CN109280962A - A kind of VGF single crystal growing furnace, heating means and storage medium - Google Patents
A kind of VGF single crystal growing furnace, heating means and storage medium Download PDFInfo
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- CN109280962A CN109280962A CN201811329041.XA CN201811329041A CN109280962A CN 109280962 A CN109280962 A CN 109280962A CN 201811329041 A CN201811329041 A CN 201811329041A CN 109280962 A CN109280962 A CN 109280962A
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- furnace
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- crystal growing
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/08—Thermal analysis or thermal optimisation
Abstract
The invention discloses a kind of VGF single crystal growing furnace, heating means and computer readable storage medium, the present invention reconciles interface temperature by the removable heating ring of setting, by the removable heating ring, carries out accurate temperature control to the solid liquid interface of crystal to realize.
Description
Technical field
The present invention relates to field of computer technology, more particularly to a kind of VGF single crystal growing furnace, heating means and computer-readable
Storage medium.
Background technique
Solid-liquid interface shape is affected to crystal quality in crystal growing process, and Raised key axis can play defect is outside
The effect of discharge, while reducing the probability of heterogeneous nucleation, obtained crystal monocrystalline rate and quality is higher, and planar interface nearby answer by heat
Power is smaller, can reduce stress value in crystal growing process, and recessed interface is easy to cause to be mingled in crystal growing process or miscellaneous
Brilliant appearance, while the probability of occurrence of twin line is also higher, therefore, numerous researchers pursue flat solid-liquid in crystal growing process
Interface or convex solid liquid interface.II-VI race's semiconductor (cadmium-zinc-teiluride) compares Si, GaAs, and material thermal conductivity is lower, while liquid phase
Thermal conductivity is higher than the thermal conductivity of solid phase material, and using VB method and VGF method in crystal growing process, Interface Control is relatively more tired
It is difficult.
Carried out in closed container in crystal growing process, it is general using smoked carbon quartz ampoule or using pBN crucible+
Quartz ampoule carries out crystal growth.The thermal conductivity of quartz and pBN crucible is higher than the thermal conductivity of Cdl-x_Znx_Te, in crystal growth
To in the process, the position of solid-liquid interface heat is conducted to crucible, and solid liquid interface is accelerated close to bushing position rate of crystalline growth, entirely
Recessed interface is presented in interface.Therefore it needs that thermal field is adjusted in crystal growing process, controls direction of heat flow, make it along solid
Liquid interface top is incoming, while spreading out of along solid liquid interface lower part, and holding interface shape is Raised key axis.
The heater that the method that solid-liquid interface shape is adjusted is proximate to the position of solid-liquid interface increases power output, to solid-liquid circle
Face carries out the effect that supplement is finally reached optimization interface shape close to the hot-fluid of bushing position.Conventional use of VB and VGF monocrystalline
Stove heating device negligible amounts (4~8), single heater length is longer, and solid-liquid interface shape is adjusted to Raised key axis and needs accordingly
Heater alternating temperature amplitude is larger, and the excessive crystal quality that will lead to of crystal growing process temperature change declines, therefore limits and set
The standby amplitude of accommodation is influenced, two when solid liquid interface is located between two heaters due to the construction of heater itself
A heater cohesive position thermal field adjusts difficulty, and solid-liquid interface shape is that recessed interface can not change.
Summary of the invention
The present invention provides a kind of VGF single crystal growing furnace, heating means and computer readable storage mediums, to solve the prior art
In the problem difficult to the control of the solid-liquid interface shape of crystal.
