CN109285941A - Induction type superconduction edge finder and preparation method thereof - Google Patents
Induction type superconduction edge finder and preparation method thereof Download PDFInfo
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- 230000006698 induction Effects 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- LIZIAPBBPRPPLV-UHFFFAOYSA-N niobium silicon Chemical group [Si].[Nb] LIZIAPBBPRPPLV-UHFFFAOYSA-N 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 25
- 239000010955 niobium Substances 0.000 claims description 23
- 229910052758 niobium Inorganic materials 0.000 claims description 23
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 23
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 21
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 8
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims description 3
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- 238000007363 ring formation reaction Methods 0.000 claims 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 239000000395 magnesium oxide Substances 0.000 description 2
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 238000003708 edge detection Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
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Abstract
The present invention relates to a kind of induction type superconduction edge finder and preparation method thereof, the induction type superconduction edge finder include: include: substrate, absorbed layer, dielectric layer, insulating layer, superconducting thin film layer and Josephson's bridge knot；A surface of the substrate is arranged in the absorbed layer；The separate surface with the substrate of the absorbed layer is arranged in the dielectric layer, and the dielectric layer has anti-reflection property；The insulating layer covers the absorbed layer and dielectric layer setting；Surface of the insulating layer far from the substrate is arranged in the superconducting thin film layer, and is arranged with being continuously closed structure ring around the absorbed layer and dielectric layer；Josephson's bridge knot is arranged on the superconducting thin film layer.This induction type superconduction edge finder includes one layer with the dielectric layer to photon with anti-reflection effect, improves induction type superconduction edge finder to the absorption efficiency of single photon.
Description
Technical field
The invention belongs to superelectron information technology field, more particularly to a kind of induction type superconduction edge finder and its
Preparation method.
Background technique
The fundamental physical quantity measurement of single particle needs extremely sensitive detector.Suiperconducting transition edge finder
(Superconducting transition edge sensors abbreviation TES) is exactly a kind of such detector, it is by surpassing
Film composition is led, operating temperature is between the very narrow range of its superconducting state and normal state, that is, superconduction resistance is zero and normal
Between value.
Since Andrews is after proposition suiperconducting transition edge finder in 1949, suiperconducting transition edge finder has huge
Big progress.With the semiconductor single-photon detector of room temperature, if avalanche diode or photomultiplier tube are compared, suiperconducting transition
Edge finder has the advantages of fast response time, low detection energy.
Suiperconducting transition edge finder is very sensitive detecting instrument, and traditional suiperconducting transition edge finder is to photon
Absorption is weaker, in addition the influence of observing environment detects not accurate enough so that suiperconducting transition edge finder using effect is poor.
Summary of the invention
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of induction type superconduction edge spy that can enhance photonic absorption
Survey device and preparation method thereof.
A kind of induction type superconduction edge finder includes:
Substrate；
A surface of the substrate is arranged in absorbed layer；
Dielectric layer, is arranged in the separate surface with the substrate of the absorbed layer, and the dielectric layer has anti-reflection property；
Insulating layer covers the absorbed layer and dielectric layer setting；
Surface of the insulating layer far from the substrate is arranged in superconducting thin film layer, and with continuous closing structure around described
Absorbed layer and dielectric layer setting；
Josephson's bridge knot is arranged on the superconducting thin film layer.
The absorbed layer is niobium silicon thin film or pure niobium pentoxide film in one of the embodiments, and the superconducting thin film layer is pure
Niobium pentoxide film.
In one of the embodiments, in the niobium silicon thin film, niobium proportion in the niobium silicon thin film is greater than
Equal to 81.5% and less than or equal to 97.1%, the superconducting transition temperature of the niobium silicon thin film is between 3.85K to 7.1K.
The absorbed layer is different with the superconducting transition temperature of the superconducting thin film layer in one of the embodiments,.
