CN109273553A - 一种AlGaN基p-i-n日盲紫外探测器及制备方法 - Google Patents
一种AlGaN基p-i-n日盲紫外探测器及制备方法 Download PDFInfo
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Abstract
本专利公布了一种AlGaN基p‑i‑n日盲紫外探测器及制备方法，探测器结构包括图形化蓝宝石衬底，缓冲层，n型掺杂层，i型掺杂层，应力释放层，p型层，i型层，结构布置自下至上依次为图形化蓝宝石衬底、缓冲层、n型掺杂层、i型掺杂层、应力释放层、p型层、i型层；制备方法包括：对衬底进行清洗，在衬底表面进行淀积石墨处理，获取缓冲层和n型掺杂层，依次生长i型掺杂层，应力释放层，p型层，i型层。本发明可提供的背入射AlGaN基p‑i‑n日盲紫外探测器优势：(1)应力释放层能够减少结构的位错密度，降低器件出现龟裂的概率；(2)二氧化硅作为钝化层，具有优良的绝缘特性，可以作为有效的电极隔离层，从而提高光电转换效率。
Description
技术领域
本发明涉及紫外探测技术，具体涉及一种AlGaN基p-i-n日盲紫外探测器及制备方法。
背景技术
紫外探测技术在军事、天文、农业、生物检测等领域均有广泛应用，与传统的激光探测技术和红外探测技术相比，紫外探测技术优势更大，应用范围更广，在推动国民经济的发展中起到至关重要的作用。
紫外线的本质是电磁波，其波长范围在10nm至400nm之间，在自然界中，紫外线主要来源于太阳。在太阳光中，波长在240nm至280nm的紫外线经过地球表面时被大气臭氧层强烈吸收而难以到达地球表面，因此波长在240nm至280nm之间的波段被称之为“日盲”波段。
紫外探测技术的核心部件是紫外探测器，紫外探测器性能指标对探测结果的影响至关重要，现有技术通常采用先进的半导体材料作为制备器件。半导体紫外探测器质量轻、能耗低、效率高，具有传统技术所不具备的优势，因此有关半导体紫外探测器一直是紫外探测器研究领域中最受青睐和关注的重点之一。
AlGaN半导体材料属于宽禁带的直接带隙半导体材料，可以通过调节Al组分的大小使其禁带宽度在3.14eV至6.12eV之间连续变化，对应的光谱范围为365nm至200nm。AlGaN的物理化学特性优越、逐渐成熟的材料生长技术和可覆盖日盲紫外区的直接带隙，因此AlGaN半导体材料是制作日盲紫外探测器的理想材料。
发明内容
为提供性能优异，质量可靠的背入射AlGaN基p-i-n日盲紫外探测器，本发明的结构包括图形化蓝宝石衬底，缓冲层，n型掺杂层，i型掺杂层，应力释放层，p型层，i型层，所述图形化蓝宝石衬底布置在器件的最下方，所述缓冲层布置在图形化蓝宝石衬底上方，所述n型掺杂层布置在缓冲层与i型掺杂层之间，所述i型掺杂层布置在n型掺杂层与应力释放层之间，所述应力释放层布置在i型掺杂层与p型层之间，所述p型层布置在应力释放层与i型层之间，所述i型层布置在p型层上方。
进一步的，所述缓冲层的厚度为500nm；
进一步的，所述n型掺杂层的厚度为600nm；
进一步的，所述i型掺杂层的厚度为200nm；
进一步的，所述应力释放层的厚度为10nm；
进一步的，所述p型层的厚度为25nm；
进一步的，所述i型层的厚度为160nm。
所述背入射AlGaN基p-i-n日盲紫外探测器的制备方法如下：首先对图形化蓝宝石衬底进行清洗，依次在去离子水环境中超声清洗10分钟，丙酮环境中超声清洗10分钟，再使用去离子水冲洗，乙醇环境中超声清洗10分钟，最后使用去离子水冲洗，在N2氛围中吹干；在衬底表面进行淀积石墨处理，再置于充满N2氛围的快速热退火炉中在500℃条件下退火3分钟；采用金属有机物化学气相淀积技术在衬底上获取缓冲层和n型掺杂层，依次生长i型掺杂层，应力释放层，p型层，i型层；在p型层侧壁淀积二氧化硅钝化层。
进一步的，所述二氧化硅钝化层的厚度为250nm；
进一步的，所述n型掺杂层的掺杂浓度1×1018cm-3；
进一步的，所述i型掺杂层的掺杂浓度1×1017cm-3；
本发明的有益效果：(1)布置在缓冲层之上的应力释放层能够减少结构的位错密度，降低器件出现龟裂的概率，提高器件的使用性能；(2)在p型层侧壁淀积二氧化硅作为钝化层，二氧化硅具有优良的绝缘特性，可以作为有效的电极隔离层，从而提高光电转换效率。
