CN109285941B - Induction type superconducting edge detector and preparation method thereof - Google Patents
Induction type superconducting edge detector and preparation method thereof Download PDFInfo
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- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
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- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
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- H—ELECTRICITY
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Abstract
The invention relates to an induction type superconducting edge detector and a manufacturing method thereof, wherein the induction type superconducting edge detector comprises: the method comprises the following steps: the device comprises a substrate, an absorption layer, a dielectric layer, an insulating layer, a superconducting thin film layer and a Josephson bridge junction; the absorption layer is arranged on one surface of the substrate; the dielectric layer is arranged on the surface of the absorption layer far away from the substrate and has permeability; the insulating layer covers the absorption layer and the dielectric layer; the superconducting thin film layer is arranged on the surface, far away from the substrate, of the insulating layer and is arranged around the absorption layer and the dielectric layer in a continuous closed structure; the Josephson bridge junction is disposed on the superconducting thin film layer. The induction type superconducting edge detector comprises a dielectric layer with an anti-reflection effect on photons, and the absorption efficiency of the induction type superconducting edge detector on the single photons is improved.
Description
Technical Field
The invention belongs to the technical field of superconducting electronic information, and particularly relates to an induction type superconducting edge detector and a preparation method thereof.
Background
Basic physical quantity measurement of individual particles requires extremely sensitive detectors. One such detector is a Superconducting transition edge detector (TES), which is formed from a Superconducting thin film and has a working temperature in a narrow range between its Superconducting and normal states, i.e. a Superconducting resistance between zero and normal values.
Since Andrews proposed a superconducting transition edge detector in 1949, there has been tremendous progress in superconducting transition edge detectors. Compared with a normal-temperature semiconductor single photon detector, such as an avalanche diode or a photomultiplier, the superconducting transition edge detector has the advantages of high response speed and low detection energy.
The superconducting transition edge detector is a very sensitive detection instrument, and the conventional superconducting transition edge detector has weak photon absorption and is influenced by an observation environment, so that the superconducting transition edge detector has poor use effect and inaccurate detection.
Disclosure of Invention
In view of the above, there is a need to provide an inductive superconducting edge detector capable of enhancing photon absorption and a method for manufacturing the same.
An inductive superconducting edge finder comprising:
a substrate;
an absorption layer disposed on one surface of the substrate;
the dielectric layer is arranged on the surface of the absorption layer far away from the substrate and has permeability;
the insulating layer covers the absorption layer and the dielectric layer;
the superconducting thin film layer is arranged on the surface, far away from the substrate, of the insulating layer and is arranged around the absorption layer and the dielectric layer in a continuous closed structure;
a Josephson bridge junction disposed on the superconducting thin film layer.
In one embodiment, the absorption layer is a niobium-silicon thin film or a pure niobium thin film, and the superconducting thin film layer is a pure niobium thin film.
In one embodiment, the niobium accounts for 81.5% or more and 97.1% or less of the niobium in the niobium-silicon thin film, and the superconducting transition temperature of the niobium-silicon thin film is between 3.85K and 7.1K.
In one embodiment, the absorption layer and the superconducting thin film layer have different superconducting transition temperatures.
The invention also provides a manufacturing method of the induction type superconducting edge detector, which comprises the following steps:
providing a substrate, and growing an absorption layer on the substrate, wherein the absorption layer is a niobium-silicon film or a pure niobium film;
depositing a dielectric layer on the surface of the absorption layer, wherein the dielectric layer has an anti-reflection effect on incident single photons;
forming a patterned first photoresist layer on the surface of the dielectric layer, and covering the absorption layer of the first preset area;
etching the absorption layer and the dielectric layer outside the first preset area for the first time to expose the substrate;
removing the photoresist, depositing to form an insulating layer, and covering the substrate, the absorbing layer and the outer surface of the dielectric layer;
growing a superconducting thin film layer on the surface of the insulating layer, wherein the superconducting thin film layer is a pure niobium thin film;
forming a second patterned photoresist layer on the superconducting thin film layer to cover the second preset area, wherein the second preset area is an annular continuous area at the periphery of the absorption layer and the dielectric layer;
performing second etching to etch the superconducting thin film layer outside the second preset region to obtain a closed annular superconducting structure, wherein the closed annular superconducting structure is formed by continuously surrounding the absorption layer, the dielectric layer and part of the insulating layer on the surface of the substrate;
and exposing the closed annular superconducting structure to manufacture a Josephson bridge junction.