The present invention also provides a kind of induction type superconduction edge finder production method, the production method includes:
One substrate is provided, grows absorbed layer over the substrate, the absorbed layer is niobium silicon thin film or pure niobium pentoxide film；
In the absorption layer surface metallization medium layer, the dielectric layer has anti-reflection effect to incident single photon；
Patterned first photoresist layer is formed in the dielectric layer surface, covers the absorbed layer of the first predeterminable area；
First time etching is carried out, the absorbed layer and dielectric layer outside first predeterminable area is etched away, exposes the lining
Bottom；
Photoresist is removed, deposition forms insulating layer, covers the outer surface of the substrate and the absorbed layer and dielectric layer；
In the surface of insulating layer growth of superconductive film layer, the superconducting thin film layer is pure niobium pentoxide film；
On the superconducting thin film layer, patterned second photoresist layer is formed, covers second predeterminable area, it is described
Second predeterminable area is the annular continuum of the absorbed layer and dielectric layer periphery；
It carries out second to etch, etches away the superconducting thin film layer outside second predeterminable area, obtain closed hoop superconduction
Structure is continued circling on the substrate surface in the periphery of the absorbed layer, dielectric layer and partial insulative layer；
On the closed hoop superconducting structure, Josephson's bridge knot is produced in exposure.
The progress first time etching in one of the embodiments, etches away the absorption outside first predeterminable area
Layer and dielectric layer, the step of exposing the substrate include:
First time etching is carried out using fluorine-based plasma, etches away the absorbed layer outside first predeterminable area, cruelly
Expose the substrate.
The removal photoresist in one of the embodiments, deposition form insulating layer, cover the substrate and the suction
The step of receiving the outer surface of layer and dielectric layer include:
Structure after first time etching is subjected to processing of removing photoresist using cleaning agent；
Body structure surface after described remove photoresist, using the insulating layer of atomic layer deposition (ALD) technology deposition one 5-10nm thickness.
In one of the embodiments, in second of etching of the progress, etch away super outside second predeterminable area
Lead film layer, obtain on substrate surface described in the closed hoop superconducting structure continued circling the absorbed layer, dielectric layer and
In the step of the periphery of partial insulative layer, the time of second of etching of progress is greater than the predetermined pure niobium pentoxide film of etching and is taken
Between.
Described on the closed hoop superconducting structure in one of the embodiments, Josephson's bridge is produced in exposure
The step of knot includes:
On the cyclic annular superconducting structure, Josephson's bridge knot is directly produced using focused ion beam (FIB) or is adopted
Then dry etching is used to produce Josephson's bridge knot with electron beam exposure (EBL) production figure.
The preparation method of the niobium silicon thin film includes: in one of the embodiments,
Magnetic control co-sputtering room is provided and is arranged in the indoor niobium target of the magnetic control co-sputtering and silicon target；
Vacuum degree and the niobium target and the silicon target of the magnetron sputtering chamber are controlled with predetermined sputtering pressure, predetermined sputtering
Power carries out the predetermined sputtering time of magnetron sputtering, is the absorbed layer or the superconducting thin film in the substrate surface deposition formation
Layer,
Wherein, proportion is more than or equal to 81.5% and is less than or equal to 97.1% niobium in the absorbent layer, the absorption
The superconducting transition temperature of layer is between 3.85K to 7.1K.
The present invention provides a kind of induction type superconduction edge finder and preparation method thereof, this induction type superconduction edge detections
Device includes one layer with the dielectric layer to photon with anti-reflection effect, improves induction type superconduction edge finder to single photon
Absorption efficiency.
Detailed description of the invention
Fig. 1 is the induction type superconduction edge finder structure top view of one embodiment of the invention；
Fig. 2 is the section of AB line position in Fig. 1；
Fig. 3 is the process flow chart of the induction type superconduction edge finder production method of one embodiment of the invention.
