CN109285941B - Induction type superconducting edge detector and preparation method thereof - Google Patents

Abstract

The invention relates to an induction type superconducting edge detector and a manufacturing method thereof, wherein the induction type superconducting edge detector comprises: the method comprises the following steps: the device comprises a substrate, an absorption layer, a dielectric layer, an insulating layer, a superconducting thin film layer and a Josephson bridge junction; the absorption layer is arranged on one surface of the substrate; the dielectric layer is arranged on the surface of the absorption layer far away from the substrate and has permeability; the insulating layer covers the absorption layer and the dielectric layer; the superconducting thin film layer is arranged on the surface, far away from the substrate, of the insulating layer and is arranged around the absorption layer and the dielectric layer in a continuous closed structure; the Josephson bridge junction is disposed on the superconducting thin film layer. The induction type superconducting edge detector comprises a dielectric layer with an anti-reflection effect on photons, and the absorption efficiency of the induction type superconducting edge detector on the single photons is improved.

Description

Inductive superconducting edge detector and preparation method thereof

technical field

The invention belongs to the technical field of superconducting electronic information, in particular to an inductive superconducting edge detector and a preparation method thereof.

Background technique

The measurement of fundamental physical quantities of individual particles requires extremely sensitive detectors. Superconducting transition edge sensors (TES for short) is one such detector, which is composed of superconducting thin films and operates at a very narrow range between its superconducting state and its normal state, that is, superconducting Conductivity is between zero and normal.

Since Andrews proposed superconducting transition edge detectors in 1949, superconducting transition edge detectors have come a long way. Compared with normal temperature semiconductor single-photon detectors, such as avalanche diodes or photomultiplier tubes, superconducting transition edge detectors have the advantages of fast response speed and low detection energy.

The superconducting transition edge detector is a very sensitive detection instrument. The traditional superconducting transition edge detector has weak absorption of photons, and the influence of the observation environment makes the superconducting transition edge detector ineffective and inaccurate.

SUMMARY OF THE INVENTION

Based on this, it is necessary to provide an inductive superconducting edge detector capable of enhancing photon absorption and a preparation method thereof for the above problems.

An inductive superconducting edge detector includes:

substrate;

an absorption layer, disposed on one surface of the substrate;

a dielectric layer, disposed on the surface of the absorption layer away from the substrate, and the dielectric layer has anti-reflection properties;

an insulating layer, arranged to cover the absorption layer and the dielectric layer;

a superconducting thin film layer, arranged on the surface of the insulating layer away from the substrate, and arranged around the absorption layer and the dielectric layer in a continuous closed structure;

A Josephson bridge junction is arranged on the superconducting thin film layer.

In one embodiment, the absorption layer is a niobium silicon thin film or a pure niobium thin film, and the superconducting thin film layer is a pure niobium thin film.

In one embodiment, in the niobium-silicon film, the proportion of the niobium in the niobium-silicon film is greater than or equal to 81.5% and less than or equal to 97.1%, and the superconducting transition temperature of the niobium-silicon film is 3.85 Between K and 7.1K.

In one of the embodiments, the superconducting transition temperatures of the absorber layer and the superconducting thin film layer are different.

The present invention also provides a method for manufacturing an inductive superconducting edge detector, the manufacturing method comprising:

A substrate is provided, and an absorption layer is grown on the substrate, and the absorption layer is a niobium-silicon film or a pure niobium film;

A dielectric layer is deposited on the surface of the absorption layer, and the dielectric layer has an antireflection effect on incident single photons;

A patterned first photoresist layer is formed on the surface of the dielectric layer to cover the absorption layer in the first preset area;

performing a first etching, etching off the absorption layer and the dielectric layer outside the first preset area, and exposing the substrate;

removing the photoresist, depositing to form an insulating layer, covering the substrate and the outer surfaces of the absorption layer and the dielectric layer;

A superconducting thin film layer is grown on the surface of the insulating layer, and the superconducting thin film layer is a pure niobium thin film;

On the superconducting thin film layer, a patterned second photoresist layer is formed to cover the second preset area, and the second preset area is an annular continuous area around the absorption layer and the dielectric layer;

Perform a second etching, etch away the superconducting thin film layer outside the second preset area, and obtain a closed-loop superconducting structure that continuously surrounds the absorption layer, the dielectric layer and the part on the surface of the substrate the periphery of the insulating layer;

On the closed loop superconducting structure, exposure produces a Josephson bridge junction.