In one embodiment, the performing the first etching to etch away the absorption layer and the dielectric layer outside the first predetermined region, and the exposing the substrate includes:
and etching the absorption layer outside the first preset area by adopting fluorine-based plasma for the first time to expose the substrate.
In one embodiment, the removing the photoresist and depositing to form an insulating layer, wherein the step of covering the substrate and the outer surfaces of the absorption layer and the dielectric layer comprises:
carrying out photoresist removing treatment on the structure after the first etching by adopting a cleaning agent;
and depositing an insulating layer with the thickness of 5-10nm on the surface of the structure after the photoresist is removed by adopting an Atomic Layer Deposition (ALD) technology.
In one embodiment, in the step of performing the second etching to etch the superconducting thin film layer outside the second preset region to obtain the closed annular superconducting structure, the superconducting thin film layer continuously surrounds the periphery of the absorption layer, the dielectric layer and the partial insulating layer on the surface of the substrate, the time for performing the second etching is longer than the time required for etching the pure niobium thin film.
In one embodiment, the step of exposing the closed loop superconducting structure to form a josephson bridge junction includes:
on the annular superconducting structure, a Josephson bridge junction is directly manufactured by adopting a Focused Ion Beam (FIB) or is manufactured by adopting an electron beam Exposure (EBL) to manufacture a pattern and then is manufactured by adopting dry etching.
In one embodiment, the method for preparing the niobium-silicon thin film comprises the following steps:
providing a magnetron co-sputtering chamber and a niobium target and a silicon target which are arranged in the magnetron co-sputtering chamber;
controlling the vacuum degree of the magnetron sputtering chamber and carrying out magnetron sputtering on the niobium target and the silicon target for a preset sputtering time at a preset sputtering air pressure and a preset sputtering power, depositing and forming the absorption layer or the superconducting thin film layer on the surface of the substrate,
wherein, niobium accounts for more than or equal to 81.5% and less than or equal to 97.1% of the absorption layer, and the superconducting transition temperature of the absorption layer is between 3.85K and 7.1K.
The invention provides an induction type superconducting edge detector and a manufacturing method thereof.
Drawings
FIG. 1 is a top view of an inductive superconducting edge probe according to an embodiment of the present invention;
FIG. 2 is a cross-section taken along line AB of FIG. 1;
FIG. 3 is a process flow diagram of a method of fabricating an inductive superconducting edge probe in accordance with an embodiment of the present invention.
Description of the main elements
Inductive superconducting edge finder 10
Superconducting thin film layer 500
Josephson bridge junction 600
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and 2, the present invention provides an inductive superconducting edge finder 10, comprising: a substrate 100, an absorption layer 200, a dielectric layer 300, an insulation layer 400, a superconducting thin film layer 500, and a josephson bridge junction 600; the absorption layer 200 is disposed on one surface of the substrate 100; the medium layer 300 is arranged on the surface of the absorption layer 200 far away from the substrate 100, and the medium layer 300 has permeability; the insulating layer 400 is disposed to cover the absorption layer 200 and the dielectric layer 300; the superconducting thin film layer 500 is arranged on the surface of the insulating layer 400 far away from the substrate, and is arranged around the absorption layer 200 and the dielectric layer 300 in a continuous closed structure; the josephson bridge junction 600 is disposed on the superconducting thin film layer 500.
The substrate 100 material may be silicon, magnesium silicide, magnesium oxide, etc. The absorber layer 200 is disposed between the dielectric layer 300 and the substrate 100, preferably with the absorber layer 200 and the dielectric layer 300 being flush. The dielectric layer 300 may be silicon dioxide, silicon nitride, or a specially designed structure thereof. The substrate 100 is a substrate with an oxide layer. The absorption layer 200 and the superconducting thin film layer 500 are made of superconducting materials. Known superconducting materials include niobium, niobium nitride, niobium-silicon mixed materials, and the like. The closed structure may be annular, closed rectangular, etc. And the superconducting thin film layer 500 of the closed structure may further include a connection line made of two superconducting thin films at two ends of the superconducting thin film layer for passing a bias current. If the bias current is a direct current, at least two of the josephson bridge junctions 600 are double-junction superconducting rings formed by connecting the superconducting thin film layers in parallel. If the bias current is a radio frequency current, the josephson bridge junction 600 may be one.
The induction type superconducting edge detector 10 provided in the embodiment includes a dielectric layer 300 having an anti-reflection function on photons, so that the absorption efficiency of the induction type superconducting edge detector 10 on the photons is improved.