On the one hand, the present invention provides a kind of VGF single crystal growing furnaces, and the interior VGF single crystal growing furnace includes removable heating ring；It is described
Removable heating ring further comprises that ceramic ring and heating furnace silk two parts are constituted；
The heating furnace silk is cyclic annular heater strip, and the heating furnace silk is integrally embedded in fluted ceramic ring
On, heater strip is placed with ceramic block among both ends, and the heating furnace silk is separated；
The ceramic ring section is C-shaped, and heater strip is wrapped in it by the ceramic ring, the section C-shaped of the ceramic ring
Structural ceramics lower end extension elongation is greater than furnace silk internal diameter, to stop the square radiation axially downward of furnace silk, makes its spoke to ampoule
It is radial and axially upward within the scope of two for penetrating direction；
The diametrically opposite two sides of the ceramic ring are connect with two hollow support ceramic bars, and heating furnace silk both ends are drawn
High temperature wire passes through the ceramic bar and extends on the outside of furnace body and is connected with DC Module out；
The ceramic ring is equipped with high temperature resistant S type thermocouple, and thermocouple wire is passed through and controlled outside the ceramic bar to furnace body with temperature
Device is connected.
Preferably, the heating furnace silk is high temperature resistant cylindrical heater silk.
Preferably, the ceramic block and heating furnace silk end are equipped with scheduled gap.
Preferably, the ceramic bar passes through two water-cooling rings after passing through upper of furnace body insulation plug, and passes through each self-conductance respectively
It after running wheel, is linked together by synchronous locating device, so that the ceramic bar of two sides moves up and down displacement synchronous progress.
Preferably, the positioning device is connected on screw slider, is connected by shaft coupling with step motor below lead screw,
Upper part sliding block, which is realized, after lead screw rotation axially moves up and down, and controls pottery by control step motor rotation speed and time
Porcelain bar and heating ring move up and down.
On the other hand, the present invention provides a kind of VGF single crystal growing furnace heating means, and this method is using described in any of the above-described kind
VGF single crystal growing furnace, comprising:
Long crystal to be generated is placed in the ceramics support of furnace interior, the crystal growth of each warm area of VGF single crystal growing furnace is set
Temperature programming, and the heating schedule for setting removable heating ring assists carrying out Interface Control with mobile process；
Heating ring lower ceramic piece bottom is moved described in crystal growing process to remain and solid liquid interface center
In parallel, when solid-liquid interface shape is Raised key axis, output power reduces, and when solid liquid interface change is recessed, heats the output work of ring
Rate increases, to crystal on the outside of hot-fluid is supplemented at crucible so that interface shape flattens or becomes convex.
In another aspect, the present invention also provides a kind of computer readable storage medium, the computer readable storage medium
It is stored with the computer program of signal mapping, when the computer program is executed by least one processor, to realize among the above
VGF single crystal growing furnace heating means described in any one.
The present invention has the beneficial effect that:
The present invention is by the removable heating round trip sequence of setting, by the removable heating ring adjustment interface temperature, thus real
Now the solid-liquid interface shape of crystal is controlled and adjusted.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, the followings are specific embodiments of the present invention.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
Fig. 1 a is the schematic cross-section of the removable heating ring of the embodiment of the present invention；
Fig. 1 b is the overall structure diagram of the removable heating ring of the embodiment of the present invention；
Fig. 2 is that the embodiment of the present invention synchronizes fixed device and water cooling plant structural schematic diagram；
Fig. 3 is the body water-cooling structure and drive mechanism schematic diagram of the embodiment of the present invention；
Fig. 4 is that the removable heating ring oven intracorporeal site of the embodiment of the present invention sets schematic diagram；
Fig. 5 a is that conventional VGF furnace solid-liquid interface shape is intended to；
Fig. 5 b is the VGF furnace solid-liquid interface shape schematic diagram of the embodiment of the present invention；
Fig. 6 a is conventional VGF furnace quartz crystal State of Thermal Liquid Based schematic diagram；
Fig. 6 b is the auxiliary heating VGF furnace crystal State of Thermal Liquid Based schematic diagram of the embodiment of the present invention；
Fig. 6 c is conventional VGF furnace solid liquid interface partial enlarged view schematic diagram；
Fig. 6 d is the auxiliary heating VGF furnace solid liquid interface partial enlargement diagram of the embodiment of the present invention；
Fig. 7 a is conventional VGF furnace quartz crystal thermal field schematic diagram；
Fig. 7 b is auxiliary heating VGF furnace crystal thermal field schematic diagram of the embodiment of the present invention；
Fig. 7 c embodiment of the present invention auxiliary heating VGF furnace crystals hot-fluid.