Main element symbol description
Induction type superconduction edge finder 10
Substrate 100
Absorbed layer 200
Dielectric layer 300
Insulating layer 400
Superconducting thin film layer 500
Josephson's bridge knot 600
First photoresist layer 110
Second photoresist layer 120
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, right with reference to the accompanying drawings and embodiments
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
Referring to Figure 1 and Fig. 2, the present invention provide a kind of induction type superconduction edge finder 10, comprising: substrate 100 absorbs
Layer 200, dielectric layer 300, insulating layer 400, superconducting thin film layer 500 and Josephson's bridge knot 600；The setting of absorbed layer 200 exists
One surface of the substrate 100；The separate table with the substrate 100 of the absorbed layer 200 is arranged in the dielectric layer 300
Face, the dielectric layer 300 have anti-reflection property；The insulating layer 400 covers the absorbed layer 200 and dielectric layer 300 is arranged；It is described
The surface of the insulating layer 400 far from the substrate is arranged in superconducting thin film layer 500, and to be continuously closed structure ring around the suction
It receives layer 200 and dielectric layer 300 is arranged；Josephson's bridge knot 600 is arranged on the superconducting thin film layer 500.
100 material of substrate can be silicon, magnesium silicide, magnesia etc..The absorbed layer 200 is arranged in the dielectric layer
Between 300 and the substrate 100, the preferably described absorbed layer 200 and the dielectric layer 300 are flushed.The dielectric layer 300 can be with
For silica, silicon nitride or its structure with special designing etc..The substrate 100 is the substrate with oxide layer.Institute
It states absorbed layer 200 and the superconducting thin film layer 500 is made of superconductor.Known superconductor has niobium, niobium nitride, niobium silicon mixed
Condensation material etc..The closing structure can be ring-type, closed rectangular etc..And the superconducting thin film layer 500 of the closing structure is also
May include the superconducting thin film layer both ends band is made line there are two superconducting thin film, for being passed through bias current.If bias current
For DC current, Josephson's bridge knot 600 at least two, the binode superconduction for being by the superconducting thin film layer parallel connection
Ring.If bias current is radio-frequency current, Josephson's bridge knot 600 can be one.
Induction type superconduction edge finder 10 provided in the present embodiment includes one layer anti-reflection with having to photon
The dielectric layer 300 of effect improves induction type superconduction edge finder 10 to the absorption efficiency of single photon.
In one embodiment, the absorbed layer 200 is niobium silicon thin film or pure niobium pentoxide film, and the superconducting thin film layer 500 is
Pure niobium pentoxide film.In one embodiment, the superconducting transition temperature of the absorbed layer 200 and the superconducting thin film layer 500 has not
Same superconducting transition temperature.
In one embodiment, the absorbed layer 200 is niobium silicon thin film.In the niobium silicon thin film, the niobium is in the niobium
Proportion leads to the superconducting transition temperature of the niobium silicon thin film more than or equal to 81.5% and less than or equal to 97.1% in silicon thin film
It is between 3.85K to 7.1K.In the past, pass through the suiperconducting transition of the thickness of the pure niobium pentoxide film of adjusting also adjustable superconducting thin film layer
Temperature.In fact, when the thickness 1nm of pure niobium pentoxide film, superconducting transition temperature 0.4K.And pure niobium superconducting thin film with a thickness of 5nm
When, superconducting transition temperature 5.9K.Therefore the slight change of pure niobium superconducting thin film thickness influences superconducting transition temperature huge, such as
This thin superconducting thin film uniformity also it is difficult to ensure that.The niobium silicon thin film that the present embodiment uses includes niobium and silicon ingredient, passes through adjusting
Superconducting thin film layer at the niobium available superconducting transition temperature of ratio shared in niobium silicon thin film between 3.85K to 7.1K.
And the thickness of the niobium silicon thin film can be 20nm to 70nm, uniformity is easily guaranteed that in this thickness range preparation process.
There are two the direct current induction type superconduction edge finders of Josephson's bridge knot in application, surpassing to the closed form for band
The binode superconducting ring for leading film layer 500 and the formation of described two Josephson's bridge knots is passed through DC bias current, works as bias current
Greater than the binode superconducting ring maximum critical current when, voltage, and this voltage are generated to binode superconducting ring both ends
Periodically variation is presented with the magnetic flux that the binode superconducting ring is incuded in numerical value.Therefore the absorbed layer 200 and medium
Layer 300 makes the magnetic flux in the binode superconducting ring change after absorbing photon, this variation can pass through the period of voltage value
Property reacting condition comes out.
