage units, each D signal wire with
A storage unit, the interspersed ground terminal for wherein connecing resistive element of GND signal wire is arranged in the intersection of G-signal line.In this way, due to
One storage unit 11 can be realized the character code of 16 systems, and 4 × 4 checkerboard type data storage circuitries can then form 16
Hexadecimal string can satisfy the data storage requirement on basis.Certainly, according to actual needs, D/G signal can also be increased
The quantity of line is to improve the character quantity of storage, such as ranks relationship is 5 × 5,5 × 6,6 × 6 etc..
It is open signal that Fig. 5 a, which show G-signal line, and D signal wire is the data write driver waveform diagram of input signal (with N
For transistor npn npn)；It is open signal that Fig. 5 b, which show D signal wire, and G-signal line is the data write driver waveform of input signal
Scheme (by taking N-type transistor as an example).Using timesharing driving method, then each resistive element in data storage circuitry can be achieved and set
Position.It should be noted that the resistance due to resistive element is related to the limitation size of electric current wherein inputted, according to right
The resistance value (corresponding storing data character) stored needed for the resistive element answered, the electric current in set is different.For electric current
Input value, may rely on external signal input device and set, shape can be guaranteed by inputting when input set voltage
At limitation electric current needed for respective resistivity values.It should be noted that Fig. 5 a and Fig. 5 b be set is both needed to each resistive element and
The waveform diagram of offer, and if some resistive elements when needing to be set to four resistance states, then need using resetting voltage (-
0.7V) it is handled.
It is open signal that Fig. 5 c, which show G-signal line, and D signal wire is the reset wave figure of reset signal (with N-type transistor
For)；It is open signal that Fig. 5 d, which show D signal wire, and G-signal line is that the reset wave figure of reset signal (is with N-type transistor
Example).Here, the effect of reset is, the data having been written into can be wiped, so that new signal is written, so that institute
Stating data storage circuitry can be recycled.
The second aspect of the embodiment of the present invention provides a kind of array substrate, is able to solve existing production information and sets
Set problem that is difficult or reading difficulty.
The array substrate, any embodiment including data storage circuitry as previously described, the data storage circuitry are used
In storage production information relevant to array substrate.
Array substrate provided by the embodiment of the present invention, by setting resistive element and using it after different electric current set
It is capable of forming the characteristic of different resistance values, using the resistive element as the device of storing data, so that for storing data
Data storage circuitry, can in subsequently through reading circuit the resistance value of resistive element and be converted to its number stored
According to without going acquisition storing data by way of physical identification (such as laser scanning).In this way, passing through specially designed data
Storage circuit stores/information is read, optics two dimensional code employed in the prior art can not be used, avoids causing in production
Two dimensional code it is bad, while without additionally reserving exposed space for two dimensional code, and then the narrow frame of display device may be implemented
Change.Particularly, flip chip (Chip On Film, COF) technology can also be cooperated to realize Rimless.
As an embodiment of the present invention, any sky in the array substrate can be set in the data storage circuitry
Not busy position.Two dimensional code in compared to the prior art needs to be exposed to outer characteristic, and the data in the embodiment of the present invention store electricity
Any clear position in the array substrate can be set (as long as being enough to put down the data storage circuitry and set convenient for it in road
Set corresponding cabling), so that the size of array substrate will not be increased, moreover it is possible to array substrate be made to realize narrow frame.
Usual liquid crystal display device needs array substrate and color membrane substrates to forming liquid crystal cell after box in production, and institute
Stating color membrane substrates includes the first light shield layer and color blocking (including tri- color of RGB), first light shield layer (usually black matrix layer BM)
For blocking except by other light in addition to the color blocking, to prevent generating light mixing between leak-stopping light and adjacent color blocking.Therefore, compared with
Good, after the array substrate and color membrane substrates are to box, the data storage circuitry is located at the positive throwing of first light shield layer
In shadow, thus in finally formed liquid crystal display device, without being deposited using additional material to the data for beauty
Storage road is blocked, and the effect blocked to the data storage circuitry can be completed in first light shield layer.Meanwhile by
In without additionally blocking, when the data storage circuitry is arranged, the aperture opening ratio of liquid crystal display device will not be had an impact.