Specific embodiment
Exemplary embodiments of the present disclosure are described in more detail below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
It is fully disclosed to those skilled in the art.
First embodiment of the invention provides a kind of VGF single crystal growing furnace, referring to Fig. 1 a and Fig. 1 b, comprising: the VGF single crystal growing furnace
Interior includes removable heating ring；
The removable heating ring further comprises that ceramic ring 2 and 1 two parts of heating furnace silk are constituted；
The heating furnace silk 1 is cyclic annular heater strip, and the heating furnace silk 1 is whole to be embedded in fluted ceramic ring
On 2, it is placed with ceramic block 3 among heater strip both ends, the heating furnace silk 1 is separated；
2 section of ceramic ring is C-shaped, and heater strip is wrapped in it by the ceramic ring 2, the section C of the ceramic ring 2
Shape structural ceramics lower end extension elongation is greater than furnace silk internal diameter, to stop the square radiation axially downward of furnace silk, makes it to ampoule
Radiation direction is for radial direction and axially upward within the scope of two；
The diametrically opposite two sides of the ceramic ring 2 are connect with two hollow support ceramic bars, 1 both ends of heating furnace silk
It draws high temperature wire and passes through the ceramic bar and extend on the outside of furnace body and be connected with DC Module；
The ceramic ring 2 is equipped with high temperature resistant S type thermocouple, and thermocouple wire is passed through and controlled outside the ceramic bar to furnace body with temperature
Device is connected.
The embodiment of the present invention by the removable heating ring of setting, by temperature near the removable heating ring adjustment interface or
Person's adjustment interface shape carries out accurate temperature control to the solid liquid interface of crystal to realize.
It should be noted that heating furnace silk 1 described in the embodiment of the present invention is high temperature resistant cylindrical heater silk 1.
Also, the present invention is equipped with scheduled gap with 1 end of heating furnace silk in the ceramic block 3.
As shown in Figures 2 and 3, the ceramic bar of the embodiment of the present invention passes through two water coolings after passing through upper of furnace body insulation plug
Ring, and respectively by being linked together by synchronous locating device, so that above and below the ceramic bar of two sides after respective propelling sheave
Moving displacement is synchronous to carry out；The positioning device is connected on screw slider, passes through shaft coupling and step motor phase below lead screw
Even, the realization of upper part sliding block is axial after lead screw rotation moves up and down, and is controlled by control step motor rotation speed and time
Ceramic bar processed and heating ring move up and down.
Fig. 4 is the overall schematic of removable the heating ring and transmission mechanism of the embodiment of the present invention, as shown in figure 4, this hair
The removable heating ring of bright embodiment can be moved up and down along ceramic bar.
VGF single crystal growing furnace in the embodiment of the present invention in use, can be by interface shape by each warm area temperature adjustment
It is adjusted to Raised key axis, but after interface location is located between two heating unit heats silks, interface upper end warm area temperature is increased
It is poor to improve situation compared with interface shape after temperature, after interface is located between two heating units, melt internal heat to quartz,
The heat of pBN crucible outflow is more, and will lead to central part heat after heating unit temperature raising in interface upper end is excessively high can not
Outflow outward, leading to interface shape is M shape, and the growth of this interface shape will lead to the decline of crystal structure quality straight line, therefore conventional
Method is the spacing shortened between heating unit, be can compensate for so that interface upper end exports less heat just along quartz, pBN
Interface shape is directly adjusted to planar interface or convex interface by the heat that sidewall of crucible is taken away.With the increasing of crystal growth size
Add, the heat that the heat and crystallization process of melt central part generate, which can not axially conduct, will lead to center
Interface temperature is excessively high, directly results in central part crystallographic refuse.Interface shape is presented as recessed interface in central part.