In one embodiment, the performing the first etching to remove the absorber layer and the dielectric layer outside the first preset area, and exposing the substrate includes:

A fluorine-based plasma is used to perform the first etching, and the absorption layer outside the first preset area is etched away to expose the substrate.

In one embodiment, the steps of removing the photoresist, depositing to form an insulating layer, and covering the substrate and the outer surfaces of the absorption layer and the dielectric layer include:

The structure after the first etching is subjected to a degumming treatment with a cleaning agent;

On the surface of the structure after degumming, an insulating layer with a thickness of 5-10 nm is deposited by atomic layer deposition (ALD).

In one embodiment, during the second etching, the superconducting thin film layer outside the second preset area is etched away, so as to obtain the closed loop superconducting structure that is continuous on the surface of the substrate In the step of surrounding the periphery of the absorption layer, the dielectric layer and part of the insulating layer, the time for the second etching is longer than the predetermined time required for etching the pure niobium thin film.

In one embodiment, the step of exposing and fabricating a Josephson bridge junction on the closed-loop superconducting structure includes:

On the ring-shaped superconducting structure, a Josephson bridge junction is directly fabricated by a focused ion beam (FIB) or a pattern is fabricated by an electron beam exposure (EBL) and then a Josephson bridge junction is fabricated by dry etching.

In one embodiment, the preparation method of the niobium silicon thin film includes:

providing a magnetron co-sputtering chamber and a niobium target and a silicon target disposed in the magnetron co-sputtering chamber;

Control the vacuum degree of the magnetron sputtering chamber and the niobium target and the silicon target to perform magnetron sputtering with a predetermined sputtering gas pressure and a predetermined sputtering power for a predetermined sputtering time, and depositing a shape on the surface of the substrate as follows the absorption layer or the superconducting thin film layer,

Wherein, the proportion of niobium in the absorption layer is greater than or equal to 81.5% and less than or equal to 97.1%, and the superconducting transition temperature of the absorption layer is between 3.85K and 7.1K.

The invention provides an inductive superconducting edge detector and a manufacturing method thereof. The inductive superconducting edge detector includes a medium layer with anti-reflection effect on photons, which improves the accuracy of the inductive superconducting edge detector. Single photon absorption efficiency.

Description of drawings

1 is a top view of the structure of an inductive superconducting edge detector according to an embodiment of the present invention;

Fig. 2 is the section of the AB line position in Fig. 1;

3 is a process flow diagram of a method for fabricating an inductive superconducting edge detector according to an embodiment of the present invention.

Description of main component symbols

Inductive superconducting edge detectors 10

Substrate 100

Absorbent layer 200

Dielectric Layer 300

Insulation layer 400

Superconducting thin film layer 500

Josephson Bridge Junction 600

first photoresist layer 110

second photoresist layer 120

Detailed ways

In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

1 and 2, the present invention provides an inductive superconducting edge detector 10, including: a substrate 100, an absorption layer 200, a dielectric layer 300, an insulating layer 400, a superconducting thin film layer 500 and a Josephson bridge junction 600; the absorption layer 200 is disposed on one surface of the substrate 100; the dielectric layer 300 is disposed on the surface of the absorption layer 200 away from the substrate 100, and the dielectric layer 300 has anti-reflection properties; The insulating layer 400 is arranged to cover the absorption layer 200 and the dielectric layer 300; the superconducting thin film layer 500 is arranged on the surface of the insulating layer 400 away from the substrate, and surrounds the absorption layer 200 in a continuous closed structure and the dielectric layer 300 are arranged; the Josephson bridge junction 600 is arranged on the superconducting thin film layer 500 .

The material of the substrate 100 may be silicon, magnesium silicide, magnesium oxide, or the like. The absorption layer 200 is disposed between the dielectric layer 300 and the substrate 100 , preferably the absorption layer 200 and the dielectric layer 300 are flush. The dielectric layer 300 may be silicon dioxide, silicon nitride, or a specially designed structure thereof. The substrate 100 is a substrate with an oxide layer. The absorption layer 200 and the superconducting thin film layer 500 are made of superconducting material. Known superconducting materials include niobium, niobium nitride, and niobium-silicon mixed materials. The closed structure may be annular, closed rectangular, or the like. In addition, the superconducting thin film layer 500 of the closed structure may also include two superconducting thin films at both ends of the superconducting thin film layer to form a connection line for passing a bias current. If the bias current is a direct current, there are at least two Josephson bridge junctions 600 , a double-junction superconducting loop formed by connecting the superconducting thin film layers in parallel. If the bias current is a radio frequency current, the number of the Josephson bridge junction 600 may be one.