In one embodiment, the absorption layer 200 is a niobium-silicon thin film or a pure niobium thin film, and the superconducting thin film layer 500 is a pure niobium thin film. In one embodiment, the superconducting transition temperatures of the absorption layer 200 and the superconducting thin film layer 500 have different superconducting transition temperatures.
In one embodiment, the absorber layer 200 is a niobium silicon thin film. In the niobium-silicon thin film, the niobium accounts for more than or equal to 81.5% and less than or equal to 97.1% of the niobium-silicon thin film, so that the superconducting transition temperature of the niobium-silicon thin film is between 3.85K and 7.1K. Conventionally, the superconducting transition temperature of the superconducting thin film layer can be adjusted by adjusting the thickness of the pure niobium thin film. In fact, the superconducting transition temperature of a pure niobium film with a thickness of 1nm is 0.4K. And when the thickness of the pure niobium superconducting film is 5nm, the superconducting transition temperature is 5.9K. Therefore, the slight change of the thickness of the pure niobium superconducting film has great influence on the superconducting transition temperature, and the uniformity of the thin superconducting film is difficult to ensure. The niobium-silicon thin film adopted by the embodiment comprises niobium and silicon components, and the superconducting thin film layer with the superconducting transition temperature of 3.85K to 7.1K can be obtained by adjusting the proportion of niobium in the niobium-silicon thin film. The thickness of the niobium-silicon thin film can be 20nm to 70nm, and uniformity in the preparation process of the niobium-silicon thin film in the thickness range is easy to guarantee.
When the direct current induction type superconducting edge detector with two Josephson bridge junctions is applied, direct current bias current is introduced into a double-junction superconducting ring formed by the closed superconducting thin film layer 500 and the two Josephson bridge junctions, when the bias current is larger than the maximum critical current of the double-junction superconducting ring, voltage is generated at two ends of the double-junction superconducting ring, and the voltage value shows periodic change along with the magnetic flux induced by the double-junction superconducting ring. Therefore, the absorption layer 200 and the dielectric layer 300 absorb photons, and then the magnetic flux in the double-junction superconducting ring changes, and the change can be reflected by the periodic change of the voltage value.
Referring to fig. 3, the present invention further provides a method for manufacturing an inductive superconducting edge probe 10, including:
s100, providing a substrate 100, and growing an absorption layer 200 on the substrate 100, wherein the absorption layer 200 is a niobium-silicon thin film or a pure niobium thin film.
The substrate 100 may be made of silicon, magnesium silicide, magnesium oxide, or the like. An absorber layer 200 is grown on the substrate 100. The magnetron sputtering mode can be direct current sputtering, alternating current sputtering, radio frequency magnetron sputtering, reactive sputtering, ion beam sputtering and the like. The absorbing layer may also be other superconducting materials such as pure niobium, niobium nitride, etc. Preferably, the absorber layer 200 is grown on and flush with one surface of the substrate 100.
S200, depositing a dielectric layer 300 on the surface of the absorption layer 200, wherein the dielectric layer 300 has an anti-reflection effect on incident single photons.
The dielectric layer 300 may be silicon dioxide, silicon nitride, or a specially designed structure thereof. The surface deposition may be physical vapor deposition. Preferably, the dielectric layer 300 is deposited on and flush with the corresponding surface of the absorber layer 200 at the interface with the substrate 100.
S300, forming a patterned first photoresist layer 110 on the surface of the dielectric layer 300 to cover the absorption layer 200 in the first predetermined region.
Photoresists are light-sensitive organic compounds. The specific region is protected by exposure to a developer which is insoluble before exposure and soluble after exposure. Preferably, the first photoresist layer 110 covers the corresponding surface of the dielectric layer 300 contacting the absorption layer 200, and covers the central region of the corresponding surface.
S400, etching for the first time to etch the absorption layer 200 and the dielectric layer 300 outside the first preset area and expose the substrate 100.
The etching may be dry etching or wet etching. Preferably the etch is a dry etched plasma etch.
In one embodiment, a fluorine-based plasma is used to perform a first etching to etch away the absorption layer 200 and the dielectric layer 300 outside the first predetermined region, thereby exposing the substrate 100.