The size for shortening heating unit simultaneously can increase control terminal burden when interface location is constant.Exploring crystal growing process simultaneously
In thermal field coupling can be generated between adjacent two heating unit, after there is error between theoretical calculation and practical control, crystal growth
Process explorative experiment quantity needs to increase, and equipment research and development cost can be also correspondingly improved.
Second embodiment of the invention provides a specific Application Example, real below in conjunction with Fig. 1-7 couples of present invention
It applies VGF monocrystalline heating furnace described in example and carries out detailed explanation and illustration:
The present invention increases removable heating ring on the basis of VGF single crystal growing furnace, can be in furnace structure and growth curve
The position of solid-liquid interface hot-fluid is compensated in the case where constant, achievees the purpose that interface shape controls；
It is mainly that ceramics and heating furnace silk two parts are constituted that the embodiment of the present invention, which heats loop section,.Heater strip uses high temperature resistant
Cylindrical heater silk is bent to ring-type, and heater strip is integrally embedded in on fluted ceramic ring, and heater strip both ends are close
It is placed with ceramic block among position to separate, is shorted after preventing furnace silk high temperature deformation.There are gaps for ceramic block and heater strip end, make
For the use of furnace silk high-temperature expansion space.Potsherd cross sectional shape is C-shaped, and ceramic ring wraps up heater strip wherein, section C-shaped knot
Structure ceramic lower end extension elongation be greater than furnace silk internal diameter, main purpose be stop furnace silk axially downward side radiation, guarantee its to
The radiation direction of ampoule is for radial direction and axially upward within the scope of two.
There are two hollow support ceramic bars to connect for ceramic ring two sides, and heater strip both ends draw high temperature wire and pass through ceramic tube one
It directly extends on the outside of furnace body and is connected with DC Module.It can slot in ceramic ring position and be put into high temperature resistant S type thermocouple, thermocouple wire
It is connected outside ceramic support bar to furnace body with temperature controller.
It supports ceramic pole length longer, passes through two water-cooling rings, the main work of water-cooling ring after passing through upper of furnace body insulation plug
With being that upper of furnace body draws ceramic bar and the cooling of internal high temperature conducting wire, high-temperature damage other component is prevented；Two support ceramic bars
Respectively by being linked together after respective propelling sheave by synchronous locating device, guarantee that it moves up and down displacement synchronous progress.It is fixed
Position device is connected on screw slider, is connected by shaft coupling with step motor below lead screw, upper part sliding block after lead screw rotation
Realize axial move up and down.It is controlled by control step motor rotation speed and time and is moved down on ceramic bar and heating ring
It is dynamic.
Crystal growing process:
Long crystal to be generated is placed in the ceramics support of furnace interior, and each warm area of VGF furnace sets crystal growth program liter
Temperature；Heating ring sets heating schedule and mobile process auxiliary carries out Interface Control.Ring lower part is heated in crystal growing process
Potsherd bottom remains and solid liquid interface center parallel, when solid-liquid interface shape is Raised key axis, output power reduction；
When solid liquid interface becomes it is recessed when, the output power for heating ring increases, to crystal on the outside of hot-fluid is supplemented at crucible, so that interface shape is flattened
Or become convex.
Fig. 5 a, 5b are it is found that assist VGF furnace crystal growth stable state to conventional VGF single crystal growing furnace, heating using CGSim software
Simulation temperature field distribution map.Two kinds of basic structures of furnace body are identical, and set temperature is identical, and unique difference is to increase auxiliary heating
Ring.Helping heating structure solid-liquid interface shape is Raised key axis, and solid liquid interface risen, and main cause is heater by ampoule and furnace
Space separates between pipe, and upper portion heater radiation can not be propagated directly phase lower part, right after in addition auxiliary heater is heated
The external heater smaller power answered can make temperature controlling point temperature reach set temperature value, therefore solid liquid interface is mentioned
Height does not use auxiliary heating result interface shape for recessed interface.