The inductive superconducting edge detector 10 provided in this embodiment includes a dielectric layer 300 having an antireflection effect on photons, which improves the absorption efficiency of the inductive superconducting edge detector 10 for single photons.

In one embodiment, the absorption layer 200 is a niobium silicon thin film or a pure niobium thin film, and the superconducting thin film layer 500 is a pure niobium thin film. In one embodiment, the superconducting transition temperatures of the absorption layer 200 and the superconducting thin film layer 500 have different superconducting transition temperatures.

In one embodiment, the absorber layer 200 is a niobium silicon thin film. In the niobium-silicon film, the proportion of the niobium in the niobium-silicon film is greater than or equal to 81.5% and less than or equal to 97.1%, so that the superconducting transition temperature of the niobium-silicon film is between 3.85K and 7.1K . In the past, the superconducting transition temperature of the superconducting thin film layer can also be adjusted by adjusting the thickness of the pure niobium thin film. In fact, the superconducting transition temperature is 0.4K when the thickness of pure niobium film is 1nm. When the thickness of pure niobium superconducting thin film is 5nm, the superconducting transition temperature is 5.9K. Therefore, a slight change in the thickness of the pure niobium superconducting film has a great influence on the superconducting transition temperature, and it is difficult to guarantee the uniformity of such a thin superconducting film. The niobium-silicon film used in this embodiment includes niobium and silicon components. By adjusting the proportion of niobium in the niobium-silicon film, a superconducting film layer with a superconducting transition temperature between 3.85K and 7.1K can be obtained. The thickness of the niobium-silicon thin film can be 20 nm to 70 nm, and the uniformity can be easily guaranteed in the preparation process of this thickness range.

When the DC inductive superconducting edge detector with two Josephson bridge junctions is applied, the closed superconducting thin film layer 500 and the double junction superconducting ring formed by the two Josephson bridge junctions are supplied with direct current Bias current, when the bias current is greater than the maximum critical current of the double junction superconducting loop, a voltage is generated across the double junction superconducting loop, and this voltage value is induced by the double junction superconducting loop The magnetic flux exhibits periodic changes. Therefore, after the absorption layer 200 and the dielectric layer 300 absorb photons, the magnetic flux in the double-junction superconducting ring changes, and the change can be reflected by the periodic change of the voltage value.

Referring to FIG. 3, the present invention also provides a method for manufacturing an inductive superconducting edge detector 10, including:

S100, a substrate 100 is provided, and an absorber layer 200 is grown on the substrate 100, and the absorber layer 200 is a niobium silicon film or a pure niobium film.

The material used for the substrate 100 may be silicon, magnesium silicide, magnesium oxide, or the like. An absorber layer 200 is grown on the substrate 100 . The magnetron sputtering method may be direct current sputtering, alternating current sputtering, radio frequency magnetron sputtering, reactive sputtering, ion beam sputtering and the like. The absorber layer can also be other superconducting materials, such as pure niobium, niobium nitride and the like. Preferably, the absorber layer 200 is grown on one surface of the substrate 100 and is flush with the surface.

S200 , depositing a dielectric layer 300 on the surface of the absorption layer 200 , and the dielectric layer 300 has an antireflection effect on incident single photons.

The dielectric layer 300 may be silicon dioxide, silicon nitride, or a specially designed structure thereof. The surface deposition may be physical vapor deposition. Preferably, the dielectric layer 300 is deposited on the corresponding surface of the contact surface between the absorption layer 200 and the substrate 100 and is flush with the corresponding surface.

S300 , a patterned first photoresist layer 110 is formed on the surface of the dielectric layer 300 to cover the absorption layer 200 in the first predetermined area.

Photoresists are organic compounds that are sensitive to light. It is insoluble to the developer before exposure and soluble after exposure, so that specific areas are protected by exposure. Preferably, the first photoresist layer 110 covers the corresponding surface of the contact surface between the dielectric layer 300 and the absorption layer 200, and covers a central part of the corresponding surface.

S400 , performing a first etching, etching off the absorption layer 200 and the dielectric layer 300 outside the first preset area, and exposing the substrate 100 .