The plasma used for etching is typically gaseous. The fluorine-based plasma may be a fluorocarbon plasma. In the etching process, oxygen plasma, nitrogen plasma, or the like may be used depending on the purpose and effect. Preferably, the final etched structure is that the center of the surface of the substrate 100 is covered by the absorption layer 200, the dielectric layer 300 and the first photoresist layer 110, and the center of the surface of the substrate 100 is flush with the absorption layer 200, the dielectric layer 300 and the first photoresist layer 110.
And S500, removing the residual first photoresist layer, depositing to form an insulating layer 400, and covering the absorption layer 200 and the dielectric layer 300.
In one embodiment, the structure after the first etching is subjected to photoresist removing treatment by using a cleaning agent.
In one embodiment, an Atomic Layer Deposition (ALD) technique is used to deposit an insulating layer of one atomic thickness on the surface of the structure after the photoresist is removed.
Atomic layer deposition is a process by which a substance can be deposited as a monoatomic film, layer by layer, onto a substrate surface. Atomic layer deposition is similar to ordinary chemical deposition. However, in an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one in such a way that only one layer of atoms is deposited per reaction. An insulating layer is deposited with a thickness of 5-10nm using Atomic Layer Deposition (ALD) techniques. Preferably, the insulating layer 400 covers the exposed surface area of the substrate 100 in contact with the absorption layer 200 and fully covers the surfaces of the absorption layer 200 and the dielectric layer. The insulating layer 400 formed by Atomic Layer Deposition (ALD) may be silicon oxide or hafnium oxide. The insulation layer 400 ensures insulation between the absorption layer 200 and the superconducting thin film layer 500, so that the surface area of the absorption layer 200 can be maximized, that is, the outer diameter of the absorption layer 200 is close to the inner diameter of the superconducting thin film layer 500, which is beneficial to improving the detection efficiency of the induction type superconducting edge detector.
S600, growing a superconducting thin film layer 500 on the surface of the insulating layer 400, wherein the superconducting thin film layer is a niobium thin film.
The magnetron sputtering mode can be direct current sputtering, alternating current sputtering, radio frequency magnetron sputtering, reactive sputtering, ion beam sputtering and the like. The superconducting thin film layer can be made of other superconducting materials, such as pure niobium, niobium nitride and the like. Preferably, the superconducting thin film layer 500 is grown on the surface of the insulating layer 400 to be flush with the side of the surface of the insulating layer 400.
S700, forming a patterned second photoresist layer 120 on the superconducting thin film layer 500 to cover the second predetermined region, where the second predetermined region is a closed continuous region disposed at the periphery of the absorption layer 200 and the dielectric layer 300.
And S800, performing second etching to etch the superconducting thin film layer 500 outside the second preset region to obtain a closed annular superconducting structure, wherein the closed annular superconducting structure is formed by continuously surrounding the peripheries of the absorption layer, the dielectric layer and part of the insulating layer on the surface of the substrate.
In an embodiment, in the step of performing the second etching to etch the second predetermined structure, the time for performing the second etching is longer than a predetermined time for etching the niobium film.
The second etching should be carried out for a time substantially longer than the time required for etching the niobium film. The etch rate of the niobium film is about 10 times the etch rate of the dielectric layer 300. If the etching time exceeds the time required for etching the niobium film, the dielectric layer on the first exposed absorbing layer is thinned, the etching depth of the dielectric layer does not influence the light transmission performance, and the absorbing layer below the dielectric layer is not etched. Preferably, the specific structure formed after the second etching is as follows: the absorption layer 200 is located in the center of the surface of the substrate 100, and the superconducting thin film layer 500 is a closed structure, which may be a ring or a rectangle, and surrounds the absorption layer 200. And an insulating layer 400 is provided between the superconducting thin film layer 500 and the substrate, and between the superconducting thin film layer 500 and the absorption layer 200 and the dielectric layer 300.
Because the absorption layer 200 needs an antireflection film, the etching rate of the materials in the process of etching niobium is very low, after the absorption layer 200 is manufactured, the dielectric layer 300 is manufactured, and finally the superconducting thin film layer 500 is deposited, wherein the insulating layer 400 is equivalent to an etching barrier layer added between the absorption layer 200 and the superconducting thin film layer 500. After the etching of the preset structure is finished, the absorption layer 200 cannot be etched continuously, so that the stability and the repeatability of the device performance are ensured. The insulating layer 400 is for the purpose that the absorption layer and the superconducting thin film layer 500 cannot form a superconducting connection.
S900, exposing the closed ring-shaped superconducting structure to fabricate a josephson bridge junction 600.