Can be seen according to Fig. 6 a, 6b, when not using auxiliary heater, at solid liquid interface hot-fluid radial direction component be to
Outside, when using auxiliary heating, hot-fluid radial direction component is inside.Fig. 6 c, 6d partial enlarged view can see quartz ampoule
Internal hot-fluid is supplemented, so that thermoisopleth of the solid liquid interface close to silica crucible position is convex to melt, auxiliary heater
Play the role of interface shape adjusting.
Such as Fig. 7 a, 7b and 7c it is found that output power by increasing auxiliary heater, the corresponding furnace of appropriate external regulator
After body heater, solid-liquid interface shape is adjustable as planar interface in turn, and the direction of heat flow of crystals has also obtained preferable control
System.In crystal growing process, with the variation of VGF furnace body setting program, solid liquid interface gradually elapses upwards, and assists heating
Device position is adjusted with the position of solid-liquid interface shape, while carrying out output power adjusting, can be by whole process solid-liquid
Interface shape becomes Raised key axis or planar interface；It, can using lesser power since heating ring is closer apart from quartz ampoule
Interface shape is adjusted, corresponding external furnace body heating unit will not generate large change, be not in that external heating is single
The state of first inactivity output.
In conclusion being able to maintain using the auxiliary heating means of this patent in original heating unit size and quantity
In the case of, it can be realized during solid liquid interface elapse upwards only by a removable dynamic auxiliary heating ring is increased, dynamically
Interface shape is adjusted.And then it reduces optimization interface shape heater and needs the control of increased quantity, equipment complicated
The R&D cycle of degree and crystal growth technique.
Third embodiment of the invention provides a kind of VGF single crystal growing furnace heating means, appoints in this method application above-described embodiment
A kind of VGF single crystal growing furnace, comprising:
Long crystal to be generated is placed in the ceramics support of furnace interior, the crystal growth of each warm area of VGF single crystal growing furnace is set
Temperature programming, and the good heating schedule for setting removable heating ring assists carrying out Interface Control with mobile process；
Heating ring lower ceramic piece bottom is moved described in crystal growing process to remain and solid liquid interface center
In parallel, when solid-liquid interface shape is Raised key axis, output power reduces, and when solid liquid interface change is recessed, heats the output work of ring
Rate increases, to crystal on the outside of hot-fluid is supplemented at crucible so that interface shape flattens or becomes convex.
The relevant portion of the embodiment of the present invention can be found in first embodiment and be understood, not be described in detail herein.
Fourth embodiment of the invention provides a kind of offer computer readable storage medium, the computer-readable storage medium
Computer program is stored in matter, the computer program realizes following method and step when being executed by processor:
Long crystal to be generated is placed in the ceramics support of furnace interior, the crystal growth of each warm area of VGF single crystal growing furnace is set
Temperature programming, and the good heating schedule for setting removable heating ring assists carrying out Interface Control with mobile process；
Heating ring lower ceramic piece bottom is moved described in crystal growing process to remain and solid liquid interface center
In parallel, when solid-liquid interface shape is Raised key axis, output power reduces, and when solid liquid interface change is recessed, heats the output work of ring
Rate increases, to crystal on the outside of hot-fluid is supplemented at crucible so that interface shape flattens or becomes convex.
The relevant portion of the embodiment of the present invention can be found in embodiment of the method and be understood, not be described in detail herein.
Algorithm and display are not inherently related to any particular computer, virtual system, or other device provided herein.