The etching may be dry etching or wet etching. Preferably, the etching is plasma etching of dry etching.

In one embodiment, a fluorine-based plasma is used to perform the first etching, and the absorption layer 200 and the dielectric layer 300 outside the first predetermined region are etched away to expose the substrate 100 .

The plasma used for etching is generally gaseous. The fluorine-based plasma may be a fluorocarbon plasma. In the etching process, oxygen plasma, nitrogen plasma, etc. can also be used according to different purposes and functions. Preferably, the final etched structure is that the center of the surface of the substrate 100 is covered by the absorption layer 200 , the dielectric layer 300 and the first photoresist layer 110 , and the center of the surface of the substrate 100 is covered by the The absorption layer 200 , the dielectric layer 300 and the first photoresist layer 110 are flush.

S500 , removing the remaining first photoresist layer, and depositing to form an insulating layer 400 covering the absorption layer 200 and the dielectric layer 300 .

In one embodiment, the structure after the first etching is subjected to a degumming treatment with a cleaning agent.

In one embodiment, an insulating layer with a thickness of one atom is deposited on the surface of the debonded structure by using an atomic layer deposition (ALD) technique.

Atomic layer deposition is a method in which substances can be deposited layer by layer on the surface of a substrate in the form of a single atomic film. Atomic layer deposition is similar to ordinary chemical deposition. But in atomic layer deposition, the chemical reaction of a new layer of atoms is directly linked to the previous layer, in such a way that only one layer of atoms is deposited at each reaction. Atomic layer deposition (ALD) technique is used to deposit an insulating layer with a thickness of 5-10 nm. Preferably, the insulating layer 400 covers the exposed surface area of the substrate 100 in contact with the absorption layer 200 and completely covers the surfaces of the absorption layer 200 and the dielectric layer. The insulating layer 400 made by atomic layer deposition (ALD) may be silicon oxide or hafnium oxide. The insulating layer 400 ensures insulation between the absorbing layer 200 and the superconducting thin film layer 500 , so that the surface area of the absorbing layer 200 can be maximized, that is, the outer diameter of the absorbing layer 200 is close to the inner diameter of the superconducting thin film layer 500 , which helps to improve the detection efficiency of the inductive superconducting edge detector.

S600, growing a superconducting thin film layer 500 on the surface of the insulating layer 400, where the superconducting thin film layer is a niobium thin film.

The magnetron sputtering method may be direct current sputtering, alternating current sputtering, radio frequency magnetron sputtering, reactive sputtering, ion beam sputtering and the like. The superconducting thin film layer can be other superconducting materials, such as pure niobium, niobium nitride and the like. Preferably, the superconducting thin film layer 500 is grown on the surface of the insulating layer 400 and is flush with the sides of the surface of the insulating layer 400 .

S700, on the superconducting thin film layer 500, a patterned second photoresist layer 120 is formed to cover the second preset area, and the second preset area is disposed on the absorption layer 200 and the medium The layer 300 has a closed continuous area on the periphery.

S800 , perform a second etching, etch away the superconducting thin film layer 500 outside the second preset area, and obtain a closed-loop superconducting structure that continuously surrounds the absorption layer and the medium on the surface of the substrate layer and part of the periphery of the insulating layer.

In one embodiment, in the step of performing the second etching to etch out the second preset structure, the time for performing the second etching is longer than the predetermined time required for etching the niobium thin film.

The time for the second etching should actually be longer than the predetermined time required for etching the niobium thin film. The etching rate of the niobium thin film is about 10 times that of the dielectric layer 300 . If the etching time exceeds the predetermined time required to etch the niobium thin film, the dielectric layer on the first exposed absorber layer will be thinned, and the etching depth of the dielectric layer will not affect the light transmission performance, while the underlying dielectric layer will be thinned. The absorber layer will not be etched. Preferably, the specific structure formed after the second etching is as follows: the absorption layer 200 is located in the center of the surface of the substrate 100 , and the superconducting thin film layer 500 is closed, which may be annular or rectangular, etc. The structure surrounds the periphery of the absorption layer 200 . And an insulating layer 400 is provided between the superconducting thin film layer 500 and the substrate, and between the superconducting thin film layer 500 and the absorption layer 200 and the dielectric layer 300 .