Fig. 3 is referred to, the present invention also provides a kind of 10 production methods of induction type superconduction edge finder, comprising:
S100 provides a substrate 100, and absorbed layer 200 is grown on the substrate 100, and the absorbed layer 200 is that niobium silicon is thin
Film or pure niobium pentoxide film.
The material that the substrate 100 uses can be silicon, magnesium silicide, magnesia etc..It grows and absorbs on the substrate 100
Layer 200.The magnetron sputtering mode can splash for d.c. sputtering, exchange sputtering, rf magnetron sputtering, reactive sputtering, ion beam
It penetrates.The absorbed layer may be other superconductors, such as pure niobium, niobium nitride.Preferably, the absorbed layer 200 is grown
On a surface of the substrate 100, and flushed with the surface.
S200, in the 200 surface metallization medium layer 300 of absorbed layer, 300 pairs of incident single photons of the dielectric layer have
Anti-reflection effect.
The dielectric layer 300 can be silica, silicon nitride or its structure with special designing etc..The table
Face deposition can be physical vapour deposition (PVD).Preferably, the dielectric layer 300 is deposited on the absorbed layer 200 and the substrate 100
On the correspondence surface of contact surface, and surface corresponding with this flushes.
S300 forms patterned first photoresist layer 110 on 300 surface of dielectric layer, covers the first predeterminable area
Absorbed layer 200.
Photoresist is photosensitive organic compound.It is insoluble to developer solution before exposure, it is solvable after exposure, passed through with this
Exposure protects specific region.Preferably, first photoresist layer 110 covers the dielectric layer 300 and the absorption
On the correspondence surface of 200 contact surface of layer, and cover center portion region on the correspondence surface.
S400 carries out first time etching, etches away the absorbed layer 200 and dielectric layer 300 outside first predeterminable area, cruelly
Expose the substrate 100.
The etching can may be wet etching for dry etching.The preferably described etching be dry etching it is equal from
Daughter etching.
In one embodiment, first time etching is carried out using fluorine-based plasma, etches away first preset areas
Overseas absorbed layer 200 and dielectric layer 300, exposes the substrate 100.
Plasma for etching is generally gaseous state.Fluorine-based plasma can be fluorocarbon plasma.?
In etching process, oxygen gas plasma, nitrogen gas plasma etc. can also be used according to purpose is different with effect.Preferably, most
The structure after etching is 100 face center of substrate by the absorbed layer 200, dielectric layer 300 and first photoresist eventually
Layer 110 covers, and 100 face center of the substrate is by the absorbed layer 200, dielectric layer 300 and first photoresist layer
110 flush.
S500, removes remaining first photoresist layer, and deposition forms insulating layer 400, covers the absorbed layer 200 and medium
Layer 300.
In one embodiment, the structure after first time etching is subjected to processing of removing photoresist using cleaning agent.
In one embodiment, the body structure surface after described remove photoresist, it is former using atomic layer deposition (ALD) technology deposition one
The insulating layer of sub- thickness.
Atomic layer deposition be it is a kind of can the side for being plated in substrate surface by substance in the form of monatomic film in layer
Method.Atomic layer deposition and common chemical deposition have similarity.But in atomic layer deposition process, the change of new one layer of atomic film
Learning reaction is that directly preceding layer is associated therewith, and this mode makes each reaction only deposit one layer of atom.Using atomic layer deposition
Product (ALD) technology deposit an insulating layer with a thickness of 5-10nm.Preferably, the insulating layer 400 covers the substrate 100 and institute
It states the surface-exposed region of the contact of absorbed layer 200 and the surface of the absorbed layer 200 and the dielectric layer is coated entirely.Use atom
The insulating layer 400 of layer deposition (ALD) production, can be silica, is also possible to hafnium oxide.Insulating layer 400 ensure that absorbed layer
It insulate between 200 and superconducting thin film layer 500, so that the surface area of the absorbed layer 200 is reached maximum, i.e., the described absorbed layer
200 outer diameter has helped to improve the detection effect of induction type superconduction edge finder close to 500 internal diameter of superconducting thin film layer
Rate.