In one embodiment, a Focused Ion Beam (FIB) is used to directly fabricate a josephson bridge junction 600 on the annular superconducting structure; or an Electron Beam Lithography (EBL) process is used to form a pattern, followed by dry etching to form the josephson bridge junction 600.
Specifically, two josephson bridge junctions 600 are fabricated on the annular superconducting structure using Focused Ion Beams (FIB). The focused ion beam is a precise micro-processing means, has very high processing precision, and can process dozens of nanometer lines at the finest. This is mainly because the energy transfer efficiency of ions is much higher than that of electrons in solid materials. The sensitivity of a conventional electron beam exposure resist to ions is 100 times higher than that of an electron beam. In addition to high precision, another advantage of ion beam exposure is that there is little proximity effect. Since the mass of the ions themselves is much larger than the electrons, the ions scatter much less than the electrons in the resist and there is little backscattering effect.
In one embodiment, after step S700 and before step S800, the second recording medium is cleaned, so that the FIB ion beam directly bombards the unwanted portion of the sample surface during the manufacturing process without carrying the photoresist, and the predetermined structure is directly formed. Reduce the pollution of the photoresist and improve the preparation quality.
In one embodiment, the method for preparing the niobium-silicon thin film comprises the following steps:
providing a magnetron co-sputtering chamber and a niobium target and a silicon target which are arranged in the magnetron co-sputtering chamber;
controlling the vacuum degree of the magnetron sputtering chamber and carrying out magnetron sputtering on the niobium target and the silicon target for a preset sputtering time at a preset sputtering air pressure and a preset sputtering power, depositing and forming the absorption layer or the superconducting thin film layer on the surface of the substrate,
wherein, the niobium accounts for more than or equal to 81.5% and less than or equal to 97.1% of the absorption layer, so that the superconducting transition temperature of the absorption layer is between 3.85K and 7.1K.
At present, the induction type superconducting edge detector comprises two kinds of niobium films or niobium silicon films with different superconducting transition temperatures. A superconducting thin film layer, typically having a superconducting transition temperature (T)c) Is about 9K. Another absorber film applied to the absorber layer is composed of a thinner niobium film or niobium-silicon film. The two films are deposited, etched or stripped separately to form the structure. The superconducting film layer is a pure niobium film, and the absorption layer is a niobium-silicon film, so that the absorption layer and the superconducting film layer can form an induction type superconducting edge detector with different transition temperatures.
Conventionally, a feasible method for manufacturing an inductive superconducting edge detector is to form a superconducting thin film layer structure by deposition and etching, and then form an absorption layer by stripping. The lift-off method requires patterning with photoresist, then placing into a sputtering chamber, depositing a superconducting thin film layer, and then lift-off to form the absorbing structure. Although the stripping method is feasible, sputtering equipment for depositing the superconducting thin film layer generally needs extremely high vacuum degree, and photoresist enters the equipment, so that the quality of the deposited thin film is influenced.
The manufacturing method is reasonable in design, and photoresist is removed in the manufacturing process, so that photoresist is not doped during magnetron sputtering, and the deposition quality of the superconducting thin film layer is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An inductive superconducting edge finder, comprising:
a substrate;
an absorption layer disposed on one surface of the substrate;
the dielectric layer is arranged on the surface, far away from the substrate, of the absorption layer and has permeability;
the insulating layer covers the substrate, the absorbing layer and the outer surface of the dielectric layer, the insulating layer is made of silicon oxide or hafnium oxide, and the thickness of the insulating layer is 5-10 nm;
the superconducting thin film layer is arranged on the surface, far away from the substrate, of the insulating layer and is arranged around the absorption layer and the dielectric layer in a continuous closed structure;
a Josephson bridge junction disposed on the superconducting thin film layer.
2. The inductive superconducting edge finder of claim 1,
the absorption layer is a niobium-silicon film or a pure niobium film, and the superconducting film layer is a pure niobium film.
3. An inductive superconducting edge detector according to claim 2, wherein the niobium in the niobium-silicon thin film accounts for more than or equal to 81.5% and less than or equal to 97.1%, and the superconducting transition temperature of the niobium-silicon thin film is between 3.85K and 7.1K.
4. An inductively superconducting edge finder according to claim 3, wherein the absorption layer and the superconducting thin film layer have different superconducting transition temperatures.