Various general-purpose systems can also be used together with teachings based herein.As described above, it constructs required by this kind of system
Structure be obvious.In addition, the present invention is also not directed to any particular programming language.It should be understood that can use various
Programming language realizes summary of the invention described herein, and the description done above to language-specific is to disclose this hair
Bright preferred forms.
In the instructions provided here, numerous specific details are set forth.It is to be appreciated, however, that implementation of the invention
Example can be practiced without these specific details.In some instances, well known method, structure is not been shown in detail
And technology, so as not to obscure the understanding of this specification.
Claims (7)
1. a kind of VGF single crystal growing furnace, which is characterized in that include removable heating ring in the VGF single crystal growing furnace；
The removable heating ring further comprises that ceramic ring and heating furnace silk two parts are constituted；
The heating furnace silk is cyclic annular heater strip, and the heating furnace silk is integrally embedded in on fluted ceramic ring, adds
Heated filament is placed with ceramic block among both ends, and the heating furnace silk is separated；
The ceramic ring section is C-shaped, and heater strip is wrapped in it by the ceramic ring, the section C-shaped configuration of the ceramic ring
Ceramic lower end extension elongation is greater than furnace silk internal diameter, to stop the square radiation axially downward of furnace silk, makes it to the radiation side of ampoule
To being radial and axially upward within the scope of two；
The diametrically opposite two sides of the ceramic ring are connect with two hollow support ceramic bars, and heating furnace silk both ends are drawn high
Warm conducting wire passes through the ceramic bar and extends on the outside of furnace body to be connected with DC Module；
The ceramic ring is equipped with high temperature resistant S type thermocouple, and thermocouple wire passes through the ceramic bar to furnace body outside and temperature controller phase
Even.
2. VGF single crystal growing furnace according to claim 1, which is characterized in that
The heating furnace silk is high temperature resistant cylindrical heater silk.
3. VGF single crystal growing furnace according to claim 1, which is characterized in that
The ceramic block and heating furnace silk end are equipped with scheduled gap.
4. VGF single crystal growing furnace according to claim 1, which is characterized in that
The ceramic bar passes through two water-cooling rings after passing through upper of furnace body insulation plug, and respectively by passing through after respective propelling sheave
Synchronous locating device links together, so that the ceramic bar of two sides moves up and down displacement synchronous progress.
5. VGF single crystal growing furnace according to claim 4, which is characterized in that
The positioning device is connected on screw slider, is connected by shaft coupling with step motor below lead screw, after lead screw rotation
Upper part sliding block, which is realized, axially to be moved up and down, and is controlled ceramic bar by control step motor rotation speed and time and is added
Hot ring moves up and down.
6. a kind of VGF single crystal growing furnace heating means, which is characterized in that apply VGF monocrystalline of any of claims 1-5
Furnace, comprising:
Long crystal to be generated is placed in the ceramics support of furnace interior, the crystal growth program of each warm area of VGF single crystal growing furnace is set
Heating, and set the removable heating schedule for heating ring and carry out Interface Control with mobile process auxiliary；
Described in crystal growing process move heating ring lower ceramic piece bottom remain with solid liquid interface center parallel,
When solid-liquid interface shape is Raised key axis, output power reduces, and when solid liquid interface change is recessed, the output power for heating ring increases
Add, to crystal on the outside of hot-fluid is supplemented at crucible so that interface shape flattens or becomes convex.
7. a kind of computer readable storage medium, which is characterized in that the computer-readable recording medium storage has signal mapping
Computer program, the computer program by least one processor execute when, to realize that VGF as claimed in claim 6 is mono-
Brilliant stove heating method.
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| CN201811329041.XA CN109280962A (en) | 2018-11-09 | 2018-11-09 | A kind of VGF single crystal growing furnace, heating means and storage medium |
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| CN201811329041.XA CN109280962A (en) | 2018-11-09 | 2018-11-09 | A kind of VGF single crystal growing furnace, heating means and storage medium |
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Application publication date: 20190129 |