S600 grows a superconducting thin film layer 500 on 400 surface of insulating layer, and the superconducting thin film layer is niobium pentoxide film.
The magnetron sputtering mode can be d.c. sputtering, exchange sputtering, rf magnetron sputtering, reactive sputtering, ion beam
Sputtering etc..The superconducting thin film layer can be other superconductors, such as pure niobium, niobium nitride.Preferably, the superconducting thin film layer
500 are grown in 400 surface of insulating layer, and flush with the side on 400 surface of insulating layer.
S700 forms patterned second photoresist layer 120 on the superconducting thin film layer 500, and it is pre- to cover described second
If region, second predeterminable area is to be arranged in 300 peripheral closure shape continuum of the absorbed layer 200 and dielectric layer.
S800 carries out second and etches, etches away the superconducting thin film layer 500 outside second predeterminable area, be closed
Cyclic annular superconducting structure is continued circling on the substrate surface in the periphery of the absorbed layer, dielectric layer and partial insulative layer.
In one embodiment, in the step of etching, etch second preset structure for second of the progress, institute
The time required to the time for carrying out second of etching is stated greater than predetermined etching niobium pentoxide film.
The time for carrying out second of etching actually should be than making a reservation for grow the predetermined time the time required to etching niobium pentoxide film.Niobium pentoxide film
Etch rate be about 10 times of etch rate of dielectric layer 300.If etch period is more than that predetermined etching niobium pentoxide film is taken
Between, the dielectric layer on absorbed layer being first exposed will be thinned, and the etching depth of dielectric layer does not interfere with light transmission
Performance, and absorbed layer below will not be etched.Preferably, specific structure is formed after second etches are as follows: described
Absorbed layer 200 is located at the center on 100 surface of substrate, and the superconducting thin film layer 500 is closed form, can also be with for annular
For closing structures such as rectangles, it is surrounded on 200 periphery of absorbed layer.And the superconducting thin film layer 500 and the substrate it
Between, insulating layer 400 is equipped between the superconducting thin film layer 500 and the absorbed layer 200 and dielectric layer 300.
Due to needing anti-reflection film on the absorbed layer 200, these materials etch rate in the technique of etching niobium is very low,
After making absorbed layer 200, then dielectric layer 300 is made, last redeposition superconducting thin film layer 500, insulating layer 400, which is equivalent to, to be absorbed
Etching barrier layer is added between layer 200 and superconducting thin film layer 500.After etching preset structure, will not to absorbed layer 200 after
Continuous etching, ensure that the stability and repeatability of device performance.Insulating layer 400 is for absorbed layer and superconducting thin film layer 500
Superconduction connection cannot be formed.
S900, on the closed hoop superconducting structure, Josephson's bridge knot 600 is produced in exposure.
In one of the embodiments, on the cyclic annular superconducting structure, directly produced using focused ion beam (FIB)
Josephson's bridge knot 600；Or figure is made using electron beam exposure (EBL), Joseph is then produced using dry etching
Gloomy bridge knot 600.
Specifically, on the cyclic annular superconducting structure, two Josephson's bridge knots are produced using focused ion beam (FIB)
600.Focused ion beam is a kind of micro Process means of precision, there is very high machining accuracy, and tens be most carefully capable of processing out receive
The lines of rice.This is primarily due to be significantly larger than electronics in the energy transfer efficiency of solid material intermediate ion.Common electron beam
Exposure resist will compare high 100 times of electron beam or more to the sensitivity of ion.Other than precision height, ion beam exposure it is another
One advantage is almost without kindred effect.Since the quality of ion itself is much larger than electronics, the scattering model of ion in the resist
Electronics to be much smaller than is enclosed, and almost without back scattering effect.