5. A method of fabricating an inductive superconducting edge probe, the method comprising:
providing a substrate, and growing an absorption layer on the substrate, wherein the absorption layer is a niobium-silicon film or a pure niobium film;
depositing a dielectric layer on the surface of the absorption layer, wherein the dielectric layer has an anti-reflection effect on incident single photons;
forming a patterned first photoresist layer on the surface of the dielectric layer, and covering the absorption layer of the first preset area;
etching the absorption layer and the dielectric layer outside the first preset area for the first time to expose the substrate;
removing the photoresist, depositing to form an insulating layer, covering the substrate, the absorbing layer and the outer surface of the dielectric layer, wherein the insulating layer is silicon dioxide or hafnium dioxide, and the thickness of the insulating layer is 5-10 nm;
growing a superconducting thin film layer on the surface of the insulating layer, wherein the superconducting thin film layer is a pure niobium thin film;
forming a patterned second photoresist layer on the superconducting thin film layer to cover a second preset area, wherein the second preset area is an annular continuous area at the periphery of the absorption layer and the dielectric layer;
performing second etching to etch the superconducting thin film layer outside the second preset region to obtain a closed annular superconducting structure, wherein the closed annular superconducting structure is formed by continuously surrounding the absorption layer, the dielectric layer and part of the insulating layer on the surface of the substrate;
and exposing the closed annular superconducting structure to manufacture a Josephson bridge junction.
6. The method for manufacturing an induction type superconducting edge detector according to claim 5, wherein the step of performing the first etching to etch away the absorption layer and the dielectric layer outside the first predetermined region and expose the substrate comprises:
and etching the absorption layer outside the first preset area by adopting fluorine-based plasma for the first time to expose the substrate.
7. The method of claim 5, wherein the steps of removing the photoresist, depositing an insulating layer, and covering the substrate and the outer surfaces of the absorber and dielectric layers comprise:
carrying out photoresist removing treatment on the structure after the first etching by adopting a cleaning agent;
and depositing an insulating layer with the thickness of 5-10nm on the surface of the structure after the photoresist is removed by adopting an Atomic Layer Deposition (ALD) technology.
8. The method for manufacturing an induction type superconducting edge detector according to claim 5, wherein in the step of performing the second etching to etch off the superconducting thin film layer outside the second preset region to obtain the closed annular superconducting structure, the substrate surface continuously surrounds the periphery of the absorption layer, the dielectric layer and the partial insulating layer, and the time for performing the second etching is longer than the time required for etching the pure niobium thin film.
9. An inductive superconducting edge detector fabrication method according to claim 5 wherein said step of exposing said closed loop superconducting structure to form a Josephson bridge junction comprises:
on the annular superconducting structure, a Josephson bridge junction is directly manufactured by adopting a Focused Ion Beam (FIB) or is manufactured by adopting an electron beam Exposure (EBL) to manufacture a pattern and then is manufactured by adopting dry etching.
10. The method for manufacturing an inductive superconducting edge probe according to claim 5, wherein the method for manufacturing the niobium-silicon thin film comprises the following steps:
providing a magnetron co-sputtering chamber and a niobium target and a silicon target which are arranged in the magnetron co-sputtering chamber;
controlling the vacuum degree of the magnetron sputtering chamber and carrying out magnetron sputtering on the niobium target and the silicon target for a preset sputtering time at a preset sputtering air pressure and a preset sputtering power, depositing and forming the absorption layer or the superconducting thin film layer on the surface of the substrate,
wherein, niobium accounts for more than or equal to 81.5% and less than or equal to 97.1% of the absorption layer, and the superconducting transition temperature of the absorption layer is between 3.85K and 7.1K.
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| JP2004226147A (en) * | 2003-01-21 | 2004-08-12 | Seiko Instruments Inc | Superconductivity radiation detector |
| CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
| CN104630709A (en) * | 2015-03-17 | 2015-05-20 | 南京大学 | Method for preparing niobium-silicon film by utilizing magnetron co-sputtering method |
| WO2017017417A1 (en) * | 2015-07-27 | 2017-02-02 | The Royal Surrey County Hospital | Microdosimeter comprising an inductive superconducting transition edge sensor |
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| JP2004226147A (en) * | 2003-01-21 | 2004-08-12 | Seiko Instruments Inc | Superconductivity radiation detector |
| CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
| CN104630709A (en) * | 2015-03-17 | 2015-05-20 | 南京大学 | Method for preparing niobium-silicon film by utilizing magnetron co-sputtering method |
| WO2017017417A1 (en) * | 2015-07-27 | 2017-02-02 | The Royal Surrey County Hospital | Microdosimeter comprising an inductive superconducting transition edge sensor |
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