Optionally, as shown in fig. 6, the close fanout area side of the array substrate is arranged in the data storage circuitry
Any corner (upper left corner or the upper right corner of array substrate in Fig. 6), meanwhile, as shown in fig. 6, the data storage circuitry
10 lead can be connected to the driving chip (IC) or flexible circuit board of display device by the fanout area 30 of array substrate
The binding pin (Bonding Pin) of (Flexible Printed Circuit Board, FPC), to utilize display device
External circuit structure realize corresponding data write-in/reading.
As an embodiment of the present invention, the array substrate includes the second shading for being blocked to backlight
Layer and thin film transistor (TFT) array, second light shield layer (usually LS) are used to block the light from the array substrate back surface incident
Line (the usually light of the backlight incidence of liquid crystal display device), to prevent it from irradiating having in the thin film transistor (TFT) array
Active layer (because active layer can generate photo-generated carrier after being irradiated by light, will affect the workability of thin film transistor (TFT) itself
Can), the resistive element includes metallic substrates；The metallic substrates and second light shield layer are same layer.Optionally, described
Second light shield layer is the first layer film layer being arranged in the substrate (substrate) of array substrate, is mainly used for carrying out backlight
It blocks, to play the role of preventing active layer from being irradiated by light, generallys use Mo production, at this point, by direct in substrate
One layer of Mo metal layer is formed, and subsequent the insulating layer of resistive element and metal electrode are successively produced on the second light shield layer
The metallic substrates that resistive element is formed while forming the second light shield layer, further save technique.
In terms of the third of the embodiment of the present invention, a kind of display device is provided, existing production information is able to solve and sets
Set problem that is difficult or reading difficulty.
The display device, any embodiment including array substrate as previously described.
It should be noted that display device in the present embodiment can be with are as follows: Electronic Paper, mobile phone, tablet computer, television set,
Any products or components having a display function such as laptop, Digital Frame, navigator.
Display device provided by the embodiment of the present invention, by setting resistive element and using it after different electric current set
It is capable of forming the characteristic of different resistance values, using the resistive element as the device of storing data, so that for storing data
Data storage circuitry, can in subsequently through reading circuit the resistance value of resistive element and be converted to its number stored
According to without going acquisition storing data by way of physical identification (such as laser scanning).In this way, passing through specially designed data
Storage circuit stores/information is read, optics two dimensional code employed in the prior art can not be used, avoids causing in production
Two dimensional code it is bad, while without additionally reserving exposed space for two dimensional code, and then the narrow frame of display device may be implemented
Change.
4th aspect of the embodiment of the present invention, provides a kind of method for writing data of data storage circuitry, can solve
Certainly existing production information setting is difficult or reads difficult problem.
As shown in fig. 7, the method for writing data of any embodiment of aforementioned data storage circuit, comprising:
Step 41: obtaining data to be stored；Optionally, the data to be stored can be the character including multiple characters
String；
Step 42: analyzing the data to be stored, and be converted into the resistance value of corresponding resistive element；
Optionally, the step 42 may particularly include: according to character each in the data to be stored and resistive element
The character is converted to the resistance value of corresponding resistive element by resistance value corresponding relationship；
Step 43: the set current of corresponding resistive element is determined according to the resistance value, and should to resistive element input
Set current completes set, to complete the storage of data to be stored.
Optionally, it for information [1 21111111111111 F] is written, then needs successively in phase
Be written corresponding character in the storage unit answered, and there are corresponding relationships for the resistance states of two resistive elements in character and storage unit
(can refer to table 2), at set (voltage 4.4V), to the corresponding limitation electric current of resistive element input of corresponding resistance state
The resistance value of corresponding resistive element is configured, to complete the write-in of information needed.