附图说明
图1是本发明的结构示意图。
图中：1-图形化蓝宝石衬底，2-缓冲层，3-n型层，4-i型掺杂层，5-应力释放层，6-p型层，7-i型有源层。
具体实施方式：
下面结合具体实施例和附图进行详细说明：
如图1所述，本发明所采用一种AlGaN基p-i-n日盲紫外探测器的制备过程如下：
首先对图形化蓝宝石衬底(1)进行清洗，依次在去离子水环境中超声清洗10分钟，丙酮环境中超声清洗10分钟，再使用去离子水冲洗，乙醇环境中超声清洗10分钟，最后使用去离子水冲洗，在N2氛围中吹干；在图形化蓝宝石衬底(1)表面进行淀积石墨处理，再置于充满N2氛围的快速热退火炉中在500℃条件下退火3分钟；在衬底上依次生长缓冲层(2)、n型掺杂层(3)，i型掺杂层(4)，应力释放层(5)，p型层(6)，i型层(7)；在p型层(6)侧壁淀积二氧化硅钝化层。
Claims (3)
1.一种AlGaN基p-i-n日盲紫外探测器，其特征在于：包括图形化蓝宝石衬底(1)，缓冲层(2)，n型掺杂层(3)，i型掺杂层(4)，应力释放层(5)，p型层(6)，i型层(7)，所述图形化蓝宝石衬底(1)布置在器件的最下方，所述缓冲层(2)布置在图形化蓝宝石衬底(1)上方，所述n型掺杂层(3)布置在缓冲层(2)与i型掺杂层(4)之间，所述i型掺杂层(4)布置在n型掺杂层(3)与应力释放层(5)之间，所述应力释放层(5)布置在i型掺杂层(4)与p型层(6)之间，所述p型层(6)布置在应力释放层(5)与i型层(7)之间，所述i型层(7)布置在p型层(6)上方。
2.如权利要求1所述一种AlGaN基p-i-n日盲紫外探测器，其特征在于：所述应力释放层(5)的厚度为10nm。
3.一种AlGaN基p-i-n日盲紫外探测器的制备方法，其特征在于，首先对图形化蓝宝石衬底(1)进行清洗，依次在去离子水环境中超声清洗10分钟，丙酮环境中超声清洗10分钟，再使用去离子水冲洗，乙醇环境中超声清洗10分钟，最后使用去离子水冲洗，在N2氛围中吹干；在图形化蓝宝石衬底(1)表面进行淀积石墨处理，再置于充满N2氛围的快速热退火炉中在500℃条件下退火3分钟；在衬底上依次生长缓冲层(2)、n型掺杂层(3)，i型掺杂层(4)，应力释放层(5)，p型层(6)，i型层(7)；在p型层(6)侧壁淀积二氧化硅钝化层。
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| CN111933741A (zh) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | 基于硅衬底的背入射紫外探测器及其制备方法 |
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| CN105845796A (zh) * | 2016-04-12 | 2016-08-10 | 中国科学院半导体研究所 | 用于AlGaN光电器件的多量子阱结构及制备方法 |
| CN106057988A (zh) * | 2016-06-22 | 2016-10-26 | 华灿光电(苏州）有限公司 | 一种GaN基发光二极管的外延片的制备方法 |
| CN106409965A (zh) * | 2016-11-24 | 2017-02-15 | 聊城大学 | 一种高速饱和单行载流子紫外光电二极管及制备方法 |
| CN108054260A (zh) * | 2017-10-25 | 2018-05-18 | 华灿光电（浙江）有限公司 | 一种发光二极管的外延片及制备方法 |
| CN108231924A (zh) * | 2018-02-28 | 2018-06-29 | 华南理工大学 | 生长在r面蓝宝石衬底上的非极性AlGaN基MSM型紫外探测器及其制备方法 |
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| CN111933741A (zh) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | 基于硅衬底的背入射紫外探测器及其制备方法 |
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