In one embodiment, step S800 before cleans the second imprinting glue after completing step S700, so that system
Without photoresist when FIB ion beam directly bombards sample surfaces unwanted part during work, preset structure is directly formed.
The pollution of photoresist is reduced, preparation quality is improved.
The preparation method of the niobium silicon thin film includes: in one of the embodiments,
Magnetic control co-sputtering room is provided and is arranged in the indoor niobium target of the magnetic control co-sputtering and silicon target；
Vacuum degree and the niobium target and the silicon target of the magnetron sputtering chamber are controlled with predetermined sputtering pressure, predetermined sputtering
Power carries out the predetermined sputtering time of magnetron sputtering, is the absorbed layer or the superconducting thin film in the substrate surface deposition formation
Layer,
Wherein, proportion is more than or equal to 81.5% and less than or equal to 97.1% niobium in the absorbent layer, causes described
The superconducting transition temperature of absorbed layer is between 3.85K to 7.1K.
It include two kinds of superconducting transition temperatures different niobium film or niobium silicon fiml in the edge finder of induction type superconduction at present.One
Kind is applied to superconducting thin film layer, usual its superconducting transition temperature (Tc) it is about 9K.The absorption that another kind is applied to absorbed layer is thin
Film is made of thinner niobium film or niobium silicon fiml.Both films, which are deposited respectively, etch or removed, forms structure.Superconducting thin film
Layer uses pure niobium pentoxide film and absorbed layer is convenient for forming the absorbed layer sense different with superconducting thin film layer transition temperature using niobium silicon thin film
Answer formula superconduction edge finder.
Traditionally, the production feasible method of induction type superconduction edge finder is first to be formed using the method for deposition, etching
Superconducting thin film layer structure, then using removing method, formed absorbed layer.The method of removing needs first to be formed with photoresist
Figure is then placed in sputtering chamber, deposits superconducting thin film layer, and then removing forms absorbing structure.Although the method for removing can
Row, but the sputtering equipment of usually deposition superconducting thin film layer requires high vacuum degree, band photoresist enters equipment, will affect
The quality of deposition film.
This production method design of the invention rationally, has carried out processing of removing photoresist, when so that doing magnetron sputtering in the production process
Photoresist is no longer adulterated, the deposition quality of superconducting thin film layer is improved.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of induction type superconduction edge finder characterized by comprising
Substrate；
A surface of the substrate is arranged in absorbed layer；
Dielectric layer, is arranged in surface of the absorbed layer far from the substrate, and the dielectric layer has anti-reflection property；
Insulating layer covers the absorbed layer and dielectric layer setting；
Surface of the insulating layer far from the substrate is arranged in superconducting thin film layer, and with continuous closing structure around the absorption
Layer and dielectric layer setting；
Josephson's bridge knot is arranged on the superconducting thin film layer.
2. induction type superconduction edge finder according to claim 1, which is characterized in that
The absorbed layer is niobium silicon thin film or pure niobium pentoxide film, and the superconducting thin film layer is pure niobium pentoxide film.
3. induction type superconduction edge finder according to claim 2, which is characterized in that described in the niobium silicon thin film
Niobium proportion in the niobium silicon thin film is more than or equal to 81.5% and is less than or equal to 97.1%, the superconduction turn of the niobium silicon thin film
Temperature is between 3.85K to 7.1K.
4. induction type superconduction edge finder according to claim 3, which is characterized in that the absorbed layer and the superconduction
The superconducting transition temperature of film layer is different.