For example, it is desired to be hindered at this time by the limitation current control of resistive element 1 in 1mA when being written 1 with reference to Tables 1 and 2
Become unit 1 and is set to the first resistance state (250 Ω), then by the limitation current control of resistive element 2 in 10 μ A, resistive element at this time
2 are set to the second resistance state (19k Ω), so that the storage unit is stored as character 1.Similarly, with reference to Tables 1 and 2, by resistive list
For the limitation current control of member 1 in 1mA, resistive element 1 is set to the first resistance state (250 Ω) at this time, then by resistive element 2
Current control is limited in 1 μ A, resistive element 2 is set to third resistance state (1.7M Ω) at this time, so that the storage unit is stored as
Character 2.Similarly, with reference to Tables 1 and 2, when the set voltage of resistive element 1 is changed to the resetting voltage of -0.7V, resistive list at this time
Member 1 is reset to the 4th resistance state (100M Ω), then the set voltage of resistive element 2 is changed to the resetting voltage of -0.7V, at this time
Resistive element 2 is also reset to the 4th resistance state (100M Ω), so that the storage unit is stored as character F.Other need to be written
The storage unit of character 1 can be realized referring to the method for write-in character 1 above-mentioned, and details are not described herein.
Information write-in for display panel (Cell), can carry out after the manufacture craft of array substrate；It is original
Device fabrication (Original Equipment Manufacturer, OEM) factory can be laggard in cutting technique (Cutting)
The write-in of the production information of the reading or current process of the production information of the previous process of row, is tied to glass in flexible circuit board
Substrate (FPC On Glass, FOG, be equivalent to the intermediate process of module group procedure)~final inspection (Final inspection,
FI is equivalent to the end process of module group procedure) position (FPC/IC that is designed according to data storage circuitry of the product of state
Bonding pin) the corresponding reading coding of design.
Optionally, the write-in of the storage information of the data storage circuitry can pass through the electrical parameter performance in producing line
(Electrical Parameter Monitor, EPM) detection device is realized, when D signal wire inputs open signal, G letter
Corresponding data can be written in number line, and when G-signal line inputs open signal, corresponding data can be written in D signal wire.
The resistance value of the resistive element after write, can also be repeated erasable with permanent retention.
5th aspect of the embodiment of the present invention, provides a kind of method for reading data of data storage circuitry, can solve
Certainly existing production information setting is difficult or reads difficult problem.
As shown in figure 8, the method for reading data of the data storage circuitry, comprising:
Step 51: reading the resistance value of resistive element；
Step 52: according to the corresponding relationship of resistance value and storing data, the resistance value being converted into storing data；
Optionally, the step 52 may particularly include: according to the corresponding relationship of resistance value and character, the resistance value being turned
It is changed to character, each character is formed into storing data in order.
When reading information, the resistance value for reading the resistive element 1 in storage unit is 250 Ω, the resistance value of resistive element 2
For 19k Ω, then character 1 is converted to；The resistance value for reading the resistive element 1 in storage unit is 250 Ω, the electricity of resistive element 2
Resistance value is 1.7M Ω, then is converted to character 2；Similarly, the resistance value for reading the resistive element 1 in storage unit is 100M Ω, resistance
Become the resistance value of unit 2 as 100M Ω, is then converted to character F.Thus the letter that each storage unit is stored can be obtained in mode
Breath, and then obtain the production information that data storage circuitry is stored.
Optionally, the reading of the storage information of the data storage circuitry can pass through the electrical parameter performance in producing line
(Electrical Parameter Monitor, EPM) detection device is realized, when D signal wire inputs open signal, G letter
Number line can read corresponding data, and when G-signal line inputs open signal, D signal wire can also read corresponding data.It can
Choosing, after the product formation display module state of production, the resistance value in reading circuit can be cooperated by IC.
The transistor used in all embodiments of the invention all can be thin film transistor (TFT) or field-effect tube or other characteristics
Identical device.In embodiments of the present invention, the two poles of the earth for differentiation transistor in addition to grid, wherein will be known as source electrode in a pole,
Another pole is known as draining.In addition, transistor can be divided into N-type transistor or P-type transistor by the characteristic differentiation according to transistor.
In driving circuit provided in an embodiment of the present invention, all transistors are illustrated by taking N-type transistor as an example, it is contemplated that
Be using P-type transistor realize when be that those skilled in the art can readily occur in without creative efforts
, therefore be also in the embodiment of the present invention protection scope.
In embodiments of the present invention, for N-type transistor, the first extremely source electrode, second extremely drains, for P-type crystal
Pipe, first extremely drains, the second extremely source electrode.
It should be understood by those ordinary skilled in the art that: the above is only a specific embodiment of the present invention, and
It is not used in the limitation present invention, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done,
It should be included within protection scope of the present invention.