Since the absorption layer 200 needs an anti-reflection film, the etching rate of these materials is very low in the process of etching niobium. After the absorption layer 200 is fabricated, the dielectric layer 300 is fabricated, and finally the superconducting thin film layer 500 is deposited. The layer 400 is equivalent to adding an etch stop layer between the absorber layer 200 and the superconducting thin film layer 500 . After the etching of the preset structure is completed, the absorption layer 200 will not be further etched, which ensures the stability and repeatability of the device performance. The insulating layer 400 is for preventing the superconducting connection between the absorber layer and the superconducting thin film layer 500 .

S900 , exposing the closed-loop superconducting structure to form a Josephson bridge junction 600 .

In one of the embodiments, on the annular superconducting structure, the Josephson bridge junction 600 is directly fabricated by using focused ion beam (FIB); or the pattern is fabricated by electron beam exposure (EBL), and then dry etching is used Make Josephson Bridge Knot 600.

Specifically, on the annular superconducting structure, two Josephson bridge junctions 600 are fabricated by using a focused ion beam (FIB). Focused ion beam is a precise micro-machining method, with very high machining accuracy, the thinnest line that can be processed is tens of nanometers. This is mainly because the energy transfer efficiency of ions in solid materials is much higher than that of electrons. Commonly used electron beam exposure resists are more than 100 times more sensitive to ions than to electron beams. In addition to the high precision, another advantage of ion beam exposure is that there are virtually no proximity effects. Since the mass of the ion itself is much greater than that of the electron, the scattering range of the ion in the resist is much smaller than that of the electron, and there is almost no backscattering effect.

In one embodiment, after the step S700 is completed, the second recording resin is cleaned before the step S800, so that the FIB ion beam directly bombards the unneeded part of the sample surface without the photoresist during the production process, and the preset structure is directly formed . Reduce photoresist contamination and improve preparation quality.

In one embodiment, the preparation method of the niobium silicon thin film includes:

providing a magnetron co-sputtering chamber and a niobium target and a silicon target disposed in the magnetron co-sputtering chamber;

Control the vacuum degree of the magnetron sputtering chamber and the niobium target and the silicon target to perform magnetron sputtering with a predetermined sputtering gas pressure and a predetermined sputtering power for a predetermined sputtering time, and depositing a shape on the surface of the substrate as follows the absorption layer or the superconducting thin film layer,

Wherein, the proportion of niobium in the absorber layer is greater than or equal to 81.5% and less than or equal to 97.1%, resulting in a superconducting transition temperature of the absorber layer between 3.85K and 7.1K.

At present, the inductive superconducting edge detector contains two kinds of niobium films or niobium-silicon films with different superconducting transition temperatures. One is applied to superconducting thin film layers, which typically have a superconducting transition temperature (T _c ) of about 9K. Another absorber film applied to the absorber layer consists of a thinner niobium film or a niobium silicon film. The two films are deposited, etched or lifted off to form the structures, respectively. The superconducting thin film layer adopts pure niobium thin film and the absorption layer adopts niobium silicon thin film, which is convenient to form an inductive superconducting edge detector with different transition temperatures of the absorption layer and the superconducting thin film layer.

Traditionally, a feasible method for making an inductive superconducting edge detector is to first use a structure of a superconducting thin film layer formed by deposition and etching, and then use a stripping method to form an absorption layer. The lift-off method requires first patterning with photoresist, then placing it in a sputtering chamber, depositing a superconducting thin film layer, and then lift-off to form an absorbing structure. Although the peeling method is feasible, the sputtering equipment for depositing the superconducting thin film layer usually requires a very high degree of vacuum, and entering the equipment with photoresist will affect the quality of the deposited film.

The manufacturing method of the present invention has a reasonable design, and a degumming treatment is performed during the manufacturing process, so that the photoresist is no longer doped during magnetron sputtering, and the deposition quality of the superconducting thin film layer is improved.

The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

The above-mentioned embodiments only represent several embodiments of the present invention, and the descriptions thereof are specific and detailed, but should not be construed as a limitation on the scope of the invention patent. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can also be made, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (10)

1. An inductive superconducting edge finder, comprising:

a substrate;

an absorption layer disposed on one surface of the substrate;

the dielectric layer is arranged on the surface, far away from the substrate, of the absorption layer and has permeability;

the insulating layer covers the substrate, the absorbing layer and the outer surface of the dielectric layer, the insulating layer is made of silicon oxide or hafnium oxide, and the thickness of the insulating layer is 5-10 nm;

the superconducting thin film layer is arranged on the surface, far away from the substrate, of the insulating layer and is arranged around the absorption layer and the dielectric layer in a continuous closed structure;

a Josephson bridge junction disposed on the superconducting thin film layer.