5. a kind of induction type superconduction edge finder production method, which is characterized in that the production method includes:
One substrate is provided, grows absorbed layer over the substrate, the absorbed layer is niobium silicon thin film or pure niobium pentoxide film；
In the absorption layer surface metallization medium layer, the dielectric layer has anti-reflection effect to incident single photon；
Patterned first photoresist layer is formed in the dielectric layer surface, covers the absorbed layer of the first predeterminable area；
First time etching is carried out, the absorbed layer and dielectric layer outside first predeterminable area is etched away, exposes the substrate；
Photoresist is removed, deposition forms insulating layer, covers the outer surface of the substrate and the absorbed layer and dielectric layer；
In the surface of insulating layer growth of superconductive film layer, the superconducting thin film layer is pure niobium pentoxide film；
On the superconducting thin film layer, patterned second photoresist layer of formation, covering second predeterminable area, described second
Predeterminable area is the annular continuum of the absorbed layer and dielectric layer periphery；
It carries out second to etch, etches away the superconducting thin film layer outside second predeterminable area, obtain closed hoop superconducting structure
It is continued circling on the substrate surface in the periphery of the absorbed layer, dielectric layer and partial insulative layer；
On the closed hoop superconducting structure, Josephson's bridge knot is produced in exposure.
6. induction type superconduction edge finder production method according to claim 5, which is characterized in that described to carry out first
The step of secondary etching etches away absorbed layer and dielectric layer outside first predeterminable area, exposes the substrate include:
First time etching is carried out using fluorine-based plasma, the absorbed layer outside first predeterminable area is etched away, exposes
The substrate.
7. induction type superconduction edge finder production method according to claim 5, which is characterized in that the removal photoetching
The step of glue, deposition forms insulating layer, covers the outer surface of the substrate and the absorbed layer and dielectric layer includes:
Structure after first time etching is subjected to processing of removing photoresist using cleaning agent；
Body structure surface after described remove photoresist, using the insulating layer of atomic layer deposition (ALD) technology deposition one 5-10nm thickness.
8. induction type superconduction edge finder production method according to claim 5, which is characterized in that carry out the described
It is secondarily etched, the superconducting thin film layer outside second predeterminable area is etched away, lining described in the closed hoop superconducting structure is obtained
Continued circling is described to carry out second in the step of the periphery of the absorbed layer, dielectric layer and partial insulative layer on bottom surface
The time required to the time of etching is greater than the predetermined pure niobium pentoxide film of etching.
9. induction type superconduction edge finder production method according to claim 5, which is characterized in that described to be closed described
On cyclization shape superconducting structure, exposing the step of producing Josephson's bridge knot includes:
On the cyclic annular superconducting structure, Josephson's bridge knot is directly produced using focused ion beam (FIB) or using electricity
Then beamlet exposure (EBL) production figure uses dry etching to produce Josephson's bridge knot.
10. induction type superconduction edge finder production method according to claim 5, which is characterized in that the niobium silicon is thin
The preparation method of film includes:
Magnetic control co-sputtering room is provided and is arranged in the indoor niobium target of the magnetic control co-sputtering and silicon target；
The vacuum degree and the niobium target and the silicon target for controlling the magnetron sputtering chamber are with predetermined sputtering pressure, predetermined sputtering power
Carry out the predetermined sputtering time of magnetron sputtering, the substrate surface deposition formation be the absorbed layer or the superconducting thin film layer,
Wherein, proportion is more than or equal to 81.5% and less than or equal to 97.1% niobium in the absorbent layer, the absorbed layer
Superconducting transition temperature is between 3.85K to 7.1K.
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| CN111261769A (en) * | 2020-01-19 | 2020-06-09 | 中国计量科学研究院 | Optical resonant cavity of superconducting optical detector |
| CN111850555A (en) * | 2020-06-05 | 2020-10-30 | 中国计量科学研究院 | Method for preparing high-coupling-efficiency induction type superconducting edge detector and structure |
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| CN104630709A (en) * | 2015-03-17 | 2015-05-20 | 南京大学 | Method for preparing niobium-silicon film by utilizing magnetron co-sputtering method |
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| CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
| CN104630709A (en) * | 2015-03-17 | 2015-05-20 | 南京大学 | Method for preparing niobium-silicon film by utilizing magnetron co-sputtering method |
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