Claims (12)
1. a kind of data storage circuitry, which is characterized in that including at least one resistive element；In the set by different electric currents
Cheng Hou, the resistive element are capable of forming different resistance values to be stored as data.
2. circuit according to claim 1, which is characterized in that including at least one storage unit；The storage unit packet
Include at least one thin film transistor (TFT) and at least one described resistive element；Switch of the resistive element in the thin film transistor (TFT)
Control is lower to be completed data write-in and/or reads.
3. circuit according to claim 2, which is characterized in that the storage unit includes first film transistor, second
Thin film transistor (TFT), the first resistive element and the second resistive element；The control electrode of the first film transistor and the second film are brilliant
First pole of body pipe is all connected with the first signal wire, and the first of the control electrode of second thin film transistor (TFT) and first film transistor
Pole is all connected with second signal line, and the second pole of the first film transistor connects the first end of first resistive element, institute
The second pole for stating the second thin film transistor (TFT) connects the first end of second resistive element, the second end of first resistive element
Third signal wire is all connected with the second end of second resistive element.
4. circuit according to claim 3, which is characterized in that the memory cell array including N row M column；Wherein, same row
First pole of the control electrode of the first film transistor of storage unit and the second thin film transistor (TFT) is all connected with same signal line, together
The control electrode of second thin film transistor (TFT) of one line storage unit and the first pole of first film transistor are all connected with same bars
The second end of line, the first resistive element of same row is all connected with same signal line, with the second of second resistive element of a line
End is all connected with same signal line.
5. circuit according to claim 2, which is characterized in that the thin film transistor (TFT) includes gate insulation layer and source-drain electrode,
The resistive element includes metallic substrates, insulating layer and metal electrode；The insulating layer of the gate insulation layer and the resistive element
For same layer, film layer and the metal electrode where the source-drain electrode are same layer or are same layer with the metallic substrates.
6. circuit according to claim 1, which is characterized in that the resistive element includes metallic substrates, insulating layer and gold
Belong to electrode；The making material of the metallic substrates is Al, Cu, Ti or Mo, and the making material of the insulating layer is silica, described
The making material of metal electrode is Al, Cu, Ti or Mo.
7. a kind of array substrate, which is characterized in that described including data storage circuitry as claimed in any one of claims 1 to 6
Data storage circuitry is used to store the production information of the array substrate.
8. array substrate according to claim 7, which is characterized in that the array substrate is used for color membrane substrates to box-like
At liquid crystal cell, the color membrane substrates include the first light shield layer and color blocking, and first light shield layer is for blocking except by the color
Other light except resistance；After the array substrate and color membrane substrates are to box, the data storage circuitry is located at described first
In the orthographic projection of light shield layer.
9. array substrate according to claim 7, which is characterized in that the array substrate includes the second light shield layer and film
Transistor array, second light shield layer are used to block the light from the array substrate back surface incident, to prevent it from irradiating institute
State the active layer in thin film transistor (TFT) array；The resistive element includes metallic substrates；The metallic substrates and described second hide
Photosphere is same layer.
10. a kind of display device, which is characterized in that including such as described in any item array substrates of claim 7-9.
11. a kind of method for writing data of data storage circuitry as claimed in any one of claims 1 to 6, which is characterized in that packet
It includes:
Obtain data to be stored；
The data to be stored is analyzed, and is converted into the resistance value of corresponding resistive element；
The set current of corresponding resistive element is determined according to the resistance value, and the set current is inputted to the resistive element and is completed
Set.
12. a kind of method for reading data of data storage circuitry as claimed in any one of claims 1 to 6, which is characterized in that packet
It includes:
Read the resistance value of resistive element；
According to the corresponding relationship of resistance value and storing data, the resistance value is converted into storing data.
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| CN201811123121.XA CN109300499B (en) | 2018-09-26 | 2018-09-26 | Data storage circuit, data reading and writing method, array substrate and display device |
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| CN201811123121.XA CN109300499B (en) | 2018-09-26 | 2018-09-26 | Data storage circuit, data reading and writing method, array substrate and display device |
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| CN109300499B CN109300499B (en) | 2021-08-24 |
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Cited By (1)
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| CN110109308A (en) * | 2019-05-06 | 2019-08-09 | 合肥京东方光电科技有限公司 | A kind of display panel, its driving method and display device |
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