2. The inductive superconducting edge finder of claim 1,

the absorption layer is a niobium-silicon film or a pure niobium film, and the superconducting film layer is a pure niobium film.

3. An inductive superconducting edge detector according to claim 2, wherein the niobium in the niobium-silicon thin film accounts for more than or equal to 81.5% and less than or equal to 97.1%, and the superconducting transition temperature of the niobium-silicon thin film is between 3.85K and 7.1K.

4. An inductively superconducting edge finder according to claim 3, wherein the absorption layer and the superconducting thin film layer have different superconducting transition temperatures.

5. A method of fabricating an inductive superconducting edge probe, the method comprising:

providing a substrate, and growing an absorption layer on the substrate, wherein the absorption layer is a niobium-silicon film or a pure niobium film;

depositing a dielectric layer on the surface of the absorption layer, wherein the dielectric layer has an anti-reflection effect on incident single photons;

forming a patterned first photoresist layer on the surface of the dielectric layer, and covering the absorption layer of the first preset area;

etching the absorption layer and the dielectric layer outside the first preset area for the first time to expose the substrate;

removing the photoresist, depositing to form an insulating layer, covering the substrate, the absorbing layer and the outer surface of the dielectric layer, wherein the insulating layer is silicon dioxide or hafnium dioxide, and the thickness of the insulating layer is 5-10 nm;

growing a superconducting thin film layer on the surface of the insulating layer, wherein the superconducting thin film layer is a pure niobium thin film;

forming a patterned second photoresist layer on the superconducting thin film layer to cover a second preset area, wherein the second preset area is an annular continuous area at the periphery of the absorption layer and the dielectric layer;

performing second etching to etch the superconducting thin film layer outside the second preset region to obtain a closed annular superconducting structure, wherein the closed annular superconducting structure is formed by continuously surrounding the absorption layer, the dielectric layer and part of the insulating layer on the surface of the substrate;

and exposing the closed annular superconducting structure to manufacture a Josephson bridge junction.

6. The method for manufacturing an induction type superconducting edge detector according to claim 5, wherein the step of performing the first etching to etch away the absorption layer and the dielectric layer outside the first predetermined region and expose the substrate comprises:

and etching the absorption layer outside the first preset area by adopting fluorine-based plasma for the first time to expose the substrate.

7. The method of claim 5, wherein the steps of removing the photoresist, depositing an insulating layer, and covering the substrate and the outer surfaces of the absorber and dielectric layers comprise:

carrying out photoresist removing treatment on the structure after the first etching by adopting a cleaning agent;

and depositing an insulating layer with the thickness of 5-10nm on the surface of the structure after the photoresist is removed by adopting an Atomic Layer Deposition (ALD) technology.

8. The method for manufacturing an induction type superconducting edge detector according to claim 5, wherein in the step of performing the second etching to etch off the superconducting thin film layer outside the second preset region to obtain the closed annular superconducting structure, the substrate surface continuously surrounds the periphery of the absorption layer, the dielectric layer and the partial insulating layer, and the time for performing the second etching is longer than the time required for etching the pure niobium thin film.

9. An inductive superconducting edge detector fabrication method according to claim 5 wherein said step of exposing said closed loop superconducting structure to form a Josephson bridge junction comprises:

on the annular superconducting structure, a Josephson bridge junction is directly manufactured by adopting a Focused Ion Beam (FIB) or is manufactured by adopting an electron beam Exposure (EBL) to manufacture a pattern and then is manufactured by adopting dry etching.

10. The method for manufacturing an inductive superconducting edge probe according to claim 5, wherein the method for manufacturing the niobium-silicon thin film comprises the following steps:

providing a magnetron co-sputtering chamber and a niobium target and a silicon target which are arranged in the magnetron co-sputtering chamber;

controlling the vacuum degree of the magnetron sputtering chamber and carrying out magnetron sputtering on the niobium target and the silicon target for a preset sputtering time at a preset sputtering air pressure and a preset sputtering power, depositing and forming the absorption layer or the superconducting thin film layer on the surface of the substrate,

wherein, niobium accounts for more than or equal to 81.5% and less than or equal to 97.1% of the absorption layer, and the superconducting transition temperature of the absorption layer is between 3.85K and 7.